JP2005038949A - Auxiliary apparatus and method of analyzing luminescence of plasma processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for collecting luminescence data of multiple wavelengths by a CCD without communicating (without changing software of a high order apparatus) with the high order apparatus (a specific plasma processing apparatus etc.), performing processing for a designated signal fluctuation ratio with respect to waveform data of a specific wavelength lighted after automatic light quantity adjustment, outputting the processed wavelength data to the high order apparatus (the specific plasma processing apparatus etc.), storing the waveform data after the automatic light quantity adjustment to enable displaying and analyzing the waveform by a simulation operation, and stopping the processing of the high order apparatus (the specific plasma processing apparatus etc.) side if an abnormality occurs. <P>SOLUTION: Automatic light quantity adjustment can be performed by using a CCD for a detecting section and controlling a CCD storing time to enable recognizing start of luminescence. Luminescence data can be automatically collected and stored, waveform processing is performed, and the waveform data after waveform processing can be outputted by taking any hardware signal. If an abnormality occurs, an abnormal signal is added to a hardware interlock of luminescence start, thereby enabling stopping the processing of the high order apparatus (the specific plasma processing apparatus etc.) side. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is a system using a light emission analysis device that spectrally analyzes light emission from plasma or the like, and uses data analysis of light emission intensity levels and signal change rates of multiple wavelengths or specific wavelengths (for example, a specific plasma processing device). Other end point detection etc.) related to control.
[0002]
[Prior art]
In the single wavelength emission analyzer, the signal change rate of a specific wavelength was analyzed while changing the sensitivity of the daylighting section. However, even if the sensitivity was adjusted, the intensity of emitted light decreased due to the ambient environment of the plasma, and so on. If the signal change rate becomes difficult to recognize, the analysis becomes impossible, and the ambient environment of the plasma (for example, a full sweep in the chamber of a specific plasma processing apparatus) must be frequently cleaned. Depending on the use conditions, the frequency is high, and it is difficult to analyze the decrease in emission intensity and improve the frequency of cleaning the surrounding environment of the plasma.
[0003]
[Problem to be Solved by the Invention]
Since communication with a host device (for example, a specific plasma processing apparatus) is not performed, automatic adjustment of light amount and waveform data processing of a specific wavelength to be analyzed after detection of plasma emission during sample (for example, wafer etching) processing There was a problem that processing could not be carried out normally.
Further, when the apparatus is abnormal (CCD overflow or some abnormality when collecting CCD data), there is a problem that processing of the sample (for example, wafer etching) cannot be stopped.
[0004]
An object of the present invention is to provide waveform data capable of recognizing a change in a specific wavelength required for an emission analysis apparatus to a higher-level apparatus (for example, a specific plasma processing apparatus) and to clean the frequency of the surrounding environment of the plasma. It is to reduce.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, a hardware signal corresponding to the start of sample (for example, wafer etching) processing is taken into the emission analysis auxiliary device from the outside, an abnormal signal is output to the outside, and a host device (for example, a specific device) Processing waveform data can be analyzed without changing software on the host device (for example, a specific plasma processing device) by incorporating the sample (for example, wafer etching) processing hard interlock of the plasma processing device, etc. Possible.
[0006]
[Action]
As described above, in the system using the light emission analysis device, it is a function necessary to improve the sample (for example, wafer etching) processing control using the analysis result of the specific wavelength and the reduction of the frequency of cleaning the plasma surrounding environment. The
[0007]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 shows one embodiment of the present emission analysis auxiliary apparatus according to the present invention.
Light emission from the light source 1 (for example, plasma light emission in a wafer processing process of a semiconductor manufacturing apparatus) is increased by the condenser lens 2 in the daylighting unit, and the light emission data is transmitted through the optical fiber 3 as an optical transmission path. The signal is incident on a CCD (Charge Coupled Device) 5 of the detector 4 as a signal.
In the CCD 5, the optical signal is dispersed at different angles for each wavelength. The split light is input to a CCD 5 containing a plurality of light detectors (usually several hundred to several thousand. In the following description, 2048 is assumed for the sake of simplicity). The intensity of the specific wavelength component in the incident light is detected by the detector at the specific position.
In the detector 4, the analog data of the CCD 5 is converted into digital data 6 and transmitted to the emission analysis auxiliary device 7. In the emission analysis auxiliary device 7 (here, a personal computer is assumed as an example), the light level of a specific wavelength incident on the CCD 5 is confirmed based on this data. As a result, a CCD accumulation time command signal 8 is transmitted to the detector 4 to perform automatic light quantity adjustment.
In the emission analysis auxiliary device 7, the multi-wavelength emission data is collected from the detector 4 using the signal 9 that is turned on as an external input, the specific wavelength, the multi-wavelength emission data is stored, and the specific wavelength is processed. The processed waveform data is output from the D / A converter 10 to the host apparatus 12 (for example, a specific plasma processing apparatus or the like) as an analog signal 11. If the light emission intensity level difference of the light source 1 is large and cannot be handled by the automatic light amount adjustment, an abnormal signal 13 is output from the light emission analysis auxiliary device 7 to the host device 12 (for example, a specific plasma processing device) to emit light. The abnormality indicator lamp 15 of the emission analysis auxiliary device 7 is blinked by turning OFF.
[008]
FIG. 2 shows an embodiment of a specific wavelength waveform data processing method according to the present invention.
The raw light waveform data 16 that is the specific wavelength to be analyzed is the waveform data 19 that is automatically adjusted to a predetermined level 18 after the light amount adjustment dead time 17, and then processed by the gain / offset 20. The waveform data 21 is output to the outside.
[0109]
【The invention's effect】
Since the present invention is configured as described above, the following effects can be obtained.
[0010]
In the processing waveform data output of a specific wavelength of the present invention, the light amount of the specific wavelength is stabilized by controlling the CCD accumulation time without changing the software of the target host device (for example, a specific plasma processing apparatus). After performing such automatic light amount adjustment, the waveform data of the specific wavelength is stored, processed, and the processed data is output to a higher-level device (for example, a specific plasma processing device) and the waveform processing data is analyzed by simulation. There is an effect that can be.
[0011]
In addition, there is an effect that multi-wavelength emission data collection and waveform data of a specific wavelength can be processed without being affected by a change in plasma emission itself over time.
[0012]
If you only need to collect emission data, use a laptop computer that is easy to carry and remove, and remove the parts of the daylighting unit to temporarily install it on other target plasma processing equipment. There is an effect that it can be collected.
[0013]
[Brief description of the drawings]
FIG. 1 is an explanatory view of a light emission analysis assisting method and apparatus of a plasma processing apparatus according to the present invention. FIG. 2 is an explanatory view of a processing example of specific wavelength waveform data in the light emission analysis assisting apparatus according to the present invention. ]
1. 1. Light emission source 2. Condensing lens Optical fiber 4. Detector 5. CCD
6). Digital data7. Emission analysis auxiliary device 8. 8. CCD accumulation time command signal 9. Light-on signal D / A converter 11. Analog signal (processing waveform data)
12 Host device 13. Abnormal signal 14. Turn off the light
15. Abnormal indicator light 16. Raw waveform data 17. Light amount adjustment dead time 18. Predetermined level 19. Automatically adjusted waveform data20. Gain / offset 21. Processed waveform data

Claims (13)

In a plasma processing apparatus, a lighting unit, a means for adjusting the amount of light collected, and a sampled emission data set for the purpose of grasping the change of plasma emission and grasping the state of the process, and analyzing the collected emission data (for example, processing) In the light emission analysis device of the plasma processing apparatus, which comprises a determination unit that performs an end point determination, etc., the function of automatically adjusting and storing the amount of light collected at multiple wavelengths or specific wavelengths, and the automatically adjusted specific wavelength emission intensity level and A method for assisting in light emission analysis of a plasma processing apparatus, characterized by having a function of processing a signal change rate to a predetermined value and a function of outputting the processed data to a data analysis and determination unit. The apparatus shown in claim 1, wherein a CCD is used for the daylighting unit. The apparatus according to claim 1 or 2, characterized in that a multi-wavelength and a specific wavelength can be selected at the time of data storage at the time of daylighting. 4. An apparatus according to claim 2 or 3, wherein a specified wavelength of light is emitted so that the CCD does not overflow due to light emission of a specified wavelength for grasping a processing state when a specified time has elapsed after the start of daylighting. A light emission analysis auxiliary device for a plasma processing apparatus having a function of automatically adjusting an irradiation accumulation time of a signal to a CCD. 5. The apparatus according to claim 4, which has a function of outputting an abnormal signal that cannot be analyzed to the outside and displaying an alarm when the specific wavelength or multi-wavelength light collected by the CCD is outside the automatic adjustment range. A light emission analysis auxiliary device for the plasma processing device. In the apparatus according to any one of claims 1, 2, 3, 4, and 5, the amount of collected light decreases due to some influence (for example, dirt in the chamber of the plasma processing apparatus), and a setting value of a parameter for automatically adjusting the amount of light is preset. An emission analysis auxiliary device for a plasma processing apparatus having a function of displaying a warning (for example, a request for sweeping the inside of a chamber of the plasma processing apparatus) when the measured value is exceeded. In the apparatus shown in claim 1, 2, 3, 4, 5, 6, by subjecting the target plasma emission to light transmission means from one daylighting unit, and the light emission signal by one CCD, A light emission analysis auxiliary device for a plasma processing apparatus characterized by enabling processing of waveform data of one specific wavelength or a plurality of different specific wavelengths. 7. The apparatus shown in claim 1, 2, 3, 4, 5, or 6, wherein the target plasma emission is branched from one light collecting unit to a plurality of optical fibers as light transmission paths, or a plurality of light collecting units are provided to each light emission signal. A light emission analysis auxiliary device for a plasma processing apparatus characterized in that a plurality of waveform data of different specific wavelengths can be processed by collecting light with a plurality of CCDs. The apparatus according to any one of claims 1, 2, and 3, wherein the stored multi-wavelength emission data is used, the wavelength is selected by simulation, and the waveform data display and emission intensity level and signal change rate at that time are specified. A plasma analysis apparatus emission analysis auxiliary device characterized in that it can perform data processing by arbitrarily specifying, and has a function of displaying a result and outputting a file of saved emission data. In the apparatus shown in claims 1, 2, 3, 7, 8, and 9, it can be easily carried, not by a fixed installation method in a specific plasma processing apparatus, but by temporary installation in a plurality of apparatuses, Emission analysis assisting device for plasma processing equipment characterized by enabling emission data collection. In the apparatus according to claim 1, when communication (wafer processing information, etc.) with a host apparatus (for example, a specific plasma processing apparatus, etc.) is not required, additional installation in local operation is possible. An emission analysis auxiliary device for a plasma processing apparatus, characterized in that automatic operation is possible by performing communication (wafer processing information or the like) with an apparatus (for example, a specific plasma processing apparatus or the like). 12. The plasma processing according to claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, or 11, to which a function for determining a processing state (for example, processing end point determination or the like) is added. Device emission analysis auxiliary device. In the apparatus shown in Claims 1, 2, 3, 4, and 12, for each wavelength of the collected emission data, the corresponding element component or molecular component is identified and displayed by collating with a data table prepared in advance. A light emission analysis auxiliary device for a plasma processing apparatus characterized by having a function.

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