JP2005033002A - Radiation detector and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a planar X-ray detector in which a circuit board and an X-ray photoconductive film are stably adhered to each other and the X-ray photoconductive film is not deteriorated in characteristics and which is high in X-ray-charge conversion efficiency and can stably form X-ray detecting images, and to provide a method of manufacturing the detector. <P>SOLUTION: This planar X-ray detector has an intermediate layer 10 formed of a metal oxide or metal nitride which has high crystal compatibility to the substance forming the X-ray photoconductive film 2, which converts X-rays made incident from the outside into signal charges, and is less in reactivity between the X-ray photoconductive film 2 and the pixel electrode 5 of the circuit board. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a radiation detector that detects a radiographic image taken with radiation.
[0002]
[Prior art]
As a radiation detector, for example, a planar detector in which a plurality of X-ray detection elements are two-dimensionally arranged is drawing attention. The planar detector can output an X-ray image taken with X-rays or a real-time X-ray image as a digital signal. Since the flat detector is a solid state detector, it is expected to improve image quality performance and stability.
[0003]
Planar detectors for general radiography and chest radiography that collect still images with relatively large doses have already been developed and commercialized.
[0004]
In the near future, X-ray moving images of 30 screens or more per second can be detected using, for example, fluoroscopic doses, and commercialization of products applied to fields such as circulatory organs and digestive organs is also predicted. For detection of such an X-ray moving image, improvement of S / N, development of a real-time processing technique of minute signals, and the like are required.
[0005]
There are two types of planar detectors: a direct method and an indirect method.
[0006]
The direct method is a method in which an X-ray is directly converted into a signal charge using an X-ray photoconductive material such as a-Se, and the converted signal charge is stored in a charge storage capacitor.
[0007]
On the other hand, the indirect method converts X-rays into visible light using a scintillator material, converts the converted visible light into signal charges with an a-Si photodiode or CCD, and converts the signal charges into a charge storage capacitor. This is an accumulation method.
[0008]
In the direct method, a pixel portion, a charge storage portion, a TFT, and a Zener diode are provided for each pixel that is two-dimensionally arranged on the detection surface, and the voltage input to the TFT input side by the Zener diode is a voltage that destroys the TFT. There has already been proposed a detector that prevents destruction of a TFT (readout switch) by outputting a charge to the charge storage section when a predetermined voltage lower than the predetermined voltage is reached (see, for example, Patent Document 1).
[0009]
[Patent Document 1]
Japanese Patent Laid-Open No. 10-10237 (abstract, FIG. 1, paragraphs [0038] to [0048]).
[0010]
[Problems to be solved by the invention]
In the direct type planar detector, the characteristics of the radiation photoconductive layer, that is, the intensity of the output signal with respect to the intensity of the incident radiation (conversion efficiency capable of outputting incident radiation as a signal charge) is important. Therefore, the radiation - for the purpose of improving the signal charge conversion efficiency, the radiation photoconductive layer, for example, PbI 2 _(iodide lead) and HgI 2 _(iodide mercury) or the like of a metal iodide or metal halide-based A photoconductive material is used.
[0011]
However, since halogen elements such as iodine are highly reactive, they react with positive elements in the pixel electrode in contact with the radiation photoconductive layer (for example, metal electrode materials such as Al and In and In and Sn of ITO), Due to the problem that the pixel electrode corrodes and the change in the interface state between the pixel electrode and the radiation photoconductive material, there arises a problem that the dark current characteristics and photoconductive characteristics change.
[0012]
In addition, a material used for the pixel electrode (for example, a metal electrode material such as Al or In or ITO) and a metal iodide or metal halide compound-based photoconductive material (for example, PbI ₂ or HgI ₂ ) has a crystal lattice spacing. Due to the large difference, there is a problem that lattice mismatch occurs at the interface and it is difficult to obtain adhesion strength at the interface.
[0013]
An object of the present invention is to provide an X-ray planar detector that has high radiation-to-charge conversion efficiency and can operate stably.
[0014]
[Means for Solving the Problems]
The present invention provides a circuit board in which a plurality of pixel electrodes and switching elements are provided one-dimensionally or two-dimensionally on a planar substrate, and is brought into contact with the circuit board to convert incident radiation into a charge having a magnitude corresponding to its intensity. A radiation detector comprising a radiation photoconductive layer containing particles of a radiation-to-charge conversion medium to be converted and a bias electrode capable of applying a predetermined bias voltage to the radiation photoconductive layer, wherein the radiation photoconductive layer and the pixel An intermediate layer made of a metal oxide or metal nitride having high crystal matching with the material forming the radiation photoconductive layer and low reactivity between the electrodes and between the bias electrode and the radiation photoconductive layer It is a radiation detector characterized by being provided.
[0015]
The present invention also includes a step of forming a circuit substrate by arranging a plurality of pixel electrodes and switching elements in a one-dimensional or two-dimensional manner on a planar substrate, and electrically radiating radiation incident from the outside onto at least the pixel electrode on the circuit substrate. In a method of manufacturing a radiation detector, comprising: a step of forming a radiation photoconductive layer mainly composed of a metal iodide or metal halide that converts a signal; and a step of forming a bias electrode on the radiation photoconductive layer. A metal oxide or metal having high crystal matching and low reactivity between the radiation photoconductive layer and the pixel electrode and between the bias electrode and the radiation photoconductive layer and the material of the radiation photoconductive layer. A method of manufacturing a radiation detector, further comprising the step of generating an intermediate layer made of nitride.
[0016]
Furthermore, the present invention provides a circuit board in which a plurality of pixel electrodes and switching elements are provided one-dimensionally or two-dimensionally on a planar substrate, and a charge of a magnitude corresponding to the intensity of the incident radiation that is in contact with the circuit board. A radiation photoconductive layer containing particles of a radiation-charge conversion medium to be converted into a bias electrode capable of applying a predetermined bias voltage to the radiation photoconductive layer, and between the radiation photoconductive layer and the pixel electrode, A first intermediate layer formed of a metal oxide or metal nitride having high crystal matching with a substance forming the radiation photoconductive layer and low reactivity; the bias electrode; and the radiation photoconductive layer. A second intermediate layer formed of a metal oxide or a metal nitride having high crystal matching with the substance forming the radiation photoconductive layer and low reactivity, and the radiation photoconductive A partition wall for partitioning the pixel as a unit defined by said first intermediate layer between the pixel electrode and a radiation detector characterized in that it comprises a.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an example of an embodiment of the present invention will be described in detail with reference to the drawings.
[0018]
In the present invention, the present invention can be applied to X-rays, γ-rays, and other various radiations. However, in the following embodiment, a case of representative X-rays in radiation will be described as an example. Therefore, by replacing “X-ray” in the embodiment with “radiation”, the present invention can be applied to other radiation targeted by the present invention.
[0019]
As shown in FIG. 1, a direct X-ray planar detector 101 can generate a signal charge having a magnitude corresponding to the intensity of input radiation (X-rays in this example) on the active matrix substrate 1. And an X-ray photoconductive layer 2 which is an X-ray-signal charge conversion layer. Note that FIG. 1 shows an active matrix substrate 1 in which a plurality of signal charge detection units and signal extraction elements are provided in a matrix of m rows × n columns and an X-ray, as will be described later with reference to FIG. The cross section of the photoconductive layer 2 cut out for two pixels is shown enlarged.
[0020]
As shown in FIG. 1, a bias electrode 3 capable of applying a bias voltage to the X-ray photoconductive layer 2 is provided on the X-ray photoconductive layer 2. A metal oxide or a metal nitride having a high crystal matching with the material used for the X-ray photoconductive layer 2 and a low reactivity between the X-ray photoconductive layer 2 and the bias electrode 3. An intermediate layer 10 made of is provided in a predetermined thickness.
[0021]
The matrix substrate 1 is on a support substrate 4 made of, for example, glass, and divides signal charges generated by the X-ray photoconductive layer 2 into m rows × n columns with the X-ray photoconductive layer 2. The pixel electrode 5 that is taken in independently for each region, the charge storage capacitor 6 that stores the signal charge taken in by the pixel electrode 5, and the signal charge that is stored in the charge storage capacitor 6 is transferred at a predetermined timing. TFT (thin film transistor) 7 as a switching element for this purpose. The m × n unit pixels defined by the charge storage capacitor 6 and the TFT 7 and the X-ray photoconductive layer 2 are insulated by an insulating layer 8 formed of, for example, SiO ₂ (silicon oxide). ing.
[0022]
The individual pixel electrodes 5, the charge storage capacitors 6, and the TFTs 7 are divided by partition walls 9 that divide each pixel. An intermediate layer 10 made of the same material as the intermediate layer 10 provided between the X-ray photoconductive layer 2 and the bias electrode 3 is provided on the side of each pixel electrode 5 in contact with the X-ray photoconductive layer 2. Is provided. The partition wall 9 is formed by partially removing the intermediate layer 10 between the X-ray photoconductive layer 2 and the pixel electrode 5 by physical or chemical etching or dicing. The intermediate layer 10 is formed by a vacuum deposition method or sputtering.
[0023]
Each pixel electrode 5 is connected to the drain electrode 12 of the TFT 7 that is insulated by the insulating layer 8 by, for example, a through hole 11. The drain electrode 12 is connected to a transparent electrode 13 that serves as one electrode of the charge storage capacitor 6.
[0024]
Since the intermediate layer 10 is divided by the partition wall 9 with the pixel electrode 5 and its peripheral region as a unit, the intermediate layer 10 has a region in contact with the pixel electrode 5 (shown as a pixel electrode region) and a peripheral region in contact with the pixel electrode 5 (other than the pixel electrode). In this case, the thickness of the intermediate layer 10 is
Pixel electrode region <region other than the pixel electrode.
[0025]
From this, the resistance value per unit area of the pixel electrode region and the region other than the pixel electrode is
Pixel electrode region <region other than the pixel electrode.
[0026]
In addition, since the substance forming the intermediate layer 10 is a metal oxide or metal nitride, the insulation resistance between the pixel electrode regions (the gap between the pixel electrodes) is
Pixel electrode region <pixel electrode gap.
[0027]
For this reason, the pixel electrode 5 is selectively given conductivity. Further, the intermediate layer 10 in a region other than the pixel electrode 5 also serves as insulation and protection for the active matrix substrate 1.
[0028]
The partition wall 9 that separates the region of the intermediate layer 10 in units of pixel electrodes is highly likely to reduce the influence of adjacent pixels because of the structure, and the partition wall structure that separates the region of the intermediate layer 10 in units of pixel electrodes. Then, since electric field concentration occurs in each pixel electrode portion as compared with the conventional case (in the case of not having a partition structure), it is possible to generate an effect of suppressing a crosstalk caused by the photoconductive charges generated in adjacent pixels wrap around. And the possibility of improving the resolution characteristics is also increased.
[0029]
The material usable for the intermediate layer 10 has a suitable combination with the material used for the X-ray photoconductive layer 2. For example, when the X-ray photoconductive layer 2 is formed of PbI ₂ (lead iodide), the intermediate layer 10 is a metal oxide or metal nitride having a high crystal matching with PbI ₂ and a low reactivity. For example, chromium oxide (Cr ₂ O ₃ ) or the like can be used.
[0030]
Since Cr ₂ O ₃ is a hexagonal crystal having the same crystal structure as PbI ₂ and the crystal lattice spacing is 49.5 nm which can be approximated to the crystal lattice spacing (45.6 nm) of PbI ₂ , the crystal matching is high. Incidentally, _Cr 2 _{O 3,} since it is chemically stable, it is recognized that lower reactivity with PbI _2.
[0031]
Cr ₂ O ₃ has a band gap of about 5 eV, is lower than an insulator in which aluminum oxide (Al ₂ O ₃ ) is about 9 eV, and has a volume resistivity of about 100 kΩcm to 100 MΩcm. For this reason, when the intermediate layer 10 is divided by the partition walls 9, it is considered that the conductivity of the pixel electrode portion can be selectively obtained. That is, even when the intermediate layer 10 has a partition structure that separates the regions in units of pixel electrodes, the material forming the intermediate layer 10 is a metal oxide or a metal nitride. The insulation resistance of
Since the pixel electrode region is a gap between pixel electrodes, there is no influence of wraparound of photoconductive charges generated in adjacent pixels, and the conductivity of the pixel electrode portion can be selectively obtained.
[0032]
For example, the size of the pixel electrodes 5 is 100 μm × 100 μm, the pitch of the pixel electrodes 5 is 125 μm, the distance between the pixel electrodes 5 (gap between the pixel electrodes 5) is 25 μm, and the intermediate layer 10 corresponding to (overlapping) the pixel electrode region. When the thickness of the intermediate layer 10 in the region other than the pixel electrode is 1 μm, the volume resistivity of the intermediate layer 10 is 10 MΩcm, and the relative dielectric constant of the intermediate layer 10 is 12, it corresponds to the pixel electrode region. The resistance value of the intermediate layer 10 is 100 kΩ, the resistance value of the gap between the pixel electrodes 5 is 25 GΩ, and the conductivity of the pixel electrode portion is selectively obtained. That is, as in the description of the partition wall, the insulation resistance between the pixel electrode regions (gap between the pixel electrodes) is
Since the pixel electrode region is a gap between pixel electrodes, there is no influence of wraparound of photoconductive charges generated in adjacent pixels, and the conductivity of the pixel electrode portion can be selectively obtained.
[0033]
Further, since the capacitance component of the intermediate layer 10 having the above-described size and thickness is 106.2 pF, the time constant CR of the intermediate layer 10 corresponding to the pixel electrode region is 10.62 μs.
[0034]
Since this time constant CR is sufficiently small with respect to 33 msec, which is a reading rate in a moving image application of 30 frames per second, it can be used in a moving image application.
[0035]
PbI ₂ , HgI _2, or BiI ₃ that can be used for the X-ray photoconductive film 2 can obtain a good X-ray-photoconductive charge conversion performance in a single crystal state, but its conversion efficiency when the crystal state is poor. Decreases. For this reason, it is preferable to suppress the deviation of the crystal lattice spacing of the material used for the intermediate layer 10 within a predetermined range.
[0036]
As the metal oxide or metal nitride that can be used for the intermediate layer 10, when the material of the metal iodide or metal halide used for the X-ray photoconductive layer 2 is, for example, PbI ₂ , the above-described Cr ₂ In addition to O ₃ (chromium oxide), ^* AlN (aluminum nitride), ^* β-Si ₃ N ₄ (silicon nitride), ^* β-Ge ₃ N ₄ (germanium nitride), or the like can be used. The material with “ ^* ” added is n times the crystal lattice spacing {an integer multiple that does not cause lattice mismatch at the interface (including an integer multiple of √3 when the crystal structure is hexagonal)} It is a material having high crystal matching with the X-ray photoconductive layer 2 material. That is, when Si ₃ N ₄ is used for the intermediate layer 10, the lattice spacing of Si ₃ N ₄ is 77.5 nm, and has a lattice spacing that can be approximated to √3 times the crystal lattice spacing of PbI ₂ .
[0037]
In addition, as a metal oxide or metal nitride usable for the intermediate layer 10, the metal iodide or metal halide compound used for the X-ray photoconductive layer 2 is, for example, HgI ₂ (mercury iodide). CoO (cobalt monoxide), MnO (manganese monoxide), FeO (iron monoxide), Cu ₂ O (dicopper monoxide), or the like can be used.
[0038]
Further, as the metal oxide or metal nitride usable for the intermediate layer 10, the material of metal iodide or metal halide used for the X-ray photoconductive layer 2 is BiI ₃ (bismuth iodide: crystal lattice spacing 75). .1 nm) ^* InN (indium nitride: crystal lattice spacing 35.4 nm, doubled to be a lattice spacing approximate to BiI ₃ crystal lattice spacing) or the above-mentioned Si ₃ N ₄ etc. Is possible. The material to which “ ^* ” is added is an X-ray when n times the crystal lattice spacing {an integer multiple that does not cause lattice mismatch at the interface (including an integer multiple of √3 if the crystal structure is hexagonal)}. This material has high crystal matching with the photoconductive layer 2 material.
[0039]
The X-ray planar detector 101 shown in FIG. 1 is a circuit board in which, for example, a plurality of pixel electrodes 5 and switching elements (TFTs) 7 are arranged one-dimensionally or two-dimensionally on a planar substrate (support substrate) 4. (Matrix substrate) 1 forming step, and X-ray photoconductivity mainly composed of metal iodide or metal halide for converting X-rays incident from the outside onto at least the pixel electrode 5 on the circuit substrate 1 into an electric signal A step of forming the layer 2, a step of forming the bias electrode 3 on the X-ray photoconductive layer, and between the X-ray photoconductive layer 2 and the pixel electrode 5 and between the bias electrode 3 and the X-ray photoconductive layer 2. The intermediate layer 10 made of a metal oxide or metal nitride having a high crystal matching with the material of the X-ray photoconductive layer 2 and having a low reactivity can be easily formed. is there.
[0040]
When incident X-rays R are applied to the bias electrode 3 of the direct X-ray planar detector shown in FIG. 1 while a predetermined bias voltage Vb is applied, the X-ray photoconductive layer 2 generates the incident X-rays. The electric charge 14 is moved to an arbitrary pixel electrode 5 on the active matrix substrate 1 by an electric field directed by the bias voltage Vb applied to the bias electrode 3, and passes through the drain electrode 12 of the TFT 7 to be a charge storage capacitor. 6 is accumulated. The charge 14 is illustrated in FIG. 1 as a state in which electrons e and holes (holes) h are directed to the bias electrode 3 and the pixel electrode 5, respectively.
[0041]
The charges 14 stored in the charge storage capacitor 6 are output to a signal (image) processing unit (not shown) at a predetermined timing by a signal reading unit described below with reference to FIG.
[0042]
FIG. 2 is an equivalent circuit schematically illustrating a signal extraction unit for reading out signal charges from the individual pixels illustrated in FIG.
[0043]
The gate electrodes 15 of the respective TFTs 7 arranged in the form of m × n lattices are individually connected to m control electrodes 16 connected to a scanning line control circuit (not shown). Further, the drain electrode 12 of the TFT 7 is individually connected to n read electrodes 17 connected to a read control circuit (not shown).
[0044]
Therefore, accumulation is performed in the capacitor 6 through the pixel electrode 5 provided in each pixel until an ON signal is input to the gate electrode 15 of an arbitrary row by the control electrode 16 and each TFT is turned on. The charged charges 14 are output to the readout electrode 17 when the TFT 7 is turned on.
[0045]
As described above, according to the present invention, in a direct X-ray planar image detector using a metal iodide or metal halide high-sensitivity photoconductive material for the X-ray photoconductive layer, the corrosion of the pixel electrode is detected. In addition, an X-ray planar detector can be obtained in which there is no characteristic deterioration due to a decrease in adhesion strength at the interface between the X-ray photoconductive layer and the pixel electrode or the X-ray photoconductive layer and the bias electrode layer.
[0046]
Therefore, an X-ray planar detector with high X-ray-charge conversion efficiency and stable operation can be obtained.
[0047]
The present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the scope of the invention when it is implemented. Moreover, each embodiment may be implemented in combination as appropriate as possible, and in that case, the effect of the combination can be obtained.
[0048]
In the above-described embodiment, the X-ray detector in which a plurality of vertical and horizontal pixels are arranged has been described. However, the ratio of the vertical and horizontal pixels is different (for example, when one pixel is one). The present invention is also applicable to an X-ray detector configured in a shape.
[0049]
【The invention's effect】
According to the present invention, the X-ray photoconductive charge conversion characteristic of the X-ray photoconductive film is stabilized, so that an X-ray planar detector having high X-ray-charge conversion efficiency and stable operation can be obtained. It is done. In addition, since the efficiency in which X-rays are converted into electric charges by each pixel is increased, this is a substantial improvement in sensitivity. Therefore, the radiation dose (X-ray dose) that must be applied to the inspection object (specimen) is reduced. In particular, when the specimen is a human body, the amount of exposure can be reduced.
[Brief description of the drawings]
FIG. 1 is a schematic diagram illustrating an example of an X-ray detector to which an embodiment of the present invention can be applied.
FIG. 2 is a schematic diagram for explaining an example of an active matrix substrate in the X-ray detector shown in FIG. 1;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Active matrix substrate, 2 ... X-ray photoconductive layer, 3 ... Bias electrode, 4 ... Support substrate, 5 ... Pixel electrode, 6 ... Charge storage capacitor, 7 ... Thin-film transistor (TFT), 8 ... Insulating layer, 9 ... Partition wall, 10 ... intermediate layer, 11 ... through hole, 12 ... drain electrode, 13 ... transparent electrode, 14 ... charge (photoconductive charge), 15 ... gate electrode, 16 ... control electrode, 17 ... reading electrode, R ... incident X Lines, e ... electrons, h ... holes, 101 ... X-ray planar detectors.

Claims (13)

A circuit board in which a plurality of pixel electrodes and switching elements are provided one-dimensionally or two-dimensionally on a planar substrate, and radiation that is brought into contact with the circuit board and converts incident radiation into charges having a magnitude corresponding to the intensity thereof. In a radiation detector comprising a radiation photoconductive layer containing particles of a charge conversion medium, and a bias electrode capable of applying a predetermined bias voltage to the radiation photoconductive layer,
Metal oxidation between the radiation photoconductive layer and the pixel electrode, and between the bias electrode and the radiation photoconductive layer, having high crystal matching with the material forming the radiation photoconductive layer and having low reactivity A radiation detector characterized in that an intermediate layer made of metal or metal nitride is provided. The radiation detector according to claim 1, further comprising: a partition wall that separates the pixel including the intermediate layer between the radiation photoconductive layer and the pixel electrode as a unit. 2. The intermediate layer is made of a material having a crystal lattice spacing that is substantially equal to or approximateable to the crystal lattice spacing of the radiation photoconductive layer, or approximately equal to or approximateable by √3 or an integral multiple. Or the radiation detector of 2. 4. The intermediate layer according to claim 3, wherein when the radiation photoconductive layer is mainly composed of lead iodide, any one of chromium oxide, aluminum nitride, silicon nitride, and germanium nitride is a main component. The radiation detector described. The intermediate layer has, as a main component, any one of cobalt monoxide, manganese monoxide, iron monoxide, or dicopper monoxide when the radiation photoconductive layer is mainly composed of mercury iodide. The radiation detector according to claim 3. 4. The radiation detector according to claim 3, wherein the intermediate layer is mainly composed of indium nitride or silicon nitride when the radiation photoconductive layer is mainly composed of bismuth iodide. 7. The radiation detector according to claim 2, wherein the partition wall is formed by removing the intermediate layer by physical or chemical etching or by partially removing the intermediate layer by dicing. A process of forming a circuit board by arranging a plurality of pixel electrodes and switching elements in a one-dimensional or two-dimensional manner on a planar substrate, and a metal that converts radiation incident from the outside onto at least the pixel electrode on the circuit board into an electrical signal In a method for manufacturing a radiation detector, comprising: a step of forming a radiation photoconductive layer mainly composed of an iodide or a metal halide; and a step of forming a bias electrode on the radiation photoconductive layer.
Metal oxide or metal nitridation with high crystal consistency and low reactivity between the radiation photoconductive layer and the pixel electrode and between the bias electrode and the radiation photoconductive layer and the material of the radiation photoconductive layer A method of manufacturing a radiation detector, further comprising a step of generating an intermediate layer made of an object. 9. The method of manufacturing a radiation detector according to claim 8, further comprising a step of forming a partition wall by physically removing the intermediate layer by physical or chemical etching or by partially removing the intermediate layer by dicing. 10. The intermediate layer is made of a material having a crystal lattice spacing that is approximately equal to or approximateable to the crystal lattice spacing of the radiation photoconductive layer, or approximately equal to or approximateable by √3 or an integral multiple. The manufacturing method of the radiation detector of description. A circuit board in which a plurality of one-dimensional or two-dimensional pixel electrodes and switching elements are provided on a planar substrate;
A radiation photoconductive layer comprising particles of a radiation-to-charge conversion medium that is in contact with the circuit board and converts incident radiation into charges of a magnitude corresponding to its intensity;
A bias electrode capable of applying a predetermined bias voltage to the radiation photoconductive layer;
A first intermediate formed between the radiation photoconductive layer and the pixel electrode by a metal oxide or metal nitride having high crystal matching with the material forming the radiation photoconductive layer and low reactivity. Layers,
A second intermediate formed between the bias electrode and the radiation photoconductive layer by a metal oxide or metal nitride having high crystal matching with the material forming the radiation photoconductive layer and low reactivity. Layers,
A partition partitioning in units of the pixels defined by the first intermediate layer between the radiation photoconductive layer and the pixel electrode;
A radiation detector comprising: 11. The intermediate layer is made of a material having a crystal lattice spacing that is substantially equal to or approximateable to the crystal lattice spacing of the radiation photoconductive layer, or approximately equal to or approximateable by √3 or an integral multiple. The radiation detector described. 13. The radiation detector according to claim 11 or 12, wherein the partition wall is formed by removing the first intermediate layer by physical or chemical etching or by partially dicing.

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