JP2005019772A - Adhesive sheet for working wafer - Google Patents

Adhesive sheet for working wafer Download PDF

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Publication number
JP2005019772A
JP2005019772A JP2003183872A JP2003183872A JP2005019772A JP 2005019772 A JP2005019772 A JP 2005019772A JP 2003183872 A JP2003183872 A JP 2003183872A JP 2003183872 A JP2003183872 A JP 2003183872A JP 2005019772 A JP2005019772 A JP 2005019772A
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Japan
Prior art keywords
adhesive layer
resin
adhesive sheet
polyamide
die
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JP2003183872A
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Japanese (ja)
Inventor
Naoshi Suzuki
直志 鈴木
Tatsushi Kobayashi
辰志 小林
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Tomoegawa Co Ltd
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Tomoegawa Paper Co Ltd
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Priority to JP2003183872A priority Critical patent/JP2005019772A/en
Publication of JP2005019772A publication Critical patent/JP2005019772A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01012—Magnesium [Mg]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/0665—Epoxy resin
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an adhesive sheet for working a wafer, which can be stuck on the silicon wafer at a low temperature less than 100°C and can be peeled excellently on an interface between a radiation cured type pressure-sensitive adhesive layer and an adhesive layer for bonding a die after the irradiation of ultraviolet rays and in which the pressure-sensitive adhesive layer and the adhesive layer are unified. <P>SOLUTION: In the adhesive sheet for working the wafer in which the adhesive layer for bonding the die and the radiation cured type pressure-sensitive adhesive layer are laminated, the adhesive sheet for working the wafer containing a polyamide resin or a polyamide-imide resin having an amine value less than 40 mg KOH/g is used as the adhesive layer. In the adhesive sheet, it is preferable that the softening point of the polyamide resin is 40° to 200°C, and it is preferable that the glass transition temperature of the polyamide-imide resin is less than 150°C. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明が属する技術分野】
本発明は、シリコンウエハをチップ化する際に使用され、またチップ化された後の半導体チップをインターポーザーや他の半導体チップなどにダイボンドする際にも使用されるウエハ加工用接着シートに関する。
【０００２】
【従来の技術】
半導体パッケージは、集積度の向上と共にＤＩＰ（Ｄｕａｌ Ｉｎ−ｌｉｎｅ Ｐａｃｋａｇｅ）に代表される挿入型のパッケージからＱＦＰ（Ｑｕａｄ Ｆｌａｔ Ｐａｃｋａｇｅ）、ＳＯＰ（Ｓｍａｌｌ Ｏｕｔｌｉｎｅ Ｐａｃｋａｇｅ）、ＴＣＰ（Ｔａｐｅ Ｃａｒｒｉｅｒ Ｐａｃｋａｇｅ）といった表面実装型のパッケージへと発展し、多ピン化、狭ピッチ化が進められてきた。これと共にプリント配線板も片面実装から両面実装が可能となり、実装密度が飛躍的に向上した。さらに、パッケージの端子配置を、周辺配置からエリアアレイ状にすることにより一段の高密度化が実現された。その代表としてＢＧＡ（Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ）タイプ、さらにはチップサイズとほぼ同程度のサイズまでのパッケージを小型化したＣＳＰ（Ｃｈｉｐ Ｓｃａｌｅ Ｐａｃｋａｇｅ）が開発された。
【０００３】
電子機器の小型化、薄型化、軽量化の要求に合致したＣＳＰは、携帯型パソコン、携帯電話等に採用され始めた。しかし、近年では携帯電話の多機能化に伴い、メモリ容量の増加と半導体パッケージの小型化、搭載数削減の要求はさらに強くなっている。この要求を実現するのが、複数の半導体ベアチップやシングルチップパッケージを内蔵し、あたかも一つのＬＳＩのような機能を持つＭＣＰ（Ｍｕｌｔｉｐｌｅ Ｃｈｉｐ Ｐａｃｋａｇｅ）である。ＭＣＰの中でもフラッシュメモリとＳＲＡＭを多段に積層したものをＳｔａｃｋｅｄ−ＣＳＰといい、第２．５世代以降の携帯電話には必須の部品となっている。
ところで、上記Ｓｔａｃｋｅｄ−ＣＳＰは、作業効率を向上させる目的でその製造工程に、ダイ接着用接着剤層と粘着剤層を積層してなるウエハ加工用接着シートが使用されている。すなわち、このウエハ加工用接着シートは、そのダイ接着用接着剤層面を、集積回路を組み込みこんだシリコンウエハに接着させ、一方の粘着剤層を治具に貼着させてシリコンウエハを固定し、該シリコンウエハをダイシングしてチップ化する際に使用されるものであって、更に、チップ化された後の半導体チップを、該半導体チップに予め接着された前記ダイ接着用接着剤層を介してインターポーザーや他の半導体チップなどにダイボンドするものである。
【０００４】
従来、このようなウエハ加工用接着シートとしては、ダイ接着用接着剤層と放射線硬化型粘着剤層を積層してなるものが提案されている（例えば、特許文献１参照）。粘着剤として放射線硬化型粘着剤層を使用したウエハ加工用接着シートは、シリコンウエハダイシング後に紫外線を照射して、放射線硬化型粘着剤層表面のタック性を落とすことにより、ダイ接着用接着剤層との界面から剥離するものである。
しかしながら、前記従来のウエハ加工用接着シートでは、放射線硬化型粘着剤層がシリコンウエハの特性に合わせて開発されているため、紫外線照射後にダイ接着用接着剤層との界面で良好に剥離できないという問題を有していた。
また、前記Ｓｔａｃｋｅｄ−ＣＳＰの要求特性から更なるシリコンウエハの薄型化が要求され、５０μｍ以下の薄膜のシリコンウエハを使用した場合では、シリコンウエハとダイ接着用接着剤層とを貼り合わせ工程に必要な１００℃以上の温度によって、シリコンウエハに反りが発生するという問題も生じていた。また、この反りの問題を解決するために、１００℃未満の温度でシリコンウエハとダイ接着用接着剤層とを貼り合わせた場合では、従来のウエハ加工用接着シートは、シリコンウエハとダイ接着用接着剤層との接着力が弱く、ダイシング加工時にシリコンウエハが剥がれてしまうという問題を有していた。
【０００５】
【特許文献１】
特開２００２−２２６７９６号公報
【０００６】
【発明が解決しようとする課題】
本発明は上記課題を解決するためになされたものであり、１００℃未満の低い温度でシリコンウエハに貼り付け可能で、且つ紫外線照射後には放射線硬化型粘着剤層とダイ接着用接着剤層との界面で良好に剥離できる、放射線硬化型粘着剤層とダイ接着用接着剤層が一体となったウエハ加工用接着シートを提供することにある。
【０００７】
【課題を解決するための手段】
本発明のウエハ加工用接着シートは、少なくともダイ接着用接着剤層と放射線硬化型粘着剤層を積層してなるウエハ加工用接着シートであって、前記ダイ接着用接着剤層が、アミン価が４０ｍｇＫＯＨ／ｇ未満のポリアミド樹脂、又はポリアミドイミド樹脂を含有することを特徴とする。
【０００８】
【発明の実施の形態】
本発明のウエハ加工用接着シートは、少なくともダイ接着用接着剤層と放射線硬化型粘着剤層とからなる層を有してなり、前記ダイ接着用接着剤層が、アミン価が４０ｍｇＫＯＨ／ｇ未満のポリアミド樹脂、又はポリアミドイミド樹脂を含有する接着シートである。なお、本発明のウエハ加工用接着シートは、ダイ接着用接着剤層と放射線硬化型粘着剤層の他に、剥離性フィルム、絶縁性フィルム、剥離紙などの支持体が積層されていてもよい。
本発明におけるアミン価が４０ｍｇＫＯＨ／ｇ未満のポリアミド樹脂、ポリアミドイミド樹脂は、ダイ接着用接着剤層に含有され、紫外線照射後に放射線硬化型粘着剤層からのダイ接着用接着剤層の剥離を可能にするとともに、シリコンウエハへのダイ接着用接着剤層の低温での貼り付けを可能にするために使用されるものである。
【０００９】
本発明に用いることができるポリアミド樹脂は、熱可塑性のポリアミド樹脂であって、脂肪族ジアミンとジカルボン酸との縮合により合成される。ジアミンとしては、直鎖脂肪族ジアミン、例えば、エチレンジアミン、ペンタメチレンジアミン、ヘキサメチレンジアミン、オクタメチレンジアミン、デカメチレンジアミン等が挙げられる。また、ジカルボン酸としては、直鎖型、例えば脂肪酸を熱重合して得られるダイマー酸を用いることが好ましく、特に炭素数３８以下のダイマー酸が好ましい。これらのジカルボン酸を構成成分とするポリアミド樹脂を用いた接着剤組成物は、硬化によって、可とう性及び耐水性が良好なものとなる。
上記ポリアミド樹脂は、アミン価が４０ｍｇＫＯＨ／ｇ未満であり、好ましくは３０ｍｇＫＯＨ／ｇ未満である。アミン価が４０ｍｇＫＯＨ／ｇを超えると、紫外線照射後に放射線硬化型粘着剤層がダイ接着用接着剤層の界面から剥離することができない。また、アミン価が４０ｍｇＫＯＨ／ｇを超えると、ダイ接着用接着剤層の保存安定性を損ねる恐れがある。
【００１０】
また、上記ポリアミド樹脂は、軟化点が４０℃以上２００℃未満が好ましく、より好ましくは１５０℃未満である。軟化点が２００℃を超えると、ダイ接着用接着剤層を１００℃未満でシリコンウエハに貼り合わせできにくくなり、一方４０℃未満であると常温でタック性が発現し、取り扱い性が悪化するおそれがあり好ましくない。
ここで、ポリアミド樹脂のアミン価は、ポリアミド樹脂１ｇをトルエン／ｎ−ブタノール混合溶液に溶解し、指示薬としてブロムクレゾールグリーンの０．１％メタノール溶液を、滴定液として０．１Ｎ塩酸溶液を用いて行われ、当量の水酸化カリウムのｍｇで表示される。また、軟化点の測定は、ＪＩＳ Ｋ ２２０７規格による試験方法によって行われる。
【００１１】
また、ダイ接着用接着剤層は、ポリアミドイミド樹脂を含有することにより、紫外線照射後にダイ接着用接着剤層を放射線硬化型粘着剤の界面から剥離することができる。本発明のポリアミドイミド樹脂は、熱可塑性のポリアミドイミド樹脂であって、通常使用される高耐熱性ポリアミドイミド樹脂とは異なり、ガラス転移温度が１５０℃未満のものが好ましく使用され、より好ましくは１２０℃未満である。ガラス転移温度が１５０℃を超えたポリアミドイミド樹脂では、ウエハ加工用接着シートをシリコンウエハに１００℃未満の温度で貼り合わせることが困難になる。
【００１２】
ポリアミドイミド樹脂は、無水トリメリット酸とジイソシアネートとの反応、または無水トリメリット酸クロライドとジアミンとの反応によって合成される。必須成分である無水トリメリット酸の他に、共重合することができる酸成分としては、例えば、シュウ酸、マロン酸、コハク酸、アジピン酸、マレイン酸、マレイン酸無水物、ダイマー酸、水添ダイマー酸等の脂肪族あるいは脂環族ジカルボン酸や、テレフタル酸、イソフタル酸、ナフタレンジカルボン酸等の芳香族ジカルボン酸が挙げられ、単独あるいは２種以上の混合物として用いることができる。ジアミン成分としては、例えば、ヘキサメチレンジアミン、テトラメチレンジアミン、４，４−ジアミノシクロヘキシル等の脂肪族あるいは脂環族ジアミン、ｐ−フェニレンジアミン、３，３−ジアミノジフェニルメタン、４，４−ジアミノベンゾフェノン等の芳香族ジアミン、あるいはそれに対応するジイソシアネートを、単独あるいは２種以上の混合物として重合することができる。ポリアミドイミド樹脂のガラス転移温度を下げるためには、これら酸成分及び／又はアミン成分に、脂肪族あるいは脂環族炭化水素を含有するものを使用することが好ましい。また、トルエン、キシレン、エタノール、メチルエチルケトン等の低沸点汎用溶剤に溶解できることから、脂肪族または脂環族炭化水素を導入して合成した、ポリアミドイミド樹脂が好適に用いられる。
【００１３】
このように、ポリアミド樹脂又はポリアミドイミド樹脂がダイ接着用接着剤層に含まれることにより、紫外線照射後に放射線硬化型粘着剤層界面から剥離可能なダイ接着用接着剤層を得ることができる。なお、ダイ接着用接着剤層には、ポリアミド樹脂とポリアミドイミド樹脂とが、どちらか一方のみ含有させてもよいし、両者を含有させてもよい。
【００１４】
本発明のダイ接着用接着剤層中において、上記ポリアミド樹脂又はポリアミドイミド樹脂の含有比率は、全樹脂に対して２０〜６０重量％であることが好ましい。含有比率が２０重量％未満の場合では、紫外線照射後に放射線硬化型粘着剤層界面からダイ接着用接着剤層を剥離することができにくく、ダイ接着用接着剤層が半硬化状態のときに脆さが生じやすい。一方、６０重量％を超えると、後述する熱硬化性成分の量が相対的に少なくなり、耐熱性等のダイボンディング接着剤としての性能が十分に得られにくい。
【００１５】
本発明のダイ接着用接着剤層には、さらに熱硬化性樹脂を含有させることが好ましい。熱硬化性樹脂としては特に限定されるものではなく、エポキシ樹脂、フェノール樹脂、ビスマレイミド樹脂、オキセタン樹脂、ベンゾオキサジン等が挙げられる。特に、ダイ接着用接着剤層の低温での濡れ性をさらに高める目的で、軟化点が１００℃未満のものが好適に用いられる。また、上記熱硬化性樹脂の硬化剤としては、フェノール樹脂、ポリアミン化合物、アリル化合物、メタリル化合物等が、硬化促進触媒としては、イミダゾール化合物、有機過酸化物等が挙げられる。
【００１６】
ダイ接着用接着剤層の作製方法としては、上述したポリアミド樹脂又はポリアミドイミド樹脂をメチルエチルケトン、テトラヒドロフラン、イソプロピルアルコール、トルエン等の溶剤を用いて、常温〜５０℃程度で溶解させて、ダイ接着用接着剤層作製用の塗料とした後、剥離性フィルム、絶縁性フィルム、剥離紙などの支持体の片面に、上記塗料を塗布してシート化し、乾燥して形成することができる。上記剥離性フィルムおよび絶縁性フィルムとして用いられるフィルム材質は、ポリエチレンテレフタレートなどのポリエステル類、ポリエチレンなどのポリオレフイン類、ポリイミド、ポリアミド、ポリエーテルサルフォン、ポリフェニレンサルファイド、ポリエーテルケトン、トリアセチルセルロースなどが好ましく使用され、さらに好ましくはポリエステル類、ポリオレフィン類およびポリイミドである。剥離性フィルムは、これらの材質からなるフィルムにシリコーンなどの離型剤で剥離処理を施したものが好ましく使用される。
【００１７】
ダイ接着用接着剤層は、シリコンウエハへの熱圧着時のボイドの抑制や流動性の抑制の理由で半硬化状態を適宜コントロールする。半硬化状態のコントロール方法は限定しないが、エージング等でコントロールする事が好ましい。
ダイ接着用接着剤層の乾燥後の厚さは、３〜２００μｍ、好ましくは５〜１００μｍである。ダイ接着用接着剤層を形成したフィルムの保管には、必要に応じて保護フィルムを貼着し、使用時には剥がして用いる。
【００１８】
本発明のウエハ加工用接着シートは、上記で得られたダイ接着用接着剤層と放射線硬化型粘着剤層を常温で積層して得られる。放射線硬化型粘着剤層は、ポリオレフィン等の剥離性フィルム、絶縁性フィルム、剥離紙などの支持体に粘着剤組成物を形成して得ることができる。
放射線硬化型粘着剤層としては、例えばアクリル系粘着ポリマー、紫外線硬化型オリゴマー及び光開始剤で構成されている。紫外線硬化型オリゴマーの骨格は、例えば、ポリエステル、エポキシ、ウレタン等であり、その官能基はＣＨ２＝ＣＨＣＯ−やＣＨ２＝Ｃ（ＣＨ３）ＣＯ−等である。光開始剤は３００〜４５０ｎｍの紫外線を吸収し、光開始剤から紫外線硬化型オリゴマーへのラジカル反応によって反応が開始し、最終的に紫外線硬化型オリゴマーが重合する。放射線硬化型粘着剤層の特性値は、紫外線オリゴマーの種類、ブレンド比率、紫外線照射条件によって制御できる。前記放射線硬化型粘着剤層は、市販されているものとしてヒューグルエレクトロニクス社製の商品名：ＨＵＯ−１２８０からなるシリコンウエハ加工用に用いられる紫外線硬化型ダイシングテープなどを挙げることができる。
【００１９】
【実施例】
以下、本発明を実施例に基づいて詳細に説明するが、本発明はこれらに限定されるものではない。
［ダイ接着用接着剤層の塗料の調製］
下記表１に示す各（Ａ）熱可塑性樹脂をイソプロピルアルコール／トルエン（１／１）混合溶剤に固形分率で２０〜５０重量％になるように常温〜５０℃で溶解させた。続いて、（Ｂ）エポキシ樹脂、（Ｃ）フェノール樹脂、（Ｄ）硬化促進剤を、メチルエチルケトンまたはテトラヒドロフランに、それぞれ表２に示す重量％（固形分）となるように常温〜５０℃程度で溶解させた後、（Ａ）熱可塑性樹脂の溶液を表２に示す重量％（固形分）となるように両液を混合した。その後、溶液を（Ａ）熱可塑性樹脂、（Ｂ）エポキシ樹脂、（Ｃ）フェノール樹脂、（Ｄ）硬化促進剤の全成分の固形分率が４０〜５０重量％になるように調製して、ダイ接着用接着剤層の塗料を得た。
【００２０】
【表１】

Figure 2005019772
【００２１】
【表２】
Figure 2005019772
【００２２】
［ウエハ加工用接着シートの作製］
上記実施例１〜３および比較例１〜４のダイ接着用接着剤層の塗料を、乾燥後の厚さが２５μｍとなるように、剥離処理を施した厚さ３８μｍのポリエステルフィルム上に塗布し、熱風循環型乾燥機中にて１２０℃で３分間乾燥してダイ接着用接着剤層を作製した後、剥離処理を施した厚さ３８μｍのポリエステル保護フィルムを貼り合わせた。
このようにして得られた上記ダイ接着用接着剤層を、片面のポリエステル保護フィルムを剥離し、紫外線硬化型ダイシングテープ（ヒューグルエレクトロニクス社製、商品名：ＨＵＯ−１２８０）の粘着層面と常温で貼り合わせて、ウエハ加工用接着シートを得た。
［特性の評価］
１．低温貼り付け性
前記ウエハ加工用接着シートのダイ接着用接着剤層の他方のポリエステルフィルムを剥がして、厚さ５０μｍのシリコンウエハの裏面に８０℃で貼り合わせた。シリコンウエハへの上記ウエハ加工用接着シートの貼り付け性については、シリコンウエハから接着シートを引っ張りその時の密着状態を目視により観察した。その結果を表３に示した。なお、シリコンウエハから接着シートを引っ張り剥がれなかったものを○、容易に剥がれたものを×とした。
【００２３】
２．剥離性
前記ウエハ加工用接着シートのダイ接着用接着剤層の他方のポリエステルフィルムを剥がして、厚さ５０μｍのシリコンウエハを６０〜１００℃でマウントし、ダイシング、洗浄、乾燥の工程を行った。続いて、紫外線をウエハ加工用接着シートに照射し、エキスパンド工程後、チップ化された半導体チップをダイ接着用接着剤層とともにピックアップし、ダイ接着用接着剤層と放射線硬化型粘着剤層との界面の状態を目視で観察した。その結果を表３に示した。なお、ダイ接着用接着剤層に放射線硬化型粘着剤層が全く付着しないで良好に剥離できたものを○、ダイ接着用接着剤層に放射線硬化型粘着剤層の一部が付着しているものを×とした。
【００２４】
３．耐リフロー性
前記ウエハ加工用接着シートのダイ接着用接着剤層の他方のポリエステルフィルムを剥がして、厚さ５０μｍのシリコンウエハを６０〜１００℃でマウントし、ダイシング、洗浄、乾燥の工程を行った。続いて、紫外線をウエハ加工用接着シートに照射し、エキスパンド工程後、チップ化された半導体チップをダイ接着用接着剤層とともにピックアップした。
次に、ピックアップされた半導体チップを、２０ｍｍ×２０ｍｍで厚さ０．２ｍｍのガラス上に、１００〜１８０℃／１ｓｅｃ／３００〜３０００ｇｆ／ｃｍ２でダイボンディングし、１５０〜１８０℃／１時間加熱しシートを硬化させた。その後、８５℃／８５％ＲＨの恒温恒湿槽中に上記試験用サンプルを１６８時間暴露し、更に最高温度を２６０℃に設定したＩＲリフロー炉にサンプルを通し、ポップコーン現象や剥離がないことを評価した。その結果を表３に示した。なお、比較例１〜４については剥離性の結果が悪かったため、耐リフロー性の評価は実施しなかった。
【００２５】
【表３】
Figure 2005019772
【００２６】
表３の結果から明らかなように、実施例１〜３で得られたウエハ加工用接着シートは、低温貼り付け性、紫外線照射後のダイ接着用接着剤層と放射線硬化型粘着剤層との界面との剥離性の両特性に非常に優れ、シリコンウエハに反りも発生していなかった。さらに、耐リフロー性についても、ボイドの発生や剥離などの不具合は見られなかった。
これに対し、比較例１では、ポリアミド樹脂のアミン価がその上限から外れているため、紫外線照射後にダイ接着用接着剤層を放射線硬化型粘着剤層から剥離することができない。また、比較例２〜４では、熱可塑性樹脂がポリアミド樹脂又はポリアミドイミド樹脂ではないため、低温貼り付け性が悪かったり、紫外線照射後にダイ接着用接着剤層を放射線硬化型粘着剤層から良好に剥離することができなかった。
【００２７】
【発明の効果】
以上説明したように、本発明のウエハ加工用接着シートは、低温でシリコンウエハに貼り合わせすることができ、シリコンウエハの反りが生じなく、紫外線照射後にダイ接着用接着剤層を放射線硬化型粘着剤層から良好に剥離することができる。[0001]
[Technical field to which the invention belongs]
The present invention relates to an adhesive sheet for wafer processing which is used when a silicon wafer is made into chips, and also used when die-bonding a semiconductor chip after being made into a chip to an interposer or another semiconductor chip.
[0002]
[Prior art]
Semiconductor packages are surface-mount types such as an insertion type package represented by DIP (Dual In-line Package) as well as QFP (Quad Flat Package), SOP (Small Outline Package), and TCP (Tape Carrier Package) as the degree of integration increases. The package has been developed to increase the number of pins and narrow pitch. Along with this, the printed wiring board can be mounted from one side to both sides, and the mounting density has been dramatically improved. Furthermore, by increasing the terminal arrangement of the package from the peripheral arrangement to the area array shape, a further increase in density was realized. As a representative example, a BGA (Ball Grid Array) type and a CSP (Chip Scale Package) in which a package having a size almost equal to the chip size has been developed have been developed.
[0003]
CSPs that meet the demands for smaller, thinner, and lighter electronic devices have begun to be used in portable personal computers and mobile phones. However, in recent years, with the increase in the number of functions of mobile phones, demands for increasing memory capacity, miniaturizing semiconductor packages, and reducing the number of mounted devices have become stronger. This requirement is realized by an MCP (Multiple Chip Package) that has a plurality of semiconductor bare chips and a single chip package and has a function similar to one LSI. Among MCPs, a multi-layered stack of flash memory and SRAM is called a Stacked-CSP, which is an indispensable part for mobile phones of 2.5th generation and later.
By the way, the Stacked-CSP uses an adhesive sheet for wafer processing in which a die bonding adhesive layer and a pressure-sensitive adhesive layer are laminated in the production process for the purpose of improving the working efficiency. That is, this wafer processing adhesive sheet, the adhesive layer surface for die bonding is adhered to a silicon wafer incorporating an integrated circuit, one adhesive layer is adhered to a jig to fix the silicon wafer, It is used when dicing the silicon wafer into chips, and further, the semiconductor chips that have been formed into chips are passed through the die bonding adhesive layer that is pre-bonded to the semiconductor chips. It is die-bonded to an interposer or other semiconductor chip.
[0004]
Conventionally, as such an adhesive sheet for wafer processing, a laminate obtained by laminating an adhesive layer for die bonding and a radiation curable pressure-sensitive adhesive layer has been proposed (for example, see Patent Document 1). The adhesive sheet for wafer processing that uses a radiation curable pressure-sensitive adhesive layer as the pressure-sensitive adhesive is irradiated with ultraviolet rays after silicon wafer dicing to reduce the tackiness of the surface of the radiation curable pressure-sensitive adhesive layer. It peels from the interface.
However, in the conventional wafer processing adhesive sheet, the radiation curable pressure-sensitive adhesive layer has been developed in accordance with the characteristics of the silicon wafer, so that it cannot be satisfactorily peeled off at the interface with the die bonding adhesive layer after ultraviolet irradiation. Had a problem.
Further, due to the required characteristics of the Stacked-CSP, further thinning of the silicon wafer is required. When a silicon wafer having a thickness of 50 μm or less is used, the silicon wafer and the adhesive layer for die bonding are required for the bonding process. There has also been a problem that warpage occurs in the silicon wafer due to a temperature of 100 ° C. or higher. In order to solve the problem of warping, when a silicon wafer and a die bonding adhesive layer are bonded at a temperature of less than 100 ° C., the conventional wafer processing adhesive sheet is used for bonding a silicon wafer and a die. The adhesive strength with the adhesive layer is weak, and there is a problem that the silicon wafer is peeled off during dicing.
[0005]
[Patent Document 1]
Japanese Patent Laid-Open No. 2002-226796
[Problems to be solved by the invention]
The present invention has been made to solve the above problems, and can be attached to a silicon wafer at a low temperature of less than 100 ° C., and after irradiation with ultraviolet rays, a radiation curable pressure-sensitive adhesive layer, a die-bonding adhesive layer, Another object of the present invention is to provide an adhesive sheet for wafer processing in which a radiation-curable pressure-sensitive adhesive layer and a die-bonding adhesive layer can be peeled well at the interface.
[0007]
[Means for Solving the Problems]
The wafer processing adhesive sheet of the present invention is a wafer processing adhesive sheet formed by laminating at least a die bonding adhesive layer and a radiation curable pressure-sensitive adhesive layer, and the die bonding adhesive layer has an amine value. It contains a polyamide resin or a polyamideimide resin of less than 40 mg KOH / g.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
The adhesive sheet for wafer processing of the present invention has at least a layer composed of a die bonding adhesive layer and a radiation curable pressure-sensitive adhesive layer, and the die bonding adhesive layer has an amine value of less than 40 mgKOH / g. It is an adhesive sheet containing a polyamide resin or a polyamideimide resin. In addition, the wafer processing adhesive sheet of the present invention may be laminated with a support such as a peelable film, an insulating film, or a release paper in addition to the die-bonding adhesive layer and the radiation curable pressure-sensitive adhesive layer. .
The polyamide resin and polyamideimide resin having an amine value of less than 40 mgKOH / g in the present invention are contained in the die-bonding adhesive layer, and the die-bonding adhesive layer can be peeled off from the radiation curable pressure-sensitive adhesive layer after ultraviolet irradiation. In addition, the die bonding adhesive layer can be used to attach to a silicon wafer at a low temperature.
[0009]
The polyamide resin that can be used in the present invention is a thermoplastic polyamide resin and is synthesized by condensation of an aliphatic diamine and a dicarboxylic acid. Examples of the diamine include linear aliphatic diamines such as ethylene diamine, pentamethylene diamine, hexamethylene diamine, octamethylene diamine, and decamethylene diamine. As the dicarboxylic acid, it is preferable to use a linear type, for example, a dimer acid obtained by thermal polymerization of a fatty acid, and a dimer acid having 38 or less carbon atoms is particularly preferable. Adhesive compositions using polyamide resins containing these dicarboxylic acids as constituents have good flexibility and water resistance upon curing.
The polyamide resin has an amine value of less than 40 mgKOH / g, preferably less than 30 mgKOH / g. When the amine value exceeds 40 mgKOH / g, the radiation-curable pressure-sensitive adhesive layer cannot be peeled off from the interface of the die-bonding adhesive layer after ultraviolet irradiation. On the other hand, if the amine value exceeds 40 mgKOH / g, the storage stability of the adhesive layer for die bonding may be impaired.
[0010]
The polyamide resin preferably has a softening point of 40 ° C or higher and lower than 200 ° C, more preferably lower than 150 ° C. When the softening point exceeds 200 ° C., it becomes difficult to bond the adhesive layer for die bonding to a silicon wafer at less than 100 ° C., whereas when it is less than 40 ° C., tackiness is exhibited at room temperature, and handling properties may be deteriorated. Is not preferable.
Here, the amine value of the polyamide resin is determined by dissolving 1 g of polyamide resin in a toluene / n-butanol mixed solution, using 0.1% methanol solution of bromocresol green as an indicator, and 0.1N hydrochloric acid solution as a titrant. Done and expressed in mg of equivalent potassium hydroxide. The softening point is measured by a test method according to JIS K 2207 standard.
[0011]
Moreover, the die-bonding adhesive layer contains a polyamide-imide resin, so that the die-bonding adhesive layer can be peeled off from the interface of the radiation curable pressure-sensitive adhesive after irradiation with ultraviolet rays. The polyamide-imide resin of the present invention is a thermoplastic polyamide-imide resin, and unlike a commonly used high heat-resistant polyamide-imide resin, one having a glass transition temperature of less than 150 ° C. is preferably used, more preferably 120 It is less than ℃. With a polyamideimide resin having a glass transition temperature exceeding 150 ° C., it becomes difficult to bond the wafer processing adhesive sheet to the silicon wafer at a temperature lower than 100 ° C.
[0012]
The polyamideimide resin is synthesized by a reaction between trimellitic anhydride and diisocyanate or a reaction between trimellitic anhydride chloride and diamine. In addition to trimellitic anhydride, which is an essential component, examples of acid components that can be copolymerized include oxalic acid, malonic acid, succinic acid, adipic acid, maleic acid, maleic anhydride, dimer acid, and hydrogenation. Aliphatic or alicyclic dicarboxylic acids such as dimer acid and aromatic dicarboxylic acids such as terephthalic acid, isophthalic acid and naphthalenedicarboxylic acid can be used, and these can be used alone or as a mixture of two or more. Examples of the diamine component include aliphatic or alicyclic diamines such as hexamethylenediamine, tetramethylenediamine, and 4,4-diaminocyclohexyl, p-phenylenediamine, 3,3-diaminodiphenylmethane, 4,4-diaminobenzophenone, and the like. These aromatic diamines or their corresponding diisocyanates can be polymerized alone or as a mixture of two or more. In order to lower the glass transition temperature of the polyamide-imide resin, it is preferable to use those containing an aliphatic or alicyclic hydrocarbon in these acid components and / or amine components. Moreover, since it can melt | dissolve in low boiling point general purpose solvents, such as toluene, xylene, ethanol, and methyl ethyl ketone, the polyamide imide resin synthesize | combined by introduce | transducing an aliphatic or alicyclic hydrocarbon is used suitably.
[0013]
In this way, by including the polyamide resin or the polyamideimide resin in the die bonding adhesive layer, it is possible to obtain a die bonding adhesive layer that can be peeled off from the radiation curable pressure-sensitive adhesive layer interface after irradiation with ultraviolet rays. In addition, only one of the polyamide resin and the polyamideimide resin may be contained in the adhesive layer for die bonding, or both may be contained.
[0014]
In the die bonding adhesive layer of the present invention, the content ratio of the polyamide resin or the polyamideimide resin is preferably 20 to 60% by weight with respect to the total resin. When the content ratio is less than 20% by weight, it is difficult to peel off the die-bonding adhesive layer from the radiation-curable pressure-sensitive adhesive layer interface after UV irradiation, and the die-bonding adhesive layer is brittle when in the semi-cured state. Is prone to occur. On the other hand, when it exceeds 60% by weight, the amount of a thermosetting component to be described later becomes relatively small, and it is difficult to sufficiently obtain performance as a die bonding adhesive such as heat resistance.
[0015]
The die bonding adhesive layer of the present invention preferably further contains a thermosetting resin. The thermosetting resin is not particularly limited, and examples thereof include an epoxy resin, a phenol resin, a bismaleimide resin, an oxetane resin, and a benzoxazine. In particular, those having a softening point of less than 100 ° C. are suitably used for the purpose of further improving the wettability of the die bonding adhesive layer at low temperatures. Examples of the curing agent for the thermosetting resin include a phenol resin, a polyamine compound, an allyl compound, and a methallyl compound. Examples of the curing accelerator include an imidazole compound and an organic peroxide.
[0016]
As a method for producing a die bonding adhesive layer, the above-mentioned polyamide resin or polyamideimide resin is dissolved at room temperature to about 50 ° C. using a solvent such as methyl ethyl ketone, tetrahydrofuran, isopropyl alcohol, toluene, and the like. After preparing the coating material for preparing the agent layer, the coating material can be applied to one side of a support such as a peelable film, an insulating film, or a release paper to form a sheet and dried. The film material used as the peelable film and insulating film is preferably polyesters such as polyethylene terephthalate, polyolefins such as polyethylene, polyimide, polyamide, polyethersulfone, polyphenylenesulfide, polyetherketone, triacetylcellulose and the like. More preferably used are polyesters, polyolefins and polyimides. As the peelable film, a film made of these materials and subjected to a release treatment with a release agent such as silicone is preferably used.
[0017]
The die bonding adhesive layer appropriately controls the semi-cured state for the purpose of suppressing voids and fluidity during thermocompression bonding to a silicon wafer. The method for controlling the semi-cured state is not limited, but is preferably controlled by aging or the like.
The thickness after drying of the adhesive layer for die bonding is 3 to 200 μm, preferably 5 to 100 μm. For storage of the film on which the adhesive layer for die bonding is formed, a protective film is attached as necessary and peeled off when used.
[0018]
The adhesive sheet for wafer processing of the present invention is obtained by laminating the die bonding adhesive layer obtained above and a radiation curable pressure-sensitive adhesive layer at room temperature. The radiation curable pressure-sensitive adhesive layer can be obtained by forming a pressure-sensitive adhesive composition on a support such as a peelable film such as polyolefin, an insulating film, or a release paper.
The radiation curable pressure-sensitive adhesive layer is composed of, for example, an acrylic pressure-sensitive adhesive polymer, an ultraviolet curable oligomer, and a photoinitiator. The skeleton of the ultraviolet curable oligomer is, for example, polyester, epoxy, urethane or the like, and the functional group is CH 2 ═CHCO— or CH 2 ═C (CH 3 ) CO—. The photoinitiator absorbs ultraviolet rays of 300 to 450 nm, the reaction starts by radical reaction from the photoinitiator to the ultraviolet curable oligomer, and finally the ultraviolet curable oligomer is polymerized. The characteristic value of the radiation curable pressure-sensitive adhesive layer can be controlled by the type of ultraviolet oligomer, blend ratio, and ultraviolet irradiation conditions. Examples of the radiation curable pressure-sensitive adhesive layer that are commercially available include an ultraviolet curable dicing tape that is used for processing silicon wafers, which is manufactured by Hugle Electronics Co., Ltd. under the trade name: HUO-1280.
[0019]
【Example】
EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example, this invention is not limited to these.
[Preparation of paint for adhesive layer for die bonding]
Each (A) thermoplastic resin shown in the following Table 1 was dissolved in a mixed solvent of isopropyl alcohol / toluene (1/1) at room temperature to 50 ° C. so as to have a solid content of 20 to 50% by weight. Subsequently, (B) epoxy resin, (C) phenol resin, and (D) curing accelerator were dissolved in methyl ethyl ketone or tetrahydrofuran at room temperature to about 50 ° C. so that the weight percentage (solid content) shown in Table 2 was obtained. Then, both solutions were mixed so that the solution of the thermoplastic resin (A) was the weight% (solid content) shown in Table 2. Thereafter, the solution is prepared so that the solid content of all components of (A) thermoplastic resin, (B) epoxy resin, (C) phenol resin, and (D) curing accelerator is 40 to 50% by weight, A paint for the adhesive layer for die bonding was obtained.
[0020]
[Table 1]
Figure 2005019772
[0021]
[Table 2]
Figure 2005019772
[0022]
[Preparation of adhesive sheet for wafer processing]
The paints for the adhesive layers for die bonding in Examples 1 to 3 and Comparative Examples 1 to 4 were applied onto a polyester film having a thickness of 38 μm that had been subjected to a release treatment so that the thickness after drying was 25 μm. Then, after drying for 3 minutes at 120 ° C. in a hot air circulation dryer, a die-bonding adhesive layer was prepared, and a 38 μm thick polyester protective film subjected to a release treatment was bonded.
The adhesive layer for die bonding thus obtained was peeled off the polyester protective film on one side, and the adhesive layer surface of an ultraviolet curable dicing tape (manufactured by Hugle Electronics Co., Ltd., trade name: HUO-1280) and at room temperature. Bonding was performed to obtain an adhesive sheet for wafer processing.
[Characteristic evaluation]
1. Low temperature bonding property The other polyester film of the die bonding adhesive layer of the wafer processing adhesive sheet was peeled off and bonded to the back surface of a 50 μm thick silicon wafer at 80 ° C. With respect to the adhesiveness of the wafer processing adhesive sheet to the silicon wafer, the adhesive sheet was pulled from the silicon wafer and the contact state at that time was visually observed. The results are shown in Table 3. The case where the adhesive sheet was not peeled off from the silicon wafer was marked with ◯, and the case where it was easily peeled off was marked with ×.
[0023]
2. Peelability The other polyester film of the die bonding adhesive layer of the wafer processing adhesive sheet was peeled off, and a 50 μm thick silicon wafer was mounted at 60 to 100 ° C., followed by dicing, washing and drying. Subsequently, the wafer processing adhesive sheet is irradiated with ultraviolet rays, and after the expanding process, the chip-formed semiconductor chip is picked up together with the die bonding adhesive layer, and the die bonding adhesive layer and the radiation curable pressure-sensitive adhesive layer The state of the interface was visually observed. The results are shown in Table 3. Note that the radiation-curable pressure-sensitive adhesive layer did not adhere to the die-adhesive adhesive layer at all and could be peeled well, and the die-adhesive adhesive layer had a part of the radiation-curable pressure-sensitive adhesive layer attached. The thing was made into x.
[0024]
3. Reflow resistance The other polyester film of the die bonding adhesive layer of the wafer processing adhesive sheet was peeled off, and a 50 μm thick silicon wafer was mounted at 60 to 100 ° C., followed by dicing, washing, and drying. . Subsequently, ultraviolet rays were applied to the wafer processing adhesive sheet, and after the expanding process, the semiconductor chips formed into chips were picked up together with the die bonding adhesive layer.
Next, the picked-up semiconductor chip is die-bonded on a glass of 20 mm × 20 mm and a thickness of 0.2 mm at 100 to 180 ° C./1 sec / 300 to 3000 gf / cm 2 and heated at 150 to 180 ° C./1 hour. The sheet was cured. Thereafter, the test sample was exposed to a constant temperature and humidity chamber of 85 ° C./85% RH for 168 hours, and the sample was passed through an IR reflow oven set at a maximum temperature of 260 ° C. evaluated. The results are shown in Table 3. In addition, about Comparative Examples 1-4, since the result of peelability was bad, evaluation of reflow resistance was not implemented.
[0025]
[Table 3]
Figure 2005019772
[0026]
As is clear from the results in Table 3, the wafer processing adhesive sheets obtained in Examples 1 to 3 are composed of a low-temperature sticking property, a die-bonding adhesive layer after ultraviolet irradiation, and a radiation-curable pressure-sensitive adhesive layer. It was excellent in both properties of peelability from the interface, and the silicon wafer did not warp. Further, with respect to the reflow resistance, no defects such as void generation and peeling were observed.
On the other hand, in Comparative Example 1, since the amine value of the polyamide resin deviates from the upper limit, the die bonding adhesive layer cannot be peeled off from the radiation curable pressure-sensitive adhesive layer after ultraviolet irradiation. In Comparative Examples 2 to 4, since the thermoplastic resin is not a polyamide resin or a polyamide-imide resin, the low-temperature sticking property is poor, or the die bonding adhesive layer is improved from the radiation curable pressure-sensitive adhesive layer after ultraviolet irradiation. It could not be peeled off.
[0027]
【The invention's effect】
As described above, the adhesive sheet for wafer processing of the present invention can be bonded to a silicon wafer at a low temperature, and the silicon wafer is not warped. It can peel well from the agent layer.

Claims (4)

少なくともダイ接着用接着剤層と放射線硬化型粘着剤層を積層してなるウエハ加工用接着シートであって、前記ダイ接着用接着剤層が、アミン価が４０ｍｇＫＯＨ／ｇ未満のポリアミド樹脂、又はポリアミドイミド樹脂を含有することを特徴とするウエハ加工用接着シート。A wafer processing adhesive sheet comprising at least a die bonding adhesive layer and a radiation curable pressure-sensitive adhesive layer, wherein the die bonding adhesive layer is a polyamide resin having an amine value of less than 40 mgKOH / g, or polyamide An adhesive sheet for wafer processing comprising an imide resin. 前記ポリアミド樹脂の軟化点が４０℃以上２００℃未満であることを特徴とする請求項１記載のウエハ加工用接着シート。The adhesive sheet for wafer processing according to claim 1, wherein a softening point of the polyamide resin is 40 ° C or higher and lower than 200 ° C. 前記ポリアミドイミド樹脂のガラス転移温度が１５０℃未満であることを特徴とする請求項１記載のウエハ加工用接着シート。The adhesive sheet for wafer processing according to claim 1, wherein the polyamide-imide resin has a glass transition temperature of less than 150 ° C. 前記ダイ接着用接着剤層が、前記ポリアミド樹脂又はポリアミドイミド樹脂を全樹脂に対して２０〜６０重量％含有することを特徴とする請求項１〜３のいずれかに記載のウエハ加工用接着シート。The adhesive sheet for wafer processing according to any one of claims 1 to 3, wherein the adhesive layer for die bonding contains 20 to 60 wt% of the polyamide resin or polyamideimide resin with respect to the total resin. .
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135448A (en) * 2006-11-27 2008-06-12 Nitto Denko Corp Dicing die bond film
JP2009198482A (en) * 2008-01-24 2009-09-03 Tokai Rubber Ind Ltd Sensor thin film, manufacturing method thereof and deformation sensor
JP2011042730A (en) * 2009-08-20 2011-03-03 Hitachi Chem Co Ltd Adhesive composition, film-shaped adhesive, adhesive sheet, and semiconductor device
CN109449172A (en) * 2018-10-16 2019-03-08 德淮半导体有限公司 Wafer bonding method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135448A (en) * 2006-11-27 2008-06-12 Nitto Denko Corp Dicing die bond film
JP2009198482A (en) * 2008-01-24 2009-09-03 Tokai Rubber Ind Ltd Sensor thin film, manufacturing method thereof and deformation sensor
JP2011042730A (en) * 2009-08-20 2011-03-03 Hitachi Chem Co Ltd Adhesive composition, film-shaped adhesive, adhesive sheet, and semiconductor device
CN109449172A (en) * 2018-10-16 2019-03-08 德淮半导体有限公司 Wafer bonding method

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