JP2005019623A - Method and apparatus of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a semiconductor device which is capable of preventing damages on an electrode formed of a low-melting-point metal, and efficiently terminating crystal defect of a semiconductor element. <P>SOLUTION: In the method of manufacturing the semiconductor device, the semiconductor element 250 is formed on one surface of a semiconductor substrate 201 and a plurality of electrode layers 220, 230 conducting to the semiconductor element 250 are successively laminated with an interlayer insulating film formed of a silicon oxide film sandwiched between the electrode layers. This method has a last interlayer insulating film laminate forming process for laminating and forming the interlayer insulating film 221 of the uppermost portion among the interlayer insulating films, and a molecular hydrogen irradiating process for irradiating the semiconductor substrate on which the insulating film 221 is laminated and formed with a molecular hydrogen in which the molecular hydrogen 222 is dissociated. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method and an apparatus for manufacturing a semiconductor device, and more particularly to a method and an apparatus for terminating a crystal defect of a semiconductor element.
[0002]
[Prior art]
Conventionally, in order to achieve higher density of semiconductor devices, a multilayer wiring technique that multi-layers wiring that electrically couples elements has been widely used as an effective technique.
The thin film material used for the multilayer wiring is typically divided into an electrode film for electrically coupling each element and an insulating film for insulating between a plurality of laminated electrode films. The following characteristics are required.
[0003]
The electrode film has a low resistance value, high adhesion to an insulating film substrate such as SiO ₂ , high pattern processability, easy formation of a uniform film, chemical and thermal stability This is because of its high nature.
In addition, the insulating film has high insulation, high adhesion to the electrode film, low reactivity with the electrode film material, high pattern workability, and easy formation of a uniform film And high chemical and thermal stability.
[0004]
From the characteristics listed above, aluminum is widely used as the material for the electrode film, and SiO ₂ is widely used as the material for the insulating film because of its compatibility with aluminum, but phosphor glass (PSG). And Si ₃ N ₄ are also used.
However, on the other hand, the progress of high density technology in the manufacture of semiconductor devices as described above, the silicon film, the insulating film, and the interface between the silicon film and the insulating film are not yet processed due to various factors through various processes. There are also defects such as crystal defects based on the presence of silicon atoms having dangling bonds.
[0005]
As a technique for solving the above-described problems, an insulating substrate on which a semiconductor thin film covered with a water-containing interlayer insulating film such as PSG is formed by using a lamp has been conventionally used to improve the operating characteristics of the thin film transistor. There is a method of diffusing hydrogen by heating to 350 ° C. or more and 600 ° C. or less by a rapid heating method (RTA) (see, for example, Patent Document 1).
[0006]
[Patent Document 1]
Japanese Patent Laid-Open No. 2000-36601
[Problems to be solved by the invention]
However, in the above conventional technique, the insulating substrate has to be heated, and when it exceeds 600 ° C., there is a possibility that the electrode composed of a low melting point metal such as aluminum may be damaged, or when it is less than 350 ° C. There are unsolved problems such as insufficient improvement and difficulty in controlling the temperature and heating time of the insulating substrate.
[0008]
The present invention has been made to solve the above-described problems, and is capable of preventing a damage to an electrode made of a low-melting-point metal and manufacturing a semiconductor device capable of efficiently terminating a crystal defect of a semiconductor element. It is an object to provide a method and a manufacturing apparatus.
[0009]
[Means for Solving the Problems]
In order to solve the above-described problem, a first invention according to the present invention is a semiconductor device in which a semiconductor element is formed on one surface of a semiconductor substrate, and a plurality of electrode layers conducting to the semiconductor element are interposed between the electrode layers. A method of manufacturing a semiconductor device, which is formed by sequentially laminating an interlayer insulating film made of a silicon oxide film, comprising: a final interlayer insulating film stacking step of stacking an uppermost interlayer insulating film among the interlayer insulating films; And an atomic hydrogen irradiation step of irradiating atomic hydrogen obtained by dissociating molecular hydrogen onto the semiconductor substrate on which the uppermost interlayer insulating film is stacked by the final interlayer insulating film stacking step. A method of manufacturing a semiconductor device is provided.
[0010]
According to the above configuration, in the atomic hydrogen irradiation process, atomic hydrogen obtained by dissociating molecular hydrogen is irradiated onto the semiconductor substrate on which the uppermost interlayer insulating film is formed in the final interlayer insulating film stacking process. It is supposed to be.
According to the above, it is not necessary to heat the semiconductor substrate itself, and it becomes possible to terminate the crystal defects of the semiconductor element without causing damage to the electrode layer made of the low melting point metal. Further, by providing the atomic hydrogen irradiation step after the final interlayer insulating film stacking step for stacking the uppermost interlayer insulating film, the semiconductor element generated during the semiconductor element formation, electrode layer formation and interlayer insulating film formation It is possible to terminate the crystal defects efficiently with atomic hydrogen.
[0011]
According to a second aspect of the invention, there is provided the semiconductor device according to the first aspect, wherein the atomic hydrogen irradiation step dissociates the atomic hydrogen by bringing hydrogen gas into contact with a high-temperature heating element. A manufacturing method is provided.
According to the above configuration, the atomic hydrogen can be efficiently irradiated onto the semiconductor substrate before the atomic hydrogens in an unstable state are recombined to change into hydrogen molecules.
[0012]
According to a third aspect of the present invention, there is provided the method for manufacturing a semiconductor device according to the second aspect, wherein the heating element is made of a tungsten filament and is heated to 2000 ° C. by energization.
According to said structure, it becomes possible to generate | occur | produce heat to temperature sufficient to dissociate atomic hydrogen by comprising a heat generating body with the filament which consists of tungsten which is a high melting point metal. In addition, the heating element can be configured by a simple method of being heated by energization with an inexpensive material, and atomic hydrogen can be dissociated by an inexpensive and simple method.
[0013]
According to a fourth aspect of the present invention, there is provided an interlayer insulating film in which a semiconductor element is formed on one surface of a semiconductor substrate, and a plurality of electrode layers conducting to the semiconductor element are formed of silicon oxide films between the electrode layers. An apparatus for manufacturing a semiconductor device, in which a plurality of layers are sequentially stacked, an interlayer insulating film forming chamber for forming the interlayer insulating film on the semiconductor substrate, and a semiconductor substrate being carried into or out of the interlayer insulating film forming chamber A load lock chamber, a hydrogen gas supply system for supplying hydrogen gas into the load lock chamber, and a tungsten filament that generates heat by energization in the load lock chamber and dissociates the supplied hydrogen gas into atomic hydrogen And a semiconductor device manufacturing apparatus.
[0014]
According to the above configuration, the semiconductor device manufacturing apparatus generates heat by energizing the loadlock chamber after the semiconductor substrate having the uppermost interlayer insulating film formed thereon is transported to the loadlock chamber in the interlayer insulating film formation chamber. It is possible to supply hydrogen gas toward the heat generating portion of the tungsten filament, dissociate atomic hydrogen, and irradiate the semiconductor substrate.
[0015]
As described above, the semiconductor device manufacturing apparatus can be provided in a conventional semiconductor device manufacturing apparatus so that the tungsten filament can generate heat when energized in the load lock chamber, and hydrogen gas can be supplied toward the heating portion of the tungsten filament. By providing a hydrogen gas supply system as described above, a simple and inexpensive additional configuration can be obtained. According to a fifth aspect of the present invention, there is provided an interlayer insulating film in which a semiconductor element is formed on one surface of a semiconductor substrate, and a plurality of electrode layers conducting to the semiconductor element are formed of silicon oxide films between the electrode layers. An apparatus for manufacturing a semiconductor device, in which layers are sequentially formed with an interlayer insulating film forming chamber for forming the interlayer insulating film on the semiconductor substrate, and the semiconductor substrate on which the interlayer insulating film is formed stacked A cooling stage chamber for cooling, a hydrogen gas supply system that supplies hydrogen gas into the cooling stage chamber, and tungsten that generates heat by energization in the cooling stage chamber and dissociates the supplied hydrogen gas into atomic hydrogen There is provided a semiconductor device manufacturing apparatus comprising a filament.
[0016]
According to the above configuration, the semiconductor device manufacturing apparatus generates heat by energization in the cooling stage chamber after the semiconductor substrate on which the uppermost interlayer insulating film is stacked is transferred to the cooling stage chamber in the interlayer insulating film forming chamber. It is possible to supply hydrogen gas toward the heat generating portion of the tungsten filament, dissociate atomic hydrogen, and irradiate the semiconductor substrate.
[0017]
As described above, the semiconductor device manufacturing apparatus can be provided in a conventional semiconductor device manufacturing apparatus so that the tungsten filament can generate heat when energized in the cooling stage chamber, and hydrogen gas can be supplied toward the heating portion of the tungsten filament. By providing a hydrogen gas supply system as described above, a simple and inexpensive additional configuration can be obtained.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
A first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 is a process diagram showing a flow of a method of manufacturing a semiconductor device according to the first embodiment of the present invention.
As shown in FIG. 2C, which shows a cross-sectional configuration of a semiconductor device manufactured by the manufacturing method according to the embodiment of the present invention, the semiconductor device 200 includes a semiconductor region having a source region 202 and a drain region 203. A first interlayer insulating film 207 is formed so as to cover the gate insulating film 205 and the gate electrode portion 206 provided on 201, and is electrically connected to the source region 202 and the drain region 203 through the contact hole 204. An electrode 220 is formed. Then, a second interlayer insulating film 221 which is the uppermost interlayer insulating film is provided from above, and a second electrode 230 is formed which is electrically connected to the first electrode 220 through the contact hole 240, and is protected from above. The film 231 covers the structure.
[0019]
In order to manufacture the semiconductor device 200, first, as shown in FIG. 1, in the semiconductor element formation step (step S110), as shown in FIG. 2A, a CVD technique and photolithography are performed on the semiconductor substrate 201. The gate insulating film 205 and the gate electrode portion 206 are formed and removed by the technique and the etching technique, the first interlayer insulating film 207 is laminated, and the contact hole 204 reaching the source region 202 or the drain region 203 is opened. Thus, the semiconductor element 250 is formed.
[0020]
Next, in the electrode wiring formation step (step S120), as shown in FIG. 2B, the first electrode 220 made of a metal such as aluminum, which is electrically connected to the source region 202 or the drain region 203, is formed by PVD technology and An etching technique or the like is provided from the contact hole on the semiconductor device 200 and wired, and the process proceeds to the interlayer insulating film stacking step (step S130).
[0021]
Next, in the interlayer insulating film stacking step (step S130), as shown in FIG. 2B, an interlayer insulating film 221 such as SiO ₂ is stacked by CVD, and the uppermost interlayer insulating film is stacked. The contact hole opening and electrode wiring forming steps are repeated until the final interlayer insulating film stack forming step (step S140) to be formed, and the process proceeds to step S150.
[0022]
Next, in the semiconductor element characteristic improving step (step S150), the hydrogen gas is dissociated by thermal energy to change into atomic hydrogen 222, and the semiconductor device 200 is irradiated with atomic hydrogen. The atomic hydrogen irradiation process corresponds to step S150. Next, in the final electrode wiring formation process (step S160), as shown in FIG. 2C, the second electrode wiring 230 which is the uppermost electrode is formed, and the process proceeds to the protective film formation process (step S170). .
[0023]
Next, in the protective film forming step (step S170), as shown in FIG. 2C, for example, Si ₃ N ₄ for covering and protecting the surface of the semiconductor device 200 on which the semiconductor element 250 is formed, A protective film 231 made of PSG, polyimide, or the like is formed, and the manufacturing of the semiconductor device 200 is completed.
According to the above, since the semiconductor element characteristic improving process is provided after the electrode wiring forming process and the interlayer insulating film forming process and before the protective film forming process, not only the semiconductor element forming process but also the electrode wiring forming process and the interlayer insulating film forming are performed. It is possible to terminate the crystal defects of the semiconductor element 250 generated in the process with atomic hydrogen and efficiently terminate the crystal defects before forming a protective film made of Si ₃ N ₄ or the like having a barrier property against hydrogen. It becomes possible to make it.
[0024]
FIG. 3 is a schematic front view showing a cross-sectional configuration of the semiconductor device manufacturing apparatus according to the first embodiment of the present invention. Semiconductor device manufacturing apparatus 300 according to the present embodiment has a tungsten gas filament that generates heat when energized and a hydrogen gas supply that supplies hydrogen gas toward the heat generating portion of the tungsten filament in a conventional vertical CVD processing apparatus. System.
[0025]
As shown in FIG. 3, the manufacturing apparatus 300 includes a load lock chamber LL for loading and unloading the semiconductor device 200 into and out of the manufacturing apparatus 300, a processing chamber F1 for performing a CVD process on the semiconductor device 200, And a heater HT provided so as to surround the processing chamber F1.
The load lock chamber LL is connected to the processing chamber F1 via a gate valve GV32 for maintaining a good reduced pressure state.
[0026]
In addition, the load lock chamber LL can accommodate the gate valve GV31 for carrying the semiconductor device 200 in and out of the load lock chamber LL, and a plurality of semiconductor devices 200, and the load lock chamber LL, the processing chamber F1, and the like. And a wafer boat 330 for transporting the stored semiconductor device 200, and a vacuum pump (not shown) for reducing the pressure inside the load lock chamber LL is connected.
[0027]
Furthermore, the load lock chamber LL has a tungsten filament 323 that generates heat when energized in the room, and a hydrogen gas supplier 20 that supplies the hydrogen gas 322 toward the heat generating portion of the tungsten filament 323 in the room is connected thereto.
Next, the operation of the manufacturing apparatus 300 will be described.
The gate valve GV31 leading to the load lock chamber LL is opened, the semiconductor device 200 that has undergone the semiconductor element formation step (step S110) and the electrode wiring formation step (step S120) is housed in the wafer boat 330, and the gate valve GV31 is closed. A vacuum pump (not shown) is operated to decompress the load lock chamber LL.
[0028]
The gate valve GV32 between the load lock chamber LL and the processing chamber F1 is opened, the wafer boat 330 is moved into the processing chamber F1, and the gate valve GV32 is closed.
Then, the uppermost interlayer insulating film 221 is formed on the semiconductor device 200, the final interlayer insulating film forming step (step S140) is completed, the gate valve GV32 is opened, and the wafer boat 330 is moved into the load lock chamber LL. Then, the gate valve GV32 is closed, and the process proceeds to the semiconductor element characteristic improving step (step S150).
[0029]
In the load lock chamber LL, the hydrogen gas 322 controlled by the mask flow controller 321 at a predetermined flow rate is supplied from the hydrogen gas supply pipe 320 toward the heat generating portion of the tungsten filament 323 that is heated when energized. Then, the hydrogen gas that has contacted the heat generating portion of the tungsten filament 323 at about 2000 ° C. is dissociated by thermal energy to change into atomic hydrogen, and is irradiated onto the semiconductor device 200 to complete the semiconductor element characteristic improving step (step S150). To do.
[0030]
Then, the gate valve GV31 is opened, and the semiconductor device 200 accommodated in the wafer boat 330 is carried out of the manufacturing apparatus 300.
According to the above, since the manufacturing apparatus 300 is configured by adding a hydrogen gas supply system and a tungsten filament to the load lock chamber of the existing vertical CVD apparatus, it can be handled by modifying the existing manufacturing apparatus. Therefore, it is not necessary to newly introduce a large-scale device, and the facility cost can be kept low.
[0031]
In the semiconductor device manufacturing apparatus 300 according to the present embodiment, the load lock chamber LL and the processing chamber F1 are set in a reduced pressure environment, but the same effect can be obtained in an environment filled with an inert gas such as nitrogen or argon. Is obtained.
A second embodiment of the present invention will be described with reference to FIG.
FIG. 4 is a schematic plan view showing a cross-sectional configuration of the semiconductor device manufacturing apparatus according to the first embodiment of the present invention. Semiconductor device manufacturing apparatus 400 according to the present embodiment is a conventional single wafer processing type CVD processing apparatus, a tungsten filament that generates heat when energized, and a hydrogen gas that supplies hydrogen gas toward the heating portion of the tungsten filament. And a gas supply system.
[0032]
As shown in FIG. 4, the manufacturing apparatus 400 includes a wafer cassette chamber WF1 for carrying a wafer cassette 405 containing the semiconductor device 200 into the manufacturing apparatus 400, and a processing chamber for performing a CVD process on the semiconductor device 200. PM1 and PM2, a cooling stage chamber CS for gradually cooling the semiconductor device 200 after the processing, and a wafer cassette for carrying out the wafer cassette 405 containing the semiconductor device 200 after the slow cooling from the manufacturing apparatus 400 The chamber WF2 and a transfer chamber 406 including a transfer device 407 for carrying the semiconductor device 200 into and out of each chamber are provided.
[0033]
Wafer cassette chambers WF 1 and WF 2, processing chambers PM 1 and PM 2, and cooling stage chamber CS are transferred to transfer chamber 406 via gate valves GV 1 to GV 5 for maintaining a good reduced pressure state between each chamber and transfer chamber 406. It is connected.
The wafer cassette chambers WF1 and WF2 have gate valves GV6 and GV7 for carrying the wafer cassette 405 into and out of the wafer cassette chamber, and are connected to a vacuum pump (not shown) for depressurizing the wafer cassette chamber. .
[0034]
Furthermore, the cooling stage chamber CS has a tungsten filament 323 that generates heat when energized, and is connected to a hydrogen gas supply pipe 320 that supplies the hydrogen gas 322 toward the heating portion of the tungsten filament 323 in the chamber.
Next, the operation of the manufacturing apparatus 400 will be described.
The wafer cassette 405 containing the semiconductor device 200 that has undergone the semiconductor element formation process (step S110) and the electrode wiring formation process (step S120) is opened in the wafer cassette chamber WF1 by opening the gate valve GV6 of the wafer cassette chamber WF1 of the manufacturing apparatus 400. And the gate valve GV6 is closed and the vacuum pump is operated to depressurize the wafer cassette chamber WF1.
[0035]
The gate valve GV1 between the wafer cassette chamber WF1 and the transfer chamber 406 is opened, the transfer device 407 holds the semiconductor device 200 in the wafer cassette chamber WF1, transfers it into the transfer chamber 406, and closes the gate valve GV1.
The semiconductor device 200 transferred into the transfer chamber 406 is transferred to the processing chamber PM1 or PM2 by the transfer device 407. For example, it is assumed here that the semiconductor device 200 is transferred to the processing chamber PM1. The gate valve GV2 between the transfer chamber 406 and the processing chamber PM1 is opened, the semiconductor device 200 is transferred into the processing chamber PM1 by the transfer device 407, and the gate valve GV2 is closed.
[0036]
In the semiconductor device 200, the uppermost interlayer insulating film 221 is formed in the processing chamber PM1, the final interlayer insulating film forming step (step S140) by the CVD process is finished, the gate valve GV2 is opened, and the transfer device 407 transfers the transfer chamber. It is conveyed into 406. Then, the gate valve GV4 between the transfer chamber 406 and the cooling stage chamber CS is opened, and the transfer device 407 transfers the semiconductor device 200 into the cooling stage chamber CS that has been previously kept in a reduced pressure state, and closes the gate valve GV4. .
[0037]
In the cooling stage chamber CS, the hydrogen gas 322 controlled to a predetermined flow rate by the mask flow controller 321 is supplied from the hydrogen gas supply pipe 320 toward the heat generating part of the tungsten filament 323 that is energized and generates heat. Then, the hydrogen gas that has contacted the heat generating portion of the tungsten filament 323 at about 2000 ° C. is dissociated by thermal energy to change into atomic hydrogen, and is irradiated onto the semiconductor device 200 to complete the semiconductor element characteristic improving step (step S150). To do.
[0038]
Then, the gate valve GV4 between the transfer chamber 406 and the cooling stage chamber CS is opened, the transfer device 407 transfers the semiconductor device 200 to the transfer chamber 406, and the gate valve GV4 is closed.
The gate valve GV5 between the transfer chamber 406 and the wafer cassette chamber WF2 is opened, and the transfer device 407 transfers and stores the semiconductor device 200 in the wafer cassette 405 in the wafer cassette chamber WF2 that has been kept in a decompressed state in advance. Close GV5.
[0039]
When all the semiconductor devices 200 are stored in the wafer cassette 405 in the wafer cassette chamber WF2, the gate valve GV7 is opened and the wafer cassette 405 is carried out of the manufacturing apparatus 400.
According to the above, since the manufacturing apparatus 400 is configured by adding the hydrogen gas supply system and the tungsten filament to the cooling stage chamber of the existing single wafer processing type CVD apparatus, the existing manufacturing apparatus is modified. Therefore, it is not necessary to newly introduce a large-scale device, and the equipment cost can be kept low. Further, the characteristics of the semiconductor element can be improved by using the slow cooling time of the semiconductor device in the cooling stage chamber, so that no extra time is required to improve the characteristics of the semiconductor element and the manufacturing cost is kept low. It becomes possible.
[0040]
In semiconductor device manufacturing apparatus 400 according to the present embodiment, a wafer cassette chamber for loading and unloading is provided, but loading and unloading may be shared by one wafer cassette chamber. In addition, the processing chamber for performing the CVD process has a configuration of two chambers, PM1 and PM2, but may have a configuration of one chamber or a configuration of three or more chambers, and further, either the processing chamber PM1 or PM2 may be subjected to the CVD processing. The remaining processing chambers may be configured as processing chambers for performing resist processing, etching processing, PVD processing, and the like.
[0041]
Further, the wafer cassette chambers WF1 and WF2, the transfer chamber 406, the processing chambers PM1 and PM2, and the cooling stage chamber CS are set to a reduced pressure environment. However, the same applies to an environment filled with an inert gas such as nitrogen or argon. An effect is obtained.
[Brief description of the drawings]
FIG. 1 is a process diagram showing a flow of a manufacturing method of a semiconductor device according to a first embodiment of the invention.
FIG. 2 is a diagram showing a cross section of a semiconductor device according to an embodiment of the present invention.
FIG. 3 is a schematic plan view showing a cross-sectional configuration of the semiconductor device manufacturing apparatus according to the first embodiment of the present invention.
FIG. 4 is a schematic plan view showing a cross-sectional configuration of a semiconductor device manufacturing apparatus according to a second embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 200 ... Semiconductor device, 201 ... Semiconductor substrate, 250 ... Semiconductor element, 221 ... Uppermost interlayer insulation film, 222 ... Atomic hydrogen, 320 ... Hydrogen gas supply pipe, 322 ... Hydrogen gas, 323 ... Tungsten filament, CS ... Cooling Stage room, LL ... Load lock room

Claims (5)

A semiconductor device in which a semiconductor element is formed on one surface of a semiconductor substrate, and a plurality of electrode layers electrically connected to the semiconductor element are sequentially stacked with an interlayer insulating film made of a silicon oxide film interposed between the electrode layers. A device manufacturing method comprising:
A final interlayer insulating film stacking step of stacking and forming an uppermost interlayer insulating film among the interlayer insulating films;
An atomic hydrogen irradiation step of irradiating atomic hydrogen obtained by dissociating molecular hydrogen on the semiconductor substrate on which the uppermost interlayer insulating film is formed by the final interlayer insulating layer stacking step. A method of manufacturing a semiconductor device. 2. The method of manufacturing a semiconductor device according to claim 1, wherein in the atomic hydrogen irradiation step, the atomic hydrogen is dissociated by bringing hydrogen gas into contact with a high-temperature heating element. The method of manufacturing a semiconductor device according to claim 2, wherein the heating element is made of a tungsten filament and is heated to 2000 ° C. by energization. A semiconductor element is formed on one surface of a semiconductor substrate, and a plurality of electrode layers conducting to the semiconductor element are sequentially stacked with an interlayer insulating film composed of a silicon oxide film interposed between the electrode layers. A semiconductor device manufacturing apparatus comprising:
An interlayer insulating film forming chamber for forming the interlayer insulating film on the semiconductor substrate;
A load lock chamber for carrying the semiconductor substrate into or out of the interlayer insulating film formation chamber;
A hydrogen gas supply system for supplying hydrogen gas into the load lock chamber;
An apparatus for manufacturing a semiconductor device, comprising: a tungsten filament that generates heat when energized in the load lock chamber and dissociates the supplied hydrogen gas into atomic hydrogen. A semiconductor element is formed on one surface of a semiconductor substrate, and a plurality of electrode layers conducting to the semiconductor element are sequentially stacked with an interlayer insulating film composed of a silicon oxide film interposed between the electrode layers. A semiconductor device manufacturing apparatus comprising:
An interlayer insulating film forming chamber for forming the interlayer insulating film on the semiconductor substrate;
A cooling stage chamber for gradually cooling the semiconductor substrate on which the interlayer insulating film is laminated;
A hydrogen gas supply system for supplying hydrogen gas into the cooling stage chamber;
An apparatus for manufacturing a semiconductor device, comprising: a tungsten filament that generates heat when energized in the cooling stage chamber and dissociates the supplied hydrogen gas into atomic hydrogen.

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