JP2004536434A - LED switching device - Google Patents

LED switching device Download PDF

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Publication number
JP2004536434A
JP2004536434A JP2003514857A JP2003514857A JP2004536434A JP 2004536434 A JP2004536434 A JP 2004536434A JP 2003514857 A JP2003514857 A JP 2003514857A JP 2003514857 A JP2003514857 A JP 2003514857A JP 2004536434 A JP2004536434 A JP 2004536434A
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Prior art keywords
winding
switching device
switching
inductance
self
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Inventor
マルセル ジェイ エム バックス
エングベルト ビー ジー ナイホフ
Original Assignee
ルミレッズ ライティング ユーエス リミテッドライアビリティ カンパニー
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/37—Converter circuits
    • H05B45/3725—Switched mode power supply [SMPS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Abstract

A switching arrangement includes first, second and third circuits. The first circuit is connected between a first input and a first output of the switching arrangement. The first circuit has a self-inductance, a capacitor and a diode. The second circuit is connected between the first input and a second input of the switching arrangement, and includes a switching element. The third circuit is connected between the first output and a second output of the switching arrangement, and has a diode and an inductive winding. The switching arrangement further includes a transformer having a primary winding, where the inductive winding forms a secondary winding of the transformer

Description

【技術分野】
【０００１】
本発明は、負荷を作動させるスイッチング装置に関し、前記スイッチング装置は、
供給電源に接続する入力端子と、
作動されるべき前記負荷に接続する出力端子と、
少なくとも自己インダクタンス、キャパシタ、及びダイオードを含む、前記入力端子の１つと前記出力端子の１つとの間の第１直列回路と、
少なくとも前記自己インダクタンス及び高周波数において導通状態及び非導通状態に交互に切り替えられるスイッチング素子を含む、前記入力端子間の第２直列回路と、
少なくとも前記ダイオード及び誘導巻線を含む、前記出力端子間の第３直列回路と、を備える。
【背景技術】
【０００２】
導入部で述べられた種類のスイッチング装置は、米国特許第5,682,306号から既知である。ＳＥＰＩＣ（シングルエンド一次誘導コンバータ）の名前によっても既知である前記既知のスイッチング装置において、自己インダクタンスは、第１エネルギ貯蔵素子を形成し、実質的に入力端子に加えられる入力電圧の大きさの電圧が、キャパシタの両端間に生じるだろう。この型式のコンバータは、負荷として少なくとも１つのＬＥＤを有するＬＥＤアレイを駆動するのに適していると思われる。ＬＥＤアレイは、光源、例えば信号機としての使用に非常に適しているが、これは、とりわけこのような信号機における使用に適した白熱灯と比較して低いエネルギ消費のため、及び前記ＬＥＤアレイが当該白熱灯より大幅に長い寿命を持つという事実のためである。このような応用において、当該スイッチング装置及びＬＥＤアレイは、一般に、電力供給源として公共の電気の幹線から電力を供給される。
【０００３】
前記既知のスイッチング装置の１つの欠点は、相対的に高いレベルの無線妨害（ＥＭＩ）の発生である。
【発明の開示】
【発明が解決しようとする課題】
【０００４】
本発明の目的は、ＥＭＩレベルを減少する対策を提供することである。
【課題を解決するための手段】
【０００５】
この目的を達成するために、導入において本発明によるスイッチング装置として述べられた種類のスイッチング装置は、誘導巻線が、第１及び第２直列回路の両方の一部を形成する一次巻線を持つ変圧器の二次巻線を形成することを特徴とする。
【０００６】
この方法において、スイッチング素子の高周波数スイッチングにより生じる自己インダクタンスを横切る高周波電圧信号は、大いに効率的に補正される。結果として、ＥＭＩの生成は、大幅に減少されるだろう。前記一次巻線による完全な補正は、実際には起こらないので、更なる減少は、入力端子間にバイパスキャパシタを配置することにより有利に達成されることができ、前記キャパシタは、前記スイッチング素子により前記自己インダクタンスにおいて生成された高周波リップル電流信号に対するバイパスとして機能する。
【０００７】
最適な結果は、前記装置が、
2π[(L1+Ls)C3]1/2＞δ
という関係によって構成され、ここで、
L1は、H単位での前記自己インダクタンスの大きさ、
Lsは、H単位での前記二次巻線の前記自己インダクタンスの大きさ、
C3は、F単位での前記キャパシタの静電容量、
δは、前記スイッチング素子が非導通状態に切り替えられている前記スイッチング素子の各スイッチング期間の秒単位での分割である。
【０００８】
本発明による前記スイッチング装置の他の実施例において、前記二次巻線は、第１巻線及び第２巻線で構成され、前記第２巻線は、前記第１直列回路に組み込まれ、また、前記第１巻線との接続点を持つ。従って、自動変圧器機能は達成され、この結果として、非導通状態への前記スイッチング素子の周期的なスイッチングが、減少された電流値において起こる。他の結果は、これがδの増大になるという事実である。両方の結果は、一方ではＥＭＩの量の減少の結果として、他方ではより低い周波数への変更の結果として、ＥＭＩの好ましくない効果の減少に関して有利な効果を持つ。
【０００９】
本発明の上述の及び更に他の態様は、本発明によるスイッチング装置の図面を参照して以下により詳細に説明されるであろう。
【発明を実施するための最良の形態】
【００１０】
少なくとも１つのＬＥＤを作動させる本発明によるスイッチング装置が図１に示され、前記スイッチング装置は、
供給電源に接続する入力端子1、2と、
作動されるべき前記ＬＥＤに接続する出力端子3、4と、
少なくとも自己インダクタンスL、キャパシタC及びダイオードDを含む、前記入力端子の１つ1と前記出力端子の１つ3との間の第１直列回路Iと、
少なくとも自己インダクタンスL及び高周波数において導通状態及び非導通状態に交互に切り替えられるスイッチング素子Sを含む、入力端子1と2との間の第２直列回路IIと、
少なくともダイオードD及び誘導巻線SWを含む、出力端子3と4との間の第３直列回路IIIと、を備える。更に、バッファキャパシタCBが、出力端子3と4との間に配置される。
【００１１】
前記誘導巻線は、前記第１及び第２直列回路の両方の一部を形成する一次巻線PWを持つ変圧器Tの二次巻線SWを形成する。スイッチング素子Sと一次巻線PWとの間の接続点は、スイッチング素子Sのドレインdを形成する。
【００１２】
有利な実施例において、バイパスキャパシタBYCは、入力端子1と2との間に配置される。
【００１３】
図２に示される本発明によるスイッチング装置の変形において、前記二次巻線は、第１巻線SW1及び第２巻線SW2により構成され、前記第２巻線は、第１直列回路Iに組み込まれ、また、第１巻線SW1との接続点VBを持つ。好ましくは、第２巻線SW2は、スナバ回路5によって前記出力端子の１つに直接接続される。スナバ回路5は、特に、スイッチング素子Sがオフに切り替えられる場合に生じる電圧ピークの減少を提供する。これは、干渉信号の生成の更なる減少を達成するのを助け、驚くことに前記誘導巻線の電力伝達において無視してよい効果しか持たない。
【００１４】
図２に描かれる本発明によるスイッチング装置の実際的な実施例は、特に、110V、60Hzの供給電源において作動されるのに適している。前記スイッチング装置は、例えば信号機の一部を形成するＬＥＤアレイを作動させるのに適している。実際に使用されるアレイは、例えば、１８のＬＥＤを有するLumileds Lightingにより作られたGR690053224の型式のものであり、前記ＬＥＤは、緑の光を放射する。前記スイッチング装置は、作動中に、とりわけ前記アレイの温度に従って300mAないし1.1Aの範囲にわたる制御された電流を前記アレイに供給することができる。
【００１５】
前記スイッチング装置において、前記自己インダクタンスは、ほぼ3900μH程度の値L1を持ち、キャパシタCは、47nFの静電容量C3を持ち、変圧器Tの二次巻線SW2は、120μHの自己インダクタンスLsを持つ。一次巻線PWと二次巻線SWとの巻線比は、１：１である。前記一次巻線及び前記二次巻線は、それぞれ62及び56の巻数を有する。前記二次巻線の第１巻線SW1及び第２巻線SW2は、それぞれ28の巻数と50μHの自己インダクタンスとを持つ。バッファキャパシタCBは、330μHの値を持つ。スイッチング素子Sは、International Rectifierにより作られたＭＯＳＦＥＴ型のIRF730により構成される。バイパスキャパシタBYCの値は、100nFである。
【００１６】
上述されたように接続されたアレイが、110Vの整流された正弦波電圧において作動される場合、前記スイッチング素子は、50kHzと最大で160kHzとの間で変化する高周波数における前記供給電源のゼロ交差中に導通及び非導通状態に交互に切り替えられる。
【００１７】
図３Ａは、上述の実際的なスイッチング装置の電流及び電圧図を示し、横軸は、時間軸を形成する。前記スイッチング装置は、直流電圧120Vで給電される。曲線100は、スイッチング素子Sを形成する前記ＭＯＳＦＥＴのドレインdの位置における電圧の動向を示す。ドレインdの位置を流れる電流は、グラフ101に示される。
【００１８】
比較により、図３Ｂは、図３Ａに示される前記誘導巻線と全く同様に作り上げられた１つの誘導巻線のみを有するスイッチング装置の電流及び電圧図を示す。前記図において、曲線200及び201は、それぞれ前記ドレインの位置における電圧の動向及び前記ドレインの位置における電流の動向を示す。
【００１９】
前記スイッチング素子が非導通状態に切り替えられる前記スイッチング素子の各スイッチング期間の分割δは、7μsになる。前記曲線101と201との間の比較は、前記電流値における変化が、曲線201の場合の87mAから本発明による前記スイッチング装置の場合の17mAに減少されたことを示す。更に、非導通状態への前記スイッチング素子の周期的スイッチングの間に生じる高周波リップルが、本発明による前記スイッチング装置の場合に大きさにおいて著しく減少したことは明確である。この方法において、前記自己インダクタンスを横切る高周波信号の発生は、前記スイッチング素子の高周波スイッチングの結果として、実質的に全体的に防がれ、その結果、ＥＭＩの生成は、大幅に減少されている。
【図面の簡単な説明】
【００２０】
【図１】本発明によるスイッチング装置の図を示す。
【図２】図１に示されるようなスイッチング装置の変形を示す。
【図３Ａ】本発明によるスイッチング装置の電流及び電圧図を示す。
【図３Ｂ】本発明によらないスイッチング装置の電流及び電圧図を示す。【Technical field】
[0001]
The present invention relates to a switching device that operates a load, wherein the switching device includes:
An input terminal connected to the power supply,
An output terminal connecting to the load to be actuated;
A first series circuit between one of the input terminals and one of the output terminals, including at least a self-inductance, a capacitor, and a diode;
A second series circuit between the input terminals, including a switching element that is alternately switched between a conducting state and a non-conducting state at least at the self-inductance and a high frequency,
A third series circuit between the output terminals including at least the diode and the induction winding.
[Background Art]
[0002]
A switching device of the kind mentioned in the introduction is known from US Pat. No. 5,682,306. In the known switching device, also known by the name of a SEPIC (single-ended primary inductive converter), the self-inductance forms a first energy storage element and a voltage substantially equal to the input voltage applied to the input terminal. Will occur across the capacitor. This type of converter appears to be suitable for driving an LED array having at least one LED as a load. LED arrays are very suitable for use as light sources, for example as traffic lights, but this is due in particular to a lower energy consumption compared to incandescent lamps suitable for use in such traffic lights, and that the LED arrays are Due to the fact that they have a much longer lifespan than incandescent lamps. In such applications, the switching devices and LED arrays are generally powered from a public electricity mains as a power source.
[0003]
One disadvantage of the known switching devices is the generation of relatively high levels of radio interference (EMI).
DISCLOSURE OF THE INVENTION
[Problems to be solved by the invention]
[0004]
It is an object of the present invention to provide a measure to reduce EMI levels.
[Means for Solving the Problems]
[0005]
To this end, a switching device of the kind mentioned in the introduction as a switching device according to the invention has an induction winding with a primary winding forming part of both a first and a second series circuit. The secondary winding of the transformer is formed.
[0006]
In this way, the high-frequency voltage signal across the self-inductance caused by the high-frequency switching of the switching element is corrected very efficiently. As a result, EMI production will be greatly reduced. Further reduction can be advantageously achieved by placing a bypass capacitor between the input terminals, since the complete correction by the primary winding does not actually take place, the capacitor being switched by the switching element. It functions as a bypass for the high-frequency ripple current signal generated in the self-inductance.
[0007]
The optimal result is that the device
2π [(L1 + Ls) C3] 1/2 > δ
, Where
L1 is the magnitude of the self-inductance in H units,
Ls is the magnitude of the self-inductance of the secondary winding in H units,
C3 is the capacitance of the capacitor in F units,
δ is a division in seconds of each switching period of the switching element in which the switching element is switched to the non-conductive state.
[0008]
In another embodiment of the switching device according to the present invention, the secondary winding includes a first winding and a second winding, and the second winding is incorporated in the first series circuit; , And a connection point with the first winding. Thus, an automatic transformer function is achieved, as a result of which periodic switching of the switching element to a non-conducting state takes place at a reduced current value. Another consequence is the fact that this leads to an increase in δ. Both results have a beneficial effect on reducing the undesirable effects of EMI, on the one hand as a result of reducing the amount of EMI, and on the other hand, as a result of changing to lower frequencies.
[0009]
The above and further aspects of the present invention will be explained in more detail below with reference to the drawings of a switching device according to the present invention.
BEST MODE FOR CARRYING OUT THE INVENTION
[0010]
A switching device according to the invention for activating at least one LED is shown in FIG.
Input terminals 1 and 2 connected to the power supply,
Output terminals 3, 4 connecting to the LED to be activated;
A first series circuit I between each one of the input terminals and one of the output terminals 3, including at least a self-inductance L, a capacitor C and a diode D;
A second series circuit II between the input terminals 1 and 2, including a switching element S that is alternately switched between a conducting state and a non-conducting state at least at a self-inductance L and a high frequency,
A third series circuit III between the output terminals 3 and 4, including at least a diode D and an induction winding SW. Further, a buffer capacitor CB is arranged between the output terminals 3 and 4.
[0011]
The induction winding forms a secondary winding SW of a transformer T having a primary winding PW forming part of both the first and second series circuits. The connection point between the switching element S and the primary winding PW forms the drain d of the switching element S.
[0012]
In an advantageous embodiment, the bypass capacitor BYC is arranged between the input terminals 1 and 2.
[0013]
In a variant of the switching device according to the invention shown in FIG. 2, the secondary winding is constituted by a first winding SW1 and a second winding SW2, the second winding being incorporated in a first series circuit I. And has a connection point VB with the first winding SW1. Preferably, the second winding SW2 is connected directly to one of said output terminals by a snubber circuit 5. The snubber circuit 5 provides, in particular, a reduction in the voltage peaks that occur when the switching element S is switched off. This helps to achieve a further reduction in the generation of interference signals, and has surprisingly only negligible effect on the power transfer of the induction winding.
[0014]
The practical embodiment of the switching device according to the invention depicted in FIG. 2 is particularly suitable for being operated on a 110 V, 60 Hz supply. Said switching device is suitable, for example, for operating an LED array forming part of a traffic light. The array actually used is, for example, of the type GR690053224 made by Lumileds Lighting with 18 LEDs, said LEDs emitting green light. The switching device is capable of supplying a controlled current to the array during operation, particularly ranging from 300 mA to 1.1 A depending on the temperature of the array.
[0015]
In the switching device, the self-inductance has a value L1 of about 3900 μH, the capacitor C has a capacitance C3 of 47 nF, and the secondary winding SW2 of the transformer T has a self-inductance Ls of 120 μH. . The turn ratio between the primary winding PW and the secondary winding SW is 1: 1. The primary winding and the secondary winding have 62 and 56 turns, respectively. The first winding SW1 and the second winding SW2 of the secondary winding each have 28 turns and a self-inductance of 50 μH. Buffer capacitor CB has a value of 330 μH. The switching element S is configured by a MOSFET type IRF730 made by an International Rectifier. The value of the bypass capacitor BYC is 100 nF.
[0016]
If the array connected as described above is operated at a rectified sinusoidal voltage of 110 V, the switching element will provide a zero crossing of the power supply at high frequencies varying between 50 kHz and up to 160 kHz. During that time it is alternately switched to a conductive and non-conductive state.
[0017]
FIG. 3A shows a current and voltage diagram of the practical switching device described above, with the horizontal axis forming the time axis. The switching device is supplied with a DC voltage of 120V. A curve 100 shows a voltage trend at the position of the drain d of the MOSFET forming the switching element S. The current flowing through the position of the drain d is shown in a graph 101.
[0018]
By comparison, FIG. 3B shows a current and voltage diagram of a switching device having only one induction winding made exactly like the induction winding shown in FIG. 3A. In the figure, curves 200 and 201 show the voltage trend at the drain location and the current trend at the drain location, respectively.
[0019]
The division δ of each switching period of the switching element in which the switching element is switched to the non-conductive state is 7 μs. A comparison between the curves 101 and 201 shows that the change in the current value has been reduced from 87 mA for curve 201 to 17 mA for the switching device according to the invention. Furthermore, it is clear that the high-frequency ripples that occur during the periodic switching of the switching element to the non-conducting state have been significantly reduced in magnitude with the switching device according to the invention. In this way, the generation of high-frequency signals across the self-inductance is substantially totally prevented as a result of the high-frequency switching of the switching element, so that the generation of EMI is greatly reduced.
[Brief description of the drawings]
[0020]
FIG. 1 shows a diagram of a switching device according to the invention.
FIG. 2 shows a variant of the switching device as shown in FIG.
FIG. 3A shows a current and voltage diagram of a switching device according to the present invention.
FIG. 3B shows a current and voltage diagram of a switching device not according to the invention.

Claims (4)

少なくとも１つのＬＥＤを作動させるスイッチング装置であり、
供給電源に接続する入力端子と、
作動されるべき前記ＬＥＤに接続する出力端子と、
少なくとも自己インダクタンス、キャパシタ、及びダイオードを含む前記入力端子の１つと前記出力端子の１つとの間の第１直列回路と、
少なくとも前記自己インダクタンス及び高周波数において導通状態及び非導通状態に交互に切り替えられるスイッチング素子を含む前記入力端子間の第２直列回路と、
少なくとも前記ダイオード及び誘導巻線を含む前記出力端子間の第３直列回路と、
を備えたスイッチング装置であって、
前記誘導巻線が前記第１及び第２直列回路の両方の一部を形成する一次巻線を持つ変圧器の二次巻線を形成することを特徴とするスイッチング装置。A switching device for activating at least one LED,
An input terminal connected to the power supply,
An output terminal connected to the LED to be activated;
A first series circuit between one of the input terminals and one of the output terminals, including at least a self-inductance, a capacitor, and a diode;
A second series circuit between the input terminals including a switching element that is alternately switched between a conducting state and a non-conducting state at least at the self-inductance and a high frequency;
A third series circuit between the output terminals including at least the diode and the induction winding;
A switching device comprising:
A switching device, wherein the induction winding forms a secondary winding of a transformer having a primary winding forming part of both the first and second series circuits. バイパスキャパシタが前記入力端子間に配置されることを特徴とする、請求項１に記載のスイッチング装置。The switching device according to claim 1, wherein a bypass capacitor is arranged between the input terminals. 前記装置が、
2π[(L1+Ls)C3]1/2＞δ
の関係によって構成され、ここで、
L1は、H単位での前記自己インダクタンスの大きさであり、
Lsは、H単位での前記二次巻線の自己インダクタンスの大きさであり、
C3は、F単位での前記キャパシタの静電容量であり、
δは、前記スイッチング素子が非導通状態に切り替えられる前記スイッチング素子の各スイッチング期間の秒単位での分割である、
ことを特徴とする、請求項１又は２に記載のスイッチング装置。Said device,
2π [(L1 + Ls) C3] 1/2 > δ
, Where
L1 is the magnitude of the self-inductance in H units,
Ls is the magnitude of the self-inductance of the secondary winding in H units,
C3 is the capacitance of the capacitor in F units,
δ is a division in seconds of each switching period of the switching element in which the switching element is switched to a non-conductive state,
The switching device according to claim 1, wherein: 前記二次巻線が、第１巻線及び第２巻線により構成され、前記第２巻線は、前記第１直列回路に組み込まれ、また、前記第１巻線との接続点を持つことを特徴とする、請求項１又は２に記載のスイッチング装置。The secondary winding is configured by a first winding and a second winding, and the second winding is incorporated in the first series circuit, and has a connection point with the first winding. The switching device according to claim 1, wherein:
JP2003514857A 2001-07-19 2002-07-18 LED switching device Abandoned JP2004536434A (en)

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