JP2004505427A - Flat panel display protection structure - Google Patents

Abstract

The protective faceplate structure (900) includes a faceplate (100) and a barrier layer of silica (902). The face plate (100) can be formed from soda glass, and the barrier layer (902) can be formed from silica.

Description

[0001]
(Cross reference with related applications)
This application is a continuation-in-part of co-pending U.S. patent application Ser.
[0002]
(Field)
The present disclosure relates to the field of flat panel displays. In particular, the present disclosure relates to a "black matrix" of the screen structure of a flat panel display. In one example, a protected substrate structure for a field emission display device is disclosed.
[0003]
(Background technology)
Sub-pixel areas on the faceplate of a flat panel display are generally separated from one another by an opaque mesh-like structure commonly referred to as a matrix or "black matrix". The black matrix prevents some of the electrons directed to one subpixel from overlapping another subpixel by separating the subpixel regions from each other. By doing so, the conventional black matrix contributes to maintaining the color purity of the flat panel display. Black matrices are also used as a base on which structures, such as support walls, are placed. Further, when the black matrix is a three-dimensional matrix (ie, the black matrix extends higher than the surface of the phosphor that emits light), one of the electrons scattered backward from the phosphor of one sub-pixel is reduced. It prevents the part from colliding with another sub-pixel, thereby improving the color purity.
[0004]
A polyimide material can be used to form the matrix. Polyimide materials are known to contain a number of components, such as nitrogen, hydrogen, carbon, oxygen, and the like. While contained within the polyimide material, the above components do not adversely affect the vacuum environment of the flat panel display. Unfortunately, however, conventional polyimide matrices and their components do not always remain inside the polyimide material. That is, under certain conditions, the components of the polyimide and their combinations are released from the polyimide material of the polyimide matrix. As a result, the vacuum environment of the flat panel display is compromised.
[0005]
Contamination by components of the polyimide (or other black matrix material) can occur in various ways. For example, when a conventional polyimide matrix is heat treated or heated, low molecular weight components (fragments, monomers, or atomic groups of monomers) of the polyimide material migrate to the surface of the matrix. These low molecular weight components then migrate from the matrix onto the faceplate. High energy electrons impinging on a faceplate covered with contaminants can cause polymerization of the contaminants. This polymerization forms a dark coating on the faceplate. This dark coating reduces the brightness of the display, thereby degrading the overall performance of the flat panel display.
[0006]
In addition to heat-induced contamination, conventional polyimide matrices are also adversely affected by electron stimulated desorption of contaminants. That is, during operation, the cathode portion of the flat panel display emits electrons toward sub-pixel regions on the faceplate. However, some of these emitted electrons strike the matrix. Electron bombardment of this conventional polyimide matrix results in electron stimulated desorption of contaminants (ie, components or degradation products of the polyimide matrix). These emission contaminants from the polyimide matrix are harmfully introduced into the vacuum environment of flat panel displays. Contaminants released into the vacuum environment can degrade the vacuum environment, in some cases trigger sputtering, and even cover the surface of the field emitter.
[0007]
Furthermore, conventional polyimide matrices are also adversely affected by X-ray stimulated desorption of contaminants. That is, during operation, for example, X-rays (that is, high-energy photons) are generated by electrons that collide with the phosphor. Some of these generated X-rays may strike the matrix. X-ray bombardment of such conventional polyimide matrices results in X-ray stimulated desorption of contaminants (ie, components or degradation products of the polyimide matrix). As mentioned earlier, these emitted contaminants from the polyimide matrix are harmfully introduced into the vacuum environment of flat panel displays. Like the electron-stimulating contaminants, these components can degrade the vacuum environment, possibly trigger sputtering, and even cover the surface of the field emitter.
[0008]
The faceplate of a field emission cathode ray tube requires a conductive anode electrode to carry the current used to illuminate the display. The conductive black matrix structure further provides a potentiostatic surface that reduces the likelihood of electric arcing. Unfortunately, conventional polyimide matrices are not conductive. Therefore, local charging may occur on the surface of the black matrix, and an arc may occur between the cathode and the conventional matrix structure.
[0009]
Thus, there is a need for a matrix structure that does not release gases harmfully when subjected to temperature changes. There is also a need for a matrix structure that meets the above needs and is not adversely affected by unwanted electron or photon stimulated desorption of contaminants. Finally, there is also a need for a matrix structure that achieves the electrical robustness of the faceplate by providing a constant potential surface that satisfies both needs and reduces the likelihood of arcing. Exists.
[0010]
Further, during operation of the field emission display device, electrons are emitted from a field emitter disposed on a cathode portion of the field emission display device. These emitted electrons are then accelerated by the potential field toward the well containing the phosphor (well containing phosphor). When the electrons collide, the phosphor in the phosphor-containing well emits light. Unfortunately, conventional faceplates suffer from the impact of the electrons that eventually strike the faceplate. It is believed that these impact electrons break chemical bonds in the faceplate. When the chemical bond is broken, the face plate absorbs light, which has a detrimental effect on the operation of the field emission display device.
[0011]
Another disadvantage is that the electron bombardment of the faceplate can cause conventional faceplates to release their components as gases. For example, in some applications it is desirable to use inexpensive high sodium glass for the faceplate. However, electron impact on such inexpensive high sodium glass causes unnecessary transfer of contaminants (eg, sodium) from the faceplate to the active area of the field emission display device. Such migration of contaminants can result in harmful contamination of sensitive equipment components (eg, field emitters).
[0012]
In addition to degrading the faceplate, electron bombardment can further degrade the cathode substrate structure of the field emission display device. This deterioration is caused by electron impact by electrons generated from the electron emission structure. The resulting electrons are deflected in some way and impact the cathode substrate structure. As an example of the disadvantages associated with electron bombardment of cathode substrate structures, it is desirable in some applications to use inexpensive high sodium glass for the cathode substrate structure. However, electron impact on such inexpensive high sodium glass causes unnecessary transfer of contaminants (eg, sodium) from the cathode substrate structure to the active area of the field emission display device. Such migration of contaminants can result in harmful contamination of sensitive equipment components (eg, field emitters).
[0013]
Thus, there is a need for a method and apparatus for preventing electron bombardment of a faceplate of a field emission display device and subsequent degradation of the faceplate. There is a further need for a method and apparatus for preventing electron bombardment and subsequent degradation of the cathode substrate structure of a field emission display device. Further, there is a need for a method and apparatus that prevents the transfer of contaminants from a substrate structure (eg, a faceplate or cathode substrate structure) to an active area of a field emission display device.
[0014]
(Summary of the Invention)
The present invention, in one embodiment, provides a method and apparatus for preventing electron bombardment and subsequent degradation of a faceplate of a field emission display device. The present invention further provides, in one embodiment, a method and apparatus for preventing electron bombardment and subsequent degradation of the cathode substrate structure of a field emission display device. The present invention further provides, in one embodiment, a method and apparatus for preventing migration of contaminants from a substrate structure (eg, a faceplate or cathode substrate structure) into an active area of a field emission display device.
[0015]
Specifically, in one embodiment, the present invention provides a faceplate for a field emission display device. The faceplate of this field emission display device is adapted to have phosphor-containing wells located on one side of itself. This embodiment further comprises a barrier layer disposed over the one side of the faceplate adapted to have the phosphor-containing well disposed thereon. The barrier layer of this embodiment is adapted to prevent faceplate degradation. Specifically, the barrier layer of this embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed toward the phosphor-containing well.
[0016]
In another embodiment, the invention includes a cathode substrate structure having a barrier layer disposed thereon. The barrier layer of this embodiment is adapted to prevent degradation of the cathode substrate structure. Specifically, the barrier layer of this embodiment is adapted to prevent degradation of the cathode substrate structure due to electron bombardment by electrons generated from the field emitter of the field emission display device.
[0017]
These and other objects and advantages of the present invention will be apparent to those skilled in the art upon reading the following detailed description of the preferred embodiments illustrated in the various drawings.
[0018]
BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. .
[0019]
It is to be understood that the scale of the drawings referred to in this description is not uniform, unless otherwise indicated.
[0020]
(Description of a preferred embodiment)
Reference will now be made in detail to some preferred embodiments of the invention. The accompanying drawings illustrate these examples. While the invention will be described in connection with these preferred embodiments, it will be understood that they are not intended to limit the invention. On the contrary, the invention covers alternatives, modifications, and equivalents falling within the spirit and scope of the invention as defined by the appended claims. Furthermore, in the following detailed description of the present invention, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that the present invention may be practiced without these details. In other instances, well known methods, procedures, and components have not been described in detail as not to unnecessarily obscure aspects of the present invention.
[0021]
Referring now to FIG. 1A, there is shown the first step used by this embodiment in forming an encapsulated matrix. Specifically, FIG. 1A shows a perspective view of a faceplate 100 of a flat panel display device with a matrix structure 102 coupled thereto. In the embodiment of FIG. 1A, a matrix structure 102 is arranged on a faceplate 100 such that rows and columns of the matrix structure 102 separate adjacent sub-pixel regions, generally indicated at 104. Further, in this embodiment, the matrix structure 102 is formed from a polyimide material. Although in this embodiment the matrix structure 102 is formed from a polyimide material, the present invention is well suited for use with various other matrix forming materials that can cause harmful contamination. As an example, the present invention is well suited for use with a matrix structure consisting of a photosensitive polyimide formulation containing components other than polyimide.
[0022]
Referring still to FIG. Matrix structure 102 is a "multi-level" matrix structure. That is, the row height and the column height of the matrix structure 102 are different. Such a multi-level matrix structure is shown in the embodiment of FIG. 1A to more clearly show the sub-pixel regions 104. The invention is well suited for use with matrix structures that are not multi-level structures. Although the matrix structure of the present invention may be referred to as a black matrix, it should be understood that the term “black” refers to the opaque properties of the matrix structure. That is, the present invention is well suited to having colors other than black. Further, in the following drawings, only a part of the inner surface of the face plate is shown for simplicity. Furthermore, the following discussion refers in particular to a black matrix encapsulated by a contaminant blocking structure. Although such specific descriptions will follow, the present invention is well suited for use with various other physical components of a flat panel display device. Further, while some embodiments of the present invention relate to a matrix structure that defines pixel and / or sub-pixel regions of a flat panel display, the present invention relates to a structure in which pixels and / or sub-pixels define a "matrix" structure. It is well suited for non-embodied embodiments. Thus, for the purposes of this application, the term matrix structure refers to a structure that defines pixels and / or sub-pixels, and does not refer to a particular physical shape of the structure.
[0023]
Referring now to FIG. 1B, there is shown a perspective view of a support structure 150 adapted to be encapsulated by a contaminant blocking structure according to one embodiment of the claimed invention. As will be described in more detail below in connection with embodiments of the matrix structure, in this embodiment the support structure 150 is encapsulated by a contaminant blocking structure. That is, the contaminant blocking structure has a physical structure such that contaminants generated inside the support structure 150 are confined inside the support structure 150 as it is. Thus, the contaminant blocking structure prevents contaminants created inside the support structure 150 from migrating outside the support structure 150. In addition to confining contaminants within the support structure 150, the materials that make up the contaminant blocking structure of the present invention do not emit contaminant gases when struck by electrons emitted from the cathode portion of the flat panel display. Although the support structure 150 is a wall in the embodiment of FIG. 1B, the present invention is also well suited to embodiments where the support structure comprises, for example, pins, balls, columns, or various other support structures.
[0024]
Referring now to FIG. 1C, there is shown a side cross section of a focusing structure 160 adapted to be encapsulated by a contaminant blocking structure according to one embodiment of the claimed invention. As will be described in detail below in connection with a matrix structure embodiment, in this embodiment the focusing structure 160 is encapsulated by a contaminant blocking structure. That is, the contaminant blocking structure has a physical structure such that contaminants generated inside the focusing structure 160 are confined within the focusing structure 160 as they are. Thus, the contaminant blocking structure prevents contaminants created inside the focusing structure 160 from migrating outside the focusing structure 160. In addition to confining contaminants within the focusing structure 160, the materials that make up the contaminant blocking structure of the present invention do not emit contaminant gases when electrons emitted from the cathode portion of the flat panel display collide. Although the focusing structure 160 is a waffle-like structure in the embodiment of FIG. 1C, the present invention is well suited to embodiments where the focusing structure has a different shape.
[0025]
Referring now to FIG. 2, there is shown a side cross-sectional view of the faceplate 100 and the matrix structure 102 taken along line AA of FIG. 1A. For clarity, only a portion of the matrix structure 102 is shown in the cross-sectional side view. However, the following steps are performed on a much larger portion of matrix structure 102, and are not limited to only those portions of matrix structure 102 shown in FIG. In addition, the following steps used in the formation of the present invention are well suited to methods that use a preliminary bakeout step to first remove some of the contaminants from the matrix. In the bakeout step, the polyimide matrix is heated before placing the polyimide matrix in the sealed vacuum environment of the flat panel display.
[0026]
Referring still to FIG. In one embodiment of the present invention, a contaminant blocking structure 106 is disposed over the matrix structure 102. In this embodiment, the contaminant blocking structure 106 comprises a substantially non-porous material layer. That is, the contaminant blocking structure 106 has a physical structure such that contaminants generated inside the matrix structure 102 are confined as is within the matrix structure 102. Thus, the contaminant blocking structure 106 prevents contaminants created inside the matrix structure 102 from migrating outside the matrix structure 102. In addition to contaminating contaminants within the matrix structure 102, the materials that make up the contaminant blocking structure 106 of the present invention do not emit contaminant gas upon impact of electrons emitted from the cathode portion of the flat panel display. .
[0027]
Still referring to FIG. Arrows 108 show the path of contaminants created inside the matrix structure 102. Such contaminants include, for example, N ₂ , H ₂ , CH ₄ , CO, CO ₂ , O ₂ , H ₂ It should be understood that species such as O are included. The contaminant blocking structure 106 prevents the release of contaminants from the matrix structure 102 as indicated by arrow 108.
[0028]
Still referring to FIG. As noted above, in this embodiment, the contaminant blocking structure 106 comprises a substantially non-porous material. In one embodiment, the substantially non-porous material of the contaminant blocking structure 106 is selected from the group consisting of silicon oxide, metal films, inorganic solids, and the like. This embodiment is also well suited for using materials such as aluminum, beryllium, chemical vapor deposited silicon oxide for the non-porous blocking structure 106. Further, the present invention is well suited to embodiments where the material of non-porous blocking structure 106 is a solid material having a melting point greater than about 500 ° C. In one embodiment, a substantially non-porous material is deposited over matrix structure 102 to a thickness of about 50-500 nanometers by means such as chemical vapor deposition (CVD), evaporation, sputtering, and the like. It should be understood, however, that the present invention is well suited for use with a variety of other materials that are substantially non-porous and adapted to entrap contaminants within the matrix structure 102. The present invention is well suited to varying the thickness of the contaminant blocking structure 106 to be greater or less than the thickness ranges described above.
[0029]
Still referring to FIG. In one embodiment of the invention, the contaminant blocking structure 106 has a thickness sufficient to prevent penetration of electrons directed toward the faceplate 100. In one such embodiment, the contaminant blocking structure 106 comprises a layer of silicon dioxide deposited over the matrix 102 to a thickness of about 100-500 nanometers by means such as CVD, evaporation, sputtering, or the like. As a result, such embodiments confine the thermally generated contaminants within or on the surface of the matrix structure 102 and also prevent contaminants from being formed by electron stimulated desorption. That is, this embodiment substantially eliminates the major deleterious conditions associated with electron impact of the matrix structure 102. In one such embodiment in which the contaminant blocking structure prevents the penetration of electrons, the contaminant blocking structure does not hermetically seal the underlying components. In this embodiment, silicon dioxide is particularly mentioned as the material of the barrier layer. However, the present invention (including the above-described embodiments and the following embodiments) uses Al 2 O 3 as the material of the barrier layer. ₂ O ₃ , CrO _x , ZnO, Si ₃ N ₄ , SiO ₂ , TaO ₅ , Tin oxide, ITO, ZrO ₂ , Y ₂ O ₃ , TiO ₂ And MgO, and combinations thereof, are also well suited for use.
[0030]
Next, reference is made to FIG. In this embodiment, a multilayer contaminant blocking structure is disposed over the matrix structure 102. In this embodiment, the multi-layer contaminant blocking structure comprises a plurality of substantially non-porous material layers 106 and 110. That is, the multilayer contaminant blocking structure has a physical structure in which contaminants generated inside the matrix structure 102 are confined within the matrix structure 102 as they are. Thus, this multilayer contaminant blocking structure prevents contaminants created inside the matrix structure 102 from migrating outside the matrix structure 102. In addition to confining contaminants within the matrix structure 102, the layers 106 and 110 that make up the multi-layer contaminant blocking structure of the present invention are capable of providing a contaminant gas even if electrons emitted from the cathode portion of the flat panel display impinge. Does not release.
[0031]
As in the embodiment described above, arrow 108 indicates the path of contaminants created within matrix structure 102. Such contaminants include, for example, N ₂ , H ₂ , CH ₄ , CO, CO ₂ , O ₂ , H ₂ It should be understood that species such as O are included. This multi-layered contaminant blocking structure prevents the release of contaminants from the matrix structure 102 as indicated by arrow 108.
[0032]
Still referring to FIG. As mentioned above, in this embodiment, the multilayer contaminant blocking structure comprises a plurality of substantially non-porous material layers. In one embodiment, at least one substantially non-porous material layer 106 and 110 of the multilayer contaminant blocking structure comprises silicon dioxide; a metal film; an inorganic solid, Al ₂ O ₃ , CrO _x , ZnO, Si ₃ N ₄ , SiO ₂ , TaO ₅ , Tin oxide, ITO, ZrO ₂ , Y ₂ O ₃ , TiO ₂ And MgO, and combinations thereof. This embodiment is also well suited for using materials such as aluminum, beryllium, chemical vapor deposited silicon oxide for at least one of the substantially non-porous material layers 106 and 110. Further, the present invention is also well suited for embodiments in which the material of at least one of the substantially non-porous material layers 106 and 110 comprises a solid material having a melting point greater than about 500 ° C. In one embodiment, at least one layer of material 106 and 110 is deposited over the matrix structure 102 by means such as chemical vapor deposition (CVD), evaporation, sputtering, and the like. In this embodiment, the total thickness of the multilayer contaminant blocking structure is about 50-500 nanometers. It should be understood, however, that the present invention is well suited for use with a variety of other materials that are substantially non-porous and adapted to entrap contaminants within the matrix structure 102. The present invention is well suited to altering the overall thickness of the multilayer contaminant blocking structure to be greater or less than the thickness ranges described above. Further, the present invention is well suited to varying the number of substantially non-porous material layers that comprise the multilayer contaminant blocking structure.
[0033]
In this embodiment, the multilayer contaminant blocking structure has a thickness sufficient to prevent penetration of electrons directed toward faceplate 100. In one such embodiment, the multilayer contaminant blocking structure comprises a layer of silicon dioxide deposited over matrix 102 by CVD to a thickness of about 100-500 nanometers. As a result, such embodiments confine contaminants generated by heat within the matrix structure 102 and further prevent contaminants from being formed by electron stimulated desorption. That is, this embodiment substantially eliminates the major deleterious conditions associated with electron impact of the matrix structure 102.
[0034]
Next, reference is made to FIG. In this embodiment, a contaminant blocking structure 112 is disposed over the matrix structure 102 and the sub-pixel regions 114 of the faceplate 100. In this embodiment, a substantially non-porous material is deposited to a thickness of about 50-500 nanometers over matrix structure 102 and sub-pixel region 114 by means such as chemical vapor deposition (CVD), evaporation, sputtering, and the like. Transparent materials such as silicon dioxide and indium tin oxide. Although the contaminant blocking structure 112 extends into the sub-pixel region 114, the silicon dioxide material present in the sub-pixel region 114 does not adversely affect the formation or operation of the flat panel display. However, the present invention is not limited to the use of various other materials which are substantially non-porous, adapted to confine contaminants within the matrix structure 102 and which do not adversely affect the formation or operation of the flat panel display. It should be understood that it is well-fitted. The present invention is also well suited to varying the thickness of the contaminant blocking structure 112 to be greater or less than the thickness ranges described above.
[0035]
In the embodiment of FIG. 4, the contaminant blocking structure 112 has a thickness sufficient to prevent penetration of electrons directed toward the faceplate 100. Thus, this embodiment, like the previously described embodiments, confine heat generated contaminants within the matrix structure 102 and also prevent the formation of contaminants by electron stimulated desorption. That is, this embodiment substantially eliminates the major deleterious conditions associated with electron impact of the matrix structure 102.
[0036]
Referring now to FIG. 5A, another embodiment of the present invention is shown wherein a conductive coating 116 is disposed over the contaminant blocking structure 106. (This embodiment shows the embodiment of FIG. 2 over which a conductive coating 116 is disposed.) In this embodiment, the conductive coating preferably comprises a low atomic number material. For the purpose of this application, low atomic number material refers to a material consisting of an element having an atomic number less than 18. Further, low atomic number materials reduce electron scattering as compared to high atomic number materials. Specifically, in one embodiment, conductive coating 116 comprises, for example, a CB800A DAG manufactured by Acheson Colloids, Inc. of Port Huron, Michigan. In another embodiment, conductive coating 116 comprises a carbon-based conductive material. In another embodiment, the carbon-based layer of conductive material is applied as a semi-dry spray to reduce shrinkage of the conductive coating 116. In doing so, the present invention can improve control of the final depth of the conductive coating 116. Although such deposition methods have been described above, the present invention is also sufficient to deposit various other conductive coatings over the contaminant blocking structure 106 using various other deposition methods. Please understand that it is compatible. For example, the present invention is well suited for use with aluminum coatings applied by angled evaporation.
[0037]
As described above, physically, the upper surface of the matrix structure 102 is closer to the field emitter than the face plate 100. By applying a conductive coating 116 over the top surface of the matrix structure 102, this embodiment provides a potentiostatic surface. By providing a constant potential surface, this embodiment reduces the potential for potential arcing. As a result, this embodiment helps to ensure that the integrity of the phosphor and the overlying aluminum layer (not yet deposited in the embodiment of FIG. 5A) is maintained. Further, the conductive encapsulation layer can be made thicker or formed from a more conductive material to make the layer more electrically or thermally conductive than the aluminum layer overlying the phosphor. . This allows the encapsulant to prevent local voltage spikes by flowing away the high current of the potential arc and to make it more physically resistant to possible arcs. Further, the conductive coating can be a single layer on a black matrix (as in FIG. 2) and need not be a double layer as shown.
[0038]
Referring now to FIG. 5B, there is shown another embodiment of the present invention in which a conductive coating 116 is disposed over the layers 106 and 110 of the multilayer contaminant containment structure. (This embodiment shows the embodiment of FIG. 3 over which a conductive coating 116 is disposed.) In this embodiment, the conductive coating comprises a low atomic number material, or predominantly a low atomic number element. It is preferably made of a material. For the purpose of this application, low atomic number material refers to a material consisting of an element having an atomic number less than 18. Although such a definition has been given here, this application is also well suited to embodiments where the conductive coating consists of something other than a low atomic number material. Specifically, in one embodiment, conductive coating 116 comprises, for example, a CB800A DAG manufactured by Acheson Colloids, Inc. of Port Huron, Michigan. In another embodiment, conductive coating 116 comprises a carbon-based conductive material. In another embodiment, the carbon-based layer of conductive material is applied as a semi-dry spray to reduce shrinkage of the conductive coating 116. In doing so, the present invention can improve control of the final depth of the conductive coating 116. Although such deposition methods have been described above, the present invention uses various other deposition methods to deposit various other conductive coatings over the layers 106 and 110 of the multi-layer contaminant blocking structure. It should be understood that this is also well suited. For example, the invention is well suited for use with aluminum coatings applied by angle deposition.
[0039]
For the reasons detailed above, this embodiment provides a potentiostatic surface and reduces the likelihood of an electric arc occurring. As a result, this embodiment helps to ensure that the integrity of the phosphor and the overlying aluminum layer (not yet deposited in the embodiment of FIG. 5B) is maintained.
[0040]
Referring now to FIG. 5C, there is shown another embodiment of the present invention in which a conductive coating 116 is disposed over the contaminant blocking structure 112. (This embodiment shows the embodiment of FIG. 4 with a conductive coating 116 disposed thereon.) In this embodiment, the conductive coating preferably comprises a low atomic number material. Specifically, in one embodiment, conductive coating 116 comprises, for example, a CB800A DAG manufactured by Acheson Colloids, Inc. of Port Huron, Michigan. In another embodiment, conductive coating 116 comprises a carbon-based conductive material. In another embodiment, the carbon-based layer of conductive material is applied as a semi-dry spray to reduce shrinkage of the conductive coating 116. In doing so, the present invention can improve control of the final depth of the conductive coating 116. Although such deposition methods have been described above, the present invention is also sufficient to deposit various other conductive coatings over the contaminant blocking structure 112 using various other deposition methods. Please understand that it is compatible. For example, the invention is well suited for use with aluminum coatings applied by angle deposition.
[0041]
For the reasons detailed above, this embodiment provides a potentiostatic surface and reduces the likelihood of an electric arc occurring. As a result, this embodiment helps to ensure that the integrity of the phosphor and the overlying aluminum layer (not yet deposited in the embodiment of FIG. 5C) is maintained.
[0042]
The above embodiments of the present invention provide several significant benefits per se. For example, the present invention eliminates the detrimental browning and outgassing associated with prior art black matrix structures based on polyimides. Furthermore, by preventing the release of contaminants from the matrix structure, the present invention prevents coating of the field emitters with the released contaminants. In addition, by reducing the number and energy of electrons impacting the polyimide, electron desorption of contaminants is reduced. As a result, the present invention extends the life of the field emitter. As an additional advantage, the contaminant blocking structure of the present invention further protects the matrix structure from potential damage and electrical arcing during subsequent processing steps.
[0043]
Referring now to FIG. 6A, a side cross-sectional view of the faceplate 100 and the matrix structure 102 taken along line AA of FIG. 1A is shown. As mentioned above, in this embodiment, the matrix structure 102 is formed from a polyimide material. The present invention is well suited for use with a variety of other matrix-forming materials that can cause harmful contamination. By way of example, the present invention is well suited for use with a matrix structure comprising a photosensitive polyimide formulation containing components other than polyimide. The present invention is also well suited for use with various other physical components, such as, for example, support and / or focusing structures.
[0044]
Still referring to FIG. In this embodiment of the invention, a contaminant blocking structure 602 is disposed over the matrix structure 102 and the sub-pixel region 114 of the faceplate 100. Although the contaminant blocking structure 602 extends into the sub-pixel or pixel area 114, the porous or non-porous transparent material present in the sub-pixel or pixel area 114 is disadvantageous for forming or operating a flat panel display. Has no significant effect. However, it should be understood that the present invention is well suited to embodiments in which the porous material of the contaminant blocking structure 602 does not extend into the sub-pixel region 114. In this embodiment, the contaminant blocking structure 602 comprises a porous material layer. In this embodiment, the porous material comprising the contaminant blocking structure 602 prevents electrons and X-rays generated inside the flat panel display from colliding with the matrix structure 102. Further, the material constituting the contaminant blocking structure 602 of the present invention does not emit a contaminant gas even when electrons and X-rays generated inside the flat panel display collide. Such contaminants include, for example, N ₂ , H ₂ , CH ₄ , CO, CO ₂ , O ₂ , H ₂ It should be understood that species such as O are included.
[0045]
Still referring to FIG. As noted above, in this embodiment, the contaminant blocking structure 602 comprises a porous material. In one embodiment, the porous material of the contaminant blocking structure 602 is selected from the group consisting of colloidal silica; silicon oxide; and chemical vapor deposited silicon oxide. However, it should be understood that the present invention is well suited for use with various other porous materials, such as, for example, silicon, oxides, nitrides, carbides, diamonds, and the like. Further, the present invention is well suited to embodiments where the material of the porous contaminant blocking structure 602 is a solid material having a melting point greater than about 500 ° C.
[0046]
Still referring to FIG. In one embodiment, the porous material is silicon dioxide deposited by atmospheric pressure physical vapor deposition (APPPVD) over matrix structure 102 to a thickness of about 30-1,000 nanometers. However, the present invention is well suited to the use of various other porous materials adapted to prevent electron and / or x-ray penetration by electrons and / or x-rays generated inside a flat panel display. I want to be understood. The invention is also well suited for embodiments in which the porous material layer is applied by, for example, sputtering, e-beam evaporation, thermal spraying, dip coating, and the like. The present invention is well suited to varying the thickness of the contaminant blocking structure 602 to be greater or less than the thickness ranges described above. Specifically, at 6 keV, the majority of electrons do not penetrate into silicon dioxide deeper than 600 nanometers. At 10 keV, the majority of electrons do not penetrate into silicon dioxide deeper than 1,000 nanometers. Thus, in this embodiment, the depth of the porous material comprising the contaminant blocking structure 602 ensures that the matrix structure 102 is not impacted by electrons and / or X-rays generated inside the flat panel display. Is adjusted as follows.
[0047]
Next, FIG. 6B is referred to. In this embodiment, a multilayer contaminant blocking structure is disposed over the matrix structure 102. In this embodiment, the multi-layer contaminant blocking structure comprises a plurality of porous material layers 602 and 604. Similar to the embodiment of FIG. 6A, this embodiment prevents electrons and X-rays generated inside the flat panel display from impinging on the matrix structure 102. Further, the material constituting the contaminant blocking structure of the present invention does not emit a contaminant gas even when electrons and X-rays generated inside the flat panel display collide.
[0048]
Still referring to FIG. As noted above, in this embodiment, the multilayer contaminant blocking structure comprises a plurality of layers of porous material. In one embodiment, at least one porous material layer 602 and 604 of the multi-layer contaminant blocking structure is selected from the group consisting of colloidal silica; silicon oxide; and chemical vapor deposited silicon oxide. However, it should be understood that the present invention is well suited for use with various other porous materials, such as, for example, silicon, oxides, nitrides, carbides, graphite, aluminum, diamond, and the like. Further, the present invention is well suited to embodiments where at least one porous material layer 602 and 604 is a solid layer having a melting point greater than about 500 ° C.
[0049]
Still referring to FIG. In one embodiment, the porous material of at least one of the porous material layers 602 and 604 has been deposited over the matrix structure 102 to a thickness of about 30 to 1,000 nanometers by atmospheric pressure physical vapor deposition (APPPVD). Silicon dioxide. However, the present invention is well suited to the use of various other porous materials adapted to prevent electron and / or x-ray penetration by electrons and / or x-rays generated inside a flat panel display. I want to be understood. The invention is also well suited for embodiments in which the porous material layer is applied by, for example, sputtering, e-beam evaporation, thermal spraying, dip coating, and the like. The present invention is well suited to varying the thickness of the contaminant blocking structure to be greater or less than the thickness ranges described above. In this embodiment, the total depth of the porous material layers 602 and 604 constituting the contaminant blocking structure is such that the matrix structure 102 is not impacted by electrons and / or X-rays generated inside the flat panel display. Is adjusted so that is guaranteed.
[0050]
Referring now to FIG. 6C, there is shown another embodiment of the present invention where a conductive coating 606 is disposed over the contaminant blocking structure. This embodiment shows the embodiment of FIG. 6B with a conductive coating 606 disposed over it. However, the present invention is well suited to embodiments where the conductive coating 606 is disposed, for example, over the embodiment of FIG. 6A. In this embodiment, the conductive coating preferably comprises a low atomic number material. Specifically, in one embodiment, conductive coating 606 comprises, for example, a CB800A DAG manufactured by Acheson Colloids of Port Huron, Michigan. In another embodiment, conductive coating 606 comprises a carbon-based conductive material. In another embodiment, the carbon-based layer of conductive material is applied as a semi-dry spray to reduce shrinkage of conductive coating 606. In doing so, the present invention can improve control of the final depth of the conductive coating 606. Although such deposition methods have been described above, the present invention relates to depositing various other conductive coatings (e.g., aluminum) over the contaminant blocking structure using various other deposition methods. It should also be understood that this is well suited. Further, in this embodiment, the conductive coating 606 is applied to a depth of 100-500 nanometers.
[0051]
For the reasons detailed above, this embodiment provides a potentiostatic surface and reduces the likelihood of an electric arc occurring. As a result, this embodiment helps to ensure that the integrity of the phosphor and the overlying aluminum layer (not yet deposited in the embodiment of FIG. 6C) is maintained.
[0052]
Next, refer to FIG. 7A. In this embodiment, a multilayer contaminant blocking structure is disposed over the matrix structure 102. In this embodiment, the multilayer contaminant containment structure comprises a plurality of layers 702 and 704. In this embodiment, layer 702 comprises a porous material and layer 704 comprises a layer of a substantially non-porous material. Similar to the embodiment of FIG. 6A, this embodiment prevents electrons and X-rays generated inside the flat panel display from impinging on the matrix structure 102. This embodiment further traps heat generated contaminants within the matrix structure 102. Further, the material constituting the contaminant blocking structure of the present invention does not emit a contaminant gas even when electrons and X-rays generated inside the flat panel display collide.
[0053]
Still referring to FIG. 7A. As noted above, in this embodiment, the multilayer contaminant blocking structure comprises a plurality of material layers. In one embodiment, the porous material 702 of the multilayer contaminant-blocking structure is selected from the group consisting of colloidal silica; silicon oxide; and chemical vapor deposited silicon oxide. However, it should be understood that the present invention is well suited for use with various other porous materials, such as, for example, silicon, oxides, nitrides, carbides, diamonds, and the like. Further, the present invention is well suited to embodiments where at least one material layer 702 and 704 is a solid layer having a melting point greater than about 500 ° C.
[0054]
Still referring to FIG. 7A. In one embodiment, the plurality of material layers are defined as follows. Layer 702 comprises an indium tin oxide layer deposited at a depth of about 100-1,000 nanometers. Layer 704 comprises silicon oxide deposited over matrix structure 102 to a thickness of about 30 to 1,000 nanometers. It should be understood, however, that the present invention is well suited for use with various other porous and non-porous materials. The invention is also well suited for embodiments in which the porous material layer is applied by, for example, sputtering, e-beam evaporation, thermal spraying, dip coating, and the like. The present invention is well suited to varying the thickness of the contaminant blocking structure to be greater or less than the thickness ranges described above. In this embodiment, the total depth of the material layers 702 and 704 comprising the contaminant blocking structure ensures that the matrix structure 102 is not impacted by electrons and / or X-rays generated inside the flat panel display. Adjusted to be.
[0055]
Referring now to FIG. 7B, there is shown another embodiment of the present invention where a conductive coating 706 is disposed over the contaminant blocking structure. This embodiment shows the embodiment of FIG. 7A with a conductive coating 706 disposed thereon. Specifically, in such embodiments, layer 702 comprises an indium tin oxide layer deposited to a depth of about 100-1,000 nanometers. Layer 704 comprises silicon oxide deposited over matrix structure 102 to a thickness of about 30 to 1,000 nanometers. Layer 706 in this embodiment comprises an aluminum layer deposited to a depth of about 30-200 nanometers. In this embodiment, the conductive coating preferably comprises a low atomic number material. Specifically, in one embodiment, the conductive coating 706 comprises, for example, a CB800A DAG manufactured by Acheson Colloids of Port Huron, Michigan. In another embodiment, conductive coating 706 comprises a carbon-based conductive material. In another embodiment, the carbon-based conductive material layer is applied as a semi-dry spray to reduce shrinkage of the conductive coating 706. In doing so, the present invention can improve control of the final depth of the conductive coating 706. Although such deposition methods have been described above, the present invention relates to depositing various other conductive coatings (e.g., aluminum) over the contaminant blocking structure using various other deposition methods. It should also be understood that this is well suited.
[0056]
Still referring to FIG. In this embodiment, the contaminant structure consists of two different material layers 702 and 704. However, in other embodiments, the contaminant blocking structure comprises a layer of porous material (eg, silicon oxide layer 704) impregnated with a non-porous material (eg, indium tin oxide of layer 702). That is, the present invention is well suited to embodiments in which a substantially porous material layer is impregnated with a substantially non-porous material. In one such embodiment, a substantially porous layer of material is deposited as described in detail above. Further, a substantially non-porous material is impregnated into the substantially porous material layer, for example, by sputtering, physical vapor deposition, or the like. Furthermore, this embodiment is well suited to placing a conductive coating over the structure as described in detail above.
[0057]
Referring now to FIG. 8, a side cross-sectional view of the faceplate 100 and the matrix structure 102 taken along line AA of FIG. 1A is shown. As mentioned above, in this embodiment, the matrix structure 102 is formed from a polyimide material. The present invention is well suited for use with a variety of other matrix-forming materials that can cause harmful contamination. By way of example, the present invention is well suited for use with a matrix structure comprising a photosensitive polyimide formulation containing components other than polyimide. The present invention is also well suited for use with various other physical components, such as, for example, support and / or focusing structures. In this embodiment, a contaminant blocking structure 802 is located above the matrix structure 102 and within the sub-pixel region 114. The contaminant blocking structure 802 further includes a selective light absorbing component generally indicated at 804 (eg, a dye or pigment). In one such embodiment, the contaminant blocking structure 802 comprises silicon oxide doped with a dye / pigment material. In this way, this embodiment provides a color filter that increases the contrast of the display by reducing the reflected ambient light. Further, this embodiment is well suited for placing dye / pigment only in the contaminant blocking structure 802 above the sub-pixel area 114. This embodiment is also well suited for disposing dye / pigment throughout the contaminant blocking structure 802.
[0058]
For the reasons detailed above, this embodiment provides a potentiostatic surface and reduces the likelihood of an electric arc occurring. As a result, this embodiment helps to ensure that the integrity of the phosphor and the overlying aluminum layer (not yet deposited in the embodiment of FIG. 7B) is maintained.
[0059]
Thus, in one embodiment, the present invention provides a matrix structure that does not release gases harmfully when subjected to temperature changes. The present invention further provides embodiments wherein the matrix structure satisfies the needs described above and reduces unnecessary electron-stimulated desorption of contaminants. Finally, in another embodiment, the present invention provides a matrix structure that achieves both the above needs and achieves the electrical robustness of the faceplate by providing a constant potential surface that reduces the likelihood of arcing. provide. Further, it should be understood that the conductive matrix structure of the present invention is applicable to many types of flat panel displays.
[0060]
Referring now to FIG. 9, a side cross-sectional view of a protective faceplate structure 900 of a field emission display device is shown. In this embodiment, the face plate 100 has a barrier layer 902 disposed over one side thereof. In this embodiment, the matrix structure 102 defines a phosphor-containing well (also referred to as a sub-pixel region), shown as a region 114. In operation, electrons are emitted from a field emitter located on the cathode portion (not shown) of the field emission display device. These emitted electrons are then accelerated by the potential field toward the phosphor-containing well 114. When the electrons collide, the phosphor in the phosphor-containing well 114 emits light. As described above, the conventional faceplate is subject to deterioration when electrons collide. However, in this embodiment, the barrier layer 902 prevents degradation of the faceplate 100 due to electron impact (discussed in more detail below).
[0061]
Still referring to FIG. In this embodiment, the barrier layer 902 comprises a substantially transparent material that is less susceptible to electron damage. In this embodiment, a barrier layer 902 is deposited over the faceplate 100 as one of the initial process steps performed in forming a field emission display device. That is, the barrier layer 902 of this embodiment is disposed on the face plate 100 before the formation of the matrix 102 and the formation of the phosphor-containing well 114. Although this embodiment specifically mentions such an order of formation, the present invention is well suited to altering the order in which the barrier layer and various other features of the field emission display are fabricated.
[0062]
Still referring to FIG. In one embodiment, barrier layer 902 has a thickness sufficient to prevent significant penetration of electrons through barrier layer 902 so that the electrons do not strike faceplate 100. Specifically, in one embodiment, barrier layer 902 comprises silicon dioxide about 100 nanometers thick. Although this embodiment lists such specific material types and material thicknesses, the present invention contemplates the use of various other materials and / or materials of various thicknesses (eg, thicker materials or thinner materials). Material). Further, in this embodiment, the combination of one or more materials and their thickness provides a barrier layer that does not significantly reduce light transmitted through the faceplate and protects the faceplate from degradation due to electron impact. You.
[0063]
Referring still to FIG. In one embodiment, in addition to preventing significant collision of electrons with faceplate 100, barrier layer 902 prevents the transfer of contaminants from faceplate 100 into the field emission display device. As a result, the faceplate 100 is no longer a potentially significant source of contaminants that can damage sensitive features of the field emission display device. Thus, barrier layer 902 allows the use of a desirable inexpensive high sodium glass substrate as faceplate 100. Unlike conventional field emission displays, in which the sodium of the high sodium glass often moves to the active area of the field emission display device (by electron bombardment), this embodiment provides for the removal of the face plate 100 from the faceplate 100 into the field emission display device. Prevent sodium migration. In other embodiments, in addition to preventing significant collisions of electrons against faceplate 100 and preventing migration of contaminants from faceplate 100 into the field emission display device, barrier layer 902 may be electrically conductive. is there. In this manner, extra charges can be removed from the face plate 100 using the barrier layer 902.
[0064]
Referring now to FIG. 10, a side cross-sectional view of a protective cathode substrate structure 1000 of a field emission display device is shown. In this embodiment, a cathode substrate 1001 has a barrier layer 1002 disposed over one side thereof. In this embodiment, a field emitter, indicated generally at 1004, is shown disposed on the cathode substrate 1001 between the focusing structures 160. In operation, electrons are emitted from field emitter 1004. These emitted electrons are then accelerated by a potential field toward a phosphor-containing well (not shown). When the electrons collide, the phosphor in the phosphor-containing well emits light. As described above, when the electrons collide, the conventional cathode substrate is deteriorated. The electrons impinge on the cathode substrate by, for example, scattering. However, in this embodiment, the barrier layer 1002 prevents the cathode substrate 1001 from deteriorating due to electron impact (this will be discussed in detail later).
[0065]
Still referring to FIG. In this embodiment, the barrier layer 1002 comprises a substantially transparent material that is less susceptible to electron damage. In this embodiment, a barrier layer 1002 is deposited over the cathode substrate 1001 as one of the initial process steps performed in forming a field emission display device. That is, the barrier layer 1002 of this embodiment is disposed on the cathode substrate 1001 before the formation of the matrix field emitter 1004 and the formation of the focusing structure 160. Although this embodiment specifically mentions such an order of formation, the present invention is well suited to altering the order in which the barrier layer and various other features of the field emission display are fabricated.
[0066]
Still referring to FIG. In one embodiment, barrier layer 1002 has a thickness sufficient to prevent significant penetration of electrons through barrier layer 1002 so that the electrons do not strike cathode substrate 1001. Specifically, in one embodiment, barrier layer 1002 comprises silicon dioxide about 100 nanometers thick. Although this embodiment lists such specific material types and material thicknesses, the present invention contemplates the use of various other materials and / or materials of various thicknesses (eg, thicker materials or thinner materials). Material).
[0067]
Still referring to FIG. In one embodiment, in addition to preventing significant collision of electrons with the cathode substrate 1001, the barrier layer 1002 prevents migration of contaminants from the cathode substrate 1001 into the field emission display device. As a result, the cathode substrate 1001 is no longer a potentially significant source of contaminants that can damage sensitive features of the field emission display device. Thus, barrier layer 1002 allows the use of a desirable inexpensive high sodium glass substrate as cathode substrate 1001. Unlike conventional field emission displays, in which the sodium of the high sodium glass often moves to the active area of the field emission display device (by electron bombardment), this embodiment allows the cathode substrate 1001 to enter the field emission display device. Prevent sodium migration. In other embodiments, in addition to preventing significant collisions of electrons with the cathode substrate 1001 and preventing migration of contaminants from the cathode substrate 1001 into the field emission display device, the barrier layer 1002 is conductive. . By doing so, extra charges can be removed from the cathode substrate 1001 using the barrier layer 1002.
[0068]
Referring to FIG. 11, a flowchart 1100 of steps performed in accordance with one embodiment of the present invention is shown. As described above with reference to FIGS. 9 and 10, this embodiment provides a method for protecting a substrate structure of a field emission display device. In particular, in one embodiment, the present invention includes providing 1102 a substrate structure of a field emission display device. Such a substrate structure includes, for example, the face plate 100 of FIG. 9 or the cathode substrate 1001 of FIG. Further, in one embodiment, the present invention enables the use of a high sodium glass substrate structure in a field emission display device.
[0069]
Next, in step 1104, in this embodiment, a barrier layer adapted to prevent degradation of the substrate structure due to electron bombardment is disposed over the substrate structure. As noted above, in one embodiment, the barrier layer 1002 has a thickness sufficient to prevent significant penetration of electrons through the barrier layer (eg, 100 nanometers) and is substantially less susceptible to electron damage. Transparent material (eg, silicon dioxide, Al ₂ O ₃ , CrO _x , ZnO, Si ₃ N ₄ , SiO ₂ , TaO ₅ , Tin oxide, ITO, ZrO ₂ , Y ₂ O ₃ , TiO ₂ And MgO, and combinations thereof). Further, in one embodiment, the barrier layer prevents migration of contaminants from the substrate into the active area. In other embodiments, the barrier layer is conductive so that the barrier layer can be used to remove excess charge from the substrate structure.
[0070]
The foregoing description of certain embodiments of the invention is for purposes of illustration and description. The description is not intended to completely describe the invention or to limit the invention to the form disclosed. Many modifications and variations are possible in light of the above teaching. These embodiments best explain the principles of the invention and its practical application, so that those skilled in the art can make various modifications and adaptations of the invention and various embodiments to the particular application contemplated. Selected and described to be the best available. The scope of the invention is defined by the claims appended hereto and their equivalents.
[Brief description of the drawings]
FIG. 1A
1 is a perspective view of a face plate of a flat panel display device according to one embodiment of the claimed invention. The face plate has a matrix structure disposed thereon.
FIG. 1B
1 is a perspective view of a support structure for a flat panel display device according to one embodiment of the claimed invention. This support structure is encapsulated.
FIG. 1C
1 is a side sectional view of a focusing structure of a flat panel display device according to one embodiment of the claimed invention. This focusing structure is encapsulated.
FIG. 2
FIG. 1B is a side cross-sectional view of the faceplate and matrix structure of FIG. 1A taken along line AA, according to one embodiment of the claimed invention. The matrix structure has a contaminant blocking structure disposed thereon.
FIG. 3
FIG. 1B is a side cross-sectional view of the faceplate and matrix structure of FIG. 1A taken along line AA, according to one embodiment of the claimed invention. The matrix structure has a multilayer contaminant blocking structure disposed thereon.
FIG. 4
1 is a side sectional view of a contaminant blocking structure according to one embodiment of the claimed invention.
The contaminant blocking structure is disposed over the matrix structure and the sub-pixel region of the faceplate.
FIG. 5A
FIG. 3 is a side sectional view of the faceplate and matrix structure of FIG. 2 according to one embodiment of the claimed invention. The matrix structure has a conductive coating disposed thereon.
FIG. 5B
FIG. 4 is a side sectional view of the faceplate and matrix structure of FIG. 3 according to one embodiment of the claimed invention. The matrix structure has a conductive coating disposed thereon.
FIG. 5C
FIG. 5 is a side sectional view of the faceplate and matrix structure of FIG. 4 according to one embodiment of the claimed invention. The matrix structure has a conductive coating disposed thereon.
FIG. 6A
FIG. 1B is a side cross-sectional view of the faceplate and matrix structure of FIG. 1A taken along line AA, according to one embodiment of the claimed invention. The matrix structure has a contaminant-blocking structure disposed over it and made of a porous material.
FIG. 6B
FIG. 1B is a side cross-sectional view of the faceplate and matrix structure of FIG. 1A taken along line AA, according to one embodiment of the claimed invention. The matrix structure has a contaminant-blocking structure overlying the layer of porous material.
FIG. 6C
FIG. 6B is a side cross-sectional view of the faceplate and matrix structure of FIG. 6B according to one embodiment of the claimed invention. The matrix structure has a conductive coating disposed thereon.
FIG. 7A
FIG. 1B is a side cross-sectional view of the faceplate and matrix structure of FIG. 1A taken along line AA, according to one embodiment of the claimed invention. The matrix structure has a contaminant blocking structure overlying a layer of porous and non-porous material.
FIG. 7B
FIG. 7B is a side cross-sectional view of the faceplate and matrix structure of FIG. 7A, according to one embodiment of the claimed invention. The matrix structure has a conductive coating disposed thereon.
FIG. 8
1 is a side sectional view of a face plate and a matrix structure according to one embodiment of the claimed invention. This matrix structure has a contaminant blocking structure disposed over it, containing a dye / pigment.
FIG. 9
1 is a side sectional view of a protective faceplate structure according to one embodiment of the claimed invention. A faceplate having a barrier layer disposed thereover is shown.
FIG. 10
1 is a side sectional view of a protective cathode substrate structure according to one embodiment of the claimed invention. A cathode substrate having a barrier layer disposed thereon is shown.
FIG. 11
5 is a flowchart of steps performed to provide a protective substrate structure according to one embodiment of the claimed invention.

Claims (27)

A protective faceplate structure for a field emission display device,
a) faceplate means of a field emission display device, the faceplate means being suitable for having a phosphor-containing well disposed on one side thereof;
b) a barrier layer disposed over the one side of the face plate, the barrier layer being suitable for preventing the face plate from deteriorating due to electron impact by electrons guided toward the phosphor-containing well; A protective face plate structure comprising a barrier layer. A protective cathode substrate structure of a field emission display device,
a) cathode substrate means of a field emission display device, the cathode substrate means being suitable for having an electron emission structure disposed on one side thereof;
b) a barrier layer disposed over the one side of the cathode substrate, the barrier layer being suitable for preventing deterioration of the cathode substrate due to electron impact by electrons generated from the electron emission structure. A protective cathode substrate structure comprising: 3. The structure of claim 1 or 2, wherein the barrier layer comprises a substantially transparent material that is less susceptible to electron damage. 3. The structure of claim 1 or 2, wherein the barrier layer has a thickness sufficient to substantially prevent the electrons from penetrating the barrier layer so that the electrons do not strike the means. The barrier layer is made of silicon dioxide, Al ₂ O ₃ , CrO _x , ZnO, Si ₃ N ₄ , SiO ₂ , TaO ₅ , tin oxide, ITO, ZrO ₂ , Y ₂ O ₃ , TiO ₂ and MgO, and The structure according to claim 1 or 2, wherein the structure is selected from the group consisting of: The structure of claim 5, wherein the thickness of the barrier layer is about 100 nanometers. The structure according to claim 1, wherein the barrier layer prevents migration of contaminants from the means into the field emission display device. 4. The structure of claim 3, wherein the barrier layer prevents sodium migration from the means into the field emission display device. The structure according to claim 1, wherein the barrier layer has conductivity. The structure of claim 1, wherein the barrier layer includes a selective light absorbing component. The structure of claim 10, wherein the selective light absorbing component is selected from the group consisting of a dye and a pigment. The structure of claim 10, wherein each sub-pixel of the faceplate includes a different selective light absorbing component. A method for protecting a substrate structure of a field emission display device,
a) providing a substrate structure of the field emission display device;
b) disposing a barrier layer over the substrate structure suitable to prevent degradation of the substrate structure due to electron bombardment. The method for protecting a substrate structure of a field emission display device according to claim 13, wherein the substrate structure includes a face plate of the field emission display device. The method for protecting a substrate structure of a field emission display device according to claim 13, wherein the substrate structure includes a cathode substrate of the field emission display device. 14. The method for protecting a substrate structure of a field emission display device according to claim 13, wherein step a) comprises providing a high sodium glass substrate structure to the field emission display device. 14. The substrate of a field emission display device according to claim 13, wherein step b) comprises disposing the barrier layer of a substantially transparent material that is not susceptible to damage by electrons over the substrate structure. A way to protect the structure. 14. The method of claim 13, wherein step b) comprises disposing the barrier layer over the substrate structure such that the barrier layer has a thickness sufficient to substantially prevent the electrons from penetrating the barrier layer. 3. The method for protecting a substrate structure of a field emission display device according to claim 1. Step b) is silicon _{dioxide, Al 2 O 3, CrO x} , ZnO, Si 3 N 4, SiO 2, TaO 5, tin _{oxide, ITO, ZrO 2, Y 2} O 3, TiO 2, and MgO, and, 20. The method for protecting a substrate structure of a field emission display device according to claim 19, comprising disposing a barrier layer selected from the group consisting of these combinations over the substrate structure. 20. The method for protecting a substrate structure of a field emission display device according to claim 19, wherein step b) includes placing the barrier layer over the substrate structure to a thickness of about 100 nanometers. . 14. The field emission device of claim 13, wherein step b) comprises disposing the barrier layer over the substrate structure to prevent migration of contaminants from the substrate structure into the field emission display device. For protecting the substrate structure of a portable display device. 14. The method of claim 13, wherein step b) comprises arranging the barrier layer over the substrate structure such that the barrier layer prevents migration of sodium from the substrate structure into the field emission display device. A method for protecting a substrate structure of a field emission display device as described. 14. The method for protecting a substrate structure of a field emission display device according to claim 13, wherein step b) includes disposing a conductive barrier layer over the substrate structure. 14. The method for protecting a substrate structure of a field emission display device according to claim 13, wherein the barrier layer includes a selective light absorbing component. The method for protecting a substrate structure of a field emission display device according to claim 24, wherein the selective light absorbing component is selected from the group consisting of a dye and a pigment. The method for protecting a substrate structure of a field emission display device according to claim 24, wherein each sub-pixel of the face plate includes a different selective light absorbing component. A structure according to claim 1 or 2, wherein said means comprises a high sodium glass substrate.

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