JP2004319867A - Laser device, semiconductor laser device, video display unit and laser oscillation method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser device capable of efficiently using a first laser beam. <P>SOLUTION: This laser device is provided with a converter whose first end part inputs a first laser beam having first wavelength, and whose second end part outputs a second laser beam having second wavelength acquired by executing wavelength conversion processing, a first mirror arranged at the first end part of the converter, and equipped with both a first reflecting part having a refractive index for transmitting the first laser beam, and for substantially performing the total reflection of the second laser beam and a second reflecting part having a refractive index for substantially performing the total reflection of the first laser beam and the second laser beam and a second mirror arranged at the end part of the converter, and equipped with a third reflecting part having a refractive index for substantially performing the total reflection of the first laser beam, and for reflecting a portion of the second laser beam with smaller reflectivity than that of the second reflecting part, and for substantially transmitting the residue. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a laser device, and more particularly, to a laser device that performs wavelength conversion processing on laser light output from a laser light output unit and outputs the resulting laser light.
[0002]
[Prior art]
A conventional technique of performing wavelength conversion processing on a first laser beam output from a laser and outputting a second laser beam is to provide a reflection section for reflecting the laser beam at both ends of a fluoride fiber, and to provide a second laser beam in the fiber. Light is made to resonate efficiently. (For example, Patent Document 1).
[0003]
Further, in the conventional technique of performing wavelength conversion processing on laser light output from a laser to output a second laser light, a pair of Bragg gratings is provided at opposite ends of a fiber laser cavity, and a fiber laser cavity is provided. Is doped with two kinds of rare earth dopants. (For example, Patent Document 2).
[0004]
In addition, a conventional technique of performing wavelength conversion processing on laser light output from a laser to output a second laser light is to provide first and second optical fiber mirror sections before and after an optical fiber amplifying element. Laser oscillation is performed by reciprocally reflecting the laser light between them. (For example, Patent Document 3).
[0005]
[Patent Document 1]
JP-A-11-87811 (pages 3-4, FIGS. 1 and 2)
[Patent Document 2]
JP-A-11-501770 (pages 8-17, FIGS. 1, 2, 3, and 4)
[Patent Document 3]
JP-A-7-245439 (page 3-5, FIG. 1)
[0006]
[Problems to be solved by the invention]
The techniques of Patent Document 1, Patent Document 2, and Patent Document 3 are for efficiently resonating the second laser light, and are not techniques for efficiently using the first laser light.
[0007]
[Means for Solving the Problems]
A semiconductor laser device according to the present invention includes: a semiconductor laser that outputs a first laser beam having a first wavelength; a first end and a second end that is opposite to the first end; A converter that receives the first laser light from a first end, performs a wavelength conversion process, and outputs a second laser light having a second wavelength from the second end; A first reflector having a refractive index that is provided at a first end of the first laser beam and that transmits the first laser beam and substantially totally reflects the second laser beam; and A first mirror including both a second reflecting portion having a refractive index for substantially totally reflecting the second laser light, and a first mirror provided at a second end of the converter; Is substantially totally reflected, and a part of the second laser beam is smaller than the second reflecting portion. Reflected by the reflection factor, it is configured to include a second mirror comprising a third reflecting unit including a refractive index that substantially transmits the rest.
[0008]
Further, an image display device according to the present invention includes a semiconductor laser that outputs a first laser beam having a first wavelength, a first end and a second end opposite to the first end, A converter that receives the first laser light from the first end, performs a wavelength conversion process, and outputs a second laser light having a second wavelength from the second end; A first reflector provided at a first end of the converter and having a refractive index that transmits the first laser light and substantially totally reflects the second laser light; and the first laser. A first mirror having both a light and a second reflecting portion having a refractive index for substantially totally reflecting the second laser light, the first mirror being provided at a second end of the converter, The laser beam is substantially totally reflected, and a part of the second laser beam is smaller than the second reflecting portion. A second mirror provided with a third reflecting portion having a refractive index that reflects with a high reflectance and substantially transmits the remainder, an image that receives an image signal, performs image processing on the received image signal, and outputs the processed image signal Processing means, and an image display unit for displaying an image signal subjected to image processing by the image processing means using the second laser light output through the second mirror. Make up.
[0009]
Also, in the semiconductor laser resonance method according to the present invention, a step of outputting a first laser beam having a first wavelength, the output first laser beam is input to a converter, and a wavelength conversion process is performed. Outputting a second laser beam having a second wavelength through the second laser beam, the second laser beam being provided at one end of the converter and substantially totally reflecting the first laser beam. Reflecting the first laser beam by a second mirror including a third reflecting portion having a refractive index smaller than that of the first reflecting portion that reflects a portion and substantially transmits the remainder. A first reflector provided at the other end of the converter, having a refractive index that transmits the first laser light and substantially totally reflects the second laser light; and The laser beam and the second laser beam are substantially totally Reflecting the first laser beam by a first mirror having both of a second reflecting portion having a refractive index that changes, and causing the second laser beam to be reflected by the first mirror and the second mirror. Resonating and outputting.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
As described above, in the conventional semiconductor laser device, the first laser light output from the semiconductor laser 3 is incident on the optical fiber, and the second laser light subjected to the wavelength conversion processing in the optical fiber is efficiently resonated. A technique for causing this to occur has been disclosed.
[0011]
However, in order to further increase the oscillation efficiency, it is necessary to efficiently absorb the first laser light into ions in the optical fiber.
[0012]
An embodiment according to the present invention will be described below with reference to the drawings.
[0013]
FIG. 2 is a diagram illustrating the configuration of an optical fiber used in the semiconductor laser device according to the present invention.
[0014]
Here, a cross section in an optical transmission direction of an optical fiber configured in a cable shape is shown.
[0015]
Reference numeral 1 denotes an optical fiber. Reference numeral 1a denotes a cladding portion, and reference numeral 1b denotes a core portion. The core portion 1b performs an operation of transmitting laser light input from the semiconductor laser, and the cladding portion 1a is configured to wrap the core portion 1b, and performs an operation of returning the laser light spreading out from the core portion 1b to the core portion 1b. Do.
[0016]
FIG. 1 is a diagram illustrating a semiconductor laser device according to the present invention.
[0017]
Reference numeral 3 denotes a semiconductor laser, reference numeral 4 denotes a first laser beam, reference numeral 5 denotes a cylindrical lens, reference numeral 6 denotes a cylindrical lens, reference numeral 7 denotes a condensing lens, reference numeral 12 denotes an end of an input fiber of the first laser light, and reference numeral 13 Is the end of the fiber on the output side of the second laser beam, 14 is the input side mirror (first mirror), 14a is the second reflecting section, 14b is the first reflecting section, and 15 is the output side mirror (first mirror). Reference numeral 30 denotes a semiconductor laser mounting portion.
[0018]
Excitation laser light (first laser light 4) is output from the semiconductor laser 3 provided in the semiconductor laser mounting unit 30 by an excitation operation (not shown).
[0019]
The first laser light 4 output from the semiconductor laser 3 is condensed by a cylindrical lens 5, a cylindrical lens 6, and a condenser lens, the wavelength is adjusted, and the optical fiber 1 passes through an input side mirror (first mirror) 14. To the core unit 1b. As will be described later, in the embodiment of the present invention, the input side mirror (first mirror) 14 is provided with a first reflecting portion 14b, and the first laser beam (laser beam output from the semiconductor laser 3) is provided. , Wavelength λ = 835 nm).
[0020]
Pr3 + and Yb3 + are added to the core 1b of the optical fiber 1, and the optical fiber 1 is composed of a rare earth (fluoride) fiber together with the core 1b and the clad 1a. The laser light (first laser light 4) having a wavelength λ = 835 nm input to the core 1b of the optical fiber 1 is absorbed by the ions added to the core 1b of the optical fiber 1.
[0021]
Thereafter, a wavelength conversion process, that is, up-conversion is performed, and photons having a wavelength λ = 635 nm are emitted from Pr3 +, and a second resonator having a wavelength λ = 635 nm is formed by a resonator formed by mirrors provided on both end surfaces of the optical fiber 1. Is output (converter).
[0022]
Here, the operation of the up-conversion will be described. An input-side mirror (first mirror) 14 is provided on one end 12 (input side) on the side where the first laser light 4 is input to the optical fiber 1 (converter). As described above, since the up-conversion is particularly performed in the core unit 1, the input-side mirror (first mirror) 14 needs to cover at least the core unit 1b.
[0023]
FIG. 3 is a diagram showing an input-side end of an optical fiber used in the semiconductor laser device according to the present invention. Here, a view of the optical fiber 1 viewed from the semiconductor laser 3 is shown.
[0024]
Reference numeral 14b is a first reflection unit, and reference numeral 14a is a second reflection unit. Each of the input-side mirrors (first mirrors) 14 includes a first reflector 14b and a second reflector 14a. The first reflector 14b is provided at an input end (first end) of the core 1b (converter) of the optical fiber 1. The first laser beam (λ = 835 nm) is transmitted, and the second laser beam (λ = 635 nm) has a refractive index (for example, 99% or more) that is substantially totally reflected. Further, the second reflecting portion 14a has a refractive index (for example, 99% or more) that substantially totally reflects both the first laser light (λ = 835 nm) and the second laser light (λ = 635 nm). Is configured.
[0025]
In order to convert the first laser light into the second laser light, it is desirable that the first laser light is not hindered by the first mirror when entering the optical fiber. For this purpose, it is desirable that the optical image position of the first laser light at the incident end of the optical fiber 1 be covered with a first reflecting portion that transmits the first laser light. In addition, the larger the first reflecting portion, the more the light propagates through the inside of the fiber, returns the laser light reaching the end face 12, and decreases the conversion efficiency of the first laser light into the second laser light. It is desirable that the light image has substantially the same size and is located at the same position.
[0026]
Further, the beam shape of the first laser beam 4 emitted from the semiconductor laser is converted by an optical system so as to be optimally incident on the optical fiber 1, but in the conversion by an optical system such as a lens, For each of the first axis direction (reference F) perpendicular to the active layer of the laser and the slow axis direction (reference S) horizontal to the active layer of the semiconductor laser, ((laser image width) × The value of sin (spread angle at the emission end position of the semiconductor laser) is always constant and equal to ((active layer width of the semiconductor laser) × sin (spread angle at the emission end position of the semiconductor laser)). Further, the value of ((active layer width of semiconductor laser) × sin (spread angle at the emission end position of the semiconductor laser)) is larger in the slow axis direction than in the fast axis direction.
[0027]
For this reason, in order that the numerical aperture does not depend on the direction, the incident angle of the first laser beam 4 at the optical fiber incidence end is made the same in the fast axis direction and the slow axis direction in order to enter the substantially uniform optical fiber 1. Then, the image width at the incident end of the optical fiber is larger in the slow axis direction than in the fast axis direction.
[0028]
In the embodiment of the present invention, the shape of the first reflecting portion is made longer in the slow axis direction than in the fast axis direction so as to be the same as the shape of the image of the first laser beam 4 on the incident end face of the optical fiber. It is constituted so that it may become.
[0029]
For this reason, in the embodiment of the present invention, the configuration of the first reflecting portion is configured to be longer in the slow axis direction S than in the fast axis direction F related to the output of the semiconductor laser. With this configuration, it is possible to cope with the spread of the semiconductor laser light.
[0030]
An output side mirror (second mirror) 15 is provided on the other end 13 on the side where the second laser light is output from the optical fiber 1 (converter). Since the up-conversion is output from the core unit 1 as described above, the output side mirror (second mirror) 15 needs to cover at least the core unit 1b.
[0031]
FIG. 4 is a diagram showing an output end of an optical fiber used in the semiconductor laser device according to the present invention. Here, a diagram of the optical fiber 1 as viewed from a direction opposite to the semiconductor laser 3 is shown.
[0032]
Reference numeral 15 denotes an output-side mirror (a second mirror and a third reflecting unit). The output-side mirror (second mirror) 15 is provided on the output-side end (second end) 13 of the core 1 b (converter) of the optical fiber 1. The first laser light (λ = 835 nm) is substantially totally reflected, for example, about 30% of the second laser light (λ = 635 nm) is reflected, and the remaining about 70% is substantially transmitted. It is configured to have a refractive index of
[0033]
The second mirror may have a refractive index of more than 50%, substantially totally reflect the first laser light, partially reflect the second laser light, and substantially reflect the remainder. May be configured to have a refractive index smaller than the refractive index of the first reflecting portion that transmits light.
[0034]
As for the second laser light (λ = 635 nm), a resonator is formed by the first mirror 14 and the second mirror 15 provided at both ends of the optical fiber 1, and the 635 nm laser light is oscillated. Is output.
[0035]
Further, the first laser light 4 (λ = 835 nm) is input into the fiber from the end face 12 of the optical fiber 1 and is absorbed by the above-mentioned added ions while propagating through the core portion 1b, and its intensity gradually increases. Although weakened, the first laser beam 4 reaches the second mirror 15 provided on the end face 13 of the optical fiber 1 before all of the energy of the first laser beam 4 (λ = 835 nm) is absorbed.
[0036]
The first laser beam 4 (λ = 835 nm) is substantially totally reflected by the second mirror 15 attached to the end face 13 of the optical fiber 1. The first laser light 4 (λ = 835 nm) totally reflected propagates from the end face 13 to the end face 12 of the optical fiber, and is gradually absorbed by the added ions in the process, but is not absorbed by the added ions. One laser beam 4 (λ = 835 nm) reaches a first mirror 14 provided on the end face 12 of the optical fiber.
[0037]
As described with reference to FIG. 3, the second reflecting portion 14a of the input-side mirror (first mirror) 14 is configured to substantially totally reflect the first laser light (λ = 835 nm). As described above, the first laser beam 4 (λ = 835 nm) is reflected again by the second reflector 14a, propagates from the end face 12 to the end face 13 of the optical fiber 1, and is absorbed by the added ions. Is done.
[0038]
Further, since the first reflector 14b transmits the first laser light (λ = 835 nm), it is possible to input the first laser light (λ = 835 nm) to the core 1b of the optical fiber 1. Become.
[0039]
In a semiconductor laser, an active layer width and a beam divergence angle in a direction perpendicular to the active layer and in a horizontal direction are greatly different from each other, so that an image at a focal point becomes asymmetric. If the laser beam having the asymmetric optical image is to be incident on a step index type multimode fiber having a substantially circular cross section, the laser beam is incident only from a part of the core 1b of the fiber.
[0040]
However, since the laser beam 4 once incident on the optical fiber 1 is coupled to various modes in the optical fiber 1 and propagates, the laser beam 4 propagates through the core 1 b of the optical fiber 1 and reaches the end face 12. The near-field pattern of the light 4 at the fiber end face is spread over the entire core portion 1b of the fiber.
[0041]
As described above, the size of the image of the laser light 4 on the fiber end face 12 of the light incident on the optical fiber 1 from the semiconductor laser is smaller than the size of the laser light propagating inside the fiber and reaching the end face 12. By attaching a mirror for substantially reflecting the first laser light (wavelength λ = 835 nm) in a region of the core portion 1b of the end face 12 other than where the laser light 4 output from the semiconductor laser passes through the fiber end face 12, A part of the laser light that propagates inside the fiber and reaches the end face 12 can be reflected into the fiber. As a result, the intensity of the first laser light (wavelength λ = 835 nm) absorbed by the ions can be increased, and a high-power laser light of the second laser light (wavelength λ = 635 nm) can be obtained.
[0042]
That is, by forming the second mirror 15 on the end face 13 of the optical fiber 1, the propagation direction of the first laser light (λ = 835 nm) reaching the end face 13 without being absorbed by the added ions of the core portion 1 is changed. It can be propagated again in the optical fiber 1.
[0043]
Further, by configuring the first mirror 14 on the end face 12 of the optical fiber 1, the input of the first laser light (λ = 835 nm) to the optical fiber 1 and the first laser light on the first mirror 14 (Λ = 835 nm). Therefore, the first laser light (λ = 835 nm) can be used efficiently. Therefore, the output of the second laser light (λ = 635 nm) output from the semiconductor laser device can be increased.
[0044]
FIG. 5 is a view for explaining an image display device using the semiconductor laser device according to the present invention.
[0045]
Reference numeral 16R denotes a laser beam output from the semiconductor laser device described above, reference numeral 57R denotes a filter, reference numeral 58R denotes a prism, reference numeral 59R denotes a polarizing plate, reference numeral 60R denotes a liquid crystal display device, and reference numeral 41R denotes a video signal. Here, R indicates Red (red).
[0046]
The laser light 16R output from the semiconductor laser device is subjected to a predetermined filtering process by a filter 57R, and is input to a prism 58R. In the prism 58R, the angle of the laser beam 16R is changed and output to the polarizing plate 59. The polarizing plate 59 changes the phase of the laser light 16R by 45 ° and outputs the same to the liquid crystal display device 60R. A video signal 41R is input to the liquid crystal display device 60R, and a laser beam 16R based on the video signal 41R is output to the polarizing plate 59R. The polarization plate 59 changes the phase of the laser light 16R by 45 °, and the laser light 16R whose phase is changed by 45 ° is input to the prism 58R. The prism 58R outputs the input laser light 16R to the dichroic prism 61.
[0047]
Reference numeral 16G denotes a laser beam output from the semiconductor laser device described above, reference numeral 57G denotes a filter, reference numeral 58G denotes a prism, reference numeral 59G denotes a polarizing plate, reference numeral 60G denotes a liquid crystal display device, and reference numeral 41G denotes a video signal. Here, G indicates Green.
[0048]
The laser beam 16G output from the semiconductor laser device is subjected to a predetermined filtering process by a filter 57G, and is input to a prism 58G. In the prism 58G, the angle of the laser beam 16G is changed and output to the polarizing plate 59. The polarizing plate 59 changes the phase of the laser beam 16G by 45 ° and outputs the same to the liquid crystal display device 60G. A video signal 41G is input to the liquid crystal display device 60G, and a laser beam 16G based on the video signal 41G is output to the polarizing plate 59G. The polarization plate 59 changes the phase of the laser light 16G by 45 °, and the laser light 16G whose phase is changed by 45 ° is input to the prism 58G. The prism 58 </ b> G outputs the input laser light 16 </ b> G to the dichroic prism 61.
[0049]
Reference numeral 16B denotes a laser beam output from the semiconductor laser device described above, reference numeral 57B denotes a filter, reference numeral 58B denotes a prism, reference numeral 59B denotes a polarizing plate, reference numeral 60B denotes a liquid crystal display device, and reference numeral 41B denotes a video signal. Here, B indicates Blue (blue).
[0050]
The laser beam 16B output from the semiconductor laser device is subjected to a predetermined filtering process by a filter 57B, and is input to a prism 58B. In the prism 58B, the angle of the laser beam 16B is changed and output to the polarizing plate 59. The polarizing plate 59 changes the phase of the laser light 16B by 45 ° and outputs the same to the liquid crystal display device 60B. The video signal 41B is input to the liquid crystal display device 60B, and the laser beam 16B based on the video signal 41B is output to the polarizing plate 59B. The polarizing plate 59 changes the phase of the laser beam 16B by 45 °, and the laser beam 16B whose phase has been changed by 45 ° is input to the prism 58B. The prism 58B outputs the input laser beam 16B to the dichroic prism 61.
[0051]
Reference numeral 61 denotes a dichroic prism, reference numeral 17 denotes a laser beam obtained by combining laser beams based on a video signal, and reference numeral 62 denotes a display device.
[0052]
Here, an image is displayed by obtaining R, G, and B laser beams from the semiconductor laser device described above.
[0053]
The dichroic prism 61 combines the input laser light 16R, laser light 16G, and laser light 16G, and transmits the combined laser light 17 to the display device 62. The display device 62 displays the received combined laser beam 17.
[0054]
【The invention's effect】
As described above, in the embodiment of the present invention, the first laser light can be used efficiently.
[0055]
Further, in the embodiment of the present invention, the amount of the first laser light input to the optical fiber (converter) to the outside can be reduced.
[0056]
Further, in the embodiment of the present invention, the output of the second laser light can be increased.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a semiconductor laser device according to the present invention.
FIG. 2 is a diagram illustrating a configuration of an optical fiber according to the present invention.
FIG. 3 is a diagram showing a state of an input side end of an optical fiber according to the present invention.
FIG. 4 is a diagram showing a state of an output side end of the optical fiber according to the present invention.
FIG. 5 is a diagram illustrating a video display device according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Optical fiber 1a ... Cladding part 1b ... Core part 3 ... Semiconductor laser 4 ... First laser beam 5 ... Cylindrical lens 6 ... Cylindrical lens 7 ... Condensing lens 12 ... Input side fiber end 13 ... Output side fiber end 14… Input side mirror (first mirror)
14a: second reflecting portion 14b: first reflecting portion 15: output side mirror (second mirror, third reflecting portion)
16 second laser light 30 semiconductor laser mounting section

Claims (12)

In a laser device that performs a wavelength conversion process on a laser beam and outputs the laser beam,
A laser light output unit that outputs a first laser light having a first wavelength;
A first end portion and a second end portion opposite to the first end portion, wherein the first laser beam is input from the first end portion, subjected to a wavelength conversion process, and subjected to the second end portion. A converter that outputs a second laser beam having a second wavelength from an end;
A first reflector provided at a first end of the converter and having a refractive index that transmits the first laser light and substantially totally reflects the second laser light; and A first mirror having both a laser beam and a second reflecting portion having a refractive index for substantially totally reflecting the second laser beam;
A second end of the converter is provided for substantially totally reflecting the first laser light and partially reflecting the second laser light with a lower reflectance than the second reflecting portion. And a second mirror having a third reflecting portion having a refractive index that substantially transmits the remainder. In a semiconductor laser device that performs a wavelength conversion process on a laser beam output from a semiconductor laser and outputs the laser beam,
A semiconductor laser that outputs a first laser beam having a first wavelength;
A first end portion and a second end portion opposite to the first end portion, wherein the first laser beam is input from the first end portion, subjected to a wavelength conversion process, and subjected to the second end portion. A converter that outputs a second laser beam having a second wavelength from an end;
A first reflector provided at a first end of the converter and having a refractive index that transmits the first laser light and substantially totally reflects the second laser light; and A first mirror having both a laser beam and a second reflecting portion having a refractive index for substantially totally reflecting the second laser beam;
A second end of the converter is provided for substantially totally reflecting the first laser light and partially reflecting the second laser light with a lower reflectance than the second reflecting portion. And a second mirror having a third reflecting portion having a refractive index that substantially transmits the remainder. In a semiconductor laser device that performs a wavelength conversion process on a laser beam output from a semiconductor laser and outputs the laser beam,
A semiconductor laser that outputs a first laser beam having a first wavelength;
A first end portion and a second end portion opposite to the first end portion, wherein the first laser beam is input from the first end portion, subjected to a wavelength conversion process, and subjected to the second end portion. A converter composed of an optical fiber that outputs a second laser beam having a second wavelength from an end;
A first reflector provided at a first end of the optical fiber and having a refractive index that transmits the first laser light and substantially totally reflects the second laser light; A first mirror including both a laser beam and a second reflector having a refractive index for substantially totally reflecting the second laser beam;
A second end of the converter is provided for substantially totally reflecting the first laser light and partially reflecting the second laser light with a lower reflectance than the second reflecting portion. And a second mirror having a third reflecting portion having a refractive index that substantially transmits the remainder. In a semiconductor laser device that performs a wavelength conversion process on a laser beam output from a semiconductor laser and outputs the laser beam,
A semiconductor laser that outputs a first laser beam having a first wavelength;
Lens means for condensing the output laser light,
A first end portion; a second end portion opposite to the first end portion; a first laser beam condensed by the lens means is input from the first end portion; A converter that is applied to output a second laser beam having a second wavelength from the second end;
A first reflector provided at a first end of the converter and having a refractive index that transmits the first laser light and substantially totally reflects the second laser light; and A first mirror having both a laser beam and a second reflecting portion having a refractive index for substantially totally reflecting the second laser beam;
A second end of the converter is provided for substantially totally reflecting the first laser light and partially reflecting the second laser light with a lower reflectance than the second reflecting portion. And a second mirror having a third reflecting portion having a refractive index that substantially transmits the remainder. 5. The semiconductor laser device according to claim 2, wherein the first reflection unit is configured to be longer in a slow axis direction than in a fast axis direction with respect to an output of the semiconductor laser. 6. 5. The semiconductor laser device according to claim 4, wherein said lens means comprises a cylindrical lens and a condenser lens. 2. The laser device according to claim 1, wherein a size and a position of the first reflecting portion are substantially equal to a size and a position of an image of the first laser light at the first end. 7. The semiconductor laser device according to claim 2, wherein a resonance of a second laser beam having a second wavelength is performed by the first mirror and the second mirror. 9. The semiconductor laser device according to claim 8, wherein the converter includes a rare earth element added to a core portion. 10. The semiconductor laser device according to claim 9, wherein the rare earth added to the core of the converter includes Pr3 + and Yb3 +. In a video display device that displays video using laser light output from a semiconductor laser device,
A semiconductor laser that outputs a first laser beam having a first wavelength;
A first end portion and a second end portion opposite to the first end portion, wherein the first laser beam is input from the first end portion, subjected to a wavelength conversion process, and subjected to the second end portion. A converter that outputs a second laser beam having a second wavelength from an end;
A first reflector provided at a first end of the converter and having a refractive index that transmits the first laser light and substantially totally reflects the second laser light; and A first mirror having both a laser beam and a second reflecting portion having a refractive index for substantially totally reflecting the second laser beam;
A second end of the converter is provided for substantially totally reflecting the first laser light and partially reflecting the second laser light with a lower reflectance than the second reflecting portion. A second mirror comprising a third reflector having a refractive index that substantially transmits the remainder;
Video processing means for receiving a video signal, performing video processing on the received video signal and outputting the processed video signal,
A video display unit that displays a video signal processed by the video processing means using the second laser light transmitted through the second mirror and output. Display device. Outputting a first laser beam having a first wavelength;
Outputting the output first laser light to a converter, performing a wavelength conversion process, and outputting a second laser light having a second wavelength;
A second end of the converter is provided for substantially totally reflecting the first laser light and partially reflecting the second laser light with a lower reflectance than the second reflecting portion. Reflecting the first laser beam by a second mirror having a third reflecting portion having a refractive index that substantially transmits the remainder;
A first reflector provided at the other end of the converter, having a refractive index that transmits the first laser light and substantially totally reflects the second laser light, and the first laser light Reflecting the first laser beam by a first mirror including both a second mirror and a second reflector having a refractive index that substantially totally reflects the second laser beam;
Resonating the second laser light with the first mirror and the second mirror and outputting the laser light.

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