JP2004319233A - Electron microscope - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron microscope capable of arbitrarily setting a dark-field STEM, a bright-field STEM or a capturing angle of an EELS (a diffusion angle on a sample face). <P>SOLUTION: An electron lens is disposed between an electron detector of a ring-like dark-field and an electron detector of a bright-field, an electron lens is disposed between the detector of the bright-field and an EELS spectrometer, and an object point of the EELS spectrometer is made to be a virtual image. According to this structure, it is possible to make a mechanical incident angle to the EELS spectrometer small without changing capturing angles to the electron detector of the dark-field and to the electron detector of the bright-field. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an electron microscope, and more particularly to an electron microscope for obtaining an energy loss spectrum, a dark-field image, or a bright-field image of an electron having a specific energy from an electron beam transmitted through a sample, or an observation and analysis apparatus for a minute area. .
[0002]
[Prior art]
In recent years, observing a material on an atomic level order and identifying types and bonding states of the atoms observed on an atomic level have become extremely important requirements in a semiconductor failure analysis section and a new material research field.
[0003]
As a method for analyzing a specific region, a transmission electron microscope (TEM), a scanning transmission electron microscope (STEM), and an energy loss spectroscopy (Electronic Energy) are combined with an energy loss spectroscopy (Electronic EnergyScopy). Is disclosed in Non-Patent Document 1. A spectrum (electron energy loss spectrum) obtained by EELS is often abbreviated as EELS.
[0004]
TEM and STEM are devices for observing the structure of a sample with high spatial resolution using an electron beam. EELS is a method of obtaining, as a spectrum, the energy and intensity of an electron beam that has lost energy in a sample using a spectrometer attached as an accessory to a TEM or STEM. From this spectrum, it is possible to examine the phenomenon that has occurred inside the sample, the type of element, and the bonding state, and it is possible to perform quantitative analysis through processing such as background correction.
[0005]
FIG. 1 shows an example in which EELS is attached to a TEM / STEM device. Reference numeral 1 denotes a TEM / STEM device main body. The irradiation electron beam 20 emitted from the electron gun 2 is narrowed down by the focusing lens system 3 and irradiated onto the sample 10. The irradiation position and angle are determined by the deflection coil 7. The electron beam transmitted through the sample is split into a transmitted electron beam 21 and a scattered electron beam 22, passes through the objective lens 4, the intermediate lens system 5, and the projection lens system 6, is once converged by the crossover 25, and spread again. The scattered electron beam 22 is detected by an annular dark-field electron detector 30. An opening is provided in the annular dark-field electron detector 30, and the transmitted electron beam 21 passing through the opening is detected by the bright-field electron detector 31. The bright-field electron detector 31 and the bright-field stop 35 can be moved in and out, so that the transmitted electron beam 21 can be made incident on the spectrometer 32 by taking it out of the optical axis.
[0006]
The observation of the TEM image is performed as follows. The annular dark-field electron detector 30 can be taken in and out, and can be taken out from the optical axis. In the removed state, an enlarged image of the sample 10 can be observed on the fluorescent screen 11 and recorded on the photographic film 12.
[0007]
Observation of the STEM image is performed as follows. The control system 13 sends a scanning signal 15 to the deflection coil 7 and scans the focused electron beam 20 on the sample 10. The electron beam intensity detected by the annular dark-field electron detector 30 or the bright-field electron detector 31 is displayed on the scanning image display device 14 as a luminance signal. If the display is performed in synchronization with the scan synchronization signal 17 sent from the control system 13, a STEM image can be obtained.
[0008]
The acquisition of EELS is performed as follows. By taking out the fluorescent plate 11, the photographic film 12, the bright-field electron detector 31, and the bright-field stop 35 off the optical axis, the transmitted electron beam 21 incident on the spectrometer 32 is subjected to energy spectroscopy, and a zero-loss electron beam 23 and an energy-loss electron beam. 24 to form EELS. The energy dispersion is set by the deflection lens system 33, and the final EELS is obtained by the spectrum detector.
[0009]
The spectrometer 32 has asymmetric lens characteristics, and uses the crossover 25 as an object point and the spectrum detector 34 as an image plane. When the intermediate lens system 5 and the projection lens system 6 are adjusted so that the image of the sample 10 is formed on the crossover 25, it is possible to obtain the EELS of the sample 10 only in a minute area where the irradiation electron beam 20 is irradiated.
[0010]
FIG. 2 shows an example in which EELS is attached to a STEM device. The STEM main body 8 has a small number of imaging system lenses, and FIG. 2 shows a case where only one projection lens 9 is provided. Also, there is no fluorescent screen or photographic film. Others are the same as the TEM / STEM device 1.
[0011]
The information contained in the electron beam 22 scattered by the sample changes depending on the type of element constituting the sample and the scattering angle. The electron beam scattered at a low angle (<several mrad) including the transmitted electron beam 21 contains structural information such as crystal defects, and is used for detecting the bright field electron detector 31 and observing the phase contrast. Are suitable. The scattered electron beam 22 scattered at a relatively low angle (about several mrad to 20 mrad) contains information on diffraction contrast, and is suitable for detection by the annular dark-field electron detector 32 and observation of internal crystal defects. ing. The scattered electron beam 22 scattered at a high angle (> 20 mrad) contains information depending on the density of the sample, and is suitable for detection by the annular dark-field electron detector 32 to identify constituent elements. The contrast obtained in this way is sometimes referred to as Z contrast.
[0012]
The conditions for optimally acquiring the dark-field STEM image, bright-field STEM image, and EELS are set as follows.
[0013]
The spatial resolution for observation and analysis is determined by the probe size of the irradiation electron beam. In order to set a desired spatial resolution, the lens currents of the focusing lens system 3 and the objective lens 4 are adjusted. The convergence angle to the sample and the probe current are determined by the focusing lens stop 37.
[0014]
Using the intermediate lens system 5 and the projection lens system 6 in the case of the TEM, and using the projection lens 9 in the case of the STEM, the image of the electron beam converged on the sample 10 is formed on the crossover 25. A diffraction image appears after the crossover 25. At this time, since the scattering angle is proportional to the distance from the optical axis, the scattering angle that can be taken into the annular dark-field electron detector 30 can be determined by changing the magnification of the lens system.
[0015]
Hereinafter, when simply referred to as “capture angle”, it is not a mechanical angle of the electron beam incident on the detector or the spectrometer, but a scattering angle due to the sample converted on the sample surface. When referring to mechanical angles, the adjective "mechanical" will be used.
[0016]
The electron beam passing through the opening provided in the annular dark-field electron detector 30 enters the bright-field electron detector 31. Usually, the scattering angle is unnecessarily large, so that the capturing angle is limited by using the bright-field stop 35.
[0017]
When the bright-field stop 35 and the bright-field electron detector 31 are taken out of the optical axis, an electron beam passing through an opening provided in the annular dark-field electron detector 30 enters the spectrometer 32. Again, the scattering angle is usually larger than necessary, so the EELS entrance stop 36 is used to limit the capture angle.
[0018]
The energy resolution by the spectrometer is determined not only by the energy width of the irradiation electron beam 20 generated from the electron gun 2 but also by the mechanical angle limited by the EELS entrance stop 36.
[0019]
When the Z-contrast is detected by the annular dark-field electron detector 30, the scattering angle range to be detected has an optimum value. Since the scattering angle for the EELS analysis includes information on diffraction contrast, it is better to avoid this region. Although it depends on the acceleration voltage, in the case of a crystalline sample, a scattered electron beam having a scattering angle of 50 mrad or more is preferably used. In the case of an amorphous sample, the scattering angle may be 10 mrad or more (from Non-Patent Document 1).
[0020]
The scattering angle range detected by the bright-field electron detector 31 when observing the bright-field STEM image corresponds to the opening angle of the irradiation electron beam 20 when observing the TEM image. Since the phase contrast can be obtained with a smaller opening angle in TEM image observation with better contrast, the smaller the capture angle detected by the bright-field electron detector 31 is, the better. However, if it is too small, the signal amount itself will decrease, causing a decrease in S / N. It is practical to use scattered electrons having a scattering angle of 4 mrad or less.
[0021]
Inelastic scattered electrons (electrons that have lost energy in the sample and are subject to EELS analysis) depend on the accelerating voltage of the electron beam and the constituent elements of the sample, but most of them scatter about 0.2 mrad to 20 mrad. Since it exists in the angle region (from Non-Patent Document 1), it is desired that the spectrometer 32 be set so that the angle region including these is incident.
[0022]
Since the capture angle effective for the dark-field STEM image, particularly the Z-contrast observation, is larger than the angle effective for the bright-field STEM image, these images can be displayed simultaneously. Further, for the same reason, the dark field STEM image and the EELS analysis can be simultaneously performed.
[0023]
[Non-patent document 1]
R. F. Egerton: Electron Energy-Loss Spectroscopy in the Electron Microscope, Plenum Press (1986)
[0024]
[Problems to be solved by the invention]
As described above, the dark field STEM, the bright field STEM, and the EELS have an optimum scattering angle range that changes depending on the acceleration voltage, the sample structure, the sample constituent elements, and the like. That is, it is desirable that these conditions can be set independently. However, if the excitation current of the projection lens system 6 or the projection lens 9 is set specifically for dark-field STEM observation, the angle range captured by the bright-field electron detector 31 is uniquely determined. That is, the capturing angle range can be changed only by the hole diameter of the bright field stop 35. It cannot respond to all the various conditions.
[0025]
Similarly, the capture angle of the EELS with the spectrometer 32 is uniquely determined, so that the capture angle range can be changed only by the hole diameter of the EELS entrance stop 36. It cannot respond to all the various conditions.
[0026]
Further, as described above, the energy resolution of the EELS is also determined by the mechanical angle limited by the EELS entrance stop 36. This is because there is a geometrical aberration of the spectrometer 32, and the smaller the mechanical angle of the incident electron beam, the more advantageous. Therefore, the larger the enlargement ratio in the crossover 25 is, the better. However, there is a contradiction that when the magnification is increased, only the scattered electron beams scattered at a relatively large angle enter the dark-field electron detector 30.
[0027]
An object of the present invention is to provide an optical system that easily satisfies the optimum scattering angle for each of a dark-field STEM image, a bright-field STEM image, and EELS, and / or provides an EELS. An object of the present invention is to provide an optical system that does not impair energy resolution.
[0028]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is characterized in that the following means are taken.
[0029]
The object point of the EELS spectrometer is converted into a virtual image. According to such a configuration, the mechanical angle of incidence on the EELS spectrometer can be reduced, and the energy resolution of the EELS is not impaired.
[0030]
An electron lens is placed between the annular dark field electron detector and the bright field electron detector. According to such a configuration, the capture angle of the dark-field electron detector and the capture angle of the bright-field electron detector can be set independently.
[0031]
An electron lens is placed between the bright field electron detector and the EELS spectrometer. According to such a configuration, it is possible to set the capture angle of the bright-field electron detector and the capture angle of the EELS spectrometer independently.
[0032]
An electron lens is arranged between the bright-field electron detector and the EELS spectrometer, and an object point of the EELS spectrometer is a virtual image. According to such a configuration, the mechanical incident angle to the EELS spectrometer can be reduced without changing the take-in angle to the bright-field electron detector, and the energy resolution of the EELS is not impaired. .
[0033]
An electron lens is placed between the annular dark field electron detector and the EELS spectrometer. According to such a configuration, the take-in angle of the annular dark-field electron detector and the take-in angle of the EELS spectrometer can be set independently.
[0034]
An electron lens is arranged between the annular dark-field electron detector and the EELS spectrometer, and the object point of the EELS spectrometer is made a virtual image. According to such a configuration, the mechanical incident angle to the EELS spectrometer can be reduced without changing the take-in angle to the annular dark-field electron detector, so that the energy resolution of the EELS is not impaired. Become.
[0035]
An electron lens is placed between the annular dark field electron detector and the bright field electron detector, and an electron lens is placed between the bright field electron detector and the EELS spectrometer. According to such a configuration, the capture angle of the annular dark-field electron detector, the capture angle of the bright-field electron detector, and the capture angle of the EELS spectrometer can be set independently.
[0036]
An electron lens is arranged between the annular dark-field electron detector and the bright-field electron detector, and an electron lens is arranged between the bright-field electron detector and the EELS spectrometer, and the object point of the EELS spectrometer is determined. Make it a virtual image. According to such a configuration, the mechanical angle of incidence on the EELS spectrometer can be reduced without changing the angle of incorporation into the annular dark-field electron detector and the angle of incorporation into the bright-field electron detector. , EELS does not impair the energy resolution.
[0037]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0038]
FIG. 3 is a block diagram of a first embodiment of the microscopic area observation and analysis apparatus according to the present invention. Reference numeral 41 denotes a microscopic observation and analysis device according to the present invention. The components from the electron gun 2 to the objective lens 4 are the same as those in FIG. An image of the irradiation electron beam 20 converged on the sample 10 exists as a crossover 25 below the objective lens 4. This is expanded to a virtual image crossover 40 using the projection lens 9. The spectrometer 32 disperses energy using the crossover 40 of the virtual image as an object point. Subsequent steps are the same as in FIG.
[0039]
As described above, an electron beam having a scattering angle of 20 mrad or less is used for EELS. On the other hand, the mechanical incident angle is desirably 1 mrad or less due to the aberration of the spectrometer 32 or the like. That is, the magnification by the objective lens 4 and the projection lens 9 needs to be 20 times or more. The distance between the objective lens 4 and the projection lens 9 and the distance between the projection lens 9 and the spectrometer 32 can be increased depending on the focal length of the objective lens 4 and the like. However, the device becomes uselessly tall. Therefore, the objective lens 4 forms a real image crossover 25 between the objective lens 4 and the projection lens 9, and further adjusts the lens current so that the projection lens 9 forms a virtual image crossover 40. If the magnification of the objective lens 4 is 10 times and the magnification of the projection lens 9 is 2 times, the required magnification of 20 times can be easily achieved.
[0040]
FIG. 4 is a block diagram of a second embodiment of the microscopic area observation and analysis apparatus according to the present invention. Reference numeral 42 denotes an apparatus for observing and analyzing a minute area according to the present invention. The configuration from the electron gun 2 to the annular dark-field electron detector 30 is the same as that in FIG. A second projection lens 38 is arranged below the annular dark-field electron detector 30, and a bright-field stop 35 and a bright-field electron detector 31 are arranged below the second projection lens 38. The second projection lens 38 forms an image of the crossover 25 on the second crossover 26. The electron beam that has passed through the bright field stop 35 is detected by the bright field electron detector 31. The capture angle of the electron beam detected by the bright-field electron detector 31 can be controlled independently of the capture angle of the annular dark-field electron detector 30 by changing the lens current of the second projection lens 38. it can. At this time, it is not necessary to change the hole diameter of the bright field stop 35.
[0041]
FIG. 5 is a block diagram of a third embodiment of the microscopic area observation and analysis apparatus according to the present invention. Reference numeral 43 denotes a microscopic region observation and analysis device according to the present invention. The components from the electron gun 2 to the projection lens 9 are the same as those in FIG. A bright-field stop 35 and a bright-field electron detector 31 are arranged below the projection lens 9, and a second projection lens 38 is arranged below the bright-field stop 35 and the bright-field electron detector 31. Further, an EELS entrance stop 36 and a spectrometer 32 are disposed below the EELS entrance stop 36. Thereafter, it is equivalent to FIG. The projection lens 9 forms an image of the crossover 25, and the bright-field electron detector 31 detects the electron beam intensity at the capture angle limited by the bright-field stop 35. The bright-field electron detector 31 and the bright-field stop 35 can be moved in and out of the optical axis, and by taking them out, an electron beam can be made incident on the spectrometer 32. The second projection lens 38 forms the crossover 25 into a virtual image crossover 40. The spectrometer 32 performs energy analysis using the virtual image crossover 40 as an object point. Since the ideal take-in angle to the bright-field electron detector 31 is 4 mrad, if the magnification of the objective lens 4 is set to 10 times and the magnification of the projection lens 9 is set to 1 time, the mechanical incident angle becomes 0.4 mrad. Become. It is easy to obtain this value if the aperture of the bright field stop 35 is appropriately set. On the other hand, if the ideal take-in angle to the spectrometer 32 is 20 mrad, the mechanical angle at the crossover 25 is 5 times, that is, 2 mrad. In order to reduce the mechanical incident angle to the spectrometer 32 to 1 mrad or less, the magnification by the second projection lens 38 may be doubled. Also, the exciting current of the projection lens 9 is changed to change the taking-in angle to the bright-field electron detector 31, and the exciting current of the second projecting lens 38 is changed to change the taking-in angle to the spectrometer. They may be set independently.
[0042]
FIG. 6 is a block diagram of a fourth embodiment of the microscopic area observation and analysis apparatus according to the present invention. Reference numeral 44 denotes an apparatus for observing and analyzing a minute area according to the present invention. 5 is the same as FIG. 5 except that the bright-field electron detector 31 in FIG. The method of controlling the lens current is the same as that of FIG. In the case where the ideal take-in angle to the annular dark-field electron detector 30 is 50 mrad or more, if the magnification of the objective lens 4 is set to 10 times and the magnification of the projection lens 9 is set to 1 time, the mechanical incident angle becomes 5 mrad. . If the hole diameter of the annular dark-field electron detector 30 is appropriately set, it is easy to obtain this value. On the other hand, if the ideal take-in angle to the spectrometer 32 is 20 mrad, the mechanical angle in the crossover 25 is 2/5 times 2 mrad. In order to reduce the mechanical incident angle to the spectrometer 32 to 1 mrad or less, the magnification by the second projection lens 38 may be doubled. Further, the excitation current of the projection lens 9 is changed to change the take-in angle to the annular dark-field electron detector 30, and the excitation current of the second projection lens 38 is changed to change the take-up angle to the spectrometer. And they can be set independently.
[0043]
FIG. 7 is a block diagram of a fifth embodiment of the microscopic area observation and analysis apparatus according to the present invention. Reference numeral 45 denotes an apparatus for observing and analyzing a minute area according to the present invention. A third projection lens 39 is arranged below the bright-field electron detector 31 in the embodiment of FIG. 4, and a spectrometer 32 is arranged thereunder. In the case where the ideal take-in angle to the annular dark-field electron detector 30 is 50 mrad or more, if the magnification of the objective lens 4 is set to 10 times and the magnification of the projection lens 9 is set to 1 time, the mechanical incident angle becomes 5 mrad. . Assuming that the magnification of the second projection lens 38 is 1, the mechanical angle of incidence on the second crossover 26 is also 5 mrad. In order to realize 4 mrad, which is an ideal angle of capture into the bright-field electron detector 31, the hole diameter of the bright-field stop 35 is adjusted so that the mechanical incident angle to the second crossover 26 becomes 0.4 mrad. Just set it. Further, the ideal take-in angle to the spectrometer 32 can be determined by adjusting the excitation current of the third projection lens 39 after removing the bright field stop 35 and the bright field electron detector 31 from the optical axis. 5 can be easily realized. Further, the respective take-in angles can be set independently by the excitation currents of the projection lens 9, the second projection lens 38, and the third projection lens 39.
[0044]
FIG. 8 is a block diagram of a sixth embodiment of the microscopic area observation and analysis apparatus according to the present invention. Reference numeral 46 denotes a microscopic region observation and analysis device according to the present invention, which is an example applied to a TEM / STEM device. An annular dark-field electron detector 30 is arranged below the intermediate lens system 5 and the projection lens 9. Hereinafter, a second projection lens 38, a bright-field stop 35, a bright-field electron detector 31, a fluorescent screen 11, a photographic film 12, a third projection lens 39, an EELS entrance stop 36, and a spectrometer 32 are arranged in this order. The adjustment of the electron optical system is the same as in FIG.
[0045]
【The invention's effect】
As described above, according to the present invention, the following effects are achieved.
[0046]
The object point of the EELS spectrometer is converted into a virtual image. According to such a configuration, the mechanical angle of incidence on the EELS spectrometer can be reduced, and the energy resolution of the EELS is not impaired.
[0047]
An electron lens is placed between the annular dark field electron detector and the bright field electron detector. According to such a configuration, the capture angle of the dark-field electron detector and the capture angle of the bright-field electron detector can be set independently.
[0048]
An electron lens is placed between the bright field electron detector and the EELS spectrometer. According to such a configuration, it is possible to set the capture angle of the bright-field electron detector and the capture angle of the EELS spectrometer independently.
[0049]
An electron lens is arranged between the bright-field electron detector and the EELS spectrometer, and an object point of the EELS spectrometer is a virtual image. According to such a configuration, the mechanical incident angle to the EELS spectrometer can be reduced without changing the take-in angle to the bright-field electron detector, and the energy resolution of the EELS is not impaired. .
[0050]
An electron lens is placed between the annular dark field electron detector and the EELS spectrometer. According to such a configuration, the take-in angle of the annular dark-field electron detector and the take-in angle of the EELS spectrometer can be set independently.
[0051]
An electron lens is arranged between the annular dark-field electron detector and the EELS spectrometer, and the object point of the EELS spectrometer is made a virtual image. According to such a configuration, the mechanical incident angle to the EELS spectrometer can be reduced without changing the take-in angle to the annular dark-field electron detector, so that the energy resolution of the EELS is not impaired. Become.
[0052]
An electron lens is placed between the annular dark field electron detector and the bright field electron detector, and an electron lens is placed between the bright field electron detector and the EELS spectrometer. According to such a configuration, the capture angle of the annular dark-field electron detector, the capture angle of the bright-field electron detector, and the capture angle of the EELS spectrometer can be set independently.
[0053]
An electron lens is arranged between the annular dark-field electron detector and the bright-field electron detector, and an electron lens is arranged between the bright-field electron detector and the EELS spectrometer, and the object point of the EELS spectrometer is determined. Make it a virtual image. According to such a configuration, the mechanical angle of incidence on the EELS spectrometer can be reduced without changing the angle of incorporation into the annular dark-field electron detector and the angle of incorporation into the bright-field electron detector. , EELS does not impair the energy resolution.
[Brief description of the drawings]
FIG. 1 is a block diagram of an example in which an EELS is attached to a TEM / STEM device.
FIG. 2 is a block diagram of an example in which an EELS is attached to a STEM device.
FIG. 3 is a block diagram of a first embodiment of a microscopic area observation and analysis apparatus according to the present invention.
FIG. 4 is a block diagram of a second embodiment of the microscopic area observation and analysis apparatus according to the present invention.
FIG. 5 is a block diagram of a third embodiment of a microscopic area observation and analysis apparatus according to the present invention.
FIG. 6 is a block diagram of a fourth embodiment of an apparatus for observing and analyzing a minute area according to the present invention.
FIG. 7 is a block diagram of a fifth embodiment of an apparatus for observing and analyzing a small area according to the present invention.
FIG. 8 is a block diagram of a sixth embodiment of an apparatus for observing and analyzing a minute area according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... TEM / STEM apparatus main body, 2 ... Electron gun, 3 ... Converging lens system, 4 ... Objective lens, 5 ... Intermediate lens system, 6 ... Projection lens system, 7 ... Deflection coil, 8 ... STEM apparatus main body, 9 ... Projection Lens, 10 sample, 11 fluorescent plate, 12 photographic film,
Reference numeral 13: control system, 14: scanning image display device, 15: scanning signal, 16: lens control signal, 17: scanning synchronization signal, 18: dark field image signal, 19: bright field image signal, 20: irradiation electron beam, 21 ... Transmission electron beam, 22 ... scattered electron beam, 23 ... zero-loss electron beam,
24: energy loss electron beam, 25: crossover, 26: second crossover, 30: annular dark-field electron detector, 31: bright-field electron detector, 32: spectrometer, 33: deflection lens system, 34: Spectral detector, 35: bright field stop, 36: EELS entrance stop, 37: focusing lens stop, 38: second projection lens,
39: a third projection lens, 40: crossover of a virtual image, 41: a first embodiment of an observation and analysis device for a minute region, 42: a second embodiment of an observation and analysis device for a minute region, 43: minute The third embodiment of the region observation and analysis device, 44... The fourth embodiment of the minute region observation and analysis device, 45 the fifth embodiment of the minute region observation and analysis device, 46. A sixth embodiment of the observation and analysis device.

Claims (9)

An electron microscope including an electron gun, a focusing lens that focuses an electron beam emitted from the electron gun, an imaging lens that images electrons transmitted through the sample, and a spectrometer that performs energy spectroscopy of the electrons transmitted through the sample. At
An electron microscope, wherein the object point of the spectrometer is a virtual image. An electron gun, a focusing lens for focusing an electron beam emitted from the electron gun, an imaging lens for imaging electrons transmitted through the sample, and detecting electrons scattered by the sample among electrons transmitted through the sample. In a scattered electron detector and an electron microscope equipped with a transmission electron detector that detects an electron beam that has passed through the scattered electron detector,
An electron microscope, wherein at least one of the imaging lenses is disposed between the scattered electron detector and the transmitted electron detector. An electron gun, a focusing lens for focusing an electron beam emitted from the electron gun, an imaging lens for imaging electrons transmitted through the sample, a transmission electron detector for detecting electrons transmitted through the sample, and In an electron microscope equipped with a spectrometer for energy spectroscopy of a transmitted electron beam,
An electron microscope, wherein at least one of the imaging lenses is disposed between the transmission electron detector and the spectrometer. In claim 3,
An electron microscope, wherein the object point of the spectrometer is a virtual image. An electron gun, a focusing lens for focusing an electron beam emitted from the electron gun, an imaging lens for imaging electrons transmitted through the sample, and detecting electrons scattered by the sample among electrons transmitted through the sample. In an electron microscope equipped with a scattered electron detector and a spectrometer that performs energy spectroscopy of an electron beam transmitted through a sample,
An electron microscope, wherein at least one of the imaging lenses is arranged between the scattered electron detector and the spectrometer. In claim 5,
An electron microscope, wherein the object point of the spectrometer is a virtual image. An electron gun, a focusing lens for focusing an electron beam emitted from the electron gun, an imaging lens for imaging electrons transmitted through the sample, and detecting electrons scattered by the sample among electrons transmitted through the sample. In a scattered electron detector, a transmission electron detector that detects an electron beam that has passed through the scattered electron detector, and an electron microscope that includes a spectrometer that performs energy spectroscopy on electrons transmitted through the sample,
An electron microscope, wherein at least one of the imaging lenses is disposed between the scattered electron detector and the transmitted electron detector. In claim 7,
An electron microscope, wherein at least one of the imaging lenses is disposed between the transmission electron detector and the spectrum meter. In claim 7 or 8,
An electron microscope, wherein the object point of the spectrometer is a virtual image.

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