JP2004288775A - Semiconductor manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which improves uniformity within a substrate arranged global surface and can give desired temperature distribution into a substrate surface of a substrate arranged end portion by improving temperature uniformity within the substrate surface in the substrate arranged end portion. <P>SOLUTION: Two exoergic zones 7a and 7b are formed in a region exceeding substrate arrangement upward. Two exoergic zones 7c and 7d are formed in a region exceeding the substrate arrangement downward. Two exoergic zones 7e and 7f are formed in a region which faces the substrate arrangement. Cylindrical exoergic zones 7 which are mutually independent as an electric circuit are constituted. In each of the exoergic zones 7, energizing electric power is controlled independently every exoergic zone 7. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor manufacturing apparatus provided with a heater having a plurality of divided heating zones capable of heating a plurality of substrates.
[0002]
[Prior art]
FIG. 3 shows a furnace structure of a conventional vertical semiconductor manufacturing apparatus.
[0003]
In this semiconductor manufacturing apparatus, a plurality of substrates 1 are mounted on a substrate mounting table in such a manner that a plurality of substrates 1 are stacked so as to be stacked at a vertical interval in a posture such that the plane portions thereof are horizontal. Then, the substrate mounting table 2 is mounted on the heat retaining cylinder 4 and accommodated in the process tube 3.
[0004]
The heater 10 serving as a heating source is provided with a heating section including a resistance heating element on the inner side wall of the cylindrical heat insulating material 5 having an open section below so as to face the substrate arrangement, and supplies electric power to the resistance heating element. It generates heat when supplied. Its shape is a cylindrical shape that extends vertically to a region that extends vertically above and below the substrate arrangement in FIG. In addition, the heat generating portion includes one heat generating zone 6a in a region exceeding the substrate arrangement, one heat generating zone 6b in a region exceeding the substrate arrangement downward, and two heat generating zones 6c and 6d, and each constitutes an independent cylindrical heat generating zone 6 as an electric circuit. In each heating zone 6, the power to be supplied can be controlled independently for each heating zone, whereby a desired temperature distribution can be given to the substrate arrangement mainly in the axial direction of the substrate arrangement. It is possible. In particular, the heat generation zones 6a and 6b vertically extending over the substrate arrangement can provide a desired temperature distribution to the substrate 1 at the upper end and the lower end in the temperature distribution in the axial direction of the substrate arrangement.
[0005]
[Problems to be solved by the invention]
However, in the above-described conventional heater structure, only one heat-generating zone 6a and 6b is provided in each of the regions vertically extending beyond the substrate arrangement. Therefore, heating to the substrate arrangement is exclusively performed on the side wall surface of the substrate arrangement. , And there is no active heating from the upper and lower surfaces of the substrate array. For this reason, there is a problem that it is difficult to adjust the in-plane temperature distribution of the substrate 1 arranged at the substrate arrangement end.
[0006]
An object of the present invention is to solve the conventional problems as described above, and to improve the temperature uniformity in the substrate surface at the end of the substrate arrangement where the in-plane temperature uniformity is difficult to obtain for the substrate arrangement. Accordingly, an object of the present invention is to provide a semiconductor manufacturing apparatus capable of improving the in-plane uniformity of the entire substrate arrangement and providing a desired temperature distribution in the substrate surface at the end of the substrate arrangement.
[0007]
[Means for Solving the Problems]
The present invention is directed to a semiconductor manufacturing apparatus including: a substrate mounting table on which a plurality of substrates are arranged and mounted; and a heater having a heating zone capable of heating the plurality of substrates mounted on the substrate mounting table. Is characterized by having a plurality of heating zones, each of which can be independently controlled in temperature, in a region beyond the substrate arrangement mounted on the substrate mounting table.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Embodiment 1 FIG.
FIG. 1 shows a schematic sectional view of Embodiment 1 of the present invention.
[0009]
In this semiconductor manufacturing apparatus, a plurality of substrates 1 are mounted on a substrate mounting table 2 by forming a substrate array so that the plurality of substrates 1 are stacked vertically at intervals so that the plane portions thereof are horizontal, The substrate mounting table 2 is mounted on the heat retaining cylinder 4 and housed in the process tube 3.
[0010]
The reaction furnace is provided with a heater 10 serving as a heating source for heating the substrate 1, and the heater 10 generates heat by supplying electric power to the resistance heating element. The heater 10 is provided with a heat generating portion formed of a resistance heating element on the inner side wall of the tea caddy type heat insulating material 5 having an open portion below so as to face the substrate arrangement. It has a cylindrical shape that extends in the vertical direction up to the middle and upper and lower areas. In addition, the heat generating portion includes two heat generating zones 7a and 7b in a region above the substrate arrangement, two heat zones 7c and 7d in a region beyond the substrate arrangement, and two heat zones in a region facing the substrate arrangement. It has heat generating zones 7e and 7f, respectively, and forms independent cylindrical heat generating zones 7 as electric circuits. In each heating zone 7, the power to be supplied can be controlled independently for each heating zone 7.
[0011]
In general, as for the heat transfer form between the resistance heating element and the substrate 1, the higher the temperature of the resistance heating element, the more the radiation heat transfer is dominant. The view factor greatly affects the degree of heating of the substrate 1. The view factor between a certain heating zone 7 and the substrate 1 depends on the positional relationship between the heating zone 7 and the substrate 1. The distribution of the view factor is given such that the inner peripheral portion becomes larger toward the central portion. This tendency that the peripheral portion of the substrate arrangement end portion in the surface of the substrate 1 has a larger view factor than the central portion becomes less remarkable as the heating zone 7 moves away from the substrate arrangement, and the difference between the peripheral portion and the central portion becomes smaller. Become. In other words, the influence of the degree of heating by the heat generating zones 7a and 7c close to the substrate arrangement is due to the directivity at the edge of the substrate 1 at the end of the substrate arrangement and the influence of the degree of heating by the heat generating zones 7b and 7d far from the substrate arrangement. Then, this tendency is small. Utilizing this phenomenon, the heating conditions in the heating zones 7a and 7c near the substrate arrangement and the heating zones 7b and 7d far from the substrate arrangement are adjusted by these outputs, thereby adjusting the heating condition in the substrate 1 surface at the end of the substrate arrangement. It is possible to do.
[0012]
Hereinafter, a method of adjusting the heating condition will be described.
When the in-plane temperature distribution of the substrate 1 is such that the peripheral portion is low and the central portion is high, the outputs of the heating zones 7a and 7c close to the substrate arrangement are sufficiently small, and the heat generation zones 7a and 7c near the substrate arrangement are reduced. Decrease temperature. As a result, heat is radiated to the heater 10 from the peripheral edge of the substrate 1 near the substrate arrangement end. In addition, the outputs of the heat generating zones 7b and 7d far from the substrate arrangement are increased to actively heat the vicinity of the center of the substrate 1 near the end of the substrate arrangement. As a result, the ratio of heat at the edge of the substrate 1 at the end of the substrate arrangement in the plane of the substrate 1 becomes smaller than that of the other parts, so that the in-plane temperature distribution of the substrate 1 is reduced in the state where the periphery is low and the center is high. It becomes possible.
[0013]
When the in-plane temperature distribution of the substrate 1 is such that the peripheral portion is high and the central portion is low, the outputs of the heating zones 7a and 7c close to the substrate arrangement are increased, and the peripheral portion of the substrate 1 near the substrate arrangement end is increased. Heat the part actively. Further, the outputs of the heat generating zones 7b and 7d far from the substrate arrangement are made sufficiently small, and the heat is radiated to the heater 10 from near the center of the substrate 1 near the end of the substrate arrangement. As a result, the ratio of heat at the edge of the substrate 1 at the edge of the substrate arrangement in the plane of the substrate 1 is higher than in the other portions. It becomes possible.
[0014]
Further, when the in-plane temperature distribution of the substrate 1 is made relatively uniform, the outputs of the heating zones 7a and 7c closer to the substrate arrangement are appropriately smaller than the outputs of the heating zones 7b and 7d far from the substrate arrangement. Adjust each as follows. Thereby, it is possible to reduce the bias of the heat toward the peripheral portion of the substrate 1 and to make the in-plane temperature distribution of the substrate 1 relatively uniform.
[0015]
Further, when determining the in-plane temperature distribution of the substrate 1, a desired axial temperature distribution can be obtained by taking into consideration the interference of the heating condition with the heat generating zones 7e and 7f in the region facing the substrate arrangement.
[0016]
In the first embodiment, the heating zones provided in the region beyond the substrate arrangement are divided into a plurality of heating zones, ie, a heating zone close to the substrate arrangement and a heating zone far from the substrate arrangement. However, the present invention is not limited to such a method. It is also possible to form a single heating zone by arranging resistance heating elements in which the heating temperature is changed by changing the shape, material, arrangement distribution, and the like between a portion close to the array and a portion far from the array.
[0017]
Embodiment 2 FIG.
FIG. 2 shows a second embodiment as a specific example.
As shown in FIG. 2A, two stages of resistance heating elements constituting the high output section R1 and the low output section R2 are connected in parallel in the vertical direction to form one heating zone. The value is determined by the structural elements (length, cross-sectional area) of the heating resistor, material characteristics (specific resistivity of the material and its temperature dependency), electrical circuit configuration, and the like.
[0018]
In the present embodiment, the high-output portion R1 and the low-output portion R2 use the same material and the same cross-sectional area as the resistance heating elements, and have different structures. That is, conventionally, as shown in FIG. 2C, the two output units R1 and R2 have the same structure, but in the present embodiment, as shown in FIG. The length of R1 is shorter than that of the low output portion R2, and the resistance value is also different due to the difference in the length. The high output portion R1 has a lower resistance. Therefore, when power is supplied to this heat generating zone, the high output portion R1 has a high output, and the low output portion R2 has a low output. For this reason, since the high-output portion R1 is a high-temperature portion and the low-output portion R2 is a low-temperature portion, the portion far from the substrate arrangement has a low temperature near the high temperature, which affects the in-plane temperature distribution of the substrate 1. Can be.
[0019]
However, the degree of heating of the substrate 1 by the high-output portion R1 and the low-output portion R2 is determined in advance by a hardware element of the heat generation zone, and therefore, the in-plane temperature distribution of the substrate 1 near the end of the substrate arrangement follows the condition. It becomes something.
[0020]
In the first embodiment, two heat-generating zones are provided in a region beyond the substrate arrangement. However, the number of heat-generating zones is not limited to two as long as it is two or more.
[0021]
Further, in the second embodiment, two temperature regions of a low-temperature portion and a high-temperature portion are provided in the heat generation zone in a region beyond the substrate arrangement. Absent.
[0022]
Further, in the second embodiment, the temperature difference between the low-output portion R2 and the high-output portion R1 is determined by the length of the resistance heating element. However, by changing the material and other factors such as the cross-sectional area, You may decide.
[0023]
【The invention's effect】
As described above, according to the present invention, by providing a plurality of heating zones, each of which can be independently temperature-controlled, in a region beyond the substrate arrangement, the temperature of each zone is changed, so that the end of the substrate arrangement end is provided. The desired temperature, such as making the in-plane temperature distribution of the substrate almost uniform over the entire surface, making the peripheral portion high and the central portion low, and conversely making the peripheral portion low and the central portion high. A distribution can be obtained.
Further, by improving the in-plane temperature uniformity of the substrate arrangement end portion where the in-plane temperature uniformity is difficult to achieve, the in-plane uniformity of the entire substrate arrangement can be improved.
[Brief description of the drawings]
FIG. 1 is a schematic view showing a furnace body structure according to a first embodiment of the present invention.
FIG. 2A is a schematic diagram showing a second embodiment.
(B) It is a figure showing the shape of the resistance heating element of a 2nd embodiment.
(C) is a diagram showing the shape of a conventional resistance heating element.
FIG. 3 is a schematic diagram showing a conventional furnace body structure.
[Explanation of symbols]
1 Substrate, 2 Substrate mounting table, 5 Insulation material, 7 Heating zone, 7a, 7c Near heating zone (heating zone), 7b, 7d Far heating zone (heating zone), 10 heaters.

Claims (1)

In a semiconductor manufacturing apparatus including a substrate mounting table on which a plurality of substrates are arranged and mounted, and a heater having a heating zone capable of heating the plurality of substrates mounted on the substrate mounting table,
The semiconductor manufacturing apparatus according to claim 1, wherein the heater has a plurality of heating zones, each of which can independently control a temperature, in a region exceeding a substrate arrangement region mounted on the substrate mounting table.

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