JP2004288708A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2004288708A
JP2004288708A JP2003075927A JP2003075927A JP2004288708A JP 2004288708 A JP2004288708 A JP 2004288708A JP 2003075927 A JP2003075927 A JP 2003075927A JP 2003075927 A JP2003075927 A JP 2003075927A JP 2004288708 A JP2004288708 A JP 2004288708A
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Japan
Prior art keywords
resin
semiconductor device
bonding
bonding wire
thread
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JP2003075927A
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Japanese (ja)
Inventor
Toru Maeda
前田　　徹
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Shinkawa Ltd
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Shinkawa Ltd
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Priority to JP2003075927A priority Critical patent/JP2004288708A/en
Publication of JP2004288708A publication Critical patent/JP2004288708A/en
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the distance between the bonding wires is kept surely. <P>SOLUTION: A semiconductor device 18 is held in a resin tank filled with liquid UV-curing resin and the inside of the resin tank is irradiated with condensed light. The light condensed point is then shifted from a first connecting point 44a on a bonding wire 38a to a second connecting point 44b on a second bonding wire 38b. The bonding wires 38 are then connected through UV-curing resin 46 cured like a thread. Consequently, a semiconductor device 18 where the distance between the bonding wires is kept surely regardless of the distance between the bonding wires can be obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、ボンディングパッドとボンディングリードとをそれぞれボンディングワイヤで接続した半導体装置に係り、特にボンディングワイヤを補強した半導体装置に関する。
【０００２】
【従来の技術】
従来より、半導体装置はワイヤボンディングがなされた後、樹脂によりモールドされている。これは、ワイヤボンディングがなされた後の半導体装置を所定の型にセットし、樹脂を流し込み、成型するものである。これにより、半導体素子およびボンディングワイヤは密封されて、保護されることになる。
【０００３】
しかしながら、この樹脂の流し込みの際に、樹脂の流れによりボンディングワイヤが押され、ボンディングワイヤの倒れや傾きが生じる。そして、隣接するボンディングワイヤ同士が互いに接触し、短絡が発生する。また、接触しない場合でも、ボンディングワイヤ間の相対的距離が変化することになる。信号線であるボンディングワイヤ間の距離が変化すると、信号線の間のインピーダンスに影響を与え、誤動作の原因となる。
【０００４】
このような問題を解決するために、特許文献１には、絶縁樹脂により複数のボンディングワイヤにまたがるブリッジを形成した半導体装置が開示されている。これは、ワイヤボンディング後に、半導体装置のボンディングワイヤの頂点近傍を粘度を調整した絶縁樹脂に漬けてから引き上げることにより、ボンディングワイヤ間にブリッジを形成するものである。これにより、樹脂の流し込みの際にも、ボンディングワイヤが倒れることなく、短絡やボンディングワイヤ間対距離の変化を防止できる。
【０００５】
【特許文献１】
特開平５−１２１４７４号公報
【０００６】
【発明が解決しようとする課題】
しかしながら、この方法は、絶縁樹脂の粘度を調整することにより、ボンディングワイヤ間にブリッジを形成している。そのため、ボンディングワイヤ間距離に応じて粘度を調整する必要があり、その調整を間違えたり、複数の異なるボンディングピッチを有する半導体装置の場合には、ブリッジを形成することができない。また、ボンディングワイヤ間距離が離れている場合は、樹脂の粘度を高くしなければならず、形成されるブリッジが重くなってしまう。そしてブリッジの重さによりボンディングワイヤが潰れてしまい、ボンディングワイヤ間距離が変化する場合がある。
【０００７】
そこで、本発明では、ボンディングワイヤ間距離が確実に保たれた半導体装置を提供することを目的とする。
【０００８】
【課題を解決するための手段】
本発明の半導体装置は、半導体素子上に複数設けられたボンディングパッドと基板に複数設けられたボンディングリードとをそれぞれボンディングワイヤで接続した半導体装置であって、ボンディングワイヤ上の第１接続点と他のボンディングワイヤ上の第２接続点とを接続する糸状の光硬化性樹脂を有することを特徴とする。
【０００９】
これにより、ボンディングワイヤ間距離に関係なくボンディングワイヤ間に軽量で強固な補強材を形成することができる。そのため、ボンディングワイヤ間距離が確実に保たれた半導体装置を提供できる。
【００１０】
ここで、光硬化性樹脂としては、可視光硬化性樹脂が好適であるが、紫外線硬化性樹脂などの他の光硬化性樹脂であってもよい。また、集光点を移動させる移動手段は、集光点そのものを移動させるものでもよいし、半導体装置を移動させることにより相対的に集光点を移動させるものであってもよい。
【００１１】
また、糸状樹脂の形状は、水平に伸びる平面的なものであってもよいし、垂直方向や斜め方向に伸びる３次元形状であってもよい。
【００１２】
【発明の実施の形態】
以下、図面を参照しながら本発明の実施の形態について説明する。
【００１３】
図１に、本発明の実施の形態であるボンディングワイヤ補強装置１０の概略図を示す。これは、光硬化性樹脂２２が充填された樹脂槽１２、樹脂槽内に設けられた載置ユニット１９、樹脂槽１２に光を照射するための照射ユニット１６、光の照射位置と角度を調整する移動ユニット１４に大別される。
【００１４】
樹脂槽１２は、光硬化性樹脂２２が充填された水槽である。その内部には、後述する半導体装置１８全体を浸すことができる量の光硬化性樹脂２２が充填されている。さらに、樹脂槽１２の内部には、載置ユニット１９が設けられている。載置ユニット１９は、半導体装置１８を載置、保持するための載置台２０とこれを上下移動させる上下移動機構２１を有している。載置台２０は、半導体装置１８が載置される台であり、半導体装置１８に対して着脱自在に保持する保持手段（図示せず）を有している。
【００１５】
なお、上下移動機構２１は、半導体装置１８を光硬化性樹脂２２の液面に対して相対的に移動させる機構であれば、他の機構でもよい。例えば、樹脂槽１２を上下に移動させる機構であってもよい。また、一時的に光硬化性樹脂を排出または注入し、液面の高さを変化させるものであってもよい。
【００１６】
また、本実施の形態においては、光硬化性樹脂としては、高分解能で硬化できる可視光硬化性樹脂であることが好適であるが、短時間で硬化可能な紫外線硬化性樹脂を用いてもよい。また、他の種類の光硬化性樹脂であってもよい。そして、その光硬化性樹脂の種類に応じて後述する光源の種類を変えればよい。
【００１７】
照射ユニット１６は、光源２８と光源２８からの光３２を集光する集光レンズ３０から構成されている。光源２８は、光硬化性樹脂２２を硬化させるための光３２が発せられており、その光３２は、集光レンズ３０により集光されて光硬化性樹脂２２に照射される。集光レンズ３０は、凸面レンズであり、図示しない固定手段により光源２８に対して固定されている。
【００１８】
この照射ユニット１６は、移動ユニット１４に取り付けられており、集光点の位置および照射角度の調整ができるようになっている。移動ユニット１４は、ＸＹＺテーブル２４と傾斜機構２６により構成されている。ＸＹＺテーブル２４は、傾斜機構２６を介して照射ユニット１６に接続されており、照射ユニット１６をＸＹＺ方向に移動させることができる。また、傾斜機構２６はＸ方向、Ｙ方向に伸びる軸を有しており、この軸をモータにより回転させて照射ユニット１６の傾斜角度を調整している。これらＸＹＺテーブル２４と傾斜機構２６は、ともに制御装置により、その駆動が制御されている。そして、この駆動により光３２の集光点を所望の位置に移動させることができる。
【００１９】
なお、本実施の形態においては、集光点の位置および照射角度を調整するために、移動ユニット１４を用いているが、半導体装置に対して相対的に集光点の位置を調整できれば、他の機構でもよい。例えば、載置台２０に水平移動機構を設け、載置台２０を水平移動させてもよい。また、光源２８と光硬化性樹脂２２の間に、駆動可能なミラーなどの光学系を設けて照射角度を調整してもよい。また、これ以外の機構でも、半導体装置に対して相対的に集光点の位置を調整できれば、他の機構でもよい。
【００２０】
次に、このボンディングワイヤ補強装置１０を用いて、半導体装置１８のボンディングワイヤ３８を補強する手順について図２を用いて説明する。図２は図１の一部の拡大図である。
【００２１】
ボンディングワイヤ３８の補強を行う場合は、まず、ワイヤボンディング後の半導体装置１８を載置台２０に載置する。この載置は、手動で行ってもよいし、自動で行ってもよい。例えば、ワイヤボンディング装置に本装置１０を併設または組み込み、ワイヤボンディング後の半導体装置１８を搬送装置で搬送し、載置台２０上に自動で載置してもよい。
【００２２】
次に、上下移動機構２１により載置台２０を移動させ、後述する糸状樹脂を形成したい箇所を光硬化性樹脂２２の液面近傍に移動させる。そして、照射ユニット１６により光硬化性樹脂２２内に集光した光３２を照射する。光源２８から照射された光３２は、集光レンズ３０により集光される。このとき、集光点３２ｂが液面近傍に位置するように照射する。
【００２３】
このように集光点３２ｂを液面近傍に位置するように照射することにより、高分解能で光硬化性樹脂２２を硬化させることができる。すなわち、光硬化性樹脂２２は、液面近傍のうち光３２が照射された部分が硬化するため、このように光３２を点状にして液面近傍に照射することにより、その近傍を点状に硬化させることができる。そして、この集光点３２ｂを移動ユニット１４により移動させることにより、所望の形状に硬化させることができる。
【００２４】
この集光点３２ｂの移動経路について図３を用いて説明する。図３は、ボンディングワイヤ補強装置１０を用いてボンディングワイヤを補強した半導体装置１８の一部拡大図である。
【００２５】
半導体装置１８は、半導体素子３６上に設けられた複数のボンディングパッド４０と基板上に設けられたボンディングリード４２とがそれぞれボンディングワイヤにより接続されている。
【００２６】
ボンディングワイヤ３８の補強を行う場合は、集光点３２ｂがボンディングワイヤ３８上の点である第１接続点４４ａにくるように照射ユニット１６を調整して、照射する。そして、集光点３２ｂをボンディングワイヤ３８ａ上の点である第１接続点４４ａから隣接するボンディングワイヤ３８ｂ上の点である第２接続点４４ｂまで移動させる。そして、集光点３２ｂを移動させると、集光点３２ｂの移動軌跡のみが硬化し、ボンディングワイヤ３８ａとボンディングワイヤ３８ｂとの間を接続する糸状樹脂４６が形成される。
【００２７】
そして、集光点３２ｂをさらに他のボンディングワイヤ３８ｃ上の点に移動させる。これを繰り返し、順次ボンディングワイヤ間に糸状樹脂４６を形成する。
【００２８】
なお、この糸状樹脂４６の形成開始点は、レーザー測距等の方法等の周知な手段により計測され、その結果に応じて上下移動機構１９および移動ユニット１４の駆動が制御される。また、集光点３２ｂの移動経路は、例えば、ワイヤボンディングの際に使用された軌道データ等から算出される。
【００２９】
この糸状樹脂の径は、３０から４０マイクロメータであることが望ましい。これは、約２０マイクロメータの金線で形成されるボンディングワイヤをつぶすことなく、補強するのに適した太さだからである。しかし、ボンディングワイヤの径や間隔などに応じて、他の径でもよい。例えば、ボンディングワイヤが潰れなければ１００マイクロメータ程度でもよい。また、ボンディングワイヤがモールドの際に倒れなければ１０マイクロメータ程度の径でもよい。なお、この糸状樹脂の径は、集光点３２ｂの面積を調整したり、集光点３２ｂをほぼ同一経路で複数回移動させること等により調整することができる。
【００３０】
このように糸状樹脂４６を形成することにより、モールドの樹脂流し込みの際にもボンディングワイヤが傾くことが無く、確実にボンディングワイヤ間距離が保たれた半導体装置を得ることができる。また、ボンディングワイヤ間距離およびボンディングワイヤの強度に応じて糸状樹脂の径を調整することにより、ボンディングワイヤが潰れることもない。
【００３１】
次に、半導体素子の上にさらに半導体素子を積み上げた、いわゆるスタックド素子を有する半導体装置のボンディングワイヤを補強する場合について図４を用いて説明する。
【００３２】
スタックド素子を有する半導体装置１８の場合、通常、ボンディングワイヤは立体的に配線される。すなわち、上側の半導体素子３６ａに接続されるボンディングワイヤ３８ａと下側の半導体素子３６ｂに接続されるボンディングワイヤ３８ｂは、異なる頂点高さを有している。この場合も、上述の場合と同様に、半導体装置１８を載置台２０に載置し、糸状樹脂の形成開始点が液面近傍にくるように半導体装置１８を移動させる。そして、集光レンズ３０で光源２８から照射される光３２を集光して、その集光点３２ｂが光硬化性樹脂２２の液面近傍になるように照射する。この状態で、集光点３２ｂを移動ユニット１４により移動させて、ボンディングワイヤ３８間に糸状樹脂４６を形成する。このとき、後述するように他のボンディングワイヤ３８で光３２が遮られる下側のボンディングワイヤ３８に関しては、照射ユニット１６を傾斜させて斜め方向から光３２を照射する。
【００３３】
この場合の集光点３２ｂの経路を図５を用いて説明する。図５は、スタックド素子を有する半導体装置１８のボンディングワイヤ３８に補強を行ったときの一部拡大図である。
【００３４】
ボンディングワイヤ３８ａ、３８ｂを補強する場合は、集光点３２ｂをボンディングワイヤ上の一点から他のボンディングワイヤ上の一点まで移動させて、下側糸状樹脂４６ｂと上側糸状樹脂４６ａを形成する。このとき、下側糸状樹脂４６ｂのＡ点は、真上から光３２を照射すると、上側のボンディングワイヤ３８ａで光３２が遮られてしまい、光硬化性樹脂２２を硬化することができない。このような真上から光３２を照射したときに他のボンディングワイヤ３８で遮られてしまう部分については、傾斜機構２６で照射ユニット１６を傾斜させて、斜め方向から照射する。斜め方向から照射することにより、Ａ点のように上側ボンディングワイヤ３８ａの下側にある点にも光３２を照射することができ、光硬化性樹脂２２を硬化させることができる。
【００３５】
また、上側のボンディングワイヤ３８ａと下側のボンディングワイヤ３８ｂを接続する垂直樹脂５０を形成してもよい。これは、照射ユニット１６を傾斜させて光を斜め方向から照射するとともに、上下移動機構２１により半導体装置１８を垂直移動させることにより形成することができる。このように、光を斜め方向から照射することにより、金線直下の樹脂も硬化させることができる。また、その際、半導体装置１８を垂直移動させることにより、３次元的な糸状樹脂を形成することができる。
【００３６】
このように光を斜め方向から照射できるようにすることにより、スタックド素子を有する半導体装置のように立体的にボンディングワイヤが配線されている場合でもボンディングワイヤの補強が確実にされた半導体装置を得ることができる。また、光を斜めから照射するとともに、半導体装置を３次元的に移動させることにより、３次元的な糸状樹脂を形成することができる。これにより縦方向の力にも強い半導体装置を得ることができる。これは、スタックド素子を有する半導体装置に限らず、図６に示すような千鳥配線がされている場合にも有効である。
【００３７】
また、図７に示すように上側糸状樹脂４６ａと下側糸状樹脂４６ｂとをさらに別の糸状樹脂４６ｃで接続して、いわゆるトラス構造にしてもよい。上側糸状樹脂４６ａと下側糸状樹脂４６ｂを接続する糸状樹脂４６ｃは、集光点３２ｂを移動させるとともに上下移動機構２１により半導体装置１８を垂直方向に移動させることにより形成することができる。そして、このような、上側糸状樹脂４６ａと下側糸状樹脂４６ｂを接続する糸状樹脂４６ｃを全体に形成することにより、上側から見た場合に、蜘蛛の巣状の糸状樹脂を形成することができる。
【００３８】
このように上側糸状樹脂４６ａと下側糸状樹脂４６ａとを接続する糸状樹脂４６ｃを形成することで、上側のボンディングワイヤ３８ａと下側のボンディングワイヤ３８ｂとの距離も確実に保つことができる。すなわち、横方向の力だけでなく、縦方向の力にも強い半導体装置となる。また、糸状樹脂をいわゆるトラス構造とすることで、曲げモーメントを受けにくくなり、変形しにくくなる。そのため、より補強効果が高まった半導体装置を得ることができる。
【００３９】
なお、本実施の形態では、糸状樹脂をトラス構造としたが、他の形状であってもよい。例えば、いわゆるラーメン構造のようなものであってもよい。また、上側糸状樹脂４６ａと下側糸状樹脂４６ｂを形成せずに、上側のボンディングワイヤ３８ａと下側のボンディングワイヤ３８ｂとを接続する糸状樹脂４６ｃのみのであってもよい。また、さらに上述した垂直上の樹脂を形成してもよい。このような形状であっても、横方向、縦方向の力に強く、上側のボンディングワイヤ３８ａと上側のボンディングワイヤ３８ａとの距離が確実に保たれた半導体装置を得ることができる。
【００４０】
また、本実施の形態では、光硬化性樹脂の液面近傍を硬化させる光造形の技術を応用しているが、例えば、内部硬化型マイクロ光造形法や２光子吸収を利用した光造形法などの技術を応用してもよい。
【００４１】
内部硬化型マイクロ光造形法は、専用の光硬化性樹脂の内部に所定の周波数を有するレーザー光を集光し、樹脂内部の一点のみを選択的に硬化させるものである。また、２光子吸収を利用した光造形法は、チタン・サファイヤレーザ等の近赤外パルス光を集光することにより２光子吸収を誘起し、光強度の大きい焦点近傍の光硬化性樹脂をピンポイント的に硬化させるものである。
【００４２】
そのため、これらの技術を応用することにより半導体装置１８を光硬化性樹脂２２内に浸した状態で糸状樹脂を形成することができる。糸状樹脂を形成するには、集光点３２ｂのみを移動させればよい。また、これらの技術を応用することにより、より高分解能な糸状樹脂を形成することができる。より微細な半導体装置であっても、確実にボンディングワイヤが補強することができる。そのため、ボンディングワイヤ間距離が確実に保たれた微細な半導体装置を得ることができる。
【００４３】
【発明の効果】
このように本発明によれば、ボンディングワイヤ間距離に関係なく確実にボンディングワイヤ間に軽量で強固な補強材を形成することができる。そのため、ボンディングワイヤ間距離が確実に保たれた半導体装置を得ることができる。
【図面の簡単な説明】
【図１】本発明の実施の形態であるボンディングワイヤ補強装置の概略図である。
【図２】図１の一部拡大図である。
【図３】ボンディングワイヤを補強した半導体装置の一部拡大図である。
【図４】スタックド素子を有する半導体装置のボンディングワイヤを補強する際のボンディングワイヤ補強装置の一部拡大図である。
【図５】スタックド素子を有する半導体装置のボンディングワイヤに補強した半導体装置の一部拡大図である。
【図６】千鳥配線された半導体装置のボンディングワイヤに補強した半導体装置の一部拡大図である。
【図７】スタックド素子を有する半導体装置のボンディングワイヤに補強した半導体装置の一部拡大図である。
【符号の説明】
１０ ボンディングワイヤ補強装置
１２ 樹脂槽
１４ 移動ユニット
１８ 半導体装置
２２ 光硬化性樹脂
２８ 光源
３０ 集光レンズ
３２ｂ 集光点
３６ 半導体素子
３８ ボンディングワイヤ
４４ａ 第１接続点
４４ｂ 第２接続点
４６ 糸状樹脂[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device in which bonding pads and bonding leads are connected by bonding wires, and more particularly to a semiconductor device in which bonding wires are reinforced.
[0002]
[Prior art]
Conventionally, semiconductor devices are molded with resin after wire bonding. In this method, the semiconductor device after wire bonding is set in a predetermined mold, a resin is poured into the mold, and molding is performed. Thereby, the semiconductor element and the bonding wire are sealed and protected.
[0003]
However, when the resin is poured, the bonding wire is pushed by the flow of the resin, and the bonding wire falls and tilts. Then, adjacent bonding wires come into contact with each other, causing a short circuit. Moreover, even when not contacting, the relative distance between bonding wires will change. If the distance between the bonding wires that are signal lines changes, the impedance between the signal lines is affected, causing malfunction.
[0004]
In order to solve such a problem, Patent Document 1 discloses a semiconductor device in which a bridge extending over a plurality of bonding wires is formed by an insulating resin. In this method, after wire bonding, the vicinity of the apex of the bonding wire of the semiconductor device is dipped in an insulating resin whose viscosity is adjusted and then pulled up to form a bridge between the bonding wires. As a result, even when the resin is poured, the bonding wire does not fall down, and a short circuit or a change in the distance between the bonding wires can be prevented.
[0005]
[Patent Document 1]
JP-A-5-121474 [0006]
[Problems to be solved by the invention]
However, this method forms a bridge between bonding wires by adjusting the viscosity of the insulating resin. Therefore, it is necessary to adjust the viscosity according to the distance between the bonding wires. In the case of a semiconductor device having a wrong adjustment or a plurality of different bonding pitches, a bridge cannot be formed. Further, when the distance between the bonding wires is long, the viscosity of the resin must be increased, and the formed bridge becomes heavy. The bonding wire may be crushed by the weight of the bridge, and the distance between the bonding wires may change.
[0007]
Accordingly, an object of the present invention is to provide a semiconductor device in which the distance between bonding wires is reliably maintained.
[0008]
[Means for Solving the Problems]
The semiconductor device of the present invention is a semiconductor device in which a plurality of bonding pads provided on a semiconductor element and a plurality of bonding leads provided on a substrate are connected by bonding wires, respectively, and the first connection point on the bonding wire and the like It has the thread-like photocurable resin which connects the 2nd connection point on this bonding wire.
[0009]
As a result, a lightweight and strong reinforcing material can be formed between the bonding wires regardless of the distance between the bonding wires. Therefore, it is possible to provide a semiconductor device in which the distance between bonding wires is reliably maintained.
[0010]
Here, a visible light curable resin is suitable as the photocurable resin, but other photocurable resins such as an ultraviolet curable resin may be used. Further, the moving means for moving the condensing point may move the condensing point itself, or may move the condensing point relatively by moving the semiconductor device.
[0011]
Further, the shape of the thread-like resin may be a planar one that extends horizontally, or may be a three-dimensional shape that extends vertically or obliquely.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0013]
FIG. 1 shows a schematic view of a bonding wire reinforcing device 10 according to an embodiment of the present invention. This is a resin tank 12 filled with a photocurable resin 22, a mounting unit 19 provided in the resin tank, an irradiation unit 16 for irradiating the resin tank 12 with light, and adjusting the light irradiation position and angle. The mobile unit 14 is roughly classified.
[0014]
The resin tank 12 is a water tank filled with a photocurable resin 22. The inside thereof is filled with a photocurable resin 22 in an amount capable of immersing the entire semiconductor device 18 described later. Further, a mounting unit 19 is provided inside the resin tank 12. The mounting unit 19 includes a mounting table 20 for mounting and holding the semiconductor device 18 and a vertical movement mechanism 21 that moves the semiconductor device 18 up and down. The mounting table 20 is a table on which the semiconductor device 18 is mounted, and has holding means (not shown) that is detachably held with respect to the semiconductor device 18.
[0015]
The vertical movement mechanism 21 may be another mechanism as long as it moves the semiconductor device 18 relative to the liquid level of the photocurable resin 22. For example, a mechanism for moving the resin tank 12 up and down may be used. Further, the photocurable resin may be temporarily discharged or injected to change the liquid level.
[0016]
In the present embodiment, the photocurable resin is preferably a visible light curable resin that can be cured with high resolution, but an ultraviolet curable resin that can be cured in a short time may be used. . Further, other types of photocurable resins may be used. And what is necessary is just to change the kind of light source mentioned later according to the kind of the photocurable resin.
[0017]
The irradiation unit 16 includes a light source 28 and a condenser lens 30 that condenses the light 32 from the light source 28. The light source 28 emits light 32 for curing the photocurable resin 22, and the light 32 is collected by the condenser lens 30 and irradiated onto the photocurable resin 22. The condensing lens 30 is a convex lens, and is fixed to the light source 28 by fixing means (not shown).
[0018]
The irradiation unit 16 is attached to the moving unit 14 so that the position of the condensing point and the irradiation angle can be adjusted. The moving unit 14 includes an XYZ table 24 and a tilt mechanism 26. The XYZ table 24 is connected to the irradiation unit 16 via the tilt mechanism 26, and can move the irradiation unit 16 in the XYZ directions. Further, the tilt mechanism 26 has an axis extending in the X direction and the Y direction, and the tilt angle of the irradiation unit 16 is adjusted by rotating the axis with a motor. The driving of both the XYZ table 24 and the tilt mechanism 26 is controlled by a control device. And the condensing point of the light 32 can be moved to a desired position by this drive.
[0019]
In this embodiment, the moving unit 14 is used to adjust the position and the irradiation angle of the condensing point. However, as long as the position of the condensing point can be adjusted relative to the semiconductor device, there are other cases. The mechanism may be used. For example, the mounting table 20 may be provided with a horizontal movement mechanism, and the mounting table 20 may be moved horizontally. Further, an irradiation angle may be adjusted by providing an optical system such as a driveable mirror between the light source 28 and the photocurable resin 22. In addition, other mechanisms may be used as long as the position of the condensing point can be adjusted relative to the semiconductor device.
[0020]
Next, a procedure for reinforcing the bonding wire 38 of the semiconductor device 18 using the bonding wire reinforcing device 10 will be described with reference to FIG. FIG. 2 is an enlarged view of a part of FIG.
[0021]
When reinforcing the bonding wire 38, first, the semiconductor device 18 after wire bonding is mounted on the mounting table 20. This placement may be performed manually or automatically. For example, the present apparatus 10 may be installed or incorporated in a wire bonding apparatus, and the semiconductor device 18 after the wire bonding may be transported by a transport device and automatically mounted on the mounting table 20.
[0022]
Next, the mounting table 20 is moved by the up-and-down moving mechanism 21, and a place where a filamentous resin to be described later is to be formed is moved to the vicinity of the liquid surface of the photocurable resin 22. And the light 32 condensed in the photocurable resin 22 by the irradiation unit 16 is irradiated. The light 32 emitted from the light source 28 is condensed by the condenser lens 30. At this time, it irradiates so that the condensing point 32b may be located in the liquid surface vicinity.
[0023]
Thus, by irradiating so that the condensing point 32b may be located in the vicinity of a liquid level, the photocurable resin 22 can be hardened with high resolution. That is, in the photocurable resin 22, the portion irradiated with the light 32 in the vicinity of the liquid surface is cured. Thus, by irradiating the liquid surface with the light 32 in a dot shape, the vicinity thereof is dotted. Can be cured. Then, by moving the light condensing point 32b by the moving unit 14, it can be cured into a desired shape.
[0024]
The movement path of this condensing point 32b is demonstrated using FIG. FIG. 3 is a partially enlarged view of the semiconductor device 18 in which the bonding wire is reinforced using the bonding wire reinforcing device 10.
[0025]
In the semiconductor device 18, a plurality of bonding pads 40 provided on the semiconductor element 36 and bonding leads 42 provided on the substrate are respectively connected by bonding wires.
[0026]
When the bonding wire 38 is reinforced, the irradiation unit 16 is adjusted so that the condensing point 32b comes to the first connection point 44a which is a point on the bonding wire 38, and irradiation is performed. And the condensing point 32b is moved from the 1st connection point 44a which is a point on the bonding wire 38a to the 2nd connection point 44b which is a point on the adjacent bonding wire 38b. Then, when the condensing point 32b is moved, only the moving locus of the condensing point 32b is cured, and the thread-like resin 46 connecting the bonding wire 38a and the bonding wire 38b is formed.
[0027]
Then, the condensing point 32b is further moved to a point on another bonding wire 38c. This process is repeated to form a thread resin 46 between the bonding wires.
[0028]
The formation start point of the thread-like resin 46 is measured by a known means such as a laser distance measuring method, and the driving of the vertical movement mechanism 19 and the movement unit 14 is controlled according to the result. The moving path of the condensing point 32b is calculated from, for example, trajectory data used at the time of wire bonding.
[0029]
The diameter of the filamentous resin is desirably 30 to 40 micrometers. This is because the thickness is suitable for reinforcement without crushing the bonding wire formed of a gold wire of about 20 micrometers. However, other diameters may be used depending on the diameter and interval of the bonding wires. For example, if the bonding wire is not crushed, it may be about 100 micrometers. Further, if the bonding wire does not fall during molding, the diameter may be about 10 micrometers. In addition, the diameter of this thread-like resin can be adjusted by adjusting the area of the condensing point 32b, or moving the condensing point 32b a plurality of times along substantially the same route.
[0030]
By forming the thread-like resin 46 in this manner, the bonding wire is not inclined even when the resin is poured into the mold, and a semiconductor device in which the distance between the bonding wires is reliably maintained can be obtained. Further, the bonding wires are not crushed by adjusting the diameter of the thread-like resin according to the distance between the bonding wires and the strength of the bonding wires.
[0031]
Next, a case where a bonding wire of a semiconductor device having a so-called stacked element in which semiconductor elements are further stacked on the semiconductor element is reinforced will be described with reference to FIG.
[0032]
In the case of the semiconductor device 18 having stacked elements, the bonding wires are usually wired three-dimensionally. That is, the bonding wire 38a connected to the upper semiconductor element 36a and the bonding wire 38b connected to the lower semiconductor element 36b have different apex heights. Also in this case, similarly to the above-described case, the semiconductor device 18 is mounted on the mounting table 20, and the semiconductor device 18 is moved so that the formation start point of the thread-like resin is near the liquid surface. Then, the light 32 emitted from the light source 28 is condensed by the condensing lens 30 and irradiated so that the condensing point 32 b is in the vicinity of the liquid surface of the photocurable resin 22. In this state, the condensing point 32 b is moved by the moving unit 14 to form the thread-like resin 46 between the bonding wires 38. At this time, as will be described later, with respect to the lower bonding wire 38 where the light 32 is blocked by another bonding wire 38, the irradiation unit 16 is inclined and the light 32 is irradiated from an oblique direction.
[0033]
The path | route of the condensing point 32b in this case is demonstrated using FIG. FIG. 5 is a partially enlarged view when the bonding wire 38 of the semiconductor device 18 having stacked elements is reinforced.
[0034]
When reinforcing the bonding wires 38a and 38b, the condensing point 32b is moved from one point on the bonding wire to one point on the other bonding wire to form the lower thread-like resin 46b and the upper thread-like resin 46a. At this time, when the light 32 is irradiated from right above the point A of the lower thread-like resin 46b, the light 32 is blocked by the upper bonding wire 38a, and the photocurable resin 22 cannot be cured. With respect to such a portion that is blocked by the other bonding wire 38 when the light 32 is irradiated from directly above, the irradiation unit 16 is inclined by the inclination mechanism 26 and irradiated from an oblique direction. By irradiating from an oblique direction, the light 32 can be irradiated to a point below the upper bonding wire 38a like the point A, and the photo-curable resin 22 can be cured.
[0035]
Alternatively, the vertical resin 50 that connects the upper bonding wire 38a and the lower bonding wire 38b may be formed. This can be formed by tilting the irradiation unit 16 and irradiating light from an oblique direction, and vertically moving the semiconductor device 18 by the vertical movement mechanism 21. Thus, by irradiating light from an oblique direction, the resin directly under the gold wire can be cured. At that time, a three-dimensional thread-like resin can be formed by vertically moving the semiconductor device 18.
[0036]
Thus, by allowing light to be irradiated from an oblique direction, a semiconductor device in which the bonding wire is reliably reinforced even when the bonding wire is three-dimensionally provided like a semiconductor device having a stacked element is obtained. be able to. Further, a three-dimensional thread-like resin can be formed by irradiating light obliquely and moving the semiconductor device three-dimensionally. Thereby, it is possible to obtain a semiconductor device that is resistant to longitudinal force. This is effective not only for semiconductor devices having stacked elements, but also for staggered wiring as shown in FIG.
[0037]
Further, as shown in FIG. 7, the upper thread resin 46a and the lower thread resin 46b may be connected by another thread resin 46c to form a so-called truss structure. The thread resin 46c connecting the upper thread resin 46a and the lower thread resin 46b can be formed by moving the condensing point 32b and moving the semiconductor device 18 in the vertical direction by the vertical movement mechanism 21. Then, by forming the entire thread-like resin 46c connecting the upper-side thread-like resin 46a and the lower-side thread-like resin 46b as described above, a spider web-like thread-like resin can be formed when viewed from above. .
[0038]
By forming the thread-like resin 46c that connects the upper thread-like resin 46a and the lower-side thread-like resin 46a in this way, the distance between the upper bonding wire 38a and the lower bonding wire 38b can be reliably maintained. That is, the semiconductor device is strong not only in the lateral direction but also in the longitudinal direction. Moreover, by making the filamentous resin a so-called truss structure, it becomes difficult to receive a bending moment and is difficult to deform. Therefore, it is possible to obtain a semiconductor device having a further enhanced reinforcing effect.
[0039]
In the present embodiment, the thread-like resin has a truss structure, but other shapes may be used. For example, a so-called ramen structure may be used. Further, only the thread-like resin 46c that connects the upper bonding wire 38a and the lower bonding wire 38b without forming the upper thread-like resin 46a and the lower thread-like resin 46b may be used. Further, the above-described vertical resin may be formed. Even with such a shape, it is possible to obtain a semiconductor device that is strong in lateral and vertical forces and in which the distance between the upper bonding wire 38a and the upper bonding wire 38a is reliably maintained.
[0040]
In the present embodiment, the optical modeling technique for curing the vicinity of the liquid surface of the photocurable resin is applied. For example, an internal curing type micro stereolithography method or a stereolithography method using two-photon absorption. The technology may be applied.
[0041]
The internal curing type micro stereolithography method condenses laser light having a predetermined frequency inside a dedicated photocurable resin and selectively cures only one point inside the resin. The stereolithography method using two-photon absorption induces two-photon absorption by focusing near-infrared pulsed light such as titanium and sapphire laser, and pines a photo-curable resin near the focal point where the light intensity is high. It is cured in a point manner.
[0042]
Therefore, by applying these techniques, the filamentous resin can be formed in a state where the semiconductor device 18 is immersed in the photocurable resin 22. In order to form the thread-like resin, it is only necessary to move the condensing point 32b. Further, by applying these techniques, a higher-resolution thread-like resin can be formed. Even in a finer semiconductor device, the bonding wire can be reliably reinforced. Therefore, a fine semiconductor device in which the distance between bonding wires is reliably maintained can be obtained.
[0043]
【The invention's effect】
As described above, according to the present invention, it is possible to reliably form a lightweight and strong reinforcing material between bonding wires regardless of the distance between bonding wires. Therefore, a semiconductor device in which the distance between bonding wires is reliably maintained can be obtained.
[Brief description of the drawings]
FIG. 1 is a schematic view of a bonding wire reinforcing device according to an embodiment of the present invention.
FIG. 2 is a partially enlarged view of FIG.
FIG. 3 is a partially enlarged view of a semiconductor device in which a bonding wire is reinforced.
FIG. 4 is a partially enlarged view of a bonding wire reinforcing device when reinforcing bonding wires of a semiconductor device having stacked elements.
FIG. 5 is a partially enlarged view of a semiconductor device reinforced with bonding wires of a semiconductor device having stacked elements.
FIG. 6 is an enlarged view of a part of a semiconductor device reinforced with bonding wires of a staggered wiring semiconductor device.
FIG. 7 is a partially enlarged view of a semiconductor device reinforced with bonding wires of a semiconductor device having stacked elements.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Bonding wire reinforcement apparatus 12 Resin tank 14 Moving unit 18 Semiconductor device 22 Photocurable resin 28 Light source 30 Condensing lens 32b Condensing point 36 Semiconductor element 38 Bonding wire 44a 1st connection point 44b 2nd connection point 46 Filamentous resin

Claims (2)

半導体素子上に複数設けられたボンディングパッドと基板に複数設けられたボンディングリードとをそれぞれボンディングワイヤで接続した半導体装置であって、
ボンディングワイヤ上の第１接続点と他のボンディングワイヤ上の第２接続点とを接続する糸状の光硬化性樹脂である糸状樹脂を有することを特徴とする半導体装置。A semiconductor device in which a plurality of bonding pads provided on a semiconductor element and a plurality of bonding leads provided on a substrate are connected with bonding wires, respectively.
A semiconductor device comprising: a thread-like resin that is a thread-like photocurable resin that connects a first connection point on a bonding wire and a second connection point on another bonding wire. 請求項１に記載の半導体装置であって、
糸状樹脂は、３次元形状であることを特徴とする半導体装置。The semiconductor device according to claim 1,
A semiconductor device, wherein the filamentous resin has a three-dimensional shape.
JP2003075927A 2003-03-19 2003-03-19 Semiconductor device Withdrawn JP2004288708A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220115253A1 (en) * 2020-10-14 2022-04-14 Emage Equipment Pte. Ltd. Loop height measurement of overlapping bond wires

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220115253A1 (en) * 2020-10-14 2022-04-14 Emage Equipment Pte. Ltd. Loop height measurement of overlapping bond wires
US11721571B2 (en) * 2020-10-14 2023-08-08 Emage Vision Pte. Ltd. Loop height measurement of overlapping bond wires

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