JP2004258364A5 - - Google Patents

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Publication number
JP2004258364A5
JP2004258364A5 JP2003049398A JP2003049398A JP2004258364A5 JP 2004258364 A5 JP2004258364 A5 JP 2004258364A5 JP 2003049398 A JP2003049398 A JP 2003049398A JP 2003049398 A JP2003049398 A JP 2003049398A JP 2004258364 A5 JP2004258364 A5 JP 2004258364A5
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JP
Japan
Prior art keywords
layer
light
light utilization
conversion layer
electrode layer
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JP2003049398A
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Japanese (ja)
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JP2004258364A (en
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Priority to JP2003049398A priority Critical patent/JP2004258364A/en
Priority claimed from JP2003049398A external-priority patent/JP2004258364A/en
Publication of JP2004258364A publication Critical patent/JP2004258364A/en
Publication of JP2004258364A5 publication Critical patent/JP2004258364A5/ja
Withdrawn legal-status Critical Current

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Claims (15)

電力と光学的状態とが関連する変換層と、
この変換層に関わる電極層とを有する光利用装置であって、
前記電極層の外界に向いた側の少なくとも一部は、モス・アイ構造を備えた光吸収領域である光利用装置。A conversion layer in which power and optical state are related;
A light utilization device having an electrode layer related to the conversion layer,
At least a part of the electrode layer facing the outside is a light utilization device that is a light absorption region having a moth-eye structure. 請求項１において、前記光吸収領域には、円錐または角錐状の微細構造が複数形成されている光利用装置。  2. The light utilization apparatus according to claim 1, wherein a plurality of conical or pyramidal microstructures are formed in the light absorption region. 請求項２において、前記微細構造は５０ｎｍ〜１００ｎｍ程度のピッチで配置されている光利用装置。  3. The light utilization apparatus according to claim 2, wherein the fine structures are arranged at a pitch of about 50 nm to 100 nm. 請求項２において、前記微細構造のアスペクト比は１以上である光利用装置。  3. The light utilization apparatus according to claim 2, wherein the fine structure has an aspect ratio of 1 or more. 請求項１において、前記光吸収領域は、前記変換層に面している光利用装置。  The light utilization device according to claim 1, wherein the light absorption region faces the conversion layer. 請求項１において、前記電極層は金属製である光利用装置。  The light utilization apparatus according to claim 1, wherein the electrode layer is made of metal. 請求項１において、前記変換層は、前記電極層から電力を供給することにより発光する自発光層である光利用装置。  The light utilization device according to claim 1, wherein the conversion layer is a self-luminous layer that emits light when power is supplied from the electrode layer. 請求項７において、前記変換層は、ＥＬ層である光利用装置。  8. The light utilization device according to claim 7, wherein the conversion layer is an EL layer. 請求項１において、前記変換層は、前記電極層から電力を供給することにより相変化するスイッチング層である光利用装置。  2. The light utilization apparatus according to claim 1, wherein the conversion layer is a switching layer that changes phase by supplying electric power from the electrode layer. 請求項９において、前記変換層は、液晶層である光利用装置。  The light utilization device according to claim 9, wherein the conversion layer is a liquid crystal layer. 請求項１において、前記変換層は、光により電力を発生する発電層である光利用装置。  The light utilization apparatus according to claim 1, wherein the conversion layer is a power generation layer that generates electric power by light. 電力を供給することにより発光する自発光層と、
この自発光層に関わる金属製の電極層とを有する表示体であって、
前記電極層の前記変換層に面した側の少なくとも一部は、モス・アイ構造を備えた光吸収領域である表示体。A self-luminous layer that emits light by supplying power;
A display body having a metal electrode layer related to the self-luminous layer,
At least a part of the electrode layer facing the conversion layer is a display body that is a light absorption region having a moth-eye structure. 請求項１２において、前記自発光層は、ＥＬ層である表示体。  The display body according to claim 12, wherein the self-luminous layer is an EL layer. 請求項１２に記載の表示体が２次元に配置された表示パネル。  A display panel in which the display body according to claim 12 is two-dimensionally arranged. 請求項１４に記載の表示パネルと、
前記表示体の発光層に電力を供給して画像を表示する駆動装置とを有する表示装置。A display panel according to claim 14,
A display device comprising: a driving device that supplies power to the light emitting layer of the display body to display an image.
JP2003049398A 2003-02-26 2003-02-26 Light-using device, display body, power generating body, and manufacturing method of light-using device Withdrawn JP2004258364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003049398A JP2004258364A (en) 2003-02-26 2003-02-26 Light-using device, display body, power generating body, and manufacturing method of light-using device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003049398A JP2004258364A (en) 2003-02-26 2003-02-26 Light-using device, display body, power generating body, and manufacturing method of light-using device

Publications (2)

Publication Number Publication Date
JP2004258364A JP2004258364A (en) 2004-09-16
JP2004258364A5 true JP2004258364A5 (en) 2005-09-08

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JP2003049398A Withdrawn JP2004258364A (en) 2003-02-26 2003-02-26 Light-using device, display body, power generating body, and manufacturing method of light-using device

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663653B2 (en) 2005-02-24 2010-02-16 Seiko Epson Corporation Optical head and image forming apparatus incorporating the same
US20070222923A1 (en) 2005-12-28 2007-09-27 Jian Wang Electronic device having black layers
JP2008034687A (en) * 2006-07-31 2008-02-14 Toppan Printing Co Ltd Photoelectric conversion element
JP2009026670A (en) * 2007-07-23 2009-02-05 Seiko Epson Corp Electro-optical device, electronic equipment, and manufacturing method of electro-optical device
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
US8003425B2 (en) 2008-05-14 2011-08-23 International Business Machines Corporation Methods for forming anti-reflection structures for CMOS image sensors
JP2010286615A (en) * 2009-06-10 2010-12-24 Sony Corp Method for manufacturing optical component, optical component, method for manufacturing display device, and the display device
WO2010150615A1 (en) * 2009-06-23 2010-12-29 シャープ株式会社 Display device and multilayer substrate
EP2282360A1 (en) * 2009-08-06 2011-02-09 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Opto-electric device and method for manufacturing the same
JP5659551B2 (en) * 2010-04-28 2015-01-28 ソニー株式会社 Transparent conductive element, input device, and display device
KR101804360B1 (en) * 2011-03-21 2017-12-05 삼성디스플레이 주식회사 Organic light emitting display apparatus
KR20120130988A (en) * 2011-05-24 2012-12-04 삼성전기주식회사 Electronic paper display device and manufacturing method thereof
JP6528039B2 (en) * 2013-11-11 2019-06-12 コニカ ミノルタ ラボラトリー ユー．エス．エー．，インコーポレイテッド Broadband light emitting device with electrodes of lattice structure
CN111785836B (en) * 2020-06-27 2022-12-16 上海师范大学 Solar cell with hole transport layer with moth eye structure and preparation method thereof
WO2023089655A1 (en) * 2021-11-16 2023-05-25 日本電信電話株式会社 Semiconductor photoelectrode

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