JP2004247344A - Method of forming wiring, wiring for organic active element, organic active device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of forming wiring by which wiring is connected satisfactorily to an organic active element by preventing the deterioration of the element and the service life of the element from becoming shorter, and also to provide wiring for organic active element formed by the method, an organic active device, and electronic equipment. <P>SOLUTION: The organic active element 11 is provided with a first substrate 10 on which the element 11 is formed, a second substrate 12 disposed to face the surface of the substrate 10 on which the element 11 is formed, and a holding member 13 which holds a space containing at least the element 11 and formed between the first and second substrates 10 and 12 in a tightly closed state. The element 11 is also provided with wiring 14 formed on the first substrate 10 to electrically connect the element 11 to external terminals 18 provided on the outside of the space 16. The wiring 14 is provided with organic wiring 14b composed of an organic material, and inorganic wiring 14a composed of an inorganic material. The organic wiring 14b is conductively connected to the element 11 in the space 16, and the inorganic wiring 14a is conductively connected to the external terminals 18. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method of forming a wiring, a wiring of an organic active element, an organic active device, and an electronic apparatus.
[0002]
[Prior art]
2. Description of the Related Art In recent years, organic active devices using organic materials composed of organic polymers and organic low molecules have been actively researched. An organic transistor, which is an example of an organic active element, has a gate electrode layer made of nickel, a gate insulating layer made of SiO ₂ , a source electrode and a drain electrode made of palladium, and an organic semiconductor thin film such as pentacene on which a channel layer is formed. It was formed.
Such organic active elements not only deteriorate due to contact with oxygen and moisture, but also reduce their reliability and shorten their service life. In general, it is formed so as to cover an element (for example, see Patent Document 1).
[0003]
In this organic active element, an operation circuit for operating the organic active element is provided outside the passivation, and a wiring for transmitting input / output signals is formed between the organic active element and the operation circuit. Have been. Therefore, an input signal of the drive circuit is input to the organic active element through the wiring, and after the organic active element performs a predetermined process, an output signal is transmitted to the drive circuit through the wiring.
For example, in the case of the above organic transistor, the source electrode, the drain electrode, and the gate electrode are each connected to a driving circuit through a wiring, and charge is applied from the driving circuit to the gate electrode through the wiring. As a result, current flows from the source electrode to the drain electrode, and a desired switching operation is performed.
[0004]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 08-306955
[Problems to be solved by the invention]
By the way, the above-mentioned wiring connects the operation circuit outside the passivation and the organic active element. If the passivation is simply formed so as to cover the organic active element, oxygen and moisture enter from outside the passivation. In addition, there is a problem that the organic active element is deteriorated and its life is shortened. In connection between the wiring and the organic active element, it is necessary to select a suitable material and to attain a state in which good connectivity is obtained.
[0006]
The present invention has been made in view of the above-described circumstances, and shows a method of forming a wiring as a method of preventing deterioration and shortening of the life of an organic active element and satisfactorily connecting a wiring and an organic active element. It is still another object of the present invention to provide an organic active element wiring, an organic active device, and an electronic device using the wiring forming method.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the present invention employs the following solutions.
That is, the method for forming a wiring of the present invention is a method for forming a wiring having an organic wiring made of an organic material and an inorganic wiring made of an inorganic material on a substrate,
The step of forming an organic wiring is performed after the step of forming an inorganic wiring.
Generally, when an inorganic wiring is formed from an inorganic material such as a metal, the substrate is exposed to a high-temperature atmosphere such as a CVD method (chemical vapor deposition), and the inorganic wiring is formed on the substrate. On the other hand, the organic material has a property that cannot withstand an extremely high temperature (about 300 ° C. or higher).
Therefore, according to the present invention, since the organic wiring is formed after the step of forming the inorganic wiring, it is possible to form the organic wiring without being affected by the ultra-high temperature state when forming the inorganic wiring. Become.
[0008]
Further, the wiring of the organic active element of the present invention includes: a first substrate on which the organic active element is formed; a second substrate disposed opposite to the surface of the first substrate on which the organic active element is formed; A holding member for holding a space including at least the organic active element between the substrate and the second substrate in a sealed state, and electrically connecting the organic active element formed on the first substrate to an external terminal outside the space; Wiring, the wiring includes an organic wiring made of an organic material and an inorganic wiring made of an inorganic material, the organic wiring is conductively connected to the organic active element in the space, and the inorganic wiring is conductively connected to the external terminal. It is characterized by the following.
Here, the organic active element means an active element including an organic element such as a molecular single electron transistor, an organic transistor, an organic thin film transistor, an organic spin electronics element, a quantum computer, a molecular processor, and an organic storage.
The first substrate refers to a substrate of a predetermined material such as a glass substrate, a thin film, an insulating substrate, or a silicon wafer, or a circuit substrate on which a wiring layer, an insulating film, a switching element, and the like are formed in advance.
The second substrate is made of various materials such as glass, an organic material, an insulating material, and a metal, and protects the organic active element from various states caused by deterioration and molecular destruction of the organic active element. For example, the organic active element is protected by preventing the transmission of impact, the transmission of heat, the invasion of oxygen or moisture, and the like from the outside of the second substrate to the organic active element side.
The holding member is a member provided around the second substrate without contacting the organic active element. The holding member holds the space between the first substrate and the second substrate in a sealed state, It has a function of an adhesive for bonding the substrate and the second substrate.
The external terminal is an input / output terminal of an operation circuit having a function related to the operation of the organic active element.
In addition, the organic wiring is formed of various organic materials for making a good connection with the organic active element.
Further, the inorganic wiring is formed of various inorganic materials for making a good connection with an external terminal.
Therefore, according to the present invention, the organic wiring is held together with the organic active element in the space sealed by the first substrate, the second substrate, and the holding member, so that the impact is transmitted to the organic wiring and the organic active element. Thus, heat transmission, intrusion of oxygen and moisture, and the like can be prevented, and organic wirings and organic active elements can be protected. Further, it is possible to prevent the organic wiring and the organic active element from deteriorating due to the intrusion of oxygen and moisture, and to achieve a long life. In addition, since both the organic wiring and the organic active element are made of organic materials, good conductivity can be obtained in the connection between the two. In addition, since the external terminals are disposed outside the space, the connection between the inorganic wiring and the external terminals does not require passivation of a sealed space or the like, and the connection between the inorganic wiring and the external terminals can be easily performed. It becomes possible.
[0009]
The wiring of the organic active element according to the present invention is the wiring of the organic active element described above, and is characterized in that the boundary between the organic wiring and the inorganic wiring is located in the space.
Therefore, according to the present invention, since the organic wiring and the inorganic wiring are connected in a closed space, transmission of shock, transmission of heat, penetration of oxygen and moisture, etc. to the organic wiring is prevented, and The connection with the inorganic wiring can be protected, and good conductivity can be obtained in the connection between the two. Further, deterioration of the organic wiring due to intrusion of oxygen or moisture can be prevented, and a longer life can be achieved. Here, the connection state between the organic wiring and the inorganic wiring is preferably an ohmic junction.
[0010]
The wiring of the organic active element according to the present invention is the wiring of the organic active element described above, and the inorganic wiring is formed in a concave portion formed in the first substrate.
Here, the concave portion means a portion formed as desired on the surface of the first substrate on which the organic active element is formed. The method of forming the concave portion may be, for example, a concave portion formed by cutting the first substrate, a convex portion of a desired material provided on the first substrate, and a concave portion formed relatively to the convex portion. May be.
Therefore, according to the present invention, since the inorganic wiring is formed in the concave portion, even when a pressing force is applied to the inorganic wiring of the portion on the contact surface between the portion such as the holding member and the inorganic wiring, Disconnection of the inorganic wiring can be prevented.
Further, when the concave portion is formed by shaving the first substrate, the inorganic wiring can be embedded in the first substrate, and the organic active device including the organic active element can be made slimmer. .
[0011]
The wiring of the organic active element according to the present invention is the wiring of the organic active element described above, and is characterized in that a wiring protective film is formed between the inorganic wiring and the holding member.
Here, the holding member includes a gap material for maintaining a distance between the first substrate and the second substrate.
Therefore, according to the present invention, when the first substrate and the second substrate are bonded, the gap material is pressed. Since the wiring protective film is formed between the inorganic wiring and the holding member, it is possible to prevent the gap material from damaging the inorganic wiring, that is, to prevent disconnection of the inorganic wiring.
[0012]
Further, the wiring of the organic active element of the present invention is the wiring of the organic active element described above, and is formed by using the above-described method of forming an organic wiring.
Therefore, according to the present invention, since the organic wiring is suitably formed, the same effect as the above-described method for forming the organic wiring can be obtained.
[0013]
According to another aspect of the invention, an organic active device includes the wiring of the organic active element described above.
Therefore, according to the present invention, the same effects as those of the wiring of the organic active element described above can be obtained.
[0014]
According to another aspect of the invention, an electronic apparatus includes the organic active device described above.
Here, as the electronic device, for example, an information processing device such as a mobile phone, a mobile information terminal, a clock, a word processor, and a personal computer can be exemplified.
Therefore, according to the present invention, it is possible to provide an electronic device having the same effects as the above-described organic active device and a long life.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a method for forming a wiring, a wiring of an organic active element, an organic active device, and an electronic apparatus according to the present invention will be described with reference to the drawings.
In addition, in order to make each layer and each member a size recognizable on the drawing, the scale of each layer and each member is shown differently from the actual one.
[0016]
(1st Embodiment)
Hereinafter, a first embodiment of the wiring of the organic active element according to the present invention will be described.
FIG. 1 is a schematic plan view of an organic active device provided with wiring of an organic active element according to the present embodiment, FIG. 2 is a schematic cross-sectional view taken along the line AA in FIG. 1, and FIG. FIG.
As shown in FIG. 2, the organic active device 1 includes a substrate (first substrate) 10, an organic active element 11, a protection member (second substrate) 12, a seal member (protection member) 13, a wiring 14, , A protective film 15, and a space 16 between the substrate 10 and the protective member 12 is sealed at predetermined intervals.
[0017]
The substrate 10 is a substrate made of an insulating material, and various kinds of insulating materials such as a glass substrate are used. On the surface of the substrate 10 on which the organic active elements 11 are formed, a surface protection film 10a made of SiN _X is formed.
As the substrate 10, an inorganic material such as a glass substrate or an organic material such as plastic can be used. At this time, when flexibility is required as the substrate 10, a thin film such as a resin material may be used, and when a semiconductor circuit is formed in a later step, a substrate such as a silicon wafer may be used. Alternatively, the substrate may be a substrate on which a switching element (for example, a silicon transistor) made of an inorganic material is formed in advance. In this case, a switching element formed in advance may be electrically connected to the organic active element 11. Further, as a material used for the surface protective film 10a, an inorganic film made of an oxide film of SiO ₂ or an organic film such as acrylic may be used. Note that an organic active element may be formed on the substrate 10 without forming the surface protection film 10a.
[0018]
The organic active element 11 includes various elements according to the function and form of the organic active device 1, such as a molecular single electron transistor, an organic transistor, an organic thin film transistor, an organic spin electronics element, a quantum computer, a molecular processor, and an organic storage. Is provided.
In the present embodiment, the organic active element 11 includes the molecular single-electron transistor shown in FIG. 4, and the molecular single-electron transistor has a quantum dot part R, a source part S, and a drain part D as shown in FIG. , A gate portion G, and a tunnel junction portion T.
[0019]
As a material of the protection member 12, a material corresponding to the substrate 10 is adopted, or selected according to various purposes. In this embodiment, a glass substrate is used.
As used herein, “corresponding to the substrate 10” means, for example, that when the substrate 10 is a flexible material, a thin film of a resin material or the like is used as the protection member 12. In addition, “for various purposes” means, for example, when a semiconductor circuit is formed on the upper surface of the protective member 12, a substrate such as a silicon wafer or a semiconductor circuit is formed as a material of the protective member 12. A suitable base material is selected. Further, when another organic active device is formed on the upper surface of the protective member 12 to form a stacked body of the organic active elements, various materials are suitably adopted according to the stacked body.
[0020]
As the seal member 13, an organic material, an inorganic material, a mixed material of an organic material and an inorganic material, or the like is used. When an organic material is used for the seal member 13, the use of a UV-curable resin or a thermosetting resin allows the seal member 13 to be easily formed. On the other hand, when an inorganic material is used for the seal member 13, a low melting point glass, a solder material, or the like is used. At this time, the inorganic material preferably has moisture or oxygen impermeability.
Further, as shown in FIG. 3, the seal member 13 includes a gap member 17 for maintaining a predetermined interval between the spaces 16. By setting the height of the gap member 17 as desired, the space 16 can be maintained at a suitable interval. As the gap material 17, a columnar glass material, a spherical plastic material, or the like is used.
[0021]
The wiring 14 includes an inorganic wiring 14a and an organic wiring 14b. The inorganic wiring 14a and the organic wiring 14b are connected in the space 16, and the connection state is an ohmic junction. Further, the inorganic wiring 14a is connected to an operation circuit 19 via an external terminal 18 formed by removing a part of the protective film 15, and the organic wiring 14b is connected to the organic active element 11 described above. I have.
As a material of the inorganic wiring 14a, a metal such as aluminum (Al), gold (Au), copper (Cu), or titanium (Ti) is used, and a carbon nanotube, a semiconductor material, an oxide such as silicide, or ITO is used. A material in which metal fine particles are mixed in a conductor or an organic material may be used.
As a material of the organic wiring 14b, a material obtained by adding a dopant to a conductive polymer is typically employed. As the conductive polymer, for example, polyacetylene, polypyrrole, polythiophene, poly p-phenylene, polyphenylenevinylene, or the like is used. As the dopant, in addition to a material containing an alkali metal or a halogen-based element, arsenic pentafluoride, Compounds such as boron fluoride, perchloric acid, and arsenic pentafluoride are used.
Here, since the organic material has a property that cannot withstand an extremely high temperature, as a method for forming the wiring 14, the organic wiring 14b is formed after the inorganic wiring 14a.
[0022]
The protective film 15 is a so-called hermetic seal formed so as to cover the entire organic active device 1 except for the external terminals 18. The protective film 15 has long-term stability and long life, and is particularly preferably made of an inorganic material. For example, a silicon oxide film (SiO ₂ ) or a silicon nitride film (SiN _x ) is used.
The material of the protective film 15 is adopted according to the form of the protective member 12 described above. For example, when the protection member 12 has flexibility such as a resin material, various kinds of materials according to the resin material are preferably used. Further, for example, when a semiconductor circuit is formed in the upper layer of the protection member 12, a substrate such as a silicon wafer or a base substrate of a material suitable for forming a semiconductor circuit is selected as a material of the protection member 12. . Further, for example, when another organic active device is formed on the upper surface of the protective member 12 to form a stacked body of the organic active elements, various materials are suitably used according to the stacked body.
[0023]
The space 16 is filled with nitrogen gas which is a kind of inert gas.
Although nitrogen gas is used in this embodiment, an inert gas such as a rare gas may be used. Further, the space 16 may be a space held in a vacuum atmosphere.
[0024]
In the organic active device 1 thus configured, the operating circuit 19 inputs a predetermined signal to the organic active element 11 via the external terminal 18 and the wiring 14, and the organic active element 11 is provided according to the input. The molecular single-electron transistor operates.
The molecular single-electron transistor has a characteristic that the speed of electrons supplied from the source portion S is controlled by the gate portion G, and the switching speed is substantially determined by the size of the quantum dot R. When the diameter of the dot R is about 1 nm, the speed is 10 THz and the integration degree is about 10 G / mm ^2, which is 1000 times or more higher performance than the conventional transistor. Further, a dynamic memory cell or a logic circuit can be formed based on the molecular single electron transistor.
With the operation of such a molecular single electron transistor, a signal of the organic active element 11 is output to the operation circuit 19 via the external terminal 18.
[0025]
In such an organic active element, the organic wiring 14b and the organic active element 11 are held in the space 16 sealed by the substrate 10, the protection member 12, and the sealing member 13, so that the organic wiring 14b and the organic wiring 14b The transmission of shock, the transmission of heat, the invasion of oxygen and moisture, and the like to the active element 11 are prevented, and the organic wiring 14b and the organic active element 11 can be protected. Furthermore, the deterioration of the organic wiring 14b and the organic active element 11 due to the intrusion of oxygen or moisture can be prevented, and the life can be extended. In addition, since the organic wiring 14b and the organic active element 11 are both made of an organic material, good conductivity can be obtained in the connection between them. Further, since the external terminal 18 is outside the space 16, the connection between the inorganic wiring 14a and the external terminal 18 does not require passivation of the space 16 or the like, and the inorganic wiring 14a and the external terminal 18 can be easily connected. It becomes possible.
Further, since the boundary between the organic wiring 14b and the inorganic wiring 14a is located in the space in the space 16, transmission of impact, transmission of heat, penetration of oxygen and moisture, etc. to the organic wiring 14b is prevented as described above. As a result, the connection between the organic wiring 14b and the inorganic wiring 14a can be protected, and good conductivity can be obtained in the connection between the two.
Further, since the space 16 is filled with the nitrogen gas, the organic wiring 14b and the organic active element 11 are protected from oxygen and moisture, that is, the same effect as described above is exerted.
Even when the space 16 is kept in a vacuum atmosphere, the organic wiring 14b and the organic active element 11 are protected from oxygen and moisture, that is, the same effects as described above can be obtained.
[0026]
(2nd Embodiment)
Hereinafter, a second embodiment of the wiring of the organic active device according to the present invention will be described.
The difference between the present embodiment and the first embodiment will be briefly described. In the first embodiment, the inorganic wiring is formed on the substrate, but in the present embodiment, the inorganic wiring is embedded in the recess formed in the substrate. It has a configuration.
In the present embodiment, only portions different from those of the first embodiment will be described, the same components will be denoted by the same reference numerals, and detailed description will be omitted.
[0027]
FIG. 5 is a schematic cross-sectional view of the organic active device including the wiring of the organic active element according to the present embodiment, and FIG. 6 is an enlarged view of a cross section taken along line BB of FIG.
As shown in FIG. 5, in the organic active device 2, the inorganic wiring 14a is embedded in the concave portion 20 formed in the substrate 10. As shown in FIG. 6, at the interface 13a between the substrate 10 and the sealing member, the inorganic wiring 14a and the substrate 10 are in contact with the gap material 17, and the protective member 12 and the substrate 10 It is pinched and held in close contact.
As a method for forming the concave portion 20, for example, a method for shaving the substrate 10 by a method such as etching or a liquid phase method such as a material discharging method is used to provide a convex portion on the substrate 10, and the concave portion 20 It may be a method of forming the target. When using the material discharge method, SOG or the like is used.
The inorganic wiring 14a can be formed by a so-called damascene method using the recess 20 or simply performing photoetching in the recess 20.
[0028]
In the organic active device 2 configured as described above, the gap member 17 presses the inorganic wiring 14a due to the adhesion between the protection member 12 and the substrate 10. Here, since the inorganic wiring 14a is buried in the concave portion 20, disconnection of the inorganic wiring 14a due to the pressing force of the gap material 17 can be prevented.
Further, in the present embodiment, since the space 16 is provided as in the first embodiment, the same effects can be obtained as described above.
[0029]
(Third embodiment)
Hereinafter, a third embodiment of the wiring of the organic active element according to the present invention will be described.
The difference between this embodiment and the second embodiment will be briefly described. In the second embodiment, the inorganic wiring is formed in a concave portion formed in the substrate. Is formed in which a wiring protection film for protecting the semiconductor device is formed.
In the present embodiment, only portions different from the first and second embodiments will be described, the same components will be denoted by the same reference numerals, and detailed description will be omitted.
[0030]
FIG. 7 is a schematic cross-sectional view of an organic active device including the wiring of the organic active element of the present embodiment.
As shown in FIG. 7, in the organic active device 3, an inorganic wiring 14a is formed on the surface protection film 10a, and a wiring protection film 22 is formed between the inorganic wiring 14a and the seal member 13. .
As a material of the wiring protection film 22, silicon nitride (SiN _x ) is used. In addition, an inorganic material such as silicon oxide (SiO ₂ ) or an organic material may be used, and preferably has a property of preventing moisture or oxygen from entering the space 16. More preferably, the material is harder than the wiring 14.
[0031]
In the organic active element 3 configured as described above, when the protective member 12 and the substrate 10 are attached to each other, the gap member 17 included in the seal member 13 is pressed by the inorganic wiring 14a. Since the wiring protective film is formed between the inorganic wiring 14a and the seal member 13, the gap material 17 can prevent the inorganic wiring 14a from being damaged, that is, prevent the inorganic wiring 14a from being disconnected.
Further, in the present embodiment, since the space 16 is provided as in the first and second embodiments, the same effects can be obtained as described above.
[0032]
(Fourth embodiment)
Hereinafter, a fourth embodiment of the wiring of the organic active element according to the present invention will be described.
The difference between the present embodiment and the second embodiment will be briefly described. In the second embodiment, only the inorganic wiring is buried in the recess, but in the present embodiment, a recess larger than the recess of the second embodiment is formed. The organic active element, the organic wiring, and the desiccant / deoxidizer are disposed in the concave portion.
In the present embodiment, only portions different from the above-described embodiment will be described, the same components will be denoted by the same reference numerals, and detailed description will be omitted.
[0033]
FIG. 8 is a schematic cross-sectional view of the organic active device including the wiring of the organic active element of the present embodiment.
As shown in FIG. 8, in the organic active device 4, an organic active element 11, a protection member 12, a sealing member 13, and a wiring 14 are arranged in a space 16 of a recess 20 formed in the substrate 10. I have. Further, a protective film 15 covering the surface of the protective member 12 and the substrate 10 is formed while exposing the external terminals 18, and a desiccant / oxygen absorber 21 is disposed in the space 16. The protection member 12 is embedded in the recess 20.
[0034]
The method for forming the concave portion 20 includes the method described above. When the concave portion 20 is formed by shaving the substrate 10, the organic active element 11 can be embedded in the substrate 10. Since the gap material 17 becomes unnecessary, the organic active device 4 can be made slimmer.
[0035]
Although the desiccant / deoxidizer material 21 is disposed on the side of the organic active element 11 in FIG. 8, the desiccant / deoxidizer material 21 does not indicate a specific position, and , At an arbitrary position in a space surrounded by the protection member 12 and the seal member 13. In this case, it is preferable to be disposed in a portion where oxygen or moisture easily enters, for example, in the vicinity of the interface between different parts such as the interface between the substrate 10 and the sealing member 13 and the interface between the protection member 12 and the sealing member 13. . In addition, the “drying agent / deoxidizer material” mentioned here includes a getter agent such as silica gel or Ti. Therefore, since the space 16 is maintained in a dry state or an oxygen-free state, the organic active element 11 can be protected from oxygen and moisture, and the organic active element 11 can be prevented from being deteriorated due to intrusion of oxygen and moisture. An effect similar to that of the first embodiment described above can be obtained.
[0036]
As described above, also in the organic active device 4, since the organic wiring 14b and the organic active element 11 can be prevented from being deteriorated due to the intrusion of oxygen or moisture, the same effect as the wiring of the organic active element described above can be obtained. To play.
[0037]
(Fifth embodiment)
Hereinafter, an example of an electronic apparatus including the organic active device of the above embodiment will be described.
FIG. 9 is a perspective view showing an example of a mobile phone. In FIG. 9, reference numeral 1000 indicates a mobile phone main body, and reference numeral 1001 indicates a display unit. The mobile phone main body 1000 includes the above-described organic active device.
[0038]
FIG. 10 is a perspective view illustrating an example of a wristwatch-type electronic device. In FIG. 10, reference numeral 1100 denotes a watch main body, and reference numeral 1101 denotes a display unit. The watch main body 1100 includes the above-described organic active device.
[0039]
FIG. 11 is a perspective view showing an example of a portable information processing device such as a word processor or a personal computer. 11, reference numeral 1200 denotes an information processing device, reference numeral 1202 denotes an input unit such as a keyboard, reference numeral 1204 denotes an information processing device main body, and reference numeral 1206 denotes a display unit. The information processing device main body 1204 includes the organic active device described above.
[0040]
Since the electronic devices shown in FIGS. 9 to 11 each include the organic active device of the above embodiment, it is possible to provide a long-life electronic device.
[0041]
Note that the technical scope of the present invention is not limited to the above embodiment, and various changes can be made without departing from the spirit of the present invention. The configuration and the like are merely examples, and can be appropriately changed.
[Brief description of the drawings]
FIG. 1 is a schematic plan view of an organic active device shown in a first embodiment of the present invention.
FIG. 2 is a schematic sectional view of the organic active device shown in the first embodiment of the present invention.
FIG. 3 is a sectional view of a main part of the organic active device shown in the first embodiment of the present invention.
FIG. 4 is a schematic view of a molecular single-electron transistor as an example of an organic active element.
FIG. 5 is a schematic sectional view of an organic active device according to a second embodiment of the present invention.
FIG. 6 is an enlarged cross-sectional view of a main part of the organic active device shown in the second embodiment of the present invention.
FIG. 7 is a schematic sectional view of an organic active device according to a third embodiment of the present invention.
FIG. 8 is a schematic sectional view of an organic active device according to a fourth embodiment of the present invention.
FIG. 9 is a diagram illustrating an example of an electronic apparatus including the organic active device according to the embodiment.
FIG. 10 is a diagram illustrating an example of an electronic apparatus including the organic active device according to the embodiment.
FIG. 11 is a diagram illustrating an example of an electronic apparatus including the organic active device according to the embodiment.
[Explanation of symbols]
1, 2, 3, 4 organic active device, 10 substrate (first substrate), 11 organic active element, 12 protective member (second substrate), 13 seal member (protective member), 14 wiring, 14a inorganic wiring, 14b organic Wiring, 16 spaces, 18 external terminals, 20 recesses

Claims (8)

A method for forming a wiring having an organic wiring made of an organic material and an inorganic wiring made of an inorganic material on a substrate,
The method of forming a wiring, wherein the step of forming the organic wiring is performed after the step of forming the inorganic wiring. A first substrate on which an organic active element is formed;
A second substrate disposed opposite to a surface of the first substrate on which the organic active element is formed;
A holding member that holds a space including at least the organic active element between the first substrate and the second substrate in a sealed state;
A wiring formed on the first substrate to electrically connect the organic active element and an external terminal outside the space,
The wiring includes an organic wiring made of an organic material and an inorganic wiring made of an inorganic material, the organic wiring is conductively connected to the organic active element in the space, and the inorganic wiring is conductively connected to the external terminal. A wiring for an organic active element, characterized in that: A wiring for an organic active element, wherein a boundary between the organic wiring and the inorganic wiring is located in the space. 4. The wiring according to claim 2, wherein the inorganic wiring is formed in a recess formed in the first substrate. 5. The wiring of an organic active element according to claim 2, wherein a wiring protective film is formed between said inorganic wiring and said holding member. 6. The wiring of an organic active element according to claim 2, wherein the wiring is formed by using the method of forming a wiring according to claim 1. An organic active device comprising a wiring of the organic active element according to claim 2. An electronic apparatus comprising the organic active device according to claim 7.

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