JP2004241643A - Method and device for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily and inexpensively remove residual components retained on a semiconductor substrate. <P>SOLUTION: In this method for manufacturing a semiconductor device, a treated film formed on a semiconductor substrate 13 is dry-etched, and the semiconductor substrate 13 is heated so that the residual components retained on the semiconductor substrate 13 can be removed from the semiconductor substrate 13. Afterwards, the residual components are absorbed and decomposed. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device and an apparatus for manufacturing the same, and more particularly, to a dry etching apparatus and a dry etching method.
[0002]
[Prior art]
In recent years, semiconductor devices have been steadily miniaturized and highly integrated. Among the miniaturization technologies, dry etching technology is one of the key technologies. In the dry etching technology, silicon-based dry etching used for a gate electrode material or the like is usually performed using a corrosive gas such as chlorine or hydrogen bromide using a multi-chambered apparatus.
[0003]
Hereinafter, a conventional dry etching apparatus will be described.
[0004]
As shown in FIG. 5, in the conventional dry etching apparatus, a transfer chamber 101 is provided at the center, and a load lock chamber 102, an orienter chamber 103, and a process chamber 104 are provided so as to surround the transfer chamber 101. I have. The transfer chamber 101 is a chamber for transferring a semiconductor substrate to each of the chambers 102 to 104 by a transfer robot 105 provided in a vacuum state. The load lock chamber 102 is a chamber that changes the pressure inside the chamber from an atmospheric pressure state to a vacuum state in order to transfer a semiconductor substrate to the transfer chamber 101 in a vacuum state. The orienter chamber 103 will be described later. The process chamber 104 is a chamber for performing a dry etching process on a target film formed on the surface of the semiconductor substrate.
[0005]
Next, the orienter chamber 103 will be specifically described with reference to FIG.
[0006]
As shown in FIG. 6, the orienter chamber 103 is provided with a stage 203 for mounting a semiconductor substrate 202 in a room surrounded by an orienter chamber base material 201, and the stage 203 rotates. The orienter chamber 103 is provided with a notch sensor 204 for detecting the direction of the semiconductor substrate 202 mounted on the stage 203.
[0007]
Hereinafter, the operation of the dry etching apparatus will be specifically described.
[0008]
First, as shown in FIG. 5, when the semiconductor substrate 202 is introduced into the load lock chamber 102 in which the inside of the chamber is in an atmospheric pressure state, the internal pressure of the load lock chamber 102 becomes 133 Pa or less in a closed state. Exhausted. Thereafter, the semiconductor substrate 202 is transferred from the load lock chamber 102 to the orienter chamber 103 by the transfer robot 105 in the transfer chamber 101.
[0009]
Next, the semiconductor substrate 202 transferred from the load lock chamber 102 to the orienter chamber 103 by the transfer robot 105 is introduced onto the stage 203 as shown in FIG. After the notch sensor 204 detects the orientation of the semiconductor substrate 202 disposed on the stage 203, the semiconductor substrate 202 is adjusted to a desired orientation by rotating the stage 203. Thereafter, the semiconductor substrate 202 is transferred to the process chamber 104 by the transfer robot 105. In the process chamber 4, the semiconductor substrate 202 is transferred to the load lock chamber 102 by the transfer robot 105 after a dry etching process is performed on the target film formed on the surface of the semiconductor substrate 202. In the load lock chamber 102 from which the semiconductor substrate 202 has been collected, the sealed state is released after the pressure inside the chamber is returned from the vacuum state to the atmospheric pressure state. In this manner, a series of processes on the semiconductor substrate 202 are performed.
[0010]
As described above, since the corrosive gas is used in the dry etching performed in the process chamber 104, the corrosive gas remains on the upper surface of the semiconductor substrate 202 as a residual component without being removed. When such a semiconductor substrate 202 is conveyed to the load lock chamber 102, the residual components remaining on the upper surface of the semiconductor substrate 202 diffuse inside the chamber and adhere to the inner wall of the load lock chamber 102.
[0011]
Thereafter, the residual component itself adhering to the inner wall or a reaction product generated by the reaction of the moisture in the atmosphere with the residual component causes corrosion of the inner wall of the load lock chamber 102 to generate particles. When the particles fall on the semiconductor substrate 202, they cause etching failure and deteriorate the product yield.
[0012]
In order to solve these problems, an apparatus provided with a heating chamber provided with a heating mechanism separately and having a means for adsorbing a residual component desorbed from a substrate by heat treatment to an aluminum adsorption plate (for example, Patent Document 1) Or an apparatus for removing residual components by transporting a substrate into a water vapor atmosphere and guiding it to a cleaning tank (for example, Patent Document 2).
[0013]
[Patent Document 1]
JP 08-213360 A [Patent Document 2]
Japanese Patent Application Laid-Open No. 05-335293
[Problems to be solved by the invention]
However, in the case of Patent Document 1, it is necessary to separately install a chamber for performing the heat treatment, so that the manufacturing cost increases. In addition, since aluminum is used as a means for adsorbing residual components, aluminum itself corrodes due to the residual components, so the means for adsorbing residual components themselves may cause particles. Is worried.
[0015]
On the other hand, in the case of Patent Document 2, as a control for a mechanism for generating steam and a mechanism for performing a heat treatment, extremely complicated control is required, which is impractical.
[0016]
In view of the above, an object of the present invention is to remove a residual component remaining on a substrate simply and at low cost.
[0017]
[Means for Solving the Problems]
In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention includes a first step of performing dry etching on a film to be processed formed on a substrate, and a step of performing dry etching on the substrate after the first step. A second step of desorbing the residual components staying on the substrate from the substrate by heating the substrate, and a step of adsorbing and decomposing the residual components after the second step. Things.
[0018]
According to the method for manufacturing a semiconductor device of the present invention, after desorbing the residual components remaining on the substrate, the residual components are adsorbed and decomposed, so that the residual components do not stay on the substrate again, Residual components can be removed from above the substrate. Further, the residual components can be easily removed from the substrate at low cost.
[0019]
In the method for manufacturing a semiconductor device according to the present invention, the second step preferably includes a step of heating the substrate with a lamp.
[0020]
In this way, the structure of the manufactured semiconductor device can be simplified, the manufacturing cost can be reduced, and the maintenance can be simplified.
[0021]
In the method for manufacturing a semiconductor device according to the present invention, the third step is preferably performed using an adsorption decomposition film formed of a titanium film or a titanium oxide film formed on the inner wall of the chamber.
[0022]
In this case, the residual components remaining on the substrate can be adsorbed and decomposed, and titanium or titanium oxide has excellent corrosion resistance. As a result, it is possible to prevent the yield of products from being deteriorated due to particles generated.
[0023]
In the method for manufacturing a semiconductor device according to the present invention, the third step preferably includes a step of decomposing the residual component by using a photocatalytic reaction.
[0024]
In this case, the residual components can be decomposed.
[0025]
In the method of manufacturing a semiconductor device according to the present invention, it is preferable that the second step and the third step are performed inside the orienter chamber.
[0026]
This eliminates the necessity of separately providing a new chamber, so that residual components can be simply and inexpensively removed from above the substrate.
[0027]
The apparatus for manufacturing a semiconductor device of the present invention includes a chamber for accommodating a substrate having a film to be processed formed on a surface thereof, and a residue provided inside the chamber and remaining on the substrate due to dry etching of the film to be processed. It comprises a heating means for desorbing components by heating the substrate, and an adsorption decomposition means provided inside the chamber and adsorbing and decomposing residual components desorbed from the substrate.
[0028]
According to the semiconductor device manufacturing apparatus of the present invention, after desorbing the residual components remaining on the substrate, the residual components are adsorbed and decomposed, so that the residual components do not stay on the substrate again, Residual components can be removed from above the substrate. Further, the residual components can be easily removed from the substrate at low cost.
[0029]
In the apparatus for manufacturing a semiconductor device according to the present invention, the heating means is preferably a lamp.
[0030]
In this way, the structure of the manufacturing apparatus can be simplified, the manufacturing cost can be reduced, and the maintenance can be simplified.
[0031]
In the semiconductor device manufacturing apparatus of the present invention, it is preferable that the film is an adsorption decomposition film formed of a titanium film or a titanium oxide film formed on the inner wall of the chamber.
[0032]
In this case, the residual components remaining on the substrate can be adsorbed and decomposed, and titanium or titanium oxide has excellent corrosion resistance. As a result, it is possible to prevent the yield of products from being deteriorated due to particles generated.
[0033]
In the apparatus for manufacturing a semiconductor device according to the present invention, it is preferable that the adsorption / decomposition means decomposes residual components detached from the substrate by a photocatalytic reaction.
[0034]
In this case, the residual components can be decomposed.
[0035]
In the semiconductor device manufacturing apparatus of the present invention, the chamber is preferably an orienter chamber.
[0036]
This eliminates the necessity of separately providing a new chamber, so that residual components can be simply and inexpensively removed from the substrate.
[0037]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to FIGS.
[0038]
First, a dry etching apparatus according to the present invention will be described with reference to FIG.
[0039]
As shown in FIG. 1, the dry etching apparatus includes a transfer chamber 1 at the center, and a load lock chamber 2, an orienter chamber 3, and a process chamber 4 are provided so as to surround the transfer chamber 1. In the transfer chamber 1, the transfer of the semiconductor substrate to each of the chambers 2 to 4 is performed by a transfer robot 5 provided inside a vacuum state. In the load lock chamber 2, in order to transfer the semiconductor substrate to the transfer chamber 1, which is in a vacuum state, the pressure inside the chamber is evacuated from the atmospheric pressure state to a vacuum state. The orienter chamber 3 will be described later. The process chamber 4 is a chamber for performing a dry etching process on a film to be processed formed on the surface of the semiconductor substrate.
[0040]
Next, the orienter chamber 3 will be specifically described with reference to FIG.
[0041]
As shown in FIG. 2, the orienter chamber 3 has an inner side and a bottom formed of an orienter chamber base material 11, and a lamp heating unit 12 for generating heat by a lamp is provided at an upper portion thereof. ing. A stage 14 for mounting the semiconductor substrate 13 is provided at the bottom of the orienter chamber 3, and the stage 14 rotates. At the bottom of the orienter chamber 3, an exhaust port 15 provided by opening a part of the orienter chamber base material 11 is provided. A notch sensor 16 for detecting the orientation of the semiconductor substrate 13 mounted on the stage 14 is provided at the bottom of the orienter chamber 3. Further, an adsorption decomposition film 17 coated with titanium or titanium oxide is formed on the inner wall of the orienter chamber 3.
[0042]
Hereinafter, the operation of the dry etching apparatus will be specifically described.
[0043]
First, as shown in FIG. 1, when a semiconductor substrate 13 having a film to be processed formed thereon is introduced into a load lock chamber 2 in which the inside of the chamber is at atmospheric pressure, It is evacuated so that the internal pressure becomes 133 Pa or less under a closed state. Thereafter, the semiconductor substrate 13 is transferred from the load lock chamber 2 to the orienter chamber 3 by the transfer robot 5 in the transfer chamber 1.
[0044]
Next, the semiconductor substrate 13 transferred from the load lock chamber 2 to the orienter chamber 3 by the transfer robot 5 is introduced onto a stage 14 as shown in FIG. After the notch sensor 16 detects the direction of the semiconductor substrate 13 disposed on the stage 14, the semiconductor substrate 13 is adjusted to a desired direction by rotating the stage 14. After that, the semiconductor substrate 13 is transferred to the process chamber 4 by the transfer robot 5. In the process chamber 4, a dry etching process is performed on the film to be processed formed on the surface of the semiconductor substrate 13.
[0045]
Next, the semiconductor substrate 13 after the film to be processed has been subjected to the dry etching process is transported again to the orienter chamber 3 by the transport robot 5. In the orienter chamber 3, the semiconductor substrate 13 is heated by the lamp heating unit 12. That is, as shown in FIG. 3, a corrosive gas such as chlorine or hydrogen bromide used in the etching process is applied to the residual component 21 on the semiconductor substrate 13 that has been subjected to the dry etching process in the process chamber 4. When the semiconductor substrate 13 is transported into the orienter chamber 3, the semiconductor substrate 13 generates radiant heat 22 from the lamp radiated by the lamp heating unit 10. receive. Thereby, the residual component 21 attached to the surface of the semiconductor substrate 13 is separated from the semiconductor substrate 13 into the orienter chamber 2 like the residual component 21a shown in FIG. The residual component 21a detached from the semiconductor substrate 13 is physically adsorbed by the adsorption / decomposition film 17 coated with titanium or titanium oxide formed on the inner wall of the orienter chamber 2 like the residual component 21b shown in FIG. You. Thereafter, the residual component 21b adsorbed on the adsorptive decomposition film 17 is decomposed by the photocatalytic action of the adsorptive decomposition film 17, and then discharged from the exhaust port 15.
Further, of the residual components desorbed from above the semiconductor substrate 13, the residual components 21 a not adsorbed on the adsorption decomposition film 17 are also discharged from the exhaust port 15. Thus, the residual component 21 can be removed from above the semiconductor substrate 13.
[0046]
Here, the reason for using a lamp instead of a heater as a means for heating the semiconductor substrate 13 is that the structure of the orienter chamber 3 can be simplified, the manufacturing cost can be reduced, and the maintenance is also simplified. Because it can be done. In addition, providing the lamp heating unit 10 in the orienter chamber 3 can be more easily provided structurally than providing the lamp heating unit 12 in the process chamber 4. This eliminates the need to newly install a dedicated chamber for removing the residual component 21 from the semiconductor substrate 13 as in the conventional example, and has a function of aligning the position of the semiconductor substrate 13 in the same chamber and a heating device. Function can be used properly. The mechanism for adsorbing and decomposing residual components by the adsorption decomposition film 17 will be described later.
[0047]
Then, after the semiconductor substrate 13 is transferred from the Olinter chamber 3 to the load lock chamber 2, the pressure inside the chamber is evacuated from the vacuum state to the atmospheric pressure state in the load lock chamber 2. solve. In this way, a series of processes on the semiconductor substrate 13 ends.
[0048]
This prevents the residual component 21 from diffusing from the semiconductor substrate 13 in the load lock chamber 2. That is, since the residual component 21 remaining on the semiconductor substrate 13 has already been removed inside the orienter chamber 3, the semiconductor substrate 13 having been subjected to the dry etching process is transferred to the load lock chamber 2. When transported, the residual component 21 staying on the semiconductor substrate 13 unlike the conventional example does not diffuse, and the inner wall of the load lock chamber 2 does not corrode.
[0049]
Here, the increase number of particles (median value of 0.2 μm or more) after six months from the start of production in the dry etching apparatus will be described with reference to FIG.
[0050]
As described above, in the present embodiment, after the residual component 21 staying on the semiconductor substrate 13 is desorbed by heating by the lamp heating unit 12, the desorbed residual component 21 is adsorbed by the adsorption decomposition film 17. As a result, as shown in FIG. 4, the number of particles could be reduced to about one tenth as compared with the conventional example.
[0051]
Such a result can be obtained by a mechanism of adsorbing and decomposing the residual component 21 desorbed by the adsorption decomposition film 17, and the mechanism will be described below.
[0052]
When light energy having a band gap energy (3.2 eV) or more is applied to the titanium film or the titanium oxide film, which is the adsorptive decomposition film 17, electrons are excited by the photoelectric effect to generate electron-hole pairs.
[0053]
These move to the surface of the adsorptive decomposition film 17, and electrons reduce oxygen in the air to generate (O ²⁻ ), while holes oxidize surface-adsorbed moisture to generate (OH ^* ). I do. (O ²⁻ ) and (OH ^* ) are active oxygen species and show strong oxidizing action.
[0054]
When the residual component 21 such as chlorine or hydrogen bromide is adsorbed on the adsorption / decomposition film 17 formed of titanium or titanium oxide, the residual component 21 is decomposed as shown in the following reaction formulas (1) and (2). And is discharged.
[0055]
HBr + OH ^* → Br ↑ + H ₂ O ↑ (1)
_{^{HCl + O 2- → Cl 2 ↑}} + H 2 O ↑ ... (2)
Further, as shown in the reaction formulas (1) and (2), the generated H ₂ O Is decomposed again by photocatalysis to form hydroxyl radicals (OH ^* ), which contribute to the exhaust of the residual components 21.
[0056]
Further, since the coating material such as titanium or titanium oxide is excellent in corrosion resistance, it does not corrode the inner wall of the orienter chamber 3 during the reaction represented by the above-mentioned reaction formulas (1) and (2). Generation of particles in the chamber 2 can be suppressed.
[0057]
【The invention's effect】
According to the method for manufacturing a semiconductor device of the present invention, after desorbing the residual component remaining on the substrate, the desorbed residual component is adsorbed and decomposed, so that the residual component stays on the substrate again. In addition, residual components can be removed from the substrate. In addition, residual components can be simply and inexpensively removed from the substrate. As a result, it is possible to prevent corrosion of the inner wall of the chamber. In addition, a high yield of the product can be realized, and a cleaner dry etching process can be performed. As a result, it is possible to greatly contribute to the manufacture of an ultra-high-density integrated circuit.
[Brief description of the drawings]
FIG. 1 is a plan view of a dry etching apparatus according to an embodiment of the present invention.
FIG. 2 is a sectional view showing an orienter chamber in one embodiment of the present invention.
FIG. 3 is a cross-sectional view for explaining the operation of the orienter chamber in one embodiment of the present invention.
FIG. 4 is a graph showing an increase number of particles in one embodiment of the present invention.
FIG. 5 is a plan view showing a conventional dry etching apparatus.
FIG. 6 is a sectional view showing a conventional orienter chamber.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Transfer chamber 2 Load lock chamber 3 Orienter chamber 4 Process chamber 5 Transfer robot 11 Orienter chamber base material 12 Lamp heating unit 13 Semiconductor substrate 14 Stage 15 Exhaust port 16 Notch sensor 17 Adsorption decomposition film 21, 21a, 21b Corrosive gas 22 Radiant heat

Claims (10)

A first step of performing dry etching on the target film formed on the substrate;
A second step of heating the substrate after the first step to remove residual components staying on the substrate from the substrate;
A method of adsorbing and decomposing the residual component after the second step. The method according to claim 1, wherein the second step includes a step of heating the substrate with a lamp. 2. The method according to claim 1, wherein the third step is performed using an adsorption decomposition film made of a titanium film or a titanium oxide film formed on an inner wall of the chamber. The method according to claim 1, wherein the third step includes a step of decomposing the residual component by using a photocatalytic reaction. 2. The method according to claim 1, wherein the second and third steps are performed inside an orienter chamber. A chamber for accommodating a substrate having a film to be processed on its surface,
Heating means provided inside the chamber, for removing residual components remaining on the substrate by dry etching the film to be processed by heating the substrate,
An apparatus for manufacturing a semiconductor device, comprising: an adsorbing / decomposing means provided inside the chamber and adsorbing and decomposing the residual component desorbed from the substrate. The apparatus according to claim 6, wherein the heating unit is a lamp. 7. The apparatus according to claim 6, wherein the adsorption / decomposition means is an adsorption / decomposition film formed of a titanium film or a titanium oxide film formed on an inner wall of the chamber. 7. The apparatus according to claim 6, wherein the adsorption / decomposition unit decomposes the residual component desorbed from the substrate by a photocatalytic reaction. 7. The apparatus according to claim 6, wherein the chamber is an orienter chamber.

Images