JP2004207234A - Preparation process and device of light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device configured to prevent oxygen or water from reaching a light emitting element, and its preparation process, and to seal the light emitting element with a plastic substrate through a small number of steps without insertion of any drying material. <P>SOLUTION: The present invention is configured so that, when a flexible substrate 11 provided with an light emitting element and a flexible substrate 12 are adhered to each other, a pixel region 13 is surrounded by a first seal material 16 (having a higher viscosity than a second seal material) including a gap material (e.g., filler or fine particles) holding a gap between the two substrates, and then that some droplets of the second seal material 17a are dropped and scattered over for filling to make a seal by both the first and second seal materials 16 and 17. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention is used for sealing an element (typically, a semiconductor element having a circuit including a thin film transistor (hereinafter, referred to as a TFT), a light-emitting element, a memory element, a sensor element, or a photoelectric conversion element). The present invention relates to a manufacturing apparatus provided with a bonding mechanism for bonding substrates. In particular, the present invention relates to a device for bonding a sealing substrate for sealing a light-emitting element when a light-emitting device including a layer containing an organic compound as a light-emitting layer is manufactured.

  In recent years, research on a light emitting device having an EL element as a self light emitting type light emitting element has been activated. This light emitting device is also called an organic EL display or an organic light emitting diode. These light-emitting devices have characteristics such as fast response speed, low voltage, and low power consumption driving suitable for displaying moving images. Therefore, next-generation displays such as a new generation of mobile phones and personal digital assistants (PDAs) are available. As a big attention.

  Unlike a liquid crystal display device, a light emitting device is of a self-luminous type and has a feature that there is no problem of a viewing angle. That is, as a display used outdoors, it is more suitable than a liquid crystal display, and its use in various forms has been proposed.

  In this specification, a light-emitting element formed of a cathode, an EL layer, and an anode is referred to as an EL element, and includes an EL layer between two types of stripe-shaped electrodes provided to be orthogonal to each other. There are two types: a formation method (simple matrix method), and a method of forming an EL layer between a pixel electrode connected to a TFT and arranged in a matrix and an opposing electrode (active matrix method). When the pixel density increases, it is considered that an active matrix type in which a switch is provided for each pixel (or one dot) is advantageous because it can be driven at a low voltage.

  In addition, the EL material forming the EL layer is extremely susceptible to deterioration, and is easily oxidized or absorbed by the presence of oxygen or water to deteriorate.

  Therefore, conventionally, the arrival of oxygen or the arrival of moisture to the light emitting element is prevented by covering the light emitting element with a sealing can, sealing dry air inside, and further attaching a desiccant.

In addition, the present applicant describes in Patent Document 1 a sealing method in which a portion surrounded by a sealing material is a sealable space, and the space is filled with a resin or a liquid.
JP-A-2001-203076

An object of the present invention is to provide a light-emitting device having a structure for preventing oxygen or moisture from reaching a light-emitting element and a method for manufacturing the light-emitting device. Another object is to seal a light-emitting element with a small number of steps without enclosing a drying agent.

  The present invention also provides a bonding apparatus capable of bonding a substrate having irregularities or a flexible substrate.

  Therefore, the present invention provides a structure in which a substrate provided with a light-emitting element and a transparent sealing substrate are bonded to each other, and when the two substrates are bonded to each other, the pixel region is entirely covered with a transparent second sealing material. Surrounded by a first sealing material (having a higher viscosity than the second sealing material) including a gap material (filler, fine particles, or the like) for maintaining a distance between two substrates, and surrounded by a first sealing material and a second sealing material. A structure for sealing is adopted.

  When the seal pattern shape of the first seal material is formed in a square shape, a U shape, or a U shape, and the second seal material having a low viscosity is dropped and the two substrates are bonded to each other. There is a risk that bubbles will remain at the corners.

  In particular, when the substrate is a soft and film-like substrate such as plastic, air bubbles tend to be easily generated.

  When one film of the second sealing material is dropped at the center and two film substrates are bonded to each other, it spreads concentrically and it is difficult to spread to the four corners.

  In view of the above, the present invention provides a pattern (line shape) having no bent portion without changing the pattern shape of the first sealing material into a square shape, a U shape, or a U shape, and forming bubbles at corners. An opening (four places) for escape is provided, and one drop of the second sealing material is dropped at the center portion surrounded by the first sealing material, and a few second sealing materials are dropped around the second sealing material. Add drops.

  By providing the opening, when the two substrates are bonded to each other using the low-viscosity second sealing material, the low-viscosity second sealing material is extruded in the direction of the corner opening, and is placed on the pixel region. Sealing can be performed without bubbles. Further, it is preferable that the surface of the substrate on the sealing side be smooth with excellent flatness so that air bubbles are not mixed.

  In particular, it is useful when attaching a thin substrate such as a film substrate. It is also useful for bonding a thin layer to be peeled off from a glass substrate (without a substrate) to a film substrate.

  In an experiment in which a plurality of second sealing materials were dropped at the same dropping amount, the amount dropped at the central portion was not enough to spread over the entire surface, or the second sealing material dropped at the peripheral portion was too wide. To reach the end surface (or the back surface) of the substrate.

  Accordingly, the present invention provides a method of coating the surface of a substrate tray or a substrate stage with Teflon (registered trademark) or DLC so that the second sealant may spread too much to reach the end surface (or the back surface) of the substrate. And a manufacturing apparatus for making the bonding material difficult to adhere to the sealing material. Alternatively, the material of the substrate tray or the substrate stage itself may be made of a material that is difficult to adhere to the second sealant. According to the manufacturing apparatus of the present invention, the margins for conditions such as the amount of the second sealing material to be dropped, the dropping position, and the bonding pressure are increased.

  Further, the first sealing material having a high viscosity has a function of maintaining the substrate interval with the gap material and adjusting the planar shape of the second sealing material having a low viscosity. In addition, the first sealant can be a mark when the substrate is divided. For example, in the case of forming a plurality of panels on one substrate, that is, in the case of so-called multi-paneling, the substrate may be divided along the first sealant.

  Also, when an external impact is applied, the load is applied most to the first seal material (having a gap material only in the first seal material) disposed outside the pixel area. And load is not applied to the pixel region. That is, with the structure of the present invention, the mechanical strength of the light emitting device can be further enhanced.

  In addition, since the light-emitting element is sealed with the first sealant, the second sealant, and the substrate, moisture and oxygen can be effectively blocked. Note that the bonding of the pair of substrates is preferably performed in a reduced pressure or nitrogen atmosphere.

The configuration of the invention disclosed in this specification is:
A light-emitting element including a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer is provided between a pair of substrates, at least one of which is light-transmitting. A method for manufacturing a light-emitting device including a plurality of pixel portions,
Forming a pixel portion on one of the substrates;
Drawing a linear first sealing material on the other substrate;
A step of dropping a plurality of drops of a second sealant having a lower viscosity than the first sealant in different drop amounts into a region surrounded by the first sealant;
The first sealant is disposed so as to surround the pixel portion, and the pair of substrates is attached to at least a pair of the first sealants so as to be filled with the second sealant. And a method of manufacturing a light-emitting device.

  Further, in the above structure, the second sealant is dropped at least at the center of the pixel portion and at a position surrounding the pixel portion at a certain interval from the center, and the amount of drop dropped at the center is dropped at the surrounding position. It is characterized in that it is larger than the amount of dripping.

  Further, in each of the above structures, the first sealant has openings at at least four corners.

Further, in each of the above structures, the first sealing material includes a gap material for maintaining a distance between the pair of substrates.

Further, in each of the above structures, the second seal member is exposed at the opening, and a periphery of the exposed second seal member is curved.

In each of the above structures, the second sealant is exposed at the opening, and a peripheral edge of the exposed second sealant protrudes from the opening.

Further, the configuration of another invention is as follows.
A light-emitting element including a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer is provided between a pair of substrates, at least one of which is light-transmitting. A method for manufacturing a light-emitting device including a plurality of pixel portions,
Forming a pixel portion on one of the substrates;
Drawing a linear first sealing material on the other substrate;
A step of dropping a plurality of drops of a second sealant having a lower viscosity than the first sealant in different drop amounts into a region surrounded by the first sealant;
A step of spreading the second sealant by applying pressure and filling between the first sealants facing each other when the pair of substrates is bonded so that the first sealant surrounds the pixel portion; ,
And a step of curing the first sealing material and the second sealing material.

  Further, in the above structure, the step of curing the first sealant and the second sealant is a step of irradiating ultraviolet rays or a step of heating.

  Further, in the above structure, after the step of curing the first sealant and the second sealant, a step of dividing the pair of substrates along the first sealant is provided.

In addition, a bonding apparatus that performs the above manufacturing method is also one of the present invention, and the manufacturing apparatus of the present invention includes
A manufacturing apparatus provided with a substrate bonding apparatus that bonds a pair of substrates with a sealing material interposed therebetween at a predetermined interval,
Two substrate support bases arranged facing each other,
Means for pressing between the two support bases to crush the sealing material,
The substrate support is covered with a film containing a fluorine-based resin.

  In the above structure, the film containing the fluororesin is polytetrafluoroethylene, tetrafluoroethylene-hexafluoropropylene copolymer, polychlorotrifluoroethylene, tetrafluoroethylene-ethylene copolymer, polyvinyl fluoride, It is characterized by being a kind selected from polyvinylidene fluoride.

Another configuration of the manufacturing apparatus of the present invention is a manufacturing apparatus including a substrate bonding apparatus that bonds a pair of substrates with a sealing material interposed therebetween at a predetermined interval,
Two substrate support bases arranged facing each other,
Means for pressing between the two support bases to crush the sealing material,
The manufacturing apparatus is characterized in that the substrates are respectively fixed to the two substrate supports with double-sided tape.

  Further, in the above structure, a substrate bonding apparatus provided with a light source, wherein at least one of the two substrate supports is formed of a light transmitting material, and after bonding a pair of substrates, The sealing material is cured by irradiating light passing through the sealing material. Furthermore, when the substrate is fixed using a double-sided tape whose adhesive strength is reduced by light irradiation, the double-sided tape can be peeled off from the substrate support base at the same time as the sealing material is cured by the light irradiation.

  Further, in the above structure, a substrate bonding apparatus provided with a light source, at least one of the two substrate supports is made of a light transmitting material, and the other substrate support surface has a mirror surface that reflects light. A configuration may be adopted. In this manner, light that has passed through one of the substrate supports and has passed through the pair of substrates can be reflected and irradiated on the sealant again.

  In the above structure, at least one of the two substrate supports is provided with a heating means, and after a pair of substrates is bonded, the sealing material is cured by heating. Further, when the substrate is fixed using a double-sided tape whose adhesive strength is reduced by heating, the double-sided tape can be peeled off from the substrate support at the same time as the sealing material is cured by the heating.

Note that the light-emitting element (EL element) includes a layer containing an organic compound that can obtain luminescence (Electro Luminescence) generated by application of an electric field (hereinafter, referred to as an EL layer), an anode, and a cathode. Luminescence of an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence), which are produced by the present invention. The light emitting device can be applied to the case of using either light emission.

A light-emitting element (EL element) including an EL layer has a structure in which an EL layer is sandwiched between a pair of electrodes. The EL layer usually has a stacked structure. Typically, a laminated structure of “hole transport layer / light-emitting layer / electron transport layer” is given. This structure has a very high luminous efficiency, and most light-emitting devices currently under research and development adopt this structure.

  In addition, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer, or a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer are stacked in this order on the anode. The structure is also good. The light emitting layer may be doped with a fluorescent dye or the like. Further, these layers may be formed entirely using a low molecular material, or may be formed entirely using a high molecular material. Further, a layer containing an inorganic material may be used. In this specification, all layers provided between a cathode and an anode are collectively referred to as an EL layer. Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are all included in the EL layer.

  In the light emitting device of the present invention, a driving method for screen display is not particularly limited, and for example, a dot sequential driving method, a line sequential driving method, a plane sequential driving method, or the like may be used. Typically, a line-sequential driving method is used, and a time-division grayscale driving method or an area grayscale driving method may be used as appropriate. Further, the video signal input to the source line of the light emitting device may be an analog signal or a digital signal, and a drive circuit or the like may be appropriately designed in accordance with the video signal.

  Further, the present invention is not limited to an active matrix light emitting device, and can be applied to a passive matrix light emitting device.

  According to the present invention, when a pair of substrates (particularly, a flexible plastic substrate) is attached to each other, a transparent sealing material can be filled without containing air bubbles. Therefore, a highly reliable light-emitting device can be obtained.

  An embodiment of the present invention will be described below.

(Embodiment 1)
FIG. 1A illustrates an example of a top view of a sealing substrate (a second substrate 12) before bonding. FIG. 1A illustrates an example in which a light-emitting device having one pixel portion is formed from one substrate.

First, after forming eight first sealing members 16 on the second substrate 12 using a dispenser, a plurality of second sealing members having a viscosity lower than that of the first sealing members are dropped. Note that a top view in a dropped state corresponds to FIG.

  Next, the light emitting element is attached to the first substrate 11 provided with the pixel portion 13 or the driver circuit portion 14 and the terminal portion 15. FIG. 1B illustrates a top view immediately after the pair of substrates is attached to each other. Since the viscosity of the first sealing material is high, it spreads slightly when they are bonded together, but because the viscosity of the second sealing material is low, when they are bonded, as shown in FIG. It will spread in a plane. By extruding the second sealing material between the first sealing materials 16, that is, in the direction of the arrow in FIG. 1B toward the opening, an area filled between the first sealing materials 16 is formed. Bubbles can be eliminated. The first sealing material 16 does not mix even when in contact with the second sealing material 17b, and the first sealing material 16 has a viscosity that does not change its formation position due to the second sealing material 17b.

Further, the first sealing material 16 contains a gap material (filler, fine particles, or the like) for maintaining the interval between the two substrates. In addition, the first seal members 16 are arranged symmetrically, and have a structure in which loads are applied uniformly in a well-balanced manner, so that external shocks can be uniformly diffused. Further, since the first seal members 16 have a symmetrical shape and are arranged symmetrically, the distance between the substrates can be kept more constant. Further, the first sealing material 16 is arranged in parallel with the X direction or the Y direction on the substrate plane.

  In addition, when bonding, the pattern shown in FIG. 13A in which the distance between the first seal members 86 is small in the terminal portion is employed so that the second seal member 17a is not pushed out to cover the connection terminal of the terminal portion. Good. FIG. 13B shows a top view immediately after the pair of substrates is attached to each other. Further, at the time of bonding, the pattern shown in FIG. 14A in which the first sealing material 96 is arranged obliquely with respect to the substrate end surface so that the second sealing material 17a is extruded and does not protrude from the substrate end surface may be used. Good. FIG. 14B illustrates a top view immediately after the pair of substrates is attached to each other. In FIGS. 13 and 14, only the first sealing material pattern is different from that in FIG. 1, and the other same parts are denoted by the same reference numerals as those in FIG.

  In addition, in order to widen a margin at the time of bonding, it is preferable to perform bonding with a bonding device shown in FIG. 2 so that the second sealant may spread to an end of the substrate.

2A is a cross-sectional view before bonding a pair of substrates, FIG. 2B is a cross-sectional view immediately after bonding, and FIG. 2C is a cross-sectional view after bonding. 2A to 2C, 21 is a first substrate support, 22 is a second substrate support, 23 is a fluorine-based resin film, and 24 is a lift pin. In FIG. 2, the same reference numerals are used for the portions corresponding to FIG.

The bonding apparatus shown in FIG. 2 uses a second substrate support base coated with a fluorine-based resin film represented by Teflon (registered trademark). Even if the low-viscosity second seal material reaches the substrate end surface or the substrate back surface by coating the second substrate support with a fluorine-based resin film having little adhesion to the second seal material, the second substrate It is possible to eliminate the situation where the support and the second substrate are adhered and cannot be separated.

  The second substrate support base 22 is provided with a concave portion so that the second substrate 12 can be fixed, fixed by fitting, and further provided with a rising pin 24 so that it can be taken out after pasting. The first substrate support 21 has fixing means (fixing pins, vacuum chucks, etc.) so that the first substrate can be fixed. Further, the first substrate support 21 or the second substrate support 22 may be provided with a heating unit for curing.

(Embodiment 2)
In Embodiment 1, an example in which one panel is manufactured from one substrate is described. Here, an example in which multiple panels are manufactured in which a plurality of panels are manufactured from one substrate is illustrated in FIG.

  First, the first sealant 31 is formed at a predetermined position on the second substrate 31 in an inert gas atmosphere by a dispenser device. (FIG. 3 (A)) As the translucent first sealing material 31, one having a filler (diameter of 6 μm to 24 μm) and a viscosity of 370 Pa · s is used. Further, since the seal pattern is simple, the first seal material 31 can be formed by a printing method.

  Next, a transparent second sealing material 33 is dropped on a region surrounded by the first sealing material 31 (however, at least four corners are open). (FIG. 3B) Here, a high heat-resistant UV epoxy resin having a refractive index of 1.50 and a viscosity of 500 cps (manufactured by Electrolight, 2500 Clear) is used.

  Next, the first substrate 35 provided with the pixel portion 34 and the substrate provided with the sealant are attached to each other. (FIG. 3C) Immediately before the pair of substrates are attached with the sealing material, it is preferable to perform annealing in a vacuum to perform degassing. Here, the space between the first seal materials 32 is filled by spreading the second seal material 33. Depending on the shape and arrangement of the first sealant 32, the second sealant 33 can be filled without bubbles. Next, the first sealing material 32 and the second sealing material 33 are cured by irradiating ultraviolet rays. Note that heat treatment may be performed in addition to ultraviolet irradiation.

  Note that the first substrate 35 is a plastic substrate, and a plurality of types of TFTs are formed in a matrix on the plastic substrate to form a pixel portion. The second substrate 31 is a plastic substrate.

  Next, the first substrate 35 is cut using a cutting device such as a roll cutter. (FIG. 3D) Thus, four panels can be manufactured from one substrate.

  FIG. 4 shows an example of a bonding apparatus different from that of Embodiment 1.

  4, reference numeral 41 denotes a first substrate support, 42 denotes a second substrate support, 43 denotes a fluororesin film, 44 denotes a base, 48 denotes a lower surface plate, and 49 denotes a light source. In FIG. 4, the same reference numerals are used for the portions corresponding to FIG.

  The lower platen 48 is made of a light-transmitting material, and cures the first seal material 32 and the second seal material 33 by passing ultraviolet light from a light source 49 or the like. Further, in order to efficiently irradiate the light, the surface of the first substrate support base may be a mirror surface, and the light transmitted through the lower surface plate 48 may be reflected to irradiate the sealing material again. In addition, the second substrate 31 serving as a sealing substrate is cut into a desired size in advance and arranged on the table 44. Note that a glass substrate coated with a fluorine-based resin film 43 is used here as the base 44. At the time of bonding, after lowering the first substrate support and the second substrate support, pressure is applied to bond the first substrate 35 and the second substrate 31 together, and as shown in FIG. It is cured by irradiating light.

  Also in the bonding apparatus shown in FIG. 4, even if the second sealing material 33 spreads to the end face or the back face of the second substrate and is cured, the second sealing material 33 is coated with the fluorine-based resin film 43 and does not adhere to the base 44. .

  FIG. 15 shows an example of a bonding apparatus different from FIG.

  15, 41 is a first substrate support, 42 is a second substrate support, 44 is a base, 48 is a lower surface plate, 49 is a light source, and 60 and 61 are double-sided tapes. 15, the same parts as those in FIG. 4 are denoted by the same reference numerals. Note that, in FIG. 15, the same reference numerals are used for portions corresponding to FIG.

In FIG. 15, the first substrate 35 is fixed to the first substrate support table 41 with a double-sided tape 60, and the second substrate 31 is fixed to the table 44 with a double-sided tape 61. As the double-sided tapes 60 and 61, those whose adhesive strength is reduced by irradiation with light such as ultraviolet light or those whose adhesive strength is reduced by heating may be used.

  At the time of bonding, after lowering the first substrate support and the second substrate support, pressure is applied to bond the first substrate 35 and the second substrate 31 together, and as shown in FIG. The sealing material is cured by irradiating light. When irradiating ultraviolet light to cure the sealing material, the adhesive force can be reduced at the same time if a double-sided tape whose adhesive force is reduced by irradiating ultraviolet light can be used. The panel can be easily removed from, and the double-sided tape can be peeled off from the panel.

  This embodiment can be freely combined with Embodiment 1.

  The present invention having the above configuration will be described in more detail with reference to the following embodiments.

    In this embodiment, FIG. 5 shows an example in which a layer to be separated formed over a glass substrate by using a transfer technique is attached to a plastic substrate.

Here, a separation method using a metal film and a silicon oxide film is used.

  First, an element is formed over a glass substrate (first substrate 300). In this embodiment, AN100 is used as a glass substrate. A metal film 301a, here a tungsten film (thickness: 10 nm to 200 nm, preferably 50 nm to 75 nm) is formed on this glass substrate by a sputtering method, and further, without being exposed to the air, an oxide film 302, here, a silicon oxide film (Thickness: 150 nm to 200 nm). It is preferable that the thickness of the oxide film 302 be twice or more the thickness of the metal film. Note that during the formation of the stack, an amorphous metal oxide film (tungsten oxide film) is formed between the metal film 301a and the silicon oxide film 302 to a thickness of about 2 nm to 5 nm. When separation is performed in a later step, separation occurs in the tungsten oxide film, at the interface between the tungsten oxide film and the silicon oxide film, or at the interface between the tungsten oxide film and the tungsten film.

  Instead of tungsten (W), a single layer made of an element selected from molybdenum (Mo), WN, TiN, and TiW, an alloy material or a compound material containing the element as a main component, or a stacked layer thereof is used. You may.

Note that since a film is formed on the end face of the substrate by the sputtering method, it is preferable to selectively remove the tungsten film, the tungsten oxide film, and the silicon oxide film formed on the end face of the substrate by O ₂ ashing or the like.

Next, a silicon oxynitride film (thickness: 100 nm) serving as a base insulating film is formed by a PCVD method, and an amorphous silicon film containing hydrogen (thickness: 54 nm) is stacked without being exposed to the air. Note that the silicon oxynitride film is a blocking layer for preventing diffusion of impurities such as alkali metals from a glass substrate.

When the hydrogen concentration of the above-mentioned amorphous silicon film containing hydrogen was measured by FT-IR, Si-H was 1.06 × 10 ²² (atoms / cm ³ ), and Si-H ₂ was 8.34 × 10 ¹⁹ (atoms / cm ³ ), and the hydrogen concentration in the composition ratio was calculated to be 21.5%. Further, when the hydrogen concentration was similarly calculated by changing the film forming conditions of the PCVD method, the hydrogen concentrations in the composition ratio were 16.4%, 17.1%, and 19.0%.

  Next, the amorphous silicon film is crystallized by a known technique (solid phase growth method, laser crystallization method, crystallization method using a catalyst metal, etc.), and an element using a TFT having a polysilicon film as an active layer is formed. Form. In this embodiment, a polysilicon film is obtained by using a crystallization method using a catalyst metal. A nickel acetate salt solution containing 10 ppm by weight of nickel is applied by a spinner. Instead of coating, a method of spraying a nickel element over the entire surface by a sputtering method may be used. Next, a semiconductor film (here, a polysilicon layer) having a crystal structure is formed by heat treatment and crystallization. In this embodiment, after a heat treatment (500 ° C., 1 hour), a heat treatment for crystallization (550 ° C., 4 hours) is performed to obtain a silicon film having a crystal structure.

The amorphous silicon film contains hydrogen, and when a polysilicon film is formed by heating, if a heat treatment of 410 ° C. or more is performed for crystallization, hydrogen can be diffused simultaneously with the formation of the polysilicon film. Further, by performing the heat treatment at 400 ° C. or higher, the amorphous metal oxide film is crystallized, and the metal oxide film 301b having a crystal structure is obtained. FIG. 6 shows a cross-sectional TEM photograph. Therefore, a metal oxide film having a crystal structure is formed by performing heat treatment at 410 ° C. or higher, and hydrogen is diffused. At the stage where the heat treatment at 410 ° C. or higher is completed, a relatively small force (for example, a human hand, wind pressure of a gas blown from a nozzle, ultrasonic waves, or the like) is applied to the inside of the tungsten oxide film or the tungsten oxide film. Separation can occur at the interface between the silicon oxide film and the tungsten oxide film or at the interface between the tungsten oxide film and the tungsten film. Note that when heat treatment is performed at a temperature at which a metal oxide film having a crystal structure is obtained, the thickness of the metal oxide film is slightly reduced.

  In addition, using the obtained polysilicon film, various elements typified by TFTs (thin film diodes, photoelectric conversion elements formed of a PIN junction of silicon, silicon resistance elements, and sensor elements (typically, polysilicon When a heat treatment at 410 ° C. or higher is performed without crystallization, the invention can be applied to a device using a TFT having an amorphous silicon film as an active layer. .

Next, after removing the oxide film on the surface of the silicon film having a crystal structure with diluted hydrofluoric acid or the like, irradiation with laser light (XeCl: wavelength 308 nm) for increasing the crystallization rate and repairing defects remaining in the crystal grains is performed. Is performed in the air or an oxygen atmosphere. Excimer laser light having a wavelength of 400 nm or less, or the second and third harmonics of a YAG laser is used as the laser light. Here, a pulse laser beam having a repetition frequency of about 10 to 1000 Hz is used, the laser beam is condensed to 100 to 500 mJ / cm ² by an optical system, and irradiated with an overlap ratio of 90 to 95%, and the silicon film surface May be scanned. Here, laser light irradiation was performed in the atmosphere at a repetition frequency of 30 Hz and an energy density of 470 mJ / cm ² . Note that an oxide film is formed on the surface by laser light irradiation because the irradiation is performed in the air or in an oxygen atmosphere. Although an example using a pulsed laser is shown here, a continuous wave laser may be used. In order to obtain a crystal with a large grain size during crystallization of an amorphous semiconductor film, continuous oscillation is possible. It is preferable to use a simple solid-state laser and apply the second to fourth harmonics of the fundamental wave. Typically, Nd: YVO ₄ may be applied laser (fundamental wave 1064 nm) second harmonic (532 nm) or the third harmonic (355 nm). When a continuous wave laser is used, laser light emitted from a continuous wave YVO ₄ laser having an output of 10 W is converted into a harmonic by a nonlinear optical element. There is also a method in which a YVO ₄ crystal and a nonlinear optical element are put in a resonator to emit a harmonic. Then, the laser light is preferably shaped into a rectangular or elliptical laser beam on the irradiation surface by an optical system, and the laser beam is irradiated on the object to be processed. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation may be performed by moving the semiconductor film relatively to the laser light at a speed of about 10 to 2000 cm / s.

Next, in addition to the oxide film formed by the irradiation with the laser light, the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film having a total thickness of 1 to 5 nm. This barrier layer is formed to remove nickel added for crystallization from the film. In this embodiment, the barrier layer is formed using ozone water. However, the surface of the semiconductor film having a crystal structure is oxidized by irradiation with ultraviolet light in an oxygen atmosphere or the surface of the semiconductor film having a crystal structure is formed by oxygen plasma treatment. The barrier layer may be formed by depositing an oxide film of about 1 to 10 nm by an oxidation method, a plasma CVD method, a sputtering method, an evaporation method, or the like. Further, before forming the barrier layer, an oxide film formed by laser light irradiation may be removed.

Next, an amorphous silicon film containing an argon element to be a gettering site is formed to a thickness of 10 nm to 400 nm, here 100 nm, over the barrier layer by a sputtering method. In this embodiment, the amorphous silicon film containing an argon element is formed in an atmosphere containing argon using a silicon target. When an amorphous silicon film containing an argon element is formed by a plasma CVD method, the film forming conditions are as follows: the flow rate ratio of monosilane and argon (SiH ₄ : Ar) is 1:99, and the film forming pressure is 6.665 Pa. (0.05 Torr), the RF power density is 0.087 W / cm ² , and the film formation temperature is 350 ° C.

After that, heat treatment is performed in a furnace heated to 650 ° C. for 3 minutes to perform gettering to reduce the nickel concentration in the semiconductor film having a crystal structure. A lamp annealing device may be used instead of the furnace.

Next, after the amorphous silicon film containing an argon element, which is a gettering site, is selectively removed using the barrier layer as an etching stopper, the barrier layer is selectively removed with dilute hydrofluoric acid. Note that at the time of gettering, since nickel tends to move to a region having a high oxygen concentration, it is desirable to remove the barrier layer made of an oxide film after gettering.

  In the case where crystallization is not performed using a catalytic element, the steps of forming the barrier layer, forming the gettering site, heat treatment for gettering, removing the gettering site, and removing the barrier layer are not described above. Not required.

  Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also called a polysilicon film), a mask made of a resist is formed, and an etching process is performed into a desired shape to form an island shape. To form a separated semiconductor layer. After the formation of the semiconductor layer, the resist mask is removed.

  Next, after removing the oxide film with an etchant containing hydrofluoric acid and cleaning the surface of the silicon film at the same time, an insulating film containing silicon as a main component and serving as a gate insulating film is formed. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) is formed with a thickness of 115 nm by a plasma CVD method.

  Next, a gate electrode is formed over the gate insulating film, and a source region or a drain region is formed by doping an active layer, an interlayer insulating film is formed, a source electrode or a drain electrode is formed, an activation process, and the like are performed as appropriate. A top gate type TFT 303 using a silicon film as an active layer is manufactured. Although FIG. 5 shows only the current control TFT in the pixel portion, a switching TFT and a driving circuit for driving the pixel portion are also formed on the same substrate.

Next, a film containing an organic compound (hereinafter, referred to as an “organic compound layer”) is provided between a pair of electrodes (anode and cathode), and an electric field is applied between the pair of electrodes, so that a light-emitting element capable of obtaining fluorescence or phosphorescence is obtained. Is formed to form a first electrode. First, a first electrode 304 serving as an anode or a cathode is formed. Here, as the first electrode 304, a metal film having a large work function (Cr, Pt, W, or the like) or a transparent conductive film (ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O ₃ —ZnO)) , Zinc oxide (ZnO), etc., and functioning as an anode.

Note that in the case where the source electrode or the drain electrode of the TFT is used as the first electrode as it is, or when the first electrode is separately formed in contact with the source or drain region, the TFT includes the first electrode.

Next, partition walls (called banks, barriers, banks, etc.) 305a are formed at both ends of the first electrode (anode) so as to surround the periphery of the first electrode. In order to improve coverage, a curved surface having a curvature is formed at the upper end or the lower end of the partition. For example, when a positive photosensitive acrylic is used as the material of the partition, it is preferable that only the upper end portion of the partition has a curved surface having a radius of curvature (0.2 μm to 3 μm). As the partition 305a, either a negative type which becomes insoluble in an etchant by photosensitive light or a positive type which becomes soluble in an etchant by light can be used.

In the case where a plurality of organic resins are laminated, there is a possibility that the organic resins may partially dissolve during application or firing depending on the solvent used, or the adhesion may become too high. Therefore, when an organic resin is used as the material of the partition, the partition 305a is formed of an inorganic insulating film (SiN _x film, SiN _x O _y film, AlN _x film) so as to be easily removed after applying a water-soluble resin in a later step. Or an AlN _X O _Y film). This inorganic insulating film functions as a part 305b of the partition. (FIG. 5 (A))

  Next, an adhesive soluble in water or alcohols is applied to the entire surface and fired. The composition of the adhesive may be, for example, any of epoxy, acrylate, and silicone. Here, a film (thickness: 30 μm) 306 made of a water-soluble resin (manufactured by Toagosei Co., Ltd .: VL-WSHL10) is applied by spin coating, and is exposed for 2 minutes for temporary curing, and then UV light is applied from the back side for 2 minutes. Exposure is performed for 5 minutes and for 10 minutes from the surface, for a total of 12.5 minutes, to perform full curing. (FIG. 5B) This water-soluble resin film functions as a flattening film, and can be adhered so that the surface of the flattening film and the substrate surface are substantially parallel at the time of subsequent substrate bonding. When this water-soluble resin film is not used, there is a possibility that unevenness due to electrodes and TFTs may occur when pressure-bonded.

  Next, in order to facilitate subsequent peeling, treatment for partially reducing the adhesion between the metal film 301a and the metal oxide film 301b or the adhesion between the metal oxide film 301b and the oxide film 302 is performed. The treatment for partially reducing the adhesion may be performed by partially irradiating the metal oxide film 301b with a laser beam along the periphery of the region to be separated, or from the outside along the periphery of the region to be separated. This is a process of applying pressure locally to damage the inside of the metal oxide film 301b or a part of the interface. Specifically, a hard needle may be pressed vertically with a diamond pen or the like and moved with a load. Preferably, a scriber device is used, the pressing amount is set to 0.1 mm to 2 mm, and the pressing may be performed by applying pressure. As described above, it is important to create a portion where the peeling phenomenon is likely to occur before performing the peeling, that is, to create a trigger, and by performing a pretreatment for selectively (partially) reducing the adhesion, the peeling is performed. Defects are eliminated, and the yield is further improved.

  Next, the second substrate 308 is attached to the film 306 made of a water-soluble resin using a double-sided tape 307. Further, a third substrate 310 is attached to the first substrate 300 using a double-sided tape 309. (FIG. 5C) The third substrate 310 prevents the first substrate 300 from being damaged in a later peeling step. As the second substrate 308 and the third substrate 310, a substrate having higher rigidity than the first substrate 300, for example, a quartz substrate or a semiconductor substrate is preferably used. Note that an adhesive may be used instead of the double-sided tape, for example, an adhesive that is peeled off by irradiation with ultraviolet light may be used.

  Next, the first substrate 300 provided with the metal film 301a is peeled off by physical means from the region where the adhesion is partially reduced. It can be peeled off with a relatively small force (for example, human hand, wind pressure of gas blown from a nozzle, ultrasonic waves, etc.). Thus, the layer to be separated formed over the silicon oxide layer 302 can be separated from the first substrate 300. FIG. 5D shows the state after peeling. Note that FIG. 7 shows a cross-sectional TEM photograph of the first substrate 300 after peeling. Note that FIG. 7 is a TEM photograph of a portion different from FIG. 6 and does not correspond. As shown in FIG. 7, there are a portion where the tungsten oxide film is partially thin and a portion where the tungsten oxide film is not completely present. Although the tungsten oxide film partially remains in the layer to be peeled, it is not necessary to remove the tungsten oxide film because it is transparent. In this embodiment, it is removed.

  In addition, by using the above-described peeling method, a TFT having high electric characteristics (typically, field-effect mobility) which cannot be obtained unless a glass substrate is used can be directly transferred to a plastic substrate.

  Next, the fourth substrate 312 and the oxide layer 302 (and the layer to be separated) are bonded with the adhesive 311. (FIG. 5E) The adhesive 311 is more adhesive between the oxide layer 302 (and the layer to be peeled) and the fourth substrate than the adhesive between the second substrate 308 and the layer to be peeled by the double-sided tape 307. It is important that they are higher.

  As the fourth substrate 312, a plastic substrate (ARTON made of norbornene resin having a polar group: manufactured by JSR) is used. In addition, polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyether A plastic substrate such as arylate (PAR), polybutylene terephthalate (PBT), or polyimide can be used.

Examples of the adhesive 311 include various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive.

  Next, the second substrate 308 is separated from the double-sided tape 307. (FIG. 5 (F))

  Next, the double-sided tape 307 is peeled off. (Fig. 5 (G))

Next, the water-soluble resin 306 is dissolved and removed using water. (FIG. 5 (H)) Here, the remaining water-soluble resin causes a defect. Therefore, it is preferable that the surface of the first electrode 304 be cleaned by a cleaning treatment or an O ₂ plasma treatment.

  Next, if necessary, a surface active agent (weakly alkaline) is added to a porous sponge (typically made of PVA (polyvinyl alcohol) or nylon), and the surface of the first electrode 304 is rubbed and washed.

  Next, immediately before forming the layer 313 containing an organic compound, vacuum heating is performed to remove adsorbed moisture on the entire substrate provided with the TFT and the partition. Immediately before forming the layer containing an organic compound, the first electrode may be irradiated with ultraviolet rays.

  Next, a layer 313 containing an organic compound is selectively formed over the first electrode (anode) by an evaporation method using an evaporation mask or an inkjet method. As the layer 313 containing an organic compound, a high molecular material, a low molecular material, an inorganic material, a layer in which these are mixed, a layer in which these are dispersed, or a layer in which these layers are combined as appropriate may be used.

Further, a second electrode (cathode) 314 is formed over the layer containing the organic compound. (FIG. 5 (I)) As the cathode 314, a thin film (a film which transmits light emission) of a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof MgAg, MgIn, AlLi, CaF ₂ , or CaN) ) And a transparent conductive film. If necessary, a protective layer formed by a sputtering method or an evaporation method is formed to cover the second electrode. As a protective layer, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by a sputtering method or a CVD method, and carbon as a main component (For example, a DLC film and a CN film) can be used.

  Then, a sealing material (not shown) including a gap material for keeping a pair of substrates between the fifth substrate 314 serving as a sealing material is drawn in the pattern of the first sealing material shown in FIG. This embodiment is an example in which light emitted from a light-emitting element is transmitted to the fifth substrate 314; therefore, the fifth substrate 314 may be a light-transmitting substrate. Here, the same plastic substrate (ARTON: manufactured by JSR) as the fourth substrate is used in order to prevent the warpage with the same thermal expansion coefficient. The ARTON substrate has low birefringence and low water absorption, and is suitable as the fifth substrate. In the case where a plastic substrate is used, it is preferable to perform pretreatment (such as ethanol wiping, UV irradiation, or O2 plasma treatment) for increasing the adhesion between the plastic substrate and the sealant before drawing the first sealant pattern.

Next, several drops of a low-viscosity sealing material are dropped according to Embodiment 1, and the sealing substrate and the active matrix substrate are bonded to each other using the bonding device in FIG. 2 or 4 without generating bubbles. The bonding apparatus shown in FIG. 2 or 4 is particularly useful when bonding soft plastic substrates to each other. A method of dropping a few drops of a low-viscosity sealant is also useful when bonding soft plastic substrates together. By this bonding step, sealing is performed such that the seal pattern provided on the sealing substrate is located at a position surrounding the light emitting region provided on the active matrix substrate. The space surrounded by the sealing material is sealed so as to be filled with an adhesive 315 made of a transparent organic resin. (Fig. 5 (J))

  Through the above steps, a light-emitting device including a TFT and a light-emitting element using the plastic substrate 312 and the plastic substrate 314 as supports can be manufactured. Since the support is made of a plastic substrate, it can be made thin, lightweight, and flexible. FIG. 8 illustrates an active matrix light emitting device in which a screen is displayed while bending with a finger. The light-emitting device shown in FIG. 8 is obtained according to the manufacturing method of this embodiment.

  Here, an example of a light emitting device having a bottom emission structure is shown in FIG.

Note that FIG. 9A is a top view illustrating the light-emitting device, and FIG. 9B is a cross-sectional view of FIG. 9A taken along A-A ′. Reference numeral 1201 shown by a dotted line denotes a source signal line driving circuit, 1202 denotes a pixel portion, and 1203 denotes a gate signal line driving circuit. Reference numeral 1204 denotes a plastic substrate (ARTON); and 1205, a sealing material containing a gap material for maintaining a distance between a pair of substrates. The inside surrounded by the sealing material 1205 is filled with a sealing material 1207. I have.

  Reference numeral 1208 denotes a wiring for transmitting a signal input to the source signal line driver circuit 1201 and the gate signal line driver circuit 1203, and a video signal or a clock signal from an FPC (flexible printed circuit) 1209 serving as an external input terminal. receive.

  Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over a light-transmitting substrate 1210 with an adhesive 1240 interposed therebetween. Here, a source signal line driver circuit 1201 and a pixel portion 1202 are illustrated as the driver circuits. Note that as the source signal line driver circuit 1201, a CMOS circuit in which an n-channel TFT 1223 and a p-channel TFT 1224 are combined is formed.

  The pixel portion 1202 is formed by a plurality of pixels including a switching TFT 1211, a current control TFT 1212, and a first electrode (anode) 1213 made of a transparent conductive film electrically connected to a drain of the TFT 1212.

Here, the first electrode 1213 is formed so as to partially overlap with the connection electrode, and the first electrode 1213 is electrically connected to the drain region of the TFT via the connection electrode. The first electrode 1213 is a conductive film having transparency and a large work function (ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like). ) Is preferably used.

In addition, an insulator (referred to as a bank, a partition, a barrier, a bank, etc.) 1214 is formed at both ends of the first electrode (anode) 1213. In order to improve coverage, a curved surface having a curvature is formed at an upper end or a lower end of the insulator 1214. Alternatively, the insulator 1214 may be covered with a protective film formed using an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as a main component, or a silicon nitride film.

Further, a layer 1215 containing an organic compound is selectively formed over the first electrode (anode) 1213 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 1216 is formed over the layer 1215 containing an organic compound. As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. In this manner, a light-emitting element 1218 including the first electrode (anode) 1213, the layer 1215 containing an organic compound, and the second electrode (cathode) 1216 is formed. The light emitting element 1218 emits light in the direction of the arrow shown in FIG. Here, the light-emitting element 1218 is one of light-emitting elements that can emit monochromatic light of R, G, or B. Three light-emitting elements each including a layer containing an organic compound that can emit light of R, G, or B are selectively formed. Light emitting elements are used in full color.

Further, a protective layer 1217 is formed to seal the light-emitting element 1218. As the transparent protective layer 1217, an insulating film containing silicon nitride or silicon nitride oxide as a main component obtained by a sputtering method (DC method or RF method) or a PCVD method, or a thin film containing carbon as a main component (DLC film, CN film) Or the like, or a laminate thereof is preferably used. When a silicon target is formed in an atmosphere containing nitrogen and argon, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metal can be obtained. Further, a silicon nitride target may be used. Further, the protective layer may be formed using a film forming apparatus using remote plasma.

  Further, a plastic substrate 1204 is attached to the light-emitting element 1218 with a first sealant 1205 and a second sealant 1207 under an inert gas atmosphere. Note that it is preferable to use a highly viscous epoxy resin containing a filler as the first sealant 1205. Further, as the second sealant 1207, an epoxy resin having high translucency and low viscosity is preferably used. In addition, it is preferable that the sealing materials 1205 and 1207 be a material that does not transmit moisture or oxygen as much as possible.

  The substrate 1210 is a plastic substrate (ARTON) attached after forming a TFT. Note that the substrate before the substrate 1210 is attached is separated by the above-described separation method.

Note that a method in which separation is performed in the vicinity of the interface of the tungsten oxide film is used here; however, there is no particular limitation. For example, an amorphous silicon film containing hydrogen is formed on the first substrate and then separated by laser light irradiation. A method may be used, or a method in which the first substrate is etched or mechanically cut using a solution or a gas may be used.

  This embodiment can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

  In the first embodiment, an example in which a plastic substrate is bonded is shown. However, the present invention can be applied to bonding of other substrates. In this embodiment, an example of manufacturing a light-emitting device (a top emission structure) including a light-emitting element in which an organic compound layer is used as a light-emitting layer over a glass substrate is illustrated in FIGS.

  In a conventional light-emitting device, an electrode on a substrate is formed as an anode, an organic compound layer is formed on the anode, and the light-emitting element has a cathode formed on the organic compound layer. The structure was such that the TFT was taken out from the anode as a transparent electrode toward the TFT (hereinafter, referred to as a bottom emission structure).

  In the above bottom emission structure, it is possible to cover the light emitting element with a sealing can, but the electrode on the substrate is formed as an anode, a layer containing an organic compound is formed on the anode, and a transparent layer is formed on the layer containing the organic compound. In the case where a structure in which a cathode serving as an electrode is formed (hereinafter, referred to as a top emission structure), a sealing can made of a material that blocks light cannot be used. In the top emission structure, disposing a desiccant on the pixel portion hinders display. Further, in order to prevent moisture absorption, careful handling of the desiccant was required, and it was necessary to work quickly when enclosing the desiccant.

  Compared with the bottom emission structure, the top emission structure can reduce the number of material layers through which light emitted from the layer containing an organic compound passes, and can suppress stray light between material layers having different refractive indexes.

  In this example, the bonding method and the bonding apparatus in Embodiment 1 or 2 are used when bonding the glass substrate 1104 and the glass substrate 1110.

Note that FIG. 10A is a top view illustrating the light-emitting device, and FIG. 10B is a cross-sectional view of FIG. 10A taken along a line A-A ′. Reference numeral 1101 indicated by a dotted line denotes a source signal line driver circuit, 1102 denotes a pixel portion, and 1103 denotes a gate signal line driver circuit. Reference numeral 1104 denotes a transparent sealing substrate, 1105 denotes a first sealing material, and the inside surrounded by the first sealing material 1105 is filled with a transparent second sealing material 1107. Note that the first sealant 1105 contains a gap material for keeping a distance between the substrates.

  Reference numeral 1108 denotes a wiring for transmitting a signal input to the source signal line driver circuit 1101 and the gate signal line driver circuit 1103, and receives a video signal or a clock signal from an FPC (flexible printed circuit) 1109 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC.

  Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over the glass substrate 1110 with a stacked film 1150 and an adhesive 1140 interposed therebetween. Here, a source signal line driver circuit 1101 and a pixel portion 1102 are illustrated as the driver circuits.

  Note that as the source signal line driver circuit 1101, a CMOS circuit in which an n-channel TFT 1123 and a p-channel TFT 1124 are combined is formed. These TFTs can be obtained according to the first embodiment. Further, the TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit, or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown; however, this is not always necessary, and the driver circuit can be formed outside instead of on the substrate. The structure of the TFT using a polysilicon film as an active layer is not particularly limited, and may be a top-gate TFT or a bottom-gate TFT.

  The pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current control TFT 1112, and a first electrode (anode) 1113 electrically connected to a drain thereof. The current controlling TFT 1112 may be an n-channel TFT or a p-channel TFT, but when connected to an anode, it is preferably a p-channel TFT. Further, it is preferable to appropriately provide a storage capacitor (not shown). Here, among the countless arranged pixels, only the cross-sectional structure of one pixel is shown, and an example in which two TFTs are used for one pixel is shown. However, three or more TFTs are appropriately used. , May be used.

  Here, since the first electrode 1113 is configured to be in direct contact with the drain of the TFT, the lower layer of the first electrode 1113 is a material layer capable of forming an ohmic contact with the drain made of silicon, and a layer containing an organic compound. It is desirable that the uppermost layer in contact is a material layer having a large work function. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the wiring can function as an anode. . The first electrode 1113 may be a single layer such as a titanium nitride film, a chromium film, a tungsten film, a Zn film, a Pt film, or a stack of three or more layers.

In addition, an insulator (referred to as a bank, a partition, a barrier, a bank, etc.) 1114 is formed at both ends of the first electrode (anode) 1113. The insulator 1114 may be formed using an organic resin film or an insulating film containing silicon. Here, as the insulator 1114, an insulator having a shape illustrated in FIG. 10 is formed using a positive photosensitive acrylic resin film.

In order to improve coverage, a curved surface having a curvature is formed at an upper end or a lower end of the insulator 1114. For example, when a positive photosensitive acrylic is used as the material of the insulator 1114, it is preferable that only the upper end of the insulator 1114 have a curved surface having a radius of curvature (0.2 μm to 3 μm). As the insulator 1114, any of a negative type which becomes insoluble in an etchant by photosensitive light and a positive type which becomes soluble in an etchant by light can be used.

  Alternatively, the insulator 1114 may be covered with a protective film formed using an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as a main component, or a silicon nitride film.

Further, a layer 1115 containing an organic compound is selectively formed over the first electrode (anode) 1113 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 1116 is formed over the layer 1115 containing an organic compound. As the cathode, a material having a small work function (Al, Ag, Li, Ca, or an alloy thereof MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. Here, a thin metal film is formed as the second electrode (cathode) 1116 so that light is transmitted, and a transparent conductive film (ITO (indium oxide tin oxide alloy), indium oxide oxide) is formed thereon. A zinc alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like is stacked. Note that this transparent conductive film is formed to reduce electric resistance. Thus, a light-emitting element 1118 including the first electrode (anode) 1113, the layer 1115 containing an organic compound, and the second electrode (cathode) 1116 is formed. Here, since the light-emitting element 1118 is an example of emitting white light, a color filter including a coloring layer 1131 and a light-blocking layer (BM) 1132 (an overcoat layer is not illustrated here for simplicity) is provided.

  In addition, by selectively forming a layer containing an organic compound capable of emitting R, G, and B light, full-color display can be obtained without using a color filter.

Further, a transparent protective layer 1117 is formed to seal the light-emitting element 1118. As the transparent protective layer 1117, an insulating film mainly containing silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method) or a PCVD method, a thin film mainly containing carbon (a DLC film, a CN film, or the like) ) Or a laminate thereof is preferably used. When a silicon target is formed in an atmosphere containing nitrogen and argon, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metal can be obtained. Further, a silicon nitride target may be used. Further, the transparent protective layer may be formed using a film forming apparatus using remote plasma. Further, in order to allow light to pass through the transparent protective layer, it is preferable that the thickness of the transparent protective layer be as small as possible.

  In addition, a sealing substrate 1104 is attached to the light-emitting element 1118 with the first sealant 1105 and the second sealant 1107 in an inert gas atmosphere. Note that an epoxy resin is preferably used for the first sealant 1105 and the second sealant 1107. Further, it is desirable that the first sealing material 1105 and the second sealing material 1107 are materials that do not transmit moisture and oxygen as much as possible.

  By enclosing the light-emitting element in the first sealant 1105 and the second sealant 1107 as described above, the light-emitting element can be completely shut off from the outside, and the deterioration of the organic compound layer such as moisture and oxygen can be prevented from the outside. It is possible to prevent entry of a stimulating substance.

  This embodiment can be freely combined with any one of Embodiment Mode 1, Embodiment Mode 2, and Embodiment 1.

In this embodiment, an example in which a seal pattern different from that in Embodiment 1 is used is shown in FIG.

  FIG. 11A illustrates an example of a top view of a sealing substrate (a second substrate 72) before bonding. FIG. 11A illustrates an example in which a light-emitting device including one pixel portion is formed from one substrate.

First, after forming six first sealing members 76 on a second substrate 72 which is a plastic substrate using a dispenser, a plurality of second sealing members having a lower viscosity than the first sealing members are dropped. The first seal member 76 is arranged so as not to spread to the terminal portion. Note that a top view in a dropped state corresponds to FIG. The second substrate 72, which is a plastic substrate, has a desired size in advance.

  Next, the light emitting element is bonded to the first substrate 71 provided with the pixel portion 73 or the driver circuit portion 74 and the terminal portion 75. The first substrate 71 may be a glass substrate or a plastic substrate. However, if the coefficients of thermal expansion are different, warpage may occur. Therefore, the first substrate 71 may be a substrate made of a material having the same coefficient of thermal expansion as the second substrate. FIG. 11B illustrates a top view immediately after the pair of substrates is attached to each other. Since the viscosity of the first sealant is high, it spreads slightly when bonded, but the viscosity of the second sealant is low, so that when bonded, as shown in FIG. It will spread in a plane. By extruding the second seal material between the first seal materials 76, that is, in the direction of the arrow in FIG. 11B toward the opening, the second seal material is filled in the region filled between the first seal materials 76. Bubbles can be eliminated. The first sealing material 76 does not mix even when in contact with the second sealing material 77b, and the first sealing material 76 has a viscosity that does not change its formation position due to the second sealing material 77b. Note that the first sealing material 76 contains a gap material (filler, fine particles, or the like) that keeps the space between the two substrates.

  This embodiment can be freely combined with any one of Embodiment Mode 1, Embodiment 2, Embodiment 1, and Embodiment 2.

An electronic device can be manufactured by incorporating a light-emitting device obtained by implementing the present invention into a display portion. Electronic devices include video cameras, digital cameras, goggle-type displays (head-mounted displays), navigation systems, sound reproducers (car audio, audio components, etc.), notebook personal computers, game devices, portable information terminals (mobile computers, An image reproducing apparatus provided with a recording medium (specifically, a mobile phone, a portable game machine or an electronic book, etc.), and a display capable of reproducing a recording medium such as a Digital Versatile Disc (DVD) and displaying the image. Device). FIG. 12 shows specific examples of these electronic devices.

  FIG. 12A illustrates a television, which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. The present invention can be applied to the display portion 2003, so that the reliability of the television can be improved. In addition, all televisions for displaying information such as for personal computers, for receiving TV broadcasts, and for displaying advertisements are included.

  FIG. 12B illustrates a digital camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. The present invention can be applied to the display portion 2102 and can improve the reliability of a digital camera. Further, if the digital camera is sealed with a flexible substrate according to the present invention, the weight of the digital camera can be reduced.

  FIG. 12C illustrates a laptop personal computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. The present invention can be applied to the display portion 2203 and can improve the reliability of a notebook personal computer.

  FIG. 12D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The present invention can be applied to the display portion 2302, and can improve reliability of a mobile computer.

  FIG. 12E illustrates a portable image reproducing device (specifically, a DVD reproducing device) including a recording medium, which includes a main body 2401, a housing 2402, a display portion A 2403, a display portion B 2404, and a recording medium (eg, a DVD). A reading unit 2405, operation keys 2406, a speaker unit 2407, and the like are included. Although the display portion A 2403 mainly displays image information and the display portion B 2404 mainly displays text information, the present invention can be applied to the display portions A, B 2403 and 2404 to improve the reliability of the image reproducing device. Can be. Note that the image reproducing device provided with the recording medium includes a home game machine and the like.

  FIG. 12F illustrates a portable game device including a main body 2501, a display portion 2505, operation switches 2504, and the like. The present invention can be applied to the display portion 2505, so that the reliability of the game device can be improved. Further, by sealing with a flexible substrate according to the present invention, the weight of a portable game device can be reduced.

  FIG. 12G illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and the like. . The present invention can be applied to the display portion 2602 and can improve the reliability of a video camera. In addition, if the video camera is sealed with a flexible substrate according to the present invention, the weight of the video camera can be reduced.

  FIG. 12H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, a sound input portion 2704, a sound output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. The present invention can be applied to the display portion 2703, and can improve the reliability of a mobile phone. In addition, if the mobile phone is sealed with a flexible substrate according to the present invention, the weight of the mobile phone can be reduced. Note that the display portion 2703 displays white characters on a black background, so that current consumption of the mobile phone can be suppressed.

  As described above, the display device obtained by implementing the present invention may be used as a display unit of any electronic device. Note that a light-emitting device manufactured using any of the structures of Embodiment 1, Embodiment 2, and Embodiments 1 and 3 may be used for the electronic device of this embodiment.

According to the present invention, the reliability of a light-emitting device can be improved and sealing with a flexible substrate can be performed, so that the weight of an electronic device can be reduced.

FIG. 4 is a top view of a substrate before and after bonding. (Embodiment 1) The figure which shows the cross section of a manufacturing apparatus. (Embodiment 1) FIG. 4 is a top view of a substrate before and after bonding. (Embodiment 2) The figure which shows the cross section of a manufacturing apparatus. (Embodiment 2) 4A to 4C illustrate a manufacturing process. (Example 1) The figure which shows the cross section TEM photograph before peeling. (Example 1) The figure which shows the cross section TEM photograph after peeling. (Example 1) The figure which shows the displayed panel photograph. (Example 1) FIG. 2 illustrates a structure of an active matrix EL display device. (Example 1) FIG. 2 illustrates a structure of an active matrix EL display device. (Example 2) FIG. 4 is a top view of a substrate before and after bonding. (Example 3) FIG. 13 illustrates an example of an electronic device. (Example 4) FIG. 4 is a top view of a substrate before and after bonding. (Embodiment 1) FIG. 4 is a top view of a substrate before and after bonding. (Embodiment 1) The figure which shows the cross section of a manufacturing apparatus. (Embodiment 2)

Claims (16)

A light-emitting element including a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer is provided between a pair of substrates, at least one of which is light-transmitting. A method for manufacturing a light-emitting device including a plurality of pixel portions,
Forming a pixel portion on one of the substrates;
Drawing a linear first sealing material on the other substrate;
A step of dropping a plurality of drops of a second sealant having a lower viscosity than the first sealant in different drop amounts into a region surrounded by the first sealant;
The first sealant is disposed so as to surround the pixel portion, and the pair of substrates is attached to at least a pair of the first sealants so as to be filled with the second sealant. A method for manufacturing a light-emitting device, comprising the steps of:   2. The liquid crystal display according to claim 1, wherein the second sealing material is dropped at least at a center of the pixel portion and at a position surrounding the pixel portion at a certain interval from the center, and a drop amount dropped at the center is dropped at the surrounding position. A method for manufacturing a light-emitting device, wherein the amount is larger than the drop amount.   3. The method for manufacturing a light-emitting device according to claim 1, wherein the first sealant has openings at at least four corners.   4. The method for manufacturing a light-emitting device according to claim 1, wherein the first sealing material includes a gap material for maintaining a distance between a pair of substrates. 5.   5. The light emitting device according to claim 1, wherein the second sealing material is exposed at the opening, and a peripheral edge of the exposed second sealing material is curved. Method for manufacturing the device.   6. The device according to claim 1, wherein the second sealing material is exposed at the opening, and a peripheral edge of the exposed second sealing material protrudes from the opening. 7. For manufacturing a light emitting device. A light-emitting element including a first electrode, an organic compound layer in contact with the first electrode, and a second electrode in contact with the organic compound layer is provided between a pair of substrates, at least one of which is light-transmitting. A method for manufacturing a light-emitting device including a plurality of pixel portions,
Forming a pixel portion on one of the substrates;
Drawing a linear first sealing material on the other substrate;
A step of dropping a plurality of drops of a second sealant having a lower viscosity than the first sealant in different drop amounts into a region surrounded by the first sealant;
A step of spreading the second sealant by applying pressure and filling between the first sealants facing each other when the pair of substrates is bonded so that the first sealant surrounds the pixel portion; ,
Curing the first sealant and the second sealant. A method for manufacturing a light-emitting device, comprising:   The method for manufacturing a light-emitting device according to claim 7, wherein the step of curing the first sealant and the second sealant is a step of irradiating ultraviolet rays or a step of heating.   9. The method according to claim 7, further comprising, after the step of curing the first sealant and the second sealant, a step of dividing the pair of substrates along the first sealant. Method for manufacturing a light emitting device. A manufacturing apparatus provided with a substrate bonding apparatus that bonds a pair of substrates with a sealing material interposed therebetween at a predetermined interval,
Two substrate support bases arranged facing each other,
Means for pressing between the two support bases to crush the sealing material,
The manufacturing apparatus, wherein the substrate support is covered with a film containing a fluorine-based resin.   In Claim 10, the film containing the fluororesin is made of polytetrafluoroethylene, tetrafluoroethylene-hexafluoropropylene copolymer, polychlorotrifluoroethylene, tetrafluoroethylene-ethylene copolymer, polyvinyl fluoride, A manufacturing apparatus characterized in that it is a kind selected from vinylidene fluoride. A manufacturing apparatus provided with a substrate bonding apparatus that bonds a pair of substrates with a sealing material interposed therebetween at a predetermined interval,
Two substrate support bases arranged facing each other,
Means for pressing between the two support bases to crush the sealing material,
The manufacturing apparatus, wherein the substrates are respectively fixed to the two substrate supports with double-sided tape. 13. The device according to claim 10, wherein at least one of the two substrate supports is made of a light-transmitting material, and after passing a pair of substrates together, light passing through one of the substrate supports is provided. A manufacturing apparatus characterized in that the sealing material is cured by irradiation. The double-sided tape according to claim 12 or 13, wherein the double-sided tape is a tape whose adhesive strength is reduced by light irradiation, and after bonding a pair of substrates, irradiates light passing through the substrate support to cure the sealing material. A manufacturing apparatus for reducing the adhesive strength of the double-sided tape at the same time. At least one of the two substrate supports according to claim 10, wherein at least one of the two substrate supports is made of a material that transmits light, and light emitted from a light source and passed through one substrate support is the other. A manufacturing apparatus for reflecting light on the surface of a substrate support. The manufacturing method according to any one of claims 10 to 15, wherein at least one of the two substrate supports is provided with a heating means, and after the pair of substrates are bonded, the sealing material is cured by heating. apparatus.