JP2004204265A5 - - Google Patents

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JP2004204265A5
JP2004204265A5 JP2002372706A JP2002372706A JP2004204265A5 JP 2004204265 A5 JP2004204265 A5 JP 2004204265A5 JP 2002372706 A JP2002372706 A JP 2002372706A JP 2002372706 A JP2002372706 A JP 2002372706A JP 2004204265 A5 JP2004204265 A5 JP 2004204265A5
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Japan
Prior art keywords
substrate
plating
thin film
oxide thin
metal oxide
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JP2002372706A
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Japanese (ja)
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JP2004204265A (en
JP3938356B2 (en
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Priority to JP2002372706A priority Critical patent/JP3938356B2/en
Priority claimed from JP2002372706A external-priority patent/JP3938356B2/en
Publication of JP2004204265A publication Critical patent/JP2004204265A/en
Publication of JP2004204265A5 publication Critical patent/JP2004204265A5/ja
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Publication of JP3938356B2 publication Critical patent/JP3938356B2/en
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Claims (9)

表面に埋込み配線を形成した基板の該配線の露出表面に光電気化学反応性を有する金属酸化薄膜を形成し、基板の表面にめっき液を接触させつつ、該基板の表面に向けて光を照射することを特徴とするめっき方法。  A metal oxide thin film having photoelectrochemical reactivity is formed on the exposed surface of the substrate on which the embedded wiring is formed, and light is irradiated toward the surface of the substrate while contacting the plating solution with the surface of the substrate. The plating method characterized by performing. 前記金属酸化薄膜は、配線の露出表面を強制的に酸化させることによって得られる酸化膜であることを特徴とする請求項1記載のめっき方法。  2. The plating method according to claim 1, wherein the metal oxide thin film is an oxide film obtained by forcibly oxidizing the exposed surface of the wiring. 前記配線は銅または銅合金、前記金属酸化薄膜は結晶性酸化銅膜で、波長が560nm以下の光を基板の表面に向けて照射することを特徴とする請求項2記載のめっき方法。The plating method according to claim 2, wherein the wiring is copper or a copper alloy , the metal oxide thin film is a crystalline copper oxide film, and light having a wavelength of 560 nm or less is irradiated toward the surface of the substrate. 前記配線は、銀または銀合金であることを特徴とする請求項1または2記載のめっき方法。The plating method according to claim 1 , wherein the wiring is silver or a silver alloy. 基板の表面にめっき液を接触させつつ、該基板の表面に向けて光を照射して、Co、Co合金、NiまたはNi合金膜を無電解めっきで形成することを特徴とする請求項1乃至4のいずれかに記載のめっき方法。  The Co, Co alloy, Ni, or Ni alloy film is formed by electroless plating by irradiating light toward the surface of the substrate while bringing the plating solution into contact with the surface of the substrate. 4. The plating method according to any one of 4 above. 表面に埋込み配線を形成し該配線の露出表面に光電気化学反応性を有する金属酸化薄膜を形成した基板を保持する基板ホルダと、
前記基板ホルダで保持した基板の表面にめっき液を接触させる手段と、
前記基板ホルダで保持しめっき液を接触させた基板の表面に向けて、前記金属酸化薄膜のバンドギャップに対応する波長以下の波長の光を照射する光源とを有することを特徴とするめっき装置。
A substrate holder for holding a substrate on which an embedded wiring is formed and a metal oxide thin film having photoelectrochemical reactivity is formed on the exposed surface of the wiring;
Means for bringing the plating solution into contact with the surface of the substrate held by the substrate holder;
A plating apparatus comprising: a light source that emits light having a wavelength equal to or less than a wavelength corresponding to a band gap of the metal oxide thin film toward a surface of the substrate held by the substrate holder and in contact with a plating solution.
前記金属酸化薄膜は結晶性酸化銅膜で、前記光源は560nm以下の波長の光を照射することを特徴とする請求項6記載のめっき装置。  The plating apparatus according to claim 6, wherein the metal oxide thin film is a crystalline copper oxide film, and the light source emits light having a wavelength of 560 nm or less. 基板の表面に形成した埋込み配線の露出表面に金属酸化薄膜を形成する酸化薄膜形成装置と、
前記基板の表面にめっき液を接触させつつ、該表面に向けて光を照射するめっき装置とを有することを特徴とする基板処理装置。
An oxide thin film forming apparatus for forming a metal oxide thin film on the exposed surface of the embedded wiring formed on the surface of the substrate;
A substrate processing apparatus comprising: a plating apparatus that irradiates light toward the surface of the substrate while bringing a plating solution into contact therewith.
めっき後の基板のめっき面を後洗浄する後洗浄装置を有することを特徴とする請求項8記載の基板処理装置。  9. The substrate processing apparatus according to claim 8, further comprising a post-cleaning device for post-cleaning the plated surface of the substrate after plating.
JP2002372706A 2002-12-24 2002-12-24 Plating method and substrate processing apparatus Expired - Fee Related JP3938356B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002372706A JP3938356B2 (en) 2002-12-24 2002-12-24 Plating method and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002372706A JP3938356B2 (en) 2002-12-24 2002-12-24 Plating method and substrate processing apparatus

Publications (3)

Publication Number Publication Date
JP2004204265A JP2004204265A (en) 2004-07-22
JP2004204265A5 true JP2004204265A5 (en) 2005-08-25
JP3938356B2 JP3938356B2 (en) 2007-06-27

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ID=32811236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002372706A Expired - Fee Related JP3938356B2 (en) 2002-12-24 2002-12-24 Plating method and substrate processing apparatus

Country Status (1)

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JP (1) JP3938356B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006111938A (en) * 2004-10-15 2006-04-27 Tokyo Electron Ltd Electroless plating apparatus
CN103184440B (en) * 2011-12-27 2015-12-02 比亚迪股份有限公司 Goods of a kind of surface selective metallization and preparation method thereof
JP6188063B2 (en) * 2012-07-11 2017-08-30 国立大学法人大阪大学 Ink composition for forming metal pattern and method for forming metal pattern

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