JP2004186705A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can accurately control a reflow distance L to a desired value. <P>SOLUTION: The substrate processing apparatus 500 blows gas 33 for exposure processing to a plurality of substrates 1 in the state that the plurality of the substrates 1 are arrayed at an interval from each other in a horizontal attitude in a vertical direction in one chamber 501. The substrate processing apparatus 500 includes the chamber 501 having at least one gas inlet and at least one gas outlet 501a. The substrate processing apparatus 500 further includes a gas introducing means 520 for introducing the gas 33 for the exposure processing into the chamber 501 via the gas inlet, and gas distributing means 21 provided corresponding to the plurality of the substrates 1. A plurality of openings 211 are formed in the gas distributing means 21. The gas for the exposure processing introduced via the gas introducing means 520 is blown to the corresponding substrates 1 via the openings 211. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus that performs exposure processing on a substrate used for forming a semiconductor element in various gas atmospheres. In particular, the present invention relates to a substrate processing apparatus that performs an exposure process on an organic film formed on a substrate surface under a gas atmosphere in which an organic solvent solution to be dissolved and reflowed is vaporized.

  As an example of a conventional processing apparatus that performs various kinds of processing on a substrate used for forming a semiconductor element, there is an apparatus described in Patent Literature 1. This device uses a coating film made of an organic material to flatten unevenness on the surface of a substrate on which a semiconductor element is formed, and forms a flat film having good flatness and good crack resistance due to heat treatment. be able to.

  Hereinafter, this processing apparatus will be described with reference to FIG.

  This processing apparatus includes an airtight container 501, a hot plate 502 disposed on the bottom surface of the airtight container 501, a lid 503 that covers an upper portion of the airtight container 501, and maintains the temperature inside the airtight container 501 at the same temperature as the hot plate 502. For this purpose, a heater 504 provided around the closed container 501 is provided.

  A gas inlet 505 and a gas outlet 506 are provided between the closed container 501 and the lid 503 at the upper part of the closed container 501.

  The wafer coated with the polysiloxane coating solution is loaded onto the hot plate 502 in the closed container 501. At this time, the hot plate 502 is set at 150 ° C., and dipropylene glycol monoethyl ether heated to 150 ° C. is introduced as a solvent gas from the gas inlet 505. After exposing the wafer to the solvent gas for 60 seconds, the introduction of the solvent gas is stopped. Then, nitrogen is introduced and held for 120 seconds, and the wafer is unloaded from the sealed container 501.

According to this processing apparatus, the same solvent as that of the polysiloxane coating liquid is sealed instead of the conventional heat treatment using a simple hot plate in which the solvent contained in the coating film composed of the polysiloxane coating liquid is rapidly evaporated. After being introduced into the container 501, evaporation of the solvent in the coating film is delayed, the coating film is flattened while maintaining the fluidity of the coating film, and the solvent is gradually evaporated. Therefore, there is no occurrence of cracks due to rapid shrinkage of the coating film as in the prior art, and a flattened film having good flatness can be obtained.
JP-A-11-74261

  As described above, according to the processing apparatus shown in FIG. 11, it is possible to simply form a flattening film.

  However, as will be described later, the processing apparatus shown in FIG. 11 cannot be used for the resist pattern reflow described in Japanese Patent Application No. 2000-175138 previously filed by the present inventors.

  Here, the above-described resist pattern reflow will be briefly described.

  FIG. 12 is a cross-sectional view showing each step of a semiconductor device manufacturing process using resist pattern reflow.

  First, as shown in FIG. 12A, a gate electrode 512 is formed on a transparent insulating substrate 511, and the transparent insulating substrate 511 and the gate electrode 512 are covered with a gate insulating film 513.

  Next, a semiconductor film 514 and chromium 515 are deposited over the gate insulating film 513. Thereafter, a coating film is applied by a spin coating method, and exposure and development are performed to form a resist pattern 516 as shown in FIG.

  Next, only the chromium 515 is etched using the resist pattern 516 as a mask to form source / drain electrodes 517 as shown in FIG.

  Subsequently, as shown in FIG. 12C, the resist pattern 516 is reflowed so as to cover at least a region that should not be etched, in this case, a TFT back channel region 518 (see FIG. 13A). A pattern 536 is formed.

  Next, as shown in FIG. 13A, the semiconductor film 514 is etched using the resist pattern 536 as a mask to form a semiconductor film pattern 518.

  As described above, when the resist pattern 516 is reflowed, as shown in the plan view of FIG. 13B, the semiconductor film pattern 518 formed in a region other than the region immediately below the source / drain electrode 517 is moved in the horizontal direction. It becomes wider by the distance L (see FIGS. 13A and 13B). This distance L is called the reflow distance of the resist pattern 536.

  Since the resist pattern 536 spread in this manner determines the etching processing size of the semiconductor layer 514 under the resist pattern 536, the controllability of the reflow distance L over the entire surface of the substrate is an important point.

  However, in the apparatus described in Patent Literature 1 shown in FIG. 11, the gas is merely flowed over the surface of the wafer 502, and the gas is not uniform over the entire surface of the wafer 502. It turned out to be difficult to control precisely.

  The present invention has been made in view of such a problem, and an object of the present invention is to provide a substrate processing apparatus capable of accurately controlling a reflow distance L to a desired value.

  In order to solve the above problems, the substrate processing apparatus according to the present invention is configured such that, in one chamber, a plurality of substrates are arranged in a horizontal posture at an interval from each other in a vertical direction, and each of the plurality of substrates is A substrate processing apparatus for blowing an exposure processing gas, wherein a chamber having at least one gas inlet and at least one gas exhaust port, and introducing the exposure processing gas into the chamber through the gas inlet. Gas introducing means, gas distribution means provided corresponding to each of the plurality of substrates, comprising a plurality of openings in the gas distribution means, via the gas introduction means The introduced exposure processing gas is blown onto a corresponding substrate through the opening.

  In the substrate processing apparatus of the present invention, it is preferable that the gas distribution means is disposed at a position facing a corresponding substrate.

  In the substrate processing apparatus of the present invention, the chamber preferably includes a plurality of the gas inlets, and in particular, each of the plurality of gas inlets corresponds to each of the gas distribution units. Preferably, it is provided.

  In the substrate processing apparatus of the present invention, it is preferable that a gas flow control mechanism is provided for each of the gas inlets.

  In the substrate processing apparatus of the present invention, it is preferable that the gas distribution means is formed in a plate shape.

  In this case, it is also preferable that the gas distribution means is formed in a curved shape that is convex or concave toward the corresponding substrate.

  Further, it is preferable that the gas distribution means is rotatable around its center as a rotation center.

  In the substrate processing apparatus of the present invention, the blowout range of the exposure processing gas is disposed by overlapping with the gas distribution unit and closing an arbitrary number of openings formed in the gas distribution unit. It is preferable to further comprise a gas blowing range defining means for defining the following.

  In the substrate processing apparatus of the present invention, it is also preferable that the stage on which the substrate is placed is formed to be vertically movable.

  In the substrate processing apparatus of the present invention, it is also preferable that the stage on which the substrate is mounted is formed so as to be rotatable around its axis.

  It is preferable that the substrate processing apparatus of the present invention further includes a substrate temperature adjusting means for adjusting the temperature of the substrate.

  In this case, it is preferable that the substrate temperature adjusting means controls the temperature of the substrate by controlling the temperature of a stage on which the substrate is mounted.

  The substrate processing apparatus of the present invention preferably further comprises a gas temperature adjusting means for adjusting the temperature of the exposure processing gas.

  In the substrate processing apparatus of the present invention, it is preferable that a distance between the substrate disposed in the chamber and the gas distribution means is set to 5 to 15 mm.

  It is preferable that the substrate processing apparatus of the present invention further includes a plasma generation mechanism for generating plasma in the chamber.

  In this case, the plasma generation mechanism includes an upper electrode portion disposed above the substrate and a lower electrode portion disposed below the substrate, and includes any one of the upper electrode portion and the lower electrode portion. Preferably, one is grounded and the other is grounded via a high frequency power supply.

  In the substrate processing apparatus of the present invention, further, the reduced-pressure transfer chamber is connected to the chamber, and the substrate is loaded into the chamber under a reduced pressure state, or the substrate is removed from the chamber under a reduced pressure state. Connected to the reduced-pressure transfer chamber, loading the substrate from the outside under atmospheric pressure, loading the substrate into the reduced-pressure transfer chamber under reduced pressure, and reducing the pressure of the substrate under reduced pressure. It is preferable to include a pressure-adjusting transfer chamber for transferring the substrate out of the transfer chamber under atmospheric pressure.

  The flow rate of the exposure gas is preferably 2 to 10 liters / minute. However, the flow rate of the exposure processing gas may be set to 1 to 100 liter / minute.

  Further, the temperature of the exposure processing gas is preferably 20 to 25 degrees Celsius. However, the temperature of the exposure processing gas can be in the range of 18 to 40 degrees Celsius.

  Preferably, the distance between the substrate and the gas distribution means is 5 to 15 mm. However, the distance between the substrate and the gas distribution means can be set within a range of 2 to 100 mm.

  Preferably, the temperature of the stage is set at 24 to 26 degrees Celsius. However, the temperature of the stage can be set in the range of 18 to 40 degrees Celsius.

  The pressure in the chamber is preferably -20 to +2 KPa. However, the pressure in the chamber can be set in the range of -50 to +50 KPa.

  According to the present invention, the gas for exposure processing is sprayed substantially uniformly over the entire surface of the substrate by the gas distribution means, so that the reflow distance L can be accurately controlled over the entire surface of the substrate.

  In addition, a plurality of substrates can be simultaneously processed at one time, and the processing efficiency of the substrates can be greatly increased.

  Further, it is also possible to perform dry etching or ashing processing on the substrate before or after the exposure processing or simultaneously with the exposure processing.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a sectional view showing a configuration of the substrate processing apparatus according to the first embodiment of the present invention. The substrate processing apparatus according to the present embodiment can be configured as an apparatus that uniformly blows an exposure processing gas to a substrate disposed in a chamber, or both an exposure processing and a dry etching or ashing processing. May be configured as a device for performing the above.

  As shown in FIG. 1, a substrate processing apparatus 500 according to the present embodiment includes one chamber 501 having a gas exhaust port 501a, and seven stages of substrate processing units 502a, 502b, 502c, 502d, 502e, 502f, and 502g. And a gas introduction mechanism 520.

  The seven stages of substrate processing units 502a to 502g are arranged in a vertical direction inside the chamber 501.

  Each of the substrate processing units 502a to 502g has a configuration substantially the same as the configuration of the substrate processing apparatus 100 (FIG. 2) described later except for exposing the exposure processing chamber 101 and the gas introduction mechanism 120.

  The gas introduction mechanism 520 is configured similarly to the gas introduction mechanism 120 in the substrate processing apparatus 100 described later, and supplies the exposure processing gas 33 to each of the seven stages of substrate processing units 502a to 502g.

  Here, the substrate processing apparatus 100 will be described with reference to FIG.

  As shown in FIG. 2, the substrate processing apparatus 100 includes an exposure processing chamber 101, a gas introduction mechanism 120 for introducing an exposure processing gas into the exposure processing chamber 101, and a gas blowing mechanism for blowing the exposure processing gas onto the substrate. 110.

  The exposure processing chamber 101 includes a lower chamber 10 and an upper chamber 20, and the lower chamber 10 and the upper chamber 20 are joined via an O-ring 121 attached to the lower chamber 10 to form an airtight space inside. I have.

  The exposure processing chamber 101 has a plurality of gas inlets 101a and two gas outlets 101b. Although not shown, each gas exhaust port 101b is provided with an opening adjustment mechanism, so that the ratio of the opening of each gas exhaust port 101b can be freely adjusted.

  An elevating stage 11 that can move up and down in the vertical direction is provided inside the exposure processing chamber 101, and the substrate 1 is placed on the upper surface of the elevating stage 11 in a horizontal posture. The elevating stage 11 is configured to be able to move up and down within a range of 1 to 50 mm.

  The gas blowing mechanism 110 includes a gas introduction pipe 24 inserted into each of a plurality of gas introduction ports 101a formed in the upper chamber 20, a gas diffusion member 23 attached to a tip of the gas introduction pipe 24, and a gas A plate 21 and a gas blowing plate frame 212 for fixing the gas blowing plate 21 and defining a gas blowing range are provided.

  FIG. 3 is a perspective view showing the gas blowing plate 21 and the gas blowing plate frame 212.

  As shown in FIG. 3, the gas blowing plate 21 is formed of a flat plate, and the gas blowing plate 21 has a plurality of openings 211 formed in a matrix. The opening 211 is provided so as to cover the entire area of the substrate 1 located below the gas blowing plate 21.

  In the present embodiment, the diameter of the opening 211 is 0.5 to 3 mm, and the interval between the adjacent openings 211 is 1 to 5 mm.

  As shown in FIG. 2, the gas blowing plate 21 is horizontally mounted so as to be located between the gas diffusion member 23 and the substrate 1. And a second space 102b where the substrate 1 is disposed. The opening 211 communicates the first space 102a with the second space 102b, and the exposure processing gas introduced into the first space 102a is introduced into the second space 102b through the opening 211. You.

  As shown in FIG. 3, the gas blowing plate frame 212 includes a frame-like side wall 212a and a frame-like extension 212b extending inward from a lower end of the side wall 212a.

  The gas blowing plate 21 is adhered to the extension 212b via the sealing member 214. Accordingly, there is no gap between the gas blowing plate 21 and the gas blowing plate frame 212, and the processing gas does not leak from around the gas blowing plate 21.

  By setting the length of the extension portion 212b to an appropriate length, some of the openings 211 formed in the gas blowing plate 21 are closed, and the blowing range of the exposure processing gas by the gas blowing plate 21 is defined. You.

  In this embodiment, the height of the side wall 212a is 5 mm, the length of the extension 212b is 10 mm, and the gas blowing plate frame 212 is arranged at a position 10 mm above the substrate 1.

  The gas diffusion member 23 located in the first space 102a is formed of a box-shaped member, and has a plurality of holes formed in an outer wall thereof.

  The exposure processing gas blown out through the gas introduction pipe 24 hits the inside of the gas diffusion member 23, and is temporarily diffused by being temporarily stored inside the gas diffusion member 23. As a result, the concentration of the gas for exposure processing becomes uniform inside the gas diffusion member 23. Thereafter, the exposure processing gas is released to the outside of the gas diffusion member 23.

  The gas introduction mechanism 120 includes a steam generator 31 and a gas pipe 32 that supplies an exposure processing gas generated from the steam generator 31 to each gas introduction pipe 24.

The vapor generating device 31 stores a liquid for generating an exposure processing gas. A nitrogen (N ₂ ) gas is bubbled through the liquid to generate a gas, which is supplied to the exposure processing chamber 101 together with the nitrogen gas as the exposure processing gas 33.

  Further, the gas introduction mechanism 120 includes a storage container 301 surrounding the steam generator 31, and the storage container 301 stores a temperature adjusting liquid. The temperature of the liquid for generating the exposure processing gas in the steam generator 31 is controlled by the heat conduction from the temperature adjusting liquid, and the temperature of the exposure processing gas 33 is controlled.

  As the temperature adjusting liquid, for example, a liquid obtained by mixing ethylene glycol and pure water is used. Note that any liquid having thermal conductivity and a freezing point lower than 0 degrees Celsius can be used as the temperature adjusting liquid. The temperature adjustment of the temperature adjustment liquid can be performed by heating using a heater, electronic cooling using a refrigerant, cooling with factory cooling water for cooling various manufacturing apparatuses in the factory, and the like.

  In the present embodiment, the flow rate of the exposure processing gas 33 supplied to the exposure processing chamber 101 is set in a range of 1 to 50 L / min.

  The exposure processing gas blown to the substrate 1 in the exposure processing chamber 101 is exhausted by a vacuum pump (not shown) through a gas exhaust port 101b formed around the lower chamber 10. The gas exhaust port 101b is covered with an exhaust hole plate 131 provided with a plurality of holes. The exhaust hole plate 131 uniformly exhausts the exposure processing gas after the treatment.

  In the present embodiment, the diameter of the holes provided in the exhaust hole plate 131 is set in a range of 2 to 10 mm, and the interval between adjacent holes is set in a range of 2 to 50 mm.

  Further, in order to make the gas atmosphere in the exposure processing chamber 101 higher in purity and to precisely control the processing time in seconds, it is necessary to replace the gas in the exposure processing chamber 101 in a short time. .

  In order to satisfy such requirements, according to the experimental results of the inventor of the present application, the vacuum pump used for exhausting the exposure processing chamber 101 has an exhaust speed of at least 50 L / min, and one minute has elapsed since the start of evacuation. It has been found that it is necessary to have an evacuation capacity so that the pressure in the subsequent exposure processing chamber 101 becomes -100 KPa or less.

  Each of the substrate processing units 502a to 502g of the substrate processing apparatus 500 according to the present embodiment includes the stage 503 corresponding to the stage 11 of the substrate processing apparatus 100 as described above, and the gas blowing plate 21 of the substrate processing apparatus 100. ing.

  Therefore, by using the substrate processing apparatus 500, the plurality of substrates 1 are arranged in a single chamber 501 in a horizontal posture at an interval from each other in the vertical direction. The supplied exposure processing gas can be blown onto the corresponding substrate 1 through the opening 211 of the gas blowing plate 21 to perform the exposure processing on each substrate 1.

  Next, a method for processing the substrate 1 using the substrate processing apparatus 500 according to the present embodiment will be described below.

  First, in order to make the gas atmosphere in the exposure processing chamber 501 higher in purity, the inside of the exposure processing chamber 501 is forcibly evacuated before introducing the exposure processing gas to about -70 KPa or less (atmospheric pressure is 0 KPa). So that

  Next, the gas pressure of the nitrogen gas fed into the steam generator 31 is set to 0.5 kg / cm, the flow rate is set to 5.0 L / min, and the nitrogen gas is poured into the processing liquid stored in the steam generator 31 to process the processing liquid. The vaporized gas is generated in a bubble form from the (chemical solution).

  An exposure treatment gas 33 containing a gas vaporized from the treatment liquid and a nitrogen gas is supplied to the gas pipe 32 at a gas flow rate of 5.0 L / min.

  The exposure processing gas 33 is introduced into the chamber 501 through the gas pipe 32, and is blown to the corresponding substrate 1 through the opening 211 of the gas blowing plate 21 of each of the substrate processing units 502a to 502g.

  Thus, the exposure processing gas 33 is uniformly sprayed on the substrate 1 mounted on the stage 503.

  As a result, reflow of the resist pattern 516 occurs on the substrate 1 (see FIG. 13A).

  The exposure processing gas 33 is continuously flown into the exposure processing chamber 101 via the gas pipe 32, and when the pressure in the exposure processing chamber 501 becomes positive pressure (+0 KPa or more), the gas exhaust port 501b is opened.

  When the pressure in the exposure processing chamber 101 is set to, for example, +0.2 KPa as the processing process condition, the opening degree of the gas exhaust port 501b is adjusted, and the pressure in the exposure processing chamber 501 is maintained at +0.2 KPa. So that

  However, it is possible to select a pressure in the range of -50 Kpa to 50 KPa as the processing pressure. The optimal pressure range is from -20 KPa to 20 KPa, and a particularly desirable pressure range is from -5 KPa to 5 KPa. The processing pressure is controlled so that the error is within ± 0.1 KPa.

After a certain processing time has elapsed, in order to promptly replace the gas, a method of discharging the exposure processing gas and replacing it with N ₂ gas is adopted.

  For this purpose, first, after the introduction of the exposure processing gas 33 is stopped, vacuum evacuation is performed, and the pressure in the exposure processing chamber 501 is reduced to about −70 KPa or less. Further, while a nitrogen gas or another inert gas is introduced into the exposure processing chamber 501 as a chamber replacement gas at a flow rate of 20 L / min or more, evacuation is performed using a vacuum pump for at least 10 seconds. At this time, the pressure of the exposure processing chamber 501 is maintained at least at -30 KPa.

  The evacuation is stopped, and nitrogen gas is introduced until the pressure in the exposure processing chamber 501 becomes positive. When the pressure in the exposure processing chamber 501 becomes about +2 KPa, the introduction of nitrogen gas for replacement is stopped.

  Then, the processed substrate 1 is taken out.

  An example of a material of a resist as an organic film pattern used in the present embodiment will be described below. The resist material includes a resist soluble in an organic solvent and a water-soluble resist.

  An example of a resist soluble in an organic solvent is a resist composed of a material obtained by adding a photosensitizer and an additive to a polymer compound.

  There are various polymer compounds, and polyvinyl compounds include polyvinyl cinnamate. Among rubbers, there are cyclized polyisoprene and cyclized polybutadiene mixed with a bisazide compound. In the novolak resin system, there is a mixture of cresol novolak resin and naphthoquinonediazide-5-sulfonic acid ester. Among acrylic acid copolymer resin systems, there are polyacrylamide and polyamic acid.

  As an example of the water-soluble resist, there is a resist composed of a material obtained by adding a photosensitizer and an additive to a polymer compound. There are various high molecular compounds, such as polyacrylic acid, polyvinyl acetal, polyvinyl pyrrolidone, polyvinyl alcohol, polyethylene imine, polyethylene oxide, styrene-maleic anhydride copolymer, polyvinylamine, polyallylamine, and oxazoline group-containing water-soluble. A resin, a water-soluble melamine resin, a water-soluble urea resin, an alkyd resin, a sulfonamide, or a mixture of two or more of these resins can be considered.

Next, examples of chemicals used as a solvent for dissolving the resist film will be described.
1. When the resist is dissolved in an organic solvent (a) As specific examples of the organic solvent, the organic solvent is divided into an organic solvent as an upper concept and an organic solvent as a lower concept that embodies the organic solvent. (R represents an alkyl group or a substituted alkyl group, and Ar represents a phenyl group or an aromatic ring other than a phenyl group.)
・ Alcohols (R-OH)
-Alkoxy alcohols-Ethers (R-O-R, Ar-O-R, Ar-O-Ar)
-Esters, ketones, glycols, alkylene glycols, glycol ethers Specific examples of the organic solvent include the following.
CH3OH, C2H5OH, CH3 (CH2) XOH
・ Isopropyl alcohol (IPA)
・ Ethoxyethanol ・ Methoxy alcohol ・ Long chain alkyl ester ・ Monoethanolamine (MEA)
・ Acetone / Acetylacetone / Dioxane / Ethyl acetate / Butyl acetate / Toluene / Methyl ethyl ketone (MEK)
・ Diethyl ketone ・ Dimethyl sulfoxide (DMSO)
・ Methyl isobutyl ketone (MIBK)
-Butyl carbitol-n-butyl acetate (nBA)
・ Gammabutyrolactone ・ Ethyl cellosolve acetate (ECA)
・ Ethyl lactate ・ Ethyl pyruvate ・ 2-Heptanone (MAK)
・ 3-methoxybutyl acetate ・ ethylene glycol ・ propylene glycol ・ butylene glycol ・ ethylene glycol monoethyl ether ・ diethylene glycol monoethyl ether ・ ethylene glycol monoethyl ether acetate ・ ethylene glycol monomethyl ether ・ ethylene glycol monomethyl ether acetate ・ ethylene glycol mono-n -Butyl ether, polyethylene glycol, polypropylene glycol, polybutylene glycol, polyethylene glycol monoethyl ether, polydiethylene glycol monoethyl ether, polyethylene glycol monoethyl ether acetate, polyethylene glycol monomethyl ether, polyethylene glycol monomethyl ether acetate, polyethylene Recall mono -n- butyl-methyl-3-methoxypropionate (MMP)
・ Propylene glycol monomethyl ether (PGME)
・ Propylene glycol monomethyl ether acetate (PGMEA)
・ Propylene glycol monopropyl ether (PGP)
・ Propylene glycol monoethyl ether (PGEE)
・ Ethyl-3-ethoxypropionate (FEP)
・ Dipropylene glycol monoethyl ether ・ Tripropylene glycol monoethyl ether ・ Polypropylene glycol monoethyl ether ・ Propylene glycol monomethyl ether propionate ・ Methyl 3-methoxypropionate ・ Ethyl 3-ethoxypropionate ・ N-methyl-2-pyrrolidone (NMP)
2. In the case where the resist is water-soluble (a) water (b) an aqueous solution containing water as a main component The present inventor uses the substrate processing apparatus 100 and the exposure processing gas 33 to actually coat the substrate on the substrate as follows. Was reflowed.

  First, a coating film made of a resist containing a novolak resin as a main component was applied to a thickness of 2.0 μm on a substrate to form a coating film pattern having a width of 10.0 μm and a length of 20.0 μm.

This coating film pattern was reflowed in the substrate processing apparatus 100 according to the present embodiment using NMP as the exposure processing gas 33. The conditions described in the first embodiment were used for the N ₂ gas and other conditions contained in the exposure processing gas 33.

FIG. 4 shows the reflow time dependency of the reflow distance in the horizontal direction of the coating film pattern. The main conditions of the reflow other than the above conditions used at this time are as follows.
(1) Exposure treatment gas and flow rate: treatment liquid vapor 5 L / min, N ₂ gas 5 L / min
(2) Exposure gas temperature: 22 ° C
(3) Distance between the lifting stage 11 and the gas blowing plate 21: 10 mm
(4) Temperature of the lifting stage 11: 26 ° C.
(5) Processing pressure in the exposure processing chamber 101: +0.2 KPa As can be seen from FIG. 4, the reflow distance of the coating film pattern changes in a substantially linear relationship with the reflow time. Therefore, the reflow distance can be controlled by the reflow time.

  FIG. 5 is a graph showing the uniformity of the reflow distance in the substrate after the reflow of the coating film pattern.

  Under the reflow conditions shown in FIG. 4, the reflow time, the processing gas temperature, the distance between the elevating stage 11 and the gas blowing plate 21, the temperature of the elevating stage 11, the processing pressure in the exposure processing chamber 101 are fixed, and the processing gas flow rate is adjusted. Changed. Other conditions were the same as the conditions in FIG.

In this measurement, the reflow time of the coating film pattern was set to 5 minutes, and the reflow distance of the coating film pattern after the reflow was measured. The measurement points were measured at 10 locations on the substrate 1 almost uniformly in a plane. Assuming that the maximum value of the ten measured values is Tmax, the minimum value is Tmin, and the average value is Tmean, the variation Txs of the reflow distance Tx at the measurement point is expressed by the following equation.
Txs = | (Tmean-Tx) / Tmean |
As can be seen from FIG. 5, when the flow rate of the exposure processing gas 33 was between 2 and 10 L / min, the reflow distance variation in the substrate 1 was about 5%, which was an extremely good result.

  According to the experiment of the inventor, the supply amount of the exposure processing gas 33 to the resist pattern is most important as a control factor of the reflow processing. By providing the gas blowing plate 21 and controlling the supply amount of the exposure processing gas 33 for each part of the substrate 1, the reflow distance can be freely controlled.

  FIG. 6 is a graph showing the uniformity in the substrate of the reflow distance after the reflow of the coating film pattern.

  Under the reflow conditions shown in FIG. 4, the reflow time, the processing gas temperature, the processing gas flow rate, the temperature of the elevating stage 11, the processing pressure in the exposure processing chamber 101 are fixed, and the distance between the elevating stage 11 and the gas blowing plate 21 is set. Changed.

  As is clear from FIG. 6, if the distance between the lifting stage 11 and the gas blowing plate 21 is set in a range of 5 to 15 mm, the reflow distance can be suppressed to about 10% or less within the substrate 1. Do you get it.

  FIG. 7 is a graph showing the reflow speed of the coating film pattern.

  Under the reflow conditions shown in FIG. 4, the reflow time, the processing gas temperature, the processing gas flow rate, the distance between the elevating stage 11 and the gas blowing plate 21, the processing pressure in the exposure processing chamber 101 are fixed, and the temperature of the elevating stage 11 is reduced. Changed.

  As is clear from FIG. 7, it is found that the reflow speed of the coating film pattern is stabilized at around 10 μm / min by setting the temperature of the elevating stage 11 to 24 to 26 ° C.

From the above measurement results, in the substrate processing apparatus 100, by performing the exposure processing of the exposure processing gas 33 to the substrate 1 under the following conditions, the reflow distance of the coating film pattern is maintained while maintaining the function as a mask. In the substrate 1 can be suppressed within 10%.
(1) Exposure treatment gas and flow rate: treatment liquid vapor 2 to 10 L / min, nitrogen gas 2 to 10 L / min
(2) Exposure gas temperature: 20 to 26 ° C
(3) Distance between the lifting stage 11 and the gas blowing plate 21: 5 to 15 mm
(4) Temperature of the lifting stage 11: 24 to 26 ° C.
(5) Processing pressure in exposure processing chamber 101 -1 to +2 KPa
Each of the substrate processing units 502a to 502g of the substrate processing apparatus 500 according to the present embodiment has the same configuration as that of the substrate processing apparatus 100 (FIG. 2) except for the exposure processing chamber 101 and the gas introduction mechanism 120. Since the reflow is performed using the substrate processing apparatus 500 according to the present embodiment, the same effect as in the case where the reflow is performed using the substrate processing apparatus 100 is expected because they have substantially the same configuration. it can.

Although the substrate processing apparatus 500 according to the present embodiment has been described as an apparatus for reflowing a resist, the substrate processing apparatus 500 can be used for a purpose other than reflowing a resist. For example, the surface of a semiconductor substrate can be washed with an acid or used for improving the adhesion of a resist to the substrate. In such a case, the following chemicals are used.
(A) Solution mainly composed of acid (for surface cleaning)
・ Hydrochloric acid / hydrogen fluoride / other acid solution (B) Inorganic-organic mixed solvent (when used to enhance adhesion of organic film)
-Silane coupling agent such as hexamethyldisilazane According to the above-described first embodiment, the gas for exposure treatment is sprayed almost uniformly over the entire surface of the substrate 1 by the gas blowing plate 21. Therefore, the reflow distance L can be accurately controlled over the entire surface of the substrate 1.

  In addition, a plurality of substrates can be simultaneously processed at one time, and the processing efficiency of the substrates can be greatly increased.

  Although the substrate processing apparatus 500 according to the present embodiment is configured as having seven stages of substrate processing units 502a to 502g, the number of substrate processing units is not limited to seven, and is an arbitrary number of two or more. Can be selected.

(Second embodiment)
The stage 503 of each of the substrate processing units 502a to 502g of the substrate processing apparatus 500 according to the present embodiment may be provided with a temperature adjusting mechanism like the stage 11 of the substrate processing apparatus 200 (FIG. 8) described below. The gas introduction mechanism 520 may include a storage container 301 (FIG. 8) surrounding the steam generator 31.

  FIG. 8 is a cross-sectional view illustrating a configuration of the substrate processing apparatus 200. In the substrate processing apparatus 200, components having the same structure and function as the components of the substrate processing apparatus 100 are denoted by the same reference numerals.

  According to experiments performed by the inventor of the present application, it has been found that it is necessary to adjust the temperature of each mechanism in order to enhance the stabilization and uniformity of the treatment process for the substrate 1 and to control the reaction rate.

  For this reason, the substrate processing apparatus 200 is provided with a temperature adjustment mechanism as described below.

  In the lower chamber 10, in order to adjust the temperature of the substrate 1, the inside of the elevating stage 11 is made hollow, and a temperature control liquid 112 is flowed and circulated inside the elevating stage 11, thereby controlling the temperature of the entire elevating stage 11. Do.

  In addition, the inside of the upper chamber 20 is made hollow, and the temperature control liquid 221 is flowed and circulated inside the upper chamber 20, so that it is in contact with the upper chamber 20 using not only the upper chamber 20 but also heat conduction. The temperature of the gas introduction pipe 24, the gas diffusion member 23, and the gas blowing plate 21 is adjusted.

  Next, in the gas introduction mechanism 120, in order to adjust the temperature of the supplied exposure processing gas 33, the inside of the storage container 301 is made hollow, and a temperature control liquid is flowed and circulated inside the storage container 301. The temperature of the exposure processing gas 33 is adjusted.

  It is necessary to control the temperature in a range of 10 to 80 ° C., particularly 20 to 50 ° C., and it is possible to control the temperature at least within ± 3 ° C., particularly within ± 0.5 ° C. It turned out to be necessary.

  In the substrate processing method according to the present embodiment, for example, the temperature control liquid 112 is set to 24 ° C. so that the temperature of the elevating stage 11 and the substrate 1 are the same.

  Further, the temperature control liquid poured into the storage container 301 is set at 26 ° C. so that the temperature of the exposure processing gas 33 from the gas introduction mechanism 120 becomes the same.

  Further, the temperature control liquid 221 is also set at 26 ° C. so that the temperatures of the gas blow-out plate 21, the upper chamber 20 and the gas diffuser 23 are the same.

  Thereafter, the same process as in the first embodiment is performed.

(Modification of First and Second Embodiments)
The structure of the substrate processing apparatus 500 according to the above-described first and second embodiments is not limited to the above structure, and various modifications are possible as described below.

  First, the following changes are possible in the gas blowing mechanism.

  In the first and second embodiments, one gas flow control mechanism is provided on the upstream side of each gas inlet, and distribution of the exposure processing gas 33 from the gas flow control mechanism to each gas inlet is performed. Although it is assumed that a gas flow rate control mechanism for adjusting the flow rate of the exposure processing gas 33 can be provided at each of the gas introduction ports. This gas flow control mechanism can control the flow rate of the exposure processing gas 33 by performing mass flow control, control using a flow meter, simple control of the opening angle of a valve, and the like.

  In the substrate processing apparatus 500 according to the first embodiment, the gas blowing plate 21 is formed as a flat plate, but is formed of a plate having a curved surface that is convex toward the substrate 1 or concave. It is also possible.

  In the substrate processing apparatus 500 according to the first embodiment, the gas blowing plate 21 is fixed to the upper chamber 20, but the gas blowing plate 21 is formed to be rotatable around its center as a rotation center. Is also possible. For example, by rotating the gas blowing plate 21 while the exposure processing gas 33 is being blown against the substrate 1 using a motor or other power source, the exposure processing gas 33 is more uniformly applied to the substrate 1. Can be sprayed against.

  Further, not only the gas blowing plate 21 but also the elevating stage 503 can be formed so as to be rotatable about its axis as a center of rotation.

  For example, by rotating both the gas blowing plate 21 and the elevating stage 503 in opposite directions, the exposure processing gas 33 can be more uniformly blown to the substrate 1.

  Further, a pressure measuring element for measuring the internal pressure of the exposure processing chamber 501 is provided inside the exposure processing chamber 501, and a vacuum exhaust device for evacuating the inside of the exposure processing chamber 501 is provided according to the pressure measured by the pressure measuring element. By operating, the internal pressure of the exposure processing chamber 501 can be automatically adjusted.

(Third embodiment)
Each of the substrate processing units 502a to 502g of the substrate processing apparatus 500 according to the present embodiment supplies an exposure processing gas to a substrate disposed in a chamber as in a substrate processing apparatus 400 (FIG. 9) described below. In addition to the uniform spraying, the substrate may be subjected to dry etching or ashing.

  A substrate processing apparatus 400 illustrated in FIG. 9 is an apparatus that uniformly blows an exposure processing gas to a substrate disposed in a chamber and performs dry etching or ashing processing on the substrate.

  Note that the dry etching or ashing treatment can be performed before or after the exposure treatment, or can be performed simultaneously with the exposure treatment.

  In the substrate processing apparatus 400, components having the same structure and function as those of the above-described substrate processing apparatus 100 are denoted by the same reference numerals.

  The substrate processing apparatus 400 includes, in addition to the configuration of the substrate processing apparatus 100, a plasma generation mechanism. The plasma generation mechanism includes an upper electrode 410 disposed between the upper chamber 20 and the gas blowing plate 21; It comprises a lower electrode 420, a capacitor 422, and an RF high-frequency power supply 423 disposed inside the elevating stage 11.

  The upper electrode 410 is connected to the ground 412 via the upper electrode wiring 411.

  The lower electrode 420 is connected to the capacitor 422 and the RF high-frequency power supply 423 via the lower electrode wiring 421, and is finally connected to the ground 424.

  In the case of the present embodiment, the substrate processing apparatus 500 includes the same plasma generation mechanism as in the substrate processing apparatus 400.

  By using the substrate processing apparatus 500 configured as described above, exposure processing and dry etching or ashing processing for the substrate 1 can be performed as described below.

  First, a pattern of a film to be etched is formed on the substrate 1. The mask pattern of the resist film to be further formed thereon (hereinafter referred to as “resist mask”) is deformed in the same manner as in the above-described first embodiment. That is, by exposing the substrate 1 to the exposure processing gas 33, the resist mask is dissolved and reflowed, and its pattern is deformed.

  Here, before and after the resist mask undergoes the reflow deformation, the pattern of the film to be etched formed on the substrate 1 is etched with a resist mask having a different pattern state.

  Thereby, as the pattern of the film to be etched on the substrate 1, two types of etching patterns can be formed.

However, a process called an ashing process using O ₂ plasma is also performed on this resist mask.

  Dry etching or ashing processing in the substrate processing apparatus 500 in the case of the present embodiment is performed as follows. However, the dry etching or ashing process performed by the substrate processing apparatus 500 in the case of the present embodiment is the same as the normal dry etching or ashing process.

  First, the substrate 1 is mounted in the exposure processing chamber 501, and the substrate 1 is evacuated to remove the residual gas in the exposure processing chamber 501. In this case, the pressure in the exposure processing chamber 501 is about 1 Pa or less.

Next, in the case of dry etching, for example, Cl ₂ / O ₂ / He (in the case of etching metal such as Cr) as an etching gas, and in the case of ashing, only O ₂ or O ₂ is used as a gas. A mixed gas such as ₂ / CF ₄ is introduced into the exposure processing chamber 101.

  In that case, the pressure in the exposure processing chamber 501 is kept constant in the range of 10 Pa to 120 Pa.

  Next, dry etching or ashing is performed on the substrate 1 by performing plasma discharge between the upper electrode 410 and the lower electrode 420 using the RF high-frequency power supply 623 and the capacitor 622.

  In the present embodiment, the lower electrode 420 is grounded via the capacitor 622 and the RF high-frequency power supply 623. However, the lower electrode 420 may be configured to be grounded only via the RF high-frequency power supply 623.

  In the present embodiment, the upper electrode 410 is directly grounded, and the lower electrode 420 is grounded via the capacitor 622 and the RF high frequency power supply 623. On the contrary, the lower electrode 420 is directly grounded, The upper electrode 410 may be configured to be grounded via the capacitor 622 and the RF high-frequency power supply 623 or only via the RF high-frequency power supply 623.

  Further, the plasma generation mechanism for generating plasma in the exposure processing chamber 501 is not limited to the plasma generation mechanism in the present embodiment, and another plasma generation mechanism can be used.

  As described above, according to the substrate processing apparatus 500 of the present embodiment, it is possible to perform the exposure processing on the substrate 1 and the dry etching or ashing processing in one chamber.

  Note that the exposure processing gas 33 used in the exposure processing and the various gases used in the dry etching or ashing processing may be introduced into the exposure processing chamber 501 through separate gas introduction mechanisms. It is also possible to introduce the gas into the exposure processing chamber 501 using the same gas introduction mechanism. However, when it is necessary to perform the exposure process and the dry etching or ashing process at the same time, it is necessary to provide a separate gas introduction mechanism.

  Further, in the substrate processing apparatus 500 according to the present embodiment, similarly to the case of the second embodiment, a temperature adjusting mechanism for maintaining the temperature of the upper electrode 410 and the lower electrode 420 constant can be provided.

(Fourth embodiment)
FIG. 10 is a schematic diagram illustrating a configuration of a substrate processing apparatus according to a fourth embodiment of the present invention. The substrate processing apparatus 600 according to the present embodiment transfers a substrate to be processed from the atmosphere to the exposure processing chamber, and continuously performs a process until the substrate is returned to the atmosphere from the exposure processing chamber after the processing is completed. Is a device that enables

  The substrate processing apparatus 600 according to the present embodiment is connected to the three processing chambers 601 and the three processing chambers 601, respectively, and loads the substrate before processing into the processing chamber 601 under reduced pressure. The decompressed transfer chamber 602 and the depressurized transfer chamber 602 are connected to carry out the processed substrate from the processing chamber 601 under the depressurized state. And a pressure-adjusted transfer chamber 603 for transferring the substrate into the reduced-pressure transfer chamber 602, unloading the processed substrate from the reduced-pressure transfer chamber 602 under reduced pressure, and transferring the substrate to the outside under atmospheric pressure. Is transferred into the pressure adjustment transfer chamber 603, or the substrate is transferred from the pressure adjustment transfer chamber 603. A substrate loading and unloading a transfer mechanism 604 for, and a.

  The substrate processing apparatus 500 described in any of the first to third embodiments is mounted in each of the three processing chambers 601.

  Hereinafter, the operation of the substrate processing apparatus 600 according to the present embodiment will be described.

  First, the substrate to be processed is transferred into the pressure-adjusting transfer chamber 603 by the transfer mechanism 604 for loading and unloading the substrate under the atmospheric pressure.

  After the substrate is transferred into the pressure adjustment transfer chamber 603, the pressure adjustment transfer chamber 603 is cut off from the substrate loading / unloading transfer mechanism 604, and the inside of the pressure adjustment transfer chamber 603 is depressurized to a vacuum state. Under this condition, the substrate is transferred from the pressure adjustment transfer chamber 603 to the reduced pressure transfer chamber 602. The reduced-pressure transfer chamber 602 is always in a vacuum state.

  Next, the substrate is transferred from the reduced-pressure transfer chamber 602 to any one of the processing chambers 601, and is subjected to processing (for example, exposure processing or ashing processing) in the processing chamber 601.

  After the processing, the substrate is transferred from the processing chamber 601 to the reduced-pressure transfer chamber 602. If necessary, the substrate is transferred to another processing chamber 601 again, where another type of processing is performed.

  Next, the substrate is transferred from the reduced-pressure transfer chamber 602 to the pressure-adjusted transfer chamber 603 in a vacuum state. After the substrate is transferred into the pressure-adjusting transfer chamber 603, the internal pressure of the pressure-adjusting transfer chamber 603 is increased, and the state is shifted from a vacuum state to an atmospheric pressure state.

  Thereafter, the pressure-adjustment transfer chamber 603 releases the cut-off state from the substrate loading / unloading transfer mechanism 604 and unloads the processed substrate to the substrate loading / unloading transfer mechanism 604.

  Next, the substrate loading / unloading transfer mechanism 604 transports the substrate to the outside.

  As described above, according to the substrate processing apparatus 600 according to the present embodiment, the substrate can be continuously processed.

It is a sectional view showing the composition of the substrate processing device concerning a first embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating a substrate processing apparatus having a configuration similar to that of the substrate processing unit of the substrate processing apparatus of FIG. 1. FIG. 3 is a perspective view showing a gas blowing plate and a gas blowing plate frame in the substrate processing apparatus. 4 is a graph showing the reflow time dependency of the reflow distance of a coating film. 4 is a graph showing the vapor flow rate dependency of the uniformity of the thickness of the coating film after reflow in the substrate. 4 is a graph showing the uniformity of the thickness of a coating film after reflow in a substrate measured when the distance between a lifting stage and a gas blowing plate is changed. 4 is a graph showing the dependence of the reflow speed of a coating film on the temperature of an elevating stage. It is a sectional view showing the substrate processing unit provided with the same composition as the substrate processing unit of the substrate processing unit in the case of a second embodiment of the present invention. It is a sectional view showing the substrate processing unit provided with the same composition as the substrate processing unit of the substrate processing unit in the case of a third embodiment of the present invention. It is a sectional view showing the composition of the substrate processing device concerning a 4th embodiment of the present invention. FIG. 9 is a schematic cross-sectional view illustrating a conventional coating film flattening apparatus. It is sectional drawing which shows a part of manufacturing process of a thin-film transistor when the conventional planarization apparatus of a coating film is applied to the manufacturing process of a thin-film transistor. FIG. 13 is a cross-sectional view and a plan view illustrating a manufacturing process following FIG. 12.

Explanation of reference numerals

Reference Signs List 1 substrate 500 substrate processing apparatus 501 chamber 503 stage 33 exposure processing gas 21 gas blowing plate 600 substrate processing apparatus according to fourth embodiment

Claims (18)

In one chamber, in a state where a plurality of substrates are arranged at intervals in the vertical direction in a horizontal posture, a substrate processing apparatus that blows exposure processing gas to each of the plurality of substrates,
A chamber having at least one gas inlet and at least one gas outlet,
Gas introduction means for introducing an exposure processing gas into the chamber through the gas introduction port,
Gas distribution means provided corresponding to each of the plurality of substrates,
With
A plurality of openings are formed in the gas distribution means, and the exposure processing gas introduced through the gas introduction means is sprayed onto a corresponding substrate through the openings. Substrate processing equipment.   The substrate processing apparatus according to claim 1, wherein the gas distribution units are arranged at positions facing the corresponding substrates.   The substrate processing apparatus according to claim 1, wherein the chamber includes a plurality of the gas introduction ports.   4. The substrate processing apparatus according to claim 3, wherein each of the plurality of gas inlets is provided corresponding to each of the gas distribution units.   The substrate processing apparatus according to claim 3, wherein a gas flow control mechanism is provided for each of the gas introduction ports.   The substrate processing apparatus according to claim 1, wherein the gas distribution unit has a plate shape.   7. The substrate processing apparatus according to claim 6, wherein the gas distribution unit is formed in a curved shape that is convex or concave toward a corresponding substrate.   8. The substrate processing apparatus according to claim 1, wherein the gas distribution unit is rotatable around a center thereof.   The gas blowout range defining means for defining the blowout range of the exposure processing gas is disposed so as to overlap with the gas distribution means, and closes an arbitrary number of openings among the openings formed in the gas distribution means. The substrate processing apparatus according to claim 1, further comprising:   10. The substrate processing apparatus according to claim 1, wherein the stage on which the substrate is placed is formed to be vertically movable.   The substrate processing apparatus according to any one of claims 1 to 10, wherein the stage on which the substrate is mounted is formed so as to be rotatable around its axis.   The substrate processing apparatus according to claim 1, further comprising a substrate temperature adjusting unit that adjusts a temperature of the substrate.   13. The substrate processing apparatus according to claim 12, wherein the substrate temperature adjusting unit controls the temperature of the substrate by controlling a temperature of a stage on which the substrate is mounted.   The substrate processing apparatus according to claim 1, further comprising a gas temperature adjusting unit configured to adjust a temperature of the exposure processing gas.   The substrate processing apparatus according to claim 1, wherein a distance between the substrate disposed in the chamber and the gas distribution unit is set to 5 to 15 mm.   16. The substrate processing apparatus according to claim 1, further comprising a plasma generating mechanism for generating plasma in the chamber. The plasma generation mechanism includes an upper electrode portion disposed above the substrate, and a lower electrode portion disposed below the substrate,
17. The substrate processing apparatus according to claim 16, wherein one of the upper electrode unit and the lower electrode unit is grounded, and the other is grounded via a high frequency power supply. Connected to the chamber, the substrate is loaded into the chamber under reduced pressure, or a reduced-pressure transfer chamber for transferring the substrate from the chamber under reduced pressure;
The substrate is connected to the reduced-pressure transfer chamber, the substrate is loaded from the outside under atmospheric pressure, the substrate is loaded into the reduced-pressure transfer chamber under reduced pressure, and the substrate is transferred into the reduced-pressure transfer chamber under reduced pressure. And a pressure-adjusted transfer chamber for transferring the substrate to the outside under atmospheric pressure,
The substrate processing apparatus according to any one of claims 1 to 17, further comprising:

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