JP2004172605A - Apparatus and method for crystallization - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystallization apparatus which can form a crystal nucleus at a desired position and can realize sufficient lateral growth of the crystal nucleus to form a crystallized semiconductor film having a large grain size. <P>SOLUTION: This crystallization apparatus, which is provided with a mask (1) and an illumination system (2), applies light having light intensity distribution with inverted peak pattern on a semiconductor film (3) via the mask to form a crystallized semiconductor film. The mask is equipped with a light absorption layer having light absorption characteristics appropriate for light intensity distribution with inverted peak pattern, a light scattering layer having light scattering characteristics, a light reflection layer having light reflection characteristics, a light refraction layer having light refraction characteristics, or a light diffraction layer having light diffraction characteristics. <P>COPYRIGHT: (C)2004,JPO

Description

  The present invention relates to a semiconductor crystallization apparatus and a crystallization method, and more particularly, to an apparatus, a method, and a mask for irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with laser light through a mask to generate a crystallized semiconductor film. And so on.

  2. Description of the Related Art Conventionally, for example, a thin-film transistor (TFT) used for a switching element for controlling a voltage applied to a pixel of a liquid crystal display (LCD) is made of amorphous silicon (amorphous silicon). -Silicon) and poly-silicon (poly-Silicon).

Polycrystalline silicon has a higher electron mobility than amorphous silicon. Therefore, when a transistor is formed using polycrystalline silicon, the switching speed is faster than that when amorphous silicon is used, and the response of the display is faster. Further, such a transistor can be used as a thin film transistor of a peripheral LSI. Further, the use of such a transistor has an advantage that the design margin of other components can be reduced.
When peripheral circuits such as a driver circuit and a DAC are incorporated in a display in addition to the display main body, the peripheral circuits can be operated at higher speeds by using the above transistors.

  Polycrystalline silicon is composed of a collection of crystal grains, and has lower electron mobility than single crystal silicon or crystallized silicon. Further, in a small transistor formed using polycrystalline silicon, variation in the number of crystal grain boundaries in a channel portion poses a problem. Therefore, recently, in order to improve the electron mobility and reduce the variation in the number of crystal grain boundaries in the channel portion, a crystallization method for producing single crystal silicon having a large grain size has been proposed.

  As a crystallization method of this kind, a phase shift mask that is brought close to and in parallel with a polycrystalline semiconductor film or an amorphous semiconductor film by irradiating an excimer laser beam to generate a crystallized semiconductor film is referred to as “phase control ELA (Excimer Laser Annealing)”. )"It has been known. Details of the phase control ELA are disclosed, for example, in "Surface Science Vol. 21, No. 5, pp. 278-287, 2000".

  In the phase control ELA, an inverse peak pattern in which the light intensity is minimum or almost 0 at a point corresponding to the phase shift portion of the phase shift mask (a pattern in which the light intensity is almost 0 at the center and the light intensity sharply increases toward the periphery). Is generated, and light having the light intensity distribution of the reverse peak pattern is applied to the polycrystalline semiconductor film or the amorphous semiconductor film. As a result, a temperature gradient is generated in the melting region in accordance with the light intensity distribution, and a crystal nucleus is formed at a portion where solidification is first performed corresponding to a point where the light intensity is minimum or almost zero, and from the crystal nucleus toward the periphery. When the crystal grows in the lateral direction (lateral growth), a large single crystal grain is generated.

  A phase shift mask generally used in the related art is a so-called line type phase shift mask, which is constituted by two types of rectangular regions that are alternately repeated along one direction, and π is provided between the two regions. (180 degrees). In this case, as shown in FIG. 22, a boundary line 200 between two regions 201 and 202 having different thicknesses or different phases constitutes a phase shift portion. The light that has passed through such a phase shift mask has an inverse peak pattern such that the light intensity is substantially zero or minimum at a position on the line corresponding to the phase shift unit 200 and the light intensity increases one-dimensionally toward the periphery. The polycrystalline semiconductor film or the amorphous semiconductor film is irradiated with the light intensity distribution having the portion RP.

  As described above, in the related art using the line-type phase shift mask, the temperature is lowest along the line corresponding to the phase shift portion (boundary line 200), and the temperature is lowest in the direction orthogonal to the line corresponding to the phase shift portion. A temperature gradient develops along. In addition, the light intensity distribution in the middle part MP between two adjacent reverse peak pattern parts RP is generally accompanied by a (curve) irregular undulation (a wave-like distribution in which light intensity repeatedly increases and decreases). It is.

  In this case, it is desirable for the position control of the crystal nucleus to generate the crystal nucleus 210 at a position where the inclination is large or close to the lowest intensity point in the light intensity distribution of the reverse peak pattern portion RP, but the undulation of the intermediate portion is preferable. In some cases, the crystal nucleus 220 may be generated at a position where the light intensity is low (ie, at an undesired position). Further, even if a crystal nucleus is generated at a desired position, lateral growth started from the crystal nucleus toward the periphery stops at a portion where the light intensity decreases near the boundary between the reverse peak pattern portion RP and the intermediate portion MP. Tends to end up.

  The present invention has been made in view of the above-described problems, and can generate a crystal nucleus at a desired position, realize sufficient lateral growth from the crystal nucleus, and form a crystallized semiconductor film having a large grain size. It is an object of the present invention to provide a crystallization apparatus and a crystallization method capable of producing crystallization.

According to a first aspect of the present invention, there is provided an illumination system for illuminating a mask, wherein light having a light intensity distribution of a reverse peak pattern is provided through the mask to a polycrystalline semiconductor film or an amorphous semiconductor. A crystallization apparatus for irradiating a film to produce a crystallized semiconductor film,
The mask has a light absorption layer having a light absorption property according to the light intensity distribution of the reverse peak pattern, a light scattering layer having a light scattering property, a light reflection layer having a light reflection property, and a light refraction layer having a light refraction property. And / or a crystallization device provided with a light diffraction layer having light diffraction characteristics.
One of the first and second layers may be exchanged for a phase shift layer.

In a second embodiment of the present invention, a crystallized semiconductor film is generated by illuminating a mask and irradiating light having a light intensity distribution of a reverse peak pattern to the polycrystalline semiconductor film or the amorphous semiconductor film through the mask. A crystallization method,
A light absorption layer having light absorption characteristics according to the light intensity distribution of the reverse peak pattern, a light scattering layer having light scattering characteristics, a light reflection layer having light reflection characteristics, a light refraction layer having light refraction characteristics, and / or light A crystallization method using a mask provided with a light diffraction layer having diffraction characteristics is provided.

  According to the technique of the above embodiment of the present invention, the form of the light intensity distribution of the inverse peak pattern obtained on the substrate to be processed is entirely controlled using a mask capable of arbitrarily forming an intermediate light intensity distribution. Therefore, a crystal nucleus can be generated at a desired position, and sufficient lateral growth from the crystal nucleus can be realized to produce a crystallized semiconductor film having a large grain size.

An embodiment of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing a configuration of a crystallization apparatus according to the first embodiment of the present invention. The crystallization apparatus according to the first embodiment includes an illumination system 2 that illuminates a mask 1. The illumination system 2 includes a KrF excimer laser light source 2a that supplies light having a wavelength of, for example, 248 nm. Other suitable light sources such as a XeCl excimer laser light source can be used as the light source 2a. The laser light supplied from the light source 2a is expanded via the beam expander 2b, and then enters the first fly-eye lens 2c.

  Thus, a plurality of small light sources are formed on the rear focal plane of the first fly-eye lens 2c, and light beams from these plurality of light sources enter the second fly-eye lens 2e via the first condenser optical system 2d. The surface is illuminated superimposed. As a result, more small light sources are formed on the rear focal plane of the second fly-eye lens 2e than on the rear focal plane of the first fly-eye lens 2c. Light beams from a plurality of light sources formed on the rear focal plane of the second fly-eye lens 2e illuminate the mask 1 in a superimposed manner via the second condenser optical system 2f.

  Here, the first fly-eye lens 2c and the first condenser optical system 2d constitute a first homogenizer, and the first homogenizer achieves a uniform intensity with respect to the incident angle of light on the mask 1. Further, the second fly-eye lens 2e and the second condenser optical system 2f constitute a second homogenizer, and the second homogenizer achieves a uniform intensity with respect to an in-plane position on the mask 1. Therefore, the illumination system 2 irradiates the mask 1 with light having a substantially uniform light intensity distribution.

  The laser beam that has passed through the mask 1 is applied to the substrate 3 that is disposed in parallel with and close to the mask 1. Here, the substrate 3 to be processed is obtained, for example, by sequentially forming a base film and an amorphous silicon film on a glass plate for a liquid crystal display by a chemical vapor deposition method. In other words, the mask 1 is set so as to face the amorphous semiconductor film. The substrate 3 to be processed is held at a predetermined position on the substrate stage 4 by a vacuum chuck, an electrostatic chuck, or the like.

  The configuration and operation of the basic unit of the mask according to the first embodiment will be described with reference to FIG. The mask 1 is composed of a transparent substrate 1b in the form of a plane-parallel plate formed of a transparent material such as quartz glass, and a light absorbing layer 1c formed of a predetermined light absorbing material and having a predetermined surface shape. ing. This mask has at least one, generally a plurality of basic unit parts 1a, and in FIG. 2 only one basic unit part 1a is shown for clarity of the drawing. It is preferable that the mask 1 actually has a form in which the basic unit portion 1a is one-dimensionally repeated along the direction in which the transmittance distribution intensity changes (the horizontal direction in FIG. 2). That is, a plurality of elongated rectangular areas are arranged in a horizontal direction on one substrate so that adjacent ones have a common long side, and a basic unit portion 1a is formed in each rectangular area. This is the same in the masks according to the following modifications and embodiments.

  As the light absorbing material, for example, at least one of materials used in a halftone phase shift mask, that is, MoSi, MoSiON, ZrSiO, a-Carbon, SiN / TiN, TiSiN, Cr, or the like can be used. To manufacture the mask 1, a light absorbing film made of, for example, ZrSiO is formed with a uniform thickness on the transparent substrate 1b, and then a resist is applied to the surface of the light absorbing film. Then, a resist film having a continuous curved surface shape is formed by performing electron beam lithography and development processing while continuously changing the dose so that both sides are thin and the center is thick in each basic unit portion 1a. Using an etching technique, the resist film and the surface of the substrate under the film are removed from the resist film side. By such etching, the central portion of the light absorption film on which the thick resist film is located is etched shallower than the portions on both sides where the thin resist film is located. As a result, it is possible to obtain the mask 1 including the light absorbing layer 1c having a continuous curved surface as shown in FIG.

  In the above-described manufacturing method, for example, by repeating formation and patterning of the light absorbing film a plurality of times, the mask 1 having the light absorbing layer 1c having a step-shaped surface (for example, a surface approximated by an 8-level step) is provided. You can also get This technique is described in more detail below. First, a resist film is applied except on both outer portions of a predetermined width of the light absorbing film on each rectangular area of the substrate, and by etching, only the outermost portions of both sides have a predetermined width and a predetermined depth. Etch. Next, a resist film is applied on the portion of the light absorbing film excluding the etched outermost portions and the outer portion having a predetermined width adjacent thereto. Then, by performing the same etching, the outer portion is etched to a predetermined width and a predetermined depth, and the outermost portion is further etched to a depth corresponding to the etching depth. As a result, a step is formed between the outermost part and the outer part. In this way, by performing the etching six times with the etched portion gradually toward the center, the light absorbing film is formed so that the center becomes the most protruding convex shape at the 8-level step. Can be. This example is an example, and it can be understood that the steps need not be formed as described above, and the number of steps is not limited to eight.

  When the mask 1 having such a configuration is illuminated by the illumination system 2 with light having a substantially uniform light intensity distribution, light transmitted through the mask 1 is transmitted to the light absorption layer 1c on the surface 3a of the substrate to be processed. Has a light intensity distribution in which the light intensity is the smallest at a position corresponding to the center of the convex portion of the light-emitting portion and the light intensity monotonically increases toward the periphery thereof, that is, a light intensity distribution of an inverted peak pattern (or a concave pattern).

  As described above, in the first embodiment, since the mask 1 including the light absorption layer 1c having the light absorption characteristics corresponding to the light intensity distribution of the desired reverse peak pattern is used, the mask 1 is obtained on the substrate 3 to be processed. It is possible to control the form of the light intensity distribution as a whole, and to obtain a light intensity distribution in which the light intensity monotonically increases from the center to the periphery as shown by the curve in FIG. As a result, a crystal nucleus can be generated at a position where the inclination is large (that is, a desired position) almost at the center of the light intensity distribution of the reverse peak pattern, and unlike the related art, there is a portion where the light intensity decreases in the middle part. Therefore, a large crystal can be grown without stopping lateral growth halfway. In this case, in such a mask 1a, the largest protruding portion of the light absorbing film 1c, in this embodiment, the center of each basic unit portion 1a is accurately positioned on the transparent substrate 1b. When the positioning between the substrate 3 and the substrate 3 is improved, a crystal nucleus can be generated at a desired position on the substrate 3a, and sufficient lateral growth from the crystal nucleus can be realized to achieve a large grain size crystal. Semiconductor film can be generated.

  Next, a mask according to a first modification will be described with reference to FIGS. In the following description, unless otherwise specified, the material and shape of the transparent substrate, and the relationship between the basic unit and the mask are the same as those in the first embodiment, and a detailed description thereof will be omitted. Referring to FIG. 3, the basic unit portion 11a of the mask 11 according to the first modification is attached to a transparent substrate 11b and one surface of the transparent substrate 11b, and the light according to the light intensity distribution of a desired reverse peak pattern is provided. And a light scattering layer 11c having scattering properties. The light scattering layer 11c may be formed, for example, by forming fine irregularities (surface relief) on the light incident surface and / or light exit surface of the transparent layer on the order of the wavelength of the illuminating light, or inside the transparent layer along the transparent layer. To form a predetermined fine refractive index distribution.

When light is incident on the light scattering layer 11c, as shown in FIG. 4, light L1 that is directly transmitted without being dispersed (directly transmitted light), light L2 that is scattered backward (backscattered light) L2, and light that is scattered forward Light L3 (forward scattered light). In FIG. 4, the back scattered light L2 is shown to be emitted from the light incident surface, and the forward scattered light L3 is shown to be emitted from the light emission surface. However, the position where the scattered light is emitted is not limited to this. It can be easily understood that the structure depends on the structure of the scattering layer. When such a mask is used, there is a possibility that the forward scattered light L3 may reach the surface 3a of the substrate 3 to be processed and become noise. Is ensured, the intensity distribution of the forward scattered light reaching the surface 3a becomes substantially uniform, and does not become noise.
Thus, basically, the light intensity distribution of the directly transmitted light of the mask according to the first modification example corresponds to the light intensity distribution formed on the surface 3a of the substrate 3 to be processed.

With reference to FIG. 5, a basic description of light scattering will be given. In general, scattering by a particle b having a diameter a of about the wavelength of incident light (for example, a gap described later) can be calculated by Mie's scattering theory. Referring to FIG. 5, the intensity I after the parallel beam having the intensity I ₀ has passed through the material having the thickness L having the particle b therein is expressed by the following equation (1). In Expression (1), σ is a light intensity attenuation coefficient, and is represented by the following Expression (2).
I = I ₀ e ^-σL (1)
σ = NKπa ² (2)

Here, N is the number of particles per unit volume, and a is the radius of the particles b. K is the scattering efficiency of particles, and is a value calculated by Mie's scattering theory. When the radius a of the particle is equal to or greater than the wavelength, the value of K is about 4 to 2. As an example, when the radius a of the particle b is 0.39 μm, the number N of particles per unit volume is 0.24 / μm ^3, and the scattering efficiency K of the particle b is 2.0 (approximate), the attenuation coefficient σ is 0.23 / μm. Accordingly, the light intensity I after passing through a film having a thickness of L = 10 μm in which particles are distributed at a density of N is I = I ₀ e− ^σL = 0.1 × I ₀ , and the intensity I ₀ of the incident light is The light intensity becomes 1/10.

  In this way, the distribution of the light intensity can be changed by appropriately selecting the attenuation coefficient σ depending on the location according to the above formula (1) or by appropriately varying the thickness L of the material (base layer) depending on the location. Can be controlled. As the radius a of the particle increases, the attenuation coefficient σ can increase. However, since the forward scattered light increases and the scattered light component (= noise) reaching the substrate 3 increases as compared with the back scattered light, It is necessary to design in consideration of this point.

Next, with reference to FIGS. 6A to 6E, an example of a method for manufacturing a mask according to a first modification and an example of use will be described.
Each of the particles b is a sphere or a rectangle. It can be formed in any shape and / or material, such as irregular shapes.

  As shown in FIG. 6B, a resin layer 13 having an uneven shape was formed on a quartz glass substrate 11b as a base material by resin molding using the mold 12 shown in FIG. 6A. The mold 12 is an original plate formed by mechanically cutting a Ni plate. Here, the pitch P of the unevenness was 10 μm, and the depth D was 5 μm. An organic SOG film (spin-on glass, for example, in which alkoxysilane is substituted with an alkyl group) 14 having a flat upper surface, and xylene 15 as a volatile material having no compatibility with this material, are formed on the resin 13 having the uneven shape. After addition, it was formed by spin coating, as shown in FIG. 6C.

  Then, by volatilizing the volatile substance 15 by drying, fine voids 16 having an average radius of about 0.4 μm were formed in the organic SOG film as shown in FIG. 6D. At this time, since the surface of the SOG film 14 is flat, the thickness distribution of the SOG film 14 depends on the thickness distribution of the resin mold layer 13, and in this example, the thickest portion of the SOG film 14 is about 10 μm. It was set to become. The refractive index of the SOG film 14 is about 1.5, the refractive index of the air gap (air) 16 is 1, and this difference in refractive index causes scattering. The mask 11 manufactured in this manner was held at a position 20 μm away from the substrate 3 to be processed, and the mask 11 was illuminated with a XeCl excimer laser beam (wavelength 308 nm) from a substantially vertical direction. As a result, a light intensity distribution of a desired reverse peak pattern (concave pattern) was formed, and a crystal having a large grain size could be generated. At this time, forward scattered light was generated, but became substantially uniform on the surface of the substrate 3 to be processed, and the influence thereof could be neglected.

  The basic unit of the mask according to the second modification will be described below with reference to FIG. The basic unit portion 21a of the mask 21 is composed of a transparent substrate 21b and a light reflection layer 21c formed on the light emission surface of the substrate and having a light reflection characteristic according to a desired reverse peak pattern light intensity distribution. ing. The light reflection layer 21c is configured as a multilayer reflection film formed according to a predetermined layer number distribution.

The multilayer reflective film has a configuration in which dielectrics having different refractive indices are alternately laminated, and basically does not absorb light. Therefore, the value obtained by subtracting the reflectance from 1 is the transmittance. Therefore, the reflectance increases (the transmittance decreases) in the portion having a large number of layers, and the reflectance decreases (increases the transmittance) in the portion having a small number of layers. However, it is desirable that the relationship between the number of layers of the multilayer reflective film and the value of the reflectance is obtained by strict calculation according to a desired light intensity pattern.
The light reflection layer 21c may be configured as a metal reflection film formed according to a predetermined thickness distribution. However, in this case, it is necessary to control the thickness distribution of the extremely thin metal reflection film.

With reference to FIGS. 8A to 8E, an example of a method for manufacturing a mask according to the second modification and an example of use will be described. As shown in FIG. 8A, a multilayer reflective film 21c composed of an MgF ₂ layer and a ZnS layer was formed by alternately depositing MgF ₂ and ZnS on a quartz glass substrate 21b as a base material of a mask. . Next, as shown in FIG. 8B, an electron beam resist 22 was spin-coated on the multilayer reflective film 21c. Thereafter, as shown in FIG. 8C, irradiation and development were performed while continuously changing the dose amount (irradiation amount) by an electron beam lithography apparatus, whereby a concave-convex resist film 22 was obtained.

  Next, by performing dry etching on the resist film 22 and the multilayer reflective film 21c, as shown in FIG. 8D, a multilayer reflective film 21c having a predetermined layer number distribution was obtained. Here, the portion with a large number of layers, that is, the central portion has a high reflectance, that is, low transmittance, and the portion with a small number of layers, that is, both sides, has a low reflectance, that is, a high transmittance, and the central portion has a high reflectance. The transmittance between the side portion and the side portion gradually increases toward the side portion. The mask 21 thus manufactured was held at a position 20 μm away from the substrate 3 to be processed, and the mask 21 was illuminated with a XeCl excimer laser beam (wavelength 308 nm) from a substantially vertical direction as shown by an arrow (FIG. 8E). . As a result, a light intensity distribution of a desired reverse peak pattern (concave pattern) was formed, and a crystal having a large grain size could be generated.

  The configuration and operation of the basic unit of the mask according to the modification will be described with reference to FIG. The basic unit portion 31a of the mask 31 according to the third modification is attached to a transparent substrate 31b and an emission surface of the substrate, and has a light refraction layer having a light refraction characteristic according to a light intensity distribution of a desired reverse peak pattern. 31c. The light refraction layer 31c can be formed by, for example, forming the surface of the transparent layer into a required curved surface or forming a predetermined refractive index distribution inside the transparent layer.

  In order to manufacture the mask 31 according to the third modification, a resist is applied as a transparent layer, for example, on the surface of a quartz glass substrate, and electron beam writing and development are performed while continuously changing the dose. A resist film having a curved surface shape is generated. Thereafter, the mask 31 having a continuous curved refraction surface can be obtained by using the dry etching technique. For example, by repeating formation and patterning of the resist film a plurality of times, the mask 31 having a step-shaped refraction surface can be obtained. The above technique was described when the mask shown in FIG. 2 was formed, and thus detailed description is omitted.

  FIG. 10 is a diagram showing a simulation result regarding a light intensity distribution that would be obtained when a mask having a refraction surface formed in a step shape (formed by the latter manufacturing method) according to the third modification is used. is there. In this simulation, the refraction surface of the mask 31 according to the third modification is approximated by an 8-level step corresponding to a phase difference of 22.5 degrees to 180 degrees. Further, the numerical aperture of the illumination system 2 is set to 0.025, and the light intensity distribution on the processing target substrate 3 arranged at a distance of 40 μm from the mask 31 is obtained by calculation. As shown in FIG. 10, even if the refraction surface of the mask 31 is approximated in multiple stages, a desired light intensity distribution of a reverse peak pattern (concave pattern) as a whole will be obtained.

  With reference to FIG. 11, the configuration and operation of the basic unit of the mask according to the fourth modification will be described. The basic unit portion 41a of the mask 41 according to the fourth modified example is attached to or integrally formed with the transparent substrate 41b and at least one surface thereof, in this example, the light emitting surface, and forms a light intensity distribution of a desired reverse peak pattern. And a light diffraction layer 41c having a corresponding light diffraction characteristic. The light diffraction layer 41c can be formed by, for example, forming at least one surface of the transparent layer into a required shape, or forming a predetermined refractive index distribution or light absorption rate distribution inside the transparent layer. In order to realize a mask with high diffraction efficiency (light use efficiency), a technology to form the surface into a required shape or a technology to form a refractive index distribution inside is better than a technology to form a light absorption distribution inside. Is preferred.

  The light diffraction layer 41c is realized as a so-called diffraction grating (or hologram). In the mask 41 according to the fourth modification, light is diffracted by a diffraction grating (or hologram), and a required light intensity distribution is formed on the surface 3a of the substrate to be processed at a predetermined distance. In this case, the diffraction grating (or hologram) may be one provided with one type of interference fringe or one provided with a plurality of interference fringes. Diffraction gratings are classified into a non-scattering type having no scattering on the mask surface and a scattering type having scattering on the mask surface, depending on the presence or absence of a scattering function on the mask surface. Hereinafter, the case of the non-scattering type in which there is no scattering on the mask surface, that is, the case of one type of interference fringe will be briefly described.

FIG. 12 is a diagram schematically illustrating a basic diffraction effect of the mask according to the fourth modification. Light incident on a diffraction grating (or hologram) having a period d formed on the mask surface at an incident angle θ is emitted at an emission angle φ due to a diffraction effect. Here, the relationship between the incident angle θ and the exit angle φ is represented by the following diffraction equation (3).
sinθ + sinφ = mλ / d (3)

  In equation (3), m is the diffraction order, and λ is the wavelength of light. In the fourth modification, referring to equation (3), the pitch d of the diffraction grating on the mask surface is set so that a desired light intensity distribution is obtained on the surface 3a of the substrate 3 to be processed separated by a predetermined distance. And the direction may be obtained by calculation.

  Next, an example of a method for manufacturing a mask according to a fourth modification and an example of use will be described with reference to FIG. In the mask 41 of the fourth modification, a blazed diffraction grating as shown in FIG. 13 is formed on one surface of the transparent substrate 41b by a method similar to that of the second modification (however, a quartz glass substrate is etched instead of the multilayer reflective film). As a light diffraction layer 41c. This type of diffraction grating is called a hologram optical element or a diffractive optical element, and has been put to practical use. The diffraction grating has a pitch that changes in a one-dimensional direction, and has a function of condensing light linearly at the focal position. The non-scattering type (one type of interference fringe) mask 41 manufactured in this manner is held so as to face a position separated by a focal distance D from the substrate 3 to be processed, and is almost vertically irradiated with XeCl excimer laser light (wavelength 308 nm). The mask 41 was illuminated in a state of a non-parallel light beam (scattered light beam) having a predetermined maximum incident angle from.

  As a result, a light intensity distribution of a desired reverse peak pattern (concave pattern) was formed, and a crystal having a large grain size could be generated. Such a diffractive mask can also be manufactured by holographic exposure. In this case, the linear object light may be generated by an optical means such as a slit or a cylindrical lens, and interference fringes between the linear object light and the reference light may be recorded on the hologram photosensitive material. Either a scattering type or a non-scattering type can be realized by using a method of recording in a holographic manner or a method of manufacturing by the above calculation.

  In the above embodiments and modifications, the basic unit portion of the mask forms a one-dimensional light intensity distribution, and the mask has the basic unit portion repeated one-dimensionally along the direction of the light intensity distribution. Having. However, without being limited to this, the basic unit portion of the mask forms a two-dimensional light intensity distribution, and the mask has a form in which the basic unit portion is two-dimensionally repeated along the direction of the light intensity distribution. It can also be configured to have.

  Next, a configuration of a crystallization apparatus according to a second embodiment of the present invention will be described with reference to FIG. The second embodiment has a configuration similar to that of the first embodiment. However, the second embodiment is different from the first embodiment in that the light exit surface of the mask 1 and the light entrance surface of the substrate 3 are arranged in close contact with each other. This is basically different from the first embodiment. As described above, in the first embodiment according to the so-called proximity (defocus) method, the light absorption type mask 1, the light scattering type mask 11, the light reflection type mask 21, the light refraction type mask 31, and the light A diffraction type mask 41 can be used.

  On the other hand, in the second embodiment according to the so-called contact method, a light absorption type mask 1, a light scattering type mask 11, and a light reflection type mask 21 can be used. The mask 31 and the light diffraction type mask 41 cannot be used. Further, as described above, when the forward scattered light reaches the processing target substrate 3 and forms noise, the light scattering type mask 11 cannot be used in the second embodiment.

  Next, a configuration of a crystallization apparatus according to a third embodiment of the present invention will be described with reference to FIG. The third embodiment has a configuration similar to that of the first embodiment, except that an imaging optical system 5 is provided in the optical path between the mask 1 and the substrate 3 in the third embodiment. It is basically different from the form. In the third embodiment, as shown in FIG. 15, the processing target substrate 3 is set at a predetermined distance from the plane optically conjugate to the mask 1 (the image plane of the imaging optical system 5) along the optical axis. ing. The imaging optical system 5 may be a refraction type optical system, a reflection type optical system, or a refraction / reflection type optical system. In the third embodiment according to the so-called projection defocus method, similarly to the first embodiment, a light absorption type mask 1, a light scattering type mask 11, a light reflection type mask 21, a light refraction type mask 31, and An optical diffraction type mask 41 can be used.

  In the first embodiment and the second embodiment, it is necessary to pay attention to the ablation on the substrate 3 to be processed. On the other hand, in the third embodiment, the imaging optical system 5 is interposed between the mask 1 and the processing target substrate 3, and the distance between the processing target substrate 3 and the imaging optical system 5 is relatively large. Therefore, good crystallization can be realized without being affected by ablation in the substrate 3 to be processed.

  In the third embodiment, since the distance between the processing target substrate 3 and the imaging optical system 5 is relatively large, detection light for position detection is introduced into an optical path between the processing target substrate 3 and the processing target substrate 4. It is easy to adjust the positional relationship between the lens and the imaging optical system 5.

  FIG. 16 schematically shows a configuration of a crystallization apparatus according to the fourth embodiment of the present invention. The fourth embodiment has a configuration similar to that of the third embodiment, except that the mask 1 and the substrate 3 are optically conjugated via the imaging optical system 6 in the fourth embodiment. This is basically different from the third embodiment. Hereinafter, the fourth embodiment will be described focusing on the differences from the third embodiment.

  In the fourth embodiment, the imaging optical system 6 has an aperture stop 6a arranged on the pupil plane. The aperture stop 6a is selected from one of a plurality of aperture stops having different sizes of apertures (light transmitting portions), and the plurality of aperture stops are configured to be exchangeable with respect to an optical path. Alternatively, the aperture stop 6a has one iris stop capable of continuously changing the size of the opening. In any case, the size of the aperture of the aperture stop 6a (and, consequently, the image-side numerical aperture of the imaging optical system 6) generates a light intensity distribution of a required reverse peak pattern on the semiconductor film of the substrate 3 to be processed. It is set as follows.

  In the fourth embodiment according to the so-called projection NA method, similarly to the first embodiment and the third embodiment, a light absorption type mask 1, a light scattering type mask 11, a light reflection type mask 21, and a light refraction type mask. A mask 31 and a light diffraction type mask 41 can be used. Also in the fourth embodiment, similarly to the third embodiment, good crystallization can be realized without being affected by ablation in the substrate 3, and the substrate 3 and the imaging optical system 6 can be realized. It is easy to adjust the positional relationship with.

  Next, a crystallization apparatus according to a fifth embodiment of the present invention will be described with reference to FIGS. 17A and 17B. Although the fifth embodiment has a configuration similar to that of the first embodiment, the fifth embodiment is basically different from the first embodiment in that the mask 51 has two functional layers. As shown in FIG. 17A, a basic unit portion 51a of a mask 51 according to the fifth embodiment includes a photorefractive layer 51b having a photorefractive characteristic according to a light intensity distribution of a desired reverse peak pattern, and a desired reverse peak pattern. And a light-absorbing layer 51c having a light-absorbing characteristic according to the light intensity distribution of the light-absorbing light.

  Here, the light refraction layer 51b arranged at a predetermined distance from the surface 3a of the substrate to be processed has a gentle reverse peak pattern (concave pattern) on the surface 3a as shown by a curve indicated by a broken line 51bb in the figure. Form an intensity distribution. On the other hand, the light absorbing layer 51c disposed very close to (or in close contact with) the surface 3a of the substrate to be processed has a steeper reverse peak pattern (not shown) on the surface 3a than the light refraction layer 51b. Form an intensity distribution.

  As a result, in the fifth embodiment using the mask 51, the light intensity of the two-step reverse peak pattern is obtained by combining the operation of the light refraction layer 51b and the operation of the light absorption layer 51c, as shown by the curve indicated by the solid line 51bc in FIG. 17A. A distribution is obtained on the surface 3a of the substrate to be processed. In the light intensity distribution of the two-step reverse peak pattern shown in FIG. 17A, the light intensity rapidly increases from the position where the light intensity is almost 0 or the minimum toward the periphery, reaches a predetermined value, and then further increases toward the periphery. The light intensity increases almost monotonically. At the position where the light intensity is almost 0 or the minimum, the light intensity is set so that the temperature of the surface 3a is, but not necessarily, lower than the melting point of the material forming the surface, for example, amorphous silicon. It is desirable to set.

  In the fifth embodiment, a crystal nucleus is formed near a portion where the light intensity is minimum in the light intensity distribution of the two-step reverse peak pattern. Next, lateral growth is started from the crystal nucleus along a direction in which the light intensity gradient (and thus the temperature gradient) is large and toward the periphery. At this time, in the light intensity distribution of the two-step reverse peak pattern obtained by the mask according to the present invention, unlike the related art, there is substantially no portion where the light intensity decreases in the middle part, so the lateral growth is stopped halfway. The growth of large crystal grains can be realized without performing.

  If the light intensity distribution of the two-stage reverse peak pattern as described above is to be obtained only with the light absorbing layer 51c, the change in the film thickness of the light absorbing layer 51c is very large. Since the combination is used, there is an advantage that the film thickness distribution of the light absorbing layer 51c becomes unnecessary or extremely small. Similarly, when trying to realize a light intensity distribution of a two-step reverse peak pattern only with the light refraction layer 51b, the surface shape or the refractive index distribution of the light refraction layer 51b becomes very complicated, but the combination of the two functional layers is Since the light refraction layer 51b is used, it is sufficient that the light refraction layer 51b has a light intensity distribution of a concave pattern, and a relatively simple surface shape or refractive index distribution is sufficient.

  In the above-described fifth embodiment, the mask 51 having the light refraction layer 51b and the light absorption layer 51c is used. However, the present invention is not limited to this combination of functional layers, and any two or more different functional layers may be used. Alternatively, a mask having two or more identical functional layers can be used. Specifically, as the first functional layer and the second functional layer constituting the mask, it is possible to select an arbitrary functional layer from a light absorption layer, a light scattering layer, a light reflection layer, a light refraction layer, and a light diffraction layer. it can.

  In the above-described fifth embodiment, the light refraction layer 51b and the light absorption layer 51c are arranged at an interval. However, the present invention is not limited to this. It can also be formed or arranged. Various modifications are possible for the arrangement of the two functional layers. Specifically, for example, when a refracting surface is provided to the light absorbing material, the light absorbing layer and the light refracting layer are integrally formed. When a phase shift surface is provided to the light absorbing material, for example, the light absorbing layer and the phase shift layer are integrally formed. This example is shown in FIG. 17B. The mask 100 is formed by using a phase shifter 100a as shown in FIG. 22 as a transparent substrate, and mounting a light absorbing layer 100c as a functional layer as shown in FIG. 2 on the light emitting surface. . Here, the functional layer is not limited to the light absorption layer, but has a light absorption layer, a scattering layer, a light reflection layer, and a light refraction layer (31c) having light absorption characteristics according to the light intensity distribution of the reverse peak pattern. , And light diffractive layers. Also, it will be understood that whichever of the functional layer and the phase shifter is arranged on the light incident side, it will be understood that the function layer and the phase shifter are arranged at the same time.

  In the above-described fifth embodiment, the present invention is applied to the crystallization apparatus and method according to the defocus method. However, the present invention is not limited thereto, but according to the contact method, the projection defocus method, or the projection NA method. The present invention can be applied to a crystallization apparatus and method.

  With reference to FIGS. 18A to 18C, an example of a method of manufacturing a mask in which a light reflecting layer and a light absorbing layer are integrally formed and an example of use will be described. In this manufacturing example, a multilayer reflective film having a predetermined layer number distribution on a quartz glass substrate 52, for example, is formed by the method described with reference to the second modification of the first embodiment (see FIGS. 8A to 8E). The light reflecting layer 53 was formed as shown in FIG. 18A. Next, a chromium layer is formed on the thickest region of the light reflection layer 53 by sputtering, and resist coating, exposure, development, and etching are performed to form a light absorption layer 54 having a chromium pattern as shown in FIG. 18B. Formed.

  The mask 55 manufactured as described above is held at a position in close contact with the substrate 3 to be processed, or as shown in FIG. 18C, at a position separated by a predetermined distance from the substrate 3 to be processed, and XeCl excimer laser light (wavelength 308 nm), the mask 55 was illuminated as indicated by the arrow from a substantially vertical direction. As a result, a desired two-step reverse peak pattern light intensity distribution was formed, and a crystal having a large grain size could be generated. Here, the light reflection layer 53 has a function of forming a light intensity distribution of a gentle reverse peak pattern (concave pattern), and the light absorption layer 54 has a function of forming a light intensity distribution of a steep reverse peak pattern.

  With reference to FIGS. 19A to 19DC, a mask used in a crystallization apparatus according to the sixth embodiment of the present invention and its operation will be described. The sixth embodiment has a configuration similar to that of the first embodiment, but is basically different from the first embodiment in that the mask 61 has a binary distribution characteristic. In the basic unit portion 61a of the mask 61 according to the sixth embodiment, as shown in FIGS. 19A and 19D, for example, a large number of minute light absorption unit regions 61c are formed on a quartz glass substrate 61b according to a predetermined dot distribution. It is formed discretely. In this example, the light absorption unit area 61c has a circular shape, and the area between the areas is wider toward the outside in the width direction (horizontal direction in FIG. 19D) and equal in the length direction. I have.

The shape and distribution of the light absorption unit region 61c are not limited to the above configuration, and can be arbitrarily set according to a required light intensity pattern. For example, as shown in FIG. 19E, the light absorption unit region 61c may have an elongated layer shape.
On the emission surface of the mask 61 having the above configuration, a strip-shaped discontinuous light intensity distribution is obtained as shown in FIG. 19B. However, on the surface 3a of the substrate to be processed, which is spaced from the emission surface of the mask 61, the defocus is used to remove the high-frequency component of the spatial frequency, as shown in FIG. 19C. A light intensity distribution of a reverse peak pattern can be obtained.

  In the above-described sixth embodiment, the minute light absorption unit regions 61c formed according to the predetermined distribution are used. However, the present invention is not limited to this. For example, the minute light scattering units formed according to the predetermined distribution may be used. A unit area or a minute light reflection unit area can be used (however, a minute light refraction unit area or a minute light diffraction unit area cannot be used). That is, in general, a continuous light intensity is cut (removed) by using a mask having a binary structure instead of a material or structurally continuous distribution characteristic and cutting (removing) a high frequency component of a spatial frequency. A distribution can be obtained. In this case, a difficult process of realizing a continuous distribution in terms of material or structure becomes unnecessary.

  In the above-described sixth embodiment, the high-frequency component is removed by separating the emission surface of the mask 61 and the surface 3a of the substrate to be processed. However, the present invention is not limited to this. The high frequency component can also be removed by separating the substrate to be processed from a plane optically conjugate with the mask via an imaging optical system arranged in the optical path between the two. Specifically, for example, in the apparatus shown in FIG. 15, the mask 61 of this embodiment may be used as the mask 1. In particular, in a defocusing method or a projection defocusing method, high-frequency components can be removed by illuminating a mask with a non-parallel light beam having a predetermined maximum incident angle.

  Furthermore, the high-frequency component is removed by arranging the substrate to be processed and the mask optically substantially conjugate via the imaging optical system and setting the image-side numerical aperture of the imaging optical system to a required value. You can also. In addition, high-frequency components can be removed by imparting a required aberration to the imaging optical system arranged in the optical path between the substrate to be processed and the mask.

Hereinafter, a case where the high-frequency component is removed by setting the image-side numerical aperture of the imaging optical system to a required value will be briefly described. The complex amplitude distribution I (u, v) of the image via the imaging optical system is represented by the complex amplitude distribution O (u, v) of the object (mask) and the complex The amplitude distribution (point spread function) is represented by convolution with ASF (u, v). In equation (4), “∫” is an integral symbol.
I (u, v) = {{O (u ', v') ASF (u-u ', v-v')} du'dv '(4)

  Here, the point spread function ASF is given by Fourier transform of a pupil function. That is, when the image-side numerical aperture of the imaging optical system is small, the point spread function has a wider distribution, and the blur of the image is increased. This means that high-frequency components in the spatial frequency of the object are cut off, and functions as a kind of high-cut filter. As a result, even if the object is binary, the high-frequency component is cut off, and a continuous light intensity distribution is obtained.

  With reference to FIG. 20, an example of a method for manufacturing a mask having binary distribution characteristics and an example of use will be described. In this embodiment, a chrome mask is used as a mask. That is, as shown in FIG. 20, the fine chromium regions 61c are formed on the transparent substrate 61b so as to be distributed in a binary manner based on a pattern in which the aperture ratio increases as the distance from the center increases as a whole. A basic unit portion 61a of the mask was manufactured. In the case of the bk chrome mask, the chrome layer 61c functions as a light absorbing layer and also functions as a light reflecting layer.

  The mask thus manufactured was applied to the projection NA method, and the high-frequency component was cut by setting the image-side numerical aperture of the imaging optical system to 0.05. As a result, a light intensity distribution of a desired reverse peak pattern (concave pattern) or a two-step peak pattern was formed, and a crystal having a large grain size could be generated. In the example of FIG. 20, only the aperture ratio in one direction is modulated, but only the aperture ratio in the other direction can be modulated, or the aperture ratio can be two-dimensionally modulated along both directions. You can also. Further, the density of the minute openings having a certain size can be modulated.

  In each of the above embodiments, the light intensity distribution can be calculated at the design stage, but it is desirable to observe and confirm the actual light intensity distribution on the surface to be processed (exposed surface). For this purpose, the surface to be processed may be enlarged by an optical system and input by an image pickup device such as a CCD. When the used light is ultraviolet light, the optical system is restricted, so that a fluorescent plate may be provided on the surface to be processed to convert the light into visible light.

An example of a method for manufacturing an electronic device using the crystallization apparatus of each embodiment will be described below with reference to FIG. As shown in FIG. 21A, a base film 81 (for example, a 50 nm-thick SiN film) is formed on a rectangular insulating substrate 80 (for example, alkali glass, quartz glass, plastic, polyimide, or the like) having both flat surfaces. A 100-nm-thick SiO ₂ laminated film or the like and an amorphous semiconductor film 82 (for example, Si, Ge, SiGe or the like having a thickness of about 50 to 200 nm) are sequentially formed by a chemical vapor deposition method, a sputtering method, or the like. The substrate 3 to be processed is formed by forming a film. Then, by using the crystallization apparatus of each embodiment, a laser beam 83 (for example, KrF excimer) is applied to part or all of the surface of the amorphous semiconductor film 82 (corresponding to the surface 3a of the substrate 3 to be processed). Laser light or XeCl excimer laser light) as shown by arrows.

As a result, as shown in FIG. 21B, the amorphous semiconductor film 82 becomes a polycrystalline semiconductor film or a single-crystallized semiconductor film 84 having a crystal with a large grain size. Next, as shown in FIG. 21C, the polycrystalline semiconductor film or the single-crystallized semiconductor film is processed into an island-shaped semiconductor film 85 by using a photolithography technique. A SiO ₂ film having a thickness of 20 nm to 100 nm is formed as the film 86 by a chemical vapor deposition method, a sputtering method, or the like. Further, as shown in FIG. 21D, a gate electrode 87 (for example, silicide or MoW) is formed on a portion of the gate insulating film 86 facing the semiconductor film 85, and impurities are formed using the gate electrode 87 as a mask. Ions 88 (phosphorus for an N-channel transistor, boron for a P-channel transistor) are implanted into the semiconductor layer 85 via the gate insulating film 86 as shown by arrows. Thereafter, an annealing process (for example, at 450 ° C. for one hour) is performed in a nitrogen atmosphere to activate impurities in the semiconductor layer 85, and the source region 91 and the drain region are sandwiched between the channel region 90 located below the gate electrode 87. A region 92 is formed.

  Next, as shown in FIG. 21E, an interlayer insulating film 89 is formed on the gate insulating film 86 and the gate electrode 87, contact holes are made in these films 86 and 89, and the source region 91 and the drain region 92 are formed. A source electrode 93 and a drain electrode 94 to be connected are formed. At this time, in the steps shown in FIGS. 21A and 21B, a large-grain crystal of a polycrystalline semiconductor film or a single-crystallized semiconductor film 84 formed by emitting a laser beam through the mask described in each modification example. A channel region 90 is formed in accordance with the position. Through the above steps, a polycrystalline transistor or a single-crystal semiconductor transistor can be formed. The polycrystalline transistor or the single-crystallized transistor thus manufactured can be applied to a driving circuit such as a liquid crystal display or an EL (electroluminescence) display, or an integrated circuit such as a memory (SRAM or DRAM) or a CPU.

  In each of the above-described embodiments, the present invention is applied to the crystallization apparatus and method, but is not limited thereto. In general, a mask for forming a predetermined light intensity distribution on a predetermined surface, and The present invention can also be applied to an exposure method for forming a predetermined light intensity distribution on a substrate provided on a predetermined surface using this mask.

It is a figure showing roughly composition of a crystallization device concerning a 1st embodiment of the present invention. It is a figure which shows roughly the structure and operation | movement of the basic unit part of the mask in 1st Embodiment. FIG. 9 is a diagram schematically illustrating a configuration of a basic unit portion of a mask according to a first modification and a light intensity distribution of light emitted from the mask. FIG. 4 is a diagram for explaining an operation of a light scattering layer of the mask shown in FIG. 3. It is a figure for fundamentally explaining scattering of light. 6A to 6E are diagrams illustrating an example of a method for manufacturing a mask according to the first modification and an example of use. It is a figure which shows roughly the structure of the basic unit part of the mask concerning a 2nd modification, and the light intensity distribution of the emitted light from this mask. 8A to 8E are views for explaining a manufacturing example and a usage example of the mask according to the second modification. FIG. 14 is a diagram illustrating a configuration of a basic unit portion of a mask and a light intensity distribution of light emitted from the mask according to a third modification. FIG. 15 is a diagram illustrating a simulation result regarding a light intensity distribution obtained when a refraction surface of a mask according to a third modification is formed in a stepped shape. It is a figure showing roughly composition of a basic unit part of a mask concerning a 4th modification, and light intensity distribution of light emitted from this mask. It is a figure for explaining a fundamental diffraction operation of a mask concerning a 4th modification. It is a figure for explaining an example of a manufacturing method of a mask concerning a 4th modification, and an example of use. It is a figure which shows roughly the structure of the crystallization apparatus concerning 2nd Embodiment of this invention. It is a figure showing roughly composition of a crystallization device concerning a 3rd embodiment of the present invention. It is a figure showing roughly composition of a crystallization device concerning a 4th embodiment of the present invention. FIG. 17A is a diagram schematically showing a main part configuration and operation of a crystallization apparatus according to a fifth embodiment of the present invention, and FIG. 17B is a diagram showing a modification of the mask shown in FIG. 17A. FIGS. 18A to 18C are diagrams for explaining an example of a method of manufacturing a mask integrally constituted by a light reflection layer and a light absorption layer, and a usage example. 19A to 19D are diagrams schematically showing a mask of a crystallization apparatus according to a sixth embodiment of the present invention and a light intensity distribution of light emitted from the mask, and FIG. 19E is a plan view showing a modification of the mask. FIG. FIG. 4 is a diagram for explaining an example of a method for manufacturing a mask having a binary distribution characteristic and an embodiment of use. 21A to 21E are diagrams illustrating steps of an example of a method of manufacturing an electronic device using the crystallization apparatus of each embodiment. FIG. 7 is a diagram showing a light intensity distribution obtained on a substrate to be processed when a conventional line-type phase shift mask is used.

Explanation of reference numerals

1, 11, 21, 31, 41 Mask 2 Illumination system 2a KrF excimer laser light source 2b Beam expander 2c, 2e Fly-eye lens 2d, 2f Condenser optical system 3 Substrate to be processed 4 Substrate stage 5, 6 Imaging optical system

Claims (44)

A mask (1) and an illumination system (2) for illuminating the mask are provided, and incident light from the illumination system passes through the mask to become light having a light intensity distribution of a reverse peak pattern. A crystallization apparatus for irradiating a crystalline semiconductor film or an amorphous semiconductor film to generate a crystallized semiconductor film,
A crystallization apparatus, wherein the mask (1) includes a light absorption layer (1c) having light absorption characteristics according to the light intensity distribution of the reverse peak pattern. A mask (11) and an illumination system (2) for illuminating the mask are provided, and incident light from the illumination system passes through the mask to become light having a light intensity distribution of a reverse peak pattern. A crystallization apparatus for irradiating a crystalline semiconductor film or an amorphous semiconductor film to generate a crystallized semiconductor film,
A crystallization apparatus, wherein the mask (11) includes a light scattering layer (11c) having light scattering characteristics according to the light intensity distribution of the reverse peak pattern. The crystallization apparatus according to claim 2, wherein the light scattering layer (11c) has a refractive index distribution according to a light intensity distribution of the reverse peak pattern. The crystallization apparatus according to claim 3, wherein the light scattering layer (11c) is formed by forming a layer made of a transparent material in which a volatile component is dispersed, and then volatilizing the volatile component. The crystallization apparatus according to claim 2, wherein the light scattering layer (11c) has a surface shape according to a light intensity distribution of the reverse peak pattern. A mask (21); and an illumination system (2) for illuminating the mask, and the incident light from the illumination system passes through the mask to become light having a light intensity distribution of an inverse peak pattern, and becomes polycrystalline. A crystallization apparatus that irradiates a semiconductor film or an amorphous semiconductor film to generate a crystallized semiconductor film,
A crystallization apparatus, wherein the mask (21) includes a light reflection layer (21c) having light reflection characteristics according to the light intensity distribution of the reverse peak pattern. The crystallization apparatus according to claim 6, wherein the light reflection layer (21c) has a multilayer reflection film formed according to a predetermined layer number distribution. The crystallization apparatus according to claim 6, wherein the light reflection layer (21c) has a metal reflection film formed according to a predetermined thickness distribution. A mask (31) and an illumination system (2) for illuminating the mask are provided, and incident light from the illumination system passes through the mask to become light having a light intensity distribution of a reverse peak pattern. A crystallization apparatus for irradiating a crystalline semiconductor film or an amorphous semiconductor film to generate a crystallized semiconductor film,
A crystallization apparatus, wherein the mask (31) includes a photorefractive layer (31c) having photorefractive characteristics according to the light intensity distribution of the reverse peak pattern. The crystallization apparatus according to claim 9, wherein the light refraction layer (31c) has a refractive index distribution according to a light intensity distribution of the reverse peak pattern. The crystallization apparatus according to claim 9, wherein the light refraction layer (31c) has a surface shape according to a light intensity distribution of the reverse peak pattern. A mask (41) and an illumination system (2) for illuminating the mask are provided, and incident light from the illumination system passes through the mask to become light having a light intensity distribution of a reverse peak pattern. A crystallization apparatus for irradiating a crystalline semiconductor film or an amorphous semiconductor film to generate a crystallized semiconductor film,
A crystallization apparatus, wherein the mask (41) includes a light diffraction layer (41c) having a light diffraction characteristic according to a light intensity distribution of the reverse peak pattern. The crystallization apparatus according to claim 12, wherein the light diffraction layer (41c) has a refractive index distribution according to a light intensity distribution of the reverse peak pattern. The crystallization apparatus according to claim 12, wherein the light diffraction layer (41c) has a surface shape according to a light intensity distribution of the reverse peak pattern. A mask (1,11,21,31,41) and an illumination system (2) for illuminating the mask, the incident light from the illumination system passes through the mask so that the light intensity of the inverse peak pattern A crystallization apparatus that generates a crystallized semiconductor film by irradiating a polycrystalline semiconductor film or an amorphous semiconductor film as light having a distribution,
The masks (1, 11, 21, 31, 41) each have a light absorption layer (1c) having a light absorption characteristic according to the light intensity distribution of the reverse peak pattern, and a light intensity distribution of the reverse peak pattern. A light scattering layer (11c) having a corresponding light scattering characteristic, a light reflecting layer (21c) having a light reflection characteristic according to the light intensity distribution of the reverse peak pattern, and a light refraction according to the light intensity distribution of the reverse peak pattern. A crystal comprising: a light refraction layer (31c) having characteristics; and a first layer and a second layer selected from a light diffraction layer (41c) having light diffraction characteristics according to the light intensity distribution of the reverse peak pattern. Device. A mask (100); and an illumination system (2) for illuminating the mask. Incident light from the illumination system passes through the mask to become light having a light intensity distribution of an inverse peak pattern. A crystallization apparatus for irradiating a crystalline semiconductor film or an amorphous semiconductor film to generate a crystallized semiconductor film,
The mask (100) includes a light absorption layer having a light absorption characteristic according to the light intensity distribution of the reverse peak pattern, a light scattering layer having a light scattering characteristic according to the light intensity distribution of the reverse peak pattern, A light reflection layer having a light reflection characteristic according to the light intensity distribution of the pattern, a light refraction layer having a light refraction characteristic according to the light intensity distribution of the reverse peak pattern, and light corresponding to the light intensity distribution of the reverse peak pattern A crystallization apparatus comprising: a first layer (100c) selected from a light diffraction layer having diffraction characteristics; and a phase shift layer (100a). The crystallization apparatus according to claim 1, wherein the polycrystalline semiconductor film or the amorphous semiconductor film and the mask are arranged in close contact with each other. The crystallization apparatus according to any one of claims 1 to 16, wherein the polycrystalline semiconductor film or the amorphous semiconductor film and the mask are arranged substantially in parallel and close to each other. An imaging optical system (5) disposed in an optical path between the polycrystalline semiconductor film or the amorphous semiconductor film and the mask;
17. The polycrystalline semiconductor film or the amorphous semiconductor film is set at a predetermined distance from a plane optically conjugate with the mask along an optical axis of the imaging optical system. The crystallization apparatus according to claim 1. An imaging optical system (6) arranged in an optical path between the polycrystalline semiconductor film or the amorphous semiconductor film and the mask;
The polycrystalline semiconductor film or the amorphous semiconductor film is set on a plane optically substantially conjugate with the mask,
17. The crystallization apparatus according to claim 1, wherein an image-side numerical aperture of the imaging optical system is set to a required value for generating a light intensity distribution of the reverse peak pattern. A mask (61); and an illumination system (2) for illuminating the mask. Incident light from the illumination system is converted into light having a light intensity distribution of a reverse peak pattern by passing through the mask. A crystallization apparatus for irradiating a crystalline semiconductor film or an amorphous semiconductor film to generate a crystallized semiconductor film,
The mask (61) has a binary distribution characteristic corresponding to the light intensity distribution of the reverse peak pattern, and is configured to obtain a relatively continuous light intensity distribution by removing high frequency components of a spatial frequency. Crystallization equipment. 22. The crystallization apparatus according to claim 21, wherein the polycrystalline semiconductor film or the amorphous semiconductor film and the mask are arranged substantially parallel to and close to each other to remove the high-frequency component. An imaging optical system (5) disposed in an optical path between the polycrystalline semiconductor film or the amorphous semiconductor film and the mask;
In order to remove the high-frequency component, the polycrystalline semiconductor film or the amorphous semiconductor film is separated from the plane optically conjugate with the mask by a predetermined distance along the optical axis of the imaging optical system (5). 22. The crystallization apparatus according to claim 21, which is set apart. The crystallization apparatus according to claim 22 or 23, wherein the illumination system (2) illuminates the mask with a light beam having a predetermined maximum incident angle. An imaging optical system (6) arranged in an optical path between the polycrystalline semiconductor film or the amorphous semiconductor film and the mask;
The polycrystalline semiconductor film or the amorphous semiconductor film is set on a plane optically substantially conjugate with the mask,
The crystallization apparatus according to claim 21, wherein the imaging optical system (6) is set to a required image-side numerical aperture for removing the high-frequency component. An imaging optical system (5, 6) arranged in an optical path between the polycrystalline semiconductor film or the amorphous semiconductor film and the mask;
The crystallization apparatus according to claim 21, wherein the imaging optical system (5, 6) has a necessary aberration to remove the high-frequency component. A crystallization method for illuminating a mask (1) and irradiating light having a light intensity distribution of a reverse peak pattern to a polycrystalline semiconductor film or an amorphous semiconductor film through the mask to form a crystallized semiconductor film. hand,
A crystallization method using a mask having a light absorption layer (1c) having light absorption characteristics according to the light intensity distribution of the reverse peak pattern. A crystallization method for illuminating a mask (11) and irradiating light having a light intensity distribution of a reverse peak pattern to the polycrystalline semiconductor film or the amorphous semiconductor film through the mask to form a crystallized semiconductor film. hand,
A crystallization method using a mask having a light scattering layer (11c) having light scattering characteristics according to the light intensity distribution of the reverse peak pattern. A crystallization method for illuminating a mask (21) and irradiating light having a light intensity distribution of a reverse peak pattern to the polycrystalline semiconductor film or the amorphous semiconductor film through the mask to form a crystallized semiconductor film. hand,
A crystallization method using a mask having a light reflection layer (21c) having light reflection characteristics according to the light intensity distribution of the reverse peak pattern. A crystallization method for illuminating a mask (31) and irradiating light having a light intensity distribution of a reverse peak pattern to the polycrystalline semiconductor film or the amorphous semiconductor film through the mask to form a crystallized semiconductor film. hand,
A crystallization method using a mask having a photorefractive layer (31c) having a photorefractive characteristic according to the light intensity distribution of the reverse peak pattern. A crystallization method for illuminating a mask (41) and irradiating light having a light intensity distribution of a reverse peak pattern to the polycrystalline semiconductor film or the amorphous semiconductor film through the mask to form a crystallized semiconductor film. hand,
A crystallization method using a mask having a light diffraction layer (41c) having light diffraction characteristics according to the light intensity distribution of the reverse peak pattern. A mask (1, 11, 21, 31, 41) is illuminated, and light having a reverse peak pattern light intensity distribution is applied to the polycrystalline semiconductor film or the amorphous semiconductor film through the mask to form a crystallized semiconductor film. A crystallization method for producing
A light absorption layer (1c) having light absorption characteristics according to the light intensity distribution of the reverse peak pattern, a light scattering layer (11c) having light scattering characteristics according to the light intensity distribution of the reverse peak pattern, A light reflection layer (21c) having a light reflection characteristic according to the light intensity distribution of the above, a light refraction layer (31c) having a light refraction characteristic according to the light intensity distribution of the reverse peak pattern, and the light intensity of the reverse peak pattern A crystallization method using a mask including a first layer and a second layer each formed by a layer selected from a light diffraction layer (41c) having light diffraction characteristics according to distribution. A crystallization method for illuminating a mask and irradiating light having a light intensity distribution of a reverse peak pattern to the polycrystalline semiconductor film or the amorphous semiconductor film through the mask to generate a crystallized semiconductor film,
A light absorption layer having a light absorption characteristic according to the light intensity distribution of the inverse peak pattern, a light scattering layer having a light scattering characteristic according to the light intensity distribution of the inverse peak pattern, and a light intensity distribution of the inverse peak pattern; A light reflection layer having a light reflection characteristic, a light refraction layer having a light refraction characteristic according to the light intensity distribution of the reverse peak pattern, and a light diffraction layer having a light diffraction characteristic according to the light intensity distribution of the reverse peak pattern A crystallization method using a mask including a first layer (100c) selected from the group consisting of: and a phase shift layer (100d). A crystallization method for illuminating a mask and irradiating light having a light intensity distribution of a reverse peak pattern to the polycrystalline semiconductor film or the amorphous semiconductor film through the mask to generate a crystallized semiconductor film,
A crystallization method for obtaining a relatively continuous light intensity distribution by removing a high frequency component of a spatial frequency using a mask having a binary distribution characteristic corresponding to the light intensity distribution of the reverse peak pattern. A mask (1) for forming a predetermined light intensity distribution on a predetermined surface (3a),
The mask includes a light absorption layer (1c) having light absorption characteristics according to the predetermined light intensity distribution. A mask (11) for forming a predetermined light intensity distribution on a predetermined surface (3a),
The mask includes a light scattering layer (11c) having light scattering characteristics according to the predetermined light intensity distribution. A mask (21) for forming a predetermined light intensity distribution on a predetermined surface (3a),
The mask includes a light reflection layer (21c) having light reflection characteristics according to the predetermined light intensity distribution. A mask (31) for forming a predetermined light intensity distribution on a predetermined surface (3a),
The mask includes a light refraction layer having a light refraction characteristic (31c) according to the predetermined light intensity distribution. A mask (41) for forming a predetermined light intensity distribution on a predetermined surface (3a),
The mask includes a light diffraction layer (41c) having a light diffraction characteristic according to the predetermined light intensity distribution. An illumination system for illuminating the mask according to any one of claims 35 to 39,
An exposure method for forming the predetermined light intensity distribution on a substrate (3) on which an object to be processed is provided on the predetermined surface (3a). The exposure method according to claim 40, wherein the substrate and the mask are arranged in close contact with each other. 41. The exposure method according to claim 40, wherein the substrate and the mask are arranged substantially in parallel and close to each other. An imaging optical system (5) is arranged in an optical path between the substrate and the mask;
41. The exposure method according to claim 40, wherein the substrate is set at a predetermined distance from a plane optically conjugate with the mask along an optical axis of the imaging optical system. An imaging optical system (6) is arranged in an optical path between the substrate and the mask;
The image-side numerical aperture of the imaging optical system is set to a required value for generating the predetermined light intensity distribution,
41. The exposure method according to claim 40, wherein the substrate is set on a surface that is substantially optically conjugate with the mask.

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