JP2004171730A5 - - Google Patents
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- JP2004171730A5 JP2004171730A5 JP2003276468A JP2003276468A JP2004171730A5 JP 2004171730 A5 JP2004171730 A5 JP 2004171730A5 JP 2003276468 A JP2003276468 A JP 2003276468A JP 2003276468 A JP2003276468 A JP 2003276468A JP 2004171730 A5 JP2004171730 A5 JP 2004171730A5
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003276468A JP4346373B2 (en) | 2002-10-31 | 2003-07-18 | Semiconductor device |
| US10/694,780 US6940777B2 (en) | 2002-10-31 | 2003-10-29 | Semiconductor device and semiconductor memory device provided with internal current setting adjustment circuit |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002318078 | 2002-10-31 | ||
| JP2003276468A JP4346373B2 (en) | 2002-10-31 | 2003-07-18 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004171730A JP2004171730A (en) | 2004-06-17 |
| JP2004171730A5 true JP2004171730A5 (en) | 2006-07-27 |
| JP4346373B2 JP4346373B2 (en) | 2009-10-21 |
Family
ID=32715857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003276468A Expired - Fee Related JP4346373B2 (en) | 2002-10-31 | 2003-07-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4346373B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100558548B1 (en) * | 2003-11-27 | 2006-03-10 | 삼성전자주식회사 | Write driver circuit in phase change memory device and method for driving write current |
| WO2006073176A1 (en) | 2005-01-06 | 2006-07-13 | Nec Corporation | Semiconductor integrated circuit device |
| JP4328791B2 (en) | 2006-09-20 | 2009-09-09 | エルピーダメモリ株式会社 | Method for measuring characteristic of device under test and characteristic management system for semiconductor device |
| JP4901899B2 (en) | 2009-03-30 | 2012-03-21 | 株式会社東芝 | Magnetoresistive effect memory |
| US7978498B2 (en) * | 2009-04-03 | 2011-07-12 | Sandisk 3D, Llc | Programming non-volatile storage element using current from other element |
| US8139391B2 (en) * | 2009-04-03 | 2012-03-20 | Sandisk 3D Llc | Multi-bit resistance-switching memory cell |
| KR101047052B1 (en) * | 2009-05-28 | 2011-07-06 | 주식회사 하이닉스반도체 | Phase change memory device and test circuit for same |
| US8476917B2 (en) * | 2010-01-29 | 2013-07-02 | Freescale Semiconductor, Inc. | Quiescent current (IDDQ) indication and testing apparatus and methods |
| KR20130050776A (en) * | 2011-11-08 | 2013-05-16 | 에스케이하이닉스 주식회사 | Semiconductor device and semiconductor system having the semiconductor device and method operation for the same |
| JP5306487B2 (en) * | 2012-01-05 | 2013-10-02 | 株式会社東芝 | Magnetoresistive effect memory |
| KR102386205B1 (en) * | 2015-08-05 | 2022-04-13 | 삼성디스플레이 주식회사 | Apparatus for array test and method for the array test |
| US10347317B2 (en) | 2017-10-05 | 2019-07-09 | Gyrfalcon Technology Inc. | Method of self-testing and reusing of reference cells in a memory architecture |
| WO2023233472A1 (en) * | 2022-05-30 | 2023-12-07 | 日清紡マイクロデバイス株式会社 | Electronic circuit and method for testing same |
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2003
- 2003-07-18 JP JP2003276468A patent/JP4346373B2/en not_active Expired - Fee Related