JP2004145065A - Blank for halftone version phase shift mask, its phase shift mask and method for manufacturing semiconductor device using the mask - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a blank for a phase shift halftone mask for preventing decrease of accuracy in the measurement of the length or correction due to the decrease of the contrast of a secondary electron image which induces problems during the measuring the mask dimension by CD-SEM (critical dimension scanning electron microscope: length measuring SEM) and correcting a mask by a FIB (focused ion beam) in the process of manufacturing a photomask using a blank for a phase shift halftone mask. <P>SOLUTION: The blank for a halftone phase shift mask is produced by forming a single-layer or multilayer thin film layer which is semitransparent and has a controlled phase and transmittance for an exposure light source on a transparent glass base. The sheet resistance of the above blank measured on the surface of the thin film layer formed to control the retardation or transmittance ranges from 1×10<SP>8</SP>to 1×10<SP>14</SP>Ω/square. <P>COPYRIGHT: (C)2004,JPO

Description

【００３４】
上記に示す条件１〜９のハーフトーン型位相シフトマスク用ブランクの片側の半透明膜層上に金属層の酸化クロム及びクロム層形成した後、スピンコート法により電子線レジスト層を形成し、ハーフトーン型位相シフトマスク用ブランクを作成した。
【００３５】
更に、前記ハーフトーン型位相シフトマスク用ブランクに電子線描画機により電子線レジスト上にパターニングを行った。続いて金属層のクロム層のエッチング処理し、半透明膜層のエッチング処理後、電子線レジスト及び金属層のクロム層は剥離処理を行い除去し、ハーフトーン型位相シフトマスク、条件１〜９を作成した。
【００３６】
ＣＤ−ＳＥＭ（加速電圧２５ｋＶ）により前記ハーフトーン型位相シフトマスクのジルコニウムシリコンナイトライドで形成したパターンを観察し、半透明膜層と石英ガラスの基材よりの二次電子像のコントラストが取れるかどうか確認した。その結果を表２（条件１〜条件９）に示す。表２は、実施例１におけるハーフトーン型位相シフトマスクのＣＤ−ＳＥＭにおけるコントラストの有無を示す。
【００３７】
【表２】

【００３８】
尚、位相差の測定にはレーザーテック社製ＭＰＭ−１９３を使用した。
【００３９】
〈実施例２〉
ＤＣスパッタリング装置を用いて、チャンバ内にアルゴン（Ａｒ）ガス及び酸素（Ｏ２）ガスを条件によってガス比を設定して導入し、ジルコニウムシリサイドターゲットを用いた反応性スパッタリングによりまず石英ガラス基材上にジルコニウムシリケート（ＺｒＳｉＯ）を２００Å積層した。この層をＡ層とする。
【００４０】
続いて、Ａ層の上にＡ層よりも透明性の高いジルコニウムシリケート層をＡｒとＯ２ガスの反応性スパッタにより８００Å積層し、この層をＢ層とする。すなわち、基材上にＡ層、Ｂ層の半透明膜層を形成した。Ａ層とＢ層のガス条件を表３の条件項目に示す。また、表３（条件１０〜条件１３）は、実施例２におけるジルコニウムシリケート形成条件及びシート抵抗値を示す。
【００４１】
【表３】

【００４２】
前記の半透明膜層をＪＩＳ−Ｋ６９１１−１９９５に準拠した絶縁抵抗率計でシート抵抗を計測した。そのシート抵抗値の結果を上記の表３の結果項に示す。
【００４３】
更に、前記半透明膜層の１９３ｎｍ及び１５７ｎｍの光線での透過率をＪ．Ａ．Ｗｏｏｌｌａｍ製ＶＵＶ−Ｂａｓｅで測定を行った。その結果を図４（条件１０〜条件１３）に示す。表４は、実施例２におけるジルコニウムシリケートの透過率を示す。
【００４４】
【表４】

【００４５】
次に、前記基材上の半透明膜層表面に金属層の酸化クロム及びクロム層を形成した後、その全面に電子線レジスト層を形成し、ハーフトーン型位相シフトマスク用ブランクを作成した。
【００４６】
更に、前記ハーフトーン型位相シフトマスク用ブランクに電子線描画機により電子線レジスト上にパターニングを行った。続いて金属層のエッチング、位相シフターとなる半透明膜層層をエッチングし、パターン形成後、電子線レジストと金属層を剥離処理しハーフトーン型位相シフトマスク（条件１０〜１３）を作成した。
【００４７】
ＣＤ−ＳＥＭ（加速電圧２５ｋＶ）によりジルコニウムシリコンナイトライドで形成した前記ハーフトーン型位相シフトマスクのパターンを観察し、半透明膜層層の表面と石英ガラス基材の表面とを二次電子像のコントラストが取れるかどうか確認した。その結果を表５に示す。表５は、実施例２におけるハーフトーン型位相シフトマスクのＣＤ−ＳＥＭにおけるコントラストの有無を示す。
【００４８】
【表５】

【００４９】
【発明の効果】
以上説明したように、本発明のハーフトーン型位相シフトマスク用ブランク若しくはマスクとそれらの製造方法によれば、本来のハーフトーン型位相シフトマスクの役割である位相差及び透過率を変調し、パターン解像力の向上という特徴と併せ、シート抵抗を最適化することにより、フォトマスク作製時に二次電子の利用が可能である為、本発明のブランクで作製したフォトマスクはＣＤ−ＳＥＭによる測長が可能であり、本発明のブランクで作製したフォトマスクはＦＩＢによる修正時の視認性確保が可能となる効果がある。
【図面の簡単な説明】
【図１】本発明のハーフトーン型位相シフトマスク用ブランク及びそれを用いた位相シフトマスクの一実施例の側断面図で、（ａ）は、位相シフトマスク用ブランクであり、（ｂ）は、位相シフトマスク。
【符号の説明】
１…（透明ガラスの）基材
２…半透明性の薄膜（半透明膜層）
３…（マスクの）パターン
１０…ハーフトーン型位相シフトマスク用ブランク
２０…ハーフトーン型位相シフトマスク[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a photomask blank for forming a pattern of reduced projection exposure in a photolithography step in a semiconductor device manufacturing process, and relates to a halftone type phase shift mask blank and its phase shift mask and its mask. The present invention relates to a method for manufacturing a semiconductor device used.
[0002]
[Prior art]
With the rapid miniaturization of semiconductor devices in recent years, photolithographic technology for transferring a mask pattern onto a semiconductor substrate (hereinafter, referred to as a wafer) has also made progress. In order to improve the resolution, the reduction projection exposure apparatus (stepper) uses a deep ultraviolet region such as a KrF excimer laser (wavelength λ = 248 nm) and an ArF excimer laser (wavelength λ = 193 nm) after i-line (wavelength λ = 365 nm). Further, the wavelength has been steadily shortened to a vacuum ultraviolet region of an F2 laser (wavelength λ = 157 nm).
[0003]
The phase shift method is one of the resolution improving techniques in the photolithographic technique during the manufacturing process of a semiconductor device, and is a technique often used when forming a fine pattern having a wavelength equal to or less than the wavelength of an exposure light source on a wafer. In principle, by providing a phase shift section in adjacent regions on the mask so that the phase difference between the transmitted lights becomes 180 degrees, the light intensity at the boundary portion when both transmitted lights are diffracted and interfere with each other. , Thereby improving the resolution of the transfer pattern. As a result, the resolution of fine patterns and the depth of focus can be significantly improved as compared with ordinary photomasks.
[0004]
The above-described phase shift method is proposed by IBM's Levenson et al. And described in Patent Document 1 and the like, and a Levenson type, a halftone type, and the like classified according to the structure of the phase shift unit are known. In particular, the halftone phase shift mask has a function of inverting the phase of transmitted light in the semi-transparent film and having a light-shielding role within the semi-transparent film forming the pattern to reduce the sensitivity of the resist to less than the edge of the transmitted light intensity. It has a steep shape to improve resolution and depth of focus characteristics and has the effect of faithfully transferring a mask pattern onto a wafer, and is particularly effective in improving the resolution of an isolated pattern.
[0005]
[Patent Document 1]
JP-A-58-173744 [0006]
The halftone type phase shift mask has a single-layer structure in which a single-layer or multi-layer thin-film layer (hereinafter, referred to as a semi-transparent film layer) that provides a phase difference and transmittance is formed of one type of thin-film layer. Type halftone phase shift masks and multilayer halftone type phase shift masks composed of two or more types of thin film layers. The simplest structure of the translucent film layer of the multi-layer halftone type phase shift mask is that the thin film layer for adjusting the phase shift and the thin film layer for adjusting the transmittance are formed as separate thin film layers and laminated sequentially. This is a two-layer halftone phase shift mask to be controlled.
[0007]
In a halftone type phase shift mask (hereinafter, including a mask blank), the translucent film layer generally has a transmittance of 5 to 15% for ultraviolet light which is an exposure wavelength, and also has a reflectance of 0 to 25%. Spectral optical conditions (spectral characteristics) that the transmittance in the inspection wavelength range of the mask pattern inspection apparatus is 5 to 40% must be satisfied.
[0008]
The reason for this is that if the reflectance at the exposure wavelength is high, when pattern transfer is performed on the wafer by reduced projection exposure, the transfer accuracy of the pattern decreases due to multiple reflections in the gap between the halftone phase shift mask and the wafer. I will. In addition, in the inspection of the halftone phase shift mask and the measurement of the pattern dimension, visible light of 365 nm (i-line) or ultraviolet light of 257 nm is mainly used. This is because the contrast between the transmissive part (glass base material) of the glass base material and the translucent film layer part is reduced, which causes a problem that it becomes difficult to inspect a pattern image and measure a pattern dimension.
[0009]
As a measure for achieving the above requirements, that is, transmittance in the ultraviolet region of short wavelength, and flat spectral characteristics up to the visible light region, as a translucent film material for a halftone type phase shift mask Metallicides such as MoSi (molybdenum silicide) and metal fluorides such as CrF (chromium fluoride) have been proposed, and have been used in i-line exposure and KrF exposure.
[0010]
In addition to the halftone phase shift mask, as a method of forming a thin film layer of a photomask blank, a sputtering method that is excellent in adhesion of a transparent glass to a substrate is generally used.
[0011]
However, in recent years, the translucent film material having a practical transmittance (5 to 15%) in a deep ultraviolet region such as an ArF excimer laser, and further in a vacuum ultraviolet region of an F2 laser has been formed by sputtering. When a film is formed, the sheet resistance value (surface resistance value) of the translucent film is greatly increased as compared with a conventionally used material.
[0012]
However, this increase in the sheet resistance of the translucent film does not pose a problem in the patterning of the translucent film material. This is because, by arranging a metal layer such as chromium or chromium oxide on the layer that is in contact with the electron beam resist at the time of electron beam writing, that is, on the surface of the translucent film layer, measures are taken to prevent abnormal pattern formation due to charging. ing. After the formation of the main pattern is completed, the metal layer is removed by a photolithography process to complete a halftone phase shift mask.
[0013]
On the other hand, as the miniaturization progresses, there arises a problem that a translucent film layer having a high sheet resistance value becomes a problem in photomask production. The problematic steps are a step of measuring a mask dimension by a CD-SEM (length measuring SEM) and a step of correcting a defect in a mask pattern by an FIB correcting apparatus (a focused ion beam).
[0014]
The length measurement of the mask dimension by the CD-SEM is a technique that is often used in recent years because it is possible to measure a finer pattern dimension than a conventional length measuring apparatus using visible light. The CD-SEM irradiates the surface of the semi-transparent film layer in the pattern portion and the surface of the transparent glass substrate in the non-pattern portion with an electron beam, and recognizes the pattern image based on the contrast of the secondary electron image generated from the electron beam. Then, the shape of the pattern is checked and the length of the pattern is measured.
[0015]
Here, when the sheet resistance of the surface of the translucent film layer forming the pattern portion is high, the secondary electron image is blurred due to the charging of the pattern portion by the irradiating electron beam, and the secondary electron emission efficiency is reduced, and the non-pattern portion is reduced. Since the difference in contrast with the transparent glass base material cannot be obtained, accurate length measurement cannot be performed.
[0016]
A similar phenomenon can also occur when correcting the mask defect by the FIB correcting device because the visibility of the pattern is obtained by the secondary electron image by the focused ion beam applied. For this reason, the accuracy of correcting the fine pattern is seriously affected.
[0017]
[Problems to be solved by the invention]
An object of the present invention is to provide a blank for a halftone phase shift mask, which has a practically sufficient transmittance to an exposure light source at the time of reduction projection, while at the same time measuring and correcting a pattern by an electron beam or an ion beam. It is an object of the present invention to provide a blank for a halftone type phase shift mask capable of correcting a defect of a mask pattern and measuring a pattern dimension while ensuring visibility, a phase shift mask thereof, and a method of manufacturing a semiconductor device using the mask. It is what it was.
[0018]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the invention according to claim 1 of the present invention provides a single-layer or multi-layer semi-transparent film having a phase and transmittance controlled with respect to an exposure light source on a transparent glass substrate 1. In the blank 10 for a halftone type phase shift mask on which a thin film layer (semi-transparent film layer 2) is formed, the sheet resistance measured on the surface of the thin film layer 2 formed for the purpose of controlling the phase difference or transmittance is: This is a blank for a halftone phase shift mask, which has a density of 1 × 10 ⁸ Ω / □ to 1 × 10 ¹⁴ Ω / □ (□ is a 1 cm square).
[0019]
The invention according to claim 2 of the present invention provides a method for forming a pattern in the thin film layer 2 on the blank for a halftone type phase shift mask 10 by photolithography during the manufacturing process of the halftone type phase shift mask. 3 is a halftone type phase shift mask,
[0020]
The invention according to claim 3 of the present invention is characterized in that the halftone phase shift mask 20 is mounted on a reduction projection exposure apparatus that irradiates an ArF excimer laser or an F2 excimer laser by a photolithographic technique during a semiconductor device manufacturing process, 3. A method of manufacturing a semiconductor device using a halftone type phase shift mask according to claim 2, wherein a pattern portion to be reduced and projected is provided on a substrate for the semiconductor device.
[0021]
[Action]
With the rapid miniaturization of semiconductor devices, irradiation light of a reduction projection exposure apparatus (stepper) used for photolithography technology for manufacturing semiconductor devices is irradiated with an ArF excimer laser (wavelength λ = 193 nm) and an F2 laser (wavelength λ = 157 nm). The wavelength is being shortened. In the blank for a halftone type phase shift mask of the present invention, the thin film layer formed for the purpose of controlling the phase difference or transmittance has a practically sufficient phase difference or transmittance for irradiation light whose wavelength is shortened, In addition, by controlling the sheet resistance value on the surface of the thin film layer to 1 × 10 ⁸ Ω / □ to 1 × 10 ¹⁴ Ω / □, the length of the pattern by the irradiation of the electron beam or the ion beam and the visual recognition at the time of defect correction. Therefore, measurement of the mask pattern dimension and defect correction of the mask pattern can be accurately and accurately performed.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1A is a side sectional view of one embodiment of a blank for a halftone type phase shift mask according to the present invention. The blank for a halftone type phase shift mask 10 has a translucent film layer 2 for adjusting the transmittance and modulating the phase on a transparent glass substrate 1. The translucent film layer 2 having the above characteristics is not limited in the number of layers, and has a region on the surface where the number of oxygen atoms is as large as about several tens of millimeters, which is formed when the blank is manufactured by heat treatment for natural or structural stabilization. That is, an oxide layer may be included.
[0023]
On the other hand, the translucent film layer 2 needs to have a phase shift effect at the pattern edge when a pattern is formed on the wafer, and the pattern must have a transmittance that does not transmit light too much. . Practically, the transmittance is 5 to 15%, and the phase difference between the non-pattern portion where the material of the translucent film layer does not exist on the pattern of the photomask and the pattern portion where the material of the translucent film layer exists does not exist. The difference is ideally a shift amount of 180 degrees, but in practice, it may be 180 ± 5 degrees.
[0024]
The material of the translucent film layer 2 includes a metal silicide-based material. That is, metal silicate, which is an oxide derived from metal silicide, metal silicon nitride, which is a nitride, and metal silicon oxynitride, which is an intermediate between them. These metal compounds may be single or a mixture.
[0025]
In order to form the material of the translucent film layer 2 on the substrate 1, the translucent film layer 2 is formed on one side of the substrate 1 by a sputtering method using a target made of metal silicide or a metal and silicon. At this time, the gas used is a mixed gas of a rare gas and a reactive gas, but the rare gas is argon, helium, neon, krypton, xenon, and the reactive gas is oxygen, nitrogen, nitrogen oxide, There are nitrous oxide and nitrogen dioxide.
[0026]
The substrate 1 is not particularly limited, but a material having a transmittance as high as possible to an exposure light source, for example, a material such as quartz glass or calcium fluoride (fluorite) is particularly preferable.
[0027]
Further, in order to prevent charging when forming a photomask pattern on a blank for a halftone phase shift mask in the present invention, a metal layer containing a transition metal such as chromium having conductivity is provided on the surface of the translucent film layer 2. Is also good.
[0028]
On the translucent film layer 2 of the halftone phase shift mask of the present invention, a predetermined photosensitive resist is applied by a spin coating method to form an electron beam resist layer. Next, a pattern is drawn and formed on the electron beam resist layer by an electron beam drawing method. Next, an electron beam resist pattern is formed by a development process. Next, a pattern is formed in the translucent film layer 2 by dry etching. Next, after stripping the electron beam resist layer 3 by a stripping process, a halftone phase shift mask is completed.
[0029]
FIG. 1B is a side sectional view of one embodiment of a halftone type phase shift mask according to the present invention. In the halftone type phase shift mask 20 of the present invention, a mask pattern 3 composed of a translucent film layer 2 on a substrate 1 is formed. The transmitted light transmitted through the mask pattern portion 3 and the non-mask pattern portion has a phase difference of 180 degrees, and the mask pattern 3 portion has a reduced projection exposure in a photolithography step in a semiconductor device manufacturing process in order to optimize the transmittance. Is determined such that the effect of improving the resolution and the effect of improving the depth of focus can be obtained without being exposed to the photoresist on the wafer of the transfer-receiving object. That is, the transmitted light of the mask pattern 3 portion and the non-mask pattern portion forms an edge shape by weakening the light intensity at the boundary portion where diffraction and interference occur.
[0030]
In the manufacture of semiconductor devices, a reduction projection exposure apparatus (stepper), which is an exposure apparatus, is used. The halftone phase shift mask is used as a mask of a reduction projection exposure apparatus. The reduction projection exposure apparatus is an apparatus for transferring a pattern by reducing and projecting the halftone phase shift mask with an exposure light beam to form an image on a substrate (wafer) of a semiconductor device. Normally, in a method of manufacturing a semiconductor device, there is a step of transferring and forming a pattern to be reduced and projected by a reduction projection exposure apparatus equipped with a halftone type phase shift mask on a substrate (wafer) as a subject. In the pattern transfer process, accuracy of the pattern shape is required, and reproducibility of the fine pattern is required as an important factor. The method of manufacturing a semiconductor device of the present invention is a method of using the halftone phase shift mask of the present invention as a mask to be mounted on a reduction projection exposure apparatus. That is, this is a known manufacturing method in which a photomask for reduction projection exposure transfer used in a photolithography step in a process of manufacturing a semiconductor device is changed to the halftone type phase shift mask of the present invention.
[0031]
<Example 1>
First, using a DC sputtering apparatus, an argon (Ar) gas and a nitrogen (N2) gas are introduced into a chamber with a gas ratio set according to conditions, and the quartz sputtering is performed on a quartz glass substrate by reactive sputtering using a zirconium silicide target. Then, a semi-transparent film layer of zirconium silicon nitride (ZrSiN) was formed to have a thickness of 800 ° and a phase difference of 180 ° with respect to a wavelength of 193 nm.
[0032]
These films were measured for sheet resistance using an insulation resistivity meter based on JIS-K6911-1995. Table 1 (Conditions 1 to 9) shows the results of the sheet resistance values with respect to the film forming gas conditions at that time. Table 1 shows conditions for forming zirconium silicon nitride in Example 1.
[0033]
[Table 1]

[0034]
After forming a metal layer of chromium oxide and a chromium layer on the semitransparent film layer on one side of the halftone phase shift mask blank under the conditions 1 to 9 described above, an electron beam resist layer is formed by spin coating, A blank for a tone-type phase shift mask was prepared.
[0035]
Further, the blank for the halftone type phase shift mask was patterned on an electron beam resist by an electron beam drawing machine. Subsequently, the chromium layer of the metal layer is etched, and after the etching process of the translucent film layer, the electron beam resist and the chromium layer of the metal layer are peeled off and removed. Created.
[0036]
By observing a pattern formed of zirconium silicon nitride of the halftone type phase shift mask by CD-SEM (acceleration voltage: 25 kV), can a contrast of a secondary electron image from the semitransparent film layer and the quartz glass substrate be obtained? I checked. The results are shown in Table 2 (conditions 1 to 9). Table 2 shows the presence or absence of contrast in the CD-SEM of the halftone phase shift mask in Example 1.
[0037]
[Table 2]

[0038]
In addition, MPM-193 made by Lasertec was used for the measurement of the phase difference.
[0039]
<Example 2>
Using a DC sputtering apparatus, an argon (Ar) gas and an oxygen (O2) gas are introduced into a chamber at a set gas ratio depending on conditions, and are first deposited on a quartz glass substrate by reactive sputtering using a zirconium silicide target. Zirconium silicate (ZrSiO) was laminated at 200 °. This layer is referred to as layer A.
[0040]
Subsequently, a zirconium silicate layer having a higher transparency than the A layer is laminated on the A layer by reactive sputtering of Ar and O 2 gas at 800 °, and this layer is used as a B layer. That is, the translucent film layers A and B were formed on the substrate. Table 3 shows the gas conditions of the A layer and the B layer. Table 3 (Conditions 10 to 13) shows zirconium silicate formation conditions and sheet resistance values in Example 2.
[0041]
[Table 3]

[0042]
The sheet resistance of the translucent film layer was measured with an insulation resistivity meter based on JIS-K6911-1995. The results of the sheet resistance are shown in the results section of Table 3 above.
[0043]
Further, the transmittance of the translucent film layer in the light of 193 nm and 157 nm was determined by J. Org. A. The measurement was performed using Woollam's VUV-Base. The results are shown in FIG. 4 (conditions 10 to 13). Table 4 shows the transmittance of zirconium silicate in Example 2.
[0044]
[Table 4]

[0045]
Next, after a chromium oxide and a chromium layer of a metal layer were formed on the surface of the translucent film layer on the base material, an electron beam resist layer was formed on the entire surface thereof, thereby producing a blank for a halftone phase shift mask.
[0046]
Further, the blank for the halftone type phase shift mask was patterned on an electron beam resist by an electron beam drawing machine. Subsequently, the metal layer was etched, the translucent film layer serving as a phase shifter was etched, and after pattern formation, the electron beam resist and the metal layer were peeled off to prepare a halftone phase shift mask (conditions 10 to 13).
[0047]
By observing the pattern of the halftone type phase shift mask formed of zirconium silicon nitride by CD-SEM (acceleration voltage: 25 kV), the surface of the semitransparent film layer and the surface of the quartz glass substrate were compared with the secondary electron image. We checked whether contrast could be obtained. Table 5 shows the results. Table 5 shows the presence or absence of contrast in the CD-SEM of the halftone type phase shift mask in Example 2.
[0048]
[Table 5]

[0049]
【The invention's effect】
As described above, according to the blank or mask for a halftone phase shift mask of the present invention and the method for manufacturing the same, the phase difference and transmittance, which are the roles of the original halftone phase shift mask, are modulated, and the pattern is modulated. By optimizing the sheet resistance in combination with the feature of improving the resolving power, secondary electrons can be used at the time of photomask fabrication. Therefore, photomasks fabricated using the blank of the present invention can be measured by CD-SEM. Thus, the photomask manufactured by using the blank of the present invention has an effect that the visibility at the time of repair by the FIB can be secured.
[Brief description of the drawings]
FIG. 1 is a side sectional view of an embodiment of a halftone phase shift mask blank and a phase shift mask using the same according to the present invention, wherein (a) is a blank for a phase shift mask, and (b) is a blank. , Phase shift mask.
[Explanation of symbols]
1 ... substrate (of transparent glass) 2 ... translucent thin film (semi-transparent film layer)
3 ... pattern (of mask) 10 ... blank for halftone type phase shift mask 20 ... halftone type phase shift mask

Claims (3)

The phase difference or transmittance of a blank for a halftone type phase shift mask in which a single-layer or multi-layer thin film layer which is semi-transparent and whose phase and transmittance are controlled with respect to an exposure light source on a transparent glass substrate is formed. A sheet resistance value measured on the surface of the thin film layer formed for the purpose of controlling the thickness of the thin film layer is 1 × 10 ⁸ Ω / □ to 1 × 10 ¹⁴ Ω / □. blank. 2. The halftone phase shift mask according to claim 1, wherein a pattern portion is provided in the thin film layer by a photolithographic technique during a manufacturing process of the halftone phase shift mask. mask. The halftone type phase shift mask is mounted on a reduction projection exposure apparatus that irradiates an ArF excimer laser or an F2 excimer laser by a photolithographic technique during a semiconductor device manufacturing process, and a pattern unit that performs reduction projection on a substrate for a semiconductor device. 3. A method for manufacturing a semiconductor device using a halftone phase shift mask according to claim 2, wherein:

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