JP2004128250A - Optical communication module and optical element carrier used therefor - Google Patents

Optical communication module and optical element carrier used therefor Download PDF

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Publication number
JP2004128250A
JP2004128250A JP2002290942A JP2002290942A JP2004128250A JP 2004128250 A JP2004128250 A JP 2004128250A JP 2002290942 A JP2002290942 A JP 2002290942A JP 2002290942 A JP2002290942 A JP 2002290942A JP 2004128250 A JP2004128250 A JP 2004128250A
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Prior art keywords
main surface
wiring conductor
wiring
metal support
package
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JP2002290942A
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Japanese (ja)
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Tadaaki Hosokawa
細川　忠昭
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Toshiba Corp
Toshiba Development and Engineering Corp
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Toshiba Corp
Toshiba Electronic Engineering Co Ltd
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Priority to JP2002290942A priority Critical patent/JP2004128250A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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Abstract

<P>PROBLEM TO BE SOLVED: To realize improvement of characteristics of an optical communication module in a high-speed/high-frequency range. <P>SOLUTION: The optical communication module comprises a package 2 with a cut part 1, an amplifier IC 3, and a photodetecting element carrier 4. A bias application wire conductor 21 of a photodetecting element 5 and a bias application wire layer 9b of the package 2, an output wire conductor 20 of the photodetecting element 5 and an input terminal 22 of the amplifier IC 3, a grounding wire layer 8 of the package 2, a grounding wire conductor 18 of the photodetecting element 5, a ground terminal 16 of the amplifier IC3, and a grounding wire conductor 18 of the photodetecting element 5 and a ground terminal 16 of the amplifier IC 13, are connected respectively with bonding wires 14. A power supply terminal 13 of the amplifier IC 13 is connected to a bias application wire layer 9a of the amplifier IC 3 through a bypass capacitor 12a by a bonding wire 14 and an output terminal 15 of the amplifier IC 3 is connected to an output wire layer 10a of the package 2. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、光通信モジュールに係わり、特に、１Ｇｂｐｓ（Ｇｉｇａｂｉｔ　ｐｅｒ　ｓｅｃｏｎｄ）以上の高速度・高周波に適合する光通信モジュールおよびそれに用いられる光素子キャリアに関する。
【０００２】
【従来の技術】
近年、１Ｇｂｐｓ以上の高速度・高周波領域で使用する光通信モジュールが実用化されている。この種の光通信モジュールとしては、図８乃至図１０に示すものが知られている（例えば、特許文献１参照。）。
【０００３】
図８は光通信モジュールの上面図、図９は図８のＢ−Ｂ線に沿う光通信モジュールの断面図、図１０は光通信モジュールに使用される受光素子キャリアの斜視図である。
【０００４】
この特許文献１に開示された光通信モジュールは、例えば、図８及び図９に示すように、一側端部に切欠部１０１を有するパッケージ１０２と、パッケージ１０２上に設けられたアンプＩＣ１０３と、切欠部１０１上に取りつけられた受光素子キャリア１０４とから構成されている。
【０００５】
そして、図示略のファイバーからの光信号を受光素子キャリア１０４上にある受光素子１０５で受け、微弱な信号をアンプＩＣ１０３で増幅し、電気信号を出力するようになっている。
【０００６】
パッケージ１０２は、一側面部に切欠部１０１を有する金属製支持基板１０６と、この金属製支持基板１０６上面に設けられたセラミック製の回路基板１０７からなる。この回路基板１０７上面には、接地用の配線層１０８、アンプＩＣ１０３のバイアス印加用の配線層１０９ａ、受光素子１０５のバイアス印加用の配線層１０９ｂ、及び光通信モジュールの出力配線層１１０がそれぞれ形成され、金属製支持基板１０６と接地用の配線層１０８は、スルーホール１１１を介して電気的に接続されている。
【０００７】
接地用の配線層１０８上には、アンプＩＣ１０３とバイパスコンデンサ１１２ａがそれぞれ固着され、アンプＩＣ１０３の電源端子１１３は、バイパスコンデンサ１１２ａを介してバイアス印加用の配線層１０９ａとボンデイングワイヤ１１４で接続され、アンプＩＣ１０３の出力端子１１５は、光通信モジュールの出力配線層１１０とボンデイングワイヤ１１４で接続され、アンプＩＣ１０３の接地端子１１６は、接地用の配線層１０８とボンデイングワイヤ１１４でそれぞれ接続されている。
【０００８】
一方、受光素子キャリア１０４は、図１０に示すように、方形状のセラミック製の絶縁性支持体１１７の第１主面（前面）Ｓ１上には、接地用の配線導体１１８、受光素子１０５のマウント用の配線導体１１９、出力用の配線導体１２０、及びバイアス印加用の配線導体１２１がそれぞれ形成され、また、接地用の配線導体１１８、出力用の配線導体１２０、及びバイアス印加用の配線導体１２１は、第２主面（上面）Ｓ２にまで延在形成されている。
【０００９】
そして、接地用の配線導体１１８上には、バイパスコンデンサ１１２ｂが、マウント用の配線導体１１９上には、受光素子１０５が、それぞれ形成されている。
【００１０】
受光素子１０５と出力用の配線導体１２０、マウント用の配線導体１１９とバイパスコンデンサ１１２ｂ、及びバイアス印加用の配線導体１２１とバイパスコンデンサ１１２ｂは、ボンデイングワイヤ１１４でそれぞれ接続されている。
【００１１】
この受光素子キャリア１０４は、パッケージ１０２の切欠部１０１に載置され、半田づけによりパッケージ１０２に固定されている。
【００１２】
そして、受光素子１０５のバイアス印加用の配線導体１２１とパッケージ１０２のバイアス印加用の配線層１０９ｂがボンデイングワイヤ１１４で、受光素子１０５の接地用の配線導体１１８とパッケージ１０２の接地用の配線層１０８がボンデイングワイヤ１１４ａで、受光素子１０５の接地用の配線導体１１８とアンプＩＣ１０３の接地端子１１６がボンデイングワイヤ１１４ｂで、受光素子１０５の出力用の配線導体１２０とアンプＩＣ１０３の入力端子１２２がボンデイングワイヤ１１４ｃで、それぞれ接続されている。
【００１３】
【特許文献１】
特開平４−２２９０７号公報（第８頁、第５図）
【００１４】
【発明が解決しようとする課題】
上述した従来の光通信モジュールにおいては、ボンディングワイヤが長く、接地用の金属配線導体１１８のボンディング領域が少なく、接地リード本数が少ない等の構成になっており、寄生インダクタンス（以下寄生Ｌという）と寄生容量により生じる寄生ＬＣ共振、及び受光素子１０５とアンプＩＣ１０３間を接続する信号線のインダクタンス（以下Ｌという）がそれぞれ適正化されていないので、特に１０Ｇｂｐｓ以上の高速度・高周波領域での利得特性に、ピーキングの発生や高周波領域でのフラットで伸びのある利得特性が得られないなどの問題を有していた。
【００１５】
本発明は、上記問題に鑑みてなされたもので、その目的とするところは、高速度・高周波領域での利得特性劣化をおさえて、安定した利得特性を有する光通信モジュールおよびそれに用いられる光素子キャリアを提供することにある。
【００１６】
【課題を解決するための手段】
上記目的を達成するために、本発明の光素子キャリアは、方形状の絶縁性支持体と、前記絶縁性支持体の第１主面の中間部に互いに離間して形成され、少なくとも第１主面と連続する第２の主面に延びる第１配線導体と、前記第１主面における前記第１配線導体間に、この第１配線導体と絶縁して形成された第２配線導体と、前記第２配線導体に隣接し、且つこの第２配線導体と絶縁して第１主面に形成され、前記第２主面まで延びる第３配線導体と、前記第１主面における前記絶縁性支持体端部と前記第１配線導体との間の少なくとも一方に、前記第１配線導体と絶縁して形成され、前記第２主面まで延びる第４配線導体とを具備したことを特徴とする。
【００１７】
また、上記目的を達成するために、本発明の光通信モジュールは、金属製支持基板とこの金属製支持基板上に設けられた回路基板とを有するパッケージと、前記回路基板の接地用の配線層上に設けられたアンプＩＣと、方形状の絶縁性支持体と、この絶縁性支持体の第１主面の中間部に互いに離間して形成され、少なくとも第１主面と連続する第２主面に延びる第１配線導体と、前記第１主面における前記第１配線導体間に、この第１配線導体と絶縁して形成された第２配線導体と、前記第２配線導体に隣接し、且つこの第２配線導体と絶縁して第１主面に形成され、前記第２主面まで延びる第３配線導体と、前記第１主面における前記絶縁性支持体端部と前記第１配線導体との間の少なくとも一方に、前記第１配線導体と絶縁して形成され、前記第２主面まで延びる第４配線導体と、前記第２配線導体上に固着され、前記第３及び第４配線導体と電気的に接続された光素子を有し、且つ前記パッケージに固着された光素子キャリアとを具備し、前記光素子キャリアの第１配線導体と前記パッケージの接地用の配線層とが電気的に接続されていることを特徴とする。
【００１８】
上記構成によれば、金属配線層、ボンディングワイヤ、接地リード等のＬと受光素子部の寄生容量を低減できる構造を有しているから、高速度・高周波領域での利得特性劣化をおさえ、安定した利得特性を有する光通信モジュールおよびそれに用いられる光素子キャリアを提供できる。
【００１９】
【発明の実施の形態】
以下本発明の実施形態について図面を参照しながら説明する。
【００２０】
（第１の実施の形態）
まず、本発明による光通信モジュールの第１の実施の形態について図１乃至図３を参照して説明する。図１は光通信モジュールの上面図、図２は図１のＡ−Ａ線に沿う光通信モジュールの断面図、図３は光通信モジュールに使用される受光素子キャリアの斜視図であり、図３（ａ）は第１主面側から見た斜視図、図３（ｂ）は第３主面側から見た斜視図である。
【００２１】
図１及び図２に示すように、本実施の形態の光通信モジュールは、一側端部に切欠部１を有するパッケージ２と、パッケージ２上に設けられたアンプＩＣ３と、切欠部１上に取りつけられた受光素子キャリア４とから構成されている。
【００２２】
そして、図示略のファイバーからの光信号を受光素子キャリア４上にある受光素子５で受け、微弱な信号をアンプＩＣ３で増幅し、電気信号を出力するようになっている。
【００２３】
パッケージ２は、例えば銅―タンタル（Ｃｕ−Ｔａ）からなる、一側端部に切欠部１を有する金属製支持基板６と、この金属製支持基板６上面に設けられたセラミック製の回路基板７との積層構造からなっている。そして、この回路基板７上面には、接地用の配線層８、アンプＩＣ３のバイアス印加用の配線層９ａ、受光素子５のバイアス印加用の配線層９ｂ、及び光通信モジュールの出力配線層１０ａが、それぞれ所定パターンに形成され、金属製支持基板６と接地用の配線層８は、スルーホール１１ａを介して電気的に接続されている。
【００２４】
接地用の配線層８上には、アンプＩＣ３とバイパスコンデンサ１２ａがそれぞれ固着され、アンプＩＣ３の電源端子１３は、バイパスコンデンサ１２ａを介してバイアス印加用の配線層９ａとボンデイングワイヤ１４で接続され、アンプＩＣ３の出力端子１５は、光通信モジュールの出力配線層１０ａとボンデイングワイヤ１４で接続され、アンプＩＣ３の接地端子１６は、接地用の配線層８とボンデイングワイヤ１４でそれぞれ接続されている。
【００２５】
一方、受光素子キャリア４は、図３に示すように、方形状のセラミック製の絶縁性支持体１７を有している。この絶縁性支持体１７の第１主面（前面）Ｓ１の中間部分には、接地用の配線導体（第１配線導体）１８が互いに離間して形成され、接地用の配線導体１８間の第１主面Ｓ１には、受光素子５のマウント用の配線導体（第２配線導体）１９及び出力用の配線導体（第３配線導体）２０が互いに絶縁して設けられ、絶縁性支持体１７の側端部と接地用の配線導体１８との間の第１主面Ｓ１には、バイアス印加用の配線導体（第４配線導体）２１が形成されている。
【００２６】
この接地用の配線導体１８は、絶縁性支持体１７の第１主面Ｓ１から、これと連続する第２主面（上面）Ｓ２、第１主面Ｓ１と対向する第３主面（裏面）Ｓ３及び第２主面Ｓ２と対向する第４主面（下面）Ｓ４まで延在形成され、第３主面Ｓ３及び第４主面Ｓ４においては、ほぼ全面全体に形成され、第１主面Ｓ１と第３主面Ｓ３の接地用の配線導体１８は、スルーホール１１ｂを介して互いに接続されている。また、出力用の配線導体２０とバイアス印加用の配線導体２１は、第１主面Ｓ１と第２主面Ｓ２に延在形成されている。
【００２７】
そして、接地用の配線導体１８上には、バイパスコンデンサ１２ｂが、マウント用の配線導体１９上には、受光素子１０５が、それぞれ固着されている。
【００２８】
受光素子５と出力用の配線導体２０、マウント用の配線導体１９とバイパスコンデンサ１２ｂ、及びバイアス印加用の配線導体２１とバイパスコンデンサ１２ｂは、ボンデイングワイヤ１４でそれぞれ接続されている。
【００２９】
この受光素子キャリア４は、その第４主面側Ｓ４をパッケージ２の切欠部１に向けて載置され、半田づけによりパッケージ２に固定されている。
【００３０】
そして、受光素子５のバイアス印加用の配線導体２１とパッケージ２のバイアス印加用の配線層９ｂがボンデイングワイヤ１４で、受光素子５の接地用の配線導体１８とパッケージ２の接地用の配線層８がボンデイングワイヤ１４ａで、受光素子５の接地用の配線導体１８とアンプＩＣ３の接地端子１６がボンデイングワイヤ１４ｂで、受光素子５の出力用の配線導体２０とアンプＩＣ３の入力端子２２がボンデイングワイヤ１４ｃで、それぞれ接続されている。
【００３１】
本実施の形態の光通信モジュールは、接地用の配線導体１８を１ケ所から２ケ所に増やしているので、接地リードのボンディングワイヤ１４ａの本数を３本から６本に増加でき、且つ長さを短くでき、また、アンプＩＣ３と受光素子キャリア４の距離を短くしているので、受光素子５の接地用の配線導体１８とアンプＩＣ３の接地端子１６間のボンディングワイヤ１４ｂ長を半減でき、さらに、受光素子キャリア４は、受光素子５の両側と受光素子キャリア４の第１主面Ｓ１、第２主面Ｓ２、第３主面Ｓ３、及び第４主面Ｓ４の４面に接地用の配線導体１８を形成しているので、寄生Ｌと寄生容量を減少でき、寄生ＬＣ共振が抑制され、ピーキング発生をなくすことができる。
【００３２】
また、アンプＩＣ３と受光素子キャリア４の距離を短くし、受光素子５の出力用の配線導体２０とアンプＩＣ３の入力端子２２間のボンディングワイヤ１４長を半減したことにより、受光素子５とアンプＩＣ３間を接続する信号線のＬを小さくでき、ＬＣ共振周波数を上げ、帯域をのばすことができる。
【００３３】
従って、この寄生ＬＣ共振の抑制とＬＣ共振周波数を上げることができることにより、高速度・高周波領域までピーキングと波形のおちこみのない、フラットな利得特性を有する光通信モジュールが得られる。
【００３４】
図４は、１０Ｇｂｐｓ光通信モジュールでの利得と周波数の関係を示した特性図で、図中の実線（ａ）は本実施の形態の特性を示し、破線（ｂ）は従来の特性を示す。
【００３５】
この特性図から明白なように、従来では、寄生ＬＣ共振の発生および信号線Ｌの大によるＬＣ共振周波数がさがることにより、９ＧＨｚ付近でのピーキング、１０．５ＧＨｚ付近での波形のおちこみが発生し、１０ＧＨｚ付近から１２ＧＨｚ付近において波形のブレおよび利得低下により規格（１０ＧＨｚまで、±３ｄＢ以内でフラットな利得特性を有すること）を大きく逸脱している。
【００３６】
一方、本実施の形態では、寄生ＬＣの削減および信号線のＬを減らすことができるので、１２ＧＨｚ付近までフラットな利得特性が得られており、規格を充分満足している。
【００３７】
（第２の実施の形態）
次に、本発明による光通信モジュールの第２の実施の形態について図５を参照して説明する。図５は光通信モジュールに使用される受光素子キャリアの斜視図、図５（ａ）は第１主面側から見た斜視図、図５（ｂ）は第３主面側から見た斜視図である。この第２の実施の形態は、第１の実施の形態とは受光素子キャリア４の構造が異なり、それ以外の構成については同じである。
【００３８】
図５に示すように、本実施の形態の受光素子キャリア４は、方形状の金属製支持体２３の第２主面Ｓ２の中央部に方形状のセラミック製の絶縁性ブロック（第１絶縁性ブロック）２４が埋め込まれ、また、第２主面Ｓ２の両側端部に方形状のセラミック製の絶縁性ブロック（第２絶縁性ブロック）２５が埋込まれた方形状の構造をしている。中央部の絶縁性ブロック２４と両側端部の絶縁性ブロック２５は、金属製支持体２３で離間して形成されている。
【００３９】
ここでは、絶縁性ブロック２４は、その第１主面　（表面）Ｓ１、第２主面（上面）　Ｓ２、及び第３主面（裏面）Ｓ３部分が露呈され、絶縁性ブロック２５は、その第１主面Ｓ１、第２主面Ｓ２、第３主面Ｓ３、及び側面部分が露呈されているが、必ずしも、絶縁性ブロックの第３主面Ｓ３、または側面部分は、露呈される必要はない。
【００４０】
金属製支持体２３の中央部に埋込まれた絶縁ブロック２４の第１主面Ｓ１には、受光素子５のマウント用の配線導体１９及び出力用の配線導体２０が互いに絶縁して設けられ、金属製支持体２３の両側端部に埋込まれた絶縁性ブロック２５の第１主面Ｓ１には、バイアス印加用の配線導体２１が形成されている。
【００４１】
また、出力用の配線導体２０とバイアス印加用の配線導体２１は、絶縁性ブロック２４、及び２５の第１主面Ｓ１と第２主面Ｓ２にそれぞれ延在形成され、金属製支持体２３は、受光素子５の第１配線導体としての接地用の配線導体としても使用される。
【００４２】
そして、金属製支持体２３の第１主面Ｓ１上には、バイパスコンデンサ１２ｂが、マウント用の配線導体１９上には、受光素子５が、それぞれ固着されている。受光素子５と出力用の配線導体２０、マウント用の配線導体１９とバイパスコンデンサ１２ｂ、及びバイアス印加用の配線導体２１とバイパスコンデンサ１２ｂは、ボンデイングワイヤ１４でそれぞれ接続されている。
【００４３】
この受光素子キャリア４は、図１及び図２に示す上記第１の実施の形態と同様に、その第４主面側をパッケージ２の切欠部１に向けて載置され、半田づけによりパッケージ２に固定されている。
【００４４】
受光素子５のバイアス印加用の配線導体２１とパッケージ２のバイアス印加用の配線層９ｂがボンデイングワイヤ１４で、受光素子５の接地用の配線導体１８とパッケージ２の接地用の配線層８がボンデイングワイヤ１４ａで、受光素子５の接地用の配線導体１８とアンプＩＣ３の接地端子１６がボンデイングワイヤ１４ｂで、受光素子５の出力用の配線導体２０とアンプＩＣ３の入力端子２２がボンデイングワイヤ１４ｃで、それぞれ接続されている。
【００４５】
本実施の形態の光通信モジュールは、接地用の配線導体１８を１ケ所から２ケ所に増やしているので、接地リードのボンディングワイヤ１４の本数を３本から６本に増加でき、且つ長さを短くでき、また、アンプＩＣ３と受光素子キャリア４の距離を短くしているので、受光素子５の接地用の配線導体１８とアンプＩＣ３の接地端子１６間のボンディングワイヤ１４ａ長を半減でき、さらに、受光素子キャリア４は、中央部の絶縁性ブロック２４、及び両端部の絶縁性ブロック２５以外すべてを金属製支持体２３からなるグランドにすることにより、寄生Ｌと寄生容量を減少でき、寄生ＬＣ共振が抑制でき、ピーキング発生をなくすことができる。
【００４６】
また、アンプＩＣ３と受光素子キャリア４の距離を短くし、受光素子５の出力用の配線導体２０とアンプＩＣ３の入力端子２２間のボンディングワイヤ１４長を半減したことにより、受光素子５とアンプＩＣ３間を接続する信号線のＬを小さくでき、ＬＣ共振周波数を上げ、帯域をのばすことができる。
【００４７】
この寄生ＬＣ共振の抑制とＬＣ共振周波数を上げることができることにより、高速度・高周波領域までピーキングと波形のおちこみのない、フラットな利得特性を有する光通信モジュールが得られる。
【００４８】
（第３の実施の形態）
次に、本発明による光通信モジュールの第３の実施の形態について図６及び図７を参照して説明する。図６は光通信モジュールの斜視図であり、図７は光通信モジュールに使用される受光素子キャリアの斜視図であり、図７（ａ）は第１主面側から見た斜視図、図７（ｂ）は第３主面側から見た斜視図である。
【００４９】
図６及び図７に示すように、本実施の形態の光通信モジュールは、パッケージ２と、パッケージ２上に設けられたアンプＩＣ３と、パッケージ２上に取りつけられた受光素子キャリア４とから構成されている。
【００５０】
そして、図示略のファイバーからの光信号を受光素子キャリア４上にある受光素子５で受け、微弱な信号をアンプＩＣ３で増幅し、電気信号を出力するようになっている。
【００５１】
パッケージ２は、例えば銅―タンタル（Ｃｕ−Ｔａ）からなる、金属製支持基板６と、この金属製支持基板６上面に設けられたセラミック製の回路基板７との積層構造からなっている。そして、この回路基板７上面には、接地用の配線層８、アンプＩＣ３のバイアス印加用の配線層９ａ、受光素子５のバイアス印加用の配線層９ｂ、光通信モジュールの出力配線層１０ａ、及び受光素子５の出力配線層１０ｂがそれぞれ所定パターンに形成され、金属製支持基板６と接地用の配線層８は、スルーホール１１ａを介して電気的に接続されている。
【００５２】
接地用の配線層８上には、アンプＩＣ３とバイパスコンデンサ１２ａが、それぞれ固着され、アンプＩＣ３の電源端子１３は、バイパスコンデンサ１２ａを介してバイアス印加用の配線層９ａとボンデイングワイヤ１４で接続され、アンプＩＣ３の出力端子１５は、光通信モジュールの出力配線層１０ａとボンデイングワイヤ１４で接続され、アンプＩＣ３の接地端子１６は、接地用の配線層８とボンデイングワイヤ１４で接続され、アンプＩＣ３入力端子２２は、受光素子５の出力配線層１０ｂとボンデイングワイヤ１４でそれぞれ接続されている。
【００５３】
一方、受光素子キャリア４は、図７に示すように、方形状の金属製支持体２３の第２主面Ｓ２の中央部に方形状のセラミック製の絶縁性ブロック２４が埋込まれ、第２主面Ｓ２の両側端部に方形状のセラミック製の絶縁性ブロック２５が埋め込まれた方形状の構造をしている。中央部の絶縁性ブロック２４と両側端部の絶縁性ブロック２５は、金属製支持体２３で離間して形成されている。
【００５４】
ここでは、金属製支持体２３の中央部の絶縁性ブロック２４は、その第１主面Ｓ１、第２主面Ｓ２、及び第３主面Ｓ３部分が露呈され、金属製支持体２３の両側端部の絶縁性ブロック２５は、その第１主面Ｓ１、第２主面Ｓ２、第３主面Ｓ３、及び側面部分が露呈されているが、必ずしも絶縁性ブロックの第３主面Ｓ３、または側面部分が露呈する必要はない。
【００５５】
金属性支持体２３の中央部の絶縁性ブロック２４の第１主面Ｓ１には、受光素子５のマウント用の配線導体１９及び出力用の配線導体２０が互いに絶縁して設けられ、金属性支持体２３の両側端部の絶縁性ブロック２５の第１主面Ｓ１には、バイアス印加用の配線導体２１が形成されている。
【００５６】
また、出力用の配線導体２０とバイアス印加用の配線導体２１は、第１主面Ｓ１から第２主面Ｓ２の第３主面Ｓ３側端部まで延在形成され、金属製支持体２３は、受光素子５の接地用配線導体としても使用される。
【００５７】
そして、金属製支持体２３の第１主面Ｓ１上には、バイパスコンデンサ１２ｂが、マウント用の配線導体１９上には、受光素子５が、それぞれ固着されている。受光素子５と出力用の配線導体２０、マウント用の配線導体１９とバイパスコンデンサ１２ｂ、及びバイアス印加用の配線導体２１とバイパスコンデンサ１２ｂは、ボンデイングワイヤ１４でそれぞれ接続されている。
【００５８】
この受光素子キャリア４は、その第２主面Ｓ２をパッケージ２に向けて載置され、半田づけによりパッケージ２に固定されている。
【００５９】
ここで、受光素子５のバイアス印加用の配線導体２１とパッケージ２のバイアス印加用の配線層９ｂ、受光素子キャリア４の金属製支持体２３とパッケージ２の接地用の配線層８、及び受光素子５の出力用の配線導体２０とパッケージ２の出力配線層１０ｂが、それぞれ直接半田づけされて電気的に接続されている。
【００６０】
本実施の形態の光通信モジュールは、受光素子キャリア４の接地用の配線導体１８（金属製支持体部分２３）とパッケージ２の接地用の配線層８がボンディングワイヤ１４を介さず直接半田づけされ、受光素子キャリア４のグランドとアンプＩＣ３の接地端子１６間のボンディングワイヤ１４ｂを削減できることで、接地リードの削減が可能となり、受光素子キャリア４は、マウント用の配線導体１９と出力用の配線導体２０が設けられる絶縁性ブロック２４と、バイアス印加用の配線導体２１が設けられる絶縁性ブロック２５以外すべて金属製支持体２３からなるグランドにすることにより、寄生容量を削減できる。
【００６１】
寄生Ｌと寄生容量の削減により、寄生ＬＣ共振が抑制され、ピーキング発生をなくすことができる。
【００６２】
受光素子５のバイアス印加用の配線導体２１とパッケージ２のバイアス印加用の配線層９ｂが直接半田づけされ、ボンディングワイヤ１４を削減したことにより、光通信モジュールの電源ラインの信号線Ｌと容量をあわせて削減できるので、ＬＣ共振も抑制される。
【００６３】
受光素子５の出力用の配線導体２０とアンプＩＣ３の入力端子２２間のボンディングワイヤ１４ｃ長を半減したことにより、受光素子５とアンプＩＣ３間を接続する信号線のＬを小さくでき、ＬＣ共振周波数を上げることができる。
【００６４】
この寄生ＬＣ共振とＬＣ共振の抑制、及びＬＣ共振周波数を上げることができることにより、高速度・高周波領域までピーキングと波形のおちこみのない、フラットな利得特性を有する光通信モジュールが得られる。
【００６５】
本発明は、上記実施の形態に限定されるものではなく、発明の要旨を逸脱しない範囲で、種々、変更して実施しても良い。
【００６６】
例えば、上記第３の実施の形態において、光素子キャリアとして、第１及び第２の実施の形態の光素子キャリアを用いても良い。
【００６７】
また、上記第１乃至３の実施の形態では、光受信機能を有する光通信モジュールについて説明したが、本発明は、受光素子キャリア、発光素子キャリア、アンプＩＣ、ドライバーＩＣ、及びパッケージから構成される光送受信機能を有する光通信モジュールにも適用可能である。
【００６８】
【発明の効果】
本発明によれば、高周波領域までフラットな利得特性を有する光通信モジュールが得られる。
【図面の簡単な説明】
【図１】本発明の第１の実施の形態に係わる光通信モジュールを示す上面図。
【図２】図１のＡ−Ａ線に沿う光通信モジュールの断面図。
【図３】本発明の第１の実施の形態に係わる光通信モジュールに使用される受光素子キャリアを示す斜視図であり、図３（ａ）は第１主面側から見た斜視図、図３（ｂ）は第３主面側より見た斜視図。
【図４】１０Ｇ光通信モジュールの利得と周波数の関係を示す特性図。
【図５】本発明の第２の実施の形態に係わる光通信モジュールに使用される受光素子キャリアを示す斜視図であり、図５（ａ）は第１主面側から見た斜視図、図５（ｂ）は第３主面側より見た斜視図。
【図６】本発明の第３の実施の形態に係わる光通信モジュールを示す斜視図。
【図７】本発明の第３の実施の形態に係わる光通信モジュールに使用される受光素子キャリアを示す斜視図であり、図７（ａ）は第１主面側から見た斜視図、図７（ｂ）は第３主面側から見た斜視図。
【図８】従来の光通信モジュールを示す上面図。
【図９】図８のＢ−Ｂ線に沿う光通信モジュールの断面図。
【図１０】従来の光通信モジュールに使用される受光素子キャリアを示す斜視図。
【符号の説明】
１、　１０１　切欠部
２、１０２　パッケージ
３、１０３　アンプＩＣ
４、１０４　光素子キャリア
５、１０５　受光素子
６、１０６　金属製支持基板
７、１０７　回路基板
８、１０８　接地用の配線層
９ａ、９ｂ、１０９ａ、１０９ｂ　バイアス印加用の配線層
１０ａ、１０ｂ、１１０　出力配線層
１１ａ、１１ｂ、１１１　スルーホール
１２ａ、１２ｂ、１１２ａ、１１２ｂ　バイパスコンデンサ
１３、１１３　電源端子
１４、１４ａ、１４ｂ、１４ｃ、１１４、１１４ａ、１１４ｂ、１１４ｃ　ボンデイングワイヤ
１５、１１５　出力端子
１６、１１６　接地端子
１７、１１７　絶縁性支持体
１８、１１８　接地用の配線導体
１９、１１９　マウント用の配線導体
２０、１２０　出力用の配線導体
２１、１２１　バイアス印加用の配線導体
２２、１２２　入力端子
２３　金属製支持体
２４、２５　絶縁性ブロック
Ｓ１　第１主面
Ｓ２　第２主面
Ｓ３　第３主面
Ｓ４　第４主面[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an optical communication module, and more particularly, to an optical communication module suitable for high speed and high frequency of 1 Gbps (Gigabit per second) or higher, and an optical element carrier used for the same.
[0002]
[Prior art]
2. Description of the Related Art In recent years, optical communication modules used in a high speed / high frequency region of 1 Gbps or more have been put to practical use. As this type of optical communication module, the one shown in FIGS. 8 to 10 is known (for example, see Patent Document 1).
[0003]
8 is a top view of the optical communication module, FIG. 9 is a cross-sectional view of the optical communication module along line BB in FIG. 8, and FIG. 10 is a perspective view of a light receiving element carrier used in the optical communication module.
[0004]
The optical communication module disclosed in Patent Document 1 includes, for example, a package 102 having a notch 101 at one side end, an amplifier IC 103 provided on the package 102, as shown in FIGS. And a light receiving element carrier 104 mounted on the notch 101.
[0005]
Then, an optical signal from an unillustrated fiber is received by the light receiving element 105 on the light receiving element carrier 104, a weak signal is amplified by the amplifier IC 103, and an electric signal is output.
[0006]
The package 102 includes a metal support substrate 106 having a notch 101 on one side surface, and a ceramic circuit board 107 provided on the upper surface of the metal support substrate 106. On the upper surface of the circuit board 107, a wiring layer 108 for grounding, a wiring layer 109a for applying a bias of the amplifier IC 103, a wiring layer 109b for applying a bias of the light receiving element 105, and an output wiring layer 110 of the optical communication module are respectively formed. The metal support substrate 106 and the wiring layer 108 for grounding are electrically connected via a through hole 111.
[0007]
The amplifier IC 103 and the bypass capacitor 112a are respectively fixed on the ground wiring layer 108, and the power supply terminal 113 of the amplifier IC 103 is connected to the bias applying wiring layer 109a via the bypass capacitor 112a via the bonding wire 114, The output terminal 115 of the amplifier IC 103 is connected to the output wiring layer 110 of the optical communication module by a bonding wire 114, and the ground terminal 116 of the amplifier IC 103 is connected to the wiring layer 108 for grounding by a bonding wire 114.
[0008]
On the other hand, as shown in FIG. 10, the light receiving element carrier 104 has a ground wiring conductor 118 and a light receiving element 105 on the first main surface (front surface) S1 of the rectangular ceramic insulating support 117. A wiring conductor 119 for mounting, a wiring conductor 120 for output, and a wiring conductor 121 for bias application are respectively formed, and a wiring conductor 118 for grounding, an output wiring conductor 120, and a wiring conductor for bias application are formed. Reference numeral 121 extends to the second main surface (upper surface) S2.
[0009]
The bypass capacitor 112b is formed on the grounding wiring conductor 118, and the light receiving element 105 is formed on the mounting wiring conductor 119.
[0010]
The light receiving element 105 and the output wiring conductor 120, the mounting wiring conductor 119 and the bypass capacitor 112b, and the bias applying wiring conductor 121 and the bypass capacitor 112b are connected by bonding wires 114, respectively.
[0011]
The light receiving element carrier 104 is mounted on the cutout 101 of the package 102 and fixed to the package 102 by soldering.
[0012]
The wiring conductor 121 for applying the bias of the light receiving element 105 and the wiring layer 109b for applying the bias of the package 102 are bonded wires 114, and the wiring conductor 118 for grounding the light receiving element 105 and the wiring layer 108 for grounding the package 102 are used. Is a bonding wire 114a, a grounding wiring conductor 118 of the light receiving element 105 and a ground terminal 116 of the amplifier IC 103 are bonding wires 114b, and an output wiring conductor 120 of the light receiving element 105 and the input terminal 122 of the amplifier IC 103 are bonding wires 114c. And are connected respectively.
[0013]
[Patent Document 1]
JP-A-4-22907 (page 8, FIG. 5)
[0014]
[Problems to be solved by the invention]
In the conventional optical communication module described above, the bonding wire is long, the bonding area of the ground metal wiring conductor 118 is small, the number of ground leads is small, and the like. Since the parasitic LC resonance caused by the parasitic capacitance and the inductance (hereinafter referred to as L) of the signal line connecting between the light receiving element 105 and the amplifier IC 103 are not optimized, respectively, the gain characteristics particularly in a high speed / high frequency region of 10 Gbps or more. In addition, there are problems such as occurrence of peaking and the inability to obtain a flat and elongated gain characteristic in a high frequency region.
[0015]
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to suppress an increase in gain characteristics in a high-speed / high-frequency region and to provide an optical communication module having stable gain characteristics and an optical element used therein. To provide a career.
[0016]
[Means for Solving the Problems]
In order to achieve the above object, an optical element carrier according to the present invention is formed so as to be spaced apart from each other at a rectangular insulating support and an intermediate portion of a first main surface of the insulating support. A first wiring conductor extending to a second main surface continuous with the surface, a second wiring conductor formed between the first wiring conductors on the first main surface and insulated from the first wiring conductor, A third wiring conductor formed on the first main surface adjacent to the second wiring conductor and insulated from the second wiring conductor and extending to the second main surface; and the insulating support on the first main surface. At least one between the end portion and the first wiring conductor includes a fourth wiring conductor formed insulated from the first wiring conductor and extending to the second main surface.
[0017]
In order to achieve the above object, an optical communication module according to the present invention includes a package having a metal support board and a circuit board provided on the metal support board, and a wiring layer for grounding the circuit board. An amplifier IC provided thereon, a rectangular insulating support, and a second main body formed at a distance from an intermediate portion of the first main surface of the insulating support and continuous with at least the first main surface. A first wiring conductor extending to a surface, a second wiring conductor formed insulated from the first wiring conductor between the first wiring conductors on the first main surface, and a second wiring conductor adjacent to the second wiring conductor; A third wiring conductor formed on the first main surface insulated from the second wiring conductor and extending to the second main surface; an end of the insulating support on the first main surface; and the first wiring conductor At least one of the first and second wiring conductors is insulated from the first wiring conductor. A fourth wiring conductor extending to the second main surface; and an optical element fixed on the second wiring conductor and electrically connected to the third and fourth wiring conductors, and fixed to the package. And a first wiring conductor of the optical element carrier and a ground wiring layer of the package are electrically connected to each other.
[0018]
According to the above configuration, since a structure capable of reducing the parasitic capacitance of the light receiving element portion and the L of the metal wiring layer, the bonding wire, the grounding lead, etc., the gain characteristics in high-speed and high-frequency regions are suppressed, and stable. An optical communication module having improved gain characteristics and an optical element carrier used in the optical communication module can be provided.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0020]
(First Embodiment)
First, an optical communication module according to a first embodiment of the present invention will be described with reference to FIGS. 1 is a top view of the optical communication module, FIG. 2 is a cross-sectional view of the optical communication module along line AA in FIG. 1, FIG. 3 is a perspective view of a light receiving element carrier used in the optical communication module, FIG. 3A is a perspective view as viewed from a first main surface side, and FIG. 3B is a perspective view as viewed from a third main surface side.
[0021]
As shown in FIGS. 1 and 2, the optical communication module according to the present embodiment includes a package 2 having a notch 1 at one end, an amplifier IC 3 provided on the package 2, and And a light receiving element carrier 4 attached thereto.
[0022]
An optical signal from a fiber (not shown) is received by the light receiving element 5 on the light receiving element carrier 4, and a weak signal is amplified by the amplifier IC 3 to output an electric signal.
[0023]
The package 2 includes, for example, a metal support substrate 6 made of, for example, copper-tantalum (Cu-Ta) and having a cutout 1 at one end, and a ceramic circuit board 7 provided on the upper surface of the metal support substrate 6. And a laminated structure. On the upper surface of the circuit board 7, a wiring layer 8 for grounding, a wiring layer 9a for applying a bias of the amplifier IC 3, a wiring layer 9b for applying a bias of the light receiving element 5, and an output wiring layer 10a of the optical communication module are provided. The metal support substrate 6 and the ground wiring layer 8 are formed in a predetermined pattern, respectively, and are electrically connected to each other through the through holes 11a.
[0024]
The amplifier IC 3 and the bypass capacitor 12a are fixed on the grounding wiring layer 8, respectively, and the power supply terminal 13 of the amplifier IC 3 is connected to the bias applying wiring layer 9a and the bonding wire 14 via the bypass capacitor 12a. The output terminal 15 of the amplifier IC 3 is connected to the output wiring layer 10a of the optical communication module by a bonding wire 14, and the ground terminal 16 of the amplifier IC 3 is connected to the wiring layer 8 for grounding by the bonding wire 14, respectively.
[0025]
On the other hand, as shown in FIG. 3, the light receiving element carrier 4 has a square ceramic insulating support 17. In a middle portion of the first main surface (front surface) S1 of the insulating support 17, grounding wiring conductors (first wiring conductors) 18 are formed apart from each other, and the first wiring conductors 18 between the grounding wiring conductors 18 are formed. On one main surface S1, a wiring conductor (second wiring conductor) 19 for mounting the light receiving element 5 and a wiring conductor (third wiring conductor) 20 for output are provided insulated from each other. A wiring conductor (fourth wiring conductor) 21 for applying a bias is formed on the first main surface S1 between the side end and the wiring conductor 18 for grounding.
[0026]
The grounding wiring conductor 18 extends from the first main surface S1 of the insulating support 17 to a second main surface (upper surface) S2 continuous with the first main surface S1, and a third main surface (back surface) opposed to the first main surface S1. The third main surface (lower surface) S4 is formed so as to extend to the fourth main surface (lower surface) S4 facing the second main surface S3 and the second main surface S2. And the wiring conductor 18 for grounding on the third main surface S3 are connected to each other via a through hole 11b. The output wiring conductor 20 and the bias application wiring conductor 21 are formed to extend on the first main surface S1 and the second main surface S2.
[0027]
The bypass capacitor 12b is fixed on the wiring conductor 18 for grounding, and the light receiving element 105 is fixed on the wiring conductor 19 for mounting.
[0028]
The light-receiving element 5 and the output wiring conductor 20, the mounting wiring conductor 19 and the bypass capacitor 12b, and the bias application wiring conductor 21 and the bypass capacitor 12b are connected by bonding wires 14, respectively.
[0029]
The light receiving element carrier 4 is placed with its fourth main surface side S4 facing the notch 1 of the package 2 and fixed to the package 2 by soldering.
[0030]
The wiring conductor 21 for applying a bias of the light receiving element 5 and the wiring layer 9b for applying a bias of the package 2 are bonded wires 14, and the wiring conductor 18 for grounding the light receiving element 5 and the wiring layer 8 for grounding the package 2 are formed. Is a bonding wire 14a, a wiring conductor 18 for grounding the light receiving element 5 and the ground terminal 16 of the amplifier IC 3 are bonding wires 14b, and a wiring conductor 20 for output of the light receiving element 5 and the input terminal 22 of the amplifier IC 3 are bonding wires 14c. And are connected respectively.
[0031]
In the optical communication module of the present embodiment, since the number of grounding wiring conductors 18 is increased from one to two, the number of grounding lead bonding wires 14a can be increased from three to six, and the length can be reduced. Since the distance between the amplifier IC 3 and the light receiving element carrier 4 is shortened, the length of the bonding wire 14b between the ground wiring conductor 18 of the light receiving element 5 and the ground terminal 16 of the amplifier IC 3 can be reduced by half. The light receiving element carrier 4 includes wiring conductors for grounding on both sides of the light receiving element 5 and four surfaces of the first main surface S1, the second main surface S2, the third main surface S3, and the fourth main surface S4 of the light receiving element carrier 4. By forming 18, the parasitic L and the parasitic capacitance can be reduced, the parasitic LC resonance is suppressed, and the occurrence of peaking can be eliminated.
[0032]
Further, the distance between the amplifier IC 3 and the light receiving element carrier 4 is reduced, and the length of the bonding wire 14 between the output wiring conductor 20 of the light receiving element 5 and the input terminal 22 of the amplifier IC 3 is reduced by half. The L of the signal line connecting between them can be reduced, the LC resonance frequency can be increased, and the band can be extended.
[0033]
Therefore, by suppressing the parasitic LC resonance and increasing the LC resonance frequency, it is possible to obtain an optical communication module having a flat gain characteristic free from peaking and waveform fall even in a high-speed and high-frequency region.
[0034]
FIG. 4 is a characteristic diagram showing the relationship between the gain and the frequency in the 10 Gbps optical communication module. In the figure, the solid line (a) shows the characteristics of the present embodiment, and the broken line (b) shows the conventional characteristics.
[0035]
As is clear from the characteristic diagram, in the related art, the occurrence of the parasitic LC resonance and the decrease of the LC resonance frequency due to the large signal line L cause the peaking at around 9 GHz and the generation of the waveform at around 10.5 GHz. In the range from about 10 GHz to about 12 GHz, the standard largely deviates from the standard (having a flat gain characteristic within ± 3 dB up to 10 GHz) due to waveform fluctuation and gain reduction.
[0036]
On the other hand, in the present embodiment, since the parasitic LC can be reduced and the L of the signal line can be reduced, a flat gain characteristic is obtained up to around 12 GHz, which sufficiently satisfies the standard.
[0037]
(Second embodiment)
Next, a second embodiment of the optical communication module according to the present invention will be described with reference to FIG. 5 is a perspective view of a light receiving element carrier used in the optical communication module, FIG. 5A is a perspective view as viewed from a first main surface side, and FIG. 5B is a perspective view as viewed from a third main surface side. It is. The second embodiment is different from the first embodiment in the structure of the light receiving element carrier 4, and the other configurations are the same.
[0038]
As shown in FIG. 5, the light-receiving element carrier 4 of the present embodiment has a square ceramic insulating block (first insulating property) at the center of the second main surface S2 of the square metal support 23. Blocks 24 are buried, and a rectangular ceramic insulating block (second insulating block) 25 is buried at both end portions of the second main surface S2. The insulating block 24 at the center and the insulating blocks 25 at both end portions are formed separately by a metal support 23.
[0039]
Here, the first main surface (front surface) S1, the second main surface (upper surface) S2, and the third main surface (rear surface) S3 of the insulating block 24 are exposed, and the insulating block 25 is The first main surface S1, the second main surface S2, the third main surface S3, and the side surface portion are exposed, but the third main surface S3 or the side surface portion of the insulating block does not necessarily need to be exposed. .
[0040]
A wiring conductor 19 for mounting the light receiving element 5 and a wiring conductor 20 for output are provided on the first main surface S1 of the insulating block 24 embedded in the central portion of the metal support 23 so as to be insulated from each other. Wiring conductors 21 for bias application are formed on the first main surface S1 of the insulating block 25 embedded in both side ends of the metal support 23.
[0041]
An output wiring conductor 20 and a bias application wiring conductor 21 are formed to extend on the first main surface S1 and the second main surface S2 of the insulating blocks 24 and 25, respectively. Also, it is used as a ground wiring conductor as a first wiring conductor of the light receiving element 5.
[0042]
The bypass capacitor 12b is fixed on the first main surface S1 of the metal support 23, and the light receiving element 5 is fixed on the wiring conductor 19 for mounting. The light-receiving element 5 and the output wiring conductor 20, the mounting wiring conductor 19 and the bypass capacitor 12b, and the bias application wiring conductor 21 and the bypass capacitor 12b are connected by bonding wires 14, respectively.
[0043]
The light-receiving element carrier 4 is placed with its fourth main surface facing the notch 1 of the package 2 as in the first embodiment shown in FIGS. Fixed to.
[0044]
The wiring conductor 21 for applying the bias of the light receiving element 5 and the wiring layer 9b for applying the bias of the package 2 are bonding wires 14, and the wiring conductor 18 for grounding the light receiving element 5 and the wiring layer 8 for grounding of the package 2 are bonding. With the wire 14a, the grounding wiring conductor 18 of the light receiving element 5 and the ground terminal 16 of the amplifier IC 3 are bonding wires 14b, and the output wiring conductor 20 of the light receiving element 5 and the input terminal 22 of the amplifier IC 3 are bonding wires 14c. Each is connected.
[0045]
In the optical communication module of the present embodiment, the number of grounding wiring conductors 18 is increased from one to two, so that the number of bonding wires 14 of the ground lead can be increased from three to six and the length can be reduced. Since the distance between the amplifier IC 3 and the light receiving element carrier 4 is shortened, the length of the bonding wire 14a between the grounding wiring conductor 18 of the light receiving element 5 and the ground terminal 16 of the amplifier IC 3 can be reduced by half. The light receiving element carrier 4 can reduce the parasitic L and the parasitic capacitance by using the ground made of the metal support 23 except for the insulating block 24 at the center and the insulating blocks 25 at both ends, thereby reducing the parasitic LC resonance. Can be suppressed, and occurrence of peaking can be eliminated.
[0046]
Further, the distance between the amplifier IC 3 and the light receiving element carrier 4 is reduced, and the length of the bonding wire 14 between the output wiring conductor 20 of the light receiving element 5 and the input terminal 22 of the amplifier IC 3 is reduced by half. The L of the signal line connecting between them can be reduced, the LC resonance frequency can be increased, and the band can be extended.
[0047]
By suppressing the parasitic LC resonance and increasing the LC resonance frequency, it is possible to obtain an optical communication module having a flat gain characteristic free from peaking and waveform depression even in a high-speed and high-frequency region.
[0048]
(Third embodiment)
Next, a third embodiment of the optical communication module according to the present invention will be described with reference to FIGS. FIG. 6 is a perspective view of the optical communication module, FIG. 7 is a perspective view of a light receiving element carrier used in the optical communication module, and FIG. 7A is a perspective view seen from the first main surface side. (B) is a perspective view seen from the third main surface side.
[0049]
As shown in FIGS. 6 and 7, the optical communication module according to the present embodiment includes a package 2, an amplifier IC 3 provided on the package 2, and a light receiving element carrier 4 mounted on the package 2. ing.
[0050]
An optical signal from a fiber (not shown) is received by the light receiving element 5 on the light receiving element carrier 4, and a weak signal is amplified by the amplifier IC 3 to output an electric signal.
[0051]
The package 2 has a laminated structure of a metal support substrate 6 made of, for example, copper-tantalum (Cu-Ta) and a ceramic circuit board 7 provided on the upper surface of the metal support substrate 6. On the upper surface of the circuit board 7, a ground wiring layer 8, a bias application wiring layer 9a of the amplifier IC 3, a bias application wiring layer 9b of the light receiving element 5, an output wiring layer 10a of the optical communication module, and The output wiring layers 10b of the light receiving element 5 are formed in a predetermined pattern, respectively, and the metal support substrate 6 and the wiring layer 8 for grounding are electrically connected through the through holes 11a.
[0052]
The amplifier IC 3 and the bypass capacitor 12a are respectively fixed on the ground wiring layer 8, and the power supply terminal 13 of the amplifier IC 3 is connected to the bias applying wiring layer 9a and the bonding wire 14 via the bypass capacitor 12a. The output terminal 15 of the amplifier IC 3 is connected to the output wiring layer 10a of the optical communication module via a bonding wire 14, the ground terminal 16 of the amplifier IC 3 is connected to the ground wiring layer 8 via the bonding wire 14, and the input of the amplifier IC 3 The terminal 22 is connected to the output wiring layer 10b of the light receiving element 5 by a bonding wire 14.
[0053]
On the other hand, in the light receiving element carrier 4, as shown in FIG. 7, a square ceramic insulating block 24 is embedded in the center of the second main surface S <b> 2 of the square metal support 23. It has a rectangular structure in which rectangular ceramic insulating blocks 25 are embedded at both end portions of the main surface S2. The insulating block 24 at the center and the insulating blocks 25 at both end portions are formed separately by a metal support 23.
[0054]
Here, the first main surface S1, the second main surface S2, and the third main surface S3 of the insulating block 24 at the center of the metal support 23 are exposed, and both ends of the metal support 23 are exposed. Although the first main surface S1, the second main surface S2, the third main surface S3, and the side surface portion of the insulating block 25 are exposed, the third main surface S3 or the side surface of the insulating block is not necessarily required. No part needs to be exposed.
[0055]
On the first main surface S1 of the insulating block 24 at the center of the metallic support 23, a wiring conductor 19 for mounting the light receiving element 5 and a wiring conductor 20 for output are provided insulated from each other. Wiring conductors 21 for bias application are formed on the first main surface S1 of the insulating block 25 at both end portions of the body 23.
[0056]
The output wiring conductor 20 and the bias application wiring conductor 21 are formed to extend from the first main surface S1 to the end of the second main surface S2 on the third main surface S3 side. Also, it is used as a ground wiring conductor of the light receiving element 5.
[0057]
The bypass capacitor 12b is fixed on the first main surface S1 of the metal support 23, and the light receiving element 5 is fixed on the wiring conductor 19 for mounting. The light-receiving element 5 and the output wiring conductor 20, the mounting wiring conductor 19 and the bypass capacitor 12b, and the bias application wiring conductor 21 and the bypass capacitor 12b are connected by bonding wires 14, respectively.
[0058]
The light receiving element carrier 4 is placed with its second main surface S2 facing the package 2 and fixed to the package 2 by soldering.
[0059]
Here, the wiring conductor 21 for applying the bias of the light receiving element 5 and the wiring layer 9b for applying the bias of the package 2, the metal support 23 of the light receiving element carrier 4 and the wiring layer 8 for grounding the package 2, and the light receiving element 5, the output wiring conductor 20 and the output wiring layer 10b of the package 2 are directly soldered and electrically connected.
[0060]
In the optical communication module according to the present embodiment, the grounding wiring conductor 18 (metal support portion 23) of the light receiving element carrier 4 and the grounding wiring layer 8 of the package 2 are directly soldered without using the bonding wires 14. Since the number of bonding wires 14b between the ground of the light receiving element carrier 4 and the ground terminal 16 of the amplifier IC 3 can be reduced, the number of ground leads can be reduced, and the light receiving element carrier 4 has a mounting wiring conductor 19 and an output wiring conductor. Parasitic capacitance can be reduced by using a ground made of the metal support 23 except for the insulating block 24 provided with the wiring block 20 and the insulating block 25 provided with the wiring conductor 21 for bias application.
[0061]
By reducing the parasitic L and the parasitic capacitance, the parasitic LC resonance is suppressed, and the occurrence of peaking can be eliminated.
[0062]
The wiring conductor 21 for applying the bias of the light receiving element 5 and the wiring layer 9b for applying the bias of the package 2 are directly soldered, and the number of bonding wires 14 is reduced, so that the signal line L and the capacitance of the power line of the optical communication module can be reduced. Since it can be reduced at the same time, LC resonance is also suppressed.
[0063]
By halving the length of the bonding wire 14c between the output wiring conductor 20 of the light receiving element 5 and the input terminal 22 of the amplifier IC 3, the L of the signal line connecting the light receiving element 5 and the amplifier IC 3 can be reduced, and the LC resonance frequency can be reduced. Can be raised.
[0064]
Since the parasitic LC resonance and the LC resonance can be suppressed and the LC resonance frequency can be increased, an optical communication module having a flat gain characteristic free from peaking and waveform fall even in a high-speed and high-frequency region can be obtained.
[0065]
The present invention is not limited to the above embodiment, and may be implemented with various modifications without departing from the spirit of the invention.
[0066]
For example, in the third embodiment, the optical element carriers of the first and second embodiments may be used as the optical element carriers.
[0067]
In the first to third embodiments, the optical communication module having an optical receiving function has been described. However, the present invention includes a light receiving element carrier, a light emitting element carrier, an amplifier IC, a driver IC, and a package. The present invention is also applicable to an optical communication module having an optical transmission / reception function.
[0068]
【The invention's effect】
According to the present invention, an optical communication module having a flat gain characteristic up to a high frequency region can be obtained.
[Brief description of the drawings]
FIG. 1 is a top view showing an optical communication module according to a first embodiment of the present invention.
FIG. 2 is a sectional view of the optical communication module taken along line AA of FIG. 1;
FIG. 3 is a perspective view showing a light receiving element carrier used in the optical communication module according to the first embodiment of the present invention, and FIG. 3 (a) is a perspective view seen from a first main surface side, FIG. FIG. 3B is a perspective view seen from the third main surface side.
FIG. 4 is a characteristic diagram showing a relationship between a gain and a frequency of the 10G optical communication module.
FIG. 5 is a perspective view showing a light receiving element carrier used in an optical communication module according to a second embodiment of the present invention, and FIG. 5 (a) is a perspective view seen from a first main surface side, FIG. FIG. 5B is a perspective view as viewed from the third main surface side.
FIG. 6 is a perspective view showing an optical communication module according to a third embodiment of the present invention.
FIG. 7 is a perspective view showing a light receiving element carrier used in an optical communication module according to a third embodiment of the present invention, and FIG. 7 (a) is a perspective view seen from a first main surface side, FIG. FIG. 7B is a perspective view seen from the third main surface side.
FIG. 8 is a top view showing a conventional optical communication module.
FIG. 9 is a sectional view of the optical communication module along the line BB in FIG. 8;
FIG. 10 is a perspective view showing a light receiving element carrier used in a conventional optical communication module.
[Explanation of symbols]
1, 101 Notch
2,102 packages
3,103 Amplifier IC
4,104 Optical element carrier
5, 105 light receiving element
6,106 metal support substrate
7,107 Circuit board
8,108 Wiring layer for grounding
9a, 9b, 109a, 109b Wiring layer for applying bias
10a, 10b, 110 output wiring layer
11a, 11b, 111 Through hole
12a, 12b, 112a, 112b Bypass capacitor
13, 113 Power supply terminal
14, 14a, 14b, 14c, 114, 114a, 114b, 114c Bonding wire
15, 115 output terminal
16, 116 Ground terminal
17, 117 Insulating support
18, 118 Wiring conductor for grounding
19, 119 Wiring conductor for mounting
20, 120 Wiring conductor for output
21, 121 Wiring conductor for bias application
22, 122 input terminal
23 Metal support
24, 25 Insulating block
S1 1st main surface
S2 2nd main surface
S3 3rd main surface
S4 4th main surface

Claims (10)

方形状の絶縁性支持体と、
前記絶縁性支持体の第１主面の中間部に互いに離間して形成され、少なくとも第１主面と連続する第２の主面に延びる第１配線導体と、
前記第１主面における前記第１配線導体間に、この第１配線導体と絶縁して形成された第２配線導体と、
前記第２配線導体に隣接し、且つこの第２配線導体と絶縁して第１主面に形成され、前記第２主面まで延びる第３配線導体と、
前記第１主面における前記絶縁性支持体端部と前記第１配線導体との間の少なくとも一方に、前記第１配線導体と絶縁して形成され、前記第２主面まで延びる第４配線導体と、
を具備したことを特徴とする光素子キャリア。A rectangular insulating support,
A first wiring conductor formed at a middle part of the first main surface of the insulating support so as to be spaced apart from each other and extending at least to a second main surface continuous with the first main surface;
A second wiring conductor formed between the first wiring conductors on the first main surface and insulated from the first wiring conductor;
A third wiring conductor formed on the first main surface adjacent to the second wiring conductor and insulated from the second wiring conductor and extending to the second main surface;
A fourth wiring conductor formed on at least one of the first main surface between the end of the insulating support and the first wiring conductor insulated from the first wiring conductor and extending to the second main surface; When,
An optical element carrier comprising: 前記第１配線導体は、前記第１主面、前記第２主面、前記第１主面と対向する第３主面、及び前記第２主面と対向する第４主面まで延び、且つ前記第１主面の第１配線導体と前記第３主面の第１配線導体が、スルーホールを介して互いに電気的に接続されていることを特徴とする請求項１記載の光素子キャリア。The first wiring conductor extends to the first main surface, the second main surface, a third main surface facing the first main surface, and a fourth main surface facing the second main surface, and The optical element carrier according to claim 1, wherein the first wiring conductor on the first main surface and the first wiring conductor on the third main surface are electrically connected to each other through a through hole. 前記第３及び第４主面における前記第１配線導体は、前記絶縁性支持体の第３及び第４主面全体に形成されていることを特徴とする請求項２記載の光素子キャリア。The optical element carrier according to claim 2, wherein the first wiring conductor on the third and fourth main surfaces is formed on the entire third and fourth main surfaces of the insulating support. 前記光素子は、前記第１配線導体上に固着されるバイパスコンデンサを介して前記第４配線導体と電気的に接続されることを特徴とする請求項１乃至３のいずれか１項記載の光素子キャリア。The light according to any one of claims 1 to 3, wherein the optical element is electrically connected to the fourth wiring conductor via a bypass capacitor fixed on the first wiring conductor. Element carrier. 金属製支持体と、
前記金属製支持体の第１主面と連続する第２主面の中間部に、その第１主面が前記金属製支持体の第１主面側に、その第２主面が前記金属製支持体の第２主面側に、それぞれ露呈するように埋込まれた第１絶縁性ブロックと、
前記金属製支持体の第１主面と連続する第２主面の少なくとも一方の端部に、その第１主面が前記金属製支持体の第１主面側に、その第２主面が前記金属製支持体の第２主面側に、それぞれ露呈するように埋込まれた第２絶縁性ブロックと、前記第１絶縁性ブロックと第２絶縁性ブロック間に形成されている金属製支持体部分からなる第１配線導体と、
前記第１絶縁性ブロックの第１主面に形成された第２配線導体と、
この第２配線導体と絶縁して前記第１絶縁性ブロックの第１主面に形成され、この第１主面と連続する前記第２主面に延びる第３配線導体と、
前記第２絶縁性ブロックの第１主面に形成され、この第１主面と連続する前記第２主面に延びる第４配線導体と、
を具備したことを特徴とする光素子キャリア。A metal support;
The first main surface is located on the first main surface side of the metal support, and the second main surface is located at the middle of a second main surface continuous with the first main surface of the metal support. A first insulating block embedded so as to be exposed on the second main surface side of the support;
At least one end of a second main surface continuous with the first main surface of the metal support, the first main surface is on the first main surface side of the metal support, and the second main surface is A second insulating block embedded so as to be exposed on the second main surface side of the metal support; and a metal support formed between the first insulating block and the second insulating block. A first wiring conductor comprising a body part,
A second wiring conductor formed on a first main surface of the first insulating block;
A third wiring conductor formed on the first main surface of the first insulating block insulated from the second wiring conductor and extending on the second main surface continuous with the first main surface;
A fourth wiring conductor formed on a first main surface of the second insulating block and extending on the second main surface continuous with the first main surface;
An optical element carrier comprising: 前記光素子は、前記金属製支持体上に固着されたバイパスコンデンサを介して前記第４配線導体と電気的に接続されることを特徴とする請求項５記載の光素子キャリア。The optical element carrier according to claim 5, wherein the optical element is electrically connected to the fourth wiring conductor via a bypass capacitor fixed on the metal support. 金属製支持基板とこの金属製支持基板上に設けられた回路基板とを有するパッケージと、
前記回路基板の接地用の配線層上に設けられたアンプＩＣと、
方形状の絶縁性支持体と、この絶縁性支持体の第１主面の中間部に互いに離間して形成され、少なくとも第１主面と連続する第２主面に延びる第１配線導体と、前記第１主面における前記第１配線導体間に、この第１配線導体と絶縁して形成された第２配線導体と、前記第２配線導体に隣接し、且つこの第２配線導体と絶縁して第１主面に形成され、前記第２主面まで延びる第３配線導体と、前記第１主面における前記絶縁性支持体端部と前記第１配線導体との間の少なくとも一方に、前記第１配線導体と絶縁して形成され、前記第２主面まで延びる第４配線導体と、前記第２配線導体上に固着され、前記第３及び第４配線導体と電気的に接続された光素子を有し、且つ前記パッケージに固着された光素子キャリアと、
を具備し、
前記光素子キャリアの第１配線導体と前記パッケージの接地用の配線層とが電気的に接続されていることを特徴とする光通信モジュール。A package having a metal support substrate and a circuit board provided on the metal support substrate,
An amplifier IC provided on a ground wiring layer of the circuit board;
A rectangular insulative support, a first wiring conductor formed at an intermediate portion of the first main surface of the insulative support and spaced apart from each other, and extending to at least a second main surface continuous with the first main surface; A second wiring conductor formed between the first wiring conductors on the first main surface and insulated from the first wiring conductor; and a second wiring conductor adjacent to the second wiring conductor and insulated from the second wiring conductor. A third wiring conductor formed on the first main surface and extending to the second main surface, and at least one between the end of the insulating support and the first wiring conductor on the first main surface, A fourth wiring conductor formed insulated from the first wiring conductor and extending to the second main surface; and a light fixed on the second wiring conductor and electrically connected to the third and fourth wiring conductors. An optical element carrier having an element and fixed to the package;
With
An optical communication module, wherein a first wiring conductor of the optical element carrier and a wiring layer for grounding of the package are electrically connected. 金属製支持基板とこの金属製支持基板上に設けられた回路基板とを有するパッケージと、
前記回路基板の接地用の配線層上に設けられたアンプＩＣと、
金属製支持体と、前記金属製支持体の第１主面と連続する第２主面の中間部に、その第１主面が前記金属製支持体の第１主面側に、その第２主面が前記金属製支持体の第２主面側に、それぞれ露呈するように埋込まれた第１絶縁性ブロックと、
前記金属製支持体の第１主面と連続する第２主面の少なくとも一方の端部に、その第１主面が前記金属製支持体の第１主面側に、その第２主面が前記金属製支持体の第２主面側に、それぞれ露呈するように埋込まれた第２絶縁性ブロックと、前記第１絶縁性ブロックと第２絶縁性ブロック間に形成されている金属製支持体部分からなる第１配線導体と、前記第１絶縁性ブロックの第１主面に形成された第２配線導体と、前記第２配線導体と絶縁して前記第１絶縁性ブロックの第１主面に形成され、この第１主面と連続する前記第２主面に延びる第３配線導体と、前記第２絶縁性ブロックの第１主面に形成され、この第１主面と連続する前記第２主面に延びる第４配線導体と、前記第２配線導体上に固着され、前記第３及び第４配線導体と電気的に接続される光素子を有し、前記パッケージに固着された光素子キャリアと、
を具備し、
前記光素子キャリアの前記第１、第３、及び第４配線導体と前記パッケージの各配線層が、それぞれ電気的に接続されていることを特徴とする光通信モジュール。A package having a metal support substrate and a circuit board provided on the metal support substrate,
An amplifier IC provided on a ground wiring layer of the circuit board;
A metal support, an intermediate portion of a second main surface continuous with the first main surface of the metal support, a first main surface of the metal support on a first main surface side of the metal support, and a second main surface of the metal support; A first insulating block whose main surface is embedded on the second main surface side of the metal support so as to be exposed,
At least one end of a second main surface continuous with the first main surface of the metal support, the first main surface is on the first main surface side of the metal support, and the second main surface is A second insulating block embedded so as to be exposed on the second main surface side of the metal support; and a metal support formed between the first insulating block and the second insulating block. A first wiring conductor composed of a body part, a second wiring conductor formed on a first main surface of the first insulating block, and a first main wiring of the first insulating block insulated from the second wiring conductor. A third wiring conductor formed on the surface and extending to the second main surface continuous with the first main surface; and a third wiring conductor formed on the first main surface of the second insulating block and continuous with the first main surface. A fourth wiring conductor extending to the second main surface; and a fourth wiring conductor fixed to the second wiring conductor and electrically connected to the third and fourth wiring conductors. And the optical element carrier having an optical element, which is fixed to the package to be connected to,
With
An optical communication module, wherein the first, third, and fourth wiring conductors of the optical element carrier and each wiring layer of the package are electrically connected to each other. 前記パッケージの金属製支持基板の一側端部に切欠部が設けられ、
この切欠部に前記光素子キャリアが装着固定されていることを特徴とする請求項７または８記載の光通信モジュール。A notch is provided at one end of the metal supporting substrate of the package,
9. The optical communication module according to claim 7, wherein the optical element carrier is mounted and fixed in the notch. 前記光素子キャリアの第２主面を前記パッケージ側に向けて載置し、且つ前記第１、第３、及び第４配線導体が前記パッケージの各配線層に直接接続されていることを特徴とする請求項７または８記載の光通信モジュール。A second main surface of the optical element carrier is placed facing the package, and the first, third, and fourth wiring conductors are directly connected to respective wiring layers of the package. The optical communication module according to claim 7 or 8, wherein
JP2002290942A 2002-10-03 2002-10-03 Optical communication module and optical element carrier used therefor Pending JP2004128250A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027507A (en) * 2005-07-19 2007-02-01 Sony Corp Optical module
JP2011187508A (en) * 2010-03-04 2011-09-22 Sumitomo Electric Ind Ltd Optical receiver device
WO2012121422A1 (en) * 2011-03-10 2012-09-13 日本電気株式会社 Photodiode carrier and photosensor using same
JP2013005014A (en) * 2011-06-13 2013-01-07 Nippon Telegr & Teleph Corp <Ntt> Optical receiving circuit
JP2016018799A (en) * 2014-07-04 2016-02-01 日本電信電話株式会社 Optical receiving circuit and optical receiver
JP2017073691A (en) * 2015-10-08 2017-04-13 日本電信電話株式会社 Optical receiving circuit and optical receiving module

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027507A (en) * 2005-07-19 2007-02-01 Sony Corp Optical module
JP2011187508A (en) * 2010-03-04 2011-09-22 Sumitomo Electric Ind Ltd Optical receiver device
US9163982B2 (en) 2010-03-04 2015-10-20 Sumitomo Electric Industries, Ltd. Optical receiver device
WO2012121422A1 (en) * 2011-03-10 2012-09-13 日本電気株式会社 Photodiode carrier and photosensor using same
CN103415930A (en) * 2011-03-10 2013-11-27 日本电气株式会社 Photodiode carrier and photosensor using same
JP5644936B2 (en) * 2011-03-10 2014-12-24 日本電気株式会社 Photodiode carrier and photosensor using the same
US9013020B2 (en) 2011-03-10 2015-04-21 Nec Corporation Photodiode carrier and photo sensor using the same
JP2013005014A (en) * 2011-06-13 2013-01-07 Nippon Telegr & Teleph Corp <Ntt> Optical receiving circuit
JP2016018799A (en) * 2014-07-04 2016-02-01 日本電信電話株式会社 Optical receiving circuit and optical receiver
JP2017073691A (en) * 2015-10-08 2017-04-13 日本電信電話株式会社 Optical receiving circuit and optical receiving module

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