JP2004103942A - Electronic beam surface aligner and surface exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic beam surface aligner and a surface exposure method of a low cost, high resolution and high throughput, which can be miniaturized in a simple structure. <P>SOLUTION: A plane electronic beam is emitted passing through a second electrode from the entire surface of a porous layer of a semiconductor cold electronic emitter by applying a prescribed voltage for a prescribed time between a first electrode and the second electrode of the semiconductor cold electronic emitter. The plane electronic beam emitted from the entire surface of the porous layer passing through the second electrode is directed to the surface of a working substrate mounted on a processing stage and the working substrate is exposed by transferring a pattern without changing the size corresponding to a patterned absorption material at once . <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an electron beam surface exposure apparatus and a surface exposure method for irradiating a processing target substrate with a planar electron beam, transferring a pattern onto the processing target substrate at once, and performing surface exposure.
[0002]
[Prior art]
It is said that ultra-high-resolution microfabrication of 100 nm or less is difficult in optical lithography technology. However, there is currently no exposure apparatus capable of performing fine processing with a resolution of 100 nm or less and mass-producing.
[0003]
Therefore, development competition of such an exposure apparatus is being conducted all over the world. Among them, an EB (electron beam) projection exposure apparatus is regarded as promising. There are three exposure methods in this EB projection exposure apparatus: a SCALPEL method, a PREVAIL method, and a LEEPL method.
[0004]
The SCALPEL system and the PREVAIL system are systems in which an electron beam is transmitted and scattered by a membrane mask and a stencil mask, and is reduced and projected on a wafer by ４.
[0005]
The configuration of an EB projection exposure apparatus employing these methods is almost the same in that it includes an electron gun, a converging / projecting lens system, a mask (reticle) stage, a wafer stage, a deflector, and the like. Therefore, since the mask is present between the electron beam source and the wafer, the accuracy, thermal deformation, and contamination of the mask are the biggest problems, and the correction electron optical system becomes complicated. There is difficulty. In addition, since both are scanning exposures using a point-like electron beam, there is a problem in that the throughput is low with respect to surface exposure photolithography.
[0006]
On the other hand, the LEEPL method is a method of transferring a pattern at the same size using a stencil mask of the same size.
[0007]
However, the configuration of the EB projection exposure apparatus that employs the same method has an electron gun, a lens, a main deflector, a sub deflector, etc. as a projection system, and the accuracy of the correction system, thermal distortion and contamination of the mask are problematic. And the low throughput are the same as those of the EB projection exposure apparatus adopting the SCALPEL system or the PREVAIL system.
[0008]
In addition to the EB projection exposure apparatus, an exposure apparatus using EUV (extreme ultraviolet light) or X-ray has been developed.
[0009]
However, there is a problem that the configuration of these devices is very complicated and huge, and the price is very expensive.
[0010]
Conventionally, mass-produced products such as DRAMs (Dynamic Random Access Memory) and microprocessors have been mainly used, so that even if the cost of the exposure apparatus was somewhat high, there was no problem. On the other hand, at present, not only mass-produced products but also small-quantity multi-product products such as system LSIs are required. In the case of a small-quantity multi-product type, an expensive exposure apparatus as in the past requires a high product cost. Therefore, a small and inexpensive exposure apparatus with high resolution and high throughput is required.
[0011]
[Problems to be solved by the invention]
SUMMARY OF THE INVENTION An object of the present invention is to provide an electron beam surface exposure apparatus and a surface exposure method which solve the problems based on the prior art, can be reduced in size with a simple structure, are inexpensive, and have high resolution and high throughput. Is to do.
[0012]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a semiconductor substrate, a porous layer formed by anodizing a surface of the semiconductor substrate, a first electrode formed on a back surface of the semiconductor substrate, and the porous layer. A second electrode formed on the surface of the porous layer, a predetermined voltage is applied between the first electrode and the second electrode for a predetermined fixed time, so that the second electrode is formed from the entire surface of the porous layer. A semiconductor cold electron-emitting device that emits a planar electron beam through two electrodes;
An extraction power source for applying the predetermined voltage between a first electrode and a second electrode of the semiconductor cold electron emission element;
An absorption pattern formed on the second electrode of the semiconductor cold electron emission element and patterned to absorb a part of a planar electron beam transmitted through the second electrode and emitted from the entire surface of the porous layer. Materials and
The semiconductor cold electron emission element is disposed in parallel with a position facing the second electrode, and when exposing the processing target substrate, the processing target substrate is placed, and the entire surface of the porous layer of the semiconductor cold electron emission element is exposed. A processing stage to which a predetermined voltage is applied to capture a planar electron beam emitted from the second electrode through the second electrode;
An electronic device, comprising: a vacuum chamber that houses the semiconductor cold electron emission element, the absorber, and the processing stage, and has a vacuum chamber with a predetermined vacuum degree when exposing the processing target substrate. A beam plane exposure apparatus is provided.
[0013]
Here, in the above-mentioned electron beam surface exposure apparatus, a predetermined electron beam for accelerating a planar electron beam transmitted through the second electrode and emitted from the entire surface of the porous layer of the semiconductor cold electron emission element. It is preferable to provide an acceleration power supply for applying a constant voltage to the first electrode.
[0014]
Further, in the electron beam surface exposure apparatus described above, further, a convergent magnetic field for preventing diffusion of a planar electron beam transmitted through the second electrode and emitted from the entire surface of the porous layer of the semiconductor cold electron emission element. Alternatively, it is preferable to provide a means for generating a focused electric field.
[0015]
Further, in the electron beam surface exposure apparatus described above, further, when exposing the processing target substrate, the semiconductor cold electron emission element and the processing target substrate may have a temperature substantially equal to each other in the vacuum chamber. It is preferable to provide a means for controlling the temperature of the air.
[0016]
Preferably, the substrate to be processed is a semiconductor wafer.
[0017]
Further, the present invention, when using the electron beam surface exposure apparatus described above, when exposing the substrate to be processed,
Setting the inside of the vacuum chamber to a vacuum atmosphere of a predetermined degree of vacuum;
Applying a predetermined voltage to the processing stage to capture a planar electron beam transmitted through the second electrode and emitted from the entire surface of the porous layer of the semiconductor cold electron emission element;
A predetermined voltage is applied for a predetermined period of time between a first electrode and a second electrode of the semiconductor cold electron emission element, and the surface electron beam passes through the second electrode from the entire surface of the porous layer. Releasing the
Accelerating the planar electron beam emitted from the entire surface of the porous layer of the semiconductor cold electron emission element through the second electrode by an acceleration voltage applied between the first electrode and the processing stage; Irradiating the surface of the substrate to be processed placed on the processing stage, and exposing the substrate to be processed by collectively transferring a pattern corresponding to the patterned absorbing material at the same size. An electron beam surface exposure method is provided.
[0018]
Here, by using the semiconductor cold electron-emitting devices smaller in size than the substrate to be processed, the semiconductor cold electron-emitting devices and the substrate to be processed are relatively moved in a step-and-repeat manner, and the patterning is performed. It is preferable that the patterns corresponding to the absorbers are sequentially transferred at the same size at once and the pattern corresponding to the patterned absorbers is repeatedly exposed on the substrate to be processed.
[0019]
Further, according to the thickness of the patterned absorber, the transmittance of the planar electron beam passing through the patterned absorber is changed, and the patterned absorber is formed on the processing target substrate. It is preferable to expose a three-dimensional pattern corresponding to the thickness of the substrate.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an electron beam surface exposure apparatus and a surface exposure method of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
[0021]
FIG. 1 is a schematic configuration diagram of an embodiment of an electron beam surface exposure apparatus according to the present invention. As shown in this figure, an electron beam surface exposure apparatus 10 of the present embodiment includes a patterned BSE electron source (Ballistic Surface-Emission Electron Source: ballistic surface emission type cold cathode electron source) 12, a processing stage 14, and a drawer. A power supply 16, an acceleration power supply 18, a vacuum chamber 20, and an ammeter 22 are provided. FIG. 2 also shows a processing target substrate 24.
[0022]
In the electron beam surface exposure apparatus 10, the patterned BSE electron source 12 includes a planar electron beam source 26, an Au (gold) electrode 28, an Al (aluminum) electrode 30, and an absorber 32.
[0023]
The planar electron beam source 26 has an n-type silicon substrate 34, a polysilicon layer 36 formed on the entire surface (lower surface in the figure) of the silicon substrate 34, and anodizing the surface of the polysilicon layer 36. And a porous polysilicon layer 38 formed.
[0024]
The Al electrode 30 is formed on the entire back surface (upper surface in the drawing) of the silicon substrate 34 of the planar electron beam source 26, and the Au electrode 28 is formed on the outer surface of the surface (lower surface in the drawing) of the porous polysilicon layer 38. It is formed so as to cover almost the entire surface except for the above.
[0025]
On the surface of the Au electrode 28, a patterned absorber 32 is formed. The absorber 32 plays a role of absorbing a planar electron beam emitted from the entire surface of the porous polysilicon layer 38. In the case of the present embodiment, the absorber 32 is made of an EB resist (a material exposed by irradiating an electron beam), and is directly scanned without a mask by a point electron beam using a point electron beam drawing apparatus or the like. It is exposed and patterned.
[0026]
Here, a diode composed of the planar electron beam source 26, the Au electrode 28 and the Al electrode 30 is a semiconductor cold electron emission proposed in Japanese Patent Application Laid-Open No. 8-250766 by one of the present inventors, Nobuyoshi Koshida. Element. By applying a predetermined voltage for a predetermined period between the Au electrode 28 and the Al electrode 30 of the semiconductor cold electron emission device, the ballistic electrons are emitted from the entire surface of the porous polysilicon layer 38 by multi-tunnel conduction. Is started.
[0027]
The electron beam plane exposure apparatus 10 uses this semiconductor cold electron emission element as an electron beam source of the electron beam plane exposure apparatus 10, and has the following features.
[0028]
A) An electron source that can be formed in a planar type on a single crystal silicon substrate, and can emit an electron beam vertically from the emission surface of the electron beam (that is, the surface of the Au electrode 28 where the absorbing material 32 does not exist). It is possible to collectively transfer the pattern onto the substrate 24 to be processed without requiring a converging magnetic field.
B) A stable electron emission operation is possible in a low vacuum atmosphere of 1 to 30 Pa.
C) Uniformity of electron emission is high, and there is no short-term fluctuation such as hopping.
D) The electron emission source is one of the silicon microcrystals of the porous polysilicon layer 38 and has a uniform particle diameter of 2 to 3 nm. can get.
E) It has electron emission on / off characteristics on the order of microseconds (μs).
F) A wide area electron source having a diameter of 100, 150, 200, 300 mm or the like can be formed at low cost.
[0029]
The extraction power supply 16 is connected between the Au electrode 28 and the Al electrode 30 via a switch 40. The extraction power supply 16 is positive on the Au electrode 28 side and negative on the Al electrode 30 side. An acceleration power supply 18 is connected between the Al electrode 30 and the ground. The accelerating power supply 18 is positive on the ground side and negative on the Al electrode 30 side. In the present embodiment, the voltage Vps of the extraction power supply 16 and the voltage Vw of the acceleration power supply 18 are variable.
[0030]
When a voltage Vps is applied by the extraction power supply 16, an electron beam is emitted from the entire surface of the porous polysilicon layer 38 of the planar electron beam source 26. Further, as the voltage Vps of the extraction power supply 16 is increased, the emission amount of the electron beam increases. When the voltage Vw is applied by the acceleration power supply 18, the electron beam emitted from the entire surface of the porous polysilicon layer 38 of the planar electron beam source 26 is accelerated. Further, as the voltage Vw of the acceleration power supply 18 is increased, the acceleration of the electron beam increases.
[0031]
The processing stage 14 is a table on which the substrate 24 to be processed is mounted, and is connected to the ground in the present embodiment, as will be described later, and emits an electron beam from the patterned BSE electron source 12 (cathode). ) Functions as an anode for capturing a planar electron beam emitted from the substrate. The processing stage 14 is disposed in parallel with a position close to the surface (the lower surface in the figure) of the Au electrode 28 of the patterned BSE electron source 12.
[0032]
An EB resist 42 is formed on the entire surface of the processing target substrate 24. The EB resist 42 is exposed (exposed) by irradiating an electron beam, and in the case of the present embodiment, a pattern that is substantially the same as the pattern of the absorber 32 is collectively transferred at the same magnification.
[0033]
The patterned BSE electron source 12, the processing stage 14, and the processing target substrate 24 are housed inside a vacuum chamber 20. The inside of the vacuum chamber 20 is made a vacuum atmosphere when the processing target substrate 24 is subjected to the exposure processing.
[0034]
The ammeter 22 is arranged outside the vacuum chamber 20 and is connected between the processing stage 14 and the ground. That is, the processing stage 14 and the processing target substrate 24 are connected to the ground via the ammeter 22. Thus, the processing stage 14 (that is, the processing target substrate 24) functions as an anode for capturing the planar electron beam as described above. The ammeter 22 measures the total amount of current of the electron beam emitted from the patterned BSE electron source 12.
[0035]
The exposure amount by the electron beam for exposing the EB resist 42 is calculated by integrating the emission amount per unit time of the electron beam determined by the voltage Vps of the extraction power supply 16 and the irradiation time. Therefore, by measuring the irradiation amount (current amount) of the electron beam per unit time using the ammeter 22, the exposure amount necessary for exposing the EB resist 42, that is, the voltage Vps of the extraction power supply 16 is obtained. Irradiation time can be determined.
[0036]
Next, the operation of the electron beam surface exposure apparatus 10 according to the electron beam surface exposure method of the present invention will be described.
[0037]
The inside of the vacuum chamber 20 is set to a vacuum atmosphere of 1 to 30 Pa. Further, a voltage Vw of −2 to 5 kV is constantly applied to the Al electrode 30 of the patterned BSE electron source 12 by the acceleration power supply 18. The voltage Vps of the extraction power supply 16 is several tens of volts in this embodiment. When the switch 40 is turned on, the voltage Vps supplied from the extraction power supply 16 is applied between the Au electrode 28 and the Al electrode 30, and is not applied when the switch 40 is turned off.
[0038]
In the above state, the switch 40 is turned on, and a voltage Vps of several tens of volts is applied between the Au electrode 28 and the Al electrode 30 of the patterned BSE electron source 12 by the extraction power supply 16 for a predetermined predetermined time. An electron beam is emitted from the entire surface of the porous polysilicon layer 38 of the planar electron beam source 26. The planar electron beam emitted from the porous polysilicon layer 38 passes through the Au electrode 28 and is emitted from the entire surface of the Au electrode 28.
[0039]
At this time, the electron beam at the portion where the patterned absorber 32 exists is absorbed by the absorber 32, and the electron beam is emitted only from the portion where the absorber 32 does not exist. Thereby, the patterned BSE electron source 12 emits a planar electron beam patterned by the absorber 32 in a direction perpendicular to the emission surface. The planar electron beam emitted from the patterned BSE electron source 12 is accelerated by the voltage Vw of the acceleration power supply 18.
[0040]
The processing target substrate 24 is arranged at a position close to the electron beam emission surface of the patterned BSE electron source 12. Therefore, the planar electron beam emitted and accelerated vertically from the emission surface is irradiated perpendicularly to the surface of the EB resist 42 formed on the processing target substrate 24 with almost no angular dispersion. As a result, a pattern that is substantially the same as the patterned absorber 32 is collectively transferred to the EB resist 42 formed on the processing target substrate 24 at the same size.
[0041]
The electron beam plane exposure apparatus 10 is capable of performing ultra-high resolution fine exposure of 100 nm or less using an electron beam. In addition, since the exposure is the same-magnification, it is maskless and does not require a projection system, a convergence system, a deflection system, and the like, the structure is simple and the size can be reduced. Further, since the structure is very simple, the device can be configured at a much lower cost than in the past. Further, since the batch exposure is performed by using a planar electron beam, there is a feature that the throughput is much higher than that of a point electron beam.
[0042]
The following are examples of applications of the present invention. However, the use of the present invention is not limited to the following examples, and can be used for various uses such as exposure, drawing, and processing.
[0043]
A) Fully customized system LSI (large-scale integrated circuit) for digital information home appliances, network information home appliances, etc., which meets the requirements of ultra-miniaturization, high integration, and high speed up to several generations ahead and supports resolutions of 100 to 50 nm. Production of.
B) Mass production of dozens to hundreds of different-period diffraction gratings used in DFB semiconductor lasers as light sources for wavelength division multiplexed light transmission (WDM) in the broadband era.
C) Production of optical components other than semiconductors and microelectronic equipment systems, such as standard disks for next-generation DVDs, graduation slits of rotary encoders, etc.
[0044]
The substrate of the planar electron beam source 26 may be n-type or p-type, or may be a substrate made of a material other than single-crystal silicon, such as glass or quartz. In the above embodiment, the porous polysilicon layer 38 is made porous by anodizing the surface of the polysilicon layer 36, but may be made porous by other methods. The Au electrode 28 and the Al electrode 30 may be made of any material as long as it is a conductive electrode.
[0045]
The semiconductor cold electron-emitting device having a size smaller than the processing target substrate 24 is used, and the semiconductor cold electron-emitting device and the processing target substrate 24 are relatively moved in a step-and-repeat manner, and correspond to the patterned absorber 32. The pattern corresponding to the absorber 32 patterned on the processing target substrate 24 may be repeatedly exposed by sequentially transferring the pattern to be processed at the same size at once, or a semiconductor cold electron emission element having substantially the same size as the processing target substrate 24 may be used. Exposure may be performed by fixing the relative positional relationship between the two.
[0046]
The size of the semiconductor cold electron emission element and the substrate to be processed 24 are not limited at all. The semiconductor cold electron-emitting device may be of a small size such as a semiconductor chip, for example, or a semiconductor chip-sized semiconductor cold electron-emitting device may be used to repeatedly transfer the same or a different pattern onto a semiconductor wafer at the same magnification. It is also possible to configure a semiconductor cold electron emission element having a size of a semiconductor wafer. If a semiconductor cold electron emission device having a size of a semiconductor wafer is used, a semiconductor wafer to be processed can be transferred at once and exposed at the same size.
[0047]
As the absorbing material 32, any material that can absorb the electron beam can be used. Further, the method of patterning the absorber 32 is not limited at all. For example, when the resolution is 100 nm or more, the patterning may be performed by using an optical lithography technique. Also, in the case where the absorber 32 is directly subjected to scanning exposure, the resist applied on the absorber 32 may be patterned, and then the absorber 32 may be patterned using the patterned resist as a mask.
[0048]
In the above embodiment, the absorbing material 32 has a thickness that can completely absorb (block) the electron beam. On the other hand, the thickness of the absorber 32 may be partially changed. Thereby, the transmittance of the electron beam to the absorber 32 can be partially changed. As described above, the transmittance of the planar electron beam that passes through the absorber 32 is changed according to the thickness of the absorber 32, and the transmittance corresponding to the thickness of the absorber 32 patterned on the processing target substrate 24 is changed. It is also possible to expose a dimensional pattern.
[0049]
The voltage Vps of the extraction power supply 16 and the voltage Vw of the acceleration power supply 18 may be variable or fixed. The voltage Vps of the extraction power supply 16 may be selected according to the characteristics of the semiconductor cold electron emission device. It is preferable that the voltage Vw of the acceleration power supply 18 be appropriately selected according to the type and thickness of the EB resist 42, the material of the substrate 24 to be processed, and the like. The accelerating power supply 18 is not an essential component, but is preferably provided as needed.
[0050]
The degree of vacuum in the vacuum chamber 20 is sufficient to be 1 to 30 Pa in consideration of the characteristics of the patterned BSE electron source 12, but is not limited to a value in this range. Further, in order to prevent diffusion of the electron beam due to collision with gas molecules, it is preferable to evacuate using a turbo molecular pump. The EB resist 42 may be either a positive type or a negative type. The ammeter 22 is not an essential element after determining the irradiation time of the electron beam, but it is preferable to include the ammeter 22 in order to monitor the irradiation amount of the electron beam.
[0051]
Further, a mechanism for relatively moving the patterned BSE electron source 12 and the processing stage 14 in three directions of XYZ may be provided. Also, when drawing ultrafine quantum wires or the like, or when the distance between the porous polysilicon layer 38 of the patterned BSE electron source 12 and the surface of the EB resist 42 formed on the processing target substrate 24 is large, etc. It is preferable to provide a means for generating a converging magnetic field or a converging electric field for preventing the diffusion of the electron beam, if necessary. In addition, it is preferable to provide a means for controlling the temperature in the vacuum chamber 20 so that the temperature of the semiconductor cold electron emission element and the substrate to be processed 24 are substantially the same when the substrate 24 to be processed is exposed.
[0052]
The present invention is basically as described above.
As described above, the electron beam surface exposure apparatus and the surface exposure method of the present invention have been described in detail. However, the present invention is not limited to the above embodiment, and various improvements and changes are made without departing from the gist of the present invention. Of course it is good.
[0053]
【The invention's effect】
As described in detail above, the present invention applies a predetermined voltage for a predetermined period of time between the first electrode and the second electrode of the semiconductor cold electron-emitting device and The surface electron beam is emitted from the entire surface of the porous layer through the second electrode, and the surface electron beam emitted from the entire surface of the porous layer through the second electrode is placed on a processing stage. Irradiation is performed on the surface of the processing target substrate to transfer the pattern corresponding to the patterned absorbent material at once to the processing target substrate.
Thus, according to the present invention, since the substrate to be processed is exposed using the electron beam, ultra-high resolution fine exposure of 100 nm or less is possible. In addition, since the exposure is the same magnification, it is maskless, and a projection system, a converging diameter, a deflection system, and the like are not required. Further, since the structure is very simple, the device can be configured at a much lower cost than in the past. Further, since the batch exposure is performed using the planar electron beam, an effect that the throughput is extremely higher than that of the point electron beam can be obtained.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of an embodiment of an electron beam surface exposure apparatus of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Electron beam surface exposure apparatus 12 Patterned BSE electron source 14 Processing stage 16 Extraction power supply 18 Acceleration power supply 20 Vacuum chamber 22 Ammeter 24 Substrate to be processed 26 Planar electron beam source 28 Au electrode 30 Al electrode 32 Absorbent material 34 Silicon substrate 36 Polysilicon layer 38 Porous polysilicon layer 40 Switch 42 EB resist

Claims (8)

A semiconductor substrate, a porous layer formed by anodizing the surface of the semiconductor substrate, a first electrode formed on the back surface of the semiconductor substrate, and a second electrode formed on the surface of the porous layer. By applying a predetermined voltage between the first electrode and the second electrode for a predetermined period of time, a surface electron beam is emitted from the entire surface of the porous layer through the second electrode. A semiconductor cold electron-emitting device,
An extraction power supply for applying the predetermined voltage between a first electrode and a second electrode of the semiconductor cold electron emission element;
An absorption pattern formed on the second electrode of the semiconductor cold electron emission element and patterned to absorb a part of a planar electron beam transmitted through the second electrode and emitted from the entire surface of the porous layer. Materials and
The semiconductor cold electron emission element is disposed in parallel with a position facing the second electrode, and when exposing the processing target substrate, the processing target substrate is placed, and the entire surface of the porous layer of the semiconductor cold electron emission element is exposed. A processing stage to which a predetermined voltage is applied to capture a planar electron beam emitted from the second electrode through the second electrode;
An electronic device, comprising: a vacuum chamber that houses the semiconductor cold electron emission element, the absorber, and the processing stage, and has a vacuum chamber with a predetermined vacuum degree when exposing the processing target substrate. Beam surface exposure equipment. 2. The electron beam plane exposure apparatus according to claim 1, further comprising: a predetermined electron beam for accelerating a plane electron beam emitted through the second electrode from the entire surface of the porous layer of the semiconductor cold electron emission element. An electron beam surface exposure apparatus including an acceleration power supply for applying a constant voltage to the first electrode. 3. The electron beam surface exposure apparatus according to claim 1, further comprising preventing diffusion of a planar electron beam transmitted through the second electrode from the entire surface of the porous layer of the semiconductor cold electron emission element. An electron beam surface exposure apparatus comprising means for generating a convergent magnetic field or a convergent electric field. The electron beam surface exposure apparatus according to any one of claims 1 to 3, further comprising: when exposing the substrate to be processed, so that the temperatures of the semiconductor cold electron emission element and the substrate to be processed are substantially the same. An electron beam surface exposure apparatus comprising: means for controlling a temperature in the vacuum chamber. The electron beam surface exposure apparatus according to claim 1, wherein the substrate to be processed is a semiconductor wafer. When exposing the processing target substrate using the electron beam surface exposure apparatus according to any one of claims 1 to 5,
Setting the inside of the vacuum chamber to a vacuum atmosphere of a predetermined degree of vacuum;
Applying a predetermined voltage to the processing stage to capture a planar electron beam transmitted through the second electrode and emitted from the entire surface of the porous layer of the semiconductor cold electron emission element;
A predetermined voltage is applied for a predetermined period of time between a first electrode and a second electrode of the semiconductor cold electron emission element, and the surface electron beam passes through the second electrode from the entire surface of the porous layer. Releasing the
Accelerating the planar electron beam emitted from the entire surface of the porous layer of the semiconductor cold electron emission element through the second electrode by an acceleration voltage applied between the first electrode and the processing stage; Irradiating the surface of the substrate to be processed placed on the processing stage, and exposing the substrate to be processed by collectively transferring a pattern corresponding to the patterned absorbing material at the same size. Characteristic electron beam surface exposure method. Using the semiconductor cold electron-emitting devices smaller in size than the substrate to be processed, while moving these semiconductor cold-electron emitting devices and the substrate to be processed relatively in a step-and-repeat manner, the patterned absorber is used. 7. The electron beam surface exposure method according to claim 6, wherein a pattern corresponding to the pattern is sequentially transferred at the same magnification, and a pattern corresponding to the patterned absorber is repeatedly exposed on the processing target substrate. According to the thickness of the patterned absorber, the transmittance of the planar electron beam transmitting through the patterned absorber is changed, and the thickness of the patterned absorber on the processing target substrate is changed. 8. The electron beam surface exposure method according to claim 6, wherein a corresponding three-dimensional pattern is exposed.

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