JP2004096106A - Base pattern formation material for absorbing electrode/wiring material, electrode/wiring forming method, and manufacturing method of image forming apparatus - Google Patents

Base pattern formation material for absorbing electrode/wiring material, electrode/wiring forming method, and manufacturing method of image forming apparatus Download PDF

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JP2004096106A
JP2004096106A JP2003285853A JP2003285853A JP2004096106A JP 2004096106 A JP2004096106 A JP 2004096106A JP 2003285853 A JP2003285853 A JP 2003285853A JP 2003285853 A JP2003285853 A JP 2003285853A JP 2004096106 A JP2004096106 A JP 2004096106A
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electrode
wiring
water
base pattern
forming
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JP4262027B2 (en
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Kazuhiro Kagami
鏡 一宏
Takashi Furuse
古瀬 剛史
Yoshimasa Mori
森 省誠
Masahiro Terada
寺田 匡宏
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Canon Inc
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Canon Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To use an aqueous solution of which the handling is easy and the load to an environment is small to easily form an adhesive fine electrode or wiring pattern, thereby improving the stability of a process when used for the manufacturing process of an image forming device. <P>SOLUTION: A base pattern is formed by using a base pattern forming material for absorbing an electrode/wiring material which is a aqueous solution containing a water-soluble metal compound comprising a water-soluble photosensitive resin component, rhodium, bismuth, ruthenium, vanadium, chromium, tin, copper or silicon, and an electrode and wiring are formed by absorbing an organic metal compound into the base pattern and by sintering the same. <P>COPYRIGHT: (C)2004,JPO

Description

 本発明は、電極や配線の形成に用いられる電極・配線材料吸収用下地パターン形成材料、この電極・配線材料吸収用下地パターン形成材料を用いた電極・配線形成方法及びこの電極・配線形成方法を用いた画像形成装置の製造方法に関する。 The present invention relates to an electrode / wiring material absorbing base pattern forming material used for forming electrodes and wiring, an electrode / wiring forming method using the electrode / wiring material absorbing base pattern forming material, and an electrode / wiring forming method. The present invention relates to a method for manufacturing an image forming apparatus used.

 従来、基板上に電極や配線を形成する方法としては、(1)スクリーン印刷法を用いて導電性材料を含有するペーストを基板上に塗布し、乾燥・焼成して形成する方法(例えば、特許文献1参照)、(2)転写による方法(例えば、特許文献2参照)、(3)金属を含有する溶液を基板全面に塗布し、乾燥・焼成して金属膜を形成し、フォトレジストなどのマスクで所定の領域を覆い、マスクで覆われていない部分をエッチング除去して形成する方法、(4)金属含有ペーストに感光性材料を付与し、所望の箇所を露光した後現像して形成する方法(例えば、特許文献3、4参照)、(5)水溶性の感光性樹脂と水溶性の有機金属化合物と水系溶媒とを含む塗布材を用い、塗布、乾燥、露光、現像、焼成を経て形成する方法(例えば、特許文献5参照)などが知られている。 2. Description of the Related Art Conventionally, as a method of forming electrodes and wirings on a substrate, (1) a method of applying a paste containing a conductive material on a substrate by using a screen printing method, and drying and firing the paste (for example, Patent (2) Transfer method (for example, see Patent Document 2), (3) A metal-containing solution is applied to the entire surface of the substrate, dried and fired to form a metal film, and a photoresist or the like is formed. A method in which a predetermined region is covered with a mask and a portion not covered with the mask is removed by etching. (4) A photosensitive material is applied to a metal-containing paste, a desired portion is exposed, and then developed and formed. Method (for example, see Patent Documents 3 and 4), (5) using a coating material containing a water-soluble photosensitive resin, a water-soluble organic metal compound, and an aqueous solvent, coating, drying, exposing, developing, and firing. Method of forming (eg, patent Document 5 reference), and the like are known.

特開平8−185818号公報JP-A-8-185818 特開平8−236017号公報JP-A-8-236017 特開平5−114504号公報JP-A-5-114504 特開平8−176177号公報JP-A-8-176177 特開2001−297639号公報JP 20012977639 A

 しかしながら、前記(1)の方法は微細な電極や配線パターンには適用が困難であり、前記(2)の方法も膜厚の均一性・再現性が不十分である。前記(3)の方法は、特に電極や配線パターンを白金等の貴金属で構成する場合、エッチング時に強酸を用いなければならず、レジストが侵されたり絶縁性基板が腐食されるなどの理由から、微細な回路を形成させることが困難である。また、前記(4)の方法は、有機溶媒を用いるため、塗布・乾燥・焼成工程時に防爆設備が必要となったり、使用薬剤の取り扱いに注意が要求されるほか、現像時にも多量の塩素系有機溶媒を使用するため、環境負荷が大きい問題がある。 However, the method (1) is difficult to apply to fine electrodes and wiring patterns, and the method (2) also has insufficient film thickness uniformity and reproducibility. The method (3) requires the use of a strong acid at the time of etching, particularly when the electrodes and wiring patterns are made of a noble metal such as platinum, because the resist is attacked and the insulating substrate is corroded. It is difficult to form a fine circuit. In addition, since the method (4) uses an organic solvent, explosion-proof equipment is required during the coating, drying, and baking steps, and care must be taken in handling the chemicals used. Since an organic solvent is used, there is a problem of a large environmental load.

 一方、前記(5)の方法は、取り扱い容易で環境負荷の小さな水系溶媒を用いた水系溶液により、微細な電極や配線パターンを容易に形成できる利点があるが、現像工程において、未露光部の水溶性有機金属化合物を廃棄することになり、コストが高くなる問題がある。 On the other hand, the method (5) has an advantage that a fine electrode or a wiring pattern can be easily formed by an aqueous solution using an aqueous solvent that is easy to handle and has a small environmental load. There is a problem that the water-soluble organometallic compound is discarded and the cost increases.

 そこで本出願人は、水溶性の感光性樹脂で形成した樹脂パターンに有機金属化合物の水系溶液を吸収させた後、この有機金属化合物の水系溶液を吸収した樹脂パターンを焼成することで電極や配線を形成する方法を先に特開2003−031922号として提供した。 Therefore, the present applicant has made a resin pattern formed of a water-soluble photosensitive resin absorb an aqueous solution of an organometallic compound, and then sinters the resin pattern that has absorbed the aqueous solution of the organometallic compound to form electrodes and wiring. Was previously provided as JP-A-2003-031922.

 ところで、上記方法によると、微細な電極や配線パターンを、大きな環境負荷をかけることなく、容易かつ低コストで形成することができるが、基板との密着性が不足する場合がある。このため、上記方法を画像形成装置の電極や配線の形成に利用した場合、製造過程で超音波洗浄を施した際に時として電極や配線パターンの剥離を生じ、製造プロセスが不安定になる場合がある。 By the way, according to the above method, fine electrodes and wiring patterns can be formed easily and at low cost without imposing a large environmental load, but the adhesion to the substrate may be insufficient. For this reason, when the above method is used for forming electrodes and wirings of an image forming apparatus, when the ultrasonic cleaning is performed during the manufacturing process, the electrodes and wiring patterns sometimes peel off, and the manufacturing process becomes unstable. There is.

 本発明は、このような問題点に鑑みてなされたもので、取り扱いが容易で環境負荷の小さな水系溶液を用い、密着性のよい微細な電極や配線パターンを容易に形成できるようにし、もって画像形成装置の製造プロセスに用いた場合の当該プロセスの安定性を向上させることを目的とする。 The present invention has been made in view of such a problem, and uses an aqueous solution that is easy to handle and has a small environmental load, and enables easy formation of fine electrodes and wiring patterns with good adhesion, thereby improving image quality. An object of the present invention is to improve the stability of a forming apparatus when used in a manufacturing process.

 上記目的のために、本発明の第1は、水溶性の感光性樹脂成分と、水溶性の金属化合物とを含有する水系溶液であることを特徴とする電極・配線材料吸収用下地パターン形成材料を提供するものである。 To achieve the above object, a first aspect of the present invention is a base pattern forming material for absorbing an electrode / wiring material, which is an aqueous solution containing a water-soluble photosensitive resin component and a water-soluble metal compound. Is provided.

 また、本発明の第2は、基板上に下地パターンを形成する下地パターン形成工程と、該下地パターンに有機金属化合物を吸収させる吸収工程と、該有機金属化合物を吸収した下地パターンを焼成する焼成工程とを有し、前記下地パターン形成工程は、感光性樹脂成分と水溶性金属化合物とを含有する水溶性感光性樹脂を前記基板上に塗布する工程及び露光する工程からなることを特徴とする電極・配線形成方法を提供するものである。 A second aspect of the present invention is a base pattern forming step of forming a base pattern on a substrate, an absorption step of absorbing an organic metal compound in the base pattern, and a firing step of firing the base pattern having absorbed the organic metal compound. Wherein the underlayer pattern forming step comprises a step of applying a water-soluble photosensitive resin containing a photosensitive resin component and a water-soluble metal compound on the substrate, and a step of exposing. An object of the present invention is to provide an electrode / wiring forming method.

 更に本発明の第3は、複数の電子放出素子と、該電子放出素子から放出される電子線の照射により画像を形成する画像形成部材とを具備する画像形成装置の製造方法において、電極と配線のいずれか一方もしくは両者を上記本発明の第2の方法で形成することを特徴とする画像形成装置の製造方法を提供するものである。 According to a third aspect of the present invention, there is provided a method of manufacturing an image forming apparatus including a plurality of electron-emitting devices and an image-forming member for forming an image by irradiating an electron beam emitted from the electron-emitting devices. The present invention provides a method for manufacturing an image forming apparatus, characterized in that one or both of them are formed by the second method of the present invention.

 本発明は、次の効果を奏するものである。 The present invention has the following effects.

 (1)電極パターンの膜質の向上、密着性の更なる向上が可能になり、膜剥がれなどの不良がなくなり、低コストで電極や配線を形成することができる。 (1) It is possible to improve the film quality of the electrode pattern and further improve the adhesion, eliminate defects such as film peeling, and form electrodes and wirings at low cost.

 (2)目的としたパターン部分に選択的に有機金属化合物(好ましくは特定の配位子を有する金属錯体)を吸収できるため、材料の使用効率が格段に良くなる。 (2) Since an organic metal compound (preferably a metal complex having a specific ligand) can be selectively absorbed in a target pattern portion, the use efficiency of the material is significantly improved.

 (3)利用効率が良くなることで、低コストで電極・配線を形成することができる。 (3) The electrodes and wirings can be formed at low cost by improving the use efficiency.

 以下、本発明の第1に係る電極・配線材料吸収用下地パターン形成材料、本発明の第2に係る電極・配線形成方法、本発明の第3に係る画像形成装置の製造方法の順に更に説明する。 Hereinafter, the electrode / wiring material absorbing base pattern forming material according to the first embodiment of the present invention, the electrode / wiring forming method according to the second embodiment of the present invention, and the method for manufacturing an image forming apparatus according to the third embodiment of the present invention will be further described in this order. I do.

 (1)電極・配線材料吸収用下地パターン形成材料
 本発明の第1に係る電極・配線材料吸収用下地パターン形成材料(以下「下地材料」という)は、水溶性の感光性樹脂成分と、ロジウム、ビスマス、ルテニウム、バナジウム、クロム、錫、鉛またはケイ素を含む水溶性の金属化合物とを含有する水系溶液である。
(1) Electrode and Wiring Material Absorbing Underlayer Pattern Forming Material The electrode and wiring material absorbing underlayer pattern forming material according to the first aspect of the present invention (hereinafter referred to as “underlying material”) comprises a water-soluble photosensitive resin component and rhodium. And a water-soluble metal compound containing bismuth, ruthenium, vanadium, chromium, tin, lead or silicon.

 感光性樹脂成分としては、水溶性のものを広く用いることができるが、添加される水溶性の金属化合物と反応して沈殿の生成やゲル化を起こしにくいものを選択することが好ましい。 (4) As the photosensitive resin component, a water-soluble resin component can be widely used, but it is preferable to select a resin that does not easily react with the added water-soluble metal compound to form a precipitate or cause gelation.

 感光性樹脂成分としては、樹脂構造中に感光基を有するタイプのものであっても、例えば環化ゴム−ビスアジド系レジスト(cyclorubber−bisazide based photoresist)のように、樹脂に感光剤が混合されたタイプのものでもよい。いずれのタイプの感光性樹脂成分においても、光反応開始剤や光反応禁止剤を適宜混合しておくことができる。 As the photosensitive resin component, even if the photosensitive resin component has a photosensitive group in the resin structure, a photosensitive agent is mixed with the resin such as a cyclized rubber-bisazide-based resist (cyclorubber-bisazide-based-photoresist). It may be of the type. In any type of photosensitive resin component, a photoreaction initiator or a photoreaction inhibitor can be appropriately mixed.

 本発明で使用する感光性樹脂成分としては、良好な水溶性が得やすい点から、例えばポリビニルアルコール系樹脂やポリビニルピロリドン系樹脂などが好ましい。また、後述する水系溶媒へ溶解させて塗布乾燥後、現像液に可溶な塗膜が光照射によって現像液に不溶化するタイプ(ネガタイプ)であっても、現像液に不溶な塗膜が光照射によって現像液に可溶化するタイプ(ポジタイプ)であってもよい。 感光 As the photosensitive resin component used in the present invention, for example, a polyvinyl alcohol-based resin or a polyvinylpyrrolidone-based resin is preferable because good water solubility is easily obtained. Further, even if the coating film soluble in the developing solution is insolubilized in the developing solution by light irradiation after dissolving in a water-based solvent to be described later and then dried (negative type), the coating film insoluble in the developing solution is irradiated with light. (Positive type) solubilized in a developing solution.

 上記水溶性の感光性樹脂成分と共に含有される水溶性の金属化合物は、金属成分として、ロジウム、ビスマス、ルテニウム、バナジウム、クロム、錫、鉛またはケイ素を含むもので、後述する焼成によって形成される電極・配線パターンと基板間の密着性を向上させる働きをなす。この金属化合物としては、ロジウム、ビスマス、ルテニウム、バナジウム、クロム、錫、鉛またはケイ素を含む水溶性の金属塩、有機金属化合物、錯体を用いることができる。 The water-soluble metal compound contained together with the water-soluble photosensitive resin component contains rhodium, bismuth, ruthenium, vanadium, chromium, tin, lead or silicon as a metal component, and is formed by firing described below. It functions to improve the adhesion between the electrode / wiring pattern and the substrate. As the metal compound, a water-soluble metal salt containing rhodium, bismuth, ruthenium, vanadium, chromium, tin, lead or silicon, an organic metal compound, or a complex can be used.

 上記金属化合物の前記感光性樹脂成分に対する配合比率は、1.0重量%以上20重量%以下であることが好ましい。金属化合物の配合比率が大きすぎると、微細なパターンの電極・配線下地が得にくくなり、配合比率が小さすぎると得られる電極・配線パターンの十分な密着性の向上が得にくくなる。 (4) The mixing ratio of the metal compound to the photosensitive resin component is preferably 1.0% by weight or more and 20% by weight or less. If the compounding ratio of the metal compound is too large, it is difficult to obtain an electrode / wiring base having a fine pattern, and if the compounding ratio is too small, it is difficult to obtain sufficient adhesion of the obtained electrode / wiring pattern.

 本発明の第1に係る下地材料は、水系溶媒を用いた水系溶液である。ここで、水系溶媒とは、水を50重量%以上含有する溶媒をいう。水系溶媒は、50重量%未満の範囲で、例えば乾燥速度を速めるためにメチルアルコールやエチルアルコールなどの低級アルコールを加えたものとしたり、上述した感光性樹脂成分や金属化合物の溶解促進や安定性向上などを図るための成分を加えたものとすることができる。しかし、環境負荷を軽減する観点から、水の含有率が70重量%以上であることが好ましく、さらに好ましくは水の含有率が90重量%以上であり、総て水であることが最も好ましい。 下地 The base material according to the first aspect of the present invention is an aqueous solution using an aqueous solvent. Here, the aqueous solvent refers to a solvent containing 50% by weight or more of water. The aqueous solvent is used in an amount of less than 50% by weight, for example, a solvent in which a lower alcohol such as methyl alcohol or ethyl alcohol is added to increase the drying speed, or the dissolution promotion or stability of the above-mentioned photosensitive resin component or metal compound. A component for improving the composition can be added. However, from the viewpoint of reducing the environmental load, the water content is preferably 70% by weight or more, more preferably 90% by weight or more, and most preferably all water.

 本発明の第1に係る下地材料は、後述する下地パターン形成工程により形成される下地パターンが、後述する有機金属化合物の水系溶液を吸収できるものであって、特に有機金属化合物の水系溶液中の金属成分と反応し、イオン交換可能な下地パターンを形成できる感光性樹脂成分を含有するものが好ましい。このイオン交換性の下地パターンを形成することにより、後述する吸収工程をイオン交換性の吸収工程とすることができ、有機金属化合物成分中の金属成分の吸収を向上させ、材料の利用効率を高め、さらにはより形状の整った電極・配線パターンを形成することができる。イオン交換が可能な感光性樹脂成分としては、パターンの形状制御の点で特に好ましいことから、カルボン酸基を有するものが好ましい。 The underlayer material according to the first aspect of the present invention is such that the underlayer pattern formed in the underlayer pattern forming step described below can absorb an aqueous solution of an organometallic compound described below, Those containing a photosensitive resin component capable of forming an ion-exchangeable base pattern by reacting with a metal component are preferable. By forming this ion-exchange base pattern, the absorption step described later can be made into an ion-exchange absorption step, improving the absorption of the metal component in the organometallic compound component and increasing the material utilization efficiency. Further, an electrode / wiring pattern having a more uniform shape can be formed. As the ion-exchangeable photosensitive resin component, those having a carboxylic acid group are preferable because they are particularly preferable in terms of controlling the shape of the pattern.

 (2)電極・配線形成方法
 本発明の第2に係る電極・配線の形成方法は、以下の下地パターン形成工程(塗布工程、乾燥工程、露光工程、現像工程)、吸収工程、必要に応じて行われる洗浄工程、焼成工程を経て行うことができる。
(2) Method for forming electrodes and wirings The method for forming electrodes and wirings according to the second aspect of the present invention includes the following base pattern forming steps (coating step, drying step, exposure step, developing step), absorption step, and The cleaning process and the firing process can be performed.

 (2−1)塗布工程
 塗布工程は、電極および/または配線を形成すべき絶縁性の基板上に前述の下地材料を塗布する工程である。
(2-1) Coating Step The coating step is a step of coating the above-described base material on an insulating substrate on which electrodes and / or wirings are to be formed.

 下地材料の塗布は、各種印刷法(スクリーン印刷、オフセット印刷、フレキソ印刷など)、スピンナー法、ディッピング法、スプレー法、スタンプ法、ローリング法、スリットコーター法、インクジェット法などを用いて行うことができる。 The application of the base material can be performed using various printing methods (screen printing, offset printing, flexographic printing, etc.), spinner method, dipping method, spray method, stamp method, rolling method, slit coater method, inkjet method, and the like. .

 (2−2)乾燥工程
 乾燥工程は、上記塗布工程において基板上に塗布した下地材料に含まれる水系溶媒を揮発させて塗膜を乾燥する工程である。この塗膜の乾燥は、室温下で行うこともできるが、乾燥時間を短縮するために加熱下で行うことが好ましい。加熱乾燥は、例えば無風オーブン、乾燥機、ホットプレートなどを用いて行うことが、一般的には50〜100℃の温度下に1〜30分間置くことで行うことができる。
(2-2) Drying Step The drying step is a step of drying the coating film by volatilizing the aqueous solvent contained in the base material applied on the substrate in the coating step. Drying of the coating film can be performed at room temperature, but is preferably performed under heating in order to shorten the drying time. The heat drying can be performed using, for example, a windless oven, a drier, a hot plate, or the like, and can be generally performed by placing the film at a temperature of 50 to 100 ° C. for 1 to 30 minutes.

 (2−3)露光工程
 露光工程は、上記乾燥工程において乾燥された基板上の塗膜を、所定の電極および/または配線のパターンに沿って露光する工程である。
(2-3) Exposure Step The exposure step is a step of exposing the coating film on the substrate, which has been dried in the drying step, along a predetermined electrode and / or wiring pattern.

 この露光工程で光照射して露光する範囲は、使用する感光性樹脂がネガタイプであるかポジタイプであるかによって相違する。光照射によって現像液に不溶化するネガタイプの場合、電極および/または配線(電極と配線のいずれか一方もしくは両者)とすべき領域に光を照射して露光するが、光照射によって現像液に可溶化するポジタイプの場合、ネガタイプとは逆に、電極および/または配線とすべき領域以外の領域に光を照射して露光する。光照射領域と非照射領域の選択は、通常のフォトレジストによるマスク形成における手法と同様にして行うことができる。 範 囲 The range of exposure by light irradiation in this exposure step differs depending on whether the photosensitive resin used is a negative type or a positive type. In the case of a negative type which is insolubilized in a developing solution by light irradiation, light is irradiated to a region to be an electrode and / or a wiring (one or both of the electrode and the wiring) and exposed, but the light is solubilized in the developing solution. In the case of the positive type, contrary to the negative type, a region other than a region to be an electrode and / or wiring is irradiated with light to be exposed. The selection of the light-irradiated region and the non-irradiated region can be performed in the same manner as in a method of forming a mask using a normal photoresist.

 (2−4)現像工程
 現像工程は、上記露光工程で露光された塗膜について、所望の電極および/または配線とすべき領域以外の領域の塗膜を除去し、電極および/または配線パターンに沿った下地パターンを形成する工程である。
(2-4) Developing Step In the developing step, the coating film exposed in the above-described exposure step is removed of a coating film in a region other than a region where a desired electrode and / or wiring is to be formed, and the electrode and / or wiring pattern is formed. This is a step of forming a base pattern along the line.

 感光性樹脂がネガタイプの場合、光照射を受けていない塗膜は現像液に可溶で、光照射を受けた露光部の塗膜が現像液に不溶化するので、現像液に不溶化していない非光照射部の塗膜を現像液で溶解除去することで現像を行うことができる。また、感光性樹脂がポジタイプの場合、光照射を受けていない塗膜は現像液に対して不溶で、光照射を受けた露光部の塗膜が現像液に可溶化するので、現像液に可溶化した光照射部の塗膜を現像液で溶解除去することで現像を行うことができる。 When the photosensitive resin is of a negative type, the coating film that has not been irradiated with light is soluble in the developing solution, and the coating film on the exposed portion that has been irradiated with light is insoluble in the developing solution. The development can be performed by dissolving and removing the coating film of the light irradiation part with a developer. In addition, when the photosensitive resin is a positive type, the coating film that has not been irradiated with light is insoluble in the developing solution, and the coating film on the exposed portion that has been irradiated with light is solubilized in the developing solution. Developing can be performed by dissolving and removing the solubilized light-irradiated coating film with a developer.

 なお、現像液としては、前記水系溶媒と同様のものを用いることができる。 現 像 As the developer, the same one as the above-mentioned aqueous solvent can be used.

 (2−5)吸収工程
 吸収工程は、上記各工程を経て形成された下地パターンに、有機金属化合物を吸収させる工程である。
(2-5) Absorption Step The absorption step is a step of absorbing the organometallic compound into the underlying pattern formed through the above steps.

 有機金属化合物の吸収は、有機金属化合物の水系溶液と上記下地パターンを接触させ、下地パターンに該水系溶液を吸収させることで行うことができる。この吸収は、ディッピング法、スピン塗布法など、下地パターンに有機金属化合物水溶液を接触吸収させることができれば、どの手法でも可能である。 The absorption of the organometallic compound can be carried out by bringing the aqueous pattern of the organometallic compound into contact with the base pattern and allowing the base pattern to absorb the aqueous solution. This absorption can be performed by any method, such as a dipping method and a spin coating method, as long as the aqueous solution of the organic metal compound can be contact-absorbed to the underlying pattern.

 有機金属化合物としては、前記と同様の水系溶媒に溶解可能な水溶性を有し、後述する焼成工程により金属膜を形成可能なものが用いられる。具体的には、例えば金、白金、銀、パラジウム、銅などの錯体を挙げることができる。これらの中でも、化学的に極めて安定な電極および/または配線が得やすいことから、特に白金の錯体が好適に用いられる。錯体としては、その配位子が、含窒素化合物であるものが好ましい。特に、例えばエタノールアミン、プロパノールアミン、イソプロパノールアミン、ブタノールアミンなどのアルコールアミン、セリノール、TRISなど、炭素数が8以下の含窒素化合物のいずれか単独もしくは複数種類で配位子が構成された錯体がより好ましい。 As the organometallic compound, a compound having the same water-solubility as soluble in the same aqueous solvent as described above and capable of forming a metal film by a firing step described later is used. Specifically, for example, complexes of gold, platinum, silver, palladium, copper and the like can be mentioned. Among these, a platinum complex is particularly preferably used because an extremely stable electrode and / or wiring is easily obtained. The complex is preferably a complex whose ligand is a nitrogen-containing compound. In particular, for example, a complex in which a ligand is constituted by one or more of nitrogen-containing compounds having 8 or less carbon atoms, such as alcoholamines such as ethanolamine, propanolamine, isopropanolamine and butanolamine, serinol, TRIS, etc. More preferred.

 有機金属化合物の吸収の程度は、水系溶液との接触時間、水系溶液における有機金属化合物の濃度、下地パターンの吸収能力などに依存するが、適宜選択することが可能である。また、有機金属化合物の水系溶液との接触前に、下地パターンを水などに漬けて、有機金属化合物の水系溶液を吸収しやすくすることも可能である。 程度 The degree of absorption of the organometallic compound depends on the contact time with the aqueous solution, the concentration of the organometallic compound in the aqueous solution, the absorption capacity of the underlying pattern, and the like, but can be appropriately selected. In addition, before the contact with the aqueous solution of the organometallic compound, the base pattern can be immersed in water or the like to facilitate absorption of the aqueous solution of the organometallic compound.

 (2−6)洗浄工程
 洗浄工程は、下地パターンに有機金属化合物の水系溶液を吸収させた後、下地パターンに付着した余剰の該水系溶液や、下地パターン以外の箇所に付着した余剰の該水系溶液を除去する工程である。
(2-6) Cleaning Step In the cleaning step, after the aqueous solution of the organometallic compound is absorbed in the underlying pattern, the excess aqueous solution attached to the underlying pattern or the excess aqueous solution attached to a portion other than the underlying pattern is used. This is the step of removing the solution.

 この洗浄工程は、有機金属化合物の水系溶液における水系溶媒と同様の洗浄液を用い、この洗浄液に前記下地パターンを形成した基体を浸漬する方法や、該洗浄液を前記下地パターンを形成した基体に吹き付けることなどによって行うことができる。また、洗浄工程は、例えばエアーの吹き付けや振動などで余剰の水系溶液を十分振り落とすことで行うこともできる。 This cleaning step uses a cleaning liquid similar to the aqueous solvent in the aqueous solution of the organometallic compound, and immerses the substrate on which the base pattern is formed in the cleaning liquid, or sprays the cleaning liquid on the base on which the base pattern is formed. And so on. The washing step can also be performed by sufficiently shaking off excess aqueous solution by, for example, blowing air or vibrating.

 (2−7)焼成工程
 焼成工程は、前記吸収工程を経た下地パターン(ネガタイプでは光照射部の塗膜、ポジタイプでは非光照射部の塗膜)を焼成し、下地パターン中の有機成分を分解除去し、有機金属化合物成分として含まれる金属の膜を形成する工程である。
(2-7) Firing Step In the firing step, the underlying pattern (the coating film of the light-irradiated portion in the negative type and the coating film of the non-light-irradiated portion in the positive type) having undergone the absorption step is fired to decompose the organic components in the underlying pattern. This is a step of removing and forming a film of a metal contained as an organometallic compound component.

 焼成は、形成する金属膜が貴金属の膜である場合には大気中で行うことができるが、銅やパラジウムなどの酸化しやすい金属膜の場合には真空もしくは脱酸素雰囲気下(例えば窒素などの不活性ガス雰囲気下など)で行うこともできる。 When the metal film to be formed is a noble metal film, the firing can be performed in the air. However, when the metal film is easily oxidized such as copper or palladium, the firing is performed in a vacuum or deoxygenated atmosphere (for example, nitrogen or the like) Under an inert gas atmosphere).

 焼成は、下地パターンに含まれる有機成分の種類などによっても相違するが、通常400℃〜600℃の温度下に数分〜数十分置くことで行うことができる。焼成は、例えば熱風循環炉などで行うことができる。この焼成によって、基板上に、所定の電極および/または配線のパターンに沿った形状で金属膜を形成することができる。 The baking can be performed by placing the baking at a temperature of 400 ° C to 600 ° C for several minutes to several tens of minutes, although it varies depending on the kind of the organic component contained in the base pattern. The firing can be performed, for example, in a hot air circulation furnace or the like. By this baking, a metal film can be formed on the substrate in a shape along a predetermined electrode and / or wiring pattern.

 (4)画像形成装置の製造方法
 上述した本発明の電極・配線形成方法は、複数の電子放出素子と、該電子放出素子から放出される電子線の照射により画像を形成する画像形成部材とを具備する画像形成装置の製造方法に好適に用いることができる。すなわち、画像形成装置における電極と配線のいずれか一方もしくは両者を本発明の電極・配線形成方法で形成することで、製造工程を大幅に簡略化することが可能となる。
(4) Method of Manufacturing Image Forming Apparatus The above-described electrode / wiring forming method of the present invention includes a plurality of electron-emitting devices and an image-forming member that forms an image by irradiating an electron beam emitted from the electron-emitting devices. The present invention can be suitably used for a method of manufacturing an image forming apparatus provided. That is, by forming one or both of the electrode and the wiring in the image forming apparatus by the electrode / wiring forming method of the present invention, it is possible to greatly simplify the manufacturing process.

 製造対象である画像形成装置に用いられる電子放出素子としては、例えば表面伝導型電子放出素子、電界放出型(FE型)電子放出素子、金属/絶縁層/金属型(MIM型)電子放出素子などの冷陰極素子が好ましく、これらの中でも本発明の電極・配線形成方法で素子電極を一度に形成しやすい表面伝導型電子放出素子が好ましい。また、本発明の電極・配線形成方法によれば、素子電極と同時に各電子放出素子を駆動するために必要な配線をも形成することができる。 Examples of the electron-emitting device used in the image forming apparatus to be manufactured include a surface conduction electron-emitting device, a field emission (FE) electron-emitting device, and a metal / insulating layer / metal-type (MIM) electron-emitting device. Of these, a cold cathode device is preferred, and among these, a surface conduction electron-emitting device in which device electrodes are easily formed at once by the electrode / wiring forming method of the present invention is preferred. Further, according to the electrode / wiring forming method of the present invention, it is possible to form the wiring necessary for driving each electron-emitting device simultaneously with the device electrode.

 本発明における画像形成装置とは、例えばテレビ受像器やコンピューターディスプレーの他、例えばプリンターやコピーなどを含むものである。例えばテレビ受像器やコンピューターディスプレーなどの場合、画像形成部材としては電子線の照射により発光する蛍光体を用いることができ、例えばプリンターやコピーなど場合、画像形成部材としては電子線の照射により潜像を形成する潜像形成部材を用いることができる。 画像 The image forming apparatus in the present invention includes, for example, a printer and a copy in addition to a television receiver and a computer display, for example. For example, in the case of a television receiver or a computer display, a phosphor that emits light by irradiation with an electron beam can be used as an image forming member.For example, in the case of a printer or a copy, a latent image can be formed by irradiation of an electron beam as an image forming member. May be used.

 以下、実施例を用いて本発明をより詳しく説明するが、この実施例は本発明を限定するものではない。 Hereinafter, the present invention will be described in more detail with reference to examples, but the examples do not limit the present invention.

 実施例1
 金属化合物(酢酸鉛)の水溶液(鉛含有量1重量%)と、感光性樹脂成分(感光剤として4,4’−ジアジドスチルベン−2,2’−ジスルホン酸ナトリウムを含有するポリビニルアルコール)の水溶液を以下の比率で混合し、下地材料1−Aを調製した。
Example 1
An aqueous solution of a metal compound (lead acetate) (lead content 1% by weight) and a photosensitive resin component (polyvinyl alcohol containing sodium 4,4′-diazidostilbene-2,2′-disulfonate as a sensitizer) The aqueous solutions were mixed at the following ratio to prepare a base material 1-A.

    金属化合物:      10重量部
    感光性樹脂成分樹脂:  90重量部(感光剤10重量部を含む)
Metal compound: 10 parts by weight Photosensitive resin component resin: 90 parts by weight (including 10 parts by weight of photosensitive agent)

 この下地材料1−Aをガラス製の基板(75mm×75mm×厚さ2.8mm)にスピンコーターで全面に塗布し、ホットプレートにより80℃で2分間乾燥した。乾燥後の塗膜の厚みは1.34μmであった。 下地 This base material 1-A was applied to the entire surface of a glass substrate (75 mm × 75 mm × thickness 2.8 mm) with a spin coater, and dried at 80 ° C. for 2 minutes on a hot plate. The thickness of the coating film after drying was 1.34 μm.

 次いで、ネガフォトマスクを用い、光源を超高圧水銀ランプ(照度=8.0mW/cm2)にて、30μmのギャップを保持して、上記塗膜を露光時間30秒で露光した。露光後、現像液として純水を用い、ディッピングで30秒間処理し、目的のパターンにパターニングされた下地パターンを得た。 Next, using a negative photomask, the coating film was exposed for an exposure time of 30 seconds using an ultrahigh pressure mercury lamp (illuminance = 8.0 mW / cm2) as a light source while maintaining a gap of 30 μm. After the exposure, pure water was used as a developing solution, and the substrate was treated by dipping for 30 seconds to obtain a base pattern patterned into a target pattern.

 この下地パターンを形成した基板を純水中に30秒浸漬した後、テトラ白金モノエタノールアミン錯体の水溶液(白金含有量1重量%)に60秒浸漬した。このとき、スターラにより、下地パターン上にて攪拌速度が0.1m/秒となるように水溶液を攪拌した。 基板 After the substrate on which the base pattern was formed was immersed in pure water for 30 seconds, it was immersed in an aqueous solution of a tetraplatinum monoethanolamine complex (platinum content: 1% by weight) for 60 seconds. At this time, the aqueous solution was stirred with a stirrer so that the stirring speed was 0.1 m / sec on the underlying pattern.

 その後、基板を引き上げ、流水で5秒間洗浄し、エアーで水切りをし、80℃のホットプレートで3分間乾燥した。 Thereafter, the substrate was lifted, washed with running water for 5 seconds, drained with air, and dried on a hot plate at 80 ° C. for 3 minutes.

 その後、熱風循環炉にて、500℃で30分間焼成して電極間距離20μm、幅60μm、長さ120μm、厚み20nmの白金の電極を形成した。 (5) Thereafter, firing was performed at 500 ° C. for 30 minutes in a hot air circulating furnace to form a platinum electrode having a distance between electrodes of 20 μm, a width of 60 μm, a length of 120 μm, and a thickness of 20 nm.

 この電極のシート抵抗値は、200Ω/□であった。 シ ー ト The sheet resistance of this electrode was 200Ω / □.

 さらに、密着性を測定するためにテープ剥離試験を行った結果、電極パターンの剥離は見られずに良好であった。 Furthermore, as a result of performing a tape peeling test to measure the adhesion, no peeling of the electrode pattern was observed, which was favorable.

 その後、この電極パターン形成方法を用いて画像形成装置を作製したが、洗浄工程において超音波をかけても電極パターンの剥離は見られなかった。 Thereafter, an image forming apparatus was manufactured using this electrode pattern forming method, but no peeling of the electrode pattern was observed even when ultrasonic waves were applied in the cleaning step.

 比較例1
 感光性樹脂(三洋化成製「サンレジナー(Sanresiner)BMR−850」)に、アミン系シランカップリング剤(信越化学製「KBM−603」)を0.06重量%添加した溶液を、ガラス製の基板(75mm×75mm×厚さ2.8mm)にスピンコーターで全面に塗布し、ホットプレートにより45℃で2分間乾燥した。
Comparative Example 1
A glass substrate was prepared by adding a solution obtained by adding 0.06% by weight of an amine silane coupling agent ("KBM-603" manufactured by Shin-Etsu Chemical) to a photosensitive resin ("Sanresiner BMR-850" manufactured by Sanyo Kasei). (75 mm × 75 mm × thickness 2.8 mm) was applied over the entire surface by a spin coater, and dried at 45 ° C. for 2 minutes on a hot plate.

 次いで、ネガフォトマスクを用い、光源を超高圧水銀ランプ(照度:8.0mW/cm2)にて、基板とマスクをコンタクトさせ、露光時間2秒で露光した後、現像液として純水を用い、ディッピングで30秒間処理し、目的の樹脂パターンを得た。樹脂パターンの膜厚は1.55μmであった。 Then, using a negative photomask, the light source was brought into contact with the substrate and the mask with an ultra-high pressure mercury lamp (illuminance: 8.0 mW / cm2), and after exposure for 2 seconds, pure water was used as a developing solution. This was treated by dipping for 30 seconds to obtain a target resin pattern. The thickness of the resin pattern was 1.55 μm.

 この樹脂パターンを形成した基板を純水中に30秒浸漬した後、テトラ白金モノエタノールアミン錯体溶液(白金含有量1重量%)に60秒浸漬した。 基板 The substrate on which the resin pattern was formed was immersed in pure water for 30 seconds, and then immersed in a tetraplatinum monoethanolamine complex solution (platinum content 1% by weight) for 60 seconds.

 その後、基板を引き上げ、流水で5秒間洗浄し、エアーで水切りをし、80℃のホットプレートで3分乾燥した。 Thereafter, the substrate was pulled up, washed with running water for 5 seconds, drained with air, and dried on a hot plate at 80 ° C. for 3 minutes.

 その後、熱風循環炉にて、500℃で30分間焼成して電極間距離20μm、幅60μm、長さ120μm、厚み20nmの白金の電極を形成した。 (5) Thereafter, firing was performed at 500 ° C. for 30 minutes in a hot air circulating furnace to form a platinum electrode having a distance between electrodes of 20 μm, a width of 60 μm, a length of 120 μm, and a thickness of 20 nm.

 この電極のシート抵抗値は、45Ω/□であった。 シ ー ト The sheet resistance of this electrode was 45Ω / □.

 さらに、密着性を測定するためにテープ剥離試験を行った結果、電極パターンの密着性が不安定なため、基板内の一部で電極パターンの剥離がみられた。 Furthermore, as a result of performing a tape peeling test to measure the adhesion, the electrode pattern was peeled in a part of the substrate because the adhesion of the electrode pattern was unstable.

 その後、この電極パターン形成方法を用いて画像形成装置を作製したが、洗浄工程において超音波をかけた所、一部の電極パターンに剥離が見られた。 Thereafter, an image forming apparatus was manufactured using this electrode pattern forming method. When ultrasonic waves were applied in the cleaning step, peeling was observed in some of the electrode patterns.

 実施例2
 本発明の電極・配線形成方法を用いて画像形成装置を製造した。以下、図1および図2に基づいて製造手順を説明する。
Example 2
An image forming apparatus was manufactured using the electrode / wiring forming method of the present invention. Hereinafter, the manufacturing procedure will be described with reference to FIGS.

 工程1:300mm×300mm×厚さ2.8mmのガラス製の基板1上に多数の素子電極対を実施例1と同様な手法で作成した。 Step 1: A large number of device electrode pairs were formed on a glass substrate 1 having a size of 300 mm × 300 mm × thickness 2.8 mm in the same manner as in Example 1.

 本実施例における素子電極対は、幅60μm、長さ480μmの素子電極Aと、幅120μm、長さ200μmの素子電極Bとを電極間ギャップ20μmで対向させたものとした。また、素子電極対間のピッチは、横方向300μm、縦方向650μmとし、素子電極対数720×240としてマトリクス形状に配置した。素子電極対の形成と同時に形成した1cm×1cmの白金膜パターンのシート抵抗値は26Ω/□であった。 素 子 The device electrode pair in the present example was such that a device electrode A having a width of 60 μm and a length of 480 μm was opposed to a device electrode B having a width of 120 μm and a length of 200 μm with a gap between the electrodes of 20 μm. The pitch between the element electrode pairs was 300 μm in the horizontal direction and 650 μm in the vertical direction, and the number of element electrode pairs was 720 × 240, and they were arranged in a matrix. The sheet resistance of a 1 cm × 1 cm platinum film pattern formed simultaneously with the formation of the device electrode pair was 26 Ω / □.

 工程2:各列の素子電極対の一方の素子電極Aを接続するX方向配線2をスクリーン印刷法で付設した。次に、厚さ20μmの層間絶縁層(図面上は省略されている)をスクリーン印刷法により付設した上に、さらに各行の素子電極対の一方の素子電極Bを接続するY方向配線3をX方向配線2と同様にして付設し、焼成を行なってX方向配線2とY方向配線3とした。 {Circle around (2)} Step 2: An X-directional wiring 2 for connecting one of the device electrodes A of the device electrode pair in each column was provided by a screen printing method. Next, an interlayer insulating layer (not shown in the drawing) having a thickness of 20 μm is provided by a screen printing method, and further, a Y-directional wiring 3 for connecting one of the device electrodes B of the device electrode pair of each row is formed by X. It was attached in the same manner as the directional wiring 2 and baked to form an X directional wiring 2 and a Y directional wiring 3.

 工程3:工程2でX方向配線2とY方向配線3を形成した基板1を純水で洗浄した。 Step 3: The substrate 1 on which the X-directional wiring 2 and the Y-directional wiring 3 were formed in the step 2 was washed with pure water.

 工程4:ポリビニルアルコールを0.05重量%濃度、2−プロパノールを15重量%濃度、エチレングリコールを1重量%濃度で溶解した水溶液に、酢酸パラジウム−モノエタノールアミン錯体をパラジウムが約0.15重量%濃度となるように溶解して淡黄色水溶液を得た。 Step 4: Palladium acetate-monoethanolamine complex is added in an aqueous solution in which polyvinyl alcohol is dissolved at a concentration of 0.05% by weight, 2-propanol at a concentration of 15% by weight, and ethylene glycol at a concentration of 1% by weight to a concentration of about 0.15% by weight of palladium. % To give a pale yellow aqueous solution.

 上記水溶液の液滴を、インクジェット法によって、各素子電極対を成す素子電極A,B上から当該素子電極A,B間の電極ギャップ内に亘って付設されるよう、同じ箇所に4回付与した(ドット径=約100μm)。 Drops of the aqueous solution were applied to the same location four times by ink-jet method so as to be applied from the device electrodes A and B forming each device electrode pair to the electrode gap between the device electrodes A and B. (Dot diameter = about 100 μm).

 上記水溶液の液滴を付設した基板1を350℃の焼成炉にて30分間焼成し、各素子電極対間に、当該素子電極対を成す素子電極A,B間を連絡するパラジウム薄膜4を形成した後、当該基板1をリアプレート5に固定した。 The substrate 1 provided with the aqueous solution droplets is fired in a firing furnace at 350 ° C. for 30 minutes to form a palladium thin film 4 between each of the device electrode pairs, which connects between the device electrodes A and B forming the device electrode pair. After that, the substrate 1 was fixed to the rear plate 5.

 工程5:ガラス製の基板7の内面に蛍光膜8とメタルバック9が形成されたフェースプレート10と、上記リアプレートを向き合わせ、支持枠6を介して封着して外囲器11を構成した。支持枠6には予め通排気に使用される給排気管を接着した。 Step 5: A face plate 10 in which a fluorescent film 8 and a metal back 9 are formed on an inner surface of a glass substrate 7 and the rear plate are faced to each other and sealed via a support frame 6 to form an envelope 11. did. A supply / exhaust pipe used for air passage / exhaust was previously bonded to the support frame 6.

 工程6:給排気管を介して外囲器内を1.3×10−5Paまで排気後、各X方向配線2に連なるX方向端子Dx1〜Dxnと、各Y方向配線3に連なるY方向端子Dy1〜Dynを用い、各列の素子電極対間に電圧を加え、素子電極A,B間のパラジウム薄膜4に数十μmの亀裂部を発生させるフォーミングをライン毎に行い、表面伝導型電子放出素子を形成した。 Step 6: After evacuating the inside of the envelope to 1.3 × 10 −5 Pa through the supply / exhaust pipe, X-direction terminals Dx1 to Dxn connected to each X-direction wiring 2 and Y-direction terminals connected to each Y-direction wiring 3 Using Dy1 to Dyn, a voltage is applied between the pair of device electrodes in each row, forming is performed for each line to generate a crack of several tens of μm in the palladium thin film 4 between the device electrodes A and B, and surface conduction electron emission is performed. An element was formed.

 工程7:外囲器11内を1.3×10−5Paまで排気後、外囲器11内が1.3×10−2Paとなるまでベンゾニトリルを給排気管から導入し、上記フォーミングと同様にして、各素子電極対間にパルス電圧を供給し、上記パラジウム薄膜の亀裂部にカーボンを堆積させる活性化を行った。パルス電圧は各ラインに対して25分間印加した。 Step 7: After evacuating the inside of the envelope 11 to 1.3 × 10 −5 Pa, benzonitrile is introduced from the supply / exhaust pipe until the inside of the envelope 11 reaches 1.3 × 10 −2 Pa, and the same as the above-described forming. Then, a pulse voltage was supplied between each element electrode pair to activate carbon deposits in the cracks of the palladium thin film. The pulse voltage was applied to each line for 25 minutes.

 工程8:給排気管より外囲器11内の排気を充分に行った後、250℃で3時間外囲器11全体を加熱しながらさらに排気し、最後にゲッタをフラッシュし、給排気管を封止した。 Step 8: After sufficiently exhausting the inside of the envelope 11 from the supply / exhaust pipe, further exhausting while heating the entire envelope 11 at 250 ° C. for 3 hours. Finally, the getter is flushed and the supply / exhaust pipe is closed. Sealed.

 このようにして図2に示されるような表示パネルを製造し、不図示の走査回路・制御回路・変調回路・直流電圧源などからなる駆動回路を接続し、パネル状の画像形成装置を製造した。 In this way, a display panel as shown in FIG. 2 was manufactured, and a driving circuit including a scanning circuit, a control circuit, a modulation circuit, a DC voltage source, and the like (not shown) were connected to manufacture a panel-shaped image forming apparatus. .

 X方向端子Dx1〜DxnとY方向端子Dy1〜Dynを通じて、各表面伝導型電子放出素子に時分割で所定電圧を印加し、高電圧端子12を通じてメタルバック9に高電圧を印加することによって、任意のマトリクス画像パターンを良好な画像品質で表示することができた。 By applying a predetermined voltage to each of the surface conduction electron-emitting devices in a time-division manner through the X-direction terminals Dx1 to Dxn and the Y-direction terminals Dy1 to Dyn, and applying a high voltage to the metal back 9 through the high-voltage terminal 12, Could be displayed with good image quality.

実施例2で形成した電極パターンの模式図であるFIG. 9 is a schematic diagram of an electrode pattern formed in Example 2. 実施例2で製造した画像形成装置の表示パネル部分を示す模式図である。FIG. 8 is a schematic diagram illustrating a display panel portion of the image forming apparatus manufactured in the second embodiment.

符号の説明Explanation of reference numerals

 A  素子電極
 B  素子電極
 Dx1〜Dxn X方向端子
 Dy1〜Dyn Y方向端子
 1  基板
 2  X方向配線
 3  Y方向配線
 4  パラジウム薄膜
 5  リアプレート
 6  支持枠
 7  基板
 8  蛍光膜
 9  メタルバック
 10 フェースプレート
 11 外囲器
 12 高電圧端子
A element electrode B element electrode Dx1 to Dxn X direction terminal Dy1 to Dyn Y direction terminal 1 substrate 2 X direction wiring 3 Y direction wiring 4 palladium thin film 5 rear plate 6 support frame 7 substrate 8 fluorescent film 9 metal back 10 face plate 11 outside Enclosure 12 High voltage terminal

Claims (9)

基板上に下地パターンを形成する下地パターン形成工程と、該下地パターンに有機金属化合物を吸収させる吸収工程と、該有機金属化合物を吸収した下地パターンを焼成する焼成工程とを有し、前記下地パターン形成工程は、水溶性感光性樹脂成分と水溶性金属化合物とを含有する感光性樹脂を前記基板上に塗布する工程及び露光する工程からなることを特徴とする電極・配線形成方法。 A base pattern forming step of forming a base pattern on a substrate, an absorption step of absorbing the organic metal compound in the base pattern, and a baking step of firing the base pattern having absorbed the organic metal compound, the base pattern The method for forming an electrode / wiring comprises forming a photosensitive resin containing a water-soluble photosensitive resin component and a water-soluble metal compound on the substrate, and exposing the substrate to light. 水溶性感光樹脂成分と、水溶性金属化合物とを含有する水系溶液であることを特徴とする電極・配線材料吸収用下地パターン形成材料。 An underlayer pattern forming material for absorbing electrode / wiring material, which is an aqueous solution containing a water-soluble photosensitive resin component and a water-soluble metal compound. 前記水溶性金属化合物の前記感光性樹脂成分に対する比率が、1.0重量%以上20重量%以下であることを特徴とする請求項1または2記載の電極・配線形成方法または電極・配線材料吸収用下地パターン形成材料。 3. The electrode / wiring forming method or electrode / wiring material absorption according to claim 1, wherein a ratio of the water-soluble metal compound to the photosensitive resin component is 1.0% by weight or more and 20% by weight or less. Base pattern forming material. 前記水溶性金属化合物がロジウム、ビスマス、ルテニウム、バナジウム、クロム、錫、鉛、ケイ素を含む水溶性金属化合物であることを特徴とする請求項1〜3に記載の電極・配線形成方法または電極・配線材料吸収用下地パターン形成材料。 The electrode or wiring forming method or the electrode according to claim 1, wherein the water-soluble metal compound is a water-soluble metal compound containing rhodium, bismuth, ruthenium, vanadium, chromium, tin, lead, and silicon. Underlayer pattern forming material for wiring material absorption. 前記有機金属化合物が錯体であって、その配位子が、含窒素化合物であることを特徴とする請求項1または3記載の電極・配線形成方法。 4. The method according to claim 1, wherein the organometallic compound is a complex and the ligand is a nitrogen-containing compound. 前記含窒素化合物が、炭素数が8以下の含窒素化合物であることを特徴とする請求項5記載の電極・配線形成方法。 6. The method according to claim 5, wherein the nitrogen-containing compound is a nitrogen-containing compound having 8 or less carbon atoms. 前記有機金属化合物が白金錯体であることを特徴とする請求項1または3に記載の電極・配線形成方法。 4. The method according to claim 1, wherein the organometallic compound is a platinum complex. 前記水溶性感光樹脂成分が、ポリビニルアルコール系樹脂またはポロビニルピロリドン系樹脂である請求項3に記載の電極・配線形成方法または電極・配線材料吸収用下地パターン形成材料。 The electrode / wiring forming method or the electrode / wiring material absorbing base pattern forming material according to claim 3, wherein the water-soluble photosensitive resin component is a polyvinyl alcohol-based resin or a polyvinylpyrrolidone-based resin. 複数の電子放出素子と、該電子放出素子から放出される電子線の照射により画像を形成する画像形成部材とを具備する画像形成装置の製造方法において、電極と配線のいずれか一方もしくは両者を請求項1または3に記載の方法で形成したことを特徴とする画像形成装置の製造方法。 In a method of manufacturing an image forming apparatus, comprising: a plurality of electron-emitting devices; and an image forming member that forms an image by irradiating an electron beam emitted from the electron-emitting devices, wherein one or both of the electrodes and the wiring are charged. Item 4. A method for manufacturing an image forming apparatus formed by the method according to Item 1 or 3.
JP2003285853A 2002-08-05 2003-08-04 Electrode / wiring forming method and image forming apparatus manufacturing method Expired - Fee Related JP4262027B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547620B2 (en) 2004-09-01 2009-06-16 Canon Kabushiki Kaisha Film pattern producing method, and producing method for electronic device, electron-emitting device and electron source substrate utilizing the same
US8253137B2 (en) 2007-07-18 2012-08-28 Ricoh Company, Ltd. Laminate structure, electronic device, and display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547620B2 (en) 2004-09-01 2009-06-16 Canon Kabushiki Kaisha Film pattern producing method, and producing method for electronic device, electron-emitting device and electron source substrate utilizing the same
US8253137B2 (en) 2007-07-18 2012-08-28 Ricoh Company, Ltd. Laminate structure, electronic device, and display device

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