JP2004087567A - Apparatus and method for analyzing defect of stencil mask - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a defect analysis apparatus for systematically and quantitatively analyzing a defect of a stencil mask. <P>SOLUTION: A stencil mask detect inspection apparatus 10 is provided with a defect observation unit 12 for obtaining defect information on a stencil mask and recording the information; a defect analysis unit 14 for receiving the defect information from the defect observation unit 12 and analyzing the defect; a CAD data simulation unit 16 for performing electron ray image simulation on the basis of stencil mask pattern data and CAD pattern data and transmitting the result to the defect analysis unit 14; and a map defect image data simulation unit 18 for performing electronic ray map image simulation of the defect, storing the result to a database and transmitting it to the defect analysis unit 14. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a stencil mask defect analysis apparatus and a defect analysis method, and more particularly to a stencil mask defect analysis apparatus and a defect analysis method that can quickly and easily perform systematic defect analysis.
[0002]
[Prior art]
If a defect exists in an optical photomask used for photolithography processing in the manufacture of a semiconductor device or the like, the defect is directly transferred onto a wafer and affects the performance of a semiconductor device or the like shipped as a product. Therefore, analyzing a defect in an optical photomask is extremely important for improving the performance of a semiconductor device or the like. Here, the term “defect analysis” refers to evaluating how a defect in an optical photomask affects a wafer pattern when a mask pattern of the optical photomask is transferred to a wafer to form a wafer pattern. .
[0003]
Conventionally, defect analysis of an optical photomask has been performed by actually transferring a defect onto a wafer.
Then, based on the transfer result, the standard setting of the quality judgment of the pattern, the setting of the allowable range such as the size and the shape of the defect, and the cause of the defect generation in the optical photomask manufacturing process are performed.
[0004]
Here, first to third conventional defect analysis methods for an optical photomask will be described with reference to the prior art described in JP-A-10-293393, which proposes an optical photomask defect analyzer.
In the first conventional method, first, an optical photomask having a defect is prepared in step 1, and in step 2, an optical photomask defect inspection machine or an optical observation device such as an optical microscope is used to prepare in step 1. A defective portion in the optical photomask having a defect is detected and observed.
In step 3, information such as the position, shape, and size of the defective portion is recorded. Next, in step 4, this optical photomask is mounted on an exposure apparatus, and is actually exposed and transferred to a resist film on a wafer.
Then, in step 5, a predetermined lithography process is performed on the resist film to form a resist pattern on the wafer. Defects of the photomask are transferred to the resist pattern.
[0005]
Next, in Step 6, a pattern portion corresponding to a position having an optical photomask defect in the formed resist pattern is observed. Next, by comparing and evaluating the pattern portion corresponding to the optical photomask defect in step 7 and the information on the optical photomask defect obtained in step 2, the effect of the optical photomask defect on the resist pattern is evaluated. Evaluate what was given.
[0006]
However, in order to carry out the above-described first conventional mask defect analysis method, the following conditions were met.
First, a defect must be present on the optical photomask, that is, a defective optical photomask is prepared, and the defect is formed in a shape and size suitable for the purpose of defect analysis evaluation. It is necessary to be.
Second, it is necessary to prepare a set of equipment for a wafer lithography process including an exposure apparatus, and actually perform exposure and lithography processing.
Third, the optical photomask defect must be actually exposed and transferred onto a wafer for evaluation, so that an optical photomask defect inspection device and a wafer defect inspection device, or an equivalent optical defect observation device are required. .
[0007]
Furthermore, the first method has a problem that it is difficult to apply the analysis and evaluation results to actual manufacturing of a semiconductor device or the like even if the analysis and evaluation of the influence of defects are performed according to the above-described procedure. This is because the defect of the optical photomask is formed “accidentally” in the manufacturing process of the optical photomask, and cannot originally be reproduced intentionally.
That is, it is difficult to control the optical photomask defect to an arbitrary shape and size, and it is difficult to freely obtain a shape defect and a size defect necessary for analysis. Therefore, the first method described above cannot systematically evaluate the influence of a defect. Further, in the first method, since the exposure transfer test is actually performed over a long period of time using expensive equipment, the cost is increased and is not practical.
[0008]
Therefore, as a second method, pattern data simulating the shape and size of a defect is created, and using this pattern data, an optical photomask in which a pseudo defect of an arbitrary shape and size is present is manufactured. A method for evaluating the influence of defects using the manufactured optical photomask in the same manner as the first method has been proposed.
[0009]
However, a mask defect intentionally created by using the second method is also a patterned defect, and is inevitably restricted as a mask pattern. That is, actual general optical photomask defects are generated from various causes during the mask manufacturing process, for example, unspecified causes such as foreign matter, contamination, contamination, cracks, uneven exposure, and uneven cleaning. It is different from intentionally created mask defects.
[0010]
In general, the shape of a general optical photomask defect has a shape including a curved portion such as an irregular shape or a circle, and the size varies from a size observable to the naked eye to a size smaller than a submicron. The densities to be performed are similarly varied.
On the other hand, most defects formed as patterns are displayed as rectangles or a combination of rectangles due to the limitation of pattern data design by CAD. It is essentially different from including.
In addition, although the size of the defect can be controlled to some extent, it is difficult to fabricate a small-sized defect of submicron or less from the manufacturing process of the optical photomask, and it is necessary to control the defect to the intended shape and size. Very difficult.
[0011]
Further, among the defects caused by contamination, optical density may be different from a normal mask pattern, such as a translucent one, or a non-uniform optical density such that the density distribution differs between the center and the periphery. There is. Such a defect can no longer be intentionally controlled and created as a mask pattern.
Therefore, in the above-mentioned second method, the analysis of the mask defect targets a defect of a size and a shape in a very limited range, is not practical, and requires the production of an exposure mask. Therefore, there is a problem that the cost increases.
[0012]
Therefore, as a third method, a method of performing a defect analysis of an optical photomask by computer simulation has been proposed.
Here, the computer simulation means a light intensity simulation for simulating an exposure step of a photolithography process. The light intensity simulation simulates an exposure distribution on a wafer based on optical photomask / pattern data and using exposure transfer conditions as parameters.
[0013]
The procedure of the third method will be described below.
First, in step 1, pseudo defect pattern data (hereinafter referred to as defect data) simulating only a mask defect is created as light intensity simulation data. The defect data must be designed as a pattern composed of rectangles or a combination of rectangles in order to be created as data for light intensity simulation. However, since the size of the rectangle itself (this is called increment) is not limited, computer Can be made as small as possible as long as the calculation capability allows, and can approximate the actual defect shape to some extent.
Further, since this defect data is data on a computer, and there is no need to make an actual optical photomask, there are also problems in optical photomask production and cost as in the first and second methods described above. Absent.
[0014]
Next, in step 2, mask pattern data simulating a normal mask pattern is prepared, and this data is converted for light intensity simulation.
Further, in step 3, the mask pattern data subjected to the data conversion is combined with the defect data created in step 1. Here, the mask pattern data and the defect data may be created in the same layer from the beginning, and in that case, it is not necessary to combine them. Further, when the defect and the pattern are formed on different layers, several types of the defect and the pattern can be separately prepared, and various combinations can be made at the time of synthesis. Which method is adopted can be appropriately selected.
[0015]
Then, in step 4, light intensity simulation is performed on the combined data using predetermined exposure and transfer conditions as parameters. Next, in step 5, by analyzing and evaluating the simulation result obtained by the light intensity simulation performed in step 4, the influence of the defect upon exposure and transfer of the optical photomask pattern is evaluated.
According to this method, the defect analysis can be performed only on the computer without actually manufacturing the mask and the defect, so that there is an advantage that the method can be performed very quickly and at low cost.
[0016]
Japanese Patent Application Laid-Open No. 10-293393 discloses the following method of analyzing a photomask defect as a fourth method.
The fourth method is an optical photomask defect analysis method for analyzing the influence of an optical photomask defect in a photolithography step, wherein the optical photomask defect is optically observed and the defect is extracted as image information. Then, this image information or image information obtained by subjecting the image information to a predetermined image conversion process is combined with arbitrary optical photomask data, a light intensity simulation is performed on the combined pattern data, and the result is analyzed. Thus, the influence of the defect on the optical photomask is analyzed (Publication 4 mentioned above, FIG. 1).
[0017]
In addition, the above-mentioned publication also discloses an optical photomask defect analysis apparatus that performs the above-described optical photomask defect analysis method. The apparatus is an optical photomask defect analyzer for analyzing the influence of defects on an optical photomask in a photolithography process, and includes extraction means for extracting image information of defects on the optical photomask, and extraction means. It is provided with analysis means for performing a light intensity simulation based on the extracted image information of the defect and the optical photomask pattern data stored in advance, and then analyzing the simulation result (see the above-mentioned publication, page 4). , FIG. 1).
The analyzing means of the optical photomask defect analyzing apparatus includes an image converting means for converting the image information of the defect such that the shape of the defect represented by the image information of the extracted defect has a desired shape; Storage means for storing the optical photomask pattern data in advance, data synthesizing means for reading out the optical photomask pattern data from the storage means and synthesizing with the image information of the defect extracted by the image conversion means, Simulation means for performing a light intensity simulation based on the obtained data, and data analysis processing means for performing analysis processing of data obtained as a result of the simulation by the simulation means.
[0018]
According to the above-mentioned publication, an optical photomask defect analyzer captures defect image information obtained by observing optical photomask defects, appropriately converts the image into defect information for analysis, It is said that it is possible to perform desired defect analysis by light intensity simulation by combining with a pattern.
In addition, by the optical photomask defect analysis method, information such as the shape, size, and optical density of the actual optical photomask defect can be accurately captured. Then, by performing light intensity simulation, it is possible to quickly and easily perform systematic defect analysis after variously changing the defect shape and size.
[0019]
[Patent Document 1]
JP-A-10-293393 (page 4, FIG. 1)
[0020]
[Problems to be solved by the invention]
However, stencil masks used in electron beam projection lithography are significantly different from optical photomasks in mask structure and material, especially in the same-size masks required for low-acceleration electron beam proximity projection exposure. It is difficult to apply the above-described conventional technology to stencil mask defect inspection because of the necessity of defect detection and analysis of minute defects, and there are various problems in the conventional method. There is a problem that the problem becomes more prominent and the difficulty level increases.
That is, conventionally, it is considered that the defect analysis of the stencil mask has not been established yet.
[0021]
Therefore, an object of the present invention is to provide a defect analysis device and a defect analysis method for systematically and quantitatively analyzing a defect of a stencil mask.
[0022]
[Means for Solving the Problems]
In order to achieve the above object, a stencil mask defect analysis device according to the present invention is a stencil mask defect analysis device for analyzing the effect of a stencil mask defect on a pattern transferred onto a wafer by electron beam projection lithography. hand,
Extracting means for extracting image information of a stencil mask defect;
Storage means for storing stencil mask pattern data and CAD pattern data;
First simulation means for generating a transfer electron beam image of the stencil mask by performing an electron beam image generation simulation based on the stencil mask pattern data read from the storage means and the CAD pattern data;
A database of stencil mask defect patterns,
Image combining means for combining a transfer electron beam image of a stencil mask having a defect based on the defect pattern read from the database and the transfer electron beam image of the stencil mask obtained by the first simulation means;
Analyzing means for comparing and analyzing the image information of the defect extracted by the extracting means and the transfer electron beam image of the stencil mask having the defect obtained by the image synthesizing means, and outputting the analysis result of the defect;
It is characterized by having.
[0023]
The stencil mask defect analysis device according to the present invention can be configured by using a CCD image pickup device as an extraction unit and using a normal computer as a first simulation unit, a database, an image synthesis unit, and an analysis unit. it can.
[0024]
In a preferred embodiment of the present invention, the image information of the defect is converted so that the shape of the defect represented by the image information of the defect extracted by the extracting means has a desired shape, and the image of the defect is transmitted to the analyzing means. Image conversion processing means for outputting information is provided. Thus, the defect of the stencil mask was observed, the defect image information was taken in, the image was appropriately converted into defect information for analysis purposes, then synthesized with the mask pattern of the stencil mask, and electron beam image simulation was used. It is possible to perform desired defect inspection and analysis.
[0025]
Further, a transfer electron beam image of the defect is generated by performing a transfer electron beam image generation simulation of the defect based on the analysis result of the defect obtained by the analysis means, and the generated transfer electron beam of the defect is stored in a database of the defect pattern. It has a second simulation means. Thus, the defect pattern can be stored in the database.
Further, there is provided data analysis processing means for performing data analysis processing of the transfer electron beam image of the defect obtained by the second simulation means.
[0026]
The stencil mask defect analysis method according to the present invention is a stencil mask defect analysis method for analyzing the effect of a stencil mask defect on a pattern transferred onto a wafer by electron beam projection lithography,
Observing a defect of the stencil mask in an electron beam image of the stencil mask transferred onto the wafer, and extracting the defect as defect image information;
Generating a transfer electron beam image of the stencil mask by performing a transfer electron beam image generation simulation based on the pattern data of the stencil mask and the CAD pattern data for producing the stencil mask;
Synthesizing a transfer electron beam image of a stencil mask having a defect from the defect pattern obtained from the defect pattern database and the transfer electron beam image of the stencil mask;
Analyzing the transferred electron beam image of the stencil mask having the synthesized defect and the defect image information to analyze the defect image information;
It is characterized by having.
[0027]
With the stencil mask defect analysis method according to the present invention, information such as the actual shape, size, and position information of a stencil mask defect can be captured with high accuracy.
By synthesizing a transfer electron beam image of a stencil mask having a defect from a defect pattern obtained from a defect pattern database and a transfer electron beam image of a stencil mask, systematic defect analysis can be performed quickly and easily. .
Furthermore, after performing the image conversion of the defect image as appropriate, by combining with the mask pattern of the stencil mask and performing an electron beam image simulation, systematically changing the defect shape and size in various ways is performed. Defect analysis can be performed quickly and easily.
[0028]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described specifically and in detail with reference to the accompanying drawings by way of example embodiments.
Example of embodiment of stencil mask defect analyzer
This embodiment is an example of an embodiment of a stencil mask defect analysis apparatus according to the present invention. FIG. 1 is a block diagram showing the configuration of a stencil mask defect analysis apparatus according to this embodiment, FIG. 2 is a block diagram showing the configuration of a defect observation unit, FIG. 3 is a block diagram showing the configuration of a defect analysis unit, and FIG. FIG. 5 is a block diagram showing a configuration of the CAD data simulation unit, and FIG. 5 is a block diagram showing a configuration of the transfer defect image data simulation unit.
As shown in FIG. 1, a defect analysis apparatus 10 according to the present embodiment captures and records defect information of a stencil mask, receives a defect information from the defect observation unit 12, and analyzes a defect. A unit 14, a CAD data simulation unit 16 for performing an electron beam image generation simulation based on the stencil mask pattern data and the CAD pattern data, and sending the result to the defect analysis unit 14, and a defect obtained from the defect analysis unit 14. And a transfer defect image data simulation unit 18 that saves the result in a database and sends the result to the defect analysis unit 14.
[0029]
As shown in FIG. 2, the defect observation unit 12 captures and records, as image data, a CCD light receiving unit 20 equipped with a CCD sensor and a stencil mask defect image obtained by the CCD light receiving unit 20, and stores the image data as a defect. An image data capturing / recording unit 22 that outputs to the image conversion processing unit 28 of the analysis unit 14 is provided.
The defect observation unit 12 irradiates the stencil mask 26 of the inspection object with an electron beam from the secondary electron gun 24 of the defect analyzer, receives an image of a defect of the stencil mask 26 as a transmission electron beam image, and receives the image. The image is captured and recorded as image data, and the image data is output to the image conversion processing unit 28 of the defect analysis unit 14.
[0030]
As shown in FIG. 3, the defect analysis unit 14 includes an image conversion processing unit 28, an image synthesis unit 30, an image comparison / analysis unit 32, a defect determination unit 34, a result output unit 36, and a defect analysis unit 38. And
[0031]
The image conversion processing unit 28 converts the image data of the defect so that the shape of the defect represented by the image data of the defect output from the defect observation unit 12 becomes a desired shape, and the image comparison / analysis unit 32 Output to Thereby, the defect shape can be converted into a desired shape and analyzed.
The image synthesizing unit 30 performs a stencil mask electron beam having a defect based on the transfer electron beam image of the stencil mask input from the CAD data simulation unit 16 and the defect pattern input from the transfer defect image data simulation unit 18. A line image (hereinafter, referred to as a defect stencil mask electron beam image) is synthesized and output to the image comparison / analysis unit 32.
The image comparison / analysis section 32 compares and analyzes the defect image data of the stencil mask subjected to the predetermined image conversion processing by the image conversion processing section 28 and the defect stencil mask electron beam image synthesized by the image synthesis section 30. Then, the analysis result is output to the defect determination unit 34.
[0032]
The defect determination unit 34 determines whether the defect based on the defect image data of the stencil mask is a killer defect based on the analysis result input from the image comparison / analysis unit 32. The defect image is analyzed in detail by the defect detail analysis unit 38. On the other hand, when the defect is a killer defect, the defect image data is output to the transfer defect image data simulation unit 44 of the transfer defect image data simulation unit 18.
Here, a killer defect refers to a defect that, when a mask pattern of a stencil mask is transferred to a wafer, the defect transferred together with the mask pattern affects the performance of a product such as a semiconductor device.
[0033]
The CAD data simulation unit 16 includes a CAD data section 40 and a CAD data simulation section (transfer electron beam image simulation section) 42 as shown in FIG.
The CAD data section 40 is a database storing pattern data of a stencil mask and CAD pattern data for producing a stencil mask. The CAD data simulation unit 42 performs a transfer electron beam image generation simulation based on the stencil mask pattern data and the CAD pattern data stored in the CAD data unit 40, generates a transfer electron beam image of the stencil mask, and performs defect analysis. The image is output to the image synthesizing unit 30 of the unit 14.
With the above configuration, the CAD data simulation unit 16 outputs the stencil mask electron beam image obtained by the simulation by the CAD data simulation unit 42 to the image synthesis unit 30 of the defect analysis unit 14.
[0034]
The transfer defect image data simulation unit 18 includes a defect transfer image data simulation unit 44, a defect transfer image conversion unit 46, an image synthesis / re-comparison unit 48, and a defect pattern database 50.
The defect transfer image data simulation unit 44 performs a transfer electron beam image generation simulation on the defect image data obtained from the defect determination unit 34 of the defect analysis unit 14, generates a defect transfer image, and outputs the defect transfer image to the defect transfer image conversion unit 46. At the same time, the defect pattern of the defect transfer image is output to the defect pattern database 50.
The defect transfer image conversion unit 46 performs image processing on the defect transfer image and outputs the processed image to the image synthesis / re-comparison unit 48. The image combining / re-comparing unit 48 outputs the defect transfer image output from the defect transfer image conversion unit 46 to the defect determination unit 34.
[0035]
With the above-described apparatus configuration, defect image information obtained by observing optical photomask defects is captured, appropriately converted into image defect information for analysis, and then synthesized with a mask pattern of a stencil mask. A desired defect inspection and analysis can be performed by using a line image simulation.
[0036]
Embodiment of a stencil mask defect analysis method
The present embodiment is an example of an embodiment in which a stencil mask defect analysis method according to the present invention is performed using the above-described stencil mask defect analysis apparatus 10.
The procedure of the stencil mask defect analysis method according to the present embodiment will be described with reference to FIGS.
First, in step 1, an electron beam is irradiated from the secondary electron gun 24 of the electron beam exposure apparatus to the stencil mask 26 of the object to be inspected, an image of a defect of the stencil mask 26 is received, and the received image is image data. As well as recording the image data and outputting the image data to the image conversion processing unit 28 of the defect analysis unit 14.
In step 2, the image data of the defect is converted by the image conversion processing unit 28 so that the shape of the defect represented by the image data of the defect output from the defect observation unit 12 becomes a desired shape.
[0037]
In step 3, a transfer electron beam image simulation is performed based on the stencil mask pattern data and the CAD pattern data stored in the CAD data unit 40 to generate a stencil mask electron beam image, and the image synthesis unit of the defect analysis unit 14 Output to 30.
In step 4, based on the transfer electron beam image of the stencil mask based on the electron beam image simulation result input from the CAD data simulation unit 16 and the defect pattern input from the transfer defect image data simulation unit 18, The stencil mask electron beam image having the following (hereinafter, referred to as a defect stencil mask electron beam image) is synthesized by the image synthesizing unit 30.
In step 5, the image comparing / analyzing unit 32 compares and analyzes the defect image data of the stencil mask subjected to the predetermined image conversion processing in step 2 and the defect stencil mask electron beam image synthesized in step 4.
[0038]
In step 6, based on the analysis result of step 5, the defect determination unit 34 determines whether the defect based on the defect image data of the stencil mask is a killer defect, and if not, the analysis result is output via the result output unit 36. The defect image is output and further analyzed in detail by the defect analysis unit 38. On the other hand, when the defect is a killer defect, the defect image data is output to the defect transfer image data simulation unit 44 of the transfer defect image data simulation unit 18.
In step 7, a transfer electron beam image generation simulation is performed on the defect image data output in step 6 to generate a defect transfer image, and the defect pattern of the defect transfer image is output to the defect pattern database 50.
In Step 8, the defect transfer image obtained in Step 7 is subjected to image processing. In Step 9, the defect transfer image subjected to image processing in Step 8 is returned to Step 6.
[0039]
In the stencil mask defect analysis method according to the present embodiment, information such as the actual shape, size, and position information of the stencil mask defect can be accurately captured. In addition, after performing the image conversion of the defect image as appropriate, by combining the mask image with the mask pattern of the stencil mask and performing an electron beam image simulation, the systematic system after variously changing the defect shape and size, etc. Defect analysis can be performed quickly and easily.
[0040]
Comparative Example of Stencil Mask Defect Analysis Apparatus of First Embodiment
This comparative example is a comparative example of the stencil mask defect analyzer 10 of the first embodiment, and FIG. 6 is a block diagram showing the configuration of the stencil mask defect analyzer of the comparative example.
The stencil mask defect analysis device 60 of the present comparative example includes a defect observation unit 12 having the same configuration as the defect observation unit 12 of the stencil mask defect analysis device 10 of the first embodiment, and a defect analysis unit 62.
[0041]
The defect analysis unit 62 includes an image processing unit 64, a CAD data unit 66, an image comparison unit 68, and a result output unit 70.
The image processing unit 64 converts the image data of the defect so that the shape of the defect represented by the image data of the defect output from the defect observation unit 12 becomes a desired shape, and outputs the image data to the image comparing unit 68. I do.
The CAD data section 66 is a database storing pattern data of the stencil mask and CAD pattern data for producing the stencil mask, and outputs necessary data to the image comparing section 68.
The image comparing unit 68 compares and analyzes the image data of the defect output from the image processing unit 64 with the pattern data of the stencil mask output from the CAD data unit 66, and analyzes the analysis result via the result output unit 70. Is output.
[0042]
However, the stencil mask defect analysis device 60 of the comparative example is a device that performs a defect analysis of the die database (Die to Database), and is a transfer defect image simulation of the stencil mask defect analysis device 10 of the present embodiment. -Since it does not include the unit 18, the image synthesizing unit 30, the transferred electron beam image simulation unit 42, etc., it is difficult to accumulate defect patterns, detect defects quickly and with high accuracy, and perform systematic analysis. It is.
[0043]
【The invention's effect】
According to the present invention, the first simulation means for generating a transfer electron beam image of the stencil mask by performing an electron beam image generation simulation based on the stencil mask pattern data and the like read from the storage means, and the defect read from the database Image combining means for combining a transfer electron beam image of a stencil mask having a defect based on a pattern and a transfer electron beam image of a stencil mask, image information of the defect extracted by the extraction means, and transfer of the stencil mask having the defect By providing analysis means for comparing and analyzing the electron beam image and outputting the analysis result of the defect, defect measurement and analysis can be performed without preparing an evaluation mask for defect transfer.
Further, it is possible to quantitatively quickly and easily measure and analyze what size, shape, and type of defect becomes a killer defect by using electron beam image simulation of the defect during defect inspection.
Further, by providing a defect pattern database, it becomes possible to accumulate a database of defects due to light or electron beam transmission and reflection images, and a correlation between a foreign substance and an actual transfer image, so that a criterion using the database can be obtained. It is possible to determine and quantify killer defects by setting and comparing data in a database with an inspection image.
[Brief description of the drawings]
FIG. 1 is a block diagram illustrating a configuration of a defect analysis device according to an embodiment.
FIG. 2 is a block diagram illustrating a configuration of a defect observation unit.
FIG. 3 is a block diagram illustrating a configuration of a defect analysis unit.
FIG. 4 is a block diagram showing a configuration of a CAD data simulation unit.
FIG. 5 is a block diagram illustrating a configuration of a transfer defect image data simulation unit.
FIG. 6 is a block diagram showing a configuration of a stencil mask defect analysis device of a comparative example.
[Explanation of symbols]
10: Defect analysis device of the embodiment, 12: Defect observation unit, 14: Defect analysis unit, 16: CAD data simulation unit, 18: Transfer defect image data simulation unit, 20: CCD light receiving unit, 22 image data capturing / recording unit, 24 secondary electron beam gun, 26 stencil mask, 28 image conversion processing unit, 30 image synthesis unit, 32 image comparison / analysis unit, 34 ... Defect determination unit, 36... Result output unit, 38... Defect analysis unit 40... CAD data unit 42... CAD data simulation unit (transfer electron beam image simulation unit) 44. Simulation unit 46 Defect transfer image conversion unit 48 Image synthesis / re-comparison unit 50 Defect pattern database 60 Reference example Defect analysis apparatus Tenshirumasuku, 62 ...... defect analysis unit, 64 ...... image processing unit, 66 ...... CAD data unit, 68 ...... image comparison unit, 70 ...... result output unit.

Claims (5)

A stencil mask defect analysis device for analyzing the effect of a stencil mask defect on a pattern transferred onto a wafer by electron beam projection lithography,
Extracting means for extracting image information of a stencil mask defect;
Storage means for storing stencil mask pattern data and CAD pattern data;
First simulation means for performing an electron beam image generation simulation based on the stencil mask pattern data and CAD pattern data read from the storage means to generate a transfer electron beam image of the stencil mask;
A database of stencil mask defect patterns,
Image combining means for combining a transfer electron beam image of a stencil mask having a defect based on the defect pattern read from the database and the transfer electron beam image of the stencil mask obtained by the first simulation means;
Analyzing means for comparing and analyzing the image information of the defect extracted by the extracting means and the transfer electron beam image of the stencil mask having the defect obtained by the image synthesizing means, and outputting an analysis result of the defect; A stencil mask defect analyzer. Image conversion for converting the image information of the defect so that the shape of the defect represented by the image information of the defect extracted by the extracting unit has a desired shape, and outputting the image information of the defect to the analyzing unit as image information of the defect The stencil mask defect analyzer according to claim 1, further comprising a processing unit. A transfer electron beam image of the defect is generated based on the analysis result of the defect obtained by the analysis unit to generate a transfer electron beam image of the defect, and the generated transfer electron beam of the defect is stored in a database of the defect pattern. 3. The stencil mask defect analysis apparatus according to claim 1, further comprising a second simulation unit that performs the simulation. The stencil according to any one of claims 1 to 3, further comprising data analysis processing means for performing data analysis processing of the transfer electron beam image of the defect obtained by the second simulation means. Mask defect analyzer. A stencil mask defect analysis method for analyzing the effect of a stencil mask defect on a pattern transferred onto a wafer by electron beam projection lithography,
Observing a defect of the stencil mask in the electron beam image of the stencil mask, and extracting the defect as defect image information;
Generating a transfer electron beam image of the stencil mask by performing a transfer electron beam image generation simulation based on the pattern data of the stencil mask and the CAD pattern data for producing the stencil mask;
Synthesizing a transfer electron beam image of a stencil mask having a defect from the defect pattern obtained from the defect pattern database and the transfer electron beam image of the stencil mask,
Analyzing the defect image information by comparing a transfer electron beam image of the stencil mask having the synthesized defect with the defect image information.

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