JP2004085870A - Mems element and optical attenuator, optical switch, and optical scanner all using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To control a MEMS element with low voltage in the MEMS element for optical control. <P>SOLUTION: A substrate 31 is provided with supporting parts 32a and 32b, and a diaphragm actuator 35 is freely vertically movably held. An optical mirror 39 is connected to it through a hinge 42. The optical mirror 39 is held freely turnably by the hinges 40 and 41 parallel to the boundary part with the diaphragm actuator. In such a manner, by attracting the diaphragm actuator 35 by electrostatic attractive force, the optical mirror 39 is tilted. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an MEMS element for optical control, and an optical attenuator, optical switch, and optical scanner using the same.
[0002]
[Prior art]
In recent years, with the development of optical communication technology, a MEMS (Micro Electro Mechanical System) element has attracted attention as an optical control element. Such a light control MEMS element has a mirror part in a part thereof, and basically changes a light reflection direction according to a voltage. Therefore, it is generally required that a MEMS element having a large-area mirror can be controlled at a low voltage and that the tilt angle is stable.
[0003]
FIG. 11 shows an example of a conventional MEMS element. In this MEMS device, as shown in a plan view in FIG. 11A and an end view in FIG. 11B, the lower electrode 12 is laminated only on the left central portion of the non-conductive substrate 11. Then, supporting portions 13 and 14 made of an oxide layer are provided at symmetrical positions in the center of the substrate 11. The supporting portions 13 and 14 are formed by laminating an oxide layer on the entire surface of the substrate 11 having the lower electrode 12 and etching by masking necessary portions at both ends of the substrate. An optical mirror 15 is formed on the upper surface of the oxide layer in a step before the etching. The optical mirror 15 has a region corresponding to the upper surfaces of the support portions 13 and 14, thin hinges 16 and 17 extending therefrom, and a flat plate portion. The surface of the flat plate portion facing the left lower electrode is used as the upper electrode portion 18, and the right portion is used as the mirror portion 19. The upper electrode section 18 is provided with a number of openings called etching holes 20. The etching hole not only promotes the penetration of the etching solution, but also functions to reduce the viscous resistance of air called squeeze damping during operation and to operate at high speed. After such an optical mirror 15 is formed, the oxide layer other than the support portions 13 and 14 is removed by etching, and the optical mirror 15 on the upper surface is supported only by the hinges 16 and 17. In the MEMS element thus configured, an electrostatic attraction is exerted by applying a voltage between the upper electrode portion 18 on the left side of the optical mirror 15 and the lower electrode 12. Then, the line connecting the centers of the hinges 16 and 17 serves as the rotation axis, and the optical mirror 15 can be tilted in the direction shown by the broken line in FIG.
[0004]
[Problems to be solved by the invention]
In such a conventional MEMS element, a rotation axis formed by the hinges 16 and 17 is defined as a Y axis, and a direction perpendicular to the Y axis is defined as X. Assuming that the electrostatic attractive force generated per unit length in the X-axis direction of the upper electrode portion 18 is F, the electrostatic attractive force F is given by the following equation.
F = ε ₀ aV ² / (2G ² ) (1)
Here, G is the gap between the upper electrode section 18 and the lower electrode 12, and a is the length of the upper electrode section 18 and the lower electrode 12 in the Y direction.
Next, when L is the length from the rotation axis to the position where the upper and lower electrodes on the left side are common, θ is the tilt angle, and θmax is the maximum tilt angle, θmax is approximately given by the following equation.
G = Ltan θmax
The component Ft acting as a rotational force when the optical mirror 15 is tilted is given by the following equation.
Ft = F · cos θ
The torque generated by this actuator is obtained by integrating the electrostatic attractive force Ft from 0 to L of the distance X, and is given by the following equation.
T = Ft · ^L 2/2
Therefore, by substituting this into the torque T, the driving torque T of the tilt mirror when the voltage V is applied to the MEMS element is given by the following equation.
T = Ft · ^L 2/2
= Ε ₀ aV ² cos θ / [4 sin ² (θmax)] (2)
[0005]
Here, the maximum tilt angle θmax, the drive voltage V, and the electrode width a are determined by restrictions such as the specifications of the MEMS element. The driving torque T is uniquely determined by the above-described equation (1) regardless of the electrode length L.
[0006]
Therefore, if the driving torque T is not a sufficient value, the actuator cannot secure a sufficient driving force. When the driving force is low, it is necessary to drive the hinge with a weaker suspension in order to obtain a desired tilt angle, but the tilt angle becomes unstable.
[0007]
The present invention has been made in view of such conventional problems, and a MEMS element capable of rotating a tilt mirror with a sufficient torque at a low driving voltage, an optical attenuator using the MEMS element, An object is to provide an optical switch and an optical scanner.
[0008]
[Means for Solving the Problems]
The invention of claim 1 of the present application relates to a diaphragm actuator constituting an upper electrode, an optical mirror connected to the diaphragm actuator via a hinge, and a substrate having a lower electrode provided at a position corresponding to the diaphragm actuator. And a support portion disposed on the substrate and holding both ends of a rotation axis of the optical mirror parallel to a boundary between the diaphragm actuator and the optical mirror via hinges. It is.
[0009]
According to a second aspect of the present invention, in the MEMS device of the first aspect, the moment of inertia between the diaphragm actuator and the optical mirror is substantially equal.
[0010]
According to a third aspect of the present invention, in the MEMS device of the first or second aspect, the substrate is made of a conductive material, and a through hole is provided in a portion of the substrate corresponding to a lower surface of the optical mirror. It is characterized by.
[0011]
The invention according to claim 4 of the present application provides an actuator in which one region is an upper electrode portion, the other region is a mirror portion, and an end near a boundary between the upper electrode portion and the mirror portion is a hinge portion that can be freely bent; A substrate having a lower electrode provided at a position corresponding to the upper electrode portion of the actuator; and a rotation axis of the mirror portion disposed on the substrate and parallel to a boundary between the upper electrode portion and the mirror portion of the actuator. And a support portion for holding both ends of the support member via a hinge.
[0012]
According to a fifth aspect of the present invention, in the MEMS element of the fourth aspect, the moment of inertia between the upper electrode portion of the actuator and the mirror portion is substantially equal.
[0013]
The invention according to claim 6 of the present application is directed to a substrate having an upper surface as an electrode, at least two supporting portions formed along opposing sides of the substrate, and a first and a second attached to the supporting portion. A frame-shaped upper electrode portion having hinges on both sides thereof, a diaphragm at the center of the upper electrode portion via a third hinge for holding a mirror portion inside the upper electrode portion, and the upper electrode portion provided on the substrate; And a support unit that holds both ends of a rotation axis of the mirror unit parallel to a boundary line between the mirror unit and the mirror unit via hinges.
[0014]
According to a seventh aspect of the present invention, in the MEMS device according to any one of the fourth to sixth aspects, the substrate is made of a conductive material, and a through hole is formed in a portion of the substrate facing the mirror portion. It is characterized by having been provided.
[0015]
According to an eighth aspect of the present invention, there is provided the MEMS device according to any one of the first to seventh aspects, a light incident portion for inputting light to a mirror portion of the MEMS device, and a light reflected by the mirror portion of the MEMS device. A voltage for changing the attenuation rate by changing the voltage applied to the MEMS element and continuously changing the reflection angle of the light incident on the MEMS element from the light incident section. And a control unit.
[0016]
According to a ninth aspect of the present invention, there is provided the MEMS device according to any one of the first to seventh aspects, a light incident portion for inputting light to a mirror portion of the MEMS device, and a light reflected by the mirror portion of the MEMS device. A light emitting portion that emits the reflected light, and a voltage applied to the MEMS element is changed to reflect light incident on the MEMS device from the light incident portion and to enter the light emitting portion and not enter the light. And a voltage control unit for switching to a state.
[0017]
According to a tenth aspect of the present invention, there is provided the MEMS element according to any one of the first to seventh aspects, a light incident part for inputting light to a mirror part of the MEMS element, and a voltage applied to the MEMS element. And a voltage controller for continuously changing the reflection angle of light incident on the MEMS element from the light incident part.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, an embodiment of the present invention will be described. FIG. 1 is a plan view of a MEMS device according to a first embodiment of the present invention, FIG. 2A is a longitudinal sectional view in a state where no voltage is applied, and FIG. 2B is a longitudinal sectional view in a state where a voltage is applied. FIG. 2 (c) is an enlarged sectional view showing a part thereof. As shown in these figures, supporting portions 32a and 32b for supporting a diaphragm are formed on a substrate 31 along two sides thereof. Then, the lower electrode 33 is formed in a rectangular region between the support portions 32a and 32b. A pair of support portions 34a and 34b are formed on the substrate 31 at symmetrical positions at a fixed distance from the pair of support portions 32a and 32b. Then, a diaphragm actuator 35 is formed parallel to the substrate 31 at a predetermined interval g from the substrate 31. As shown, the diaphragm actuator 35 is vertically movably held between support portions 32a and 32b located at symmetric positions via hinges 36 and 37. The diaphragm actuator 35 has a large number of etching holes 38 used at the time of manufacture as shown in the figure, and is configured as an upper electrode above the lower electrode 33. On the same plane as the diaphragm actuator 35, an optical mirror 39 formed by depositing gold or the like on a silicon layer is provided. The optical mirror 39 is held by a pair of support portions 34a and 34b via hinges 40 and 41 as shown in the figure, and is connected to the diaphragm actuator 35 by a hinge 42. The hinges 40 and 41 are provided in parallel with the boundary between the diaphragm actuator 35 and the optical mirror 39, and serve as a rotation axis of the optical mirror 39. The connecting hinge 42 provided between the optical mirror 39 and the diaphragm actuator 35 is a flexible connecting member made of polysilicon, and the angle between the diaphragm actuator 35 and the optical mirror 39 can be arbitrarily determined. .
[0019]
When a voltage is applied between the diaphragm actuator 35 serving as the upper electrode and the lower electrode 33, as shown in FIG. 2B, the diaphragm actuator 35 is attracted by electrostatic attraction and descends. At this time, since the optical mirror 39 is held by the hinge 42 at the left end and the mirror supporting portions 34a and 34b, a downward force is applied as shown in FIGS. 2B and 2C. Accordingly, the center points of the supporting portions 34a and 34b function as the rotation axis A, and the center of the support parts 34a and 34b is tilted about the rotation axis A, so that the optical mirror 39 jumps up as shown in FIGS.
[0020]
In this case, the force F acting on the diaphragm actuator 35 is given by the following equation.
F = ε ₀ SV ² / 2g ² (3)
Here, S is an area common to the lower electrode 33 and the upper electrode section 35, V is an applied voltage, and g is a gap between the upper electrode section 35 and the lower electrode 33.
[0021]
The force acting on the optical mirror 39 by this F becomes ηF, where η represents the ratio of the downward force applied to the diaphragm actuator 35 to the optical mirror 39. A force Ft acting as a rotational force when the optical mirror 39 rotates by the angle θ is given by the following equation.
Ft = η · F · cos θ
This ratio η can be adjusted by the ratio of the suspension of the hinge connecting the diaphragm actuator 35 and the optical mirror. The point at which the upper and lower plates come into contact is the maximum rotation angle at which the optical mirror 39 rotates. Therefore, assuming that the distance from the center of rotation of the optical mirror 39 to the connection between the diaphragm actuator and the optical mirror is L and the maximum rotation angle θ is θmax, the distance g is given by the following equation.
g = Lsin θmax
Therefore, the torque T is given by the following equation.
T = η · ε ₀ SV ² · cos θ / [ ² gsin (θmax)] (4)
Therefore, the torque is inversely proportional to the gap g, and the torque can be controlled by selecting the gap g. Thus, a desired torque can be set at the time of design by arbitrarily selecting the gap g.
[0022]
Here, the optical mirror 39 is rotated about the hinges 40, 41 of the support portions 34a, 34 as a rotation axis, but by making the right and left moments of inertia coincide at this time, the optical mirror 39 is hardly affected by an external impact. be able to.
[0023]
Next, FIG. 3 is a plan view showing a MEMS device according to Embodiment 2 of the present invention, FIG. 4A is a longitudinal sectional view in a state where no voltage is applied, and FIG. 4B is a longitudinal sectional view in a state where a voltage is applied. It is. In this embodiment, the diaphragm actuator of the first embodiment and the optical mirror are integrated to form an actuator 45. Other configurations are the same as those of the first embodiment, and thus the same reference numerals are given and the detailed description is omitted. In this embodiment, the actuator 45 includes an upper electrode portion 45A on the upper surface of the lower electrode 33 and a mirror portion 45B connected to the support portions 34a and 34b by hinges 40 and 41 via a connection portion 45C as shown in the figure. It is integrated. The connecting portion 45C is formed so that the film pressure is reduced to facilitate rotation, and the connecting portion 45C can be freely bent. Such an actuator can be made of silicon. The mirror is formed on the upper surface of the mirror part 45B by depositing gold or the like. Also in this case, as shown in FIG. 4B, an electrostatic attraction is exerted by applying a voltage between the upper electrode portion 45A and the lower electrode 33. Therefore, the upper electrode portion 45A is sucked downward, and the mirror portion 45B can be tilted based thereon.
[0024]
Next, FIG. 5 is a plan view showing a MEMS device according to a third embodiment of the present invention, FIG. 6A is a longitudinal sectional view in a state where no voltage is applied, and FIG. 6B is a longitudinal section in a state where a voltage is applied. FIG. As shown in these figures, the substrate 51 is a rectangular member. The substrate 51 is provided with support portions 52 and 53 for holding the diaphragm in the left and right longitudinal directions. A lower electrode 54 having a substantially square frame shape is provided at the center of the substrate 51. The support parts 52 and 53 hold a diaphragm 57 at the center from the left and right via first and second hinges 55 and 56. The diaphragm 57 is a substantially square silicon thick film plate, and includes a frame-shaped upper electrode portion 58, a third hinge 59 inside the frame-shaped upper electrode portion 58, and a square mirror portion 60 through the hinge 59. have. The mirror section 60 is formed by depositing gold or the like on the surface and has an upper surface serving as a mirror surface. Only the left side of the mirror section 60 is connected to the frame-shaped upper electrode section 58 of the diaphragm by a hinge 59. The mirror section 60 is connected to support sections 63 and 64 via thin hinges 61 and 62 as shown. The support portions 63 and 64 are formed so as to protrude from two places on the substrate 51. Also in this case, the side of the mirror section 60 that contacts the hinge 59 is parallel to the rotation axis formed by the thin hinges 61 and 62. The lower portion of the mirror section 60 faces a non-electrode portion inside the frame-shaped lower electrode 54 of the substrate. The upper electrode portion 58 has a large number of etching holes 65 for etching a sacrificial layer below the upper electrode portion.
[0025]
In the MEMS substrate thus configured, when no voltage is applied, the diaphragm 57 including the mirror unit 60 is in a state parallel to the upper surface of the substrate 51 as shown in FIG. When a voltage is applied between the lower electrode 54 and the upper electrode portion 58 of the diaphragm 57, an electrostatic attraction acts on the upper electrode portion 58 of the diaphragm 57 as shown in FIG. At this time, since the portion corresponding to the mirror unit 60 is not an electrode, no electrostatic attraction works. Accordingly, only the frame-shaped upper electrode portion 58 of the diaphragm 57 descends so as to approach the substrate 51 almost in parallel with the substrate surface as shown in FIG. 6B. However, since the mirror portion 60 is held at a certain height from above the substrate 51 by the thin hinges 61 and 62, the mirror portion 60 has one end jumping around the hinges 61 and 62 as shown in FIG. To tilt. Also in this case, similarly to the first and second embodiments, an arbitrary torque can be obtained by setting a gap between the upper electrode portion and the substrate 51. Since the diaphragm 57 moves substantially parallel to the substrate 51, an effect is obtained that a downward force can be efficiently generated at a low voltage.
[0026]
In this embodiment, the supporting portions are provided on two opposite sides of the diaphragm, but the supporting portions may be provided on four sides.
[0027]
Next, a MEMS device according to a fourth embodiment of the present invention will be described. FIG. 7 is a plan view of the MEMS element according to the fourth embodiment, FIG. 8A is a longitudinal sectional view in a state where no voltage is applied, and FIG. 8B is a longitudinal sectional view in a state where a voltage is applied. The same parts as those in the third embodiment are denoted by the same reference numerals, and detailed description is omitted. In this embodiment, the substrate of the third embodiment is a conductive substrate 66, and a portion corresponding to the mirror portion 60 inside the substrate is a through hole. Therefore, the lower electrode 54 becomes unnecessary, and the entire substrate 66 becomes a lower electrode. Other configurations are the same as those of the third embodiment. Also in this case, since no electrode is formed at the portion corresponding to the mirror portion, when a voltage is applied, only the frame-shaped upper electrode portion descends as shown in FIG. The part can be tilted.
[0028]
In the present embodiment, the case where the through hole is provided in the substrate of the third embodiment is described. However, the same through hole may be provided in the first and second embodiments. That is, a through hole may be provided in a portion facing the diaphragm actuator 35 of the first embodiment, or only the mirror portion 45b of the second embodiment may be a through hole.
[0029]
Next, an optical attenuator using the MEMS device according to the present embodiment will be described. FIG. 9 is a sectional view showing the optical attenuator. In this figure, a capillary 71 holds an optical fiber 72 for incidence and an optical fiber 73 for emission, and a lens holder 74 is provided at the tip thereof. An aspheric lens 75 as shown in the figure is provided at a substantially central portion of the lens holder 74. The aspheric lens 75 converts the light emitted from the optical fiber 72 into substantially parallel light and focuses the reflected light on the optical fiber 73. Here, the capillary 71, the optical fiber 72, the lens holder 74, and the aspherical lens 75 constitute a light incident portion that makes light incident on the mirror portion of the MEMS element, and the capillary 71, the optical fiber 73 for emission, and the lens holder 74. The aspheric lens 75 constitutes a light emitting unit that emits light reflected by the mirror unit of the MEMS element. On the optical axis of the lens holder 74, a MEMS element 76 for light control is arranged. The MEMS element 76 is the MEMS element according to any one of the above-described first to third embodiments, and includes a voltage control unit 77 that supplies a variable voltage to the lower electrode substrate and the upper electrode unit.
[0030]
If no voltage is applied to the MEMS element 76, the light incident from the optical fiber 72 is incident on the mirror portion of the MEMS element 76 as parallel rays by the aspheric lens 75 of the lens holder 74. This light is reflected as it is, and again guided through the aspheric lens 75 to the optical fiber 73 for emission. Here, when a voltage is applied between the upper electrode and the lower electrode, the mirror is tilted as described above, and the peak position at which the reflected light enters the output optical fiber changes. Therefore, the level at which the reflected light is incident on the optical fiber 73 can be continuously changed by gradually changing the voltage and continuously changing the tilt angle of the mirror. Therefore, the amount of light attenuation can be changed by voltage control.
[0031]
By switching between a state in which no voltage is applied to the MEMS element and a state in which a predetermined voltage is applied by switching with the same structure, a first state in which almost 100% of reflected light is obtained, and a state in which reflected light is emitted Optical switch that switches to the second state in which the light does not enter the optical fiber 73 for use.
[0032]
This MEMS element can also be used as an optical scanner used for various applications such as a laser scanning microscope. FIG. 10 is a diagram illustrating an example of the optical scanner. In the figure, an optical fiber 81 guides light, a collimating lens 82 is provided on the optical axis, and the MEMS according to any one of the above-described first to third embodiments is directed from an angle of about 45 °. It leads to the element 83. The optical fiber 81 and the collimating lens 82 are light incident portions for inputting the optical fiber to the MEMS element. Further, the MEMS element 83 is provided with a voltage control section 84 for applying a continuously changing voltage. In this way, the incident light can be scanned at a desired speed by changing the voltage of the voltage control unit 84 in various waveforms such as a sine waveform and a sawtooth waveform.
[0033]
【The invention's effect】
As described in detail above, according to the present invention, an arbitrary torque can be obtained by appropriately setting the interval between the diaphragm and the substrate that moves up and down substantially in parallel with the substrate. Therefore, an effect is obtained that a desired tilt angle can be obtained by lowering the voltage. In the third and seventh aspects, since the substrate is made of a conductive member, there is no need to separately provide a lower electrode, and the substrate can be manufactured by a three-layer SIO process, and the manufacturing process can be simplified. Further, an optical attenuator, an optical switch and an optical scanner can be realized by using the MEMS element.
[Brief description of the drawings]
FIG. 1 is a plan view showing a structure of a MEMS device according to a first embodiment of the present invention.
2A is a longitudinal sectional view of a MEMS device according to the present embodiment, FIG. 2B is a longitudinal sectional view when a voltage is applied to the present embodiment, and FIG. 2C is an enlarged sectional view of a part thereof; It is.
FIG. 3 is a plan view showing a structure of a MEMS device according to a second embodiment.
4A is a longitudinal sectional view of the MEMS device according to the present embodiment, and FIG. 4B is a longitudinal sectional view when a voltage is applied to the present embodiment.
FIG. 5 is a plan view of a MEMS device according to a third embodiment of the present invention.
6A is a longitudinal sectional view of the MEMS device according to the present embodiment, and FIG. 6B is a longitudinal sectional view when a voltage is applied to the present embodiment.
FIG. 7 is a plan view of a MEMS device according to a fourth embodiment of the present invention.
8A is a longitudinal sectional view of a MEMS device according to the present embodiment, and FIG. 8B is a longitudinal sectional view when a voltage is applied to the present embodiment.
FIG. 9 is a sectional view showing the structure of an optical attenuator and an optical switch using the MEMS device according to the present embodiment.
FIG. 10 is a schematic diagram showing an optical scanner using a MEMS device according to an embodiment of the present invention.
11A is a plan view showing a structure of a conventional MEMS device, and FIG. 11B is an end view thereof.
[Explanation of symbols]
31, 51, 66 Substrate 32a, 32b, 34a, 34b, 52, 53 Support 35 Diaphragm actuator 36, 37, 40, 41, 42, 55, 56, 61, 62 Hinge 39 Optical mirror 45 Actuator 45A, 58a Upper electrode Parts 45B, 60 Mirror part 54 Lower electrode 57 Diaphragm 67 Through hole 71 Capillary 72, 73, 81 Optical fiber 74 Lens holding part 75 Aspherical lens 76, 83 MEMS element 77, 84 Voltage control part 82 Collimating lens

Claims (10)

A diaphragm actuator constituting the upper electrode;
An optical mirror connected to the diaphragm actuator via a hinge, a substrate having a lower electrode provided at a position corresponding to the diaphragm actuator,
A MEMS element, comprising: a support portion disposed on the substrate and holding both ends of a rotation axis of the optical mirror parallel to a boundary between the diaphragm actuator and the optical mirror via hinges. . 2. The MEMS device according to claim 1, wherein the moment of inertia between the diaphragm actuator and the optical mirror is substantially equal. 3. The MEMS device according to claim 1, wherein the substrate is made of a conductive material, and a through hole is provided in a portion of the substrate corresponding to a lower surface of the optical mirror. An actuator in which one region is an upper electrode portion, the other region is a mirror portion, and an end near a boundary between the upper electrode portion and the mirror portion is a hinge portion that can be freely bent;
A substrate having a lower electrode provided at a position corresponding to the upper electrode portion of the actuator,
And a support portion disposed on the substrate and holding both ends of a rotation axis of the mirror portion parallel to a boundary between the upper electrode portion and the mirror portion of the actuator via hinges. MEMS element. 5. The MEMS device according to claim 4, wherein the moment of inertia between the upper electrode portion of the actuator and the mirror portion is substantially equal. A substrate having an upper surface as an electrode,
At least two support portions formed along opposing sides of the substrate;
A frame-shaped upper electrode portion having first and second hinges attached to the support portion on both sides, and a diaphragm for holding a mirror portion inside the upper electrode portion via a third hinge at the center thereof. When,
A MEMS provided on the substrate, the MEMS comprising: a support section that holds both ends of a rotation axis of a mirror section parallel to a boundary between the upper electrode section and the mirror section via hinges. element. The MEMS device according to claim 4, wherein the substrate is made of a conductive material, and a through hole is provided in a portion of the substrate facing the mirror portion. A MEMS device according to any one of claims 1 to 7,
A light incidence part for entering light into a mirror part of the MEMS element;
A light emitting unit that emits light reflected by the mirror unit of the MEMS element;
A voltage control unit that changes a voltage applied to the MEMS element, and continuously changes a reflection angle of light incident on the MEMS element from the light incident unit, thereby changing an attenuation rate. And an optical attenuator. A MEMS device according to any one of claims 1 to 7,
A light incidence part for entering light into a mirror part of the MEMS element;
A light emitting unit that emits light reflected by the mirror unit of the MEMS element;
A voltage control unit that changes a voltage applied to the MEMS element, reflects light incident on the MEMS element from the light incident unit, and switches between a state of entering the light emitting unit and a state of not entering light. An optical switch, comprising: A MEMS device according to any one of claims 1 to 7,
A light incidence part for entering light into a mirror part of the MEMS element;
An optical scanner, comprising: a voltage controller that changes a voltage applied to the MEMS element and continuously changes a reflection angle of light incident on the MEMS element from the light incident part.

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