JP2004079450A - Cold cathode light emitting element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cold cathode light emitting element provided with a gate electrode construction not discharging any gas inside a cold cathode light emitting element container, in which the distance between the gate electrode and a cathode electrode wiring layer is uniform and the mesh shape of an opening part can be made extremely fine. <P>SOLUTION: A plurality of bending parts 22 are provided on both sides of a long side of the gate electrode 21. These bending parts 22 have the same film thickness as the gate electrode 21 and can be bent approximately 180° inside with the vicinity of the border with the gate electrode 21 as the starting point. The bending parts 22 are provided in positions in which the meshed openings 23 and a frit holes 24 provided on the gate electrode 21 are not sealed when bent. Furthermore, the length (L1) of the bending part 22 is half of the width of the gate electrode 21 (L2), and the bending part 22 forms a leg part of the gate electrode 21 with height which is the same as the thickness of the film of the bending part 22 without overlapping with each other. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a flat panel display device, and more particularly to a cold cathode light emitting device which emits light by using an electron source.
[0002]
[Prior art]
2. Description of the Related Art In recent years, research and development of flat panel display devices have become active, and in particular, an FED (Field Emission Display) using a field emission type cold cathode arranged in a plane as an electron source has attracted attention. This is because they have higher luminance, higher contrast, wider viewing angle, and lower power consumption than other flat panel display devices such as LCD and PDP.
[0003]
Further, as a material promising as an electron source of the FED, there is a carbon nanotube (hereinafter also referred to as CNT). This is because the CNT has a high electron emission capability and can form an electron source by a printing process, so that the manufacturing cost can be reduced.
[0004]
FIG. 9 shows a cross-sectional view of the cold cathode light emitting device of the prior invention. In FIG. 9, the front glass 101 and the rear glass 102 are arranged so as to face each other, and the front glass 101 and the rear glass 102 form an outer container that maintains a certain space by the spacer glass 103. Note that the front glass 101 and the rear glass 102 and the spacer glass 103 are joined by a low-melting glass 104. Further, an exhaust hole for evacuating the inside of the container is provided in the rear glass 102, and a chip glass tube 105 is attached to this hole. A plurality of getters 106 are provided in the chip glass tube 105 to maintain a vacuum in the container.
[0005]
On the front glass 101 in the container, red, blue, and green phosphors 107 are formed in a matrix, and an anode 108 of an aluminum back film is formed thereon to form a light emitting unit. A voltage is supplied to the anode 108 from an anode lead wire 109 drawn out of the chip glass tube 105 through the exhaust hole.
[0006]
On the other hand, a cathode electrode wiring layer 110 and a gate electrode wiring layer 111 are formed on the rear glass 102 in the container so as to correspond to the anode 108. On the cathode electrode wiring layer 110, a cold cathode electron source 112 using CNT as a cold cathode material is formed to form an electron emission portion. Further, an insulating rib 113 is formed on the rear glass 102 along the cathode electrode wiring layer 110.
[0007]
On the insulating rib 113, a gate electrode 114 fixed with low-melting glass is provided. The gate electrode 114 is a band-shaped metal plate, and a plurality of openings formed in a mesh shape are provided on the metal plate at positions corresponding to the cold cathode electron sources 112. The voltage supplied from the cathode / gate electrode terminal 115 is applied to the cold cathode electron source 112 and the gate electrode 114 via the cathode electrode wiring layer 110 and the gate electrode wiring layer 111.
[0008]
Next, the operation principle of the cold cathode light emitting device will be described. When a high voltage is applied to the anode 108 and a voltage is applied so that the gate electrode 114 has a positive potential with respect to the cathode electrode wiring layer 110, the cold cathode electron source 112 formed on the cathode electrode wiring layer 110 Electrons are emitted. The emitted electrons are provided in the gate electrode 114, pass through the opening, are accelerated toward the anode, and collide with the phosphor 107. The collided phosphor 107 is excited by electrons to emit light.
[0009]
In the case of a large display device, the above-described cold cathode light emitting elements are arranged in a matrix. At this time, a power supply and a circuit device for driving the cold cathode light emitting elements are provided for each set of a small number of cold cathode light emitting elements.
[0010]
The technology described above is introduced in, for example, Patent Document 1.
[0011]
[Patent Document 1] JP-A-2002-25476
[Problems to be solved by the invention]
In the cold cathode light emitting device described in the related art, in order to provide the gate electrode 114 on the cold cathode electron source 112, an insulating rib 113 is provided to support the gate electrode 114. Since the distance between the gate electrode 114 and the cathode electrode wiring layer 110 is a factor that affects the characteristics of the cold cathode light emitting device, it is necessary to use an insulating rib using a filler such as glass having high heat resistance. there were. However, since the film quality of the rib is porous with many gaps, a large amount of gas is adsorbed on the rib, and the gas is released into the container of the cold cathode light emitting device to lower the degree of vacuum in the container. . Therefore, there is a problem that the emission life from the cathode may be impaired.
[0012]
As a method for avoiding the above problem, as shown in FIG. 10, there is a method of half-etching a gate electrode substrate 116 as a metal plate to form an insulated space between the gate electrode substrate 116 and a cold cathode electron source. That is, the gate electrode structure has a single gate electrode substrate 116 provided with legs for supporting the gate electrode and a mesh-shaped opening.
[0013]
However, in this half-etching process, variations in the etching depth occur for each position in the gate electrode and for each production lot. Here, the distance between the gate electrode 114 and the cathode electrode wiring layer 110 in the above-described gate electrode structure depends on the accuracy of the half-etching of the legs supporting the gate electrode. Therefore, the distance between the gate electrode 114 and the cathode electrode wiring layer 110 becomes uneven. Therefore, there is a problem that the electric field strength between the gate electrode 114 and the cold cathode electron source 112 becomes non-uniform, causing a variation in luminance.
[0014]
In addition, when a mesh-shaped opening is formed after half-etching a leg supporting a gate electrode, a mesh-shaped opening is formed as compared with a case where a mesh-shaped opening is formed from a single gate electrode substrate having a uniform thickness. Cannot be miniaturized. Therefore, the transmittance of the electrons passing through the opening cannot be increased, and there is a problem that the brightness is reduced.
[0015]
Therefore, the present invention provides a gate electrode structure that does not release gas into the container of the cold cathode light emitting element, has a uniform distance between the gate electrode and the cathode electrode wiring layer, and can make the mesh shape of the opening fine. An object of the present invention is to provide a cold cathode light emitting device having the following.
[0016]
[Means for Solving the Problems]
A solution according to claim 1 of the present invention comprises an opposed first and second substrate having a space evacuated to vacuum, and an anode and an anode disposed at predetermined positions on the space side on the second substrate. A light emitting unit having a phosphor disposed thereon, an electron emitting unit disposed at a position facing the light emitting unit on the space side on the first substrate, and emitting electrons when a predetermined potential is applied; A plurality of bent portions are bent substantially 180 degrees inward to form legs for the first substrate, are disposed on the first position substrate, and have openings at positions corresponding to the electron emission portions. Having a gate electrode.
[0017]
According to a second aspect of the present invention, there is provided a cold cathode light emitting device according to the first aspect, wherein the gate electrode has a plurality of bent portions only on one long side of the gate electrode.
[0018]
According to a third aspect of the present invention, there is provided a cold cathode light emitting device according to the first aspect, wherein the gate electrode has a plurality of bent portions on both sides of a long side of the gate electrode.
[0019]
According to a fourth aspect of the present invention, there is provided the cold cathode light emitting device according to the third aspect, wherein the gate electrode has a plurality of bent portions bent approximately 180 degrees inward so as to overlap with each other. To form the legs.
[0020]
According to a fifth aspect of the present invention, there is provided a cold cathode light emitting device according to any one of the first to fourth aspects, wherein the plurality of bent portions are provided with cuts at bending start points.
[0021]
A solution according to claim 6 of the present invention is the cold cathode light emitting device according to any one of claims 1 to 5, wherein the gate electrode is a 426 alloy or a 50-50 alloy, and the first substrate is It is a white plate glass.
[0022]
According to a seventh aspect of the present invention, there is provided a cold cathode light emitting device according to any one of the first to fifth aspects, wherein the electron emission portion includes a carbon-based material containing carbon nanotubes or diamond as a cold cathode material. Is used.
[0023]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be specifically described with reference to the drawings showing the embodiments.
[0024]
(Embodiment 1)
FIG. 1 shows a cross-sectional view of the cold cathode light emitting device according to the present embodiment. In FIG. 1, the front glass 1 and the rear glass 2 are arranged so as to face each other, and the front glass 1 and the rear glass 2 form an outer container that maintains a certain space by the spacer glass 3. The front glass 1 and the rear glass 2 and the spacer glass 3 are joined by a low-melting glass 4.
[0025]
Since the inside of the container needs to be evacuated, the rear glass 2 is provided with an exhaust hole 5. In order to exhaust the gas in the container, the gas is exhausted from the chip glass tube 6 attached to the exhaust hole 5, and then the chip glass tube 6 is sealed. Note that a plurality of getters 7 are provided in the chip glass tube 6, and the gas generated after exhausting the gas in the container is adsorbed to maintain the vacuum in the container.
[0026]
Next, red, blue and green phosphors 8 are formed in a matrix on the front glass 1 in the container, and an anode 9 of an aluminum back film is formed thereon to form a light emitting portion. . A voltage is supplied to the anode 9 from an anode lead wire 10 which is drawn out of the chip glass tube 6 through the exhaust hole 5 to the outside.
[0027]
On the other hand, on the back glass 2 in the container, the cathode electrode wiring layer 11 and the gate electrode wiring layer 12 are formed corresponding to the anode 9. Further, on the cathode electrode wiring layer 11, a cold cathode electron source 13 using CNT (Carbon Nanotube) as a cold cathode material is formed to form an electron emission portion. In order to supply a voltage to the cathode electrode wiring layer 11 and the gate electrode wiring layer 12, a cathode / gate electrode terminal 14 is embedded in a predetermined position in the rear glass 2. The structure of the cold cathode light emitting device described above is basically the same as that shown in FIG.
[0028]
However, in the cold cathode light emitting device of the present embodiment, the structure of the gate electrode 21 is different from the conventional technology. The bent portion 22 of the gate electrode 21 serves as a leg for the back glass 2 instead of the insulating rib, and keeps the distance between the gate electrode 21 and the cathode electrode wiring layer 11 constant. The structure of the gate electrode 13 according to the present embodiment will be described below. In the case of a large display device, the above-described cold cathode light emitting elements are arranged in a matrix. At this time, a power supply and a circuit device for driving the cold cathode light emitting elements are provided for each set of a small number of cold cathode light emitting elements.
[0029]
FIG. 2 illustrates a part of the gate electrode according to the present embodiment. FIG. 2A shows a plan view before the plurality of bent portions 22 are still bent. A plurality of bent portions 22 are provided on both sides of the long side of the gate electrode 21. The bent portion 22 has the same thickness as the gate electrode 21, and is bent approximately 180 degrees inward starting from the vicinity of the boundary with the gate electrode 21. FIG. 2B is a plan view after the plurality of bent portions 22 are bent. In FIG. 2B, the bent portion 22 is bent so as to be below the gate electrode 21. Therefore, the bent portion 22 is represented by a wavy line in FIG.
[0030]
The bent portion 22 is provided at a position that does not block the mesh-like opening 23 and the frit hole 24 provided in the gate electrode 21 when bent. The length (L1) of the bent portion 22 is half the width (L2) of the gate electrode 21. Therefore, when bent from both sides, the bent portions 22 form the legs of the gate electrode 21 having a height equal to the thickness of the bent portion 22 (same as the thickness of the gate electrode 21) without overlapping each other. .
[0031]
Therefore, the distance between gate electrode 21 and cathode electrode wiring layer 11 can be kept constant. Note that the length (L1) of the bent portion 22 does not necessarily need to be half the width (L2) of the gate electrode 21, and the bent portion 22 does not overlap when bent, so that the gate electrode 21 can be supported. The length may be equal to or less than half the width (L2) of the gate electrode 21.
[0032]
The bent portion 22 is bent approximately 180 degrees inward starting from the vicinity of the boundary with the gate electrode 21. Due to this bending, a springback is generated in the bent portion 22 so as to return to the original position. It is considered that this springback has an effect on keeping the distance between the gate electrode 21 and the cathode electrode wiring layer 11 constant. However, since a cut (not shown) is provided at the bending start point of the bent portion 22 by half-etching, the influence of the springback can be reduced. Note that the shape and position of the cut provided at the bending start point are appropriately determined in consideration of the material and shape of the bent portion 22. Further, when the gate electrode 21 is fixed to the rear glass 2 with the low melting point glass 4, the jig is used while pressing the gate electrode 21 in the direction of the rear glass 2, so that the floating of the gate electrode 21 due to springback can be prevented. it can.
[0033]
If the coefficient of thermal expansion between the gate electrode 21 and the rear glass 2 is different, the gate electrode 21 peels off or warps from the rear glass 2. Therefore, it is necessary to use materials having the same coefficient of thermal expansion. However, when the rear glass 2 is a white plate glass, the material of the gate electrode 21 is preferably a 426 alloy or a 50-50 alloy. This is because the 426 alloy and the 50-50 alloy have almost the same coefficient of thermal expansion as the white sheet glass. Here, the 426 alloy is an alloy of 42% nickel, 6% chromium, and 52% iron, and the 50-50 alloy is an alloy of 50% nickel and 50% iron.
[0034]
Further, the driving voltage of the cold cathode light emitting device is determined by the distance between the gate electrode 21 and the cathode electrode wiring layer 11, and the shorter the distance between the gate electrode 21 and the cathode electrode wiring layer 11, the lower the driving voltage. Therefore, in the present embodiment, the driving voltage of the cold cathode light emitting element is determined by the thickness of the bent portion 22 (gate electrode 21). If a 426 alloy is used as the material of the bent portion 22 (gate electrode 21), the minimum thickness of the commercially available one is 30 μm, so the distance between the gate electrode 21 and the cathode electrode wiring layer 11 should also be about 30 μm. Can be.
[0035]
Next, a manufacturing method until the gate electrode 21 according to the present embodiment is incorporated into the back glass 2 will be described below. FIG. 3 shows the gate electrode before being incorporated into the back glass 2. These gate electrodes 21 are commonly connected to a reinforcing plate 26 via a bridge 25. With such a configuration, a plurality of gate electrodes 21 can be simultaneously incorporated into rear glass 2.
[0036]
The gate electrode 21 shown in FIG. 3 is formed by the following method. First, one metal plate of 426 alloy is etched in the shape of the gate electrode 21 which is commonly connected to the reinforcing plate 26 by the bridge 25 using lithography technology. At this time, the bent portion 22 has not been bent yet, and is in a state as shown in FIG. Next, a mesh-shaped opening 23 and a frit hole 24 are formed at predetermined positions of the gate electrode 21 by etching using a lithography technique. Further, a cut (not shown) is formed by half-etching at the starting point of the bent portion 22 by bending, and the bent portion 22 is bent inward by approximately 180 degrees using a mold or the like.
[0037]
In addition, in FIG. 3, the bent part 22 is shown by the wavy line. In the gate electrode structure shown in FIG. 10, the mesh-shaped openings are formed after forming the legs of the gate electrode by half-etching the gate electrode substrate 116 having a thickness of 100 μm and forming the gate electrode legs. The hole diameter of the mesh-shaped opening was 100 μm, and the hole pitch could be processed only to about 200 μm. However, in the gate electrode 21 of the present embodiment, since half etching is not required and the film thickness can be reduced to 30 μm, the hole diameter of the mesh-shaped opening is 50 μm and the hole pitch is as fine as about 100 μm. Can be processed. As a result, the aperture ratio of the mesh-shaped opening increases, and the transmittance of electrons improves.
[0038]
Next, FIG. 4 shows a plan view of the back glass according to the present embodiment. First, a cathode electrode wiring layer 11 and a gate electrode wiring layer 12 are formed on the rear glass 2 in a stripe shape. As a method of forming the cathode electrode wiring layer 11 and the gate electrode wiring layer 12, an electrode film is formed by CVD (Chemical Vapor Deposition) or the like, and the cathode electrode wiring layer 11 and the gate electrode wiring layer 12 are formed in a stripe shape by a lithography technique. There are a forming method and a printing method.
[0039]
Next, CNTs serving as the cold cathode electron sources 13 are formed in a matrix on the cathode electrode wiring layer 11 by a printing method. The cold cathode electron source 13 is provided at a position facing the phosphor 8 formed on the front glass 1. Here, the maximum thickness of the cold cathode electron source 13 is limited so that the gate electrode 21 does not contact the cold cathode electron source 13.
[0040]
Each of the cathode electrode wiring layer 11 and the gate electrode wiring layer 12 is provided with a cathode / gate electrode terminal 14 for supplying a voltage. The cathode / gate electrode terminal 14 is embedded in the back glass 2. The rear glass 2 is provided with an exhaust hole 5 substantially at the center.
[0041]
The gate electrode 21 of FIG. 3 formed by the above method is incorporated in the back glass 2 of FIG. First, the gate electrode 21 of FIG. 3 and the rear glass 2 of FIG. 4 are arranged so that the gate electrode 21 and the cathode electrode wiring layer 11 are orthogonal to each other, and the mesh-shaped opening 23 matches the cold cathode electron source 13. I do. Next, a holding jig made of ceramic or the like is placed on the gate electrode 21, the gate electrode 21 is pressed in the direction of the back glass 2, and the bent portion 22 is fixed with a clip in a state of being in contact with the back glass 2. The low-melting glass 4 is poured from the frit hole 24 of the fixed gate electrode 21 to fix the gate electrode 21 to the rear glass 2. After the gate electrode 21 is securely fixed to the back glass 2, the clip, the holding jig, and the like are removed. After that, the bridge 25 and the reinforcing plate 26 commonly connected to the gate electrode 21 are removed. Thereby, the rear glass 2 into which the gate electrode 21 is incorporated as shown in FIG. 5 is formed.
[0042]
Next, in order to apply a voltage to the gate electrode 21, it is necessary to electrically connect the gate electrode wiring layer 12 and the gate electrode 21. Therefore, a conductive paste 27 is applied to a portion where the gate electrode 21 and the gate electrode wiring layer 12 intersect to be electrically connected. Thereby, the rear glass 2 into which the gate electrode 21 is incorporated as shown in FIG. 6 is formed.
[0043]
As described above, in the present embodiment, since the bent portion 22 forms the leg of the gate electrode 21, the bent portion 22 does not release gas into the container of the cold cathode light emitting device, and the gap between the gate electrode and the cathode electrode wiring layer is not formed. The distance can be kept uniform. Further, since half etching is not required and the thickness of the gate electrode 21 can be reduced, the mesh shape of the opening can be reduced.
[0044]
In the present invention, the cold cathode material of the cold cathode electron source 13 is not limited to the CNT shown in the present embodiment, but may be a cold cathode material such as tungsten. However, a carbon-based material including CNT and diamond has a feature that it has a high electron emission ability and can form a cold cathode electron source by a printing method. Further, in the present invention, the material of the gate electrode 21 is not limited to the 426 alloy shown in the present embodiment. However, the 426 alloy and the 50-50 alloy are characterized by having a coefficient of thermal expansion substantially equal to that of white glass.
[0045]
(Embodiment 2)
FIG. 7 shows a plan view of the gate electrode according to the present embodiment. Gate electrode 21 according to the present embodiment is different from gate electrode 21 according to the first embodiment in that a plurality of bent portions 22 are provided only on one side on a long side of gate electrode 21. . FIG. 7A shows a plan view before the bending portion 22 is bent. Here, the length (L1) of the bent portion 22 is substantially the same as the width (L2) of the gate electrode 21.
[0046]
The bent portion 22 has the same thickness as the gate electrode 21, and is bent approximately 180 degrees inward starting from the vicinity of the boundary with the gate electrode 21. FIG. 7B shows a plan view after the plurality of bent portions 22 have been bent. In FIG. 7B, the bent portion 22 is bent so as to be below the gate electrode 21. In FIG. 7B, the bent portion 22 is represented by a wavy line.
[0047]
The bent portion 22 is provided at a position that does not block the mesh-like opening 23 and the frit hole 24 provided in the gate electrode 21 when bent. The bent portion 22 is provided only on one side. Therefore, when bent, the bent portions 22 do not overlap each other, and form the legs of the gate electrode 21 having a height equal to the thickness of the bent portion 22 (same as the thickness of the gate electrode 21).
[0048]
Therefore, also in the gate electrode 21 of the present embodiment, the distance between the gate electrode 21 and the cathode electrode wiring layer 11 can be kept constant. Note that the length (L1) of the bent portion 22 does not necessarily need to be substantially the same as the width (L2) of the gate electrode 21, and may be a length that does not affect the parallelism of the gate electrode 21. For example, the width may be smaller than the width (L2) of the gate electrode 21.
[0049]
In addition, since the bent portion 22 of the present embodiment is also bent approximately 180 degrees inward, springback occurs in the bent portion 22. In order to reduce the influence of the springback on the distance between the gate electrode 21 and the cathode electrode wiring layer 11, a notch (not shown) is provided at the starting point of the bent portion 22 by half etching. Note that the shape and position of the cut provided at the bending start point are appropriately determined in consideration of the material and shape of the bent portion 22. Further, when the gate electrode 21 is fixed to the rear glass 2 with the low melting point glass 4, the jig is used while pressing the gate electrode 21 in the direction of the rear glass 2, so that the floating of the gate electrode 21 due to springback can be prevented. it can.
[0050]
Further, as in the first embodiment, when the back glass 2 is a white plate glass, the material of the gate electrode 21 is 426 alloy or so that the gate electrode 21 does not peel off or warp from the back glass 2. A 50-50 alloy is used.
[0051]
The reason why the bent portion 22 is provided only on one side of the long side of the gate electrode 21 as shown in FIG. 7 is that when the interval between the gate electrodes 21 is narrow, there is no space for providing the bent portion 22 on both sides, This is because the portion 22 cannot be provided. For example, in the case of a cold-cathode light emitting device having an unequal pitch pixel array, the intervals between the gate electrodes 21 are also unequal. For this reason, as shown in FIG. 7, a portion where the interval between the gate electrodes 21 is narrow occurs, and the bent portion 22 cannot be provided in this portion. Therefore, the bent portion 22 is provided only on one side of the long side of the gate electrode 21 where a space for providing the bent portion 22 can be secured.
[0052]
When the bent portions 22 provided on the long sides of the adjacent gate electrodes 21 interfere with each other and a sufficient length of the bent portions 22 cannot be secured, the bent portions provided on the long sides of the adjacent gate electrodes 21 are not provided. By shifting the positions of the portions 22 from each other, a sufficient length of the bent portion 22 can be ensured.
[0053]
(Embodiment 3)
In the first or second embodiment, a plurality of bent portions 22 are provided on both sides or one side on the long side of the gate electrode 21. The bent portion 22 has the same thickness as the gate electrode 21. The bent portions 22 are bent substantially 180 degrees inward from the vicinity of the boundary with the gate electrode 21 without overlapping each other. Therefore, the bent portion 22 forms a leg of the gate electrode 21 having a height corresponding to the thickness of the gate electrode 21. Therefore, the distance between the gate electrode 21 and the cathode electrode wiring layer 11 is always as high as the thickness of the gate electrode 21.
[0054]
Therefore, in the first and second embodiments, the distance between the gate electrode 21 and the cathode electrode wiring layer 11 is determined by the thickness of the gate electrode 21. Therefore, if the thickness of the gate electrode 21 cannot be freely selected, the distance between the gate electrode 21 and the cathode electrode wiring layer 11 is limited. Therefore, the following gate electrode structure is shown in order to avoid the above limitation.
[0055]
First, FIG. 8A shows a cross-sectional view of the gate electrode 21 after bending in the first embodiment. In the gate electrode 21 of FIG. 8A, the length (L1) of the bent portion 22 is half the width (L2) of the gate electrode 21. Therefore, when bent from both sides, the bent portions 22 do not overlap each other. As a result, the bent portion 22 forms a leg of the gate electrode 21 having a height corresponding to the thickness of the bent portion 22 (gate electrode 21).
[0056]
On the other hand, FIG. 8B is a cross-sectional view of the gate electrode 21 after being bent in the present embodiment. In the gate electrode 21 of FIG. 8B, the length (L1) of the bent portion 22 is substantially the same as the width (L2) of the gate electrode 21. Therefore, when bent from both sides, the bent parts 22 overlap each other. As a result, the bent portion 22 forms a leg of the gate electrode 21 having a height twice as large as the film thickness of the bent portion 22 (gate electrode 21).
[0057]
As shown in FIG. 8B, the distance between the gate electrode 21 and the cathode electrode wiring layer 11 is adjusted by overlapping the bent portions 22 bent from both sides. However, in the structure of the gate electrode 21, the distance between the gate electrode 21 and the cathode electrode wiring layer 11 can be adjusted only to a height twice the thickness of the gate electrode 21.
[0058]
【The invention's effect】
Since the cold cathode light emitting device according to the first aspect of the present invention has a plurality of bent portions which are bent substantially 180 degrees inward to form legs for the first substrate, gas is discharged into the container of the cold cathode light emitting device. Instead, the distance between the gate electrode and the cathode electrode wiring layer can be kept uniform. Further, there is an effect that the mesh shape of the opening can be reduced.
[0059]
Since the cold cathode light emitting device according to claim 2 of the present invention has a plurality of bent portions only on one side of the long side of the gate electrode, the interval between the gate electrodes in the cold cathode light emitting device adopting an unequal pitch pixel array is provided. Even when a narrow portion occurs, there is an effect that a bent portion can be provided.
[0060]
Since the cold cathode light emitting device according to claim 3 of the present invention has a plurality of bent portions on both sides of the long side of the gate electrode, if the interval between adjacent gate electrodes is equal to the width of the gate electrode, the bent portion is formed. There is an effect of being provided on the long side of the gate electrode without interfering with each other.
[0061]
In the cold-cathode light-emitting device according to claim 4 of the present invention, the plurality of bent portions bent inward by approximately 180 degrees so as to overlap each other form legs for the first substrate. There is an effect that the distance to the layer can be adjusted to twice the height of the gate electrode.
[0062]
In the cold-cathode light-emitting device according to the fifth aspect of the present invention, since the plurality of bent portions are provided with cuts at the bending starting points, there is an effect of reducing springback occurring at the bent portions.
[0063]
In the cold cathode light emitting device according to claim 6 of the present invention, the gate electrode is made of 426 alloy or 50-50 alloy, and the first substrate is made of white plate glass. This has the effect of preventing warping.
[0064]
Since the cold cathode light emitting device according to claim 7 of the present invention uses a carbon-based material containing carbon nanotubes or diamond as the cold cathode material, it has a high electron emission capability and has an effect of forming a cold cathode electron source by a printing method. is there.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a cold cathode light emitting device according to Embodiment 1 of the present invention.
FIG. 2 is a plan view of a gate electrode according to the first embodiment of the present invention.
FIG. 3 is a plan view of a gate electrode, a bridge, and a reinforcing plate according to the first embodiment of the present invention.
FIG. 4 is a plan view of the back glass according to the first embodiment of the present invention.
FIG. 5 is a plan view of a back glass and a gate electrode according to the first embodiment of the present invention.
FIG. 6 is a plan view of a back glass and a gate electrode according to the first embodiment of the present invention.
FIG. 7 is a plan view of a gate electrode according to a second embodiment of the present invention.
FIG. 8 is a sectional view of a gate electrode according to a third embodiment of the present invention.
FIG. 9 is a cross-sectional view of a conventional cold cathode light emitting device.
FIG. 10 is a cross-sectional view of a cold cathode light emitting device having a gate electrode structure subjected to a half etching process.
[Explanation of symbols]
1,101 front glass, 2,102 rear glass, 3,103 spacer glass, 4,104 low melting point glass, 5 exhaust hole, 6,105 chip glass tube, 7,106 getter, 8,107 phosphor, 9,108 Anode, 10,109 Anode lead wire, 11,110 Cathode electrode wiring layer, 12,111 Gate electrode wiring layer, 13,112 Cold cathode electron source, 14,115 Cathode / gate electrode terminal, 21,114 Gate electrode, 22 bend Part, 23 mesh openings, 24 frit holes, 25 bridges, 26 reinforcing plates, 27 conductive paste, 113 insulating ribs, 116 gate electrode substrate.

Claims (7)

First and second substrates disposed opposite to each other and having a space evacuated to vacuum;
A light emitting unit disposed at a predetermined position on the space side on the second substrate and having an anode and a phosphor disposed on the anode;
An electron emission unit that is arranged at a position on the first substrate facing the light emitting unit on the space side and emits electrons when a predetermined potential is applied;
It has multiple bent parts,
The plurality of bent portions are bent substantially 180 degrees inward to form legs for the first substrate, and are disposed on the first position substrate;
A cold cathode light emitting device comprising: a gate electrode having an opening at a position corresponding to the electron emitting portion. The cold cathode light emitting device according to claim 1,
The cold cathode light emitting device according to claim 1, wherein the gate electrode has the plurality of bent portions only on one side of a long side of the gate electrode. The cold cathode light emitting device according to claim 1,
The cold cathode light emitting device according to claim 1, wherein the gate electrode has the plurality of bent portions on both sides of a long side of the gate electrode. The cold cathode light emitting device according to claim 3, wherein
The cold cathode light emitting device according to claim 1, wherein the plurality of bent portions of the gate electrode, which are bent inward by about 180 degrees so as to overlap with each other, form legs for the first substrate. The cold cathode light emitting device according to any one of claims 1 to 4, wherein
The cold cathode light emitting device, wherein the plurality of bent portions are provided with cuts at bending start points. The cold cathode light emitting device according to claim 1, wherein:
The gate electrode is made of 426 alloy or 50-50 alloy,
The cold cathode light emitting device according to claim 1, wherein the first substrate is a white plate glass. The cold cathode light emitting device according to claim 1, wherein:
A cold cathode light emitting device according to claim 1, wherein said electron emitting portion uses a carbon-based material containing carbon nanotubes or diamond as a cold cathode material.

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