JP2004073256A5 - - Google Patents

Download PDF

Info

Publication number
JP2004073256A5
JP2004073256A5 JP2002233956A JP2002233956A JP2004073256A5 JP 2004073256 A5 JP2004073256 A5 JP 2004073256A5 JP 2002233956 A JP2002233956 A JP 2002233956A JP 2002233956 A JP2002233956 A JP 2002233956A JP 2004073256 A5 JP2004073256 A5 JP 2004073256A5
Authority
JP
Japan
Prior art keywords
conversion
imaging apparatus
radiographic imaging
conversion element
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002233956A
Other languages
Japanese (ja)
Other versions
JP2004073256A (en
JP4217443B2 (en
Filing date
Publication date
Priority claimed from JP2002233956A external-priority patent/JP4217443B2/en
Priority to JP2002233956A priority Critical patent/JP4217443B2/en
Application filed filed Critical
Priority to US10/636,884 priority patent/US7006598B2/en
Priority to EP03018034.3A priority patent/EP1388740B1/en
Priority to CN03127802.7A priority patent/CN1260955C/en
Publication of JP2004073256A publication Critical patent/JP2004073256A/en
Priority to US11/245,256 priority patent/US7231018B2/en
Publication of JP2004073256A5 publication Critical patent/JP2004073256A5/ja
Priority to US11/736,877 priority patent/US7368724B2/en
Publication of JP4217443B2 publication Critical patent/JP4217443B2/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Claims (16)

基板上に入射する放射線を電気信号に変換する変換手段を有し、前記変換手段から出力される電気信号に基づいて画像情報が生成される放射線画像撮影装置であって、
前記基板上であって前記変換手段の下方部位に、前記放射線の入射量を検出する検出手段を備え、前記検出手段による検出結果に基づいて、入射する放射線に対する露出制御が行われることを特徴とする放射線画像撮影装置。A radiographic imaging apparatus having a conversion means for converting radiation incident on a substrate into an electrical signal, and generating image information based on an electrical signal output from the conversion means,
A detection means for detecting an incident amount of the radiation is provided on the substrate and below the conversion means, and exposure control for incident radiation is performed based on a detection result by the detection means. A radiographic imaging device. 前記変換手段を複数有し、前記検出手段が前記複数の変換手段の間隙に整合して設けられていることを特徴とする請求項１に記載の放射線画像撮影装置。  The radiographic imaging apparatus according to claim 1, wherein a plurality of the conversion units are provided, and the detection unit is provided in alignment with a gap between the plurality of conversion units. 前記検出手段による結果に基づいて、前記変換手段の制御が行われることを特徴とする請求項１に記載の放射線画像撮影装置。  The radiographic imaging apparatus according to claim 1, wherein the conversion unit is controlled based on a result of the detection unit. 前記変換手段は、入射する放射線を可視光に変換する蛍光体及び前記蛍光体により変換された可視光を電気信号に変換する第１の変換素子を含むことを特徴とする請求項１又は２に記載の放射線画像撮影装置。  3. The conversion unit according to claim 1, wherein the conversion unit includes a phosphor that converts incident radiation into visible light, and a first conversion element that converts visible light converted by the phosphor into an electrical signal. The radiographic imaging apparatus as described. 前記変換手段は、入射する放射線を電気信号に変換する第１の変換素子を含むことを特徴とする請求項１又は２に記載の放射線画像撮影装置。  The radiographic imaging apparatus according to claim 1, wherein the conversion unit includes a first conversion element that converts incident radiation into an electrical signal. 前記検出手段は、蛍光体により放射線から変換された可視光を電気信号に変換する第２の変換素子から成ることを特徴とする請求項１に記載の放射線画像撮影装置。  The radiographic image capturing apparatus according to claim 1, wherein the detection unit includes a second conversion element that converts visible light converted from radiation by a phosphor into an electric signal. 前記検出手段は、所定の閉領域内に形成される前記第１の変換素子群の下方部位に形成されることを特徴とする請求項４又は５に記載の放射線画像撮影装置。  The radiographic imaging apparatus according to claim 4, wherein the detection unit is formed in a lower part of the first conversion element group formed in a predetermined closed region. 前記第１の変換素子は、変換層を含み、前記変換層は、前記検出手段の上方部位においてその他の箇所に比べて膜厚が薄くなっていること特徴とする請求項４又は５に記載の放射線画像撮影装置。  6. The first conversion element according to claim 4 or 5, wherein the first conversion element includes a conversion layer, and the conversion layer has a smaller film thickness in an upper portion of the detection means than in other portions. Radiation imaging device. 前記第１の変換素子は、変換層を含み、前記変換層には、前記検出手段の上方部位に開孔が形成されることを特徴とする請求項４又は５に記載の放射線画像撮影装置。  The radiographic imaging apparatus according to claim 4, wherein the first conversion element includes a conversion layer, and an opening is formed in the conversion layer at an upper portion of the detection unit. 前記第１の変換素子は、ＭＩＳ型の半導体変換素子であることを特徴とする請求項４又は５に記載の放射線画像撮影装置。  6. The radiographic imaging apparatus according to claim 4, wherein the first conversion element is a MIS type semiconductor conversion element. 前記第２の変換素子は、ＭＩＳ型の半導体変換素子であることを特徴とする請求項６に記載の放射線画像撮影装置。  The radiographic image capturing apparatus according to claim 6, wherein the second conversion element is a MIS type semiconductor conversion element. 前記第１の変換素子は、ＰＩＮ型の半導体変換素子であることを特徴とする請求項４又は５に記載の放射線画像撮影装置。  6. The radiographic imaging apparatus according to claim 4, wherein the first conversion element is a PIN type semiconductor conversion element. 前記検出手段は、前記変換手段からの電気信号の出力動作を切り換えるスイッチング素子と同層に形成されることを特徴とする請求項１に記載の放射線画像撮影装置。  The radiographic imaging apparatus according to claim 1, wherein the detection unit is formed in the same layer as a switching element that switches an output operation of an electric signal from the conversion unit. 前記第１の変換素子は、アモルファスセレン（a-Se）又はガリウム砒素（GaAs）を含有して成ることを特徴とする請求項４又は５に記載の放射線画像撮影装置。  The radiographic imaging apparatus according to claim 4, wherein the first conversion element contains amorphous selenium (a-Se) or gallium arsenide (GaAs). 入射する放射線を電気信号に変換する複数の変換手段と放射線の入射量を検出する複数の検出手段とを有する放射線画像撮影装置の製造方法であって、
前記変換手段の下方部位に前記検出手段を形成することを特徴とする放射線画像撮影装置の製造方法。A method for manufacturing a radiographic imaging apparatus, comprising: a plurality of conversion means for converting incident radiation into an electrical signal; and a plurality of detection means for detecting an incident amount of radiation,
A method for manufacturing a radiographic imaging apparatus, wherein the detection means is formed in a lower part of the conversion means. 基板上に入射する放射線を電気信号に変換する変換手段からの電気信号の出力動作を切り換えるスイッチング素子と、放射線の入射量を検出する検出素子とを含み、
前記基板上において前記スイッチング素子と前記検出素子とが同層に形成されることを特徴とする撮像回路基板。 A switching element that switches an output operation of an electric signal from a conversion means that converts radiation incident on the substrate into an electric signal, and a detection element that detects the amount of incident radiation,
An imaging circuit board , wherein the switching element and the detection element are formed in the same layer on the substrate.
JP2002233956A 2002-08-09 2002-08-09 Radiation image capturing apparatus, manufacturing method thereof, and imaging circuit board Expired - Fee Related JP4217443B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002233956A JP4217443B2 (en) 2002-08-09 2002-08-09 Radiation image capturing apparatus, manufacturing method thereof, and imaging circuit board
US10/636,884 US7006598B2 (en) 2002-08-09 2003-08-07 Imaging method and apparatus with exposure control
EP03018034.3A EP1388740B1 (en) 2002-08-09 2003-08-07 Radiation imaging method and apparatus
CN03127802.7A CN1260955C (en) 2002-08-09 2003-08-08 Device and method for image shooting using radiation ray
US11/245,256 US7231018B2 (en) 2002-08-09 2005-10-07 Imaging method and apparatus with exposure control
US11/736,877 US7368724B2 (en) 2002-08-09 2007-04-18 Imaging method and apparatus with exposure control

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002233956A JP4217443B2 (en) 2002-08-09 2002-08-09 Radiation image capturing apparatus, manufacturing method thereof, and imaging circuit board

Publications (3)

Publication Number Publication Date
JP2004073256A JP2004073256A (en) 2004-03-11
JP2004073256A5 true JP2004073256A5 (en) 2005-10-27
JP4217443B2 JP4217443B2 (en) 2009-02-04

Family

ID=32018947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002233956A Expired - Fee Related JP4217443B2 (en) 2002-08-09 2002-08-09 Radiation image capturing apparatus, manufacturing method thereof, and imaging circuit board

Country Status (1)

Country Link
JP (1) JP4217443B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5043380B2 (en) 2005-07-25 2012-10-10 キヤノン株式会社 Radiation detection apparatus and radiation detection system
JP4597936B2 (en) 2005-10-06 2010-12-15 富士フイルム株式会社 Breast imaging device
JP5676632B2 (en) * 2010-10-26 2015-02-25 富士フイルム株式会社 Radiation image capturing apparatus, program executed by the apparatus, and radiation image capturing method
JP5554258B2 (en) * 2011-02-04 2014-07-23 富士フイルム株式会社 Radiation detector
JP5436483B2 (en) 2011-03-25 2014-03-05 富士フイルム株式会社 Radiographic imaging system and program
JP5676405B2 (en) 2011-09-27 2015-02-25 富士フイルム株式会社 Radiation image capturing apparatus, radiation image capturing system, program, and radiation image capturing method
WO2013154179A1 (en) 2012-04-13 2013-10-17 富士フイルム株式会社 Radiographic system and method for operating same
JP6041669B2 (en) 2012-12-28 2016-12-14 キヤノン株式会社 Imaging apparatus and imaging system

Similar Documents

Publication Publication Date Title
KR101921402B1 (en) Array substrate and manufacturing method thereof, x-ray flat panel detector and camera system
CN105789229B (en) Photoelectric conversion device, image picking system and the method for manufacturing photoelectric conversion device
TWI415283B (en) X-ray detector and fabrication method thereof
US6731337B2 (en) Solid-state imaging device
US8084287B2 (en) Photoelectric conversion apparatus, producing method therefor, image pickup module and image pickup system
KR102651181B1 (en) Imaging elements and imaging devices
US7172922B2 (en) CMOS image sensor array with black pixel using negative-tone resist support layer
CN102857711A (en) Imaging element, drive method for imaging element, manufacturing method for imaging element, and electronic apparatus
KR20030022724A (en) High-density inter-die interconnect structure
EP0767389A3 (en) X-ray image pickup device
EP1420453A3 (en) Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system
JP2023052966A (en) Image capture device and electronic apparatus
JP2004073256A5 (en)
WO2004047180A1 (en) Photo detection device
JPS55161471A (en) Solid image pickup device
JP2019041142A (en) Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus
JP2000077640A (en) Image read device and radiation imaging device
US20060177955A1 (en) Process for making a CMOS image sensor
Kawabata et al. A 1.8 e− temporal noise over 90dB dynamic range 4k2k super 35mm format seamless global shutter CMOS image sensor with multiple accumulation shutter technology
US20150048378A1 (en) Image pickup element and image pickup device
JP2007194606A (en) Photovoltaic converter, method for fabrication thereof, imaging module, and imaging system
JPH06310699A (en) Multilayer solid-state image pickup device
Akiyama et al. A 1280× 980 pixel CCD image sensor
JP3484340B2 (en) Image sensor
US20070200943A1 (en) Cyclic camera