JP2004063748A5

JP2004063748A5 -

Info

Publication number: JP2004063748A5
Application number: JP2002219607A
Authority: JP
Filing date: 2002-07-29
Publication date: 2005-10-27

Claims

A method for detecting an end point of processing in a substrate processing in which a thin film formed on a surface of a substrate is partially or entirely removed until a desired film thickness is obtained,
A setting step for determining a setting value of each reflected light intensity at at least two wavelengths;
A measurement value obtaining step of irradiating a predetermined portion of the surface of the substrate with light, dispersing the light reflected by the surface of the substrate, and obtaining a measurement value of each reflected light intensity at at least two wavelengths;
A comparison step of comparing the measured values of the reflected light intensities at at least two of the wavelengths obtained in the measurement value acquisition step with the set values of the reflected light intensities of at least two of the wavelengths, respectively;
With
The measurement value acquisition step and the comparison step are repeatedly performed as time elapses after the substrate processing is started, and the obtained measurement values of the reflected light intensity at at least two wavelengths are at least at the two wavelengths. A method of detecting a processing end point in substrate processing, characterized in that a processing end point is a point in time at which each set value of reflected light intensity is matched within a predetermined range.

The method for detecting a processing end point in substrate processing according to claim 1, wherein light is irradiated obliquely with respect to the surface of the substrate.

The method for detecting a processing end point in substrate processing according to claim 2, wherein the substrate processing is processing for dry etching the substrate in a plasma atmosphere.

In the setting step, set values of reflected light intensities at three wavelengths are determined. In the measurement value acquiring step, measured values of reflected light intensities at three wavelengths are obtained. In the comparing step, the measured values are measured. The measured values of the reflected light intensities at the three wavelengths obtained in the value acquisition step are compared with the set values of the reflected light intensities at the three wavelengths, and the reflected light intensities at the three wavelengths are measured. 2. The method of detecting a processing end point in substrate processing according to claim 1, wherein a point in time at which the value matches a set value of each reflected light intensity at three wavelengths within a predetermined range is set as a processing end point .

The process end point is defined as a point in time when the measured values of the reflected light intensities at at least two of the wavelengths match with the set values of the reflected light intensities of at least two of the wavelengths by 90% or more, respectively. A method for detecting a processing end point in substrate processing .

In the substrate processing method of removing the thin film formed on the surface of the substrate partially or entirely until a desired film thickness is obtained,
A setting step for determining a setting value of each reflected light intensity at at least two wavelengths;
A measurement value obtaining step of irradiating a predetermined portion of the surface of the substrate with light, dispersing the light reflected by the surface of the substrate, and obtaining a measurement value of each reflected light intensity at at least two wavelengths;
A comparison step of comparing the measured values of the reflected light intensities at at least two of the wavelengths obtained in the measurement value acquisition step with the set values of the reflected light intensities of at least two of the wavelengths, respectively;
With
The measurement value acquisition step and the comparison step are repeatedly performed as time elapses after the substrate processing is started, and the obtained measurement values of the reflected light intensity at at least two wavelengths are at least at the two wavelengths. A substrate processing method characterized in that the processing is terminated at the time when each set value of each reflected light intensity is matched within a predetermined range .

The substrate processing method of Claim 6 which irradiates light to the diagonal direction with respect to the surface of a board | substrate.

In the setting step, set values of reflected light intensities at three wavelengths are determined. In the measurement value acquiring step, measured values of reflected light intensities at three wavelengths are obtained. In the comparing step, the measured values are measured. The measured values of the reflected light intensities at the three wavelengths obtained in the value acquisition step are compared with the set values of the reflected light intensities at the three wavelengths, and the reflected light intensities at the three wavelengths are measured. The point of time when the value matches the set value of each reflected light intensity at the three wavelengths within a predetermined range is the end point of the processing. Item 7. The substrate processing method according to Item 6.

7. The substrate according to claim 6, wherein a point in time at which the measured values of the reflected light intensities at at least two of the wavelengths match each of the set values of the reflected light intensities at at least two of the wavelengths by 90% or more is an end point of the processing. Processing method.

In a substrate processing apparatus for removing a thin film formed on a surface of a substrate partially or entirely until a desired film thickness is obtained,
  A light projecting means for irradiating light onto a predetermined portion of the surface of the substrate;
  A spectroscopic means for repeatedly spectroscopically analyzing light reflected from the surface of the substrate as time elapses after starting the processing of the substrate, and sequentially obtaining measured values of the reflected light intensities at at least two wavelengths;
  The measured values of the reflected light intensities at at least two wavelengths sequentially obtained by the spectroscopic means are sequentially compared with the set values of the reflected light intensities at at least two of the wavelengths, and the reflected lights at at least two of the wavelengths are compared. A calculation means for determining when the measured intensity value matches the set value of each reflected light intensity at at least two wavelengths within a predetermined range as an end point of processing;
A substrate processing apparatus comprising:

The substrate processing apparatus according to claim 10, wherein the light is irradiated from the light projecting unit in an oblique direction to the surface of the substrate.

The spectroscopic means obtains the measured values of the reflected light intensities at the three wavelengths, and the computing means obtains the measured values of the reflected light intensities at the three wavelengths and the set values of the reflected light intensities at the three wavelengths. The respective comparisons are sequentially made, and the point in time when the measured values of the reflected light intensities at the three wavelengths match the set values of the reflected light intensities at the three wavelengths within a predetermined range is determined as the processing end point. Item 11. The substrate processing apparatus according to Item 10.

The time at which the measured values of the reflected light intensities at at least two of the wavelengths match the set values of the reflected light intensities of at least two of the wavelengths by 90% or more by each of the computing means is determined as the processing end point. The substrate processing apparatus according to claim 10.