JP2004043839A - Film-forming apparatus and film-forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming apparatus for forming a film with a uniform thickness within a substrate surface, and a film-forming method. <P>SOLUTION: The film-forming apparatus 1 comprises a raw-steam chamber 11 for storing a raw steam G of a film-forming raw material S in a predetermined condition therein, having a first aperture 11a provided with a first gate 13 which is formed so as to have approximately the same shape as the surface Wa to be film-formed of a substrate W, and can be freely opened and closed; a film-forming chamber 15 which is communicated to the raw-steam chamber 11 through the first aperture 11a and has a second aperture 15a arranged so as to face the first aperture 11a; and a substrate support means 19 which has a support surface 20 for holding the substrate W and can freely blockade the second aperture 15a in a state of making the support surface 20 face to the film-forming chamber 15. The film-forming method with the use of the film-forming apparatus 1 comprises filling the raw steam chamber 11 with the raw steam G of the film-forming raw material S into a predetermined state, and then exposing the face to be film-formed of the substrate W to the raw steam G in the raw steam chamber 11, to deposit the film-forming raw material on the surface to be film-formed. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a film forming apparatus and a film forming method, and more particularly, to a film forming apparatus and a film forming method suitably used for forming an organic thin film forming an optical element such as an organic EL element or an electric element such as an organic transistor. About.
[0002]
[Prior art]
An organic EL element using electroluminescence (hereinafter, referred to as EL) of an organic material has an organic layer sandwiched between an anode and a cathode. In the organic EL element having such a configuration, it is possible to obtain light-emitting elements that emit light of each color by selecting the material of the organic layer. Alternatively, a display device capable of full-color display can be formed.
[0003]
By the way, in manufacturing such an organic EL element, an organic layer is formed by a vacuum evaporation method. In the vacuum deposition method, a vapor deposition material is evaporated from the evaporation source in a state where the substrate is arranged above the evaporation source so as to face the evaporation source, so that the vapor deposition material is supplied and deposited on the surface of the substrate. Is the way.
[0004]
In recent years, an organic vapor deposition method (organic vapor phase deposition: OVPD method) has been proposed as a film forming method instead of the vacuum evaporation method (Japanese Patent Application Laid-Open Nos. 2001-523768 and 2000-504298). As disclosed in these publications, in the OVPD method, a plurality of source gases are supplied into a reactor in which a substrate is housed, and these are caused to react with each other, and an organic compound generated by the reaction is laminated on the surface of the substrate. This is a method of forming an organic thin film.
[0005]
[Problems to be solved by the invention]
However, each of the above-described film forming methods has the following problems. That is, in the vacuum deposition method, a deposition material supplied in a state of being diffused upward from an evaporation source is deposited on the substrate surface. For this reason, the supply angle of the vapor deposition material with respect to the substrate surface is different between the center and the end of the substrate. Therefore, it is very difficult to form a film having a uniform thickness.
[0006]
For this reason, when applying the vacuum evaporation method to the formation of the organic film in the manufacture of the organic EL element and the display using the same, it is not possible to obtain a uniform organic film in the substrate surface and further in the pixel surface, This causes a variation in element characteristics and display characteristics.
[0007]
Further, in the above-described vacuum vapor deposition method, when pattern vapor deposition is performed by disposing a vapor deposition mask between a substrate and an evaporation source, a position of an opening in the vapor deposition mask and a vapor deposition pattern formed on the substrate by a so-called shadow effect. There is also a problem that a deviation occurs from the position.
[0008]
On the other hand, in the OVPD method, since it is difficult to make the concentration of the source gas in the reactor uniform, it is difficult to form a film having a uniform film thickness. Therefore, even when the OVPD method is applied to the formation of an organic film in the production of an organic EL element and a display using the same, the same problem as in the vacuum evaporation method occurs.
[0009]
Therefore, an object of the present invention is to provide a film forming apparatus and a film forming method capable of forming a film with a uniform film thickness on a substrate surface.
[0010]
[Means for Solving the Problems]
A film forming apparatus according to the present invention for achieving the above object is a film forming apparatus for forming a thin film on a film forming surface of a substrate, and includes a raw material vapor chamber and substrate supporting means. The raw material vapor chamber has a first opening which is formed in substantially the same shape as the film forming surface of the substrate and has a gate which can be opened and closed, and stores therein a raw material vapor of the film forming raw material in a predetermined state. The substrate supporting means holds the substrate with the film-forming surface of the substrate facing the first opening.
[0011]
The present invention is also a film forming method using a film forming apparatus having such a configuration, wherein after filling a raw material vapor chamber with a raw material vapor of a film forming raw material to a predetermined state, the raw material vapor filled with the raw material vapor is used. The film forming surface of the substrate is exposed to an indoor atmosphere, and the film forming material is deposited on the film forming surface. In this case, the substrate is kept at a temperature lower than the freezing point of the film forming material.
[0012]
According to such a film forming apparatus and a film forming method, the film forming surface of the substrate is exposed to the raw material vapor previously filled in the raw material vapor chamber. Is not affected, and the film is formed by uniformly supplying the raw material vapor to the film forming surface having a large area.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of a film forming apparatus and a film forming method of the present invention will be described in detail with reference to the drawings. In each embodiment, the configuration of a film forming apparatus will be described first, and then a film forming method using the film forming apparatus will be described.
[0014]
<First embodiment>
Film forming equipment
FIG. 1 is a schematic configuration diagram illustrating a film forming apparatus according to a first embodiment of the present invention.
[0015]
The film forming apparatus 1 shown in FIG. 1 includes a raw material vapor chamber 11 in which a raw material vapor G of a film forming raw material S is stored in a predetermined state. The raw material vapor chamber 11 is provided with a heating means 12 capable of keeping the inside confidential and capable of heating the inside. Although not shown here, the raw material vapor chamber has a decompression system capable of exhausting and holding the molecules other than the raw material under reduced pressure. The upper portion of the raw material vapor chamber 11 is open to a wide opening, and this opening portion serves as a first opening 11a. The first opening 11a has a shape in which the film formation surface Wa of the substrate W on which the film formation process is performed by the film formation apparatus 1 is slightly larger.
[0016]
The first opening 11a is provided with a first gate 13 which can be opened and closed. The first gate 13 is, for example, a single plate that covers the first opening 11a, and opens and closes the first opening 11a by sliding in a horizontal direction. The first gate 13 is provided with a heating means not shown here, and can be heated to the same degree as the inside of the raw material vapor chamber 11.
[0017]
Above the raw material vapor chamber 11 having such a configuration, a film forming chamber 15 communicated with the raw material vapor chamber 11 through the first opening 11a is arranged. The film forming chamber 15 is provided with a second opening 15a facing the first opening 11a. The film forming chamber 15 is provided with a heating means not shown here, and can be heated to the same degree as the inside of the raw material vapor chamber 11. Although not shown here, the film forming chamber has a decompression system capable of exhausting and maintaining a reduced pressure.
[0018]
The second opening 15a has a shape that is slightly larger than the film formation surface Wa of the substrate W, and the substrate W can be fitted therein. The second opening 15a is also provided with a second second gate 16 as an openable / closable gate. The second gate 16 is a single plate that covers the second opening 15a, and opens and closes the second opening 15a by sliding in the horizontal direction. Further, it is preferable that the film forming chamber 15 be configured with a volume as small as possible within a range in which the substrate W can be stored.
[0019]
A load lock chamber 17 that communicates with the film forming chamber 15 via the second opening 15a is disposed above the film forming chamber 15 having such a configuration. A substrate support means 19 for supporting the substrate W is accommodated in the load lock chamber 17. Although not shown here, it is assumed that the load lock chamber 17 is provided with an openable and closable opening for taking the substrate W in and out. The load lock chamber 17 has a decompression system capable of exhausting and maintaining the pressure.
[0020]
The substrate support means 19 has a holding surface 20 for holding the substrate W, is capable of moving up and down the holding surface 20 toward the film forming chamber 15, and from a second opening 15 a opened by the second gate 16. The second opening 15a can be closed with the holding surface 20 facing the film forming chamber 15. Further, the substrate supporting means 19 is provided with a cooling mechanism (not shown) for cooling the substrate W held on the holding surface 20. This cooling mechanism is based on, for example, circulating water cooling (for example, a water temperature of 5 ° C.).
[0021]
The holding surface 20 of the substrate W is provided with a film thickness monitor 21 (for example, a crystal oscillator monitor) for measuring the film thickness on the film formation surface Wa of the substrate W as necessary. . When such a film thickness monitor 21 is provided, the film thickness monitor 21 can be fitted into the second opening 15 a of the film formation chamber 15 together with the substrate W held on the holding surface 20.
[0022]
Although not shown in FIG. 1, the raw material vapor chamber 11, the film forming chamber 15, and the load lock chamber 17 are provided with an exhaust unit for exhausting an internal atmosphere and an inert gas for supplying an inert gas. Active gas supply means is provided as needed, and the pressures in the respective chambers 11, 15, 17 are configured to be independently controllable.
[0023]
Film formation method
Next, a film forming method using the film forming apparatus 1 configured as described above will be described. Here, as an example, a case where an electron transporting light emitting layer composed of Alq3 [8-hydroxyquinoline @ aluminum] generally used for an organic EL element is formed will be described. However, the present invention is not limited to this, and can be widely applied to film formation of a substance capable of obtaining a vapor pressure without decomposition at a certain temperature. As the film formation material S, a solid material and a liquid material are used. Can be used. This is the same in the following embodiments.
[0024]
First, in a state where the substrate W is held and fixed to the substrate support means 19 in the load lock chamber 17,₂Make the atmosphere. Further, the inside of the film forming chamber 15 is also N₂Make the atmosphere. Here, the interior of the load lock chamber 17 may be evacuated to a vacuum and the interior of the film formation chamber 15 may be similarly evacuated to prepare for deposition.
[0025]
Next, as shown in FIG. 2A, the second gate 16 is opened to allow the load lock chamber 17 to communicate with the film forming chamber 15, and then the substrate supporting means 19 is lowered. As a result, the second opening 15a is closed by the substrate support means 19, and the film formation surface Wa of the substrate W held by the substrate support means 19 faces the film formation chamber 15. The substrate W is cooled to 5 ° C. by a cooling mechanism provided in the substrate supporting means 19.
[0026]
On the other hand, the raw material vapor chamber 11 containing the film forming raw material S (for example, solid Alq3) is heated by the heating means 12 in a state where the raw material vapor chamber 11 is evacuated by the exhaust means, and the internal film forming raw material S is sublimated to form the raw material A raw material vapor G is generated in the chamber 11. At this time, the first gate 13 is also heated to prevent solidification of the raw material vapor G on the surface of the first gate 13. In this case, for example, if the film forming raw material S is Alq3, the raw material vapor chamber 11 and the first gate 13 are heated to about 285 ° C. and kept constant.
[0027]
Then, when the raw material vapor G in the raw material vapor chamber 11 is in a predetermined state, that is, when the raw material vapor G has a concentration equal to or higher than the concentration at which the raw material vapor G condenses at the temperature of the substrate W (here, for example, 5 ° C.), FIG. As shown in 2), the first gate 13 of the first opening 11a is opened, and the film forming chamber 15 and the raw material vapor chamber 11 are communicated. As a result, the raw material vapor G filling the inside of the raw material vapor chamber 11 is diffused into the film forming chamber 15 which has become a very narrow space due to the arrangement of the substrate W, and the vapor of the substrate W cooled to 5 ° C. The raw material vapor G is solidified on the film formation surface Wa, and a raw material film (Alq3 film) is deposited and formed on the surface of the substrate W.
[0028]
In this step, the first gate 13 is opened when the concentration of the raw material vapor G becomes equal to or higher than the concentration at which the raw material vapor G is condensed at the temperature of the substrate W. It is desirable to open the first gate 13 when G becomes saturated, and more preferably, when G becomes supersaturated.
[0029]
Next, as shown in FIG. 2C, when it is confirmed by the film thickness monitor 21 that the film deposited on the surface of the substrate W has reached the set film thickness, the first gate 13 of the first opening 11a is formed. Is closed to separate the film forming chamber 15 from the raw material vapor chamber 11. Thereafter, the inside of the film forming chamber 15 is evacuated.
[0030]
Then, when the raw material vapor G in the film forming chamber 15 is exhausted, the substrate supporting means 19 is raised to return the substrate W into the load lock chamber 17 as shown in FIG. Further, the substrate W is taken out of the load lock chamber 17 with the second gate 16 closed and the load lock chamber 17 and the film forming chamber 15 separated.
[0031]
In the film forming apparatus 1 and the film forming method using the same according to the first embodiment described above, the film forming surface Wa of the substrate W is exposed to the raw material vapor G stored in the raw material vapor chamber 11 in advance. The flow and the supply direction of the raw material vapor G do not affect the film forming surface Wa, and the film is formed by uniformly supplying the raw material vapor to the wide film forming surface Wa.
[0032]
In particular, even in the case of performing pattern film formation in which an evaporation mask is provided so as to face the film formation surface Wa of the substrate W, the flow and supply direction of the raw material vapor G affect the film formation surface Wa as described above. Therefore, it is possible to prevent variations in the accuracy of forming a film pattern due to the shadow effect.
[0033]
Therefore, it is possible to form a thin film having a uniform thickness (for example, an Alq3 film) on the film formation surface Wa of the substrate W. Therefore, by applying a film forming method using such a film forming apparatus to the formation of an organic film of an optical element such as an organic EL element, it is possible to form an organic film or an electrode film with a uniform film thickness. Therefore, an element having good characteristics can be obtained.
[0034]
Further, uniform film formation can be achieved on the entire surface of the film formation surface Wa of the substrate W as described above without moving the substrate W (that is, the substrate holding unit 19) without rotating or sliding. The device configuration is prevented from becoming complicated and large, and the device cost can be reduced. Further, this makes it easy to apply a cooling system for the substrate W, which was difficult when the substrate holding means 19 is rotated and slid, and a real-time film thickness measurement system using light. It is possible to diversify the configuration.
[0035]
In the first embodiment described above, the case where the first gate 13 provided in the first opening 11a and the second gate 16 provided in the second opening 15a of the film forming apparatus 1 have a single plate shape. Was exemplified. However, the first gates 13 and 16 are not limited to this. In particular, it is important for the first gate 13 to open and close the first opening 11 a so that the entire surface of the holding surface 20 of the substrate W is exposed to the inside of the film forming chamber 15 almost simultaneously without a time difference.
[0036]
For this reason, as shown in FIG. 3A, the first gate 13a may be configured as a blind type gate made of a plurality of plate-like materials. With such a blind type first gate 13a, as shown in FIG. 3B, the raw material vapor is almost simultaneously applied to each part of the film formation surface Wa of the substrate W held by the substrate support means 19. G can be supplied. This makes it possible to form a film with further improved film thickness uniformity.
[0037]
Further, the raw material vapor chamber 11 of the film forming apparatus 1 described above may be provided with a diffusion means for diffusing the internal gas atmosphere as needed. As such a diffusion means, for example, a stirrer 22 with wings may be provided, or an inert gas introduction pipe 23 and an exhaust pipe 24 may be provided to form a minute gas flow. Thereby, the atmosphere in the raw material vapor chamber 11 is stirred, the state of the raw material vapor G in the raw material vapor chamber 11 is kept uniform, and a more uniform film formation can be performed on the film formation surface Wa of the substrate W. Will be possible.
[0038]
<Second embodiment>
Film forming equipment
FIG. 4 is a schematic configuration diagram illustrating a film forming apparatus according to a second embodiment of the present invention.
[0039]
A different point between the film forming apparatus 2 shown in this figure and the film forming apparatus 1 of the first embodiment described with reference to FIG. 1 is that the supply end of the gas introduction pipe 31 is inserted into the film forming chamber 15. In this respect, the other configuration is the same as that of the first embodiment.
[0040]
That is, the gas introduction pipe 31 is for supplying the second film-forming source gas G2 to the film-forming chamber 15 and is inserted into the film-forming chamber 15 via the valve 32. The second film-forming source gas G2 supplied from the gas supply pipe 31 may be a material that reacts with the film-forming material S to form a film component, or may be doped with the film-forming material S. It may be a material added as an agent. Further, the gas supply pipe 31 may be provided with a carrier gas supply means for introducing the second film-forming source gas G2 into the film-forming chamber 15 as necessary.
[0041]
Note that a plurality of gas introduction pipes 31 may be inserted into the film formation chamber 15. In this case, it is preferable that the gas introduction pipe 31 be inserted evenly from the periphery of the film forming chamber 15 so that the second film forming source gas G2 is uniformly introduced into each part of the film forming chamber 15. Further, the gas introducing pipe 31 may be inserted not into the film forming chamber 15 but into the raw material vapor chamber 11.
[0042]
When the second film-forming material is a solid substance at room temperature, the second film-forming material is supplied as a material vapor. In this case, the gas introduction pipe 31 is connected to the next second material. It is configured as a raw material vapor supply pipe of a raw material supply mechanism described in detail in the third embodiment.
[0043]
Film formation method
A film forming method using the film forming apparatus 2 having such a configuration is performed by the substrate supporting means 19 in the same manner as described with reference to FIGS. (2) The opening 15a is closed, and the film formation surface Wa of the substrate W cooled to 5 ° C. faces the film formation chamber 15, and the raw material vapor chamber 11 is filled with the raw material vapor G in a saturated state.
[0044]
In the above state, as shown in FIG. 4 above, the first gate 13 is opened to connect the film forming chamber 15 with the raw material vapor chamber 11, and at the same time, the valve 32 of the gas introduction pipe 31 is opened. The film forming source gas G2 of the second film forming material is introduced into the film forming chamber 15.
[0045]
Thereby, the raw material vapor G filling the raw material vapor chamber 11 is diffused into the film forming chamber 15, and at the same time, the film forming raw material gas G2 of the second film forming raw material is added to the raw material vapor G, On the surface of the substrate W cooled to 5 ° C., the raw material vapor G containing the second film forming raw material condenses, and a raw material film is formed on the surface of the substrate W. After that, a series of film forming processes is completed in the same manner as in the first embodiment.
[0046]
In the film forming apparatus 2 and the film forming method using the same according to the second embodiment described above, in addition to the effects of the first embodiment, it is possible to form a film made of a two-component raw material. Can be obtained. In particular, when the plurality of gas introduction pipes 31 are evenly inserted from the periphery of the film forming chamber 15, the second film forming material gas G2 for the material vapor G is quickly and uniformly supplied. The raw material vapor G and the film forming raw material gas G2 can be uniformly supplied to Wa. Therefore, it is possible to more uniformly form a film using the two-component material on the film formation surface Wa.
[0047]
In the case where a plurality of gas introduction pipes 31 are provided in the film formation apparatus 2 of the second embodiment, it is possible to perform film formation by supplying different film formation source gases from each gas supply pipe 31. is there. This makes it possible to perform film formation using three-component raw materials and further more.
[0048]
<Third embodiment>
Film forming equipment
FIG. 5 is a schematic configuration diagram illustrating a film forming apparatus according to a third embodiment of the present invention.
[0049]
The difference between the film forming apparatus 3 shown in this figure and the film forming apparatus 1 of the first embodiment described with reference to FIG. 1 is that the raw material vapor supply pipe 41 of the raw material supply mechanism 40 is provided in the raw material vapor chamber 11. The other configuration is the same as that of the first embodiment.
[0050]
That is, the raw material vapor supply pipe 41 is for introducing the raw material vapor G of the heated film-forming raw material S into the raw material vapor chamber 11, and is inserted into the raw material vapor chamber 11 via the valve 42. . The other end of the raw material vapor supply pipe 41 is inserted into a raw material chamber 43 in which the film forming raw material S is stored. The inside temperature of the raw material chamber 43 is freely heated by the heating means 44.
[0051]
Further, a supply end of a carrier gas supply pipe 45 is inserted into the raw material chamber 43, and nitrogen (N) is supplied from a cylinder or a high-purity gas purification device 46.₂), Helium (He), argon (Ar), hydrogen (H₂) Is introduced as a carrier gas. The carrier gas supply pipe 45 is provided with a pressure regulator 47 and a mass flow controller 48 in order from the gas purification device 46 side.
[0052]
In the film forming apparatus 3 configured as described above, all of the piping, containers, and the like from the raw material vapor supply pipe 41 to the mass flow controller 48 are temperature-controlled to a predetermined high temperature. The heating method for controlling the temperature may be an air thermostat method installed in an oven, a method of circulating high-temperature oil, an RF heating method (Radio Frequency heating apparatus: high-frequency induction heating apparatus), or a lamp heating method. Well, there is no particular limitation.
[0053]
The above-described raw material vapor supply pipe 41, valves 42,..., Pressure regulator 47, and mass flow controller 48 constitute a raw material supply mechanism 40. The raw material vapor supply pipes 41 of the plural raw material supply mechanisms 40 may be inserted into the raw material vapor chamber 11.
[0054]
Film formation method
A film forming method using the film forming apparatus 3 having such a configuration will be described. Similar to the first embodiment, the case where an electron transporting light emitting layer made of Alq3 is formed will be described as an example. However, the film forming method of the third embodiment also has a vapor pressure without decomposition at a certain temperature. It is widely applicable to film formation of a substance that can be removed, and as the film formation raw material S, a solid raw material and a liquid raw material can be used.
[0055]
First, in the same manner as described with reference to FIG. 2A in the film forming method of the first embodiment, the second opening 15a is closed by the substrate supporting means 19 holding the substrate W, and cooled to about 5 ° C. The film formation surface Wa of the substrate W is set to face the film formation chamber 15.
[0056]
On the other hand, as shown in FIG. 5, the raw material chamber 43 in which the film forming material S (for example, Alq3) is stored is heated to 285 ° C. by the heating means 44 to sublimate the internal film forming material S and To generate a raw material vapor G.
[0057]
In the above state, the carrier gas (for example, N 2) whose pressure is controlled from the high-purity gas purifier 46 to, for example, 0.2 MPa by the pressure regulator 47 and whose flow rate is controlled by the mass flow controller 48 with high precision.₂) Flows through the carrier gas supply pipe 45. An example of the flow rate is 1000 sccm (standard {cc} / min: flow rate per minute in a standard state). Then, the valve 42 of the raw material vapor supply pipe 41 is opened.
[0058]
As a result, the film forming material vapor G obtained by vaporizing the film forming material S (Alq3) in the material chamber 43 is transported and supplied from the material vapor supply pipe 41 to the material vapor chamber 11 together with the carrier gas.
[0059]
At this time, in order to prevent the raw material vapor G from solidifying, all the piping, containers, etc. from the mass flow controller 48 to the raw material vapor chamber 11 and the first gate 13 are temperature-controlled to a predetermined high temperature (for example, about 285 ° C.). ).
[0060]
Then, the inside of the raw material vapor chamber 11 is set to a supersaturated state, more preferably a saturated state of the raw material vapor G. For example, the raw material vapor G is supplied at a constant temperature in the raw material vapor chamber 11 reduced to about 133 Pa, and the raw material vapor G is supplied in the same manner as described with reference to FIG. The first gate 13 of one opening 11a is opened to allow the film forming chamber 15 to communicate with the raw material vapor chamber 11. As a result, the raw material vapor G is diffused into the film forming chamber 15, and the raw material vapor G is solidified on the surface of the substrate W cooled to 5 ° C., and a raw material film (Alq3 film) is deposited and formed on the surface of the substrate W. Let it. After that, a series of film forming processes is completed in the same manner as in the first embodiment.
[0061]
Even in the film forming apparatus 3 and the film forming method using the same according to the third embodiment described above, the raw material vapor G stored in the raw material vapor chamber 11 in advance is supplied by the raw material vapor supply pipe 41. On the other hand, since the film formation surface Wa of the substrate W is exposed, the flow and supply direction of the raw material vapor G do not affect the film formation surface Wa, as in the first embodiment, and the film formation over a wide area is performed. A film is formed by uniformly supplying the raw material vapor to the surface Wa. Therefore, the same effect as in the first embodiment can be obtained.
[0062]
When the raw material vapor supply pipes 41 of the plural raw material supply mechanisms 40 are inserted into the raw material vapor chamber 11, the raw material vapor G can be more quickly filled in a predetermined state. Further, by adopting such a configuration of the film forming apparatus, it becomes possible to supply raw material vapors of different film forming raw materials to the raw material vapor chamber 11 from the plural raw material vapor supply pipes 41. Can be used to form a film.
[0063]
<Fourth embodiment>
Film forming equipment
FIG. 6 is a schematic configuration diagram illustrating a film forming apparatus according to a fourth embodiment of the present invention.
[0064]
The film forming apparatus 4 shown in this figure has a configuration in which a second material vapor chamber 51 is provided as another material vapor chamber in the film forming apparatus 3 of the third embodiment described with reference to FIG. The other configuration is the same as the film forming apparatus of the third embodiment.
[0065]
That is, the second raw material vapor chamber 51 is provided below the raw material vapor chamber 11 in which the raw material vapor supply pipe 41 is inserted, and the third raw material vapor chamber 11 is provided to face the first opening 11 a of the raw material vapor chamber 11. It is provided so as to communicate with the raw material vapor chamber 11 through the opening 11b.
[0066]
The second raw material vapor chamber 51 has a raw material vapor G ′ of the film forming raw material S ′ stored therein in a predetermined state, can keep the inside secret, and can heat the inside freely. 52 are provided. Although illustration is omitted here, the second raw material vapor chamber 51 is provided with an exhaust unit for exhausting the internal atmosphere and an inert gas supply unit for supplying an inert gas. And
[0067]
The third opening 11b is opened to a wide opening having the same shape as the first opening 11a, and a third gate 53 that can be opened and closed is provided. The third gate 53 is, for example, a single plate that covers the third opening 11b as illustrated, and may be configured to open and close the third opening 11b by sliding in the horizontal direction. However, the third gate 53 is not limited to such a configuration. As described with reference to FIG. 3 in the first embodiment, the third gate 53 is configured as a blind type gate made of a plurality of plate-like materials. It may be something. With such a blind third gate 53, the entire surface of the third opening 11b can be opened without a time difference. The third gate 53 is provided with a heating means (not shown) and can be heated to the same degree as the inside of the raw material vapor chamber 11.
[0068]
Film formation method
In the film forming method using the film forming apparatus 4 having such a configuration, first, as in the third embodiment described with reference to FIG. The cooled film-formation surface Wa of the substrate W faces the film-formation chamber 15. Further, the film-forming material vapor G obtained by vaporizing the film-forming material S in the material chamber 43 is transported and supplied from the material vapor supply pipe 41 to the material vapor chamber 11 together with the carrier gas.
[0069]
Further, in the fourth embodiment, the second raw material vapor chamber 51 in which the film forming raw material S 'is stored is heated by the heating means 52 in a state where the second raw material vapor chamber 51 is evacuated by the exhaust means, and the second component inside is formed. The film raw material S ′ is sublimated to generate a raw material vapor G ′ in the second raw material vapor chamber 51. At this time, the third gate 53 is also heated to prevent solidification of the raw material vapors G and G 'on the surface of the third gate 53.
[0070]
Then, when the inside of the raw material vapor chamber 11 has reached a substantially saturated state (supersaturated state) of the raw material vapor G, and the second raw material vapor chamber 51 has become substantially saturated state (supersaturated state) of the raw material vapor G ′, the first raw material vapor chamber G ′ becomes the first state. The gate 13 and the third gate 53 of the third opening 11b are opened, and the film forming chamber 15, the raw material vapor chamber 11, and the second raw material vapor chamber 51 are communicated.
[0071]
Thus, the raw material vapor G filling the raw material vapor chamber 11 and the raw material vapor G ′ filling the second raw material vapor chamber 51 are diffused into the film forming chamber 15 and cooled to 5 ° C. These raw material vapors G and G ′ are solidified on the surface of W, and a raw material film is formed on the surface of the substrate W. After that, a series of film forming processes is completed in the same manner as in the first embodiment.
[0072]
In the film forming apparatus 4 and the film forming method using the same according to the fourth embodiment described above, in addition to the effects of the first embodiment, it is possible to form a film by depositing a plurality of source vapors G and G ′. Can be obtained. In particular, in the fourth embodiment, the entire surface of the film formation surface Wa of the substrate W is exposed to the raw material vapor G and the raw material vapor G ′ stored in each chamber. For this reason, it is possible to perform more uniform deposition of two components over the entire surface of the deposition surface Wa.
[0073]
<Fifth embodiment>
Film forming equipment
FIG. 7 is a schematic configuration diagram illustrating a film forming apparatus according to a fifth embodiment of the present invention.
[0074]
The difference between the film forming apparatus 5 shown in this figure and the film forming apparatus 1 of the first embodiment described with reference to FIG. 1 is that the inside of the raw material vapor chamber 11 divides the upper first opening. Are divided into a plurality of (here, two) material chambers 61, 61 ', and the substrate holding means 19' is capable of rotating the holding surface 20 of the substrate W.
[0075]
The two raw material chambers 61 and 61 'that divide the raw material vapor chamber 11 store the raw material vapors G and G' of the film forming raw materials S and S 'in a predetermined state, respectively, and keep the inside confidential. It is possible.
[0076]
The raw material vapor chamber 11 is provided with a heating means 12 for heating the inside and the inner wall of the raw material chambers 61, 61, respectively. It is preferable that the heating means 12 can control the temperature of each of the raw material chambers 61, 61 individually.
[0077]
In addition, at least one of the raw material chambers 61, 61 is provided with the gas supply pipe (31) of the fourth embodiment described with reference to FIG. 4 or the raw material of the fifth embodiment described with reference to FIG. A steam supply pipe (41) may be provided.
[0078]
Although not shown here, each raw material chamber 61 has an exhaust means for exhausting the internal atmosphere, a gas supply means for supplying a gas, and a stirring means for the internal atmosphere. Means shall be provided.
[0079]
The first opening 11a in the upper part of the raw material vapor chamber 11 is divided into the first opening portions 61a, 61a of the raw material chambers 61, 61. Each of the first opening portions 61a, 61a is formed in a semicircular or fan shape with respect to the center of the film formation surface Wa of the substrate W. Further, it is assumed that first gates 62, 62 that can be opened and closed are provided in the first opening portions 61a, 61a, respectively. The first gates 62 have the same configuration as the first gate (13) described in each of the above embodiments.
[0080]
The substrate holding means 19 ′ is rotatable while holding the holding surface 20 of the substrate W in parallel with the first openings 61 a. Therefore, in a state where the second opening 15a is closed by the substrate holding means 19 ', an interval between the substrate holding means 19' and the inner wall of the load lock chamber 17 is large enough to allow the rotation of the substrate holding means 19 '. Shall be provided.
[0081]
Film formation method
A film forming method using the film forming apparatus 5 having such a configuration is performed as follows.
[0082]
First, the second opening 15 a is closed by the substrate supporting means 19 ′, and the film formation surface Wa of the substrate W cooled to 5 ° C. faces the film formation chamber 15. Then, the substrate supporting means 19 'is rotated.
[0083]
The inside of each of the raw material chambers 61, 61 is made substantially saturated (supersaturated) of the raw material vapors G, G ', respectively. In this case, as described in the first embodiment, the raw material vapors G, G ′ may be generated by sublimating the film forming raw materials S, S ′ stored in the respective raw material chambers 61 by heating. As described in the fourth embodiment, the raw material vapors G, G ′ may be supplied into the raw material chambers 61, 61 by external supply, and the supply modes for the raw material chambers 61, 61 are different. May be.
[0084]
In the above state, the first gate 62 of the first openings 61a, 61a is opened, and the film forming chamber 15 and the source chambers 61, 61 are communicated.
[0085]
As a result, the raw material vapors G and G ′ that have filled the raw material vapor chamber 11 are diffused into the film forming chamber 15, and the raw material vapor G and G ′ are deposited on the film forming surface Wa of the substrate W which is cooled to 5 ° C. in a rotated state. The vapors G and G ′ are sequentially solidified, and a raw material film is deposited and formed on the surface of the substrate W. After that, a series of film forming processes is completed in the same manner as in the first embodiment.
[0086]
In the film forming apparatus and the film forming method using the film forming apparatus described above, it is possible to form a film by sequentially depositing a plurality of kinds (here, two kinds of film forming materials) on the film forming surface Wa of the substrate W. Therefore, it is possible to form a film by so-called delta doping in which a different component is added at a predetermined height in the film of a certain component.
[0087]
In the film forming apparatus 5 of the fifth embodiment, the ratio of the deposited film thickness of each raw material vapor G, G 'is controlled by the ratio of the opening area of the first opening portions 61, 61' shaped like a fan. Will be done. Further, the deposited film thickness is controlled by the rotation speed of the substrate support means 19 ', and the entire film thickness is controlled by the opening time of the first gates 62.
[0088]
Note that the film forming apparatuses of the third to fifth embodiments can be combined with the film forming apparatus of the second embodiment. In this case, the gas introduction pipe 31 described with reference to FIG. 4 in the second embodiment is inserted into the film forming chamber (or the raw material vapor chamber) of the film forming apparatus according to the third to fifth embodiments. . This makes it possible to form a film by further supplying a film forming component from the gas introduction pipe 31.
[0089]
【The invention's effect】
As described above, according to the film forming apparatus and the film forming method of the present invention, by exposing the film forming surface of the substrate to the raw material vapor previously stored in the raw material vapor chamber, the flow and supply of the raw material vapor Film formation can be performed on the entire surface of the film formation surface without affecting the direction. For this reason, it is possible to form a film by uniformly supplying the raw material vapor to a film forming surface having a large area, and it is possible to form a thin film having a uniform film thickness. As a result, by applying the present invention to the formation of an organic film of an optical element such as an organic EL element, an organic film or an electrode film having a uniform film thickness can be formed, and thus an element having good characteristics can be obtained. become.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of a film forming apparatus according to a first embodiment.
FIG. 2 is a process chart for explaining a film forming method using the film forming apparatus of the first embodiment.
FIG. 3 is a configuration diagram showing a change example of a gate (first gate) in a film forming apparatus.
FIG. 4 is a schematic configuration diagram of a film forming apparatus according to a second embodiment.
FIG. 5 is a schematic configuration diagram of a film forming apparatus according to a third embodiment.
FIG. 6 is a schematic configuration diagram of a film forming apparatus according to a fourth embodiment.
FIG. 7 is a schematic configuration diagram of a film forming apparatus according to a fifth embodiment.
[Explanation of symbols]
1, 2, 3, 4, 5 ... film forming apparatus, 11 ... raw material vapor chamber, 11a ... first opening, 11b ... third opening, 12 ... heating means, 13, 62 ... first gate, 15 ... film forming chamber Reference numeral 15a: second opening, 16: second gate, 17: load lock chamber, 19, 19 ': substrate support means, 20: holding surface, 31: gas introduction pipe, 41: raw material vapor supply pipe, 51: second 53, a third gate, 61, a raw material chamber, 61a, a first opening, G, G ', a raw material vapor, S, S', a film forming raw material, W, a substrate, and Wa, a film forming surface.

Claims (10)

A film forming apparatus for forming a thin film on a film forming surface of a substrate,
A raw material vapor chamber having a first opening formed with a gate that can be opened and closed and formed in substantially the same shape as the film forming surface of the substrate, and in which raw material vapor of the film forming raw material is stored in a predetermined state;
A film forming apparatus, comprising: substrate support means for holding the substrate with the film forming surface of the substrate facing the first opening. The film forming apparatus according to claim 1,
In the raw material vapor chamber, a film forming chamber provided with a second opening that is communicated with the raw material vapor chamber through the first opening and that is arranged to face the first opening is disposed,
The film forming apparatus, wherein the substrate holding means is capable of closing the second opening with a holding surface holding the substrate facing the film forming chamber. The film forming apparatus according to claim 2,
A film formation apparatus, wherein a gas introduction pipe is inserted into the film formation chamber. The film forming apparatus according to claim 1,
The film forming apparatus, wherein the substrate supporting means is provided with a cooling mechanism for cooling the substrate held on the holding surface. The film forming apparatus according to claim 1,
A film forming apparatus, wherein a heating means for heating the film forming material stored inside is provided in the raw material vapor chamber. The film forming apparatus according to claim 1,
A film forming apparatus, wherein a supply pipe for a raw material vapor that has been vaporized by heating is inserted into the raw material vapor chamber. The film forming apparatus according to claim 6,
The raw material vapor chamber has a third opening provided opposite to the first opening and having a gate which can be opened and closed, and the second raw material vapor chamber is communicated through the third opening. A film forming apparatus characterized by the above-mentioned. The film forming apparatus according to claim 1,
The raw material vapor chamber is divided into a plurality of raw material chambers while dividing the first opening,
A film forming apparatus, wherein the substrate holding means is capable of rotating its holding surface. After filling the raw material vapor chamber with the raw material vapor of the film forming raw material to a predetermined state, the film forming surface of the substrate is exposed to an atmosphere in the raw material vapor chamber filled with the raw material vapor, and the film forming raw material is applied to the film forming surface. A film forming method characterized by depositing. The film forming method according to claim 9,
A film forming method, wherein the substrate is kept at a temperature lower than a freezing point of the film forming raw material.

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