JP2004031461A5

JP2004031461A5 -

Info

Publication number: JP2004031461A5
Application number: JP2002182259A
Authority: JP
Filing date: 2002-06-21
Publication date: 2005-04-21
Anticipated expiration: 2022-06-21

Description

本発明の請求項４に係るプラズマ表面処理法は、請求項１乃至請求項３記載のプラズマ表面処理において、真空容器内に設置された接地電位の移送手段により、一方から未処理物を連続的に供給し、中間部で当該プラズマ表面処理を施し、他方から既処理物を連続的に取り出し、連続一貫プラズマ表面処理を行なうように構成した。 A plasma surface treatment method according to a fourth aspect of the present invention is the plasma surface treatment according to the first to third aspects, wherein the means for transferring the ground potential disposed in the vacuum vessel continuously treats the unprocessed material from one side. supplied to, subjected to the plasma surface treatment in the middle section, and eject the previously treated continuously from the other, and configured to perform continuous consistent plasma surface treatment.

本発明の請求項６に係るプラズマ表面処理装置は、接地された真空容器と、該真空容器の内部に導電性の支持体又は運動・移動機構に支持されて配置され接地電位にある被処理物と、前記真空容器の内部に正電位にバイアスされたプラズマを発生させるプラズマ発生用電源及びプラズマ発生用アンテナ又は電極とからなり、前記被処理物の周囲を覆う接地電位の導電性包囲体を設けた構成とした。 According to a sixth aspect of the present invention, there is provided a plasma surface treatment apparatus comprising: a grounded vacuum vessel; and an object to be treated which is disposed on the inside of the vacuum vessel and supported by a conductive support or movement / movement mechanism and is at ground potential. And a plasma generation power source for generating a plasma biased to a positive potential and an antenna or electrode for plasma generation inside the vacuum vessel, and a conductive enclosure of a ground potential covering the periphery of the object is provided. and it has a structure.

【００３２】ここで、γはイオンの種類とエネルギーＥ(ｅＶ)、そして被処理物の材質や表面状態で変わるが、エネルギーが概ね１ｋｅＶを超えると、
【数３】
γ＝αＥ ^1/2 ・・・・（３）
と近似できる。αは係数である。γの例は文献（例えば、M.M. Shamin, J.T. Scheuer, R.P. Fetherton and J.R. Conrad: J. Appl. Phys., 70,4756(1991)）に記されている。 Here, γ changes depending on the type of ion and energy E (eV), and the material and surface state of the object to be treated, but when the energy exceeds approximately 1 k e V,
[Equation 3]
γ = αE ^1/2 (3)
It can be approximated as α is a coefficient. Examples of γ are described in the literature (for example, MM Shamin, JT Scheuer, RP Fetherton and JR Conrad: J. Appl. Phys., 70, 4756 (1991)).

次に、本発明を実施するための基本構成と動作を、前述の従来技術（図１１及び図１２を参照）と対比させて、図２の装置構成と図３の被処理物の周囲のイオンシース形成と電位分布図を用いて説明する。図２において、接地された真空容器１１の内部に、別に設けたプラズマ発生用電源１６及びプラズマ発生用アンテナ又は電極１５によってプラズマ１２を発生させる。プラズマ発生法は、熱陰極を用いた直流アーク放電、高周波容量結合放電、高周波誘導結合放電、マイクロ波放電、ＥＣＲ放電等が用いられる。 Next, the basic configuration and operation for practicing the present invention are compared with the above-mentioned prior art (see FIGS. 11 and 12), and the apparatus configuration of FIG. 2 and ions around the object of FIG. It demonstrates using sheath formation and an electric potential distribution map. In FIG. 2, a plasma 12 is generated by a plasma generating power supply 16 and a plasma generating antenna or electrode 15 separately provided in the grounded vacuum vessel 11. As a plasma generation method, a direct current arc discharge using a hot cathode, a high frequency capacitively coupled discharge, a high frequency inductively coupled discharge, a microwave discharge, an ECR discharge or the like is used.

本願発明によって、上述の課題１乃至課題４がどのように解決されるかを説明する。正パルスバイアス法および装置では、被処理物１０は真空容器１１と同じ接地電位におかれるので、まず課題１及び課題２が解決する。真空容器１１内に設置された、これも接地電位の運動・移動機構１９を利用して、一方から未処理物を連続的に供給し、中間部で当該プラズマ表面処理を施し、他方から既処理物を連続的に取り出し、連続一貫プラズマ表面処理プロセスが構成できる。これによって表面処理の生産性が著しく向上する。 It will be described how the above-mentioned problems 1 to 4 are solved by the present invention. In the positive pulse bias method and apparatus, since the object to be processed 10 is at the same ground potential as the vacuum vessel 11, problems 1 and 2 are solved first. An untreated object is continuously supplied from one side using the movement / movement mechanism 19 of the ground potential installed in the vacuum vessel 11, and the plasma surface treatment is performed in the middle part, and the other surface is treated from the other side. to eject the objects continuously can be configured a continuous consistent plasma surface treatment process. This significantly improves the productivity of the surface treatment.

マスフローコントローラ（図示せず）を介してアルゴンガスが導入され、バラトロン真空計（図示せず）で常に０.１Ｐａの圧力に調整される。石英管の外側にはループアンテナが巻かれ、１４０ＭＨｚ、２０Ｗの高周波電力を供給して、アルゴンの誘導放電プラズマが生成される。石英管の上部には、真空フィードスルーを介して直径３ｃｍの陽極（Ｓ_A=7cm²）が導入される。陽極もSUS304製で、裏面はセラミックスで絶縁されている。 Argon gas is introduced through a mass flow controller (not shown) is adjusted to a pressure always 0.1 P a in Baratron vacuum gauge (not shown). A loop antenna is wound on the outside of the quartz tube, and a 140 MHz, 20 W high frequency power is supplied to generate an inductive discharge plasma of argon. At the top of the quartz tube, a 3 cm diameter anode (S _A = 7 cm ² ) is introduced via a vacuum feedthrough. The anode is also made of SUS304, and the back is insulated by ceramics.

本実施例では、２つのケースを比較した。ケース１は、Ｓ_K ＝３１１ｃｍ²，Ｓ_K/Ｓ_A＝４４であり、ケース２は、絶縁材を全て除去した場合で、Ｓ_K ＝５８０ｃｍ²，Ｓ_K/Ｓ
＝３６８である。一方、正パルスバイアスが印加されるための理論的条件は、式（６）から、１０ｋｅＶのアルゴン正イオン（Ａｒ+）として、γの経験値を用いると、 In the present example, two cases were compared. Case 1 is S _K = 311 cm ² and S _K / S _A = 44, and Case 2 is the case where all the insulating material is removed, S _K = 580 cm ² , S _K / S
= 368. On the other hand, theoretical conditions for applying a positive pulse bias are as follows from equation (6), using the empirical value of γ as an argon positive ion (Ar +) of 10 keV:

Claims

The transfer means of the installed ground potential in a vacuum vessel, and continuously feeding the raw material from one, subjecting the plasma surface treatment in the middle section, and eject the previously treated continuously from the other, continuous The plasma surface treatment method according to any one of claims 1 to 3, wherein the uniform plasma surface treatment is performed.