JP2004014960A - Exposure apparatus and exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure apparatus and an exposure method whereby the contaminants present in its inside can be removed therefrom even under a vacuum atmosphere. <P>SOLUTION: The exposure apparatus has a vacuum chamber 11, an exposure light source 21 provided in the vacuum chamber 11, and a substrate mounting table 22 provided on the path of an electron beam e emitted from the exposure light source 21. Further, this exposure apparatus has in the vacuum chamber 11 an ultraviolet-light irraduation means 41 for projecting an ultraviolet light on the region to remove contaminants therefrom and a gas feeding means 42 for blowing a gas on the ultraviolet-light irradiation region. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an exposure apparatus and an exposure method, and more particularly to an exposure apparatus and an exposure method using a charged particle beam for performing exposure in a vacuum atmosphere or an ultra-short wavelength ultraviolet ray (Extreme Ultra Violet (EUV)) as exposure light.
[0002]
[Prior art]
With the progress of high integration of semiconductor elements, the wavelength of an exposure light source of an exposure apparatus used in a photolithography process has been shortened.
However, the exposure light in the short wavelength region has a high exposure energy, and the irradiation easily causes organic substances and the like contained in the resist on the substrate to be exposed to be chemically decomposed and vaporized, thereby causing contamination in the exposure apparatus.
[0003]
In order to remove the contamination, a method for removing the contamination using a photocatalyst (JP-A-2000-284468, JP-A-2000-284469, and JP-A-2000-286187) or an exposure apparatus is used. Methods of incorporating a cleaning means (Japanese Patent Application Laid-Open Nos. 11-224839 and 2000-91207) have been reported.
[0004]
On the other hand, in recent years, a charged particle beam exposure technique capable of high-resolution pattern exposure has attracted attention. In the charged particle beam exposure technology, exposure is performed in a vacuum atmosphere using a charged particle beam such as an electron beam as exposure light, and a fine pattern of 100 nm or less can be easily formed on a semiconductor substrate or a mask. .
[0005]
FIG. 4 shows a charged particle beam exposure apparatus used for, for example, a low energy electron projection lithography (LEEPL).
As shown in FIG. 4, an exposure light source 21 that emits an electron beam e as exposure light is disposed in a vacuum chamber 11 that performs exposure, and a substrate is placed on a path of the electron beam e emitted from the exposure light source 21. The mounting table 22 is arranged.
An exposure mask 31 for transferring the exposure pattern 32 onto the substrate W is provided between the exposure light source 21 and the substrate mounting table 22 on the path of the electron beam e.
[0006]
When performing exposure using the charged particle beam exposure apparatus having such a configuration, first, a substrate W having a surface coated with a resist (not shown) is mounted on the substrate mounting table 22. Subsequently, an electron beam e is emitted from the exposure light source 21 and passes through various electron optical systems to irradiate the exposure mask 31. Then, the electron beam e ′ formed by passing through the exposure pattern 32 of the exposure mask 31 is irradiated to the resist on the surface of the substrate W, and the exposure pattern 32 is transferred to the resist.
[0007]
[Problems to be solved by the invention]
However, even in the above-described charged particle beam exposure apparatus, contamination in the exposure apparatus is an important problem, and contamination such as organic substances vaporized from a resist on a substrate floats in the exposure apparatus, and the charged particle beam is exposed. Tend to adhere to the electron optical system, the exposure mask, and the like arranged on the path of the above, and to be fixed.
[0008]
Contamination fixed in this way is charged by electrons and ions by exposure to charged particle beams, and this charged charge bends the path of the charged particle beams at the time of exposure, lowering the positional accuracy of the transferred exposure pattern. There was a problem of doing.
In particular, contamination easily adheres to the exposure surface side of the exposure mask, and when the contamination adheres to the exposure pattern, not only the positional accuracy but also the line width accuracy of the exposure pattern decreases, which has been an important problem. .
[0009]
In order to solve such a problem, a method of decomposing generated contamination by using a photocatalyst in a charged particle beam exposure apparatus (charged particle beam apparatus) (Japanese Patent No. 3047293) has been proposed. However, a sufficient effect was not obtained in removing the adhered contamination.
Further, since the method of incorporating the cleaning means into the exposure apparatus as described in the prior art is a method for an exposure apparatus using ultraviolet light or X-rays as an exposure light source, a charged particle beam for performing exposure in a vacuum atmosphere is used. It has been difficult to apply it to an exposure apparatus as it is.
[0010]
Therefore, there has been a demand for an exposure apparatus and an exposure method that can remove contamination in an exposure apparatus that performs exposure in a vacuum atmosphere.
[0011]
[Means for Solving the Problems]
In order to solve the above-described problems, a first exposure apparatus of the present invention includes a vacuum chamber, an exposure light source provided in the vacuum chamber, and an exposure light source provided on a path of exposure light emitted from the exposure light source. An exposure apparatus having a substrate mounting table provided therein, an ultraviolet irradiation means for irradiating an ultraviolet ray to an area for removing contamination, and a gas supply means for blowing a gas to the ultraviolet irradiation area in the vacuum chamber. It is characterized by:
[0012]
According to such an exposure apparatus, in a vacuum chamber under a vacuum atmosphere, by irradiating ultraviolet rays to a region from which contamination is removed by ultraviolet irradiation means, contamination made of an organic substance in an ultraviolet irradiation region in the vacuum chamber is obtained. Decomposed.
Thereafter, by blowing gas to the ultraviolet irradiation region by the gas supply means, the decomposed organic matter can be removed from the inside of the vacuum chamber, so that the contamination can be prevented from re-adhering to the inside of the vacuum chamber.
[0013]
In particular, when the gas supply means has a plurality of flow paths therein along the gas traveling direction and includes a nozzle formed so that the opening width increases toward the gas outlet, By flowing the gas through the plurality of flow paths, the gas blowing direction is controlled in a direction along the shape of the gas blowing port, and the gas blowing port is directed to the ultraviolet irradiation region, so that the gas flows in a laminar state in the ultraviolet irradiation region. Gas can be sprayed efficiently. Further, since the opening width is formed wider toward the gas outlet, the gas can be reliably blown over the entire ultraviolet irradiation region.
[0014]
Further, when the gas supply means is provided with a driving means for controlling the gas blowing direction, by blowing the gas to the ultraviolet irradiation region while controlling the gas blowing direction, it is possible to operate under a vacuum atmosphere. Also, gas can be reliably and efficiently blown over the entire ultraviolet irradiation region. It is also possible to adjust the position at which the gas is blown while checking the removal status of the contamination.
[0015]
Further, the second exposure apparatus of the present invention is an exposure apparatus comprising: a vacuum chamber for performing exposure; and a mask loading chamber provided adjacent to the vacuum chamber and for loading an exposure mask in the vacuum chamber. Wherein the mask loading chamber is provided with ultraviolet irradiation means for irradiating the exposure mask with ultraviolet light, and gas supply means for blowing gas to the ultraviolet irradiation area.
[0016]
According to such an exposure apparatus, the contamination fixed to the exposure mask can be decomposed by irradiating the exposure mask with ultraviolet rays in the mask loading chamber. In addition, since the mask loading chamber is usually maintained in a vacuum atmosphere, it is possible to remove the decomposed contamination from the mask loading chamber by spraying a gas onto the ultraviolet irradiation area. Can be prevented from re-adhering.
Further, while exposure is performed using the exposure mask in the vacuum chamber, contamination attached to the exposure mask to be used next in the mask loading chamber can be removed.
[0017]
Further, the exposure method of the present invention is an exposure step of exposing a substrate in a vacuum chamber, and, while covering the substrate with an ultraviolet light shielding shutter, while irradiating ultraviolet rays to a region in the vacuum chamber for removing contamination, A contamination removing step of removing contamination by blowing gas onto the ultraviolet irradiation region.
[0018]
According to such an exposure method, while the substrate is covered with the ultraviolet light shielding shutter, the region in the vacuum chamber where the contamination is to be removed is irradiated with ultraviolet light to decompose the contamination in the ultraviolet irradiation region, and the ultraviolet irradiation region is decomposed. Removes contamination in the vacuum chamber without affecting the substrate even when the substrate is carried into the vacuum chamber by removing the decomposed contamination by blowing gas to the vacuum chamber can do.
Therefore, when performing multiple exposures by changing the exposure position of the substrate, it is possible to frequently remove contamination between exposure steps, so that the inside of the vacuum chamber can be maintained in a cleaner state. It is possible.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
(1st Embodiment)
FIG. 1A is a schematic configuration diagram of a charged particle beam exposure apparatus for explaining an embodiment of the exposure apparatus of the present invention.
The charged particle beam exposure apparatus shown in this figure includes, in addition to the conventional exposure apparatus described with reference to FIG. 4, an ultraviolet irradiation unit 41 for removing contamination and a gas supply unit 42, and further includes a substrate mounting table 22. An ultraviolet light shielding shutter 43 that is movable between the exposure mask 31 and the exposure mask 31 is provided.
Here, an exposure apparatus that removes contamination adhered to the exposure pattern 32 of the exposure mask 31 will be described as an example.
[0020]
As shown in FIG. 1A, the charged particle beam exposure apparatus is provided with a vacuum chamber 11 for performing exposure, and is provided adjacent to the vacuum chamber 11 for loading an exposure mask 31 into the vacuum chamber 11. A mask loading chamber 12 is provided.
[0021]
In the vacuum chamber 11, an exposure light source 21 composed of an electron gun that emits an electron beam e as exposure light is disposed. The exposure light source 21 is disposed on a path of the electron beam e emitted from the exposure light source 21 in a horizontal direction (xy direction). The movable substrate mounting table 22 is disposed.
By moving the substrate mounting table 22 in the xy directions, the entire area of the surface of the substrate W mounted on the substrate mounting table 22 can be moved to the irradiation range of the electron beam e.
An exposure mask 31 used for transferring the exposure pattern 32 to the substrate W and a mask holding member for holding the exposure mask 31 are located on the path of the electron beam e and between the exposure light source 21 and the substrate mounting table 22. (Not shown) is provided.
[0022]
Further, between the exposure light source 21 and the exposure mask 31, an aperture 23 for restricting the electron beam e and a condenser lens 24 for making the traveling direction parallel are arranged on the path of the electron beam e in order from the exposure light source 21 side. Is arranged. Below the condenser lens 24, there are a pair of main deflector sets 25 and 26 for the purpose of deflecting the electron beam e so as to be perpendicularly incident on the exposure mask 31 so as to surround the path of the electron beam e. Further, fine adjustment deflectors 27 and 28 for fine adjustment of the irradiation position of the electron beam e are arranged.
[0023]
Here, the ultraviolet irradiation means 41 characteristic of the present invention is provided as a pair between the fine adjustment deflector 28 in the vacuum chamber 11 and the exposure mask 31, and can irradiate the exposure pattern 32 of the exposure mask 31 with ultraviolet light. It is arranged in a state.
Here, in order to remove the contamination fixed to the exposure pattern 32, the ultraviolet irradiation means 41 is disposed between the fine adjustment deflector 28 and the exposure mask 31 so that the electron beam e Ultraviolet rays were irradiated from the irradiation surface side, and gas was blown.
However, the present invention is not limited to this, and the ultraviolet irradiation means 41 may be disposed at a position where the ultraviolet light can be irradiated to the region in the vacuum chamber 11 from which the contamination is to be removed and does not hinder the exposure.
[0024]
Further, the gas supply unit 42 includes, for example, a temperature control unit 51 installed in contact with the outside of the vacuum chamber 11, and a nozzle 52 connected to the temperature control unit 51 and introducing a gas into the vacuum chamber 11. .
The temperature of the gas supplied by the temperature control means 51 is preferably 20 to 27 ° C., which is the same as the temperature of the environment in which the exposure apparatus is installed, so that the temperature of the exposure mask 31 does not expand or contract due to the blown gas.
In this case, if the supplied gas can maintain the above-mentioned temperature without controlling the temperature, the temperature control means 51 may not be provided.
[0025]
The nozzle 52 connected to the temperature control means 51 has a gas outlet 53 at its tip, and guides the gas to the ultraviolet irradiation region in the vacuum chamber 11, that is, the exposure pattern 32 here from the exposure surface side. The nozzle 52 is provided in a possible orientation, and is arranged at a position where it does not hinder exposure.
Here, FIG. 1B is an enlarged view of a main portion near the gas outlet 53 of the nozzle 52 in the present embodiment.
[0026]
As shown in FIG. 1B, the inside of the nozzle 52 has a plurality of flow paths along the gas traveling direction C, and the opening width increases toward the gas outlet 53 at the tip of the nozzle 52. It is formed so that it becomes.
The supplied gas passes through a plurality of flow paths in the nozzle 52, the blowing direction C ′ of the gas is controlled in a direction along the shape of the gas blowing port 53, and is blown onto the exposure pattern 32 in a laminar flow state. . Further, since the nozzle 52 is formed so that the opening width increases toward the gas outlet 53, the gas is blown over the entire area of the exposure pattern 32 to which the gas outlet 53 is directed.
[0027]
Here, an example in which the gas blowing direction C ′ is controlled by a specific shape of the nozzle 52 has been described. However, the gas supply unit 42 of the present invention is not limited to the above shape, and may be a predetermined shape under a vacuum atmosphere. It is only necessary that the gas can be reliably blown into the region.
[0028]
Further, in the vacuum chamber 11, an ultraviolet light shielding shutter 43 is provided, which is movable between a position covering the substrate mounting table 22 with respect to ultraviolet light emitted from the ultraviolet irradiation means 41 and a position off the path of the electron beam e. Have been.
The ultraviolet light shielding shutter 43 in the present embodiment protrudes from, for example, a side wall of the vacuum chamber 11 and is provided so as to be disposed between the exposure mask 31 and the substrate mounting table 22.
As described above, since the ultraviolet light shielding shutter 43 is used to shield the substrate W mounted on the substrate mounting table from ultraviolet light, it is preferable that the ultraviolet light shielding shutter 43 is disposed near the substrate mounting table 22. If possible, the arrangement position is not limited to the above.
When the contamination is removed in a state where the substrate W is not carried into the vacuum chamber 11, the ultraviolet light shielding shutter 43 may not be provided.
[0029]
Next, an exposure method using the above-described exposure apparatus will be described.
First, the exposure mask 31 is loaded from the mask loading chamber 12 into the vacuum chamber 11 maintained in a vacuum atmosphere, and the exposure mask 31 made of, for example, a stencil mask is mounted on a mask holding member (not shown).
[0030]
Next, the substrate W made of, for example, a semiconductor wafer is carried into the vacuum chamber 11, the substrate W is mounted on the substrate mounting table 22, and the exposure position of the substrate W and the exposure mask 31 are aligned.
At this time, it is assumed that a resist (not shown) for transferring the exposure pattern 32 of the exposure mask 31 is applied on the substrate W.
[0031]
Subsequently, the exposure light source 21 is turned on, the electron beam e emitted from the exposure light source 21 is formed by the aperture 23 and the condenser lens 24, and the irradiation position of the electron beam e is adjusted by the deflectors 25 to 28 described above. Irradiation is performed on the exposure mask 31 while scanning. Then, the electron beam e ′ formed by passing through the exposure pattern 32 of the exposure mask 31 is irradiated to the resist on the surface of the substrate W, and the exposure pattern 32 is transferred to the resist.
[0032]
Next, an ultraviolet light shielding shutter 43 is arranged to protrude from the side wall of the vacuum chamber 11 between the exposure mask 31 and the substrate W mounted on the substrate mounting table 22.
Then, the substrate W is covered with the ultraviolet light shielding shutter 43 and the exposure pattern 32 is irradiated with ultraviolet light by the ultraviolet irradiation means 41 in a state where the substrate W is shielded from ultraviolet light.
[0033]
Here, the ultraviolet ray usually refers to an electromagnetic wave having a wavelength of 400 nm or less. Since the ultraviolet ray in this case is used for decomposing the contamination, a short-wavelength ultraviolet ray having strong energy is desirable.
In particular, in the case of irradiating ultraviolet rays having a wavelength of 180 nm or less, if the gas supplied from the gas supply means 42 is a gas containing oxygen in a step described later, the oxygen becomes excited oxygen atoms having high activity. The removal rate is high, which is more preferable (Japanese Patent No. 034720).
[0034]
Subsequently, an inert gas such as nitrogen, helium, neon, or argon is blown from the gas supply unit 42 to the ultraviolet irradiation region in a state where the ultraviolet irradiation is performed. Accordingly, since the inside of the vacuum chamber 11 is maintained in a vacuum atmosphere, it is possible to remove the decomposed contamination together with the inert gas from the inside of the vacuum chamber 11 without providing any exhaust means.
At this time, the temperature of the supplied gas is controlled to 20 to 27 ° C. by the temperature control unit 51.
[0035]
Note that the present invention is not limited to the above gas, and a gas such as oxygen, hydrogen, steam, ozone, or hydrogen peroxide vapor may be blown. Thereby, the decomposed organic matter is converted into carbon dioxide gas or hydrocarbon gas and removed from the vacuum chamber 11.
Further, here, the gas is blown to the ultraviolet irradiation region while irradiating the ultraviolet light, but the gas may be blown after the ultraviolet irradiation.
[0036]
As described above, while removing the contamination attached to the exposure mask 31, the substrate W is moved to the next exposure position by moving the substrate mounting table 21 in the xy directions.
[0037]
In the present embodiment, first, an exposure step is performed, and then a step of removing contamination is performed. However, when contamination occurs in the vacuum chamber 11 in an initial state, the contamination is removed. The process may be performed first.
In this case, if the contamination of the exposure mask 31 is removed before the substrate W is carried into the vacuum chamber 11, the substrate W need not be covered with the ultraviolet light shielding shutter 43, and the influence of the ultraviolet irradiation on the substrate W is taken into consideration. This is preferable because it is not necessary.
[0038]
Further, in the present embodiment, in order to improve the production efficiency, the step of removing the contamination when moving the exposure position of the substrate W is performed in parallel, but the present invention is not limited to this, and the present invention is not limited thereto. And either step may be performed first.
The step of removing contamination does not need to be performed every time between exposure steps, and is set as appropriate according to the state of occurrence of contamination in the vacuum chamber 11.
[0039]
According to such an exposure apparatus and an exposure method, the ultraviolet irradiation means 41 is disposed at a position where the exposure pattern 32 can be irradiated with ultraviolet light, so that the contamination of organic substances and the like attached to the exposure pattern 32 is decomposed by the ultraviolet light. be able to.
[0040]
Further, a gas supply means 42 is arranged so as to blow gas onto the exposure pattern 32, and the inside of the nozzle 52 has a plurality of flow paths along the gas traveling direction C and is directed toward the gas outlet 53. The opening width is formed so as to gradually increase. Thereby, by controlling the gas blowing direction C ′ along the shape of the gas blowing port 53 and blowing the gas in a laminar flow state, the gas can be efficiently blown to the exposure pattern 32. Gas can be blown over the entire exposure pattern 32.
[0041]
Therefore, even under a vacuum atmosphere, the gas can be reliably blown onto the exposure pattern 32, so that the contamination decomposed by the ultraviolet irradiation can be reliably removed, and the exposure pattern 32 transferred onto the substrate W can be removed. Position accuracy and line width accuracy can be improved.
Further, by removing the contamination from the inside of the vacuum chamber 11 by decomposing the contamination in a vacuum atmosphere, the re-adhesion of the contamination can be prevented, and the inside of the vacuum chamber 11 can be further cleaned.
[0042]
Further, since the vacuum chamber 11 is provided with a movable ultraviolet light shielding shutter 43 between the substrate mounting table 22 and the exposure mask 31, the exposure is performed while the substrate W is mounted on the substrate mounting table 22. Since the contamination of the pattern 32 can be removed, it is possible to frequently remove the contamination attached to the exposure pattern 32 during the exposure process.
[0043]
In addition, since the gas supply unit 42 includes the temperature control unit 51, the expansion and contraction due to the temperature of the part to which the gas is blown can be suppressed.
Further, conventionally, when the accelerated electron beam e is applied to the exposure mask 31, the exposure energy causes thermal expansion to deteriorate the line width accuracy of the exposure pattern 32. If the gas supply means 42 is provided with the temperature control means 51 as described above, the temperature of the supplied gas can be adjusted to be low. Therefore, the gas can be cooled by spraying the gas onto the exposure mask 31. .
[0044]
In the present embodiment, an example in which the mask loading chamber 12 is provided has been described. However, an exposure apparatus in which the exposure mask 31 is placed in a case and directly carried into the vacuum chamber 11 may be used.
[0045]
(2nd Embodiment)
In the first embodiment, an example in which the gas blowing direction C ′ is controlled by the shape of the nozzle 52 of the gas supply unit 42 has been described. However, in the present embodiment, the gas supply unit 42 controls the gas blowing direction C ′. An example provided with a driving unit for this will be described.
The configuration other than the nozzle 52 is the same as that of the first embodiment, and the contamination of the exposure pattern 32 on the exposure mask 31 is removed.
[0046]
FIG. 2 is an enlarged view of a main part near the gas outlet 53 of the nozzle 52 in the present embodiment.
As shown in FIG. 2, a diaphragm 54 connected to a support shaft 55 is disposed at the end of the gas outlet 53, and the support shaft 55 is connected to a driving unit (not shown). By rotating the support shaft 55 by the driving means with respect to the traveling direction C of the gas in the nozzle 52, the diaphragm 54 is inclined, and the gas blowing direction C 'is controlled.
[0047]
Here, the supplied gas is locally blown onto the exposure pattern 32 (see FIG. 1A) by controlling the direction of the vibration plate 54 in the direction of the exposure pattern 32 which is an ultraviolet irradiation area by the driving unit. Can be By changing the inclination of the diaphragm 54 by the driving means, gas can be blown over the entire area of the exposure pattern 32.
As described above, the exposure apparatus of the present invention may be the gas supply unit 42 including the control unit such as the diaphragm 54 that controls the gas blowing direction C ′ by the driving unit. This control means is not limited to the vibration plate 54, and the same effect as in the first embodiment can be obtained even if gas is blown over the entire area of the exposure pattern 32 by tilting and moving the nozzle 52 itself.
It is also possible to adjust the gas blowing direction C ′ while checking the removal status of the contamination.
[0048]
(Third embodiment)
Further, in the first embodiment, the example in which the ultraviolet irradiation means 41 and the gas supply means 42 are arranged in the vacuum chamber 11 has been described. In the present embodiment, however, the mask loading chamber installed adjacent to the vacuum chamber 11 is described. An example in which the ultraviolet irradiation means 41 and the gas supply means 42 are arranged in the apparatus 12 will be described.
In this case, the region from which the contamination is removed becomes the exposure mask 31. Here, the contamination of the exposure pattern 32 is removed as in the first and second embodiments.
[0049]
As shown in FIG. 3, an exposure mask 31 held by a mask holding member (not shown) disposed in the mask loading chamber 12 is irradiated with ultraviolet light from ultraviolet irradiation means 41 disposed in, for example, an upper portion of the mask loading chamber 12. To decompose the contamination. Then, a gas is blown from the gas supply means 42 disposed on, for example, the side wall of the mask loading chamber 12 into the ultraviolet irradiation region to remove the decomposed contamination.
[0050]
According to such an exposure apparatus and an exposure method, the contamination adhering to the exposure mask 31 is decomposed by irradiating the ultraviolet rays in the mask loading chamber 12 and the gas is blown by the gas supply means 42, whereby the decomposed contamination is discharged. Nations can be removed.
Further, since the inside of the mask loading chamber 12 is usually also maintained in a vacuum atmosphere, it is possible to exhaust the decomposed contamination together with the gas from the inside of the mask loading chamber 12 without re-adhering to the exposure mask 31.
Further, while exposure is performed in the vacuum chamber 11, contamination fixed to the exposure mask 31 to be used next in the mask loading chamber 12 can be removed.
[0051]
As described above, in the first to third embodiments, the example using the charged particle beam exposure apparatus used for the LEEPL method has been described. However, the present invention is not limited to this, and the exposure is performed in a vacuum atmosphere. If it is an exposure apparatus, another exposure apparatus may be used. For example, the same effect can be obtained even with an ultra-short wavelength ultraviolet exposure (Extreme Ultra Violet Lithography (EUV)) apparatus.
[0052]
【The invention's effect】
As described above, according to the first exposure apparatus of the present invention, the contamination is removed from the vacuum chamber by irradiating the region from which the contamination is to be removed with ultraviolet rays and blowing the gas onto the ultraviolet irradiation region. This can prevent re-adhesion of contamination.
Further, when the region from which the contamination is removed is an exposure mask, the removal of the contamination can be reliably performed. Therefore, by exposing the substrate using the exposure mask, the mask transferred to the substrate is removed. The position accuracy and line width accuracy of the pattern can be improved.
[0053]
Further, according to the second exposure apparatus of the present invention, it is possible to remove the contamination fixed to the exposure mask in the mask loading chamber, and to perform the exposure using the exposure mask in the vacuum chamber while performing the exposure using the exposure mask in the vacuum chamber. Thus, the contamination fixed to the exposure mask to be used next can be removed, and the re-adhesion of the contamination can be prevented.
Further, while exposure is performed in the vacuum chamber, it is possible to remove contamination adhered to the next exposure mask in the mask loading chamber.
[0054]
Further, according to the exposure method of the present invention, the substrate is irradiated with ultraviolet light in a state where the substrate is covered with an ultraviolet light shielding shutter in the vacuum chamber, so that the substrate is exposed to ultraviolet light even when the substrate is carried in the vacuum chamber. Contamination can be removed without affecting irradiation.
Therefore, when performing multiple exposures by changing the exposure position of the substrate, it is possible to frequently remove contamination between exposure steps, so that the inside of the exposure apparatus can be maintained in a cleaner state. It is possible.
[Brief description of the drawings]
FIG. 1A is a schematic configuration diagram for explaining an exposure apparatus according to a first embodiment, and FIG.
FIG. 2 is an enlarged view of a main part of a nozzle of an exposure apparatus according to a second embodiment.
FIG. 3 is a schematic configuration diagram of an exposure apparatus according to a third embodiment.
FIG. 4 is a schematic configuration diagram for explaining an exposure apparatus in a conventional technique.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 ... Vacuum chamber, 12 ... Mask loading chamber, 21 ... Exposure light source, 22 ... Substrate mounting table, 31 ... Exposure mask, 41 ... Ultraviolet supply means, 42 ... Gas supply means, 51 ... Temperature control means, 52 ... Nozzle, 53 ... gas outlet, 54 ... diaphragm, W ... substrate, e ... electron beam

Claims (9)

In a vacuum chamber, an exposure apparatus provided with an exposure light source provided in the vacuum chamber, and a substrate mounting table provided on a path of exposure light emitted from the exposure light source,
In the vacuum chamber, ultraviolet irradiation means for irradiating the region to remove the contamination with ultraviolet light,
An exposure apparatus, comprising: gas supply means for blowing gas to an ultraviolet irradiation region. 2. The exposure mask according to claim 1, wherein an exposure mask is provided on a path of the exposure light between the exposure light source and the substrate mounting table, and a region from which the contamination is removed is the exposure mask. Exposure equipment. In the vacuum chamber, an ultraviolet light shielding shutter that is movable between a position covering the substrate mounting table with respect to ultraviolet light emitted from the ultraviolet irradiation means and a position off the path of exposure light is provided. The exposure apparatus according to claim 1, wherein: The gas supply means includes a plurality of flow paths therein along a gas traveling direction, and includes a nozzle formed so that an opening width increases toward a gas outlet. Item 2. An exposure apparatus according to Item 1. 2. The exposure apparatus according to claim 1, wherein the gas supply unit includes a driving unit for controlling a blowing direction of the gas. 2. An exposure apparatus according to claim 1, wherein said gas supply means includes a temperature control means for controlling a temperature of a supplied gas. A vacuum chamber for performing exposure, and an exposure apparatus that is provided adjacent to the vacuum chamber and includes a mask loading chamber for loading an exposure mask into the vacuum chamber.
An exposure apparatus, comprising: an ultraviolet irradiation means for irradiating the exposure mask with ultraviolet light; and a gas supply means for blowing gas to an ultraviolet irradiation area in the mask loading chamber. An exposure step of exposing the substrate in a vacuum chamber;
A step of irradiating an ultraviolet ray to a region in the vacuum chamber for removing contamination while covering the substrate with an ultraviolet light shielding shutter, and having a contamination removal step of blowing gas to the ultraviolet irradiation region to remove the contamination. An exposure method comprising: 9. The exposure method according to claim 8, wherein the contamination removing step is performed in parallel when moving the exposure position of the substrate.

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