JP2003524748A5 - - Google Patents

Download PDF

Info

Publication number
JP2003524748A5
JP2003524748A5 JP2000502402A JP2000502402A JP2003524748A5 JP 2003524748 A5 JP2003524748 A5 JP 2003524748A5 JP 2000502402 A JP2000502402 A JP 2000502402A JP 2000502402 A JP2000502402 A JP 2000502402A JP 2003524748 A5 JP2003524748 A5 JP 2003524748A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000502402A
Other versions
JP4231902B2 (ja
JP2003524748A (ja
Filing date
Publication date
Priority claimed from US08/890,697 external-priority patent/US5798837A/en
Priority claimed from US09/015,839 external-priority patent/US6278519B1/en
Application filed filed Critical
Priority claimed from PCT/US1998/011562 external-priority patent/WO1999002970A1/en
Publication of JP2003524748A publication Critical patent/JP2003524748A/ja
Publication of JP2003524748A5 publication Critical patent/JP2003524748A5/ja
Application granted granted Critical
Publication of JP4231902B2 publication Critical patent/JP4231902B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2000502402A 1997-07-11 1998-06-05 半導体上の多層薄膜積層を解析する装置 Expired - Lifetime JP4231902B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US08/890,697 1997-07-11
US08/890,697 US5798837A (en) 1997-07-11 1997-07-11 Thin film optical measurement system and method with calibrating ellipsometer
US09/015,839 US6278519B1 (en) 1998-01-29 1998-01-29 Apparatus for analyzing multi-layer thin film stacks on semiconductors
US09/015,839 1998-01-29
PCT/US1998/011562 WO1999002970A1 (en) 1997-07-11 1998-06-05 An apparatus for analyzing multi-layer thin film stacks on semiconductors

Publications (3)

Publication Number Publication Date
JP2003524748A JP2003524748A (ja) 2003-08-19
JP2003524748A5 true JP2003524748A5 (ja) 2006-01-05
JP4231902B2 JP4231902B2 (ja) 2009-03-04

Family

ID=26687865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000502402A Expired - Lifetime JP4231902B2 (ja) 1997-07-11 1998-06-05 半導体上の多層薄膜積層を解析する装置

Country Status (3)

Country Link
EP (1) EP1012571A1 (ja)
JP (1) JP4231902B2 (ja)
WO (1) WO1999002970A1 (ja)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6608689B1 (en) 1998-08-31 2003-08-19 Therma-Wave, Inc. Combination thin-film stress and thickness measurement device
US6184984B1 (en) * 1999-02-09 2001-02-06 Kla-Tencor Corporation System for measuring polarimetric spectrum and other properties of a sample
US6804003B1 (en) 1999-02-09 2004-10-12 Kla-Tencor Corporation System for analyzing surface characteristics with self-calibrating capability
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6861619B1 (en) 2000-02-07 2005-03-01 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6261853B1 (en) 2000-02-07 2001-07-17 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6472238B1 (en) 2000-02-09 2002-10-29 Therma-Wave, Inc. Evaluation of etching processes in semiconductors
US6408048B2 (en) 2000-03-14 2002-06-18 Therma-Wave, Inc. Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US6429943B1 (en) * 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
WO2001084382A1 (en) 2000-05-04 2001-11-08 Kla-Tencor, Inc. Methods and systems for lithography process control
US6462817B1 (en) 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
US6829049B1 (en) 2000-05-15 2004-12-07 Therma-Wave, Inc. Small spot spectroscopic ellipsometer with refractive focusing
US6583875B1 (en) 2000-05-19 2003-06-24 Therma-Wave, Inc. Monitoring temperature and sample characteristics using a rotating compensator ellipsometer
FR2806479A1 (fr) * 2000-07-03 2001-09-21 Commissariat Energie Atomique Procede et dispositif de detection de couches minces
FR2811761B1 (fr) * 2000-07-17 2002-10-11 Production Rech S Appliquees Ellipsometre a haute resolution spatiale fonctionnant dans l'infrarouge
US6532070B1 (en) 2000-07-17 2003-03-11 Therma-Wave, Inc. Method for determining ion concentration and energy of shallow junction implants
FR2818376B1 (fr) * 2000-12-18 2003-03-28 Centre Nat Rech Scient Dispositif de visualisation bidimensionnelle ellipsometrique d'un echantillon, procede de visualisation et procede de mesure ellipsometrique avec resolution spatiale
US6515744B2 (en) 2001-02-08 2003-02-04 Therma-Wave, Inc. Small spot ellipsometer
WO2002079760A2 (en) 2001-03-30 2002-10-10 Therma-Wave, Inc. Polarimetric scatterometer for critical dimension measurements of periodic structures
US6583876B2 (en) 2001-05-24 2003-06-24 Therma-Wave, Inc. Apparatus for optical measurements of nitrogen concentration in thin films
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
US6704661B1 (en) 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6882413B2 (en) 2002-02-04 2005-04-19 Therma-Wave, Inc. Rotating head ellipsometer
US6792328B2 (en) * 2002-03-29 2004-09-14 Timbre Technologies, Inc. Metrology diffraction signal adaptation for tool-to-tool matching
US7126131B2 (en) 2003-01-16 2006-10-24 Metrosol, Inc. Broad band referencing reflectometer
US8564780B2 (en) 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US7301638B1 (en) 2004-01-31 2007-11-27 Kla Tencor, Inc. Dimensional calibration standards
US7215431B2 (en) 2004-03-04 2007-05-08 Therma-Wave, Inc. Systems and methods for immersion metrology
WO2005114148A2 (en) * 2004-05-14 2005-12-01 Kla-Tencor Technologies Corp. Systems and methods for measurement or analysis of a specimen
US7804059B2 (en) 2004-08-11 2010-09-28 Jordan Valley Semiconductors Ltd. Method and apparatus for accurate calibration of VUV reflectometer
DE102005002267B4 (de) * 2005-01-18 2017-02-09 Leica Microsystems Cms Gmbh Verfahren zum Wellenlängenkalibrieren eines optischen Messsystems
US7626712B2 (en) * 2005-07-12 2009-12-01 Sematech, Inc. Methods and systems for characterizing semiconductor materials
US7580138B2 (en) 2005-07-12 2009-08-25 Sematech, Inc. Methods and systems for characterizing semiconductor materials
US7430051B2 (en) 2005-10-12 2008-09-30 Sematech Inc. Methods for characterizing semiconductor material using optical metrology
US7567351B2 (en) * 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US20080129986A1 (en) 2006-11-30 2008-06-05 Phillip Walsh Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations
US8245161B1 (en) 2007-08-16 2012-08-14 Kla-Tencor Corporation Verification of computer simulation of photolithographic process
US20090219537A1 (en) 2008-02-28 2009-09-03 Phillip Walsh Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US8153987B2 (en) 2009-05-22 2012-04-10 Jordan Valley Semiconductors Ltd. Automated calibration methodology for VUV metrology system
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999014A (en) * 1989-05-04 1991-03-12 Therma-Wave, Inc. Method and apparatus for measuring thickness of thin films
JPH06103252B2 (ja) * 1989-05-04 1994-12-14 サーマ―ウェイブ・インク 高分解能エリプソメータ装置と方法
US5159412A (en) * 1991-03-15 1992-10-27 Therma-Wave, Inc. Optical measurement device with enhanced sensitivity
US5181080A (en) * 1991-12-23 1993-01-19 Therma-Wave, Inc. Method and apparatus for evaluating the thickness of thin films
JPH10507833A (ja) * 1994-10-21 1998-07-28 サーマ−ウェイブ・インク 分光偏光解析装置
US5608526A (en) * 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5581350A (en) * 1995-06-06 1996-12-03 Tencor Instruments Method and system for calibrating an ellipsometer

Similar Documents

Publication Publication Date Title
BE2014C048I2 (ja)
JP2001520417A5 (ja)
JP2003524748A5 (ja)
BRPI9914151B8 (ja)
JP2001513465A5 (ja)
JP2001526409A5 (ja)
JP2000087711A5 (ja)
JP2515337Z (ja)
JP2534227C (ja)
JP2600165C (ja)
JP2561215C (ja)
JP2586611C (ja)
JP2525092C (ja)
JP2584353C (ja)
JP2507142Z (ja)
JP2534463C (ja)
JP2579193C (ja)
IN184150B (ja)
JP2570630C (ja)
ECSDI980480S (ja)
JP2564879C (ja)
CN3076811S (ja)
CN3074692S (ja)
CL1998003164A1 (ja)
CN3076442S (ja)