JP2003512153A - Solid surface catalytic reactor - Google Patents

Abstract

(57) Abstract: A method and apparatus for simulating a chemical reaction on a catalyst comprises: (116) using an inverse process to electrically convert the energy analysis released from the chemical reaction. Surface. The reversible emission nucleus (102) generates electrons that are injected into the reactant at the catalyst surface (116) while exciting the chemically reacting vibrational resonance. Hot electrons created in the emitter region of the semiconductor junction (110) diffuse to the co-located collector counting area and catalyst surface (116). The catalyst cluster or film adsorbed the (116) reactants and hot electrons from the catalyst or catalyst bound during the collector surface transfer to finish the surface. The size of the catalyst collector (104) is less than the energy analysis mean free path of the hot electrons. The hot electrons then excite reactant oscillations before the substrate lattice accelerates the reaction and thermalizes. Hot electrons are generated by the same reaction on the catalyst surface. The method and apparatus are reversible using chemical reactions and may be operated as generators.

Description

Detailed Description of the Invention

BACKGROUND OF THE INVENTION In general, the present invention relates more specifically to the excited structure of a semiconductor substrate by a method and apparatus for coupling the excited structure of a reactive adsorbent material on the surface of a catalyst with an energy analysis generator.

BACKGROUND OF THE INVENTION Recent experimental and theoretical developments in surface science have shown how hot electrons cause the vibrational heating of adsorbed molecules or atoms at the catalyst surface. Energy analysis of a hot electron is defined as an electron at room temperature, with an effective temperature between the 600 and 60,000 Kelvin temperatures or many times of thermal energy. Kelvin temperature means equivalent energy of 0.05 to about 5 eV. The Kelvin temperature of 300 degrees is 0.026 eV.

Hot electrons that diffuse to the surface of the catalytic metal interact with strongly adsorbed surface chemicals,
It is also called an adsorbent, and at speed so electrons are thermalizing in the lattice of catalytic metal atoms
It was discovered that it could be faster than the process. It has also been recently discovered that the adsorbent material gains vibrational energy when interacting with hot electrons from the catalyst surface.

It has been further discovered that adsorbate vibrational energy is strong and enhances the chemical reaction kinetics, and in some cases energy analysis or chemical thermodynamics, enables activation reactions that do not occur by thermal means with activation. Hot electrons stimulate the adsorbent chemical reaction at the catalyst surface. The reverse of this process was also observed. Where surface chemistry has resulted in the production of hot electrons.

The presence of hot electrons on the surface of the catalyst is such that the surface vibrations of the adsorbent molecules on themselves or on the catalyst are in equilibrium with the physical temperature of the substrate itself, rather with the temperature of the substrate hot electrons. May cause thermal regime. This means that the vibration can be several thousand degrees while the catalyst is at ambient temperature. The hot electrons gradually excite the adsorbate from the bottom of its adsorption in a manner that favors the adjoining potential wells to attack, react or desorb the adsorbent barrier and hops.
I will do so until I do.

It is not necessary that the hot electron energy analysis or frequency exactly match that of the adsorbent. Generally, the adsorbed material excited structure is very wide. Extended many times, the mechanism is often extended through electronic excited states. That is, the adsorbed material acquires an electron, which is a transition to an excited electronic state. Within 10's of femtoseconds, it begins to move outward far from the surface and then emits an electron. Adsorption materials whose current transition supports non-electronically excited states. However, it carries the extra energy analysis given to it by the hot electrons. As a result, the adsorbed material is in a higher vibration state. A femtosecond unit lifetime for the process causes a broadband resonance feature, thus allowing an energy analysis lattice mismatch between the hot electron and the received adsorbent energy level. In effect, the substrate electrons leave the energy analysis to the vibrational modes of the adsorbent reactant. Adsorbents on the catalyst surface, such as the vibration of atoms in the vibration of reactant molecules or adsorbents. Where can this process be repeated many times in the heart of the adsorbent desorbs itself?

In literature, this is “desorption caused by (multiple) electronic term transitions”, Abbre
Called viated DIMET or Diet. This is the stimulator's process.

The process of the generator works in reverse. An adsorbent with energy analysis in one of its vibrational modes attracts and acquires cold electrons from the catalyst. Second, this causes a transition where the adsorbed material with attached electrons becomes adsorbed material gold charged in the excited electronic state. In femtoseconds, this gold in the excited electronic state corrodes and emits electrons. This puts the adsorbent reactant into less energy analysis with its kinetic energy and extra kinetic energy in the electron.
The effect is that the reactants on the surface of the catalyst were energeticly excited so that the electrons in the catalyst got their part of the energy analysis. This is a generator process.

This generator or the reverse process was observed in the laboratory. The detector in this observation used a short-circuit Schottky diode to measure the electron flux directly generated by the surface reaction. The laboratory detector measured the short-circuit diode current. (The diode means that the detector generated almost exactly zero power). However, the detector confirmed the existence of the generator mode. Both hot electrons and hot holes were observed, and with the energy analysis across the Schottky barrier in silicon, which is of the order of 0.5 eV.

Hot electrons on the surface of the catalyst were shown to accelerate the reaction. vibrationally
Experiments in which an excited Nitrogen Oxide (no) molecule interacts with the surface of copper (copper) showed a 1000-fold increase in surface reactivity. Nearly unit, reaction probabilities were observed. In that work, neither the reactant transition energy nor the surface temperature had a strong effect on the reaction probability. Check the effectiveness of using hot electrons.

In another experiment, carbon monoxide (CO) was oxidized on the surface of ruthenium. 1.5eV, 110
The femtosecond laser pulse duration created hot electrons. It was adsorbed O with CO to produce carbon dioxide in a reaction that was entirely energetic not possible without hot electrons, observing its sub-picosecond reaction. This means that when one uses heat energy alone, CO uses the desorbed desorb.

[0012] The efficiency of such hot electrons, which at the surface of the copper, conveys vibrational energy that can be adsorbed directly to the 100% of CO. 100% desorption of Nearly has been observed. The 3-digit increase in the rate observed was no but copper was also reactive with the rate being observed.

This establishes a strong two-way engine between the hot electrons and the excited adsorbent gold on the surface of the metal catalyst. The collection of observations is either adsorbed on the exciter structure of the semiconductor diode, or chemisorbed, in close proximity to the adsorbed material on the device and on the catalyst surface,
Or both physisorbed methods of binding the excited structure of the adsorbent reactants.

The semiconductor diode pumping structure is fairly simple. The conduction band, which consists of a valence band and an electron hole. Excited structures of chemically reacting adsorbent catalyst systems are dominated by themselves and the substrate by atomic and molecular vibrations. Forming energy level bands, the energy levels pair due to the electronically excited states of these gold atoms. There, the adsorbed material may carry a transient or permanent charge.

The injection tubes of these structures are mainly near the two paths or direct of hot carriers such as hot electrons or hot holes, usually through ballistic transport, or directly between the adsorbent and the semiconductor, or energy analysis. Appears by the resonance tunnel. The resonance tunnel couples the two structures through the oscillating electric field produced by the excited structures of the semiconductor and the adsorbent catalyst system. The injection tubes are greatly enhanced when there is a frequency of excitation on either side near each other.

Hot electrons are the simplest excitations at work. Current methods of producing and pouring hot electrons onto the surface of metal catalysts rely on pulsed lasers. A common method of producing these hot electrons is to illuminate the surface of the metal with a short laser pulse. Pulse width (0.2-1.5 micron wavelength) at range with 50-1000 femtosecond units and photon energy above 1eV. Photons are adsorbed and average about half of the photon energy with energy analysis and hot electron energy analysis between 0 eV and splitting the energy analysis into photon energies with hot holes. Produce electrons that are However, lasers are one of the most expensive energy stores available.

The theory of using resonating solid-state metal insulator metal junction bonds, hot electrons, has been proposed. The theoretical proposal would be resonance-assisted at the surface to cause hot electron induced femtochemical processing. Energy analysis proportional to the catalytic Fermi that is flat and related at the junction of the metal insulators is higher than what is now known to be suitable for surface resonances. No experiment using this theory is known at this time. No known reference to process reversibility is required.

Also, the use of neutral semiconductor substrates as injection mechanism into thin metallization layers with photons obtained from pulsed lasers in semiconductors as creators of hot carriers has been shown in the literature. It was proposed that this might be an order of magnitude more efficient than using metals as photon electron acceptors for stimulating gas surface catalysis. It was photons, showing it using semiconductor substrates, metallization layers, and catalytic devices to create hot electrons more efficiently and pouring them onto the catalyst surface. The critical details necessary to make process efficiency useful were not described in the manner necessary to ensure process efficiency. Schottky junctions, ohmic confluences or mostly between semiconductors and metals, such that injection tubes, either hot carriers such as hot electrons or holes, are electrically efficient, or resonant tunnels are efficient. The confluence of ohms must be tailored. The proper use of resonance tunnels and resonance assisted processes in useful equipment and methods may be valuable ingredients.

Schottky junction diodes have been used in the solution experimentally for hot electron injection. One of the co-authors of the work shows that they did not achieve the success they wanted because the surface states associated with the electrolyte cooled the electrons. A catalytic electrode Schottky junction made of n-silicon and platinum group metals was used to inject electrons into the reaction electrolyte solution. The thickness of platinum was thicker than the mean free path of the hot electrons in platinum and varied from below the mean free path several times. They had some success and also suffered severe problems of hot electron-electrolyte interactions.
Covering the surface with a liquid electrolyte smokes the effectiveness of the hot electrons. Metal oxide confluence surface levels are an unsolved problem with this approach. (Where the liquid floods the reactive surface).

Now, layers that are multiples away from the outer catalytic surface accumulate as “polaritons” on the metal-liquid interface trap hot electrons, making them a source of immediate reaction stimulators, or the generation of excitations. It is known for devices to layer an adsorbent material that renders it less useful. The effectiveness of semiconductor substrates underneath metal and catalytically reactive surfaces is a valuable element. Semiconductor diodes are a crucial element.

Implicit in all observations is the efficiency of pulsing. In the case of reaction stimulators, the duration of the pulse that produces the hot electrons is less than the time associated with electron thermalization in the lattice. In the case of the generator, a sudden burst of chemical reaction causes a flood of hot electrons on the catalyst surface. This in turn causes those hot electrons into a flood of electrons in the conduction band of the semiconductor substrate collection. A sufficiently short burst causes the number of generated electrons to exceed the short-circuit electrons that are generated by heat. As a result, the efficiency of the electrical generation is increased.

What is lacking in the public domain is to enhance resonance tunnels, enhance activation of selected energy bands, increase the probability of required energy analysis transitions, or enhance selected reaction pathways. This is a method of preparing the surface of the catalyst.

SUMMARY OF THE INVENTION The present invention is directed to a method and apparatus for coupling the excited structure of a reactive adsorbent material to the excited structure of a semiconductor substrate at the surface of a catalyst. Desirably, the injection tube is reversible. Reversible furnaces use the excitation that occurs in a semiconductor substrate to stimulate a chemical reaction with adsorbent species on the surface of a catalyst, and the reverse process to generate excitation in the substrate as a result of the reaction. Electrical and other forms of method and energy analysis manipulate reaction pathways to accelerate the reaction, guide the reaction, manipulate the form of energy analysis caused by the reaction, and reduce the temperature of semiconductors. When operated in the stimulator mode application input to the substrate, the device needed to be stimulating when it finishes the surface of the catalytic reaction; when operated in the generator mode, the device is adsorbed into an electrical catalyst. Converts the excitation energy of a system or other form of energy analysis in a semiconductor substrate; and, when operated in a stimulator generator mode, using electrical or other forms of energy analysis to manipulate the reaction At the same time, it may generate an electrical or other form of energy analysis from an adsorbent catalyst system chemical reaction energy analysis.

The electrical or other form of energy analysis is that the present invention creates and injects excitation energy such as hot carriers into the adsorbent on the catalyst surface to stimulate the adsorbent surface catalytic reaction. And, because of the reversible nature of the process, also the exact same type of device may be oriented to collect the excitation resulting from surface chemistry. Such as hot carriers in semiconductor substrates and converting them electrically or other forms of energy analysis. In an exemplary embodiment, the present invention uses semiconductor diodes that are electronically energized in a novel way to stimulate the reaction. For example, in one embodiment, the present invention as an injecting mechanism as the creator of the hot carrier has shown that pn is used to combine them with the adsorbent material in a thin metallization layer structure of the catalytic material at the catalytic surface. Use joining. The same implementation may use a semiconductor diode and the same pn junction in front and in order to collect hot carriers in generating electrical as it is therefore biased.

The present invention also includes intimate contact with the catalytic ensemble energy analysis collector, known as the catalytic collector, and also includes hot carrier emission nuclei, known as excited emission nuclei. The excited emission nucleus contains a semiconductor diode.

When the device is operated in the stimulator mode. Whether electrical or other energy analysis inputs it into the semiconductor diode cause to generate excitations such as holes or excess of electrons, resulting hot carriers, and reverberantly coupled excitation energy. , As a result, the structure of the catalytic adsorbent system, the stimulating adsorbent chemical reaction, is bound and absorbed by excitation.

When the device is operated in generator mode, the excitation energy that occurs in the catalytic adsorbent system is combined with the semiconductor band excitation. (Band excitation usually causes a forward bias in the semiconductor and can generate other useful forms of electrical or energy analysis). Semiconductor diodes are emission nuclei, diode junctions,
And includes a semiconductor base. When the diode is a Schottky diode, when the diode is a pn junction diode, the emission nucleus (intimately in contact with the catalytic collector) contains a semiconductor, or the emission nucleus contains a metal. There is. The confluence is the counting zone of contact between the emitting nuclei and the base. The emitting nuclei also include electrical contacts. When the hot carriers (semiconductor excitations) are chosen to be electrons, the base contains n-type semiconductors and the emission nuclei contain either p-type semiconductors or metals.

When the hot carrier is chosen to be a hole, the base contains a p-type semiconductor and the emission nuclei contain either an n-type semiconductor or a metal. The base also includes electrical contacts.

The catalyzing collector is placed in intimate contact with the emissive nuclei to provide the catalyst, any underlying layer,
And optional reaction accelerator moderator material. The catalytic collector elements may be exactly the same as the emission nucleus elements. The A surface of the catalyst and any reaction accelerator moderator material enters intimate contact with the reactant chemicals.

The various counting zones of an apparatus using the present invention may include various and different catalytic collectors of the energy analysis injection tube, hot carrier emitting nuclei, and various modes. Includes ballistic transport and resonant tunnels.

Further features and advantages of the present invention as well as the structure and operation of the various embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the drawings, like reference numbers,
Show elements that are the same or functionally similar.

Preferred Embodiments of the Invention An exemplary implementation of the present invention uses hot carriers as semiconductor diodes and electrons as pn junction diodes. The base is an n-type semiconductor and the emission nucleus is a p-type semiconductor. Forward biasing over pn junction diodes injects minority carrier electrons into the conduction band of p-type emission nuclei where they become minority carriers. If the distance from the confluence point to the catalytic collector is less than some times the diffusion length of the minority carriers in the p-type semiconductor, the minority carriers will diffuse, over the catalytic collector, and in reverberation, the adsorbed material. It may be associated with the excitation structure of the catalytic system. For example, and then when InSb of InGaAsSb, Ids, or some alloy is a semiconductor, the diffusion length can range from approximately 100 nanometers to several microns.

According to the present invention, the minority carrier electrons are injected or resonate above the Fermi level of the catalyzing collector in energy analysis and are combined with the catalyzing collector. This excess energy is then nearly energetic, which is almost equal to the value of the forward bias on the diode around. When the semiconductor is a pn junction diode, there may be minority carrier energy analysis within approximately a few kT of the semiconductor bandgap width energy analysis (kT = thermal energy, 0.026 eV). There may be carrier energy analysis in the order of a few kT when the semiconductor diode is a Schottky junction. There is also a forward bias energy analysis. Also, if an electron called a hot electron is grassland, for example, if the distance from the p-type semiconductor to the surface in contact with the reactant is grassland, it will rapidly become intimate with the surface of the catalyst surface and the reactant. Several times about the mean free path energy analysis of the electrons in a catalytic collector that may stain on contact.

When the catalyst is a metal such as platinum, the free-range palladium, rhodium or ruthenium, which is the average for energy analysis, ranges between 5 and 50 nanometers.
The energy resolution mean free path extends between 30 and 200 nanometers when the underlayer is copper or gold.

Emission Nuclear Semiconductor Diffusion Distance and Energy Analysis of Catalyst and Underlayer If there is a distance from the catalytic collector to the diode confluence in the mean free path length, hot electrons interacting with the reactant chemicals. The flux of is approximately the diode forward current. As specified in this place. Hot electrons strongly interact with the adsorbent.

Another aspect of the present invention uses a Schottky diode designed to have a low barrier height and also called a tunneling junction. Such a device is used to make almost ohmic junctions, and is used to make normal Schottky diodes, with very high doping typical of making electrical contacts in semiconductors. Schottky to be intermediate between medium-sized doping
Assembled by choosing the doping between the junction metal and the semiconductor.
Depletion region width doping control and therefore Schottky barrier strength. The value of doping may be chosen between corrupt or high doping and conventional or moderate doping. It depends on the application.

When the semiconductor is silicon, then the metal is any metal associated with the catalytic collector, the doping may be adjusted to an effective value of order of 0.1 eV. High doping in silicon effectively 0 between barriers of 0.5 and 1.5 eV
It usually yields a .0 eV barrier and a normal doping yield barrier. This tunneling junction Schottky diode allows the use of common semiconductor materials such as silicon. The use of such a diode is suitable for use in a generator mode in which the reaction is pulsed.

Semiconductor diodes may be injected with hot carriers, with methods and apparatus provided for either the pn junction diode or the Schottky junction embodiment of the present invention, or
Or reverberantly combined with an energy analysis almost equal to the energy analysis of the diode forward bias voltage into the adsorbed material on the surface of the carrier and the catalytic collector. With the method and apparatus provided in this invention, the energy analysis of the injected electrons may be selected by the user to steer the reaction and drive reaction in the selected mode or path. It contains reaction pathways that are inaccessible to thermal processes.

Another novel aspect of the present invention is the reversible nature of the present invention.
For example, the inverse of the process of stimulation is the resonant coupling of the collection of electrons generated in response to a catalytic collector with adsorbent material and energy analysis to a semiconductor diode. Create carriers such as conduction band electrons and valence band holes. The catalytic collector behaves like a collector of hot electrons generated by adsorbent chemical reaction energy analysis instead of a collector of hot electrons generated in hot carrier emitting nuclei. The catalytic collector couples the excitation from the adsorbent to the semiconductor to the adsorbent instead of the semiconductor.

The hot carrier emitting nuclei instead get their hot electrons from the catalytic collector. O £ from the junction of the diodes. The hot carrier emitting nuclei may generate their electrons by resonant coupling of energy analysis from the excited structure of the adsorbent catalyst system. The hot electrons probe the diode junction towards the base instead of the diode junction from the base. In doing so, the hot electrons maintain a forward bias on the diode, resulting in electrical generation. This reversible nature of the present invention allows the device to generate electricity as a direct result of a chemical reaction. This is the generator mode.

This same device may operate in the stimulator and generator mode at the same time, thus producing electricity alone in the generator mode more efficiently than it operates. It is operated like this. The stimulator device triggers and stimulates the semiconductor diode of the adsorbate reaction by electrical application or other form of energy analysis. This initiates and triggers a reaction that completes a picosecond order in a short time, eg m.

At high peak power, the resulting exploding burst broke the chemical reaction due to the parallel release of electrons. And the resulting flood of electrons may be collected, resulting in electrical generation. The resulting electrons may also stimulate more chemical reactions, causing an explosion or a similar chain reaction to an explosion. The result is a form of surface explosion. And the electrons may generate electricity much more efficiently in the semiconductor diode. The power generation efficiency of the diode is a function of peak load, and the stimulator may cause the reaction to achieve such high power.

When the device is operated in stimulator mode, the energy analysis may be collected by operating the solid state surface catalyzed furnace in generator mode, in any way involved. Includes, but energy analysis desorbs, collects sound quanta, collects sound-stimulated reactions with stimulating and collection consistency, collects heat, collects reaction products themselves, or those Unlimited collection or light emission, while collecting radiation emitted by gaining the kinetic energy of the product, or other modes by stimulation of piezo effect elements.

When the device is operated in generator mode, stimulation may be achieved in any way. Inclusion by operating a solid-state surface catalysis furnace in generator mode. But the other method of stimulation involves pulsed laser light generated by other catalysis products that stimulate the reaction and other reactions whose energy output may include hot carriers in other counting areas of the device. Not limited to stimulation by using a light flash or hot carrier.

When operating below room temperature in the system, along with the pn junction semiconductor in the present invention, the forbidden band width is about 0.05 eV depending on the room temperature heat sink operation and the forbidden band width.
A semiconductor starting from less than 0.05 eV of eV where the used eV may be 5 may be used. This does not preclude using materials with higher bandgaps. Like an insulator with a 12eV bandgap such as CaF2, or any other material with a higher bandgap. The commonly used InSb and InGaNsSb materials have a bandgap width that may be selected continuously by 0.1-1.5 eV, in particular by appropriate selection of In / Ga ratio and arsenic / stilb ratio at range. is there. Exactly the range that occurs as a result of band-hole bogusness in the range of energy analysis has associated chemical bonds with hydrocarbons. The InSb material produces 0.18 eV electrons (ideal to support reaction-stimulated V desorption). Because higher energy electrons may stimulate an undesirably large portion of desorption. In contrast to surface reactions.

The pn junction embodiment of the present invention provides a substrate whose energy level matches the excited state energy level of the adsorbent material. Is this an indication of either adsorbed material or
Greatly enhances resonant transfer from adsorbed materials. For example, the catalytic collector metal provides a resonant tunnel injection tube through plasmons. Between the adsorbent and the semiconductor substrate. The resonance tunnel injection tube effectively links the energy band structure of the substrate to the energy band structure of the adsorbed material. The ohmic, or near-ohmic, confluence between the catalytic collector and the semiconductor effectively pins the Fermi level of the catalytic collector into the valence band of the semiconductor. And above the valence band by an amount equal to the width of the semiconductor forbidden band, the conduction band of the semiconductor appears above the Fermi level of the catalytic collector, ie the same amount, by width energy analysis of the forbidden band. Bandgap energies may be matched to almost any energy level in systems with adsorbents and catalytic collectors, as bandgaps may be chosen from palate between 0.05 to 5eV. By choosing the width of the semiconductor forbidden band to match the energy level of the adsorbed material above the catalytic collector, one may effectively couple the two in the well-known and commonly used process of resonant tunneling. unknown. Resonant tunnels greatly increase the cross section for energy transfer.

This aids in steering reactions in the stimulator mode, as the selected energy levels of the adsorbent material may be resonated and driven by hot carriers coming from the semiconductor. This is useful in generator mode, as the excited oscillatory state of the adsorbent may be resonated and combined with the semiconductor. Upgrade the function of the engine. The stimulator then spreads, using a relatively small stimulator energy analysis, and in a similar manner on the surface exposed to the reactants, where the reaction explodes or catalyzes the explosion releasing hot carriers. This is useful in the stimulator generator mode, as it may trigger and initiate adsorbent material that may be present. And
Hot carriers may generate electricity at a rate faster than firing energy analysis by generating heat.

In one embodiment, the hot carrier emitting nuclei are degenerately doped or
Made by using highly doped pn junctions. In this embodiment,
Because of the high carrier density, the switching speed can approach that of the Schottky junction because the high semiconductor doping density also forms a step junction. It is similar to that of the Schottky diode. The high switching speed enhances the ability to pulse the stimulator and cause high peak power responses rhythmically. Next, the pn junction is certainly 0.05eV and 0.4eV
As low as less than, it may supply the lower energy analysis hot carriers determined by the bandgap chosen. The pn junction may provide very high energy resolution monochrome hot carriers. With energy analysis equal to the width of the semiconductor forbidden band. (Energy analysis exceeds 5 eV for known devices). The pn junction provides a much longer diffusion dimension than that of the Schottky junction. 2
Between 00 nanometers and a few microns. Enables much larger and "manufacturing-ready" semiconductor devices. The hot carrier migrates and interacts with the surface catalyst in microns. Mitigating the surface level problem, additionally and highly doped or degenerately doped semiconductor junctions may be created with almost ohmic contacts.

Another novel aspect of the present invention is the collocation of both electrically powered reaction stimulators and vice versa (reaction driven generators). The stimulus causes a high count rate of response. In turn results in high peak power which makes the energy analysis generator more efficient.

In another novel aspect, the present invention functions the device as both a stimulator and a generator. Applications for combined reaction stimuli are: 1) controlled catalytic reactions; 2) monitoring those reactions by using the electrical signal being generated; 3) a highly desirable choice despite undesirably slow reaction rates. Accelerated reaction in a catalytically active catalyst; 4) causing non-thermal steering of the reaction path; 5) stimulating in very rapid conditions to finish the surface of the chain reaction and maintain a low average power While achieving high peak power; 6) cause chemical reaction temperatures like those of hot carriers in the catalyst which may be far above the physical temperature of the catalyst: 7)
Unwanted chemical by-products that may accumulate, using one type of stimulator to stimulate, in stimulator generator mode, a device that makes electrical and another, for example, increasing by 8. (Self-cleaning equipment to get rid of) type to initiate a reaction avalanche, so the chemical reaction creates their own hot carriers. The hot carriers diffuse in the opposite direction, causing the device to be a generator.

Arsenic described hereinabove and the present invention was directed to various phases of the method, and using electrical energy input o to stimulate chemical reactions and manipulate devices in the process of upside down catalysis. The surface and its product electrical energy were selected.

For example, the present invention is directed to a method, an apparatus for making it an apparatus for generating hot carriers, especially hot electrons, for transporting them to the reactant adsorbents and those at the catalyst surface. Will bind such adsorbents to obtain an effective vibrational temperature above the temperature of the catalytic surface. Vibration energy and temperature are used interchangeably. Energy analysis is a product of Boltzman constant and absolute temperature. Such an effective oscillatory temperature in turn accelerates the reaction rate of the catalyst. Atomic and
It is observed that the excited vibrational levels of the adsorbent of the molecule (both surface to adsorbent and to the internal catalyst) are reacting in the ground state many orders of magnitude more than the adsorbent. The method and apparatus of the present invention increase the adsorbate vibration energy or temperature by using electrical stimulation without significantly increasing the substrate thermal energy or temperature.

In another aspect, the present invention is directed to a method and apparatus for reversing the process described above, wherein the excitation energy, the electron, generated in the chemical reaction described here above is used. Or at what point the holes are transformed was combined in the semiconductor substrate and then in the electrical.

Accordingly, one aspect of the present invention uses electrical to create energetic carriers in hot carrier emitting nuclei, especially hot electrons, to efficiently pour those carriers into a catalyzed collector. As directed to reaction stimulator methods and devices. Desirably, the catalyst or substrate temperature need not be raised during the reaction stimulus.

In another aspect, the present invention is directed to a method and apparatus for reaction stimulators--claiming a catalytic surface, especially hot electrons, and a diode biased forward through an emission nucleus-based junction. A generator that causes energetic carriers and, as a result, collects energetic carriers that are efficiently generated in the reaction when generating electricity.

In another aspect, the present invention is directed to reaction stimulators that inject the range of energy analysis needed to support the type of surface chemistry that is selectively required for hot carriers or hot electrons. To be Desirably, the reaction stimulator is simple in design,
No bumps in structure and no waste to manufacture.

In another aspect, as the present invention stimulates the reaction, ie, from the chemisorbent reaction to where hot carrier diffusion may continue in either direction at some point to hot carrier release nuclei. From the carrier-releasing nucleus to the reversible reaction stimulator or chemisorbent. The emission nucleus generates electricity. The adsorbing material is electrical.

In yet another aspect, the present invention uses the heat of vaporization of a reactant as a cooling medium to operate a semiconductor junction.

Accordingly, a method of stimulating a reaction uses electrical energy that is biased to a semiconductor diode and transported through a catalytic collector to a chemisorptive material, thus stimulating the adsorbent material to react. Includes doing. There, hot carriers such as hot electrons are created with the potential across the electrical contact of the semiconductor diode diffusing so far from the diode confluence.

Thus, the method of generating electricity creates, transports, or bonds the hot carriers by using the chemisorbent reaction energy at the junction with the semiconductor diode and the hot carriers at the catalyzing collector. Includes doing. It is biased, which causes the diode to move forward while generating electricity.

The method also includes utilizing the process of carrier diffusion to transport energetic carriers, such as hot electrons, from the junction and diode junctions to the catalytic collector. The method also collects hot carriers supplied by the transporting emission nuclei,
Or using a catalytic collector to bind them to the chemisorbent material on the catalyst surface, or any reaction accelerator moderator material, or
Or vice versa, it is treated to collect hot carriers or any reaction accelerator moderator materials and transports generated by chemisorbents on the catalyst or to combine them with the emission nuclei.

The method also includes quantum dots, a quantum telescope, from a material that includes a catalytic collector,
Includes forming metal clusters, layers, atomically constant monolayers, surface structures, crystalline layers or one, two or three dimensional quantum confinement structures such as quantum fences and quantum wells. The method uses or involves such layers and quantum confinement structures that tailor electron densities with hot carriers and, in turn, vacancy states in the material, which give rise to opportunities for construction. Such a condition does not include the depletion of the number of electrons available for decay of the vibrational energy of the adsorbent substrate system at the value of the transition energy as that of the bandgap of the substrate.

This invention includes a surface catalyzed furnace with bespoke electron density in state and bespoke energy analysis decay modes. For example, the electron density of the state may be modified by forming an ordered, electronreflective, or hole-reflecting structure of material on the surface of the catalytic collector exposed to the reactants. .

The method of the present invention catalyzes to increase the probability of forming electron-hole pairs to enhance the required energy distribution and resonance tunnel stimulation while binding the oscillatory states of the adsorbent substrate system. Includes tailoring the state carrier density near the Fermi surface of the collector. Such a tailor may enter and tailor the hot electronic Fabry-Perot mode of a thin film electron interferometer.

In addition, the electron density of the state depends on the comb-shaped built-in electron interferometer structure, and other steps, channels, rangefinders, fences, pyramids, polygons, valleys, walls, periodic reflecting mirrors,
And may be modified by using catalysts and other substrate materials to form structures to cause multipath reflection of electrons, including chaotic mirrors.

The method also relates to the use combinations of different catalytic materials, the materials of any reaction accelerator moderators as part of the catalytic collector, and other geometries of any geometry to form such materials. It may include pillars, islands, clusters, interdigitated and random structures, and stripes.

The method may also include selecting an optimal accelerator moderator material that slows or delays the reaction of the catalyst and the adsorbent material. As the use of stimulation mode allows better control of the reaction rate. Such material may be part of the catalyst itself adjacent to the catalyst and may be a consumable carried by the fuel--oxidant mixture.

The method also selects the material of the catalyst in order to increase the probability that hot electrons will interact with the adsorbed material rather than the acoustic quantum vibrations of the catalyst at a Debye frequency lower than that of the required hot carrier energy analysis. May be included. The ability or limit of the basic shape to cut less than a micron is determined below by the thickness according to the dimensions of the semiconductor and the elements that are only totally limited by the components of the foam that allow the constituent dimensions to be included. The shape of the suitable contour of the device path, specified by the user. This allows device contouring to almost any macroscopic physical condition.

The method also includes using pulsed stimulation. The pulsing action stimulates the reaction to occur with high peak power and short duration. This has been perfected to allow a device in which the response remains relatively cool in zero stimuli, longer breaks after which it responds to high temperatures and highs during pulsed stimuli of relatively short duration. Allow to happen at peak power. Pulsing allows the reaction to take place before the thermal process takes place. Pulsing allows the means of movement, ie the complete depletion of the reactants through the gas for a shorter time than they can be replenished by the reaction gas mixture.

The method also includes using any underlying material as part of the catalytic collector. The lower layer may be a metal, such as copper, gold, silver or aluminum, and is. Choose to be compatible with obtaining the necessary assets in the semiconductor components of the hot carrier emitting core. One required property is an ohmic or near-ohmic confluence. The underlayer may be used in hot carrier emitting nuclei as an electrical connection and also in a catalytic collector as an electrical connection. The underlayer is used as a substrate to catalyze the structure of the material deposited as part of the catalytic collector, to more underlayers or to create a particular geometry and crystallographic orientation, or to match the lattice constant of the material deposited underlayer. It may be.

The method also includes limiting the thickness of the underlayer to no more than the energy analysis mean free path of some hot carriers selected for the device. But when it is a base metal, the include is. It may come from some underlayer being sufficient between one monolayer, (approximately 0.3, nanometer,), 50 nanometer, platinum, nickel, palladium, rhodium, rhenium, copper, gold. ,
It is not limited to silver or aluminum.

The method encloses all or selected components of the device in an optical cavity tuned to an energy analysis associated with the excited structure of a semiconductor, a catalytic collector adsorbent or some combination of these elements. Is included.

The device for stimulating a reaction or generating electricity in accordance with the present invention includes a hot carrier emitting nucleus and a catalytic collector. The hot carrier emission nuclei belonging to this device include semiconductor diodes. A semiconductor diode includes a semiconductor base, a diode junction called an emission nucleus-based junction, and an emission nucleus. The emission core contains a semiconductor or metal as a diode element. The device may also include a first electrical connection to the emitting nucleus and a second electrical connection to the base.

The device for stimulating a reaction or generating electricity in accordance with the present invention has the required energy levels of either the semiconductor or system the excitation is structured including the catalytic collector and the chemisorbent material. It may include any optical cavities that are transitionally adjusted. Such cavities may include and are not limited to metal and dielectric microcavities. Photonic bandgap properties, fabrey-perot cavities, woven mirrors, distributed Bragg reflectors, single and combined semiconductor microcavities, external cavities with wavelength filters or periodic structures exhibiting large dispersion.
Quantum dot vertical cavity. Micro disk cavity. Quantum dot microdisk cavity
Laser waveguides, dielectric slab waveguides, cavities with or without cladding associated electromagnetic surface waves, also called surface plasmons. Metal-semiconductor interface that does not require any additional confinement layers, chaotic oscillators, optical resonators with deformed cross-sections, resonator designs that incorporate chaotic ray motion, and symmetric vibration with whispering gallery modes. In one embodiment, the electron is in a hot carrier, the diode is a pn junction type emission nucleus made from InSb with an n-type base and p, and the catalytic collector is found, Or co-located with the proximity of emitting nuclear electrical contacts. The catalytic ensemble contains palladium and the catalytic metal such as platinum deposited on the surface structure and clusters or any alloy of quantum narrow structure. The distance from the counting region of the catalyst exposed to the adsorbent to the semiconductor is, for example, the free path that is predominantly the average of the energy analysis in platinum, since the composition or geometry of the catalyst is such. Less than 3 times. (Twice that means the free path is about 20 nm). The direct contact of the emission nucleus with the semiconductor is the catalytic metal. It is degenerately doped with its semiconductor to form an ohmic or tunneling junction. In this embodiment, the confluence point is formed at pn, which is three times the distance from the catalytic collector to the diffusion, and to what diffusion distance is the distance away from the conduction band of p-type InSb for electrons. Could be a minimum of 200 pressure gauges? The device may be operated in a stimulator mode, a generator mode or a stimulator generator mode, and where hot electrons may be created by chemisorbent material reactions or by electrical energy input to a semiconductor diode.

The reversible solid-state surface catalysed excitation transfer reactor of the present invention combines the excitation band structure of the semiconductor substrate with the excitation band structure of the adsorbent catalyst system. The device may be designed to activate the gaseous reactants. In generator mode, the energy analysis of the excitations associated with the chemical reaction of the adsorbent with the surface and the surface of the catalyzing collector is converted into excitations such as hot carriers and electromagnetic fields.

Energy analysis of the excitations associated with the reaction of the adsorbed material shows that the excited reactant molecular vibrations complete the surface of the vibrations with the molecules atomic surface vibrations, adsorption reactions, chemical reactions, and excited electronic states. Contains. Transformed excitations such as hot carriers and electromagnetic fields may be transported to the excited emission nuclei where a semiconductor or emission nuclear excitation is created and converted into a useful form of energy analysis. Emission nuclear excitation includes minority carriers, hot carriers, carrier diffusion, injection tube electric field, excitons, and plasmons in semiconductors.

Also in the generator mode, a pulse of excitation energy (molecular surface vibrations, atomic surface vibrations, atoms) due to the chemical reaction of the adsorbent occurring with the associated surface and the surface of the catalytic collector that excites the reactant molecular vibrations. Surface vibrations, adsorption reactions, chemical reactions, and excited electronic states) may be transformed into excitations such as hot carriers and electromagnetic fields.
Semiconductor minority carriers, hot carriers, carrier diffusion, injection tube electric field, excitons,
And excitations such as plasmons are created and transported where they may be transformed into useful forms of energy analysis, either to the emission nucleus or to the excitation emission nucleus.

In one embodiment, the stimulated emission nucleus and the catalytic collector may share a common constituent to both of them.

FIG. 1 illustrates a general schematic cross-section of a solid state surface catalyzed furnace system. Formed with a base 108, the device 100 includes an emission nucleus 102 and a catalytic collector 104.
To include. The pn junction 110 is formed between the emission nucleus 102 and the base 108. That 104 is an emission nuclear electrical connection 114 and a catalyzing collector extended as shown in FIG. Also, the base electrical connection 112 is placed in contact with the base 108 as shown in FIG. The reactants and products interact with the catalyst surface at 116 catalyzing collectors 104. Reactants may include, but are not limited to the hydrocarbon chain, ethane, ethylene, propane, propylene, propane, butane, butene, octane, its nuclear isomers.

In the stimulated mode, the device 100 also utilizes electrical energy to create energetic carriers called hot carriers or hot electrons. The hot carriers diffuse to the catalytic collector 104 and interact strongly with the reactants at the catalyst surface 116, accelerating the reaction to produce reaction products. The stimulating reaction may cause a chain reaction or equivalent of surface explosion. Also, the stimulating reaction may cause an autocatalyzed chain reaction.

In generational mode, hot electrons generated on the catalyst surface 116, for example, in a chemical reaction that diffuses a pn junction across the confluence 110, cause a forward bias across the confluence, Generates electrical energy.

In the exemplary embodiment, a pn junction is used with a p-type emission nucleus and an n-type base to create hot electrons. Therefore, the confluence 110 may be radically biased. The confluence point may be a pn junction with a p-type emission nucleus and an n-type base, as opposed to hot holes, when the hot carriers are hot electrons. Alternatively, the confluence point may be a Schottky junction with a metal emitting nucleus and an n-type semiconductor base.

In the stimulus mode, the radical, biased confluence 110 creates hot electrons. When the base contact 112 is a biased negative and the emission nucleus contact 114 is biased, for example,
Aggressive, hot electrons are created at the confluence 110. The hot electrons diffuse to the catalyst surface 116 through the emitting nuclei 102 and ballistically transport through the catalytic collector 104.
y

In generator mode, hot electrons originating at the catalyst surface 116 may also diffuse to the confluence 110, ballistically transporting through the catalytic collector 104. Causes the emission nucleus based junction diode 110 to become forward biased.

For example, as hot electrons transport and diffuse from the catalyst to the confluence 110 from the surface 116, the base contact 112 becomes a biased negative and the emission nucleus contact 114 becomes a biased positive number. And, the diode in the present invention becomes an electron source instead of a sink.

These hot electrons migrate or diffuse from the catalyst surface or catalyst surface or emission nuclei 102 and from the catalyst surface 116. Therefore, in the exemplary embodiment, the diode confluence point 110
The distance from to the adsorbed material on the surface of the catalyst 116 is formed to be less than the distance that the energy analysis of these carriers recedes. When evaluated from the emission nucleus-based junction 110 to the adsorbed material on the catalyst Surface 116 on the path, this distance is generally less than several times about the energetic mean free path of such energetic hot electrons.

Using the process described here above, a reactant adsorbing a surface on a catalyst whose excitation accelerates the reaction and is excited by the hot electrons that form the product vibrationa
Become lly. Using these means, hot electrons created by the reactants adsorbed in the collector-catalyst ensemble create the possibility of forward-biasing diodes.

In an exemplary embodiment of the present invention, the catalytic collector 104 encases the catalytic material in layers, clusters, atomically constant monolayers, or surface structures. Desirably, the layer or cluster is catalytic to reduce the thickness dimension several times less than the total energy analysis mean free path of hot electrons. Layer or cluster is diode confluence 1
The near formation is sufficient for the hot electrons to 10 to be able to diffuse directly between the confluence point 110 and the catalyst surface 116.

The total energy analysis mean free path of hot electrons in catalysts such as platinum and palladium is on the order of 20 nanometers, much shorter than gold, silver or copper.

Therefore, according to an exemplary embodiment, catalyst clusters or layers are made with less clusters, layer thicknesses or thickness dimensions than this smaller value. For example, the electron energy lifetime is of the order 15 fs, measured in Tantalum, a representative transition metal electronically similar to the platinum group. The calculated lifetime of palladium based on Fermi's inverse square scaling would be 600 fs at 0.3 eV, giving a total energy analytical mean free path of 840 nanometers. Instead of this optimistically large value, life is estimated to be poor because it was measured in tantalum. This is an order 21
The total energy analysis mean free path of nanometer platinum or palladium is given.

In this embodiment, the catalyst size is grassier than the measured energy analysis mean free path of hot electrons. These arguments regarding the total thickness of the catalyst, and the underlayer that is the electrical connection to the catalyst, are not so long that the path taken by hot carriers through such catalyst and underlayer is so long that it significantly reduces hot carrier energy analysis. Simply assert that any size that meets is acceptable.

Desirably, the methods provided in the present invention generate electrons that have an energy analysis in range that supports the reaction upon desorption. These energy analyzes are in the range of 0.05 to 0.4 eV. Similarly, the method of collecting the electrons generated by the chemical reaction on the catalyst finishes the surface of the prepaid electrons, which has energy analysis in the range of 0.05 to 0.4 eV. Therefore, semiconductor materials with a bandgap width less than approximately 0.4 eV may be used. Examples of such semiconductor materials include indium antimonide (InSb) or indium arsenide (InAs) at 0.15 eV forbidden band width and 0.35 eV, respectively. Energetic electrons produced in these semiconductors have an energy analysis almost equal to the width of the forbidden band in p-type semiconductor emission nuclei. The hot electrons diffusing back into the n-type base generate a potential approaching the width energy analysis of the forbidden band. In general, bandgap width values are selected based on the nature of the reactants and energy analysis associated with their surface activity.

In an exemplary embodiment, the catalyst cluster may further include an activator. Anti-activators, speed reducers or accelerators won in their proximity. Like oxides and other materials. As shown in the cross-sectional view of FIG. Adjacent to FIG. 2 illustrates a cross-sectional view 200 of a catalytic collector including a reaction accelerator moderator material 206 and co-founded with a catalytic material 202. As shown, the hot electron catalyzed collector encases the catalyst material 202, an optional thin electrode underlayer 204, and a reaction accelerator moderator material 206, such as an oxide. For example, the catalyst itself, oxides of cerium, titanium or aluminum may form between catalyst islands or layers. Desirably, the overall dimensions of the catalyst and thin electrode underlayer 204 are several times more negative with respect to the total energy resolved mean free path of hot electrons. Numbers 3, 4, and 5 illustrate several different embodiments of the catalytic collector used in the solid-state surface catalysis furnace of the present invention. '○ Also live all in a thin electrode underlayer that forms the electrical connection for hot carrier emission nuclei (Figure 5), in the figure the catalytic collector is material to the thin electrode underlayer (Figure 4) It may contain a catalyst-on catalyst, such as an island that lives directly above a semiconductor (Figure 3) (also electrical connections for hot carrier emission nuclei, or surrounding the catalyst). Or the material of the reaction accelerator moderator adjacent to it forms the catalyst).

The catalyst may include materials such as An, silver, platinum, Pd, copper, In, iron, nickel, Sn, and Missouri. Catalysts are metal clusters, pillars, islands, layers, crystal layers,
It may be formed into structures that include atomically constant monolayers, inter-finger, and random structures, stripes, or surface structures. Also, the catalyst may be formed in 1, 2 such as quantum dots, quantum telescopes, quantum fences, and quantum wells, or may be a three-dimensional quantum confinement structure.

FIG. 3 shows a cross-sectional view 300 of a solid-state surface catalyzed furnace system in which the carriers include hot carrier emitting nuclei where the carriers are electron and catalytic collectors. The catalytic collector ensemble preferably includes formed catalytic islands 302 such that the distance to the semiconductor does not free 304 hot electron paths in the catalyst 302 than three times the total energy analysis implies. Desirably, the catalytic island 302 is highly doped p
Glued to. P doped, p + counting region of semiconductor 304. In one embodiment,
The catalytic material 302 is spread over the surface of the semiconductor. In another embodiment, the catalyst is formed with a mine layer whose surface structure is atomistically constant.

The heat, for example, electrons and carrier emission nuclei are n-type semiconductor 308, p due to the negative polarity 306.
A semiconductor diode formed in contact with an n-type semiconductor 312, n-type semiconductors 308 and 312, a p-doped p + semiconductor 304 of a p-doped p-type semiconductor or a highly formed pn junction 310, and an anode 314. Contains.

FIG. 4 illustrates a cross-sectional view 400 of a solid state surface catalysis furnace apparatus with a thin electrode 402 forming a substrate and a catalytic structure. In this embodiment, the catalytic collector encloses the thin electrode sublayer 402, the catalytic structure 404, and the busbar electrical connection 406 in electrical contact with the thin electrode sublayer 402. Hot electron emission nuclei have negative electrical connections 408, n-type semiconductors 410, p
An n-junction 412, 414, a p-doped p + semiconductor 416 of a semiconductor diode, in which p is heavily formed by a p-type semiconductor doped, and a thin electrode underlayer 402. As shown, the thin electrode underlayer 402 may be common to the hot electron emitting nuclei and the catalytic collector. The thin electrode underlayer 402 may be a thin anode. Desirably, the thin electrode underlayer 402 is selected from those materials that have ohmic or near-ohmic junctions to semiconductors.

The thin electrode underlayer 402 also presents an ohmic or near-ohmic junction with the semiconductor 416 while providing a path for hot electrons to enter or leave the catalyst 404. Provided in the invention form. With some choice of catalytic metal and semiconductor combination, the ohmic character of the confluence between the semiconductor 416 and the catalyst 404 is instead
May form a Schottky junction. In the case where a Schottky junction is formed, in a metal layer, ie the thin electrode underlayer 402 is actually used as a means to form an ohmic junction or as a tunneling Schottky junction. The confluence may be mostly ohmic. The catalyst cluster or layer 404 is then placed on the thin electrode base metal 402. In the exemplary embodiment, the thickness of the electrode underlayer 402 is chosen not to go much farther than the energetic mean free path of the hot electrons.

For 0.3 eV electrons in commonly used contact metals such as silver (“Ag series”), gold (“gold”), and copper (“copper”), the electron energy lifetime is 200 Over femtoseconds, and electronic speed is second order, 1.4e6 meters / of. The resulting energy analysis mean free path is therefore of the order 280 nanometers. This allows the underlying electrical contact to the semiconductor to be an order of magnitude thicker than the catalytic collector, increasing manufacturability. Thin, 1-5, An, Ag-based, and nanometer (“nm”) layers of copper conductors are regularly made on top of semiconductors. Allows thin layers to form ohmic or near-ohmic contacts in semiconductors. This thin layer (eg, thin electrode 402) ensures that the Fermi level of the catalyst and the Fermi level of the p-type semiconductor emission nuclei are the same or substantially the same. In this embodiment, a 1-20 nm thin layer of a metal such as An, silver or copper may be used as the electrode 402 or substrate for the catalytic ensemble. It should be further appreciated that the present invention does not limit the choice of contact metal used to form the electrode to An, silver or copper, as other metals, alloys or metalloids are at least semiconductors. It may be chosen to form an almost ohmic confluence.

In embodiments where the hot electron emitting nuclei include highly doped semiconductors, the material used for thin electrode 402 may be selected, for example, as shown at 304 in FIG. 3 and 416 in FIG. As such, the junction between the electrode 402 and the highly doped semiconductor 416 forms an at least nearly ohmic junction. Desirably,
The confluence formed is an ohmic confluence. Since the semiconductor addition is chosen sufficiently to form an ohmic or near-ohmic junction, any Schottky barrier dimension or thickness formed by this junction is high and small enough,
It means that the electron tunnel effect controls the current flow. Therefore, p-type semiconductors may be heavily or degenerately doped almost in the counting region of contact with metals. Dopant concentration is approximately le16 per cubic centimeter
Above, such heavy doping occurs. FIG. 3 shows this highly doped counting region 304 near both the emission nuclear electrical connection 314 and the catalyst cluster 202. Figure 4
Shows this heavily doped counting region 416 in contact with the thin electrode underlayer 402.

As an example, the 2e19 preferred doping per cc donor of InSb or InAs is considered to be such heavily doped. Degradative doping to 2e20 per cc semiconductor and silver, or copper as a thin metal contact to bond a suitable metal to the semiconductor that can make an almost ohmic electrical connection such as An. Or, almost any metal may form such an almost ohmic junction, because the importance of the junction under heavy or degenerate doping is custom.
The confluence prevails at this size, tunneling 1, nanometers, so much, and across. The confluence of this type is that the order of emission nuclei exceeds 1 micron3 than nanometers and the length of electron diffusion and the unique p
The n-junction is usually important. Dimensions may be limited by Auger recombination. Therefore, since a thickness of .1 micron can easily configure the confluence point between the emission core of the present invention and the catalyzing collector element, and larger dimensions are practically achieved at random. .

The thin electrode is bonded to the surface of the p-type semiconductor. The catalyst cluster or layer is placed with the thin electrode, preferably close to the pn junction. "Close" is defined to be "a distance within the minority carrier diffusion dimension of the emitting nuclear semiconductor". This dimension is more than 0.1 micron, usually ordered. Calculated electron diffusion distances for p-type InSb doped 2e20 per cc are 7 microns and 5.5 microns I
It is for nAs orders. However, the observed Auger lifetime of 1 picosecond indicates that the diffusion length is on the order of 1 micron. Arsenic has been appreciated by those skilled in the art and has this dimension well within the current state of the art manufacturing technology. Thus, the catalytic metals 302 and 404 or the thin metal contact underlayer 402 may serve both as a positive electrical connection for the catalytic collector and the emissive nuclei. It also reduces the cost and complexity of molding.

FIG. 5 illustrates a solid state surface catalyzed furnace apparatus similar to that of FIG. 4 with reaction promoter moderator material 502 surrounding or adjacent catalyst structure 404.
A cross-section is shown of the 500 illustrated. Arsenic as described with respect to FIG. 2, in the exemplary embodiment, the catalyst clusters may further include chemical surface activators, accelerators or moderators placed in their proximity. Like oxides and other materials. As shown, the catalytic collector contains a catalytic structure 404, such as an oxide, or an optional thin electrode underlayer 402, and a catalytic accelerator or moderator 502. For example,
The catalyst itself, cerium oxide, titanium or aluminum oxide may form between the catalyst islands or layers. Desirably, the distance hot electrons must travel through the catalyst 404 and the thin electrode underlayer 402 is several times less than the total energy analysis mean free path.

FIG. 6 shows a cross-sectional view 600 of a solid-state surface catalysis furnace apparatus that includes a single metal element 605 that is an electrical connection to the lower layers of the emissive core, the catalytic collector, and a Schottky diode. Forming a metal element.

Shown in FIG. 6 is a solid state surface catalyzed furnace system using Schottky diodes. The reactants are catalytic and collectors 605, 606,
And 607 are absorbed. A Schottky diode is formed between the thin metal underlayers 605, and the much more doped semiconductor 604, shown as n-type for illustration, is a hot electron for hot carriers and a less doped semiconductor counting region 601, And apply a thicker negative electrical connection 606. The bus bar 602 provides an electrical connection for the passage of current, a positive, thin electrode 605. During operation, the diode is forward biased and pulsed, ie, electrode 606 is negative pulsed with respect to anode 605. It consumes power. This is the catalytic ensemble 607
Triggers a surface reaction to form a product. The extra reaction energy may travel through structure 607 and element 605 with a thin catalyst, overcoming the possibility of a Schottky barrier and causing a burst of hot electrons entering diode counting regions 601 and 604. Forward biased to diodes and manufacturing power.

The reversible nature of this implementation is shown for illustration. The characteristic of the reaction stimulus of the same device may be its principle function. Electricity generation characteristics may be a function in principle.

FIG. 7 illustrates an electron energy level diagram that states that 700 of solid state devices will finish the surface of a catalysis furnace apparatus suitable for the case where hot carriers are hot electrons. And these ones of the elements include adsorbent material 702, catalyst 704, anode or electrical connection 718. Electrode confluence. Highly doped semiconductor in collector-emitter region 706. p-doped semiconductor counting region 708, pn junction counting region 710, n doped 712, heavily n doped 714 counting region.

In stimulated mode, forward bias 716 drives electrons from n + counting region 714 to where they are majority carriers. to pn junction 710. In the semiconductor p-type counting zone 708 where they are the minority carriers into the catalyst 704, and to the catalyst surface where they interact with the adsorbent material 706. The hot electrons excite the states that stimulate the reaction in the adsorbed material.

In generational mode, the energy analysis decay path in the excited state of the adsorbed material creates hot electrons on the catalyst surface; and the hot electrons p the confluence point 710 where the internal electric field of the semiconductor pushes them into the n + counting region 714. Travel to the semiconductor-type semiconductor counting zone with a catalyst and then p-
Continue to n. Create a forward bias. (It becomes the source of electricity).

In this and all other embodiments, the effectiveness of the stimulator, generator, and furnace may be greatly enhanced by feeding the reactants into the gas phase. In this case, the adsorbed material on the catalyst surface interacts with the hot carrier. When the liquid covers the catalyst, multiple layers of adsorbent material absorb the hot electrons, reducing their effectiveness. Therefore, also novelty points of the present invention include the use of forward biasing devices for reactive stimulation or the purpose of electrical generation.

While the invention has been particularly shown and described with respect to its preferred embodiments, it will be apparent to those skilled in the art that other changes in form and detail may be made therein without departing from the spirit and scope of the invention. It will be understood that it may be. For example, those of ordinary skill in the art will appreciate that inventive features may sometimes be used to advantage without a corresponding use of other features shown here or described above. Similarly, several features may be combined in equivalents to the scope of the present invention to achieve the desired result.

[Brief description of drawings]

Which present intention has illustrated the preferred embodiment of the present invention merely as an example with reference to the accompanying drawings in:

FIG. 1 shows a general schematic cross-section of a solid-state surface catalyzed furnace apparatus of the present invention in one embodiment;

[Fig. 2]   1 illustrates a cross-sectional view of a catalytic collector in one embodiment of the present invention;

FIG. 3 shows a cross-sectional view of a reaction stimulator device in which a catalytic cluster forms a catalytic collector;

FIG. 4: Solid-state surface catalysis in which thin electrodes form the substrate for the catalytic clusters as part of the catalytic collector and also make electrical connections for the hot carrier emission nuclei. Shows a sectional view of the furnace device;

FIG. 5 illustrates a cross-sectional view of a solid state surface catalyzed furnace around the reaction accelerator moderator material or adjacent to the catalytic metal;

FIG. 6 is a cross-sectional view of a solid-state surface catalysis furnace having a single metal element that is simultaneously electrically connected to the emission nucleus, illustrating the catalytic collector and the lower layer that forms the metal element of the Schottky diode. Do; and

FIG. 7 shows an electron energy level diagram for a solid state surface catalyzed furnace. Illustrates the counting range from the n + n type base to the adsorbent.

[Procedure amendment]

[Submission date] August 30, 2002 (2002.30)

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Contents of correction]

Title of the invention Solid surface catalytic reactor

[Claims]

Detailed Description of the Invention

FIELD OF THE INVENTION The present invention relates generally to energy generators, and more particularly to a method and apparatus for coupling the excitation structure of a semiconductor substrate to the excitation structure of a reactive adsorbate on the surface of a catalyst. Regarding

2. Description of the Related Art Recent experimental and theoretical developments in surface science have revealed how hot electrons cause the vibrational heat generation of molecules or atoms adsorbed on the catalyst surface. It was The energy of hot electrons is 600 degrees Kelvin and 60,00
Defined as an electron with an effective temperature between 0 degrees Kelvin, which is 0.05 eV
And the equivalent energy between about 5 eV, or many times that of thermal energy at room temperature. 300 degrees Kelvin is 0.026 eV.

Hot electrons that diffuse to the surface of a catalytic metal interact strongly with the adsorbed surface chemicals (also called adsorbates) and also at a faster rate than the process by which electrons thermally equilibrate with the lattice of catalytic metal atoms. It has been discovered that this can be done. Also,
This has been recently discovered, but the adsorbate gains vibrational energy when interacting with hot electrons from the catalyst surface. Also, this has been further discovered that the vibrational energy of adsorbates strongly increases the rate of chemical reactions, and in some cases, by thermal means, due to included activation energy or chemical thermodynamics. Enables reactions that do not occur. Hot electrons stimulate the chemical reactions of adsorbates on the surface of the catalyst. The reverse of this process has also been observed, where the result of surface chemistry is the production of hot electrons.

The presence of hot electrons on the surface of the catalyst means that the surface vibrations of the adsorbate molecules (either surface vibrations on themselves or on the catalyst) are not the physical temperature of the substrate itself but the substrate itself. A pseudo-thermal regime can be created that is in equilibrium with the temperature of hot electrons. This means that the vibration can be thousands of degrees even though the catalyst is at ambient temperature. Hot electrons may even excite the adsorbate stepwise from the bottom of the adsorption well until it jumps over the adsorption barrier to the next potential well and reacts or desorbs.

The energy or frequency of hot electrons need not exactly match that of the adsorbate. The excited structure of an adsorbate is generally very wide and spans multiple frequencies, the mechanism of which is often due to the excited state of the electron. That is, when the adsorbate acquires an electron, it transitions to the excited electronic state. Within tens of femtoseconds, it begins to move away from the surface and then releases the electron. The adsorbate now transitions back to the non-electron excited state. However, it
It retains the extra energy given to it by the hot electrons. As a result, the adsorbate is in a higher vibrational state. The tens of femtosecond lifetimes of the process produce broadband resonant features, thus allowing an energy mismatch between the hot electrons and the energy level of the adsorbate it receives. The electrons of the substrate actually contribute energy to the vibration modes of the adsorbate reactant, such as the vibration of atoms within the adsorbate reactant molecule or in the vibration of the adsorbate relative to the catalyst surface. This process can be repeated itself many times, up to the point where the adsorbate desorbs. In the literature, this is "Desorption Induced b
y (Multiple) Electronic Transitions <(Desorption induced by (Multiple) Electronic Transitions>) (abbreviated as DIMET or DIET). This is the stimulator process.

The operation of the generator process is the opposite. An adsorbate with energy in one of its vibrational modes attracts and acquires cold electrons from the catalyst. This causes a transition where the adsorbate with attached electrons then becomes the charged adsorbate species in the excited electronic state. Within femtoseconds,
This species in the excited electronic state decays and ejects electrons. As a result, the adsorbate reactant will be in a state of less energy in its vibrational mode and the electrons will be in an excess of kinetic energy. That is, energetically excited reactants on the surface of the catalyst result in giving a portion of that energy to the electrons within the catalyst. This is the generator process.

This generator or vice versa has been observed in the laboratory. The finder in this observation measured the electron flux created directly by the surface reaction using a short-circuited Schottky diode. The laboratory finders measured the current in the short-circuit diode, which means that the finders produced zero power almost exactly. However, the discoverers were convinced of the existence of generator mode. Both hot electrons and hot holes are observed, and at energies above the Schottky barrier in silicon, this is on the order of 0.5 eV.

It has been found that hot electrons at the catalyst surface accelerate the reaction. Experiments with vibrationally excited nitrogen oxides (NO) interacting with the copper (Cu) surface show that
A thousand-fold improvement in surface reactivity was shown. A reaction probability close to 1 was observed. In that study, neither the transfer energy of the reactants nor the surface temperature had a strong effect on the probability of the reaction, and the effectiveness of using hot electrons was confirmed.

In another experiment, carbon monoxide (CO) was oxidized on the surface of ruthenium. 1.5 eV,
Hot electrons were created with a laser pulse duration of 110 femtoseconds. The subpicosecond reaction of adsorbed O with CO was observed to produce CO2, which is energetically totally impossible without hot electrons. This means that when only thermal energy is used, CO desorbs without reacting.

The efficiency of such hot electrons, which transfer vibrational energy only to the adsorbate, can approach 100%. Approximately 100% desorption of CO from the copper surface was observed. A three order increase in the reaction rate between NO and Cu was also observed.

This establishes a strong bidirectional energy transfer between the hot electrons and the excited adsorbate species. Collecting the observation results, the excited structure of the adsorbate reactant adsorbed on the catalyst surface, chemisorbed, or physically adsorbed,
An apparatus and method for coupling to a semiconductor diode excitation structure that is very close to an adsorbate.

The excitation structure of a semiconductor diode is rather simple and is composed of holes in the valence band and electrons in the conduction band. The excited structure of a chemically reactive adsorbate-catalyst system is subject to vibrations of the atoms and molecules with respect to themselves and the substrate to form energy level bands, which are , Due to the excited states of these types of electrons that can acquire transient or permanent charges.

The binding of these structures is primarily by two routes, either directly, through the direct (generally ballistic) transfer of hot carriers, such as hot electrons or hot holes, between the adsorbate and the semiconductor. , Caused by resonant tunneling of energy. Resonant tunneling couples two structures through an oscillating electric field created by excited structures in semiconductors and adsorbate-catalyst systems. This coupling is greatly enhanced when the frequencies of excitation on either side are close to each other.

Hot electrons are the easiest excitations to tackle. Current methods of choice for creating and injecting hot electrons into metal catalyst surfaces rely on pulsed lasers. The usual way to produce these hot electrons is to irradiate the surface of the metal with short laser pulses, the duration of which is typically in the range of 50 to 1000 femtoseconds, and the energy of the photons is , 1 eV or higher (wavelength 0.2-1.5 micron). Photons are adsorbed, creating electrons with energies between 0 eV and the energy of the photons, splitting the energy in hot holes and in hot electrons, which averages about half the incident photon energy. However,
Lasers are one of the cheapest energy sources available.

Theories have been proposed for producing resonantly coupled hot electrons using solid metal-insulator-metal junctions. This theoretical proposal seeks to perform resonance-assisted, hot-electron-induced femto chemical treatment on the surface. The energy for the Fermi level of the catalyst and associated with the metal-insulator junction is now
Higher energy than is known to be suitable for surface resonances. Currently, no experiments using this theory are known. No known statement about process reversibility is claimed.

Methods have also been proposed in the literature for using a neutral semiconductor substrate as a mechanism for injection into a thin metal overlayer and for inducing photons from a pulsed laser as a creator of hot carriers in the semiconductor. It was suggested that this method may be one order of magnitude more difficult to stimulate gas-surface catalyzed reactions than the method using a metal as a photon acceptor. Also proposed is a method of more efficiently producing hot electrons with photons and injecting them into the catalyst surface using a device of a semiconductor substrate, a metal overlayer and a catalyst. However, the important details necessary to make process efficiency useful have not been shown in the manner necessary to ensure process efficiency. When adjusting a Schottky, ohmic or near-ohmic junction between a semiconductor and a metal, the coupling of any hot carriers such as hot electrons or holes should be electrically efficient or resonant. Tunneling needs to be adjusted for efficiency.
The proper use of resonant tunneling and resonant assist processes can be a valuable component in useful devices and methods.

In experiments on hot electron injection into solution, Schottky junction diodes were used. One of the co-authors of the study suggests that the holes, which they wanted, were not cut off because the electrons were cooled by the surface conditions associated with the electrolyte. A catalytic electrode Schottky junction made of N silicon and platinum metal was used to inject electrons into the reactive electrolyte. The thickness of platinum ranges from below the mean free path of hot electrons in platinum to several times the mean free path,
It was different. They had some success, but some problems with the interaction between hot electrons and electrolytes.

Flooding the surface with a liquid electrolyte destroys the effectiveness of hot electrons. The surface condition of the metal-oxide junction was an unsolved problem with this method when the reactive surface was flooded with liquid.

Of the multiple layers of adsorbates that accumulate on the metal-liquid interface, the outer layers far from the catalyst surface trap hot electrons as “polaritons” and use them as a source of rapid reaction stimulators. Alternatively, it is now known to be less useful as a generator of excitation. The effectiveness of the semiconductor substrate below the reactive surfaces of metal and catalyst is a valuable factor. Semiconductor diodes are an important element.

Implicit in all observations is the efficiency of pulsed motion. In the case of a reaction stimulator, the duration of the pulse producing hot electrons is less than the time associated with electron thermal equilibration with the lattice. In the case of a generator, a sudden burst of chemical reaction causes a flood of hot electrons on the catalyst surface. This in turn collects these electrons and causes a flood of electrons in the conduction band of the semiconductor substrate. A sufficiently short burst causes the number of produced electrons to exceed the thermally generated short circuit electrons, thereby increasing the efficiency of electricity generation.

What is lacking in the open region is to adjust the surface of the catalyst to enhance resonant tunneling, enhance activation of selected energy bands, enhance the probability of desired energy transitions, or select reactions. It is a way to improve the route.

SUMMARY OF THE INVENTION The present invention is directed to a method and apparatus for coupling the excited structure of a semiconductor substrate to the excited structure of a reactive adsorbate on the surface of a catalyst. Desirably, the binding is reversible. The reversible reactor uses excitation originating from the semiconductor substrate to stimulate the chemical reaction by the adsorbate species on the surface of the catalyst, and the reverse process to generate the resulting excitation in the substrate. To produce. The method and apparatus, when used in the stimulator mode, use electrical or other forms of energy input to the semiconductor substrate to manipulate the reaction pathway to facilitate the reaction, control the reaction, and react. Manipulates the form of energy produced by and lowers the temperature required to stimulate surface catalyzed reactions, and when used in generator mode, the device is capable of transferring the excitation energy of the adsorbate-catalyst system to the semiconductor. Converted to electricity or other forms of energy in the substrate, and when used in the stimulator-generator mode, the device uses electricity or other forms of energy to manipulate the reaction and, at the same time, electricity or other forms of energy. Other forms of energy can be produced from the adsorbate-catalyst system chemical reaction energy.

In the present invention, electricity or other forms of energy create excitation energy such as hot carriers and are injected into the adsorbate on the catalyst surface and
Used to stimulate surface catalyzed reactions and due to the reversible nature of the process,
One and the same type of device can also be directed to the collection of excitations resulting from surface chemical reactions, such as carriers in semiconductor substrates, and their conversion into electrical or other forms of energy. In one exemplary embodiment, the present invention uses electronically energized semiconductor diodes in a novel manner to stimulate a reaction. For example, in one embodiment, the present invention uses PN junctions as a creator of hot carriers and as an injection mechanism to make them into a thin metal overlayer structure of catalyst material and to adsorbates on the catalyst surface. Join. The same embodiment has the same P
N-junctions can be used to collect hot carriers in a semiconductor diode and forward bias it, thus producing electricity.

The present invention includes a hot carrier emitter (also called an excitation emitter) in intimate contact with a catalyst assembly energy collector (also called a catalyst collector). The excitation emitter includes a semiconductor diode.

When the device is used in stimulator mode, when electrical or other energy is input to the semiconductor diode, the semiconductor diode causes excitation of excess holes or electrons, resulting in hot carriers and resonant resonance. The excitation energy bound to is bound to the excited structure of the catalyst-adsorbate system and is adsorbed, thereby stimulating the chemical reaction of the adsorbate.

When the device is used in generator mode, the excitation energy originating in the catalyst-adsorbate system is coupled to the band excitation of the semiconductor, which generally causes a forward bias in the semiconductor, resulting in electrical Or it may produce other useful forms of energy.

The semiconductor diode includes an emitter, a diode junction and a semiconductor base. The emitter (which is in intimate contact with the catalyst collector) comprises the semiconductor if the diode is a PN junction diode, or the emitter comprises the metal if the diode is a Schottky diode. There is. The junction is the area of contact between the emitter and the base. The emitter also includes electrical contacts. When the hot carriers (semiconductor excitation) are chosen to be electrons, the base contains an N-type semiconductor and the emitter contains either a P-type semiconductor or a metal. When the hot carriers are selected to be holes, the base contains a P-type semiconductor and the emitter contains either an N-type semiconductor or a metal. The base also includes electrical contacts.

The catalyst collector is disposed in intimate contact with the emitter and contains a catalyst, an optional underlayer, and an optional promoter-moderator material. The elements of the catalyst collector are
It may be one and the same as the element of the emitter. The surface of the catalyst and that of any reaction promoter-moderator material are in intimate contact with the reactant chemistry. Different areas of the device using the invention may include different and different modes of energy coupling, including different catalyst collectors, hot carrier emitters, and ballistic transfer and resonant tunneling.

Further features and advantages of the invention, as well as the structure and operation of various embodiments of the invention, are described in detail below with reference to the accompanying drawings. In the drawings, like reference numbers indicate identical or functionally similar elements.

Detailed Description of the Preferred Embodiments A representative embodiment of the present invention uses electrons as hot carriers and PN junction diodes as semiconductor diodes. The base is an N-type semiconductor and the emitter is a P-type semiconductor. When forward biasing a PN junction diode, minority carrier electrons are injected into the conduction band of the P-type emitter, where they become minority carriers. Minority carriers diffuse and move to the catalyst collector,
It may also be resonantly coupled to the excitation of the adsorbate-catalyst system, provided that the distance from the junction to the catalyst collector is less than several times the diffusion length of minority carriers in the P-type semiconductor. is there. For example, if some alloy of InSb, InAs or InGaAsSb is a semiconductor, the diffusion length will be in the range of approximately 100 nanometers to several microns.

According to the present invention, minority carrier electrons are injected into the catalyst collector with energy above the Fermi level of the catalyst collector or are resonantly coupled. This excess energy is almost monoenergetic and has a value approximately equal to the forward bias on the diode. If the semiconductor is a PN junction diode, the minority carrier energy may be within approximately a few kT of the semiconductor bandgap energy (kT = thermal energy, 0.026 eV). If the semiconductor diode is a Schottky junction, the carrier energy may be within about a few kT of the energy required to overcome the Schottky barrier. Electrons with forward-biased energy, also called hot electrons, can quickly penetrate the surface of the catalyst that faces and intimately contacts the reactants, provided that it contacts the reactants from, for example, a P-type semiconductor. This is the case when the distance to the surface is less than several times the energy mean free path of electrons in the catalyst collector.

When the catalyst is a metal such as platinum, palladium, rhodium or ruthenium, the energy mean free path range is between 5 and 50 nanometers. If the underlying layer is copper or gold, the range of the energy mean free path is between 50 and 200 nanometers.

The flux of hot electrons that interacts with the reactant chemistry is approximately the flux of the diode's forward current, provided that the distance from the catalyst collector to the junction of the diode is specified above. This is within the diffusion length of the emitter semiconductor and the energy mean free path length of the catalyst and the lower layer. Hot electrons interact strongly with adsorbates.

In another aspect of the invention, a Schottky diode (also called a tunneling junction) designed to have a low barrier height is used. Such devices are
Doping between the metal and the semiconductor in the Schottky junction results in a near ohmic junction (
Choose to be intermediate between the very high doping used to make electrical contacts to semiconductors (generally) and the medium doping used to make ordinary Schottky diodes. It is composed of Doping controls the width of the depletion region and thus the strength of the Schottky barrier.
Depending on the application, the doping value may be selected between degenerate or high doping and conventional or moderate doping.

If the semiconductor is silicon and the metal is any metal associated with the catalyst collector, the doping may be adjusted to an effective value on the order of 0.1 eV. High doping in silicon effectively yields a barrier of 0.0 eV, and normal doping typically yields a barrier between 0.5 eV and 1.5 eV. This tunneling junction Schottky diode allows the use of common semiconductors such as silicon. The use of such a diode is suitable for use in generator mode in which the reaction is pulsed.

In the methods and apparatus provided in either the PN junction diode or Schottky junction embodiments of the present invention, the semiconductor diode is a surface of the catalyst collector at an energy approximately equal to the energy of the diode's forward bias voltage. Hot carriers are injected into the adsorbate of 1 or the carriers are resonantly coupled. In the method and apparatus provided by the present invention, the energy of the injected electrons is selected so that the user can control the reaction and drive the reaction in a path that includes the reaction path inaccessible to the selected mode or thermal process. You can do it.

Another novel aspect of the invention is the reversible nature of the invention. For example, the inverse of the stimulation process is the collection of electrons created by the adsorbate that reach the catalyst collector and the resonant coupling of energy into the semiconductor diode, thereby allowing carriers such as conduction band electrons or valence band holes to be transported. To create. The catalytic collector acts like a collector of hot electrons created by the chemical reaction energy of the adsorbate, instead of a collector of hot electrons created by the hot carrier emitters. The catalyst collector couples excitements from the adsorbate to the semiconductor instead of coupling excitements from the semiconductor to the adsorbate.
The hot carrier emitter derives its hot electrons from the catalyst collector instead of from the diode junction. Hot carrier emitter is an adsorbate-
The electrons may be created by resonant coupling of energy from the excitation structure of the catalyst. Instead of the hot electrons going out of the diode coupling from the base,
Enter the diode coupling towards the base. Hot electrons then maintain a forward bias on the diode, thereby generating electricity. This reversible property of the invention allows the device to generate electricity as a direct result of a chemical reaction. This is the generator mode.

This same device can operate simultaneously in both stimulator and generator mode, thereby producing electricity more efficiently than if it were operating in generator mode alone. When operated in this manner, the stimulator device triggers and stimulates the adsorbate reaction by applying electrical or other forms of energy to the semiconductor diode. This starts the reaction and terminates it in a short time, for example on the order of picoseconds. The burst of reaction results in a high peak power burst of chemical reaction with simultaneous electron emission. The resulting flood of electrons can be collected, thereby producing electricity. The resulting electrons also stimulate more chemical reactions, and
May initiate a chain reaction similar to an explosion or detonation. The result is
Takes the form of a surface explosion. The electrons can then generate electricity in the semiconductor diode much more efficiently. The power generation efficiency of the diode is a strong function of peak power, and the stimulator creates the conditions under which the reaction achieves such high power.

When operating the device in stimulator mode, energy can be collected in any manner, such as operating the solid surface catalytic reactor in generator mode. Other methods of collecting energy include collecting radiation emitted from stimulated reactions, collecting heat, collecting reaction products themselves, and desorbing kinetic energy of products. However, the method is not limited to these, such as a method of capturing, a method of collecting phonons, a method of stimulating and collecting coherent acoustic or optical radiation, a method of stimulating a piezoelectric device.

When operating the device in generator mode, stimulation can be accomplished in any manner, such as operating the solid surface catalytic reactor in generator mode. Other stimulation schemes include stimulating with pulsed laser light, a simple light flash, or other reaction whose energy output may include hot carriers and other catalytic products that stimulate the reaction. , But are not limited to.

In the PN junction semiconductor of the present invention, a semiconductor having a bandgap of about 0.05 eV to 5 eV may be used for room temperature heat sink operation, and a semiconductor having a bandgap not reaching 0.05 eV is: It may be used when the system is operated below room temperature. This does not preclude the use of a material with a higher bandgap, such as an insulator such as CaF2 with a 12 eV bandgap, or some other material with a higher bandgap. More specifically, the commonly used InSb and
The InGaAsSb material has a forbidden band width that may be continuously selected in the range of 0.1 to 1.5 eV by proper selection of In / Ga ratio and As / Sb ratio. The resulting range of bandgap lies exactly within the range of energies associated with hydrocarbon chemical bonds. The InSb material produces 0.18 eV electrons, which is ideal for favoring reaction stimulus versus desorption. This is because higher energy electrons can stimulate an undesirably large portion of desorption, as opposed to surface reactions.

The PN junction embodiments of the present invention provide a substrate whose energy level is comparable to the excited state energy level of the adsorbate. This is in either direction, ie
Greatly enhances resonant transfer to and from the adsorbate. The metal of the catalyst collector causes resonant tunneling coupling between the adsorbate and the semiconductor substrate, for example, through plasmons. Resonant tunneling coupling effectively couples the substrate energy band structure to the adsorbate energy band structure. The ohmic or near-ohmic junction between the catalyst collector and the semiconductor effectively nails the Fermi level of the catalyst collector to the valence band of the semiconductor. The conduction band of a semiconductor is higher than the valence band by an amount equal to the band gap of the semiconductor, and thus is visible above the Fermi level of the catalyst collector by the same amount, namely the energy of the band gap. Bandwidth is about 0.05 e
The energy of the band gap can be made comparable to almost any energy level of the system with adsorbate and catalyst collector, as long as it is freely chosen between V and 5 eV. Choosing the semiconductor bandgap to match the energy levels of the adsorbate on the catalyst collector effectively couples the two through known and commonly used processes of resonant tunneling. be able to. Resonant tunneling greatly increases the cross section for energy transfer.

This is useful for controlling the reaction in stimulator mode. This is because the selected energy level of the adsorbate can be resonantly activated by the hot carriers coming from the semiconductor. Also, this is in generator mode,
It is useful. Because, the adsorbate in the excited vibrational state is resonantly coupled to the semiconductor,
This is because energy transfer can be enhanced. This is useful in the stimulator-generator mode. Because the stimulator can use a relatively small stimulator energy to trigger and initiate the reaction of the adsorbate, the reaction then explodes or reacts on the surface catalyst collector exposed to the reaction. It can be spread in a manner similar to detonation, which allows
This is because the hot carrier is released. The hot carriers can then generate heat, thereby generating electricity at a faster rate at which they lose energy.

In one embodiment, hot carrier emitters are fabricated with degenerately or highly doped PN junctions. In this embodiment, the switching speed is a Schottky junction due to the high carrier density and the high semiconductor doping density, which results in the formation of a staircase junction, similar to that of a Schottky diode. You can approach the speed of the department. The high switching speed enhances the ability to pulse the stimulator and causes a high peak power response. The PN junction can then supply a lower energy hot carrier of at least 0.05 eV, and certainly less than or equal to 0.4 eV, depending on the selected bandgap. The PN junction can supply very high energy monochromatic hot carriers, the energy of which is equal to the bandgap of the semiconductor, above 5 eV for known devices. The PN junction has one that is much longer than the diffusion dimension of the Schottky junction, between 200 nanometers and a few microns, the hot carriers migrating beyond that diffusion dimension and with the surface catalyst. Allows for much larger and manufacturable semiconductor devices that can interact. In addition, highly-doped or degenerately-doped semiconductor contacts can be created using substantially ohmic contacts to mitigate surface state problems.

Another novel aspect of the present invention is the co-existence of both electrically powered reaction stimulators, and vice versa, reaction driven electric generators. The stimulus is
It causes a high rate of reaction, which results in a high peak power, which in turn makes the energy generator more efficient.

In another novel aspect, the invention allows a device to act as both a stimulator and a generator. The use of the reaction-stimulation combination involves the following steps. That is, 1) controlling the catalytic reactions, 2) monitoring these reactions using the generated electrical signal, 3) having an undesirably low reaction rate, but highly desirable selectivity. 4) accelerating the reaction on the catalyst it has, 4) producing a non-thermal control of the reaction pathway, 5) stimulating a very rapid surface chain reaction to achieve a high peak power while achieving a low Maintaining average power, 6) causing the catalyst to have a chemical reaction temperature similar to that of the hot carrier, which may be well above the physical temperature of the catalyst, 7) stimulator-generator mode Now, one type of stimulator is used to pulse the device to generate electricity, and another type of stimulator is used to cause self-cleaning of the device. For example, removing unwanted chemical by-products that may build up and accumulate with use, 8) initiate reactive electron avalanches and produce their own hot carriers in the chemical reaction, , Force the diffusion in the opposite direction and allow the device to act as an electrical generator.

As mentioned above, the present invention provides a method and device for stimulating and manipulating chemical reactions using selected electrical energy inputs to the surface of a catalyst and for producing electrical energy through the reverse process. It can be used in various ways.

For example, the present invention creates hot carriers, especially hot electrons, and transports them to bind to reactive adsorbates on the catalyst surface, such adsorbates being effective above the temperature of the catalyst surface. A method and apparatus for making a device that achieves stable vibration temperatures. Vibration energy and temperature are used interchangeably. Energy is the product of the Boltzmann constant and absolute temperature. Such effective oscillating temperature, in turn, accelerates the reaction rate on the catalyst. Excited vibrational atomic and molecular adsorbates are
In both cases, it is observed that the reactivity is higher than that in the grounded state on the adsorbate, not on the catalyst surface. The methods and apparatus of the present invention use electrical stimulation to increase the vibrational energy or temperature of an adsorbate without appreciably increasing the thermal energy or temperature of the substrate.

In another aspect, the invention is directed to a method and apparatus for reversing the above process, wherein the excitation energy, the electron or hole generated by the chemical reaction described above, is: It is converted and coupled to a semiconductor substrate to become electricity.

Accordingly, one aspect of the present invention is a reaction stimulator that uses electricity to create energetic carriers, and more specifically hot electrons, in a hot carrier emitter and efficiently injects these carriers into a catalytic collector. Method and apparatus. Desirably, the temperature of the catalyst or substrate need not be raised during the reaction stimulus.

In another aspect, the invention collects energetic carriers, more specifically hot electrons, produced by the reaction on the catalyst surface, which are forward biased through the emitter-base junction. A reactive stimulator-generator method and apparatus for charging a diode and thereby producing electricity is directed.

In another aspect, the invention is directed to a reaction stimulator that injects hot carriers or hot electrons in the range of energies required to selectively promote the desired type of surface chemistry. Desirably, the reaction stimulator is simple in design, robust in structure, and economical to manufacture.

In another aspect, the invention is directed to a reversible reaction stimulator in which the diffusion of hot carriers is in either direction, ie,
The process may proceed from the chemisorption reaction to the hot carrier emitter (in which electricity is generated), or from the hot carrier emitter to the chemisorption reaction (in which electricity is used to stimulate the reaction).

In yet another aspect, the invention utilizes the heat of vaporization of the reactants as a coolant for the operation of the semiconductor junction.

Thus, the method of stimulating a response includes the step of forward biasing a semiconductor diode with electrical energy, in which the potential across the electrical contacts of the semiconductor diode causes the diode to be biased. Hot carriers, such as hot electrons, that diffuse from the junctions of the and are transported through the catalyst collector to the chemisorbate, which stimulates and reacts with the adsorbate.

Accordingly, the method of generating electricity includes the steps of using chemisorptive reaction energy to create hot carriers within the catalyst collector, and transferring or bonding the hot carriers to the junction of the semiconductor, the semiconductor. In the forward direction, thereby generating electricity.

The method also includes utilizing a carrier diffusion process that transfers energetic carriers, such as hot electrons, to the junction of the diode and from there to the catalyst collector.

The method also uses a catalyst collector to collect the hot carriers provided by the emitter and transfer or bind them to chemisorbents on the catalyst surface, or to any promoter-moderator. Alternatively, the process involves the reverse process, collecting hot carriers created by the chemisorbate on the catalyst or any reaction promoter-moderator and transferring or binding them to the emitter.

The method also includes metal clusters, layers, atomically uniform monolayers, surface structures, crystalline layers, or one-dimensional, two-dimensional or three-dimensional such as quantum dots, quantum stadia, quantum corals and quantum wells. Forming a dimensional quantum confinement structure from a material that includes a catalyst collector. The method also employs such layers and quantum confinement structures to tailor the state of electron and hole densities of the material, thereby providing favorable conditions for formation or reaction with hot carriers. The process of producing is included. Such conditions include the depletion of the number of electrons available to damp the vibrational energy of the adsorbate-substrate system having a transition energy value less than the energy of the forbidden band of the substrate.

The present invention includes a surface catalyzed reactor having tailored electron density states and tailored energy decay modes. For example, electron density conditions may be modified by forming a prescriptive electron-reflecting or hole-reflecting structure of the material on the catalyst collector surface exposed to the reactants.

The method of the present invention tunes the state of carrier density near the Fermi surface of the catalyst collector to increase the probability that electron-hole pairs with the desired energy distribution will be formed and the adsorbate- A step is included to enhance the stimulation of resonant tunneling coupling in the oscillatory state of the substrate system. Hot electron Fa of thin film electron interferometer
A bry-Perot mode formation and tuning process may be included.

The state of electron density uses catalysts and other substrate materials to form electron interferometer structures, including steps, channels, stadia, corels, pyramids, polygons, valleys, walls, periodic reflectors, and chaotic. It may be modified by forming a structure that causes multipath reflection of electrons, including but not limited to reflectors.

The method also employs a combination of different catalyst materials, and an optional reaction promoter-moderator material combination, as part of the catalyst collector, such materials
Forming into any shape, including but not limited to islands, clusters, inter-finger and random structures, and stripes may be included.

The method also selects a catalyst and an optimal promoter-moderator material that retards or delays the reaction of the adsorbate so that the reaction rate can be better controlled by the use of the stimulation mode. Steps may be included. Such material may be part of the catalyst itself, adjacent to the catalyst, or it may be a consumable product carried by the fuel-oxidant mixture.

The method also includes selecting a catalytic material having a desired lower Debye frequency of hot carrier energy to increase the probability that hot electrons will interact with the adsorbate rather than with the phonon oscillations of the catalyst. May be included.

The shape of the device may fit the contour specified by the user. Because the basic shape is determined by factors whose thickness is limited only by the dimensions of the semiconductor, and whose length and width are limited only by the ability to cut or form the part. This allows component dimensions of 10 microns or less. This allows the contours of the device to be virtually any macroscopic physical shape.

The method may also include using a pulsed stimulus. The pulsed action stimulates the reaction so that it occurs with high peak power and short duration. This allows the device to remain relatively cool for a longer period of zero stimulation after completion of the response, and the response is high during the relatively short period of pulsed stimulation. Allows to happen at temperature and high peak power. Pulsing allows the reaction to occur before the reaction is caused by a thermal process. Pulsing allows the reactants to be depleted in a shorter time than they can be replenished by the reactant gas mixture, ie, via the gas motive means.

The method also includes using an optional underlayer material as part of the catalyst collector. The underlayer may be a metal such as copper, gold, silver or aluminum and is selected to be compatible with obtaining the desired properties in the semiconductor components of the hot carrier emitter. One desired property is an ohmic or near ohmic junction. The underlayer may be used as an electrical connection in the hot carrier emitter and also as an electrical connection to the catalyst collector. The underlayer is a substrate on which is created a catalyst structure, more underlayers, or a specified shape and crystallographic orientation of the deposited material as part of the catalyst collector, or on top of which the underlayer is deposited. It may be used as a substrate for adjusting the lattice constant of the prepared material.

The method also includes limiting the thickness of the underlayer to no more than the number energy mean free path of the hot carriers selected for the device. For example, any underlayer, where the underlayer metal comprises (but is not limited to) platinum, nickel, palladium, rhodium, rhenium, copper, gold, silver or aluminum, one monolayer (
Between approximately 0.3 nanometers) and 50 nanometers.

The method includes all or selected configurations of devices in an optical cavity tuned to an energy associated with a semiconductor or catalytic collector, or adsorbate, or some combination of these elements excitation structure. It includes the steps of surrounding the element.

The device according to the invention for stimulating a reaction or for generating electricity comprises a hot carrier emitter and a catalytic collector. The hot carrier emitters belonging to this device include semiconductor diodes.
A semiconductor diode includes a semiconductor base, a diode junction, also called an emitter base junction, and an emitter. The emitter contains a semiconductor or a metal as a diode element. The device may also include a first electrical connection to the emitter and a second electrical connection to the base.

The device according to the invention for stimulating a reaction or for generating electricity comprises a semiconductor excitation structure or a system comprising a catalytic collector and a chemisorbant, any desired energy level. Any optical resonator tuned to the transition of 1 may be included. Such optical resonators include metal and dielectric microcavities, piezoelectric structures exhibiting photonic bandgap characteristics, Fabrey-Perot cavities, textured mirrors,
Dispersive Bragg reflectors, single and coupled semiconductor microcavities, wavelength filters or external cavities with large dispersity, quantum dot vertical cavities, microdisk cavities,
Quantum dot microdisk cavities, laser waveguides with or without cladding, dielectric slab waveguides, cavities associated with electromagnetic surface waves at the metal-semiconductor interface without the need for any additional confinement layers (surface plasmons , Also referred to as chaotic cavities, optical cavities with a modified cross section, cavity designs incorporating chaotic radiation motion, and symmetric cavities with whisper-gallery modes. Not a thing.

In one embodiment, the hot carriers are electrons, the diode is a PN junction made from InSb with an N-type base and a P-type emitter, and the catalytic collector is the emitter electrical conductivity. Exist or coexist near the contact. The catalyst assembly includes catalytic metals, such as any alloy of platinum and palladium, deposited on surface structures, clusters or quantum confinement structures. The composition or shape of the catalyst is such that the distance from the region of the catalyst exposed to the adsorbate to the semiconductor is mainly 3 times or less than the energy mean free path in platinum, and the mean free path is approximately 20 nm. . The catalytic metal is in direct contact with the semiconductor of the emitter,
The semiconductor is degenerately doped to form an ohmic or tunneling junction. In this embodiment, the PN junction is formed at a distance from the catalyst collector that is less than or equal to three times the electron diffusion distance in the P-type conduction band, which diffusion distance may be at least 200 nanometers. The device is in stimulator mode, generator mode or stimulator-generator mode, and
Hot electrons can be operated if they can be created either by chemisorption reactions or by the input of electrical energy into a semiconductor diode.

The reversible solid-catalyst excitation-transfer reaction device of the present invention is a combination of the excitation band structure of the adsorbate-catalyst system and the excitation band structure of the semiconductor substrate. The device may be designed to work with gaseous reactants. In generator mode, the energy of excitation on the surface of the catalyst collector and associated with the chemical reaction of the adsorbate with the surface of the catalyst collector is converted into excitation such as hot carriers and electromagnetic fields.

Excitation energies associated with adsorbate reactions include excited reactant molecular vibrations molecule-surface vibrations, atom-surface vibrations, adsorption reactions, chemical reactions and excited electronic states. Transformed excitations such as hot carriers and electromagnetic fields are transferred to the excitation emitters where semiconductor or emitter excitations can occur and be converted to useful forms of energy. Emitter excitation includes minority carriers in semiconductors, hot carriers, carrier diffusion, coupling fields, excitons, and plasmons.

Also, in generator mode, on and on the surface of the catalyst collector, such as excited reactant molecular vibrations, molecule-surface vibrations, atom-surface vibrations, adsorption reactions, chemical reactions and excited electronic states. Pulses of energy of excitation associated with the chemical reaction of the adsorbate with can be converted into excitations such as hot carriers and electromagnetic fields. These excitations may be the emitters, or minority carriers in the semiconductor, hot carriers,
Carrier diffusion, coupling fields, excitons, and plasmons occur and are transferred to the pump emitter, which can be converted to useful forms of energy.

In one embodiment, the excitation emitter and the catalyst collector may share components common to both.

FIG. 1 shows a general cross-sectional view of a solid surface catalytic reactor device. The device 100 includes an emitter 102 and a catalyst collector 10 formed on a base 108.
Includes 4. A semiconductor PN junction 1 is provided between the emitter 102 and the base 108.
10 are formed. Emitter electrical connection 114 and catalyst collector 104
Are arranged as shown in FIG. As shown in FIG. 1, the base electrical connection portion 112 is also provided in contact with the base 108. On the catalyst surface 116 of the catalyst collector 104, the reactants and products interact. Reactants may include, but are not limited to, hydrocarbon chains, ethane, ethylene, propane, propylene, propene, butane, cetane, isomers thereof.

In the stimulated mode, the device 100 utilizes electrical energy to create energetic carriers (also called hot carriers or hot electrons).
The hot carriers diffuse into the catalyst collector 104 and interact strongly with the reactants on the catalyst surface 116, accelerating the reactants and creating reaction products. The stimulated reaction may produce a phenomenon equivalent to a chain reaction or surface explosion. The stimulated reaction may also cause an autocatalytic chain reaction.

In generation mode, hot electrons are created by chemical reactions that occur on the catalyst surface 116 and diffuse across the junction 110, eg, the PN junction, with a forward bias across the junction, Generates electrical energy.

In a representative example, a PN junction is used with a P-type emitter and an N-type base to create hot electrons. Therefore, the junction 110 may be forward biased. If the hot carriers are hot electrons, the junction may be a PN junction with a P-type emitter and an N-type base, as opposed to hot holes. Alternatively, the junction may be a Schottky junction with a metal emitter and an N-type semiconductor base.

In the stimulated mode, the forward biased junction 110 produces hot electrons. For example, the base contact 112 may be negatively biased and the emitter contact 114
Is positively biased, hot electrons are generated at the junction 110. Hot electrons diffuse through the emitter 102 and are ballistically transported through the catalyst collector 104 to the catalyst surface 116.

In the generator mode, hot electrons emitted on the catalyst surface 116 are also
Ballistically transported through the catalyst collector 104 and diffused to the junction 110,
The emitter base junction diode 110 may be forward biased.

For example, as hot electrons are transferred and diffused from the catalyst surface 116 to the junction 110, the base contact 112 is negatively biased and the emitter contact 114 is positively biased, and the diode of the present invention is biased. Is an electron source instead of a sink.

These hot electrons are transmitted up to the emitter 102 or the emitter 10.
2 and up to or from the catalyst surface 116. Therefore, in one exemplary embodiment, the distance from the diode junction 110 to the adsorbate on the surface 116 of the catalyst is formed to be less than the distance over which the energy of these carriers degrades. This distance, when evaluated over the path from the emitter-base junction 110 to the adsorbate on the catalyst surface 116, is typically less than a few times the energy mean free path of such energetic hot electrons.

Using the process described above, the reactants adsorbed on the catalyst surface are brought into an oscillatory excited state by hot electrons, which excites the reaction to form a product. Using these means, hot electrons created by the reactants adsorbed on the collector catalyst assembly create a potential in the forward biased diode.

In an exemplary embodiment of the invention, the catalyst collector 104 includes layers, clusters,
It contains a catalytic material with an atomically uniform monolayer or surface structure. Desirably, the layer or cluster has a thickness dimension no greater than several times the total energy mean free path of hot electrons within the catalyst. The layer or cluster is formed sufficiently close to the diode junction 110 to allow hot electrons to diffuse directly between the junction 110 and the catalyst surface 116.

The total energy mean free path of hot electrons in catalysts such as platinum or palladium is of the order of 20 nanometers, much shorter than in Au, Ag or Cu. Therefore, according to one exemplary embodiment, the catalyst clusters or layers are manufactured with a cluster, layer thickness or thickness dimension below this lower value. For example, electron energy lifetimes were measured with tantalum, a typical transition metal that electronically resembles the platinum group, and its value is on the order of 15 fs. The calculated lifetime of palladium based on Fermi inverse square scaling is 0.3 eV
At 600 fs, the total energy mean free path would be 840 nanometers. Instead of this large optimistic value, the lifetime is estimated to be as short as that measured for tantalum. Therefore, the total energy mean free path of platinum or palladium is on the order of 21 nanometers. In this embodiment, the catalyst size is less than or equal to the measured energy mean free path of hot electrons. These discussions regarding the total thickness of the catalyst and the lower layer that is the electrical connection to the catalyst indicate that the path taken by hot carriers through such catalyst and lower layer should not be so long as to significantly degrade the energy of the hot carriers, However, any dimensions satisfying this condition are acceptable.

Desirably, the methods provided herein produce electrons with energies in the range that favor reactions over desorption. These energies are in the range of 0.05-0.4 eV. Similarly, the method of collecting electrons created by chemical reactions on the catalyst surface collects electrons whose energies are also in the range of 0.05-0.4 eV. Therefore, a semiconductor material having a bandgap of approximately 0.4 eV or less may be used.
Examples of such semiconductor materials include indium antimony (InSb) and indium arsenide (InAs), which have band gaps of 0.18 eV and 0.35 eV, respectively. Energetic electrons created in these semiconductors have energies approximately equal to the bandgap in the emitter of P-type semiconductors. The hot electrons diffused back into the N-type base create a potential whose magnitude is close to the energy of the forbidden band. Generally, the bandgap value is chosen based on the energies associated with the reactant types and their surface activity.

In one exemplary embodiment, the catalyst cluster may further comprise moderators or activators, deactivators, oxides or other materials placed in their vicinity, as shown in the cross-sectional view of FIG. Accelerators may be included. FIG. 2 shows a cross-sectional view of a catalyst collector including a reaction promoter-moderator material 206 adjacent to and co-existing with the catalyst material 202. As shown, the hot electron catalyst collector includes a catalyst material 202, an optional thin electrode underlayer 204, and a reaction promoter-moderator material 206 such as an oxide. For example, cerium, titanium or aluminum oxides of the catalyst itself may form between the catalyst islands or layers. The total size of the catalyst and thin electrode layer 204 is desirably no more than a few times the total energy mean free path of hot electrons.

Figures 3, 4, and 5 show several different embodiments of catalyst collectors used in the solid surface catalytic reactor of the present invention. As shown, the catalyst collector is either an island that is directly on the semiconductor (FIG. 3), or an island of catalyst on the thin electrode underlayer (FIG. 4) that also forms the electrical connections for the hot carrier emitters. Alternatively, an island of catalyst having a promoter-moderator material surrounding or adjacent to the catalyst, all present on a thin electrode underlayer that also forms electrical connections for the hot carrier emitters. Islands (FIG. 5), etc., may be included.

The catalyst may include materials such as Au, Ag, Pt, Pd, Cu, In, Fe, Ni, Sn, and Mo. The catalyst may be formed into structures including metal clusters, pillars, islands, layers, crystalline layers, atomically uniform monolayers, inter-finger and random structures, stripes, or surface structures. Catalysts are also one-dimensional, such as quantum dots, quantum stadia, quantum corals and quantum wells,
It may be formed in a two-dimensional or three-dimensional quantum confinement structure.

FIG. 3 shows a cross-section 300 of a solid surface catalytic reactor device including hot carrier emitters, catalyst collectors where the carriers are electrons. The catalyst collector assembly is preferably formed so that the distance to the semiconductor 304 is no more than three times the total energy mean free path of hot electrons in the catalyst 302.
Includes 2. Desirably, the catalytic island 302 is bonded to the P-doped or heavily P-doped P + region of the semiconductor 304. In one embodiment,
The catalyst material 302 extends over the surface of the semiconductor. In another embodiment, the catalyst is formed with a surface structure that includes an atomically uniform monolayer.

The hot, eg, electron, carrier emitter is the negative electrode 306 in contact with the N-type semiconductor 308, the P-type semiconductor 312, the N-type semiconductor 308 and the P-type semiconductor 3
12 includes a PN junction 310 formed between the semiconductor substrate, a P-doped or heavily P-doped P + semiconductor 304, and a semiconductor diode formed by a positive electrode 314.

FIG. 4 shows a cross-sectional view 400 of a solid surface catalytic reactor device having thin electrodes 402 forming a substrate of catalytic structure. In this embodiment, the catalyst collector includes a thin electrode underlayer 402, a catalyst structure 404, and a busbar electrical connection 406 in electrical contact with the thin electrode underlayer 402. The hot electron emitter comprises a negative electrical connection 408, an N-type semiconductor 410, a PN junction 412, a P-type semiconductor 414, a P-doped or heavily P-doped P + semiconductor 416, and a thin electrode underlayer 402. It includes a formed semiconductor diode. As shown, the electrode underlayer 402 may be common to the hot electron emitter and the catalyst collector. The thin electrode underlayer 402 may be a thin positive electrode. The thin electrode underlayer 402 is desirably selected from materials that form an ohmic or near ohmic junction with the semiconductor.

The thin electrode lower layer 402 provided in the present invention forms an ohmic junction or a substantially ohmic junction with the semiconductor 416, while hot electrons are used as the catalyst 4.
Routes to enter or leave the catalyst 404 are also provided. Depending on the choice of catalytic metal and semiconductor combination, a Schottky junction may instead be formed due to the ohmic properties of the junction between the semiconductor 416 and the catalyst 404. If a Schottky junction is formed, the metal layer, ie the thin electrode underlayer 402, is
Used as a means for forming a substantially ohmic junction, the junction may be a substantially ohmic or tunneling Schottky junction. The catalyst cluster or layer 404 thus overlies the thin electrode underlayer 402. In an exemplary embodiment, the thickness of the electrode underlayer 402 is chosen to be much smaller than the energy mean free path of hot electrons through it.

Within the commonly used contact metals such as silver (Ag), gold (Au), and copper (Cu).
For 3 eV electrons, the lifetime of electron energy is greater than 200 femtoseconds and the electron velocity is on the order of 1.4e6 meters / second. The resulting energy mean free path is therefore on the order of 280 nanometers.
This allows the underlying electrical contacts to the semiconductor to be on the order of thicker than the catalyst collector, thus enhancing manufacturability. Au, Ag and
A thin, 1-5 nanometer (nm) layer of Cu conductor is routinely created on the semiconductor, allowing the thin layer to form an ohmic or near-ohmic contact with the semiconductor. This thin layer, eg, thin electrode 402, contains the Fermi level of the catalyst and
It ensures that the Fermi levels of P-type semiconductor emitters are the same or substantially the same. In this embodiment, a thin metal such as Au, Ag or Cu, 1-2
The 0 nanometer (nm) layer may be used as the electrode 402 or a substrate for catalyst assembly. In addition, the present invention provides a selection of contact metals used to form the electrodes, Au, Ag.
It should be understood that other metals, alloys or semi-metals may also be selected to form at least a substantially ohmic contact with the semiconductor, or not limited to Cu.

A hot electron emitter is provided, for example, at 304 in FIG. 3 and at 41 in FIG.
As shown in FIG. 6, in embodiments that include a heavily-doped semiconductor, the material used for the thin electrode 402 is such that the junction between the electrode 402 and the heavily-doped semiconductor 416 is at least approximately. It may be chosen to form an ohmic junction. Desirably, the formed bond is an ohmic bond. In order to form an ohmic or near-ohmic junction, the doping of the semiconductor should be chosen high enough to
The size or thickness of any Schottky barrier formed by this junction should be small enough that the current is dominated by electron tunneling. Therefore, the P-type semiconductor may be densely or degenerately doped near the region of contact with the metal. Such dense doping occurs when the concentration of dopant exceeds approximately 1e18 per cubic centimeter. FIG. 3 shows the emitter electrical connection 314.
This heavily doped region 304 is shown in the vicinity of both and the catalyst cluster 302. FIG. 4 illustrates a heavily doped region 416 in contact with the thin electrode underlayer 402.
Indicates.

As an example, it is considered that the preferable doping of the 2e19 / cc donor in InSb or InAs is such a dense doping. Degenerate doping of semiconductors up to 2e20 / cc and adhesion of suitable metals such as Au, Ag, or Cu as thin metal contacts can create near-ohmic electrical connections in the semiconductor. Almost any metal can form such a substantially ohmic electrical connection. This is because the junction size under dense or degenerate doping is on the order of 1 nanometer or less, where tunneling between the ends of the junction dominates. This type of junction typically has a characteristic PN junction dimension on the order of 3 nanometers or less and an electron diffusion length of 1 micron or more in the emitter and collector regions. This dimension may be limited by Auger recombination. Thus, the emitter and catalyst collector elements of the present invention are readily manufacturable, with 0.1 micron thickness and larger dimensions being virtually routinely achieved.

The thin electrode is bonded to the surface of the P-type semiconductor. The catalyst cluster or layer is placed on the thin electrode, preferably near the PN junction. "Nearby" is defined as "a distance that is within the minority carrier diffusion dimension in the emitter semiconductor". This dimension is typically on the order of 0.1 micron or greater. The calculated diffusion length of electrons in P-type InSb doped to 2e20 / cc is of the order of 7 microns and InAs is of the order of 5.5 microns. However, the observed Auger lifetime of 1 picosecond suggests that the diffusion length is on the order of 1 micron. As will be appreciated by those skilled in the art, this dimension is well within the current manufacturing level of the technology. Thus, the catalytic metals 302 and 404 or the thin metallic contact underlayer 402 can be used as both positive electrical connections for the catalytic collector and emitter. This also reduces manufacturing cost and complexity.

FIG. 5 is a solid surface catalytic reactor device similar to that shown in FIG. 4 and having a reaction promoter-moderator material 502 surrounding or adjacent to the catalyst structure 404. A cross-sectional view 500 is shown. As described with reference to FIG. 2, the catalyst clusters may further include chemical surface reaction activators, promoters or moderators, such as oxides or other materials placed in their vicinity. As shown, the catalyst collector includes a catalyst structure 404, an optional thin electrode underlayer 402, and a catalyst promoter or moderator 502 such as an oxide. For example, oxides of the catalyst itself or oxides of cerium, titanium or aluminum may be formed between catalyst islands or layers. The distance that hot electrons must travel through the catalyst 404 and the thin electrode underlayer 402 is desirably no more than a few times the total energy mean free path.

FIG. 6 shows a single metal element 6 which at the same time is the electrical connection to the emitter, the lower layer of the catalyst collector and which forms the metal element of the Schottky diode.
5 shows a cross-sectional view 600 of a solid surface catalytic reactor device including 05.

Shown in FIG. 6 is a solid surface catalytic reactor device using Schottky diodes. A Schottky diode has a single metal element 605, a more heavily doped semiconductor 604 (shown as N-type for a suitable description when the hot carriers are hot electrons), a less doped semiconductor region. Formed between 601 and the thicker negative electrical connection 606. The bus bar 602 serves as an electrical connection portion of the positive thin electrode 605 that allows current to flow. In operation, the diode is pulsed with forward bias, ie electrode 606 is pulsed negative with respect to positive electrode 605 and dissipates power. This is the catalyst assembly 607.
Trigger the upper surface reaction to form the product. The excess reaction energy causes a burst of hot electrons, which results in a thin catalyst structure 607 and element 6
It may travel through 05, cross the Schottky barrier potential, enter diode regions 601 and 604, and forward bias the diode to produce power.

For the sake of explanation, the reversibility of this embodiment is shown. The reactive stimulus properties of the same device may be its basic function. Also, the electricity generation characteristic may be its basic function.

FIG. 7 shows an electron energy level diagram 700 of the elements of a solid surface catalytic reactor device suitable when the hot carrier is hot electrons. These elements include adsorbate 702, catalyst 704, positive electrode or electrical connection 718, electrode junction, highly doped semiconductor in collector-emitter region 706, P-doped semiconductor region 708, PN junction region 710, N-doped semiconductor region 71
2 and a heavily N-doped semiconductor region 714.

In the stimulated mode, a forward bias 716 drives electrons from the N + region 714 where the majority carriers are to the semiconductor PN junction 710, to the P type region 708 where they are the minority carriers, and 704, and then to the catalyst surface, where it interacts with adsorbate 706. Hot electrons excite the adsorbate into states that stimulate the reaction.

In generation mode, the energy decay path in the excited state of the adsorbate creates hot electrons at the catalyst surface; the hot electrons then migrate through the catalyst to the P-type semiconductor region and then the PN junction 710. Continue to
So they are swept into the N + region 714 by the internal electric field in the semiconductor,
A forward bias is created, which is the source of power.

In this and all other embodiments, the effectiveness of the stimulator, generator and reactor can be greatly increased by feeding the reactants in the gas phase. In this case, the adsorbates on the catalyst surface interact with the hot carriers.
When the catalyst is covered with a liquid, multiple layers of adsorbates adsorb hot electrons and diminish their effectiveness. Therefore, the point of novelty of the present invention also includes the use of forward biased devices for the purpose of stimulating a response or generating electricity.

While this invention has been shown and described, in detail, with respect to its preferred embodiments, changes in the foregoing and other details in form and detail are without departing from the spirit and scope of this invention. What can be done in the present invention will be understood by those skilled in the art. For example, those skilled in the art will appreciate that the features of the present invention may be used to advantage without the corresponding use of other features shown or described above. Similarly, it is possible to combine several features within the scope and equivalents of the invention to achieve a desired result.

[Brief description of drawings]

1 shows a general, schematic cross-section of a solid surface catalytic reactor device of the present invention in one embodiment.

[Fig. 2]   3 shows a cross section of a catalyst collector in one embodiment of the present invention.

FIG. 3 shows a cross section of a reaction stimulator device with catalyst clusters forming a catalyst collector.

FIG. 4 shows a cross-section of a solid surface catalytic reactor device with thin electrodes forming the substrate for the catalyst clusters as part of the catalyst collector and also forming the electrical connections for the hot carrier emitters.

FIG. 5 shows a cross-section of a solid surface catalytic reactor having a reaction promoter-moderator material surrounding or adjacent to the catalyst metal.

FIG. 6 shows a cross-section of a solid surface catalytic reactor with a single metal element which at the same time is the electrical connection to the emitter, the lower layer of the catalyst collector and which also forms the metal element of the Schottky diode. .

FIG. 7 shows an electron energy level diagram for a solid surface catalytic reactor illustrating the region from N + N-type base to adsorbate.

[Procedure Amendment 2]

[Document name to be corrected] Drawing

[Correction target item name] All drawings

[Correction method] Change

[Contents of correction]

[Figure 1]

[Fig. 2]

[Figure 3]

[Figure 4]

[Figure 5]

[Figure 6]

[Figure 7]

─────────────────────────────────────────────────── ─── Continued front page    (31) Priority claim number 60 / 186,567 (32) Priority date March 2, 2000 (2000.3.2) (33) Priority claiming countries United States (US) (31) Priority claim number 09 / 631,463 (32) Priority date August 3, 2000 (August 2000) (33) Priority claiming countries United States (US) (81) Designated countries EP (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, I T, LU, MC, NL, PT, SE), OA (BF, BJ , CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG), AP (GH, GM, K E, LS, MW, MZ, SD, SL, SZ, TZ, UG , ZW), EA (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM), AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, C A, CH, CN, CR, CU, CZ, DE, DK, DM , DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, K E, KG, KP, KR, KZ, LC, LK, LR, LS , LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, R U, SD, SE, SG, SI, SK, SL, TJ, TM , TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW (72) Inventor Gudwani, Javaha, M             California, United States             94133, San Francisco, Leavenwar             S 2335 F term (reference) 4G075 AA30 AA65 BD14 CA39 EB31

Claims (150)

[Claims] 1. A solid-state surface-catalyzed excitation transfer reaction apparatus including:
Catalytic collector; and one or more energy analysis is converted into excitation in the reaction of the adsorbed material occurring in the catalytic collector where the excitation band structure is related to the emission nucleus excitation occurs Excited-emission nuclei containing a pn-junction diode combined with an associated excitation-band structure together with a catalyzing collector transported to the pn junction diode. 2. The reaction of the adsorbent material occurs on the surface of the catalytic collector.
Equipment required in 1. 3. The apparatus as claimed in claim 1, wherein the reaction of the adsorbent material occurs with the surface of the catalytic collector. 4. The apparatus as claimed in claim 1, wherein one or more energy analyzes include one or more excite the reactant molecular vibrations. 5. The apparatus as claimed in claim 1, wherein the one or more energy analyzes include one or more molecular surface vibrations. 6. The apparatus as claimed in claim 1, wherein the one or more energy analyzes include vibrations of one or more atomic surfaces. 7. The one or more energy analyzes include one or more adsorption reactions.
Equipment required in. 8. The apparatus as claimed in claim 1, wherein on or more energy analysis involves more than one chemical reaction. 9. The apparatus as claimed in claim 1, wherein the one or more energy analyzes include one or more excited electronic states. 10. The apparatus as claimed in claim 1, wherein the excitation comprises one or more hot carriers. 11. The device as claimed in claim 1, wherein the excitation comprises one or more electromagnetic fields. 12. The device as claimed in claim 1, wherein the emission nuclear excitation comprises one or more minority carriers. 13. The device as claimed in claim 1, wherein the emission nuclear excitation comprises one or more hot carriers. 14. The device as claimed in claim 1, wherein the emission nuclear excitation comprises energy analysis transported by carrier diffusion. 15. The device as claimed in claim 1, wherein the emission nuclear excitation comprises coupling an electric field. 16. Apparatus as claimed in claim 1, wherein the emission nuclear excitation comprises one or more exciters. 17. The device as claimed in claim 1, wherein the emitted nuclear excitation comprises one or more plasmons. 18. A solid state surface catalyzed transfer transfer reactor as claimed in claim 1 in which there is a catalytic collector in contact with the emissive core. 19. The apparatus as claimed in claim 1, wherein the pn junction diode is biased forward. 20. The device as claimed in claim 1, wherein the emission nuclear excitation is created when the pn junction becomes forward biased. 21. The device claimed 20 in a claimed. (The potential was then forward biased across the pn junction diode cause in the pn junction diode). 22. The device as claimed in claim 20, wherein the spectral absorption of photons in the pn junction diode causes a forward bias in the pn junction diode. 23. The device as claimed in claim 10, wherein the one or more hot carriers contain one or more hot electrons. 24. The device as claimed in claim 1, wherein the pn junction diode comprises a p-type emitter region and an n-type base. 25. The device as claimed in claim 1, wherein the pn junction diode comprises a highly doped p + counting region. 26. The device as claimed in claim 29, wherein the p-type emitter region is highly doped. 27. The device as claimed in claim 1, wherein the pn junction diode comprises a highly doped n + counting region. 28. The device as claimed in claim 24, wherein the n-type base is highly doped. 29. The device required in claim 1 is selected from In, Ga, arsenic, and Sb. There, the stimulated emission nuclei are made from semiconductor material containing any one or a combination. 30. The device required in claim 1 is selected from In, Sb, Bi, and Tl. There, the stimulated emission nuclei are made from semiconductor material containing any one or a combination. 31. The device required in claim 1 was selected from mercury, Cd, and Te. There, the stimulated emission nuclei are made from semiconductor material containing any one or a combination. 32. A device claimed a claim in 31. (There is a concentration of cadmium (Cd) between 20% and 30%). 33. The device as claimed in claim 1, wherein the junction point diode a to the catalyzing collector of minority carrier m distances the pn junction diode from less than 3 times per pn junction diffusion length of pn. 34. The catalytic collector further comprises a catalyst. (The entire route traveled by energetic carriers between the catalyst surface exposed to the adsorbent reactant and the semiconductor of the excited emission nucleus). The device required in claim 1 is the total energy analysis of energetic carriers along the path of mean free path.
It is less than 3 times. 35. The device as claimed in claim 1, wherein ballistic carrier transport is used to transport energetic carriers in the catalytic collector and the excited emission nuclei. 36. The device as claimed in claim 1, wherein the device further comprises an ohmic electrical connection connecting the catalytic collector and the excited emission nucleus. 37. The device as claimed in claim 1, wherein the device further comprises a tunneling Schottky junction connecting the catalytic collector and the emission core. 38. The apparatus as claimed in claim 34, wherein the catalyst comprises one or more catalyst clusters. 39. The apparatus as claimed in claim 38, wherein the catalyst further comprises one or more reaction accelerator moderators surrounding the one or more catalyst clusters. 40. The apparatus as claimed in claim 39, wherein the one or more reaction accelerator moderators comprises an oxide. 41. The equipment required in claim 40 is selected from titanium, cerium, rare earth metals, tin, lead, and aluminum. There, the oxide contains one. 42. The apparatus as claimed in claim 40, wherein the oxide comprises a catalytic material. 43. The apparatus as claimed in claim 38, wherein the catalyst further comprises one or more reaction accelerator moderators adjacent to the one or more catalyst clusters. 44. The apparatus as claimed in claim 38, wherein the catalyst further comprises one or more reaction accelerator moderators in contact with the one or more catalyst clusters. 45. The apparatus as claimed in claim 34, wherein the catalyst does not have a Debye frequency as high as the vibrational decay frequency of at least one energy relaxation main mode of the adsorbent reactant. 46. The apparatus as claimed in claim 1, wherein the catalytic collector comprises a material having a Kelvin temperature of less than 500 degrees Debye temperature. 47. A device claimed a claiming 34 in. There, the catalyst is a material selected from any one of the gold, silver, platinum, Pd, copper, In,
Includes Iron, Nickel, An, and Missouri. 48. The apparatus as claimed in claim 34, wherein the catalyst is formed on the metal clusters. 49. The device as claimed in claim 34, wherein the catalyst is formed in a quantum confined structure. 50. The apparatus claimed in claim 1 wherein the catalytic collector further comprises at least one electrode backing metal formed between the stimulated emission nucleus and the catalyst in the catalytic collector. 51. The apparatus as claimed in claim 50, wherein the electrode backing metal forms a substrate for one or more catalysts in the catalytic collector. 52. The apparatus as claimed in claim 50, wherein the electrode backing metal forms a substrate with a catalytic collector for one or more reaction accelerator moderators. 53. The apparatus as claimed in claim 50, wherein the electrode base metal has a thickness energy analysis mean free path of less than 3 excitations through it. 54. The device as claimed in claim 50, wherein an ohmic confluence is formed between the electrode backing metal and the stimulated emission nucleus. 55. The device as claimed in claim 50, wherein a tunneling Schottky junction is formed between the electrode base metal and the stimulated emission nucleus. 56. The device as claimed in claim 50, wherein an almost ohmic confluence is formed between the electrode backing metal and the stimulated emission nucleus. 57. The device as claimed in claim 1, wherein the device further comprises an optical cavity coupling to the area of adsorbent reaction. 58. The apparatus as claimed in claim 57, wherein the optical cavity is tuned to a selected energy level transition of at least one excited band structure of the excited emission nucleus, the catalytic collector and the adsorbent material. 59. The device as claimed in claim 57, wherein the optical cavity comprises a dielectric microcavity. 60. The apparatus as Requested iClaim 57. (The optical cavity then stimulates the emission of radiation). 61. The apparatus as claimed in claim 57, wherein the optical cavity stimulates an energetic transition of the excitation band structure of the excited emission nucleus. 62. The apparatus as claimed in claim 1, wherein one forma of energy analysis includes pulsed energy analysis. 63. The apparatus as claimed in claim 62, wherein one or more forms of energy analysis comprises pulsed electrical energy. 64. The apparatus as claimed in claim 62, wherein one or more forms of energy analysis comprises energy analysis of pulsed light. 65. A method of converting the reaction energy of an adsorbent substance into power and entrapment;
The structure of one or more excitation bands of the injection tube of the adsorbent catalyst to one or more excitations surrounds the structure of the excitation-emission nucleus; the injection tube is optimized for the diode of the excitation-emission nucleus; and one of the diodes Convert the above excitation to power. 66. The method of claim 65. There, the injection tube involves forming a catalytic collector with an adsorbent catalyst with one or more quantum confinement surface structures. 67. The method of claim 65. Therein, the injection tube includes adjusting one or more optical cavities to at least the frequency of one or more excitation band structures of the adsorbent catalyst and one of the excited emission nuclei. 68. The thickness of the counting zone between the surface of the catalytic collector and the excited emission nucleus where the hot carrier pathway is exposed to the adsorbent reactant exchanged between the catalytic collector and the excited emission nucleus. 66. The method of claim 65, which means that a count zone having an energy analysis thickness less than 3, releases. There, the injection tube includes forming a catalytic collector with the adsorbent catalyst, and the optimization includes suppressing. 69. The method of claim 65, wherein the optimization comprises selecting the substrate at which point the gap energy analysis is bound. Selected more excitation in adsorbent catalyst. 70. The method of claim 65. (The optimization involves tuning the forward bias of the diode so that the band of excitation energy in the excited emission nucleus matches the band of excitation energy in the adsorbent catalyst). 71. The method of claim 65. There, the injection tube includes selecting a catalyst with a Debye frequency lower than a selected energy level of one or more excited structures of the adsorbent catalyst system. 72. A method of converting reaction energy into power and inclusive: Convert one or more adsorbent reactants into hot carriers; Keep the hot carriers hot while they are transported to the diode; Converting hot carriers to forward bias with a diode. 73. The method of claim 72. (The method is there :) Converting hot carriers into minority carriers; Carrying minority carriers to the pn junction counting range of the diode; and generating a forward bias to generate power. 74. The method of claim 73. There, power includes electrical. 75. The method of claim 72. (The method is further there :) Forming population inversion with hot carriers in the diode
And extracting the energy analysis of light. 76. The method of claim 75. There, the extraction includes extracting the laser action. 77. The method of claim 75. There, the extraction involves extracting the super bright emission. 78. The method of claim 72. (The method is further there :) The state of the catalytic collector material to match the selected range of energy analysis transitions of one or more excitation zone structures of the adsorbent catalyst system while having the adsorbent reactant Changing one or more electron densities of. 79. The method of claim 78. There, the modification involves forming one or more catalytic monolayers. 80. The method of claim 76. There, modification involves forming one or more ordered electron-reflecting structures on the surface exposed to the adsorbent reactant. 81. The method of claim 78. There, modification involves forming a reflex structure of one or more ordered holes in the surface exposed to the adsorbent reactant. 82. The method of claim 78. There, modifications include forming one or more hot electron Fabry-perot modes of a thin film electron interferometer. 83. The method of claim 78. There, the modification involves forming one or more catalytic monolayers. 84. The method of claim 78. There, the modification involves forming from 1 to 100 catalyst monolayers. 85. The method of claim 78. There, the modification involves forming one or more integer catalyst monolayers. 86. The method as recited in claim 78 causing a number of electron path reflections. (Where changes include forming one or more electronic interferometer structures). 87. The method of claim 72. There, the method is 1
It further comprises adding one or more consumable additives. 88. The method of claim 87. There, additives that may be consumed include one or more catalytic materials. 89. The method of claim 87. There, the additives that may be consumed include one or more reaction accelerator moderator materials. 90. The method of claim 72. (Because there is a partial pressure on the one or more adsorbent reactants, it forms less than one monolayer for each one or more adsorbent reactants). 91. The method of claim 90. (The partial pressure is then less than 10 atmospheres). 92. The method of claim 72. (At least one of the adsorbent reactants is then a gas). 93. The method of claim 72. There, one or more adsorbent reactants include one or more moderator materials. 94. The method of claim 72. There, one or more adsorbent reactants include one or more accelerator materials. 95. The method of claim 72. There, one or more adsorbent reactants include one or more hydrocarbon chains. 96. The method of claim 72, further comprising: Cooling the diode with the heat of vaporization of one or more adsorbent reactants. 97. The method of claim 72, further comprising: clearing one or more adsorbent reactants from the catalyst by reaction. 98. A reversible solid-state surface-catalyzed excitation-transfer reactor encapsulation: a catalytic collector; and an excited-emission nucleus, the excitation of which surrounds the structure, associated with an associated excitation-band structure with the catalytic collector. Where one or more energy analyzes occur in the reaction of the adsorbed material occurring in the associated catalytic collector, where the emitted nuclear excitation occurs and is converted into one or more forms of energy analysis. Converted to excitation and transported to excited emission nuclei; and at what point the energy analysis was applied to the excited emission nuclei, emission nuclei excitation, transported emissive nuclei excitation excited,
Create an emission nuclear excitation that is transported to the adsorbent at the catalytic collector where it energizes the excitation that causes the reaction stimulus at the catalytic collector; 99. The apparatus as claimed in claim 98, wherein the energy analysis applied to the excited emission nuclei is pulsed power. 100. The apparatus as claimed in claim 98, wherein the reactive stimulus generates hot carriers. 101. The apparatus of claim 100, wherein the hot carrier further stimulates an additional response. 102. Excitatory reaction, method of encapsulation; edible hot carriers in excited emission nuclei, excited emission nuclei by applying power to a diode of the excited emission nuclei in contact with a catalytic collector; diodes. Transports the hot carriers that occur in the catalytic collector having the catalytic material at; while they are transported to the surface of the catalytic collector, the surface whose presence is exposed to the reactants, the hot and catalytic material Manipulating the thickness properties of such hot carrier remaining. 103. The method of claim 102. (The power pulse is then applied to advance the diode diagonally). 104. The method of claim 102. There, the applied power with a duration shorter than the lifetime of the longest delivered excited state of the hot carrier comprises a power pulse. 105. The method of claim 102. There, the applied power includes a power pulse with a duration less than the lifetime of Polariton. 106. The method of claim 102. There, the applied power comprises one nanosecond power pulse according to duration. 107. The method of claim 102. Where the applied power is 1 /
Includes power pulses with a duty cycle less than 2. 108. The method of claim 102. There, the applied power with a repetition time comparable to or less than the average time during which which reactant of the gas can replenish the surface of the exhausted reactant causes a power pulse. Including. 109. The method of claim 102. There, the applied power comprises power pulses with repetition rates higher than 50 MHz. 110. The method of claim 102. (The reactants have such that at partial pressure no more than one monolayer forms for each reactant on the surface of the material of the catalyst). 111. The method of claim 102. (At least one of the reactants is a gas in it). 112. The method of claim 102. (The method is further there :) While having a reactant, one or more electron densities of the catalytic collector are adsorbed to the selected range of energy analysis transitions of one or more excitation band structures of the catalytic system. To change. 113. The method of claim 112. There, modification involves forming a monolayera of one or more catalysts. 114. The method of claim 112. There, the modification involves forming one or more ordered electron-reflecting structures on the surface exposed to the reactants. 115. The method of claim 112. There, modification involves the formation of one or more ordered holes in which the reflective structure of the surface is exposed to the reactants. 116. The method of claim 112. There, the modification involves forming one or more hot electron Fabry-Perot modes of the thin film electron interferometer. 117. The method of claim 112. There, the modification involves forming one or more catalytic metal monolayers. 118. The method of claim 112. There, the modification involves forming from 1 to 100 catalytic metal monolayers. 119. The method of claim 112. There, the modification involves forming one or more integer catalytic metal monoatomic layers. 120. The method of claim 112 causing many electron path reflections.
(Where changes include forming one or more electronic interferometer structures). 121. The method of claim 101. There, the method further comprises adding to the reactants one or more consumable additives. 122. The method of claim 121. Where the additives that can be consumed are
Contains one or more catalytic materials. 123. The method of claim 121. Where the additives that can be consumed are
Includes one or more reaction promoter materials. 124. The method of claim 121. Where the additives that can be consumed are
Includes one or more reaction moderator materials. 125. The method of claim 102. There, the reactants include hydrocarbon chains. 126. The method of claim 102. (The reactant deposits on it one or more compounds on the catalytic collector). 127. The method of claim 102. There, the reactants contain one or more compounds that form the catalytic collector. 128. The method of claim 102. (The reaction thus stimulated a surface explosion due to hot carriers). 129. The method of claim 102. (The reaction thus stimulated an autocatalyzed chain reaction due to hot carrier causes). 130. The method of claim 102, further comprising cooling the diode with heat of vaporization of the reactants. 131. Solid state surface catalyzed excitation transfer reactor encapsulation: a catalytic collector; and a catalyst whose excitation band structure is applied to excited emission nuclei to produce one or more emission nuclei excitations Excited emission nuclei coupled with the associated excitation band structure together with the action collector, emission nuclei excitation is a stimulating reaction transported emissive nuclei excitation in the catalyzed collector conducts excitation in the catalyzed collector The reactants that are transported to the excitation. 132. The device as claimed in claim 131, wherein the emitted nuclear excitation comprises minority carriers. 133. The apparatus of claim 131, wherein the emitted nuclear excitation comprises hot carriers. 134. Solid state surface catalyzed excitation transfer reactor encapsulation: a catalytic collector; and an excited band structure of the adsorbed material occurring at the associated catalytic collector where the emission nuclear excitation occurs Is 1 or more pulse of excitation in the reaction 1,
Excited emission that is converted to more secondary excitation and combined with the associated excitation band structure along with the catalytic collector that is transported to the excited emission nucleus and converted to one or more forms of energy analysis Nuclear. 135. The apparatus of claim 134. There, the reactants include gaseous reactants. 136. The apparatus of claim 134. There, the pulse of excitation includes the excited reactant molecular vibrations. 137. The apparatus of claim 134. There, the reaction of the adsorbed material takes place on the surface of the catalytic collector. 138. The apparatus of claim 134. (The reaction of the adsorbed material takes place therewith with the surface of the catalytic collector). 139. The apparatus of claim 134. There, the emitted nuclear excitation comprises hot carriers. 140. The apparatus of claim 134. There, the emitted nuclear excitation contains minority carriers. 141. The apparatus of claim 140. There, one or more second excitations contain hot carriers. 142. The apparatus as claimed in claim 1, wherein the emitted nuclear excitation comprises an energy analysis carried by a resonant tunnel. 143. The apparatus, catalyst material, as claimed in claim 1, being exactly the same
And pn junction diode electrodes. There, the catalytic collector further comprises the catalyst. 144. The method according to claim 70, wherein the point at which the hot carrier is the electron and excitation band of the emission nucleus is its conduction band. 145. The method according to claim 70, wherein the point at which the hot carrier is the hole and the excitation band of the emission nucleus is its valence band. 146. The method of claim 72. (The method is further there :) Modifying the electron density of one or more of the states of the material of the catalytic collector to match the selected excitation band structure of the adsorbent catalyst system while having the adsorbent reactant . 147. The method in which claim 78 causes the reflection of many holes. (Where changes include forming one or more electronic interferometer structures). 148. Excitatory reaction, method of encapsulation: Applying power to a diode of an excited emission nucleus, the excited emission nucleus is contacted and applied to a catalytic collector; Creation hot in the excited emission nucleus Carrier; injection of hot carriers into the collector's excitation band structure for catalysis by using resonance tunnels; tube excitation energy; resonance tunnel of excitation energy is at least competitive, excited emission nuclei and catalysis rated by 3% of energy loss To experience the speed of energy transfer between collectors of
Suppressing the thickness property of the material of the injection tube of the catalytic collector. 149. The method of claim 148, at which point in the catalytic collector.
a suppression of thickness properties to less than 200 nanometers (nm) due to the material of the injection tube conducting. 150. The method of claim 148, at which point in the catalytic collector.
a Suppression that the thickness property suppresses the thickness to less than 100,000 nanometers (nm) due to the material of the non-conductive injection tube.