JP2003505807A - Rewritable optical recording device in which output of semiconductor laser is controlled - Google Patents
Rewritable optical recording device in which output of semiconductor laser is controlledInfo
- Publication number
- JP2003505807A JP2003505807A JP2001511674A JP2001511674A JP2003505807A JP 2003505807 A JP2003505807 A JP 2003505807A JP 2001511674 A JP2001511674 A JP 2001511674A JP 2001511674 A JP2001511674 A JP 2001511674A JP 2003505807 A JP2003505807 A JP 2003505807A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- output
- state
- optical recording
- recording device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
- G11B7/1263—Power control during transducing, e.g. by monitoring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00454—Recording involving phase-change effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/006—Overwriting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B2220/00—Record carriers by type
- G11B2220/20—Disc-shaped record carriers
- G11B2220/21—Disc-shaped record carriers characterised in that the disc is of read-only, rewritable, or recordable type
- G11B2220/215—Recordable discs
- G11B2220/216—Rewritable discs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B2220/00—Record carriers by type
- G11B2220/20—Disc-shaped record carriers
- G11B2220/25—Disc-shaped record carriers characterised in that the disc is based on a specific recording technology
- G11B2220/2537—Optical discs
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Recording Or Reproduction (AREA)
- Optical Head (AREA)
Abstract
(57)【要約】 本発明は、情報内容に応じて2つの異なる状態を再書込み可能な媒体上に発生させ、再書込み可能な媒体上に光学的に記録する電子装置に関する。本発明では、状態を書込む際に、2つの状態の内の1つの状態のみの反射率が測定され、その半導体レーザの出力を制御する測定値はもう1つの状態を書込む際にも使用される。 (57) [Summary] The present invention relates to an electronic device that generates two different states on a rewritable medium according to information content and optically records the information on the rewritable medium. According to the present invention, when writing a state, the reflectivity of only one of the two states is measured, and the measurement value for controlling the output of the semiconductor laser is also used for writing the other state. Is done.
Description
【0001】
本発明は、情報内容に依存して2つの異なる状態を再書込み可能な媒体上に発
生させ、再書込み可能な媒体上に記録する光学記録装置に関する。The present invention relates to an optical recording device for generating two different states on a rewritable medium and recording on the rewritable medium, depending on the information content.
【0002】
光学媒体に書込むためには、例えば、半導体レーザが媒体をスポット毎に加熱
するよう使用される。光学媒体の素材層がその融点を超えて加熱されると、素材
層の素材はスポット毎に融解する。エネルギーが更に供給されなければ、情報担
体素材は高速で冷却し、溶解状態から非晶質状態に変わる。情報担体素材を或る
時間の間溶解温度の下ではあるがこの素材に固有の結晶化温度の上に保つエネル
ギーの供給によって、情報担体素材は結晶状態に変わる。結晶状態の情報担体層
の反射特徴と、非晶質状態の情報担体層の反射特徴はかなり異なるので、記憶さ
れたデータは反射光の量の評価によって再び読み出される。To write on optical media, for example, semiconductor lasers are used to heat the media spot by spot. When the material layer of the optical medium is heated above its melting point, the material of the material layer melts spot by spot. If no further energy is supplied, the information carrier material cools rapidly and changes from the molten state to the amorphous state. The supply of energy, which keeps the information carrier material for some time under the melting temperature but above the crystallization temperature inherent in this material, transforms the information carrier material into the crystalline state. Since the reflection characteristics of the information carrier layer in the crystalline state and the reflection characteristics of the information carrier layer in the amorphous state are quite different, the stored data is read out again by an evaluation of the amount of reflected light.
【0003】
書込み動作において情報担体層の位相状態は或る期間の間に或る領域に与えら
れたエネルギーによって決められるが、光学記憶媒体上の例えば指紋や塵粒子の
ような汚れが素材に与えられたエネルギーを吸収してしまうので、上述のような
半導体レーザによって発生された出力の制御は十分ではない。半導体レーザによ
って与えられたエネルギーが汚れにより小さすぎると、情報担体層上のエネルギ
ーが与えられたスポットは、結晶状態となる代わりに非晶質状態になる場合があ
り、これはレーザが投射されて得られる効果の反対である。汚れに対する補償の
エネルギーが高くなるよう選択されると、汚れのないスポットに与えられるエネ
ルギーが高くなりすぎ、情報担体素材が望ましくなく結晶状態に変わる場合があ
る。これは、書込まれるべき情報に対応しない情報が書込まれるという事実をも
たらす。In a writing operation, the phase state of the information carrier layer is determined by the energy applied to a region during a period of time, but the material is contaminated by stains such as fingerprints or dust particles on the optical storage medium. Since the absorbed energy is absorbed, the control of the output generated by the semiconductor laser as described above is not sufficient. If the energy provided by the semiconductor laser is too small due to contamination, the energized spots on the information carrier layer may be in an amorphous state instead of being in a crystalline state, which can be affected by the laser projection. The opposite of the effect obtained. If the energy of the compensation for dirt is chosen to be too high, the energy provided to the dirt-free spot will be too high and the information carrier material may undesirably turn into a crystalline state. This results in the fact that information is written that does not correspond to the information that should be written.
【0004】
書込み動作を制御するためには、書込み動作を妨害するものを認識し、それら
を補償するよう書込まれた状態が書込み動作の間に読み出されることが好適であ
る。In order to control the write operation, it is preferred that the states programmed to recognize and compensate for those disturbing the write operation are read during the write operation.
【0005】
書込みに使用される光線の量が反射光の変更によって制御される光学記録装置
が、日本国特許第5292672号から公知である。反射光はサンプルアンドホ
ールド回路によってバッファされ、基準値と比較される。測定値と基準値の間の
差が、半導体レーザによって放射され書込みに使用される光線の量を制御するよ
う使用される。An optical recording device in which the amount of light rays used for writing is controlled by changing the reflected light is known from Japanese Patent No. 5292672. The reflected light is buffered by the sample and hold circuit and compared with the reference value. The difference between the measured value and the reference value is used to control the amount of light emitted by the semiconductor laser and used for writing.
【0006】
本発明は、書込みに使用される半導体レーザの出力を制御し、従って再書込み
可能な媒体に好適である光学記録装置を提供することを目的とする。It is an object of the present invention to provide an optical recording device which controls the power of a semiconductor laser used for writing and is therefore suitable for rewritable media.
【0007】
この目的は、状態を書込む間に、上記状態のうちの1つの状態のみで反射率が
測定され、その測定された値がもう1つの状態が書込まれる場合でも半導体レー
ザの出力を制御するよう使用されることによって達成される。[0007] The purpose is to measure the reflectivity in only one of the above states while writing a state and to output the output of the semiconductor laser even if the measured value is written in another state. Is achieved by being used to control.
【0008】
高反射(即ち結晶)状態が書込まれる時に、光線の反射した量は信号ピーク検
出器によって測定され、基準値と比較されることが好適である。例えば記憶媒体
の表面上にある汚れによって偏りがある場合に、半導体レーザの出力は適宜再調
節される。このような方法によって決められた再調整ファクタは、低反射(即ち
非晶質)状態が書込まれる時の為に保持される。ここでは、本発明は書込み動作
に影響を与えている汚れが表面を広く覆っているものとする。低反射状態での書
込みにおける個々の再調節は従って必要でなくなる。チャネルコーディングによ
って、各状態は限られた回数のみ繰り返されることが保証される。これにより、
高反射状態はあまり離れていないこと及び書込まれるべき高反射状態の間の距離
は汚れの範囲よりも全体的に小さいことが保証される。When the highly reflective (ie crystalline) state is written, the reflected amount of light is preferably measured by a signal peak detector and compared to a reference value. The output of the semiconductor laser is readjusted as appropriate, for example, when there is a deviation due to dirt on the surface of the storage medium. The readjustment factor determined by such a method is retained for when the low reflection (ie, amorphous) state is written. In the present invention, it is assumed that the surface of the present invention is widely covered with dirt that affects the writing operation. Individual readjustments in writing in the low reflection state are therefore not necessary. Channel coding ensures that each state is repeated a limited number of times. This allows
It is guaranteed that the highly reflective states are not too far apart and that the distance between the highly reflective states to be written is generally less than the extent of the stain.
【0009】
反射率の測定は、既に高反射状態にあり高い反射状態で上書きされる部分のス
ポットにおいて行なわれることが好適である。It is preferable that the measurement of the reflectance is performed at a spot in a portion which is already in the high reflection state and is overwritten in the high reflection state.
【0010】 本発明を図1に示される実施例に基づいてより詳細に説明する。[0010] The invention will be described in more detail on the basis of the embodiment shown in FIG.
【0011】
図1に示される実施例は、半導体レーザ2の光学媒体3上への書込み動作を制
御する本発明の制御回路1を有する光学記録装置である。例えばCD−ROMの
ような光学媒体3はモータ4によって駆動される。制御回路5内では、或る書込
みストラテジを達成するためにそれぞれ必要な半導体レーザ2の出力が決められ
、制御回路1の目標値Pxとして予め決められる。フォトダイオード(図示せず
)によって、記憶媒体は書込まれた位置と同じ位置で読出しされる。読出し信号
はピーク値検出器6に供給され、検出器は読出し信号Mを発生させる。この読出
し信号Mは基準信号Mrefと比較され、偏差信号は制御ネットワーク13を介
し乗算段階11の入力に供給される。制御回路1の時間に依存する制御挙動は制
御ネットワーク13によって決められる。The embodiment shown in FIG. 1 is an optical recording apparatus having a control circuit 1 of the present invention for controlling a writing operation of a semiconductor laser 2 onto an optical medium 3. An optical medium 3 such as a CD-ROM is driven by a motor 4. In the control circuit 5, the output of the semiconductor laser 2 required to achieve a certain writing strategy is determined and is predetermined as the target value Px of the control circuit 1. The storage medium is read by the photodiode (not shown) at the same position as the written position. The read signal is supplied to the peak value detector 6, which produces a read signal M. This read-out signal M is compared with the reference signal Mref and the deviation signal is fed via the control network 13 to the input of the multiplication stage 11. The time-dependent control behavior of the control circuit 1 is determined by the control network 13.
【0012】
乗算段階11のもう1つの入力には公称出力値Pxが供給される。乗算段階1
1の出力は加算回路12の第1の入力に供給される。半導体レーザの動作点を設
定するよう、加算段12の他の入力にはオフセット電圧が供給される。反射光の
量が変更すると、或る状態又はその他の状態が書込まれる際に記録媒体3上にで
きるだけ一定な出力を供給できるよう制御回路の利得ファクタが適宜調節される
。The other input of the multiplication stage 11 is supplied with the nominal output value Px. Multiplication stage 1
The output of 1 is supplied to the first input of the adder circuit 12. An offset voltage is supplied to the other input of the addition stage 12 so as to set the operating point of the semiconductor laser. When the amount of reflected light changes, the gain factor of the control circuit is adjusted accordingly to provide as constant an output on the recording medium 3 as a state or other states are written.
【図1】 本発明の光学記録装置を示す図である。[Figure 1] It is a figure which shows the optical recording device of this invention.
───────────────────────────────────────────────────── フロントページの続き (81)指定国 EP(AT,BE,CH,CY, DE,DK,ES,FI,FR,GB,GR,IE,I T,LU,MC,NL,PT,SE),OA(BF,BJ ,CF,CG,CI,CM,GA,GN,GW,ML, MR,NE,SN,TD,TG),AP(GH,GM,K E,LS,MW,MZ,SD,SL,SZ,TZ,UG ,ZW),EA(AM,AZ,BY,KG,KZ,MD, RU,TJ,TM),AE,AG,AL,AM,AT, AU,AZ,BA,BB,BG,BR,BY,CA,C H,CN,CR,CU,CZ,DE,DK,DM,DZ ,EE,ES,FI,GB,GD,GE,GH,GM, HR,HU,ID,IL,IN,IS,JP,KE,K G,KP,KR,KZ,LC,LK,LR,LS,LT ,LU,LV,MA,MD,MG,MK,MN,MW, MX,NO,NZ,PL,PT,RO,RU,SD,S E,SG,SI,SK,SL,TJ,TM,TR,TT ,TZ,UA,UG,US,UZ,VN,YU,ZA, ZW (72)発明者 ファン デン エンデン,ヘイスベルト イェー オランダ国,5656 アーアー アインドー フェン,プロフ・ホルストラーン 6 Fターム(参考) 5D090 BB05 CC01 CC05 CC18 DD03 EE01 FF37 JJ16 JJ20 KK03─────────────────────────────────────────────────── ─── Continued front page (81) Designated countries EP (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, I T, LU, MC, NL, PT, SE), OA (BF, BJ , CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG), AP (GH, GM, K E, LS, MW, MZ, SD, SL, SZ, TZ, UG , ZW), EA (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM), AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, C H, CN, CR, CU, CZ, DE, DK, DM, DZ , EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, K G, KP, KR, KZ, LC, LK, LR, LS, LT , LU, LV, MA, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, S E, SG, SI, SK, SL, TJ, TM, TR, TT , TZ, UA, UG, US, UZ, VN, YU, ZA, ZW (72) Inventor van den Enden, Heisbert Yeah Netherlands, 5656 Earth Ardine Fen, Plov Holstran 6 F-term (reference) 5D090 BB05 CC01 CC05 CC18 DD03 EE01 FF37 JJ16 JJ20 KK03
Claims (2)
上に発生させ、再書込み可能な媒体上に光学的に記録する電子光学記録装置であ
って、 上記状態の書込みの際に、上記状態の内の1つの状態のみで反射率が測定され
、 上記測定された値はもう一方の状態が書込まれる場合でも半導体レーザの出力
を制御するよう使用されることを特徴とする電子装置。1. An electro-optical recording device for generating two different states on a rewritable medium and optically recording on the rewritable medium depending on information content. In this case, the reflectance is measured in only one of the above states, and the measured value is used to control the output of the semiconductor laser even when the other state is written. And electronic device.
書きされる部分のスポットにおいて行なわれることを特徴とする請求項1記載の
電子装置。2. The electronic device according to claim 1, wherein the reflectance is measured at a spot in a portion which is already in a high reflection state and is overwritten in the high reflection state.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19932658A DE19932658A1 (en) | 1999-07-15 | 1999-07-15 | Laser diode control in rewritable optical recording devices |
DE19932658.4 | 1999-07-15 | ||
PCT/EP2000/006548 WO2001006499A1 (en) | 1999-07-15 | 2000-07-10 | Laser diode control in rewritable optical recording devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003505807A true JP2003505807A (en) | 2003-02-12 |
Family
ID=7914580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001511674A Withdrawn JP2003505807A (en) | 1999-07-15 | 2000-07-10 | Rewritable optical recording device in which output of semiconductor laser is controlled |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP1114416A1 (en) |
JP (1) | JP2003505807A (en) |
KR (1) | KR100752637B1 (en) |
CN (1) | CN1154094C (en) |
AU (1) | AU5984000A (en) |
CA (1) | CA2344069A1 (en) |
DE (1) | DE19932658A1 (en) |
HU (1) | HUP0103926A3 (en) |
PL (1) | PL346652A1 (en) |
WO (1) | WO2001006499A1 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05282672A (en) | 1990-05-18 | 1993-10-29 | Taiyo Yuden Co Ltd | Optical information recording device |
GB9026774D0 (en) | 1990-12-10 | 1991-01-30 | Plasmon Data Systems Inc | Improving optical disk recording performance |
US5184343A (en) | 1991-05-06 | 1993-02-02 | Johann Donald F | Compensation for dust on an optical disk by increasing laser writing power |
JPH1040548A (en) * | 1996-07-26 | 1998-02-13 | Taiyo Yuden Co Ltd | Running opc method for optical disk and optical disk recording/reproducing apparatus |
WO1998033177A2 (en) * | 1997-01-29 | 1998-07-30 | Koninklijke Philips Electronics N.V. | A method and a device for recording and/or reproducing information |
-
1999
- 1999-07-15 DE DE19932658A patent/DE19932658A1/en not_active Withdrawn
-
2000
- 2000-07-10 CN CNB008014035A patent/CN1154094C/en not_active Expired - Fee Related
- 2000-07-10 PL PL00346652A patent/PL346652A1/en not_active Application Discontinuation
- 2000-07-10 HU HU0103926A patent/HUP0103926A3/en unknown
- 2000-07-10 KR KR1020017003218A patent/KR100752637B1/en not_active IP Right Cessation
- 2000-07-10 CA CA002344069A patent/CA2344069A1/en not_active Abandoned
- 2000-07-10 AU AU59840/00A patent/AU5984000A/en not_active Abandoned
- 2000-07-10 JP JP2001511674A patent/JP2003505807A/en not_active Withdrawn
- 2000-07-10 WO PCT/EP2000/006548 patent/WO2001006499A1/en active Application Filing
- 2000-07-10 EP EP00945904A patent/EP1114416A1/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CN1154094C (en) | 2004-06-16 |
EP1114416A1 (en) | 2001-07-11 |
CA2344069A1 (en) | 2001-01-25 |
WO2001006499A1 (en) | 2001-01-25 |
KR100752637B1 (en) | 2007-08-29 |
KR20010075072A (en) | 2001-08-09 |
AU5984000A (en) | 2001-02-05 |
PL346652A1 (en) | 2002-02-25 |
HUP0103926A2 (en) | 2002-03-28 |
DE19932658A1 (en) | 2001-01-18 |
CN1318193A (en) | 2001-10-17 |
HUP0103926A3 (en) | 2004-01-28 |
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