JP2003342736A - Thin film deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a product to be film-deposited of high quality such as an electrophotographic photoreceptor for reducing or eliminating the degree of flying of a deposited film peeled from a gas supply part to a base body to be film-deposited during the film deposition. <P>SOLUTION: In a HW-CVD apparatus 33, a planar heating body 37 is erected in a reaction chamber 34, a gas supply part 39 to supply the gas to the heating body is provided, a base body 36 to be film-deposited is disposed on both sides of the heating body 37, a base body temperature setting means is provided to control a temperature of the base body 36 to be film-deposited, and a film is deposited on the base body 36 to be film-deposited by a hot wire CVD method. <P>COPYRIGHT: (C)2004,JPO

Description

Description: BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a hot wire CV.
A method such as amorphous
Hot wire CVD equipment for forming silicon-based thin films
(Hereinafter, a hot wire CVD device is referred to as an HW-CVD device.)
Abbreviation). 2. Description of the Related Art Conventionally, amorphous silicon (hereinafter referred to as
Morphous silicon is abbreviated as a-Si)
Used electrophotographic photoreceptor, solar cell, image sensor, light
Sensors, TFTs (thin film transistors), etc.
Widespread use of film deposition equipment using glow discharge plasma CVD
Has been used. In this film forming apparatus, an electronic photograph made of a-Si
To manufacture a true photosensitive drum, a glow as shown in FIG.
A discharge plasma CVD device 1 is used. FIG. 1 shows a glow discharge plasma CVD apparatus 1.
FIG. 2 is a schematic configuration diagram, in which reference numeral 2 denotes a cylindrical vacuum vessel.
Almost in the center of the vacuum vessel 2
A cylindrical conductive substrate 4 made of a material such as
A-Si based film on glow discharge plasma
This is a technique for forming a film. [0005] The conductive substrate 4 is made of SUS provided therein.
A conductive substrate held by a substrate support 3 made of
4 as a ground electrode and the other high-frequency power application electrode
From the SUS etc. which is enclosed so as to be equidistant with this outer peripheral surface
A cylindrical metal electrode 5 is disposed. A source gas for film formation is introduced into the metal electrode 5.
The gas introduction pipe 6 is connected to the inner periphery of the metal electrode 5.
From the gas blowing holes 7 provided on the surface to the conductive substrate 4
A raw material gas is introduced between the two electrodes for the purpose. Above and below the metal electrode 5, insulation is provided between the metal electrode 5 and the ground.
Insulating rings 8, 8 'made of ceramics,
Between the metal electrode 5 and the conductive substrate 4.
A power supply 9 is connected and the conductive substrate 4
Glow discharge plasma is generated between the
It is made up. [0008] Such glow discharge plasma is generated.
In this case, a nichrome wire or a car
A substrate heating means 10 such as a cartridge heater is provided.
Then, the conductive substrate 4 is set to a desired temperature. In addition,
The body support 3 and the conductive base 4 are connected to a motor 11 for rotation.
Therefore, they are integrally rotated via the rotation transmitting means 12,
Thereby, the film thickness and film quality are made uniform. A glow discharge plasma CVD apparatus having the above structure
In forming an a-Si-based film using No. 1
The raw material gas set at the flow rate and gas ratio of
When introduced between the two electrodes through
And an exhaust pipe 13 connected to a vacuum pump (not shown).
By adjusting the exhaust volume from
Set and apply high frequency power from high frequency power supply 9
To generate glow discharge plasma between both electrodes
The gas is decomposed, and the conductive substrate 4 is set at a desired temperature.
An a-Si based film is formed. However, the above glow discharge plasma
According to the CVD method, the surface of the a-Si-based
Improve film properties and stack
There is a problem that there is a limit in controlling the interface properties of the film.
Was. Further, for each glow discharge plasma CVD apparatus 1
Requires expensive high-frequency power supply for glow discharge plasma generation
As a result, the manufacturing cost has increased. Even higher
As the glow discharge plasma is generated by the frequency,
Some leak as high-frequency noise to various parts of the deposition system or to the outside
And various controllers for gas flow rate, gas pressure and substrate temperature
There was also a problem of causing malfunctions to the container. [0012] In addition, as a decomposition product by plasma
As a by-product during the formation of the a-Si film, yellow flammable
A large amount of conductive powder is generated, other than the conductive substrate 4 in the vacuum vessel
Parts, that is, electrodes, inner walls of containers, exhaust piping systems, etc.
The powder adheres and deposits on the surface of the conductive substrate 4 during film formation.
It flew off, causing a film formation defect. And
Powder cleaning work in the reactor is required for each film deposition and handling
It was dangerous. [0013] These problems have been solved and the characteristics of a-Si based films have been improved.
Patent No. 1704110 for the purpose of improving the performance
No. 3145536 and the hot wire
(HW-CVD method (this hot wire CVD method is a catalyst
CVD method or Cat-CVD method)
Various film forming methods and apparatuses have been proposed. This HW-CVD apparatus is the same as the apparatus shown in FIG.
A description will be given based on a schematic diagram. Reaction chamber 1 consisting of a vacuum vessel
4, a substrate 16 for film formation is placed on the substrate holding table 15.
Hold it and place it on the top of the base 16 at appropriate intervals.
A heating element 17 made of stainless steel or the like is arranged,
The raw material gas can be supplied onto the base 16 through the body 17.
Thus, the gas introduction pipe 18 is arranged. 19 is for exhaust
A vacuum pump 20 is used for heating the substrate.
It is a tar. Using this HW-CVD apparatus, an a-Si type
In order to form a film, the film is evacuated by a vacuum pump 19 to a vacuum state.
SiH in the reaction chamber 14 _Four And H _Two Mixed gas
Raw material gas is introduced from the gas introduction pipe 18 and 1000
Through the heating element 17 heated to ~ 2000 ° C
Initiate a reaction and decompose the product
The object is allowed to reach the base 16 and an a-Si based film is deposited.
You. Further, according to Japanese Patent No. 2692226, the invention
Opening through which gas can pass between the heating element and the substrate for film formation
A radiation heat insulating member having
Technology has been proposed to prevent substrate temperature rise due to
ing. In connection with the above HW-CVD apparatus,
JP-A-2000-277501 and JP-A-2000-277501
No. -277502 describes the non-existence of heavy metals and the like contained in the heating element.
A technology has been proposed to prevent pure substances from entering the film.
I have. Further, Japanese Patent Application Laid-Open No. 2001-345280 describes
Is H _Two Such as material gas is activated by decomposition by the heating element
Active space where active species are generated by _Four What
Which source gas is on the substrate by chemical reaction with this active species
Isolate the deposition processing space where the film is deposited on the same vacuum vessel
The high melting point metal used in the heating element
For example, tungsten wire is SiH _Four Reacts with silicon
Compound formation, resulting in heating element degradation
Techniques for preventing such problems have been proposed. Japanese Patent Application Laid-Open No. 2002-93723 discloses that
Cover the support at the end of the heating element with a cover.
Heat, inert gas, etc. to reduce the temperature drop at the end of the heating element.
By separating from the source gas, the silicon compound
Techniques for preventing generation have been proposed. According to such an HW-CVD method, a film is formed.
Plasma no longer damages the reaction,
Excellent film characteristics are obtained, and the interface characteristics of the laminated film are also good.
Hydrogen in the a-Si: H film containing hydrogen
The content can be reduced, whereby the optical properties of the a-Si: H film can be reduced.
Dynamic band gap is reduced, and as a result
The photoelectric conversion efficiency has been improved,
Photo-deterioration is improved, and carrier mobility in TFT is improved.
Be improved. Next, Japanese Patent No. 3145536 proposes
The outline of the HW-CVD apparatus will be described with reference to FIGS.
You. FIG. 8 schematically shows the HW-CVD apparatus 21.
FIG. 9 is a front view, and FIG.
You. According to the HW-CVD apparatus 21, a vacuum
In the center of the reaction chamber 27 formed of a container, a gas blowing unit 2 is provided.
3 is provided, and the gas passes through the gas blowing holes 24.
After contacting the heating element 25 to decompose and activate it,
Is formed on the base 22 for use. Each substrate 22 for film formation is individually
Protruding portion 23, supports arranged linearly in parallel with heating element 25
The support 26 is provided with wheels 28.
The base temperature control means 3
0 or rotation transmission means 31 can be connected and disconnected in vacuum
It is configured to work. The outer surface of the gas blowing section 23 is covered during the film formation.
In the same manner as in the case of the film-forming substrate 22, it receives heat radiation from the heating element 25.
However, a gas for film formation is supplied to the gas blowing unit 23.
By receiving the cooling effect of the gas by being done,
Radiant heat can be effectively absorbed and dissipated.
As a result, a radiation blocking unit is provided between the heating element 25 and the substrate 22 for film formation.
There is no need to provide materials, and gas utilization efficiency improves.
You. The vacuum vessel 27 of the apparatus 21 has
The setting and taking out of the base 22 can be performed integrally.
And orthogonal to a plurality of film-forming substrates 22 arranged linearly.
On the side wall of the container 27 on the side of
Is provided. And, through this gate valve 32
By connecting a plurality of vacuum vessels 27, a vacuum chamber 27
Afterwards, evacuation or pre-heating, cooling or vacuum
There is a spare room to perform
To improve the film quality of each layer by separating
A loose in-line HW-CVD system with excellent mass productivity
Become. [0027] In recent years, a heating element
Decomposed and activated gas, that is, gas
Under normal HW-CVD conditions with little influence of heat flow
Heat is diffused almost uniformly to the heating element,
The arrival density from one point on the body to a point on the substrate is
And 1 / r for the distance r to the point on the catalyst body ^Two Proportional to
(NEDO University collaborative industry
Industry science and technology research and development project "Cat-CVD method
Semiconductor Device Manufacturing Process "Result Report, Document 20
01.6.4 P16). On the other hand, in the device 21 of Japanese Patent No. 3145536,
In this case, a plurality of film-forming substrates 22 are
The gas outlet 23 is provided symmetrically with the above.
According to the notice, it reaches one point on the gas blowing part 23
The density of the active species is determined by the activity reaching one point on the substrate for film formation.
It is almost equal to the seed density. The attainable density of active species is the film deposition amount
And therefore, according to such a configuration, the gas
On the outer periphery of the blowing portion 23, the
The same amount of a-Si film as that deposited is deposited. The result
As a result, the film thickness is increased to several tens of μm like an electrophotographic photoreceptor.
To increase the film formation time,
In the case where the gas blows out, the film
To fly over the substrate due to the gas flow,
There was a problem of generating. Defects in the film formation of the photoreceptor are found in the electrophotographic apparatus.
Not only causes a significant reduction in image quality, but also
This leads to a significant decrease in productivity. To prevent this
Requires frequent maintenance such as removal of the film in the equipment
However, frequent maintenance of the equipment is
Productivity has been reduced and production costs have increased.
Was. The thin film deposition apparatus of the present invention
Has a heating element arranged in a plane in the reaction chamber, and
A gas blowing section for supplying gas is provided,
The substrate for film formation is arranged on both sides, and the substrate for film formation is further heated.
Temperature control means for controlling the temperature,
-Forming a film on a substrate for film formation by CVD
Features. DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a thin film deposition apparatus according to the present invention will be described.
The HW-CVD apparatus will be described in detail with reference to the drawings. (Example 1) FIG. 1 is a schematic diagram of an HW-CVD apparatus 33.
FIG. 2 is a schematic front view, and FIG.
A schematic diagram is shown. 3 (1) to 3 (4) are provided in the gas blowing section.
It is a figure showing distribution of a gas hole. FIG. 10 and FIG.
The front view of a heating body is shown. Numeral 34 denotes a reaction chamber serving as a vacuum vessel.
A flat heating element 37 is set up substantially at the center of the inside of the reaction chamber 34.
Gas is blown above the heating element 37.
An extension 39 is provided. An inorganic material such as ceramic is provided above the heating element 37.
Material or Teflon (R), polyimide, viton, etc.
An insulating member 45 made of machine material is provided.
A gas blowout portion 39 is provided through the intermediary 5. Below the heating element 37, a current introduction terminal 52 is provided.
Connected to an external power supply through this terminal 52.
You. In addition, on each side of the heating element 37, five
Are arranged at substantially equal intervals.
I do. These arrangement surfaces are substantially parallel to the heating element 37. Each substrate 36 for film formation is vertically arranged.
The support body 35 provided is supported in a penetrated state,
The support 35 is integrally mounted on a trolley 43 having wheels 42.
Is done. Further, inside each support 35,
A substrate temperature setting means 35a is provided, and
The base 36 is set to a required temperature. Each support is integrally formed on a carriage 43 having wheels 42.
By installing the holding body 35, heating and
Contact for external detection, and connected to external equipment from below.
The electrode contact is raised and lowered to connect electrically,
The temperature setting means 35a is externally controlled. Or
The carriage 43 and the support 35 have a hollow structure,
The stage itself moves up and down (up and down) when moving
Is also good. As described above, the heating element is provided inside the support 35.
The substrate temperature during film formation can be controlled to a desired value even when radiant heat from 37 is received.
Temperature detection means (not shown) and heating to maintain the value
Means (not shown) and / or cooling means (not shown)
A substrate temperature control means 35a made of
As the control means 35a, a thermocouple, a thermistor, or the like is used.
To detect the temperature of the outer wall of the support 35,
Film-forming substrate 36 held on support 35 via an outer wall
While monitoring the temperature condition of the
) Controls the heating means and cooling means to reduce the substrate temperature.
Maintain the desired value. The heating means may be a nichrome wire or a sheathed heater.
ー, electric things such as cartridge heaters, oil etc.
A heating medium is used. Cooling means include air and nitrogen gas.
Gas or a cooling medium composed of water, oil, etc.
3 It is used by circulating inside. And this
The substrate temperature during film formation by the substrate temperature control means 35a is:
Constant temperature of 100 to 500 ° C, preferably 200 to 350 ° C
Controlled every time. Each support 35 has an upper
Is provided with a motor 11 for rotation.
Then, the support 35 rotates through the rotation transmitting means 38.
At the same time, the substrate 36 for film formation is also rotated. The motor 11 and the rotation transmitting means 38 are true
It may be configured so that it can be connected and disconnected in the air
No. As such a connection mechanism, an electric distribution
For wires, use combinations of current connection terminals and solenoids,
A combination of a spring and a brush is used,
Use a combination of quick coupling and solenoid
You can. In addition, for transmission of rotation and transport power,
Combination of gears or combination of gear and solenoid is used
Can be A device is provided at the contact point between the rotation transmitting means 38 and the container 34.
Operate the substrate temperature control means while maintaining the internal vacuum
A rotation mechanism is provided. As such a rotating mechanism,
Use a double or triple rotating shaft for oil seals and
It was made hollow using vacuum sealing means such as a canal seal.
Temperature detection means and heater wiring and medium inside the rotating shaft
A circulation route is provided. Media circulation path and external control equipment
Use a slip ring, a rotation introduction terminal, etc.
You. Reference numeral 44 is connected to a vacuum pump (not shown).
Gas exhaust piping. The container 34 is further evacuated.
A monitoring pressure gauge (not shown) is also connected. The material of the substrate 36 for film formation depends on the use of the product.
Depending on the surface of the conductive or insulating or insulating substrate, depending on
Which has been subjected to a conductive treatment is selected. As the conductive substrate, for example, aluminum
(Al), stainless steel (SUS), iron (F
e), nickel (Ni), chromium (Cr), manganese
Metals such as (Mn), copper (Cu), titanium (Ti) or
These alloys are mentioned. As the insulating substrate, borosilicate glass or SO
Glass, Pyrex® glass, etc.
Inorganic insulator such as Lamix, quartz, sapphire, or
Is fluororesin, polycarbonate, polyethylene teref
Talate, polyester, polyethylene, polypropylene
, Polystyrene, polyamide, vinylon, epoxy,
A synthetic resin insulator such as Mylar is exemplified. These excellence
The edge substrate is provided on at least the side on which a film is formed, if necessary.
Is subjected to a conductive treatment. This conductive treatment is performed by applying an IT
O (indium tin oxide), tin oxide, lead oxide, acid
Conductive layers such as indium iodide and copper iodide, Al, Ni, and gold
A metal layer made of (Au) or the like is formed by vacuum evaporation,
Deposition method, ion plating method, RF sputtering
Method, DC sputtering method, RF magnetron sputtering
Ring method, DC magnetron sputtering method, thermal CV
D method, plasma CVD method, spray method, coating method, dipping method
It is performed by forming with. Gas blow-out section for supplying a source gas for film formation
39 is disposed above the heating element 37, and its structure
Have a large number on the surface as shown in (1) to (4) of FIG.
Hollow structure with gas blowing holes,
The arrangement and size of the holes are determined in consideration of unevenness in gas blowing.
Many are provided at intervals with a distribution, thereby generating heat
A uniform gas blowing toward the body 37 is realized. According to the HW-CVD apparatus 33 having the above configuration,
For example, the gas introduced from the gas blowing section 39 is a heating element.
37, so as to flow along the surface,
Activated and then diffuse heat radially from heating element 37
And reaches the rotating film-forming substrate 36 and its outer peripheral surface.
Is formed. The material of the heating element 37 is a raw material gas.
Catalytic or thermal decomposition reactions occur in at least part of the
This makes the reaction product a deposited species, and
It is difficult for itself to enter the film deposited by sublimation or evaporation.
Is selected. Such materials include tungsten.
(W), platinum (Pt), palladium (Pd), molybdenum
(Mo), titanium (Ti), niobium (Nb), tantalum
(35Aa), cobalt (Co), Ni, Cr, M
n, or alloys thereof. The structure of the heating element 37 is shown in FIGS.
You. According to the heating element 30 shown in FIG.
As shown in the three configurations (b) and (c),
The inside of the insulating member 45 having a window frame shape (square frame shape)
Wire 3 that mainly generates heat by using the material of the heating element 37
7a. In the heating element 30 shown in FIG.
Both ends of the ear 37a are joined to the metal electrode 46,
Each of the metal electrodes 46 is externally connected via a current introduction terminal 52.
Section is energized. 47 denotes a wire 37a connected to a metal electrode 46.
It is a mounting hook to be fixed to. In the heating element 30 shown in (b) and (c),
Zigzag the wire 37a with the mounting hook 47
It is stretched out. In this manner, the wire 37a or the wire
Grid-like, saw using lament, ribbon, etc.
By stretching one or more in a flat shape in the shape of a solid wave,
It has a structure through which gas passes. Alternatively, the material of the heating element 37 described above may be used.
The main body is shown in FIG.
The heating element 30 is shown in six ways (a) to (f).
As a grid, mesh, mesh, honeycomb
Combined structure, or wire or filament,
Ribbons, grids, meshes, meshes, honeycombs
The structure may be combined with. Also, on a thin flat plate made of the above material,
Round, triangular, square, rectangular, rhombic, hexagonal, vertical
Slit shape, horizontally long slit shape, diagonal slit shape,
Or a large number of various ventilation holes made of a combination thereof
It may be configured. The heating element 30 having such a configuration is shown in FIG.
5 are shown in (g) to (k) shown in FIG. In addition, a plurality of cylindrical flat plates provided with ventilation holes
Are not overlapped with each other and between the cylindrical flat plates.
Superposed configuration with gas passing gap
Heating element 30 may be used. These heating elements 30
These are shown in (i) and (m). According to the heating element 37 configured as described above,
Electric power is supplied from outside the vacuum vessel 34 through the current terminal 52.
500 to 2200 ° C with Joule heat
Preferably, it is heated to a high temperature of 800 to 2000 ° C. The substrate held on the substrate support 35
Regarding the position of the film base 36, heat radiation from the heating element 37
The effect is so that the shot is divergent and this is absorbed
A good design. According to an experiment repeatedly performed by the present inventor,
For example, the material and thickness of the support 35 and the substrate 36 for film formation are
Thermal radiation and deposition density, film thickness vary depending on the size, etc.
In view of the uniformity of the film and the like,
10 to 150 mm, preferably 40 to 80 m
m, optimally 50 to 70 mm. Using the HW-CVD apparatus of the present invention, a-S
When an i-film is formed, a source gas for the a-Si film is used.
Are the same as those used in the glow discharge plasma CVD method.
The same. As the film forming material gas, silicon and hydrogen or
Compound consisting of a halogen element, for example, SiH _Four , S
i _Two H ₆ , Si _Three H ₈ , SiF _Four , SiCl _Four , SiC
l _Two H _Two Are used. As the diluting gas, H _Two , N _Two , He,
Ar, Ne, Xe or the like is used. The valence electron control gas includes, as a P-type impurity,
Group B elements (B, Al, Ga, etc.) of the periodic table
Compounds containing, for example, B _Two H ₆ , B (CH _Three ) _Three , Al
(CH _Three ) _Three , Al (C _Two H _Five ) _Three , Ga (CH _Three ) _Three etc
Is used, and as the N-type impurity, Group V of the periodic table
(P, As, Sb, etc.)
H _Three , P _Two H _Four , AsH _Three , SbH _Three Are used. As a band gap adjusting gas,
Represents C, N, and O, which are elements that expand the band gap,
Compounds, such as CH _Four , C _Two H _Two , C _Three H ₈ , N
_Two , NH _Three , NO, N _Two O, NO _Two , O _Two , CO, CO
_Two Ge, Sn, which are elements that narrow the band gap, etc.
Such as GeH _Four , SnH _Four , Sn (C
H _Three ) _Three Are used. During film formation, these gases are supplied to a pressure reducing valve.
Or the desired flow rate using a mass flow controller, etc.
Adjust the mixing ratio, introduce into the vacuum vessel 34, and blow out the gas.
The heat is supplied to the heating element 37 from the storage section 39. The gas pressure during film formation is 0.133 to 266.
0 Pa, preferably 0.665 to 1330 Pa, more preferably
Suitably, it is good to set to 1.33 to 133 Pa. Gas pressure
By setting the force in such a range, the supplied gas
Is efficiently decomposed and transported. In addition, the reaction product
By suppressing the secondary reaction in the gas phase,
A high-quality a-Si-based film can be formed. In addition,
In order to obtain a high quality film,
After the substrate is set, the inside of the vacuum
^-Four Exhaust to a high vacuum of about Pa to remove moisture and residual impurities in the container.
It is desirable to remove material gas beforehand. According to the HW-CVD apparatus having the above configuration,
If this is the case, an a-Si electrophotographic photosensitive drum can be manufactured.
The support 35 is made cylindrical to hold the cylindrical base 36.
And a temperature detecting means and a heating means are provided inside the support 35.
Provision of a substrate temperature control means comprising a step and a cooling means
Therefore, even if radiant heat from the heating element is
The substrate temperature could be maintained without lowering the usage efficiency. Ma
A mechanism for rotating the base 36 together with the support 35 is provided.
In addition, since the position accuracy is also improved,
A film of high quality and uniform thickness could be formed. Thus, the HW-CVD device 33 of the present invention
According to this, the film-forming base 36 is formed on both sides of the planar heating element 37.
And the gas blowing portion 39 is connected to the heating element 37.
By providing it at the upper part, there is no
As the amount of the film decreases, the size of the gas blowing section 39 itself decreases.
Into a gas flow from the substrate 36 for film formation.
As a result, the amount of film formed on the upstream member has been greatly reduced,
As a result, the film formed from the gas blowing portion 39 during film formation
The flying of the body to the substrate 36 for film formation is greatly reduced,
As a result, a high-quality electrophotographic photosensitive member can be provided. According to the HW-CVD apparatus 33 of the present invention,
Regarding the heat radiation from the heating element 37,
For controlling the temperature of the substrate according to the distance between the heating element and the heating element 37
Can be changed and adjusted to maintain a constant temperature.
Wear. Saturation temperature of the film-forming substrate 36 due to radiation
Is such that the distance between the film-forming base 36 and the heating element 37 is 40 mm.
Is 400 ° C. and the distance is 50 mm
Is 300 ° C and the distance is 100mm
In this case, it was 100 ° C. Usually, an a-Si electrophotographic photosensitive member is formed.
The substrate temperature at this time is about 300 ° C.
When the distance between 36 and the heating element 37 is set to 50 mm or less,
Is the temperature detection means as the substrate temperature control means 35a and the cooling means.
Means and, if necessary, heating means,
The film forming base 36 can be controlled to a predetermined temperature, and such a distance can be controlled.
If the separation exceeds 50 mm, the temperature detection means
And that it can be controlled only by heating means.
Confirmed by experiments. On the other hand, the efficiency of the source gas is described in the report
It can be seen that the ultimate density of the active species is lower than the film forming base 36 and the heating element 37.
And the same heating element 3
7, when the distance is 40 mm,
If it is 1, 0.64 at a distance of 50 mm and a distance of 100 mm
Is 0.016. In the HW-CVD apparatus 33 of the present invention,
Shows that the substrate 36 for film formation is arranged on both sides of the heating element 37.
As a result, the efficiency is almost doubled compared to the conventional one, and
The substrate 36 for film formation and the heat generation
By setting the distance from the body 37 to 55 mm or less, the gas
The rate is improved. (Example 2) The HW-CVD apparatus 33a of this example
As shown in FIG. According to the HW-CVD apparatus 33 of (Example 1)
For example, the film-forming base 36 is cylindrical, but instead of this,
In the HW-CVD apparatus 33a of this example,
A flat layer is formed thereon using the film-forming substrate 36a.
May be implemented. The substrate 36a for film formation having such a configuration is
If used, the support 35b for fixing it is also used for film formation.
The structure is such that the base 36a is disposed. According to the present embodiment, a planar light source is formed in the reaction chamber 34.
A heating element 37 is erected and gas is supplied to the heating element 37.
A gas blowing section is provided to control the temperature of the substrate 36a for film formation.
A means for setting the temperature of the substrate to be controlled is provided.
Extrusion part and substrate temperature setting means, other components,
If provided in the same manner as the HW-CVD apparatus 33 of (Example 1)
Good. (Example 3) The HW-CVD apparatus 33b of this example
As shown in FIG. According to the HW-CVD apparatus 33 of (Example 1)
For example, gas is blown above the heating element 37 via the insulating member 45.
The protruding portion 39 is provided, but instead of this, the HW
-In the CVD apparatus 33b,
A plate-shaped gas blowing section 52 is provided between the reaction chamber 34 and the reaction chamber 34.
ing. 44 is a gas connected to a vacuum pump (not shown).
Exhaust pipe. A large amount of gas is supplied to the gas
A passage hole 51 is formed, and the introduced gas is supplied to a gas blowing section.
Through 52, a substrate 36 for film formation and a heating element 37 are arranged.
Is introduced into the enclosed space, and diffuses inside the
The active species are contacted to form a film. According to this example, such a configuration is achieved.
At the same time as simplifying the configuration of various gas introduction members
And a film formed on the inner surface of the reaction chamber 34 by a gas flow.
Has the advantage of reducing EXAMPLES Examples will be described below. (Example 1) HW-C
Using the VD device 33, the layer shown in FIG.
An a-Si electrophotographic photosensitive drum having the above configuration was manufactured. In the same figure, aluminum metal is used.
A carrier injection blocking layer 54 and a photoconductive layer 55 on a substrate 53
And a surface protective layer 56 are sequentially laminated. As shown in FIG. 13, the heating element 37
0.5mm diameter 99.99% pure tungsten wire
37a are arranged in parallel in the form of a grid vertically.
is there. Insulating metal electrode 59 on stainless steel frame 57
It is electrically insulated and fixed via the material 58 and is a heating element.
Attach tungsten wire 37a and use hook 47
Fixed. And such a heating element 37 and a base
The distance to 36 was 60 mm. Also, means for heating the substrate
For 43, a cartridge heater was used. According to this device 33, the surface is mirror-finished.
Cylindrical Al substrate 3 having a diameter of 30 mm and a length of 254 mm
6 while heating the substrate temperature to 250 ° C.
1.33 × 1 with a rotary pump and turbo molecular pump
0 ^-Four Evacuation was performed to a degree of vacuum of Pa. Next, the heating element 37 is energized to
Heat to ℃ and prevent carrier injection under the film forming conditions shown in Table 1.
Layer 54, photoconductive layer 55 and surface protective layer 56 are sequentially formed
A-Si electrophotographic photosensitive drum (hereinafter referred to as a-Si
A) was prepared. [Table 1] The charging characteristic of the a-Si drum A was set to +6
The measurement was performed using a corona charger to which a voltage of kV was applied.
Sensitivity characteristics divided into a center wavelength of 680 nm and a half width of 2 nm
Half-exposure from 250 V with residual monochromatic light
When evaluated by rank, the results shown in Table 2 were obtained. As a comparative example, the conventional H shown in FIGS.
A-Si drum B obtained by W-CVD apparatus 21
And the conventional plasma CVD apparatus shown in FIG.
The characteristics of each of the a-Si drums C
Show. [Table 2] As is clear from this table, the conventional a-S
Comparing the i-drum B and the a-Si drum C,
Photographic properties were obtained. And this a-Si drum A
Mounted on KYOCERA FS-1750 for image evaluation
Table 3 shows the evaluation results. In this evaluation, image density, fog, resolution
The test was performed for each item of characteristics and gradation. Each item was evaluated relatively at two ranks.
◎ mark is very good, ○ mark is good
Indicates a favorable case. [Table 3] Next, the number of continuous film formations of the apparatus and the image
The results of evaluating the incidence of image defects such as black spots and white spots
It is shown in Table 4. In Table 4, the device 1 is the device according to the present invention.
33, and the device 2 is a conventional HW-C shown in FIGS.
The device 3 is a VD device 21, and the device 3 is a conventional plasma display device shown in FIG.
1 shows a CVD apparatus 1. The evaluation was performed continuously after the maintenance of the equipment.
The evaluation was performed based on the defect occurrence rate of each film formation lot with respect to the film number.
In addition, the plasma CVD apparatus of the apparatus 3 has the flammability of by-products.
Because a large amount of powder is generated, maintenance
Disassembly and cleaning). [Table 4] As is clear from the results shown in this table,
The number of times the defect occurrence rate is 10% or less in continuous film formation
HW-, which is excellent in mass productivity
A CVD device could be provided. Next, an experiment was performed using the device 33b shown in FIG.
Was done. Mirror-finished surface, diameter 30 mm, length
A 254 mm cylindrical Al substrate was set, and the substrate temperature was 2
Rotary pump and turbo molecule while heating to 50 ° C
1.33 × 10 by pump ^-Four Vacuum to Pa vacuum
I took care. Next, energize the thermal catalyst to 1700 ° C.
Up to the thickness of
A) the injection blocking layer 54, the photoconductive layer 55, and the surface protection layer 56 in this order.
Next, an a-Si drum was formed. [Table 5] The charging characteristic of the a-Si drum was set to +6 k
Measured using a corona charger to which a voltage of V
Spectral characteristics at 680 nm center wavelength and 2 nm half width
Exposure amount from 250 V to half-life with residual monochromatic light, residual potential
As a result, the chargeability was 255 V and the half-exposure amount was 0.1.
41μJ / cm ^Two And the residual potential is 5V or less.
It showed excellent properties. Further, this a-Si drum was manufactured by Kyocera FS.
When the image was evaluated by mounting it on a -1750,
An image having excellent resolving power without fogging was obtained. Further, as in the example described above, the continuous
When the number of films and the occurrence rate of image defects were evaluated,
The number of times that the defect occurrence rate is 10% or less is 8 or more times
Thus, an HW-CVD apparatus excellent in mass productivity was obtained. Note that the present invention is limited to the above embodiment.
It is not intended to
Various changes and improvements are acceptable. For example, a gas supplying gas to the heating element
The part where the blow-off part is provided is located above the heating element or
In addition to the outside of the film substrate, for example,
Gas introduction parallel or perpendicular to the membrane substrate
Constituted by a pipe-like gas introduction means with holes
It may be something. As described above, the thin film deposition apparatus of the present invention
According to this, a heating element is arranged in a plane in a reaction chamber, and this heating element is
A gas blower to supply gas to the
The substrate for film formation is arranged on both sides of the body, and the substrate for film formation is further provided.
Substrate temperature setting means for controlling the temperature of the
The film is formed on the substrate for film formation by the ear CVD method.
This reduces the amount of film deposited on the gas blowout
Slightly, this causes peeling from the gas outlet during film formation
The extent to which the deposited film body flies to the film-forming substrate 36 is reduced.
Can be removed or lost, resulting in electrophotography
High quality film-forming products such as photoconductors could be provided. According to the present invention, the production yield is high.
As a result, low-cost and high-quality deposition products
Could be provided.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front view schematically showing an HW-CVD apparatus according to the present invention. FIG. 2 is a schematic cross-sectional view of the HW-CVD apparatus according to the present invention. FIGS. 3 (1) to (4) are diagrams showing distribution of gas holes provided in a gas blowing section. FIG. 4 is a schematic cross-sectional view of another HW-CVD apparatus according to the present invention. FIG. 5 is a schematic cross-sectional view of still another HW-CVD apparatus according to the present invention. FIG. 6 is a schematic configuration diagram of a conventional glow discharge plasma CVD apparatus. FIG. 7 is a schematic view of a conventional HW-CVD apparatus. FIG. 8 is a front view schematically showing another conventional HW-CVD apparatus. FIG. 9 is a plan view schematically showing another conventional HW-CVD apparatus. FIGS. 10A to 10C are front views of a heating element according to the present invention. FIGS. 11A to 11M are front views of a main part of a heating element according to the present invention. FIG. 12 is a schematic sectional view of the electrophotographic photosensitive member according to the present invention. FIG. 13 is an enlarged front view of a main part of the heating element according to the present invention. [Description of Signs] 11 ... Motors 14, 27, 34 ... Reaction chambers 16, 22, 36 ... Deposition substrates 17, 37 ... Heat generating elements 21, 33, 33a, 33b ... HW-CVD devices 23 and 39 gas blowing unit 35 support 35a substrate temperature setting means 37 heating element 37a wire

   ────────────────────────────────────────────────── ─── Continuation of front page    F term (reference) 4K030 AA06 AA17 AA18 BA30 CA02                       CA16 FA10 FA17 JA10 KA25                       KA41 LA16                 5F045 AA03 AB04 AC01 AD06 AE17                       AF03 BB01 CA15 DP09 DQ10                       EK08

Claims (1)

Claims: 1. A flat heating element is erected in a reaction chamber, and a gas blowing section for supplying gas to the heating element is provided. A substrate for film formation is provided on both sides of the heating element. And a substrate temperature setting means for controlling the temperature of the film-forming substrate, and forming a film on the film-forming substrate by a hot wire CVD method.