JP2003332589A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device in which a solid state image sensor can be contained in the same semiconductor package as that of an analog front end element and a timing generator element. <P>SOLUTION: In the recess 21 of a basic body 2, an AFE element 51 and a TG element 61 are fixed while connecting its pad electrodes 52 and 62 with wiring 3A formed inside the recess 21. The solid state image sensor 71 is also fixed on the upper surface of a heat spreader 11 passing the recess 21 while directing the light receiving face upward (to face a transparent seal glass 12). An electrode of the solid state image sensor 71 is connected with the wiring in the recess 21 of the basic body 2 through a thin gold wire. The recess 21 of the basic body 2 is internally sealed with transparent seal glass 11 and the interior is evacuated. The invention is applicable to a semiconductor package. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a manufacturing method, and more particularly, to a light-receiving element and a semiconductor element for processing an electric signal from the light-receiving element or a semiconductor element for adjusting the timing of signal processing. The present invention relates to a semiconductor device and a manufacturing method capable of being housed and arranged in a package.

[0002]

2. Description of the Related Art In a digital still camera or a digital video camera, a solid-state image pickup device Mc (for example, CMOS (Complementary Metal Oxide Semiconducto) that converts an optical signal input through a lens into an electric signal by photoelectric conversion is used.
r) Sensor, CCD (Charged Coupled Device), semiconductor element (hereinafter referred to as AFE element) as an analog front end that performs signal processing such as A / D conversion on electric signals from the individual image pickup element Mc Ma , And a semiconductor element (hereinafter referred to as a TG element) Mt as a timing generator that adjusts the timing so that signal transmission is efficiently performed between the solid-state image sensor Mc and the AFE element Ma.

[0003]

By the way, since the solid-state image pickup device Mc has a characteristic that noise is generated when the temperature of the device rises, the solid-state image pickup device Mc is usually set to the AFE device Ma which generates a lot of heat. And the TG element Mt cannot be incorporated into one package. For example, as shown in FIG. 1, different semiconductor packages Pc, Pa,
It is built in and implemented in Pc. The AFE element Ma and the TG element Mt can be integrated into one semiconductor package, but in the end, the solid-state image pickup element Mc
Is incorporated into another semiconductor package.

It has been attempted to use a Peltier device for cooling to incorporate the solid-state image pickup device Mc, the AFE device Ma, and the TG device Mt into one package.
In this case, the characteristics of the Peltier device increase power consumption and increase the number of components and the like, so that it cannot be used particularly for a portable video camera.

As described above, conventionally, there is a problem that the solid-state image pickup device Mc, the AFE device Ma, and the TG device Mt cannot be incorporated and used in one semiconductor package with a simple structure.

The present invention has been made in view of such a situation, and has a simple structure and a solid-state image pickup device Mc and an AF.
The E element Ma and the TG element Mt can be incorporated into one package for use.

[0007]

The semiconductor device of the present invention comprises:
A first opening and a second opening through which the heat sink penetrates, a third opening sealed with a transparent material, a base formed to have a recess, a heat sink, and a heat sink The resin that seals the gap between the first opening and the gap between the heat dissipation plate and the second opening, and one surface of the heat dissipation plate that faces the third opening, the light receiving surface is the third opening. The optical signal input to the light-receiving surface from the light-receiving element, which is arranged in the space surrounded by the light-receiving element arranged so as to direct the light, the inner surface of the recess, and the other surface of the heat sink, is photoelectrically converted. At least one of a first semiconductor element that performs signal processing on an electric signal obtained by conversion or a second semiconductor element that adjusts the timing of signal processing.
And an external connection terminal formed on the outside of the base body and a wiring portion formed inside the recess for electrically connecting the light receiving element, the first semiconductor element, the second semiconductor element, or the external connection terminal. , And a transparent material.

When the semiconductor device is attached to the housing in which the lens that receives the optical signal on the light receiving surface of the light receiving element is stored, the heat dissipation plate is provided with the positioning portion that fits with the positioning portion provided in the housing. be able to.

The method for manufacturing a semiconductor device of the present invention has a first opening and a second opening through which a heat sink penetrates, a third opening sealed with a transparent material, and a recess. A step of forming a substrate on the substrate, a step of arranging at least one of a first semiconductor element for performing signal processing on an electric signal from a light receiving element and a second semiconductor element for adjusting timing of signal processing inside a concave portion. And a step of connecting the first semiconductor element or the second semiconductor element to a wiring portion formed inside the recess for electrically connecting the first semiconductor element or the second semiconductor element to an external connection terminal formed outside the light receiving element or the recess. When,
By sealing the gap between the radiating plate and the first opening that penetrates and the gap between the radiating plate and the second opening with resin, the process of fixing the radiating plate and the third opening of the radiating plate are performed. On the surface to be directed, a step of arranging the light receiving element so that the light receiving surface is directed to the third opening, a step of electrically connecting the wiring portion and the light receiving element, and a third opening are recessed. The step of sealing with a transparent material is performed so that the inside of the container becomes a vacuum.

In the method for manufacturing a semiconductor device of the present invention, the semiconductor device has a first opening and a second opening through which the heat sink penetrates, a third opening sealed with a transparent material, and a recess. At least one of the first semiconductor element that performs signal processing on the electric signal from the light receiving element and the second semiconductor element that adjusts the timing of signal processing is disposed inside the recessed portion. The first semiconductor element or the second semiconductor element is connected to the wiring portion formed inside the concave portion to electrically connect to the light receiving element or the external connection terminal formed outside the concave portion, and the radiated heat is penetrated. By sealing the gap between the plate and the first opening and the gap between the heat dissipation plate and the second opening with a resin, the heat dissipation plate is fixed, and the surface of the heat dissipation plate facing the third opening is fixed. The light receiving element has a light receiving surface with a third opening It is arranged to direct,
The wiring portion and the light receiving element are electrically connected, and the third opening is sealed with a transparent material so that the inside of the recess is evacuated.

[0011]

FIG. 2 is a perspective view of a semiconductor package 1 to which the present invention is applied, as seen from obliquely above. Figure 3
Represents the appearance of the semiconductor package 1 when viewed from directly above. Since the transparent seal glass 12 is attached to the upper surface of the semiconductor package 1, FIG. 3 also shows the inside of the semiconductor package 1 that can be seen through the transparent seal glass 12.

FIG. 4 shows X1 of the semiconductor package 1 of FIG.
It is a cross-sectional view taken along line X2-. FIG. 5 is a sectional view taken along line Y1-Y2 of the semiconductor package 1 of FIG.

The semiconductor package 1 includes a solid-state image pickup device 71 for converting an optical signal input via an optical lens into an electric signal by photoelectric conversion, and an A / D conversion or the like for the electric signal from the solid-state image pickup device 71. A semiconductor element (AFE element) 51 as an analog front end that performs signal processing,
Also, a semiconductor element (TG element) 61 as a timing generator that adjusts the signal transmission timing so that the signal transmission is efficiently performed between the solid-state image pickup element 71 and the AFE element 51 is as shown in FIGS. It is stored and arranged in.

The semiconductor package 1 is basically composed of a substrate 2, and a wiring portion 3A formed of a lead frame and electrically connected to each other and an external connection terminal 3B. The wiring portion 3A may be formed by firing a conductive paste printed on a green sheet and joined to the external connection terminal 3B made of a lead frame.

The base 2 is formed of a base material such as plastic mold or ceramic so as to have a recess 21. The recess 21 is provided with openings 2A and 2B through which the heat dissipation plate 11 penetrates on its side surface and an opening 2C sealed by the transparent seal glass 12 on its upper surface.

The heat dissipation plate 11 penetrating the base 2 is made of a material such as copper, aluminum nitride, or graphite having high heat conductivity. The transparent seal glass 12 is made of a material such as borosilicate glass that has excellent transmission characteristics in the visible light region and can suppress the generation of radiation that adversely affects the solid-state image sensor 71.

The space between the openings 2A and 2B on the side surface of the base 2 and the heat dissipation plate 11 is sealed with resin 13.

In the recess 21 of the substrate 2, the AFE element 51 and the TG element 61, the pad electrode 52 and the pad electrode 62 (to be exact, bumps (projection electrodes) formed thereon), and the recess 21 are formed. The wiring portion 3A formed inside is connected and attached.

The recess 21 also has a heat sink 11 passing therethrough.
The solid-state image sensor 71 is attached to the upper surface of the so that the light receiving surface thereof faces upward (directing toward the transparent seal glass 12).

The electrode 72 of the solid-state image pickup device 71 has a concave portion 21.
It is electrically connected to the wiring portion 3A formed on the inside by a thin gold wire 81.

The external connection terminals 3B arranged on the back surface of the semiconductor package 1 in the shape of a grid are fixed image pickup device 71, AFE device 51, or TG housed in the recess 21.
It is electrically connected to the element 61 via the wiring portion 3A.

In the semiconductor package 1, for example, as shown in FIG. 6, the external connection terminals 3B are pierced through the through holes 102 provided in the substrate 101 and soldered, and the substrate 1
Other semiconductor element (AFE element 5
1) which electrically processes the electric signal from 1). It is also possible to solder to a land (not shown) provided on the external board.

Although the external connection terminals 3B are arranged in a grid shape on the back surface of the semiconductor package 1 in this example, they may be arranged along the frame of the semiconductor package 1.

As shown in FIG. 7, the semiconductor package 1 is attached to a cylindrical lens unit 111 in which an optical lens is attached so that its opening 112 and the surface of the transparent seal glass 12 face each other. . Heat sink 1
Positioning portions 31A and 31B that fit with positioning portions 113A and 113B provided near the opening 112 of the lens unit 111 are provided at both ends of the lens unit 1. By mounting the semiconductor package 1 at the position determined by the positioning portion 31 of the heat sink 11 and the positioning portion 113 of the lens unit 111, the lens unit 11
The optical signal from the optical lens attached inside 1
The light can be appropriately incident on the light receiving surface of the fixed image pickup device 71 housed and arranged inside the semiconductor package 1 through the transparent seal glass 12.

A method of manufacturing the semiconductor package 1 having such a structure will be described with reference to FIG.

First, as shown in FIG. 8A, the AFE element 51 and the TG element 61 are mounted inside the recess 21 by the flip chip mounting method. Specifically, AFE
The pad electrode 52 of the element 51 and the pad electrode 62 of the TG element 61 are electrically connected to the wiring portion 3A formed on the bottom surface of the recess 21 of the base 2. In this case, the AFE element 51 and the TG element 61 are attached so that their circuit forming surfaces face downward.

The AFE element 51 and the TG element 61
It is also possible to electrically connect the pad electrode 52 and the pad electrode 62 to the wiring portion 3A by a wire bonding method using a gold wire or the like.

Next, as shown in FIG. 8B, the heat radiating plate 11 is inserted into the openings 2A and 2B provided on the side surface of the base 2 to a predetermined position so as to penetrate the base 2.

Next, as shown in FIG. 8C, the gap between the openings 2A, 2B on the side surface of the base 2 and the heat dissipation plate 11 is sealed with resin 13. As a result, the heat dissipation plate 11 can be fixed to the base body 2 and dust and the like can be prevented from entering through the gap.

Next, as shown in FIG. 8D, the fixed image pickup device 71 is fixed to the upper surface of the heat dissipation plate 11 with a resin such as silver paste having good heat conductivity so that its light receiving surface faces upward. . The electrode 72 of the fixed image pickup device 71 and the wiring portion 3A
Are electrically connected with a gold wire 81.

Next, as shown in FIG. 8E, after the inside of the recess 21 is evacuated, the transparent seal glass 12 is mounted.

As described above, since the inside of the concave portion 21 is in a vacuum and air convection is not performed inside the concave portion 21, A
It is possible to suppress conduction of heat generated by the FE element 51 or the TG element 61 to the fixed image pickup element 71. Further, the heat generated inside the recess 21 is radiated to the outside of the recess 21 via the heat dissipation plate 11. From these things, it is possible to prevent the temperature rise of the fixed image sensor 71 and suppress the noise generation due to the temperature rise. Therefore, the fixed image sensor 71 is the same as the AFE element 51 and the TG element 61. It can be used by incorporating it in the semiconductor package 1.

In the above description, the semiconductor package 1 includes the solid-state image pickup element 71, the AFE element 51, and the T element.
Although the G element 61 was incorporated, the solid-state image pickup element 71
Then, either one of the AFE element 51 and the TG element 61 can be incorporated into the semiconductor package 1.

Further, as shown in FIG.
(Or the TG element 61) can be mounted outside the semiconductor package 1.

[0035]

According to the present invention, the light receiving element is accommodated in the same package as the first semiconductor element for processing the electric signal from the light receiving element or the second semiconductor element for adjusting the timing of signal processing. be able to.

[Brief description of drawings]

FIG. 1 is a diagram showing a semiconductor package of a solid-state image sensor, an AFE element, and a TG element.

FIG. 2 is a diagram showing a configuration example of the appearance of a semiconductor package to which the present invention has been applied.

3 is a view of the semiconductor package of FIG. 2 as viewed from directly above.

4 is a cross-sectional view of the semiconductor package of FIG.

5 is another cross-sectional view of the semiconductor package of FIG.

FIG. 6 is a diagram illustrating a method of mounting the semiconductor package of FIG.

FIG. 7 is a diagram illustrating a method of attaching the semiconductor package of FIG. 2 to a lens unit.

FIG. 8 is a diagram illustrating a method of manufacturing the semiconductor package of FIG.

9 is another cross-sectional view of the semiconductor package of FIG.

[Explanation of symbols]

1 semiconductor package, 2 base, 2A opening,
2B opening, 2C opening, 3A wiring, 3B
External connection terminal, 11 Transparent reel glass, 12
Heat sink, 13 resin, 21 concave part, 31, positioning part, 51 AFE element, 52 pad electrode,
61 TG device, 62 pad electrode, 71 fixed image pickup device, 72 electrode, 81 gold wire, 101 substrate, 102 through hole, 111 lens unit, 112 opening part, 113 positioning part

Claims (3)

[Claims] 1. A first opening and a second opening through which a heat sink penetrates, a third opening sealed with a transparent material,
A base formed to have a recess, the heat dissipation plate, a resin sealing the gap between the heat dissipation plate and the first opening, and the gap between the heat dissipation plate and the second opening, On one surface of the heat dissipation plate that points to the third opening,
From the light receiving element disposed in a space surrounded by a light receiving element whose light receiving surface is directed to the third opening, an inner surface of the recess, and the other surface of the heat dissipation plate. At least one of the first semiconductor element that performs signal processing on the electric signal obtained by photoelectrically converting the optical signal input to the light receiving surface, or the second semiconductor element that adjusts the timing of the signal processing. And an external connection terminal formed outside the base body, and electrically connecting the light receiving element, the first semiconductor element, the second semiconductor element, or the external connection terminal,
A semiconductor device comprising: a wiring portion formed inside the concave portion; and the transparent material. 2. In the case where the semiconductor device is attached to a housing in which a lens for making the optical signal incident on the light receiving surface of the light receiving element is housed, the heat dissipation plate is provided in the housing. The semiconductor device according to claim 1, further comprising a positioning portion that fits with the positioning portion. 3. A first opening and a second opening through which the heat sink penetrates, a third opening sealed with a transparent material,
And a step of forming a base body having a recess, at least one of a first semiconductor element that performs signal processing on an electric signal from a light receiving element, and a second semiconductor element that adjusts the timing of the signal processing, A step of arranging inside the recess, and the first semiconductor element or the second semiconductor element,
A step of connecting to a wiring portion formed inside the concave portion for electrically connecting to the light receiving element or an external connection terminal formed outside the concave portion; The process of fixing the heat sink by sealing the gap between the openings and the gap between the heat sink and the second opening with resin, and the surface of the heat sink facing the third opening. The step of arranging the light receiving element so that the light receiving surface is directed to the third opening, the step of electrically connecting the wiring portion and the light receiving element, and the third opening. And a step of sealing with the transparent material so that the inside of the recess is vacuumed.