JP2003332544A - Solid-state image pickup element and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state image pickup element which can properly maintain a color balance even if light is made incident at an angle with respect to a color filter, and also to provide a method of manufacturing the same. <P>SOLUTION: On a semiconductor substrate 10, channels 12 which constitute a photo detecting pixel are formed. On the channels 12, a gate insulation film 20, a gate electrode 21, and an interlayer insulation film 22 are formed in this order. On the interlayer insulation film 22, color filters 24 corresponding to primary colors of red (R), green (G), and blue (B) are formed. On the color filters 24, a flattening layer 25 is formed. Between the color filters 24 which allow different primary color lights pass through, partition walls 30 which divide the color filters 24 are formed. The partition walls 30 are formed of aluminum which is almost completely reflective of light. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor having a color filter and a method for manufacturing the same.

[0002]

2. Description of the Related Art As is well known, CCD image sensors are widely used as image pickup devices for various cameras and the like. As the CCD image sensor, (a) the light utilization efficiency is improved. (B) It is easy to increase the density of pixels (higher resolution). For example, a frame transfer type is known in which an image pickup section that performs photoelectric conversion and a storage section that temporarily stores the photoelectrically converted charges are separately arranged in an element with the intention of such things. .

FIG. 5 shows the structure of a frame transfer type CCD image sensor which is generally used in the past. As shown in FIG. 5, the CCD image sensor 1
00 is an image pickup unit 100P that performs photoelectric conversion, a storage unit 100C that temporarily stores the photoelectrically converted charges,
The horizontal transfer unit 100H for outputting the electric charge stored in the storage unit 100C to the output unit 100S is configured.

Here, the image pickup section 100P performs photoelectric conversion corresponding to the irradiated light image. Then, the information charges photoelectrically converted and accumulated for each pixel are transferred at high speed (frame shift) to the accumulating unit 100C for each frame. The information charges for one frame taken into the storage section 100C are then transferred to the horizontal transfer section 100H line by line. Then, the information charges taken into the horizontal transfer unit 100H are sequentially transferred to the output unit 100S pixel by pixel, and the information charges transferred to the output unit 100S are converted into voltage values, and the image pickup of the CCD image sensor 100 is performed. It is output as a signal to a signal processing system (not shown).

The transfer operation of the information charges is performed by applying a voltage to the gate electrode of each part of the CCD image sensor 100. Specifically, in the image pickup unit 100P and the storage unit 100C, for example, different voltages (φP) of three phases are used.
1 to φP3, φC1 to φC3) are applied to predetermined gate electrodes to transfer information charges. On the other hand, in the horizontal transfer unit 1H, for example, two phases of different voltages (φH
, ΦH2) is applied to a predetermined gate electrode to transfer information charges.

FIG. 6 shows the CCD image sensor 100.
Among these, the top view of the said imaging part 100P is shown. As shown in FIG. 6, a gate electrode 121 corresponding to each pixel of red (R), green (G), and blue (B) is arranged on a silicon substrate 110 via a gate insulating film (not shown). There is. An interlayer insulating film (not shown) is formed on the gate electrode 121, and a voltage supply line 140 is formed on the interlayer insulating film along the transfer direction of the information charges from the imaging unit 100P to the storage unit 100C. Are formed. Each of the voltage supply lines 140 is electrically connected to every other adjacent two of the gate electrodes 121 with their phases shifted in the information charge transfer direction. Then, by applying any of the three phases of different voltages φP1 to φP3 to each of the voltage supply lines 140, the same voltage is applied to every two adjacent gate electrodes 121 in the charge transfer direction. Will be done.

FIG. 7 is a sectional view taken along line AA of FIG. As shown in FIG. 7, this CCD image sensor 100
In, a p-well 111 is formed by implanting p-type impurities into the n-type silicon substrate 110. Then, in the p well 111, a channel 112 in which an n-type impurity is injected is formed corresponding to each pixel of red (R), green (G), and blue (B). Also,
Between these channels 112, adjacent channels 112
A channel separation region 113 that separates the spaces is formed. Further, a gate electrode 121 is formed on the silicon substrate 110 via a gate insulating film 120.

Here, the channel 112 corresponding to each pixel
Each of which cooperates with the p-well 111 to form a light-receiving pixel that receives light and performs photoelectric conversion. Then, by applying the voltage to the gate electrode 121 via the voltage supply line 140, the information charges accumulated in the light receiving pixels are orthogonal to the drawing, that is, from the imaging unit 100P to the accumulation unit 1.
The data will be sequentially transferred in the direction toward 00C.

On the other hand, an interlayer insulating film 122 is formed on the silicon substrate 110 so as to cover the gate electrode 121. Then, on the interlayer insulating film 122,
An acrylic layer 123 is formed, and a color filter 124 is formed on the acrylic layer 123 so as to correspond to each pixel of red (R), green (G), and blue (B). Further, a flattening layer 125 made of acrylic for flattening the color filters 124 is formed on the color filters 124.

As a result, the CCD image sensor 100
The light incident on is condensed by the lens 150 at the central portion of the channel 112 constituting the light receiving pixel, and photoelectrically converted there. At this time, prior to the incidence of light on these channels 112, first, light corresponding to a predetermined primary color is selectively transmitted by the color filter 124, and the other light is cut off. Therefore, each channel 11
In No. 2, the photoelectric conversion described above is performed corresponding to the light of the primary colors selectively transmitted by the corresponding color filters 124.

[0011]

By the way, in the conventional CCD image sensor 100 described above, for example, as shown as the incident light L1 in FIG. 7, the light obliquely incident passes through the color filter 124. After that, the light may not be incident on the light receiving pixel corresponding to the color filter 124 but may be incident on the adjacent light receiving pixel. That is, in the example of FIG. 7, the blue (B) color filter 12
The light incident on 4 is a green (G) color filter 12
The light may be incident on the light receiving pixel corresponding to No. 4. In this case, since the signal that should be photoelectrically converted by the light receiving pixel corresponding to blue (B) is added as a green component in the light receiving pixel corresponding to green (G), the color balance is increased. And the color reproducibility also deteriorates.

Not only the above-mentioned frame transfer type CCD image sensor but also a solid-state image pickup device having a color filter has a problem that the color balance is deteriorated due to the obliquely incident light. It is almost common. Also, the above red (R),
Even when a complementary color filter composed of yellow, cyan, and magenta is adopted, not only the primary color filter composed of green (G) and blue (B), such inconvenience caused by obliquely incident light is still caused. It will occur similarly.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a solid-state image pickup capable of maintaining a suitable color balance even when light is obliquely incident on a color filter. An object is to provide an element and a manufacturing method thereof.

[0014]

According to the present invention, a semiconductor substrate, a plurality of light-receiving pixels formed on one main surface of the semiconductor substrate, and a plurality of light-receiving pixels arranged on the plurality of light-receiving pixels are provided. A color filter in which a plurality of transmissive segments are regularly arranged, and a partition wall having a transmissivity sufficiently lower than that of the segment region is arranged at a boundary of the plurality of segments, thereby providing a color filter. Even when the light is obliquely incident on the above, the color balance can be appropriately maintained.

Further, according to the present invention, in a method of manufacturing a solid-state image pickup device having a color filter mounted thereon, a first step of forming a plurality of light receiving pixels on one main surface of a semiconductor substrate, A second step of stacking a low light-transmitting film having a transmittance sufficiently lower than that of the color filter, and forming a mask on the low light-transmitting film so as to cover the boundary of each light receiving pixel. And a fourth step of etching the low light-transmissive film according to the mask and leaving the low light-transmissive film on the boundaries of the light-receiving pixels to form partition walls. A fifth step of stacking a color resist that transmits specific light on the plurality of light receiving pixels, and selectively etching the color resist according to a region partitioned by the partition wall to form the color filter. By doing so, it is diagonal to the color filter This makes it possible to maintain the appropriate color balance even when light is incident on.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment) Hereinafter, a solid-state image pickup device according to the present invention will be described as a frame transfer type CC.
Regarding the first embodiment applied to the D image sensor,
A description will be given with reference to the drawings.

The CCD image sensor according to this embodiment basically has the same structure as that shown in FIG. FIG. 1A shows a cross-sectional structure of the image pickup section of the CCD image sensor according to the present embodiment.

Also in this CCD image sensor, n
A p-type impurity is injected into the p-type semiconductor substrate 10 to form a p-well 11. Then, in the p-well 11, an n-type impurity-implanted channel 12 corresponding to each pixel of red (R), green (G), and blue (B).
Are formed. Also, between these channels 12,
In order to separate the adjacent channels 12, a channel separation region 13 in which a high concentration of p-type impurities is injected is formed. Furthermore, a gate electrode 21 is formed on the semiconductor substrate 10 with a gate insulating film 20 interposed therebetween.

Here, each of the channels 12 corresponding to each pixel constitutes a light receiving pixel which cooperates with the p well 11 to receive light and perform photoelectric conversion. Then, the gate electrode 2
By applying the voltage to No. 1, the information charges accumulated in each light receiving pixel are sequentially transferred in the direction orthogonal to the drawing, that is, in the direction from the imaging unit to the storage unit.

On the other hand, an interlayer insulating film 22 is formed on the semiconductor substrate 10 so as to cover the gate electrode 21. A color filter 24 is formed on the interlayer insulating film 22 in correspondence with each pixel of red (R), green (G), and blue (B). Further, on the color filter 24, the color filter 24
A flattening layer 25 made of acrylic for flattening the top is formed.

Further, in this embodiment, FIG.
As shown in (a), partition walls 30 partitioning the filters are provided at the filter boundaries adjacent to each other corresponding to the different primary color lights (lights of different wavelengths) of the color filter 24. That is, the partition wall 30 is used as the color filter 2.
And the interlayer insulating film 2 as the underlying film.
2 is formed between the adjacent color filters 24 among the color filters 24 that transmit different primary color lights. The upper surfaces of the color filters 24 and the partition walls 30 are flattened. In addition, this partition 3
0 is formed vertically, in other words, so that its side surface and the surface of the interlayer insulating film 22 as a base film are orthogonal to each other.

By providing the partition wall 30 in this manner, it is possible to avoid the problem that obliquely incident light enters the adjacent light receiving pixels, as illustrated by the incident light L1 and L2 in FIG. You can Moreover, this partition 30 is
It is made of aluminum (Al). Therefore, in FIG.
As shown in (a), the obliquely incident light is reflected by the partition wall 30 and is incident on a desired light receiving pixel. Therefore, the light collecting performance is improved.

FIG. 1B shows a plan view of the partition wall 30. As shown in FIG. 1B, the partition walls 30 are formed in a grid shape so as to partition each pixel. here,
The color filter exemplified in the present embodiment is a mosaic type, and green (G) and red (R) are alternately repeated corresponding to odd rows of a plurality of light-receiving pixels forming the imaging unit, and It has a Bayer array in which blue (B) and green (G) are alternately repeated corresponding to even rows. Then, in order to partition the color filter 24 corresponding to each of the light receiving pixels, partition walls 30 are formed in a grid shape corresponding to the matrix arrangement of the plurality of light receiving pixels forming the imaging unit.

The manufacturing process of the CCD image sensor according to this embodiment will be described with reference to FIG.

In this series of steps, first, referring to FIG.
As shown in (a), a p-well 1 is formed on an n-type semiconductor substrate.
1 is formed, and a channel 12 and an isolation region 13 are formed in the surface region of the p well 11. Then, the gate insulating film 20 is formed on the surfaces of the channel 12 and the isolation region 13.
The gate electrode 21 is formed through the
An interlayer insulating film 22 is formed on the gate electrode 21.
A voltage supply line 40 is formed to contact the. And
The surface of the interlayer insulating film 22 is flattened. The step shown in FIG. 2A is performed using a well-known semiconductor process.

Subsequently, as shown in FIG. 2B, a metal layer 30 'made of aluminum to be the partition wall 30 is formed on the interlayer insulating film 22 by, for example, a sputtering method,
The metal layer 30 'is heat treated to planarize the surface.
Next, as shown in FIG. 2C, an inorganic film 60 (for example, a silicon oxide film (SiO ₂ )) 60 used as a mask when etching the metal layer 30 ′ is formed. Furthermore,
A resist 61 corresponding to the shape of the partition 30 is patterned on the inorganic film 60 by a lithography technique.

Further, as shown in FIG. 2D, the inorganic film 60 is etched by using the resist 61 as a mask,
A mask 60 'is formed. Then, using this mask 60 ′, the metal layer 30 ′ is etched using anisotropic etching such as plasma etching,
The partition wall 30 shown in (e) is formed.

As also shown on the right side of FIG. 2, in the series of forming steps shown in FIGS. 2B to 2E, the partition walls 30 are formed and the interlayer insulating film 22 is formed. The metal wiring 31 that makes electrical contact with the wiring for driving the light receiving pixels formed on the semiconductor substrate 10 may be formed outside the light receiving area. That is, as shown in FIG. 2B, when forming the pattern of the resist 61, the resist 70 patterned in the shape of the metal wiring 31 is formed. Then, as shown in FIG. 2C, when the inorganic film 60 is etched by the resist 61, the inorganic film 6 is formed by using the resist 70 as a mask.
0 is etched to form a mask 62. Then, as shown in FIG. 2D, when the partition wall 30 is formed using the mask 60 ′, the metal wiring 3 is formed using the mask 62.
1 is formed. As a result, the metal wiring 31 and the partition 3
0 is the same member.

After forming the partition wall 30 in this manner, FIG.
As shown in (e), the area defined by the partition wall is filled with a color resist 24 'having a predetermined primary color. The color resist 24 'is a resist containing a pigment as its component, and has a function of transmitting light of a predetermined primary color light. Then, the color resist 24 '
The color filter 24 'corresponding to the primary color is formed by removing the same color resist 24' formed in a region other than the portion to be the pixel region corresponding to the primary color. Here, in the case where the color resist 24 'is a negative type resist, for example, as shown in FIG. 2 (e), the color resist 24' corresponds to the region where the color resist 24 'is arranged, for example, i-line or the like. This is solidified by irradiating exposure light such as near ultraviolet rays. Next, the color resist 24 'in the area not exposed to the exposure light is removed. Here, the solidified portion selectively remains.

The process of forming the color filter 24 is performed until all the color filters corresponding to the primary colors of R, G and B are formed. That is, for example, when the primary color red color filter 24 is first formed, then,
A color resist other than red is formed in a region partitioned by the partition wall and in which a color filter of primary color red is not formed, and a color filter corresponding to the primary color of the color resist is formed by a lithography technique. . Then, by repeating such a process three times, the color filter 24 that transmits all the primary color light is formed.

According to this embodiment described above, the following effects can be obtained.

(1) By providing a partition wall 30 for partitioning the filters adjacent to each other corresponding to lights of different wavelengths of the color filter 24, obliquely incident light is incident on adjacent light receiving pixels. It is possible to preferably avoid the problem. In addition, the partition 3 is provided in the color filter 24.
By having 0, it is also possible to clearly set the boundary between the filters that transmit different primary color lights. By the way, when the partition wall 30 is not formed as shown in FIG. 7, the boundary between the filters that transmit different primary color lights (lights of different wavelengths) is not clear, and the frequency of the transmitted light is around this. The area is not clearly defined.

(2) By forming the partition wall 30 from aluminum, obliquely incident light can be almost completely reflected by the partition wall 30. Therefore, it is possible to improve the light collecting performance.

(3) When forming the partition walls 30, wirings for making electrical contact with the elements on the semiconductor substrate 10 were simultaneously formed on the interlayer insulating film 22. Thereby, the partition wall 3
Since the step of forming 0 is not separately provided, it is possible to avoid an increase in the number of manufacturing steps.

(Second Embodiment) The second embodiment in which the solid-state image sensor according to the present invention is applied to a frame transfer type CCD image sensor will be described below.
The differences from the embodiment will be mainly described with reference to the drawings.

In the above embodiment, the base film of the partition wall 30 arranged at the boundary of the color filter is shared with the color filter. In other words, the partition walls 30 arranged at the boundaries of the color filters were formed on the interlayer insulating film 22. On the other hand, in the present embodiment, the partition walls arranged at the boundaries of the color filters are formed so as to extend to a partial region above the interlayer insulating film.

FIG. 3 shows a sectional structure of the image pickup portion of the CCD image sensor according to this embodiment. In FIG. 3, the same members as those shown in FIG. 1 are designated by the same reference numerals.

As shown in FIG. 3, the partition wall 35 penetrates the interface between the color filter 24 and the interlayer insulating film 22,
It extends to the inside of the interlayer insulating film 22. Since the partition walls 35 arranged at the boundaries of the color filters 24 that transmit light of different wavelengths are formed to extend toward the light receiving pixel side of the color filter 24, light is incident on the adjacent light receiving pixels. The light is further suppressed, and the light collecting performance is further improved.

Now, the manufacturing process of the CCD image sensor according to this embodiment will be described with reference to FIG.

In this series of steps, first, referring to FIG.
After the interlayer insulating film 22 is formed by the process shown in FIG. 4A, a resist 70 is laminated on the interlayer insulating film 22 as shown in FIG. Then, this resist 70
The resist 70 is removed on the boundary of each pixel (light receiving pixel) by performing lithography processing and etching processing on the opening 7
1 is formed.

Next, as shown in FIG. 4B, the opening 7
The interlayer insulating film 22 is dry-etched (anisotropic etching) using the resist 70 formed with No. 1 as a mask to form a groove 80 in the region of the surface (upper part) of the interlayer insulating film 22. Further, after this, the resist 70 is removed.

Then, the interlayer insulating film 2 in which the groove 80 is formed
A metal layer 35 'is laminated on the second layer by sputtering. Then, the metal layer 35 'is heat-treated to flatten its surface. Then, after this, FIG. 2B to FIG.
The CCD image sensor shown in FIG. 3 is formed by the same process as that shown in FIG.

According to the present embodiment described above, it is possible to obtain the effects similar to the above-mentioned effects (1) to (3) of the first embodiment. Particularly, by forming the partition wall 35 so as to extend through the boundary between the color filter 24 and the interlayer insulating film 22 and extend to the interlayer insulating film 22, it is possible to more suitably prevent light from being incident on the adjacent light receiving pixels. At the same time, it is possible to further improve the light collecting performance.

The above-described embodiments may be modified and implemented as follows.

The material of the partition wall 30 is not limited to aluminum and may be any metal material. However, in this case, it is preferable that the incident light is almost totally reflected. Further, it is desirable that this reflection be a reflection having an equal incident angle and the same reflection angle.

The material of the partition wall 30 is not limited to the metal material,
It may be a carbon material, for example, black carbon. In this case, since the carbon material does not have the property of reflecting light, it is not possible to improve the light collecting performance, but it is possible to sufficiently block light or reduce transmitted light. This can greatly contribute to the prevention of mixing of obliquely incident light.

The shape of the partition wall 30 is not limited to that shown in FIG. For example, even if it is trapezoidal,
It is possible to prevent the obliquely incident light from entering the adjacent light receiving pixels and to clearly set the boundaries between the color filters.

The arrangement of the color filters is not limited to that illustrated in FIG. 1 (b). For example, the R, G, and B color filters may be arranged in a stripe shape, and in this case, the partition wall 30 may be formed in a stripe shape so as to partition the adjacent color filters.

The color filter is not limited to the three primary colors of red (R), green (G) and blue (B), and may be any one that transmits light of a specific wavelength.

When etching the metal layer 30 ', the resist may be directly used as a mask without using the inorganic film 60.

The base film of the color filter is not limited to the acrylic layer or the above-mentioned interlayer insulating film, but may be a light-transmitting protective film that flattens the surface on which the color filter is formed.

As the structure of the CCD image sensor,
It may be appropriately changed within a range including the partition walls 30 and 35 that partition the color filters 24 that transmit different primary color lights.

The solid-state image pickup device is not limited to the frame transfer type CCD image sensor, but may be, for example, an interline type.

[0054]

According to the present invention, since the partition wall having a sufficiently lower light transmittance than the filter is provided at the boundary of the color segments which transmit light of different wavelengths, obliquely incident light is adjacent. The problem of incidence on the light receiving pixel can be preferably avoided. In addition, since the color segments are partitioned by partition walls, the boundaries between the respective segments can be clearly set.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a first embodiment in which a solid-state image sensor according to the present invention is applied to a frame transfer type CCD image sensor.

FIG. 2 is a cross-sectional view showing a manufacturing process of the same embodiment.

FIG. 3 is a diagram showing a configuration of a second embodiment in which a solid-state image sensor according to the present invention is applied to a frame transfer type CCD image sensor.

FIG. 4 is a cross-sectional view showing the manufacturing process of the same embodiment.

FIG. 5 is a block diagram showing a configuration of a frame transfer type CCD image sensor.

FIG. 6 is a plan view showing a configuration of an imaging unit of the frame transfer type CCD image sensor.

FIG. 7 is a cross-sectional view showing a configuration of an imaging unit of the frame transfer type CCD image sensor.

[Explanation of symbols]

10 ... Semiconductor substrate, 11 ... P well, 12 ... Channel,
13 ... Channel isolation region, 20 ... Gate insulating film, 21 ...
Gate electrode, 22 ... Interlayer insulating film, 23 ... Acrylic layer, 2
4 ... Color filter, 25 ... Flattening layer, 30 ... Partition wall, 5
0 ... Lens, 60 ... Inorganic film, 61 ... Resist.

Continued front page    F term (reference) 2H048 BA02 BB02 BB08 BB10 BB42                 4M118 AA10 AB01 BA12 BA13 CA03                       DB07 EA01 FA06 FA38 GA09                       GC08 GC14                 5C024 AX01 CY47 DX01 EX52 GX22                       GY03                 5F049 MA02 NA10 NB03 NB05 PA20                       RA02 RA10 SZ08 SZ20 WA03

Claims (9)

[Claims] 1. A semiconductor substrate, a plurality of light receiving pixels formed on one main surface of the semiconductor substrate, and a plurality of segments arranged on the plurality of light receiving pixels, the segments transmitting light having different wavelengths from each other regularly. And a color filter arranged in a line, the partition wall having a transmissivity sufficiently lower than that of the segment region is arranged at a boundary of the plurality of segments. 2. The solid-state imaging device according to claim 1, further comprising an interlayer insulating film between the plurality of light receiving pixels and the color filter, wherein the partition wall extends to a part of the interlayer insulating film. A solid-state imaging device characterized by being extended. 3. The solid-state imaging device according to claim 1, wherein the partition wall is formed of a metal material and has a property of reflecting light. 4. The solid-state imaging device according to claim 3, further comprising a metal wiring arranged outside a light receiving region in which the plurality of light receiving pixels are formed, wherein the partition wall is the same as the metal wiring. A solid-state image sensor formed by a process. 5. The solid-state imaging device according to claim 1, wherein the partition wall is made of a carbon material. 6. A method of manufacturing a solid-state imaging device having a color filter mounted, wherein a plurality of light receiving pixels are formed on one main surface of a semiconductor substrate.
And a second step of laminating a low light-transmitting film having a transmittance sufficiently lower than that of the color filter on the plurality of light receiving pixels, and each of the light receiving films on the low light transmitting film. A third step of forming a mask covering the boundaries of the pixels, and etching the low light-transmitting film according to the mask to leave the low light-transmitting film on the boundaries of the light receiving pixels. And a fourth step of forming partition walls, and stacking a color resist that transmits specific light on the plurality of light receiving pixels, and selectively etching the color filters according to regions partitioned by the partition walls to form the color filters. Forming Fifth
And a step of manufacturing the solid-state image sensor. 7. A method of manufacturing a solid-state imaging device having a color filter mounted, wherein a first light-receiving pixel is formed on one main surface of a semiconductor substrate.
And the step of forming an insulating film with a predetermined thickness on the semiconductor substrate.
And forming a first mask having an opening on the boundary of each of the light receiving pixels on the insulating film, etching the insulating film according to the first mask, and receiving the plurality of light receiving films on the insulating film. A third step of forming a groove corresponding to an array of pixels, a fourth step of forming a low light-transmitting film having a light transmittance sufficiently lower than that of the color filter on the insulating film, A second mask is formed on the low light-transmitting film so as to cover the boundary of each of the light-receiving pixels, and the low-light-transmitting film is etched according to the second mask to form the boundary of each of the light-receiving pixels. A fifth method for forming partition walls by leaving the low light-transmissive film above.
And a fifth step of forming a color filter by laminating a color resist that transmits specific light on the insulating film and selectively etching it according to a region partitioned by the partition wall. A method for manufacturing a solid-state imaging device, comprising: 8. The method for manufacturing a solid-state imaging device according to claim 6 or 7, wherein the low light-transmitting film is made of a metal material. 9. The method for manufacturing a solid-state imaging device according to claim 6, wherein the low light-transmitting film is made of a carbon material.