JP2003324249A - Surface-emitting semiconductor laser and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser capable of reducing the resistance of a current without increasing light absorption and to provide a method for manufacturing the semiconductor laser. <P>SOLUTION: In the surface-emitting semiconductor laser, an optical resonator 11a is constituted by holding a light emitting layer 3 between a 1st multilayer semiconductor film mirror 2 and a 2nd multilayer semiconductor film mirror 4 reversely conductive to that of the 1st mirror 2, and is cylindrically laminated on the surface of an insulating substrate 50. A 1st buried layer 12a having the same conductive type as that of the 1st mirror 2 is brought into contact with a 2nd buried layer 16 having the same conductive type as that of the 2nd mirror 4, in an interface parallel with the side faces of the resonator 11a. These two are also brought into contact with side faces of the resonator 11a to surround the side faces of the resonator 11a. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting semiconductor laser which emits a laser beam in a direction perpendicular to a substrate surface and a method for manufacturing the same, and more specifically, a p-type and an n-type sandwiching a light emitting layer. The present invention relates to a surface-emitting type semiconductor laser having a structure in which carriers are laterally injected into a multilayer semiconductor film mirror and a method for manufacturing the same.

[0002]

2. Description of the Related Art Substrate surface (principal surface on which a laser element is formed)
The surface-emitting type semiconductor laser that emits laser light perpendicularly to the above has an oscillation threshold current that is smaller than that of the edge-emitting type semiconductor laser by about one digit and is superior in that it can be two-dimensionally highly integrated. It has features and expectations are increasing mainly for applications in optical communication. Among them, the optical resonator is also a vertical cavity surface emitting type (VCSEL; Vertical Cavity Surface Emitting).
A surface-emitting type semiconductor laser called a laser will be described below. This is a multilayer semiconductor film mirror (DBR; Distributed Bragg Refl
ector) is occupied. For the multilayer semiconductor film mirror, usually, two kinds of semiconductor materials having different refractive indexes are used at 1 / wavelength of the oscillation wavelength.
A multilayer film is used, which is alternately laminated with a thickness of four wavelengths.

The structure and manufacturing method of a conventional surface emitting laser will be described below with reference to FIGS.

First, as shown in FIG. 16, MOCVD (Metal
Organic Chemical Vapor Deposition) method or MBE
(Molecular Beam Epitaxy) and other crystal growth methods,
On the main surface of the n-type semiconductor substrate 1, the n-type multilayer semiconductor film mirror 2, the light emitting layer 3, and the p-type multilayer semiconductor film mirror 4 are grown in order. As a result, an optical resonator formed by vertically sandwiching the light emitting layer 3 between the n-type multilayer semiconductor film mirror 2 and the p-type multilayer semiconductor film mirror 4 is formed perpendicularly to the main surface of the n-type semiconductor substrate 1. .

The n-type semiconductor substrate 1 is made of n-type GaAs, for example. The n-type multilayer semiconductor film mirror 2 includes, for example, n-type AlAs and n-type
A heterojunction layer of type AlGaAs is set as one pair and is formed by laminating several tens of pairs. p-type multilayer semiconductor film mirror 4
Is formed by stacking several tens of pairs of p-type AlAs and p-type AlGaAs heterojunction layers as one pair. The light emitting layer 3 is formed by vertically sandwiching a GaAs well (well layer) with AlGaAs.

After the crystal growth of the optical resonator, usually, as disclosed in, for example, Japanese Patent Laid-Open No. 2000-196189,
A current constriction structure is formed. As shown in FIG. 17, ion implantation of H ⁺ or the like is performed using the mask 6 formed on the upper surface of the portion to be the laser light emitting portion as a mask, and a high temperature is generated around the laser light emitting portion. The resistance region 5 is formed. As a result, the current density is locally increased at the laser light emitting portion during operation.

Thereafter, as shown in FIG. 18, a p-side electrode (metal film) 7 which makes ohmic contact with the p-type multilayer semiconductor film mirror 4 and an n electrode which makes ohmic contact with the n-type semiconductor substrate 1.
The side electrode (metal film) 8 is formed. The p-side electrode 7 is formed, for example, by a vapor deposition method by forming an opening (aperture) 7a on the upper surface of the optical resonator. The n-side electrode 8 is formed on the entire back surface of the n-type semiconductor substrate 1 by, for example, a vapor deposition method. Note that FIG. 20 is a plan view of FIG. 19 seen from above.

In the surface-emitting type semiconductor laser configured as described above, when a forward voltage is applied through both electrodes 7 and 8 as shown in FIG. Holes are injected into the light emitting layer 3 as shown by the arrow h, and the n-type semiconductor substrate 1 and the n-type multilayer semiconductor film mirror 2 are formed.
From this, electrons are injected into the light emitting layer 3 as shown by the arrow e. As a result, the laser light L having a wavelength determined by the optical resonator length is emitted upward through the opening 7a formed in the p-side electrode 7.

[0009]

In the conventional surface-emitting type semiconductor laser as described above, carriers are emitted from the light-emitting layer 3 through the multilayer semiconductor film mirrors 2 and 4 having a large number of hetero barriers.
However, there is a problem that the resistance becomes large because it is injected into. In particular, holes, which are carriers on the p-side, have a mobility as small as 1/10 or less as compared with electrons, so that the resistance becomes particularly large on the p-side. Further, as in the above configuration, the laser light L
If the p-side electrode 7 overlaps with the p-side electrode 7, the p-side electrode 7 is partially removed to form the opening 7a that allows the laser light L to be emitted. Therefore, the p-side electrode 7 and p
The contact portion 9 with the type multi-layer semiconductor film mirror 4 has a narrow ring shape (see FIG. 19) to increase the contact resistance.

Incidentally, the AlAs layer constituting the p-type multilayer semiconductor film mirror 4 and the interface between the AlAs layer and the AlGaAs layer are doped with high concentration, for example, Zn, so that the carrier concentration in the p-type multilayer semiconductor film mirror 4 is increased. There is a method of increasing the resistance to lower the resistance. However, if the carrier concentration is increased by doping with Zn or the like, light absorption will increase. The increase in the amount of absorbed light causes an increase in the oscillation threshold current and a decrease in the light emission efficiency, resulting in an increase in the drive current, that is, an increase in the power consumption. Further, the doping of impurities is difficult to control and reproducibility, and there is a problem that variations in characteristics are caused.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a surface-emitting type semiconductor laser which realizes a reduction in current resistance without increasing light absorption and a method for manufacturing the same. It is in.

[0012]

The above-mentioned problems are solved by sandwiching the light emitting layer between the first multilayer semiconductor film mirror and the second multilayer semiconductor film mirror of the opposite conductivity type with the first multilayer semiconductor film mirror. The optical resonator is laminated on an insulating substrate in a columnar shape, and has a first buried layer of the same conductivity type as the first multilayer semiconductor film mirror and a second buried layer of the same conductivity type as the second multilayer semiconductor film mirror.
A surface-emitting type semiconductor laser in which the buried layer of the optical resonator is in contact with each other with a plane parallel to the side surface of the optical resonator as a boundary surface, and is also in contact with the side surface of the optical resonator to surround the side surface,
Will be solved by.

Further, the above-mentioned problem is an optical resonator in which a light emitting layer is sandwiched between a first multilayer semiconductor film mirror and a second multilayer semiconductor film mirror of opposite conductivity type to the first multilayer semiconductor film mirror. On the insulating substrate, a step of selectively etching the optical resonator into a columnar shape, and a first buried layer of the same conductivity type as that of the first multilayer semiconductor film mirror, A step of forming the side surface of the optical resonator so as to surround the side surface, a step of selectively etching the first buried layer to partially expose the side surface of the optical resonator; and a step of exposing the exposed optical resonator. And a step of covering a side surface with a second buried layer of the same conductivity type as the second multilayer semiconductor film mirror.

As the first multilayer semiconductor film mirror, for example, n
If a p-type multi-layer semiconductor film mirror is used as the second multi-layer semiconductor film mirror, for example, a p-type multi-layer semiconductor film mirror is considered, an n-type multi-layer semiconductor film mirror is provided on the side surface of these n and p-type multi-layer semiconductor film mirrors. The n-type buried layer of the same conductivity type is the first
As the second buried layer, a p-type buried layer of the same conductivity type as the p-type multilayer semiconductor film mirror is in contact as a second buried layer.

With such a structure, electrons can be injected from the side surface of the portion of the n-type multi-layer semiconductor film mirror which is in contact with the n-type buried layer, so that the p-type multi-layer semiconductor film mirror has the same structure. Holes can be injected from the side surface side of the portion in contact with the p-type buried layer. As a result, the electrons and holes do not have to pass through a large number of hetero barriers, which are resistances for the electrons and holes, for a long distance, and the resistance can be reduced.

Of course, if the first multilayer semiconductor film mirror is
Type multi-layer semiconductor film mirror, the second multi-layer semiconductor film mirror is an n-type multi-layer semiconductor film mirror, the first buried layer is a p-type buried layer, and the second buried layer is n-type.
The above can be said when it is considered as a buried layer of the mold.

The optical resonator is formed in a columnar shape such as a prism or a cylinder so that the function of current confinement can be realized. If the optical resonator and buried layer are epitaxially grown by MOCVD or MBE, a surface emitting semiconductor laser with good laser characteristics can be obtained.

Surface emitting semiconductor lasers of various wavelengths can be formed by selecting the semiconductor material of each layer forming the optical resonator. For example, in the case of GaAs, a multilayer semiconductor film mirror that can be epitaxially grown on a GaAs substrate and has a small absorption at the oscillation wavelength of AlAs /
Generally, (Al) GaAs multilayer film is used. InP system allows epitaxial growth on InP system substrate
Although an InGaAsP / InP multilayer film can be used, the difference in the refractive index is very small and it is difficult to obtain a high reflectance. Therefore, other materials such as SiO ₂ / Si multilayer film and Al ₂ O ₃ / Si multilayer film can be used. Sometimes used. When the optical resonator is of GaAs type, it is possible to obtain a defect-free embedded layer when the embedded layer is also of GaAs type. Similarly, when the optical resonator is an InP-based optical cavity, it is possible to obtain a defect-free embedded layer by using an InP-based embedded layer as well.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 11 is a top view of a surface emitting semiconductor laser 21 according to the first embodiment, and FIG. 12 is taken along line [12]-[12] in FIG. A sectional view is shown.

After growing an optical resonator including the light emitting layer (active region) 3 on the insulating substrate 50, selective etching is performed to form a prismatic optical resonator 11a. The optical resonator 11a is
The light emitting layer 3 is vertically sandwiched between an n-type multilayer semiconductor film mirror 2 as a first multilayer semiconductor film mirror and a p-type multilayer semiconductor film mirror 4 as a second multilayer semiconductor film mirror. The optical resonator 11a is surrounded by an n-type buried layer 12a as a first buried layer and a p-type buried layer 16 as a second buried layer. The n-type buried layer 12a and the p-type buried layer 13 are both optical resonators 11a.
Touches the side of. As shown in FIG. 11, the n-type buried layer 12a and the p-type buried layer 13 are planes including one side surface 15 of the four side surfaces of the rectangular column-shaped optical resonator 11a (a plane flush with the side surface 15). ) Are in contact with each other as a boundary surface.

A method of manufacturing the surface-emitting type semiconductor laser 21 according to this embodiment will be specifically described below.

First, as shown in FIG. 1, an n-type multilayer semiconductor film mirror 2, a light emitting layer 3, and a p-type multilayer semiconductor film mirror 4 are epitaxially grown in order on an insulating substrate 50. Thereby, the optical resonator 1 in which the light emitting layer 3 is vertically sandwiched between the n-type multilayer semiconductor film mirror 2 and the p-type multilayer semiconductor film mirror 4
1 is formed perpendicular to the main surface of the insulating substrate 50.

The insulating substrate 50 is, for example, non-doped GaAs.
It consists of Alternatively, chrome copper or the like may be used. The n-type multi-layer semiconductor film mirror 2 includes, for example, n-type AlAs and n-type AlGaAs.
The heterojunction layer of 1 is set as one pair, and several tens of pairs are laminated and configured. The p-type multilayer semiconductor film mirror 4 includes, for example, a heterojunction layer of p-type AlAs and p-type AlGaAs as one pair,
This is formed by stacking several tens of pairs. The Al mixed crystal ratio of the AlGaAs layers in the n-type and p-type multilayer semiconductor film mirrors 2 and 4 is, for example,
It is 0.1. The light emitting layer 3 has, for example, a GaAs well (well layer) vertically sandwiched by AlGaAs to have a total thickness of a wavelength size.

As the epitaxial growth method, for example, a methyl-based MOCVD method is used. More specifically, II
CVD is performed using trimethylgallium and trimethylaluminum as a group I element gas source, AsH ₃ as a group V element gas source, H ₂ Se as an n-type dopant, and diethyl zinc as a p-type dopant. .
Of course, another crystal growth method, for example, MBE method may be used.

Next, a mask 25 made of an insulating film or the like is formed in a square area on the upper surface of the optical resonator 11, and RIE (Reactive Ion Etching) is performed using the mask 25 as a mask.
Etching is performed by using such a method. As a result, as shown in FIG. 2, the optical resonator 11a having a quadrangular prism shape is formed. Note that the mask 25 is left on the upper surface of the optical resonator 11a (p-type multilayer semiconductor film mirror 4) even after etching by the RIE method. In the following, the mask 25 is shaded in the drawings.

Next, as shown in FIG. 3, the insulating substrate 50
The n-type buried layer 12 is epitaxially grown on the upper surface of the n-type buried layer 12 to a height substantially equal to that of the mask 25. The n-type buried layer 12 is made of, for example, n-type AlGaAs. As a result, the n-type buried layer 12 is in contact with and surrounds all side surfaces of the optical resonator 11a. If the MOCVD method is used as the crystal growth method at this time, a good crystal plane without defects can be formed.

Subsequently, an n-type contact layer 13 (made of, for example, n-type GaAs) is formed on the n-type buried layer 12 by MOCVD.
The crystal is grown by the method.

Subsequently, the mask 14 is partially (on the right side of the side surface 15 on the left end side of the optical resonator 11a) formed on the n-type contact layer 13. The mask 14 is formed such that its left end side surface is flush with the left end side surface 15 of the optical resonator 11a. In addition, the optical resonator 11a
The mask 25 formed above is covered with the mask 14.

Then, using the mask 14 as a mask,
The n-type contact layer 13 and the n-type buried layer 12 are sequentially etched until the upper surface of the insulating substrate 50 is exposed. For this etching, for example, the RIE method is used. As a result, as shown in FIG. 5, the left end side surface 15 of the optical resonator 11a is exposed. The remaining n-type buried layer 12a is
The optical resonator 11a is in contact with and covers three side surfaces other than the side surface 15.

Subsequently, as shown in FIG. 6, with the mask 14 left as it is, the mask 14 is used as a mask.
On the insulating substrate 50, the p-type buried layer 16 is epitaxially grown to a height substantially the same as the n-type buried layer 12a. The p-type buried layer 16 is made of p-type AlGaAs, for example. As a result, the p-type buried layer 16 becomes the optical resonator 11
The side surface 15 is covered by being in contact with the left side surface 15 of a. If the MOCVD method is used as the crystal growth method at this time, a good crystal plane without defects can be formed.

Then, a p-type contact layer 17 (made of, for example, p-type GaAs) is formed on the p-type buried layer 16 by MOCVD.
The crystal is grown by the method. At this time, the n-type contact layer 13
Since the boundary between a and the p-type contact layer 17 is in the [011] direction, the optical resonator 1 of the p-type contact layer 17 is
When grown above 1a, the {111} B plane is formed, and the p-type region and the n-type region can be clearly separated and grown.

Next, the mask 14 and the mask 25 are removed, and the state shown in FIG. 7 is obtained. Subsequently, the contact layers 13 and 17 are patterned into a rectangular shape by a lithography technique, and then the portions other than the rectangular pattern are removed by wet etching. As a result, FIG.
As shown in FIG.
The p-type contact layer 13 a ′ and the p-type contact layer 17 ′ are partially formed on the p-type buried layer 16.

Then, as shown in FIG. 9, an n-side electrode (metal film) 19 is formed on the n-type contact layer 13a ', and a p-side electrode (metal film) 18 is formed on the p-type contact layer 17'. , Are each formed by the vapor deposition method. Of course, the electrodes 18, 1
9 is not limited to the vapor deposition method and may be formed by the sputtering method or the like.

Finally, as shown in FIG. 10, the n-side electrode 1
Wire bonding is performed on each of the 9 and the p-side electrode 18 with, for example, a gold wire, and the surface emitting semiconductor laser 21 according to the present embodiment is obtained.

In the surface-emitting type semiconductor laser 21 constructed as described above, as shown in FIG.
When a voltage is applied to the electrodes 18 and 19 so that a forward voltage is applied to a, the p-type multilayer semiconductor film mirror 4 has p
Holes are injected from the mold burying layer 16 as shown by an arrow h to reach the light emitting layer 3. In the n-type multilayer semiconductor film mirror 2, electrons are injected from the n-type buried layer 12a as shown by an arrow e to reach the light emitting layer 3. Note that the bonding wire 20 shown in FIG. 10 is omitted in FIG.

As is apparent from FIG. 11, holes are injected from one side surface 15 side of the optical resonator 11a, and electrons are injected from three side surface sides other than the side surface 15 of the optical resonator 11a.

As a result, light is generated by the recombination of holes and electrons in the light emitting layer 3, and the light is amplified while being reflected between the multilayer semiconductor film mirrors 2 and 4, and the optical resonator 11a.
A laser beam L is emitted from the upper surface of the. Since the substrate 50 on which the p and n buried layers 16 and 12a are formed is an insulating substrate, a current does not flow between the p and n buried layers 16 and 12a through the substrate 50, and the pn junction of the light emitting layer 3 is formed. A current flows through the device, and a good light emitting action can be performed.

As described above, in this embodiment, holes and electrons are injected into the p, n multilayer semiconductor film mirrors 4 and 2 from the lateral direction (side surface side of the p and n multilayer semiconductor film mirrors 4 and 2). Therefore, the distance that holes and electrons pass through the hetero barrier of the p and n multilayer semiconductor film mirrors 4 and 2 can be shortened, and as a result, the resistance of the p and n multilayer semiconductor film mirrors 4 and 2 can be reduced, which is excellent. Excellent laser characteristics can be obtained. Further, although both electrodes 18 and 19 are formed on the laser light emitting side, both electrodes 18 and 19 can contact the p and n regions with a larger area than in the conventional case. , This also promotes low resistance.

Further, p, n multilayer semiconductor film mirrors 4, 2
In addition, low resistance can be realized without doping impurities in high concentration. That is, the resistance can be reduced without increasing the absorption of light in the p and n multilayer semiconductor film mirrors 4 and 2, and the increase in the oscillation threshold current and the decrease in the light emission efficiency can be prevented.

Furthermore, both electrodes 18 and 19 are both insulating substrates 5.
Since the structure is formed on the upper surface side of 0, the electrodes 18, 1
It is possible to easily form 9 itself and take out (draw out) the electrodes 18 and 19 to the outside.

(Second Embodiment) Next, the second embodiment of the present invention will be described.
The embodiment will be described. The same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

In this second embodiment, as shown in FIG. 14, the area where the p-type buried layer 28 contacts the side surface of the optical resonator 11a and the n-type buried layer 29 contacts the side surface of the optical resonator 11a. The area is almost equal.
As a result, holes and electrons can be uniformly injected into the optical resonator 11a, and as a result, the coupling efficiency of holes and electrons in the light emitting layer 3 can be increased, the oscillation threshold current can be reduced, and the emission efficiency can be increased. it can.

Such a configuration is as shown in FIG.
When partially removing the n-type buried layer 29 by etching, in addition to the side surface 15 on the left end side of the optical resonator 11a, two surfaces perpendicular to the side surface 15 are exposed by half. The n-type buried layer 29 may be etched.

In this case, however, two planes A and B having different plane indices are exposed, and therefore when the P-type buried layer 28 is epitaxially grown in contact with the exposed planes, only the side surface 15 is exposed. There is a possibility that defects may easily occur in the crystal as compared with the first embodiment in which the crystal is exposed.

Although the respective embodiments of the present invention have been described above, of course, the present invention is not limited to these.
Various modifications are possible based on the technical idea of the present invention.

As shown in FIG. 13, a p-type buried layer 26 is formed.
May contact three side surfaces of the optical resonator 11a, and the n-type buried layer 27 may contact one remaining side surface of the optical resonator 11a.

Further, in FIG. 12, by using an insulating substrate 50 which covers the upper surface of the optical resonator 11a with, for example, a metal film and is transparent to the oscillation wavelength, the insulating substrate 50 can be further used as necessary. The laser light L may be emitted from the insulating substrate 50 side by grinding from the back surface side to reduce the thickness.

[0049]

As described above, according to the present invention, carriers are injected from the side surface of the multi-layer semiconductor film mirror, and it is not necessary to pass through the multi-layer semiconductor film mirror having a large number of hetero barriers for a long distance. It becomes low and good laser characteristics can be obtained.

[Brief description of drawings]

FIG. 1 is a perspective view showing a manufacturing process (1) of a surface-emitting type semiconductor laser according to a first embodiment of the present invention.

FIG. 2 is a perspective view showing a manufacturing process (2) of the surface-emitting type semiconductor laser, following FIG. 1;

FIG. 3 is a perspective view showing a manufacturing process (3) of the surface emitting semiconductor laser, following FIG. 2;

FIG. 4 is a perspective view showing a manufacturing process (4) of the surface emitting semiconductor laser, following FIG. 3;

FIG. 5 is a perspective view showing a step (5) of manufacturing the surface emitting semiconductor laser, following FIG. 4;

FIG. 6 is a perspective view showing a manufacturing step (6) of the surface-emitting type semiconductor laser, following FIG. 5;

FIG. 7 is a perspective view showing a step (seventh) of manufacturing the surface-emitting type semiconductor laser, following FIG. 6;

FIG. 8 is a perspective view showing a manufacturing process (8) of the surface-emitting type semiconductor laser, following FIG. 7;

FIG. 9 is a perspective view showing a manufacturing step (9) of the surface-emitting type semiconductor laser, following FIG. 8;

10 is a perspective view of a surface-emitting type semiconductor laser completed in a step following that of FIG.

FIG. 11 is a plan view of a surface-emitting type semiconductor laser.

12 is a cross-sectional view taken along line [12]-[12] in FIG.

FIG. 13 is a plan view of a surface emitting semiconductor laser according to a modification of the present invention.

FIG. 14 is a plan view of a surface emitting semiconductor laser according to a second embodiment of the present invention.

FIG. 15 is a perspective view showing a manufacturing process of the surface-emitting type semiconductor laser according to the second embodiment.

FIG. 16 is a perspective view showing a manufacturing process (1) of a conventional surface-emitting type semiconductor laser.

FIG. 17 is a perspective view showing a manufacturing step (2) following FIG. 16;

FIG. 18 is a cross-sectional view of a surface-emitting type semiconductor laser of a conventional example completed in the step following FIG.

FIG. 19 is a plan view of a surface emitting semiconductor laser of the conventional example.

[Explanation of symbols]

1 ... n-type semiconductor substrate, 2 ... n-type multilayer semiconductor film mirror, 3 ... emission layer, 4 ... p-type multilayer semiconductor film mirror, 1
1a ... optical resonator, 12a ... n-type buried layer, 13
a '... n-type contact layer, 16 ... p-type buried layer,
17 '... p-type contact layer, 18 ... p-side electrode, 19
... n-side electrode, 21 ... Surface emitting semiconductor laser, 50 ...
… Insulating substrate.

Claims (6)

[Claims] 1. A light having a light emitting layer sandwiched between a first multilayer semiconductor film mirror formed on the side of an insulating substrate and a second multilayer semiconductor film mirror having an opposite conductivity type to the first multilayer semiconductor film mirror. A resonator is stacked in a columnar shape on the insulating substrate, and has a first buried layer having the same conductivity type as the first multilayer semiconductor film mirror and a first buried layer having the same conductivity type as the second multilayer semiconductor film mirror. And a second buried layer that is in contact with the side surface of the optical resonator and surrounds the side surface, and the first buried layer and the second buried layer form a surface parallel to the side surface of the optical resonator. A surface-emitting type semiconductor laser characterized by being in contact with each other as boundaries. 2. The surface emitting semiconductor laser according to claim 1, wherein the optical resonator has a quadrangular prism shape, and the boundary surface is a surface including one side surface of the quadrangular prism shape. 3. The surface emitting semiconductor laser according to claim 1, wherein the first buried layer and the second buried layer have the same area in contact with the side surface of the optical resonator. . 4. A first multilayer semiconductor film mirror, a light emitting layer, and a second multilayer semiconductor film mirror having a conductivity type opposite to that of the first multilayer semiconductor film mirror are laminated on an insulating substrate, Forming an optical resonator having a light emitting layer sandwiched between the first multilayer semiconductor film mirror and the second multilayer semiconductor film mirror; and selectively etching the optical resonator into a columnar shape. Forming a first buried layer of the same conductivity type as the first multilayer semiconductor film mirror in contact with the side surface of the optical resonator so as to surround the side surface, and selectively forming the first buried layer. And partially exposing the side surface of the optical resonator, and exposing the exposed side surface of the optical resonator to a second buried layer having the same conductivity type as the second multilayer semiconductor film mirror. A surface-emitting type semiconductor having a step of covering with a layer. Method of manufacturing a laser. 5. The optical resonator is formed in a quadrangular prism, and only one side surface of the quadrangular prism is exposed by the selective etching of the first burying layer. 4. The method for manufacturing the surface-emitting type semiconductor laser described in 4. 6. The first embedding layer of the optical cavity, wherein a portion of the side surface of the optical resonator in contact with the first embedding layer and an exposed portion have the same area. The method for manufacturing a surface-emitting type semiconductor laser according to claim 4, wherein selective etching is performed.