JP2003324249A - Surface-emitting semiconductor laser and its manufacturing method - Google Patents
Surface-emitting semiconductor laser and its manufacturing methodInfo
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- JP2003324249A JP2003324249A JP2002125856A JP2002125856A JP2003324249A JP 2003324249 A JP2003324249 A JP 2003324249A JP 2002125856 A JP2002125856 A JP 2002125856A JP 2002125856 A JP2002125856 A JP 2002125856A JP 2003324249 A JP2003324249 A JP 2003324249A
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- semiconductor film
- type
- layer
- film mirror
- optical resonator
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Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、基板面に対して垂
直な方向にレーザ光が出射される面発光型半導体レーザ
及びその製造方法に関し、更に詳しくは、発光層を挟む
p、n型の多層半導体膜ミラーに横方向からキャリアが
注入される構造を有する面発光型半導体レーザ及びその
製造方法に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting semiconductor laser which emits a laser beam in a direction perpendicular to a substrate surface and a method for manufacturing the same, and more specifically, a p-type and an n-type sandwiching a light emitting layer. The present invention relates to a surface-emitting type semiconductor laser having a structure in which carriers are laterally injected into a multilayer semiconductor film mirror and a method for manufacturing the same.
【0002】[0002]
【従来の技術】基板面(レーザ素子が形成された主面)
に対して垂直にレーザ光が出射される面発光型半導体レ
ーザは、端面発光型半導体レーザに比べて発振しきい値
電流が1桁ほど小さい、2次元的に高集積化が可能など
の優れた特長を有し、光通信への応用を中心に期待が高
まっている。中でも、光共振器も主面に対して垂直な垂
直共振器型(VCSEL;Vertical Cavity Surface Emitting
Laser)と呼ばれる面発光型半導体レーザについて以下
説明する。これは、大半の領域を光フィードバックのた
めの多層半導体膜ミラー(DBR;Distributed Bragg Refl
ector )が占めている。多層半導体膜ミラーには、通
常、2種の屈折率の異なる半導体材料を発振波長の1/
4波長の厚さで交互に積層した多層膜が用いられる。2. Description of the Related Art Substrate surface (principal surface on which a laser element is formed)
The surface-emitting type semiconductor laser that emits laser light perpendicularly to the above has an oscillation threshold current that is smaller than that of the edge-emitting type semiconductor laser by about one digit and is superior in that it can be two-dimensionally highly integrated. It has features and expectations are increasing mainly for applications in optical communication. Among them, the optical resonator is also a vertical cavity surface emitting type (VCSEL; Vertical Cavity Surface Emitting).
A surface-emitting type semiconductor laser called a laser will be described below. This is a multilayer semiconductor film mirror (DBR; Distributed Bragg Refl
ector) is occupied. For the multilayer semiconductor film mirror, usually, two kinds of semiconductor materials having different refractive indexes are used at 1 / wavelength of the oscillation wavelength.
A multilayer film is used, which is alternately laminated with a thickness of four wavelengths.
【0003】以下、図16〜図19を参照して、従来例
の面発光型レーザの構成及び製造方法について説明す
る。The structure and manufacturing method of a conventional surface emitting laser will be described below with reference to FIGS.
【0004】先ず、図16に示すように、MOCVD(Metal
Organic Chemical Vapor Deposition)法あるいはMBE
(Molecular Beam Epitaxy )法などの結晶成長法で、
n型半導体基板1の主面上に、n型多層半導体膜ミラー
2、発光層3、p型多層半導体膜ミラー4を順に成長さ
せる。これによって、発光層3をn型多層半導体膜ミラ
ー2とp型多層半導体膜ミラー4とで上下に挟んでなる
光共振器が、n型半導体基板1の主面に対して垂直に形
成される。First, as shown in FIG. 16, MOCVD (Metal
Organic Chemical Vapor Deposition) method or MBE
(Molecular Beam Epitaxy) and other crystal growth methods,
On the main surface of the n-type semiconductor substrate 1, the n-type multilayer semiconductor film mirror 2, the light emitting layer 3, and the p-type multilayer semiconductor film mirror 4 are grown in order. As a result, an optical resonator formed by vertically sandwiching the light emitting layer 3 between the n-type multilayer semiconductor film mirror 2 and the p-type multilayer semiconductor film mirror 4 is formed perpendicularly to the main surface of the n-type semiconductor substrate 1. .
【0005】n型半導体基板1は、例えばn型GaAsでな
る。n型多層半導体膜ミラー2は、例えばn型AlAsとn
型AlGaAsのヘテロ接合層を1ペアとして、これが数十ペ
ア積層されて構成される。p型多層半導体膜ミラー4
は、例えばp型AlAsとp型AlGaAsのヘテロ接合層を1ペ
アとして、これが数十ペア積層されて構成される。発光
層3は、例えばGaAsのウェル(井戸層)をAlGaAsで上下
に挟んで構成される。The n-type semiconductor substrate 1 is made of n-type GaAs, for example. The n-type multilayer semiconductor film mirror 2 includes, for example, n-type AlAs and n-type
A heterojunction layer of type AlGaAs is set as one pair and is formed by laminating several tens of pairs. p-type multilayer semiconductor film mirror 4
Is formed by stacking several tens of pairs of p-type AlAs and p-type AlGaAs heterojunction layers as one pair. The light emitting layer 3 is formed by vertically sandwiching a GaAs well (well layer) with AlGaAs.
【0006】光共振器の結晶成長後、通常、例えば特開
2000−196189号公報に示されているように、
電流狭窄構造が形成される。これは、図17に示すよう
に、レーザ光の出射部となるべき部分の上面に形成され
たマスク6をマスクとして、H+ などのイオン注入が行
われ、レーザ光の出射部の周囲に高抵抗化領域5を形成
する。これによって、動作時に、レーザ光の出射部は局
所的に電流密度が高められる。After the crystal growth of the optical resonator, usually, as disclosed in, for example, Japanese Patent Laid-Open No. 2000-196189,
A current constriction structure is formed. As shown in FIG. 17, ion implantation of H + or the like is performed using the mask 6 formed on the upper surface of the portion to be the laser light emitting portion as a mask, and a high temperature is generated around the laser light emitting portion. The resistance region 5 is formed. As a result, the current density is locally increased at the laser light emitting portion during operation.
【0007】この後、図18に示すように、p型多層半
導体膜ミラー4とオーミック接触をとるp側電極(金属
膜)7と、n型半導体基板1とオーミック接触をとるn
側電極(金属膜)8が形成される。p側電極7は、光共
振器の上面に開口(アパーチャ)7aを形成して、例え
ば蒸着法で形成される。n側電極8は、n型半導体基板
1の裏側全面に、例えば蒸着法で形成される。なお、図
20は図19を上から見た平面図である。Thereafter, as shown in FIG. 18, a p-side electrode (metal film) 7 which makes ohmic contact with the p-type multilayer semiconductor film mirror 4 and an n electrode which makes ohmic contact with the n-type semiconductor substrate 1.
The side electrode (metal film) 8 is formed. The p-side electrode 7 is formed, for example, by a vapor deposition method by forming an opening (aperture) 7a on the upper surface of the optical resonator. The n-side electrode 8 is formed on the entire back surface of the n-type semiconductor substrate 1 by, for example, a vapor deposition method. Note that FIG. 20 is a plan view of FIG. 19 seen from above.
【0008】以上のように構成される面発光型半導体レ
ーザにおいて、両電極7、8を介して、図18に示すよ
うに、順方向の電圧をかけると、p型多層半導体膜ミラ
ー4からはホールが矢印hで示すように発光層3に注入
され、n型半導体基板1及びn型多層半導体膜ミラー2
からは電子が矢印eで示すように発光層3に注入され
る。これによって、光共振器長によって決定される波長
のレーザ光Lが、p側電極7に形成された開口7aを通
って上方へと出射される。In the surface-emitting type semiconductor laser configured as described above, when a forward voltage is applied through both electrodes 7 and 8 as shown in FIG. Holes are injected into the light emitting layer 3 as shown by the arrow h, and the n-type semiconductor substrate 1 and the n-type multilayer semiconductor film mirror 2 are formed.
From this, electrons are injected into the light emitting layer 3 as shown by the arrow e. As a result, the laser light L having a wavelength determined by the optical resonator length is emitted upward through the opening 7a formed in the p-side electrode 7.
【0009】[0009]
【発明が解決しようとする課題】以上のような従来の面
発光型半導体レーザでは、多数のヘテロ障壁を有する多
層半導体膜ミラー2、4を通して、キャリアを発光層3
に注入するため抵抗が大きくなるという問題がある。特
に、p側のキャリアであるホールは電子に比べて移動度
が1/10以下と小さいため、p側で特に抵抗が大きく
なってしまう。更に、上述の構成のように、レーザ光L
の取り出し側とp側電極7とが重なる場合には、レーザ
光Lの出射を許容する開口7aを形成するためp側電極
7を部分的に除去している。このため、p側電極7とp
型多層半導体膜ミラー4との接触部9は狭いリング状と
なり(図19参照)、接触抵抗を高くしている。In the conventional surface-emitting type semiconductor laser as described above, carriers are emitted from the light-emitting layer 3 through the multilayer semiconductor film mirrors 2 and 4 having a large number of hetero barriers.
However, there is a problem that the resistance becomes large because it is injected into. In particular, holes, which are carriers on the p-side, have a mobility as small as 1/10 or less as compared with electrons, so that the resistance becomes particularly large on the p-side. Further, as in the above configuration, the laser light L
If the p-side electrode 7 overlaps with the p-side electrode 7, the p-side electrode 7 is partially removed to form the opening 7a that allows the laser light L to be emitted. Therefore, the p-side electrode 7 and p
The contact portion 9 with the type multi-layer semiconductor film mirror 4 has a narrow ring shape (see FIG. 19) to increase the contact resistance.
【0010】なお、p型多層半導体膜ミラー4を構成す
るAlAs層や、AlAs層とAlGaAs層との界面に高濃度に例え
ばZnをドーピングして、p型多層半導体膜ミラー4中の
キャリア濃度を高くして低抵抗化する方法がある。しか
し、Znなどのドーピングによりキャリア濃度上げると光
の吸収が多くなってしまう。光の吸収量の増大は、発振
しきい値電流の増大や発光効率の低下を引き起こし、こ
の結果、駆動電流の増大、すなわち消費電力の増大を招
く。また、不純物のドーピングは、その制御性や再現性
が難しく、特性のばらつきを招くといった問題もある。Incidentally, the AlAs layer constituting the p-type multilayer semiconductor film mirror 4 and the interface between the AlAs layer and the AlGaAs layer are doped with high concentration, for example, Zn, so that the carrier concentration in the p-type multilayer semiconductor film mirror 4 is increased. There is a method of increasing the resistance to lower the resistance. However, if the carrier concentration is increased by doping with Zn or the like, light absorption will increase. The increase in the amount of absorbed light causes an increase in the oscillation threshold current and a decrease in the light emission efficiency, resulting in an increase in the drive current, that is, an increase in the power consumption. Further, the doping of impurities is difficult to control and reproducibility, and there is a problem that variations in characteristics are caused.
【0011】本発明は上述の問題に鑑みてなされ、その
目的とするところは、光の吸収は増大させることなく電
流の低抵抗化を実現した面発光型半導体レーザ及びその
製造方法を提供することにある。The present invention has been made in view of the above problems, and an object of the present invention is to provide a surface-emitting type semiconductor laser which realizes a reduction in current resistance without increasing light absorption and a method for manufacturing the same. It is in.
【0012】[0012]
【課題を解決するための手段】以上の課題は、第1の多
層半導体膜ミラーと、その第1の多層半導体膜ミラーと
逆導電型の第2の多層半導体膜ミラーとで発光層を挟ん
で成る光共振器が、絶縁基板上に柱状に積層されてお
り、第1の多層半導体膜ミラーと同導電型の第1の埋め
込み層と、第2の多層半導体膜ミラーと同導電型の第2
の埋め込み層とが、光共振器の側面に平行な面を境界面
として互いに接して、且つそれぞれが光共振器の側面に
も接してその側面を囲んでいる面発光型半導体レーザ、
によって解決される。The above-mentioned problems are solved by sandwiching the light emitting layer between the first multilayer semiconductor film mirror and the second multilayer semiconductor film mirror of the opposite conductivity type with the first multilayer semiconductor film mirror. The optical resonator is laminated on an insulating substrate in a columnar shape, and has a first buried layer of the same conductivity type as the first multilayer semiconductor film mirror and a second buried layer of the same conductivity type as the second multilayer semiconductor film mirror.
A surface-emitting type semiconductor laser in which the buried layer of the optical resonator is in contact with each other with a plane parallel to the side surface of the optical resonator as a boundary surface, and is also in contact with the side surface of the optical resonator to surround the side surface,
Will be solved by.
【0013】また、以上の課題は、発光層を第1の多層
半導体膜ミラーと、この第1の多層半導体膜ミラーと逆
導電型の第2の多層半導体膜ミラーとで挟んで成る光共
振器を絶縁基板上に形成する工程と、その光共振器を選
択的にエッチングして柱状にする工程と、第1の多層半
導体膜ミラーと同導電型の第1の埋め込み層を、光共振
器の側面を囲むようにその側面に接して形成する工程
と、第1の埋め込み層を選択的にエッチングして、光共
振器の側面を部分的に露出させる工程と、その露出され
た光共振器の側面を、第2の多層半導体膜ミラーと同導
電型の第2の埋め込み層で覆う工程とを有することを特
徴とする面発光型半導体レーザの製造方法、によって解
決される。Further, the above-mentioned problem is an optical resonator in which a light emitting layer is sandwiched between a first multilayer semiconductor film mirror and a second multilayer semiconductor film mirror of opposite conductivity type to the first multilayer semiconductor film mirror. On the insulating substrate, a step of selectively etching the optical resonator into a columnar shape, and a first buried layer of the same conductivity type as that of the first multilayer semiconductor film mirror, A step of forming the side surface of the optical resonator so as to surround the side surface, a step of selectively etching the first buried layer to partially expose the side surface of the optical resonator; and a step of exposing the exposed optical resonator. And a step of covering a side surface with a second buried layer of the same conductivity type as the second multilayer semiconductor film mirror.
【0014】第1の多層半導体膜ミラーとして例えばn
型の多層半導体膜ミラーを、第2の多層半導体膜ミラー
として例えばp型の多層半導体膜ミラーを考えると、こ
れらn、p型の多層半導体膜ミラー側面には、n型の多
層半導体膜ミラーと同導電型のn型の埋め込み層が第1
の埋め込み層として、更にp型の多層半導体膜ミラーと
同導電型のp型の埋め込み層が第2の埋め込み層として
接している。As the first multilayer semiconductor film mirror, for example, n
If a p-type multi-layer semiconductor film mirror is used as the second multi-layer semiconductor film mirror, for example, a p-type multi-layer semiconductor film mirror is considered, an n-type multi-layer semiconductor film mirror is provided on the side surface of these n and p-type multi-layer semiconductor film mirrors. The n-type buried layer of the same conductivity type is the first
As the second buried layer, a p-type buried layer of the same conductivity type as the p-type multilayer semiconductor film mirror is in contact as a second buried layer.
【0015】このような構成のため、n型の多層半導体
膜ミラーにおけるn型の埋め込み層が接している部分に
は、その側面側から電子の注入が可能となり、p型の多
層半導体膜ミラーにおけるp型の埋め込み層が接してい
る部分には、その側面側からホールの注入が可能とな
る。この結果、電子やホールは、電子やホールにとって
抵抗となる多数のヘテロ障壁を長い距離通らなくて済み
抵抗を低くできる。With such a structure, electrons can be injected from the side surface of the portion of the n-type multi-layer semiconductor film mirror which is in contact with the n-type buried layer, so that the p-type multi-layer semiconductor film mirror has the same structure. Holes can be injected from the side surface side of the portion in contact with the p-type buried layer. As a result, the electrons and holes do not have to pass through a large number of hetero barriers, which are resistances for the electrons and holes, for a long distance, and the resistance can be reduced.
【0016】もちろん、第1の多層半導体膜ミラーをp
型の多層半導体膜ミラーとして、第2の多層半導体膜ミ
ラーをn型の多層半導体膜ミラーとして、第1の埋め込
み層をp型の埋め込み層として、第2の埋め込み層をn
型の埋め込み層として考えた場合にも、上述のことは言
える。Of course, if the first multilayer semiconductor film mirror is
Type multi-layer semiconductor film mirror, the second multi-layer semiconductor film mirror is an n-type multi-layer semiconductor film mirror, the first buried layer is a p-type buried layer, and the second buried layer is n-type.
The above can be said when it is considered as a buried layer of the mold.
【0017】光共振器は、電流狭窄の機能を実現できる
ように角柱や円柱などの柱状に形成される。光共振器や
埋め込み層は、MOCVD 法やMBE 法などにてエピタキシャ
ル成長させれば、良好なレーザ特性の面発光型半導体レ
ーザが得られる。The optical resonator is formed in a columnar shape such as a prism or a cylinder so that the function of current confinement can be realized. If the optical resonator and buried layer are epitaxially grown by MOCVD or MBE, a surface emitting semiconductor laser with good laser characteristics can be obtained.
【0018】光共振器を構成する各層の半導体材料の選
択によって様々な波長の面発光型半導体レーザを構成す
ることが可能である。例えば、GaAs系の場合には、多層
半導体膜ミラーとしてはGaAs系の基板上にエピタキシャ
ル成長が可能で、発振波長に対して吸収の少ないAlAs/
(Al)GaAs多層膜を用いるのが一般的である。InP 系の
場合には、InP 系基板上にエピタキシャル成長が可能な
InGaAsP/InP多層膜を用いることができるが、その屈折
率差が非常に小さく高反射率が得にくいため、他の材
料、例えば、SiO2/Si多層膜や、Al2O3 /Si多層膜など
が用いられることもある。光共振器がGaAs系の場合に
は、埋め込み層もGaAs系とした方が欠陥のない埋め込み
層を得ることができる。同様に、光共振器がInP 系の場
合には、埋め込み層もInP 系とした方が欠陥のない埋め
込み層を得ることができる。Surface emitting semiconductor lasers of various wavelengths can be formed by selecting the semiconductor material of each layer forming the optical resonator. For example, in the case of GaAs, a multilayer semiconductor film mirror that can be epitaxially grown on a GaAs substrate and has a small absorption at the oscillation wavelength of AlAs /
Generally, (Al) GaAs multilayer film is used. InP system allows epitaxial growth on InP system substrate
Although an InGaAsP / InP multilayer film can be used, the difference in the refractive index is very small and it is difficult to obtain a high reflectance. Therefore, other materials such as SiO 2 / Si multilayer film and Al 2 O 3 / Si multilayer film can be used. Sometimes used. When the optical resonator is of GaAs type, it is possible to obtain a defect-free embedded layer when the embedded layer is also of GaAs type. Similarly, when the optical resonator is an InP-based optical cavity, it is possible to obtain a defect-free embedded layer by using an InP-based embedded layer as well.
【0019】[0019]
【発明の実施の形態】以下、本発明の各実施の形態につ
いて図面を参照して説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.
【0020】(第1の実施の形態)図11は、第1の実
施の形態による面発光型半導体レーザ21の上面図を示
し、図12は図11における[12]−[12]線方向
の断面図を示す。(First Embodiment) FIG. 11 is a top view of a surface emitting semiconductor laser 21 according to the first embodiment, and FIG. 12 is taken along line [12]-[12] in FIG. A sectional view is shown.
【0021】絶縁基板50上に発光層(活性領域)3を
含む光共振器を成長させた後、選択的なエッチングを行
い角柱状の光共振器11aとする。光共振器11aは、
第1の多層半導体膜ミラーとしてのn型多層半導体膜ミ
ラー2と、第2の多層半導体膜ミラーとしてのp型多層
半導体膜ミラー4とで発光層3を上下に挟んで構成され
る。その光共振器11aの周囲を第1の埋め込み層とし
てのn型埋め込み層12aと、第2の埋め込み層として
のp型埋め込み層16とで囲む。これらn型埋め込み層
12a、p型埋め込み層13は、何れも光共振器11a
の側面に接している。図11に示すように、n型埋め込
み層12aとp型埋め込み層13は、四角柱状の光共振
器11aの4つの側面のうちの1つの側面15を含む平
面(側面15と同一平面上の平面)を境界面として互い
に接している。After growing an optical resonator including the light emitting layer (active region) 3 on the insulating substrate 50, selective etching is performed to form a prismatic optical resonator 11a. The optical resonator 11a is
The light emitting layer 3 is vertically sandwiched between an n-type multilayer semiconductor film mirror 2 as a first multilayer semiconductor film mirror and a p-type multilayer semiconductor film mirror 4 as a second multilayer semiconductor film mirror. The optical resonator 11a is surrounded by an n-type buried layer 12a as a first buried layer and a p-type buried layer 16 as a second buried layer. The n-type buried layer 12a and the p-type buried layer 13 are both optical resonators 11a.
Touches the side of. As shown in FIG. 11, the n-type buried layer 12a and the p-type buried layer 13 are planes including one side surface 15 of the four side surfaces of the rectangular column-shaped optical resonator 11a (a plane flush with the side surface 15). ) Are in contact with each other as a boundary surface.
【0022】以下、具体的に本実施の形態による面発光
型半導体レーザ21の製造方法について説明する。A method of manufacturing the surface-emitting type semiconductor laser 21 according to this embodiment will be specifically described below.
【0023】先ず、図1に示すように、絶縁基板50上
に、n型多層半導体膜ミラー2、発光層3、p型多層半
導体膜ミラー4を順にエピタキシャル成長させる。これ
によって、発光層3をn型多層半導体膜ミラー2とp型
多層半導体膜ミラー4とで上下に挟んでなる光共振器1
1が、絶縁基板50の主面に対して垂直に形成される。First, as shown in FIG. 1, an n-type multilayer semiconductor film mirror 2, a light emitting layer 3, and a p-type multilayer semiconductor film mirror 4 are epitaxially grown in order on an insulating substrate 50. Thereby, the optical resonator 1 in which the light emitting layer 3 is vertically sandwiched between the n-type multilayer semiconductor film mirror 2 and the p-type multilayer semiconductor film mirror 4
1 is formed perpendicular to the main surface of the insulating substrate 50.
【0024】絶縁基板50は、例えばノンドープのGaAs
でなる。あるいは、クロム銅などを用いてもよい。n型
多層半導体膜ミラー2は、例えばn型AlAsとn型AlGaAs
のヘテロ接合層を1ペアとして、これが数十ペア積層さ
れて構成される。p型多層半導体膜ミラー4は、例えば
p型AlAsとp型AlGaAsのヘテロ接合層を1ペアとして、
これが数十ペア積層されて構成される。n型、p型多層
半導体膜ミラー2、4中のAlGaAs層のAl混晶比は例えば
0.1 である。発光層3は、例えばGaAsのウェル(井戸
層)をAlGaAsで上下に挟んで、全体の厚さを波長サイズ
にしている。The insulating substrate 50 is, for example, non-doped GaAs.
It consists of Alternatively, chrome copper or the like may be used. The n-type multi-layer semiconductor film mirror 2 includes, for example, n-type AlAs and n-type AlGaAs.
The heterojunction layer of 1 is set as one pair, and several tens of pairs are laminated and configured. The p-type multilayer semiconductor film mirror 4 includes, for example, a heterojunction layer of p-type AlAs and p-type AlGaAs as one pair,
This is formed by stacking several tens of pairs. The Al mixed crystal ratio of the AlGaAs layers in the n-type and p-type multilayer semiconductor film mirrors 2 and 4 is, for example,
It is 0.1. The light emitting layer 3 has, for example, a GaAs well (well layer) vertically sandwiched by AlGaAs to have a total thickness of a wavelength size.
【0025】エピタキシャル成長の方法としては、例え
ばメチル系MOCVD 法が用いられる。更に具体的には、II
I 族元素のガスソースとしてトリメチルガリウム、トリ
メチルアルミニウムを用い、V族元素のガスソースとし
てはAsH3を、n型ドーパントとしてはH2Seを、p型ドー
パントとしてはジエチルジンクを用いてCVDを行う。
もちろん、他の結晶成長法、例えばMBE法を用いても
よい。As the epitaxial growth method, for example, a methyl-based MOCVD method is used. More specifically, II
CVD is performed using trimethylgallium and trimethylaluminum as a group I element gas source, AsH 3 as a group V element gas source, H 2 Se as an n-type dopant, and diethyl zinc as a p-type dopant. .
Of course, another crystal growth method, for example, MBE method may be used.
【0026】次いで、光共振器11上面の正方形状の領
域に絶縁膜などからなるマスク25を形成し、そのマス
ク25をマスクとしてRIE(Reactive Ion Etching)
などの手法を用いてエッチングを行う。これにより、図
2に示すように、四角柱形状の光共振器11aが形成さ
れる。なお、RIE法でエッチングした後も、光共振器
11a(p型多層半導体膜ミラー4)の上面にはマスク
25を残しておく。以下、図面上ではマスク25を網掛
けで示す。Next, a mask 25 made of an insulating film or the like is formed in a square area on the upper surface of the optical resonator 11, and RIE (Reactive Ion Etching) is performed using the mask 25 as a mask.
Etching is performed by using such a method. As a result, as shown in FIG. 2, the optical resonator 11a having a quadrangular prism shape is formed. Note that the mask 25 is left on the upper surface of the optical resonator 11a (p-type multilayer semiconductor film mirror 4) even after etching by the RIE method. In the following, the mask 25 is shaded in the drawings.
【0027】次いで、図3に示すように、絶縁基板50
上に、n型埋め込み層12をマスク25とほぼ同じ高さ
になるまでエピタキシャル成長させる。n型埋め込み層
12は、例えばn型AlGaAsでなる。これにより、n型埋
め込み層12は、光共振器11aの全側面に接して取り
囲む。このときの結晶成長法としてはMOCVD 法を用いれ
ば、欠陥のない良好な結晶面を形成させることができ
る。Next, as shown in FIG. 3, the insulating substrate 50
The n-type buried layer 12 is epitaxially grown on the upper surface of the n-type buried layer 12 to a height substantially equal to that of the mask 25. The n-type buried layer 12 is made of, for example, n-type AlGaAs. As a result, the n-type buried layer 12 is in contact with and surrounds all side surfaces of the optical resonator 11a. If the MOCVD method is used as the crystal growth method at this time, a good crystal plane without defects can be formed.
【0028】続いて、n型埋め込み層12の上に、n型
コンタクト層13(例えばn型GaAsでなる)が、MOCVD
法にて結晶成長される。Subsequently, an n-type contact layer 13 (made of, for example, n-type GaAs) is formed on the n-type buried layer 12 by MOCVD.
The crystal is grown by the method.
【0029】続いて、n型コンタクト層13の上に、部
分的(光共振器11aの左端側の側面15より右側の全
部分)にマスク14が形成される。マスク14は、その
左端側の側面を光共振器11aの左端側の側面15と面
一になるようにして形成される。また、光共振器11a
上に形成されたマスク25は、マスク14に覆われる。Subsequently, the mask 14 is partially (on the right side of the side surface 15 on the left end side of the optical resonator 11a) formed on the n-type contact layer 13. The mask 14 is formed such that its left end side surface is flush with the left end side surface 15 of the optical resonator 11a. In addition, the optical resonator 11a
The mask 25 formed above is covered with the mask 14.
【0030】続いて、そのマスク14をマスクとして、
n型コンタクト層13とn型埋め込み層12を順次、絶
縁基板50の上面が露出するまでエッチングする。この
エッチングは、例えばRIE法が用いられる。これによ
り、図5に示されるように、光共振器11aの左端側側
面15が露出する。残されたn型埋め込み層12aは、
光共振器11aにおける、側面15以外の3つの側面に
接して覆っている。Then, using the mask 14 as a mask,
The n-type contact layer 13 and the n-type buried layer 12 are sequentially etched until the upper surface of the insulating substrate 50 is exposed. For this etching, for example, the RIE method is used. As a result, as shown in FIG. 5, the left end side surface 15 of the optical resonator 11a is exposed. The remaining n-type buried layer 12a is
The optical resonator 11a is in contact with and covers three side surfaces other than the side surface 15.
【0031】続いて、図6に示すように、そのままマス
ク14は残したまま、そのマスク14をマスクとして、
絶縁基板50上に、p型埋め込み層16をn型埋め込み
層12aとほぼ同じ高さになるまでエピタキシャル成長
させる。p型埋め込み層16は、例えばp型AlGaAsでな
る。これにより、p型埋め込み層16は、光共振器11
aの左端側側面15に接してその側面15を覆う。この
ときの結晶成長法としてはMOCVD 法を用いれば、欠陥の
ない良好な結晶面を形成させることができる。Subsequently, as shown in FIG. 6, with the mask 14 left as it is, the mask 14 is used as a mask.
On the insulating substrate 50, the p-type buried layer 16 is epitaxially grown to a height substantially the same as the n-type buried layer 12a. The p-type buried layer 16 is made of p-type AlGaAs, for example. As a result, the p-type buried layer 16 becomes the optical resonator 11
The side surface 15 is covered by being in contact with the left side surface 15 of a. If the MOCVD method is used as the crystal growth method at this time, a good crystal plane without defects can be formed.
【0032】続いて、p型埋め込み層16の上に、p型
コンタクト層17(例えばp型GaAsでなる)が、MOCVD
法にて結晶成長される。この際、n型コンタクト層13
aとp型コンタクト層17との境界を、[011]方向
としているため、p型コンタクト層17の、光共振器1
1aよりも上方への成長では{111}B面が形成さ
れ、p型の領域とn型の領域とをきれいに分断させて成
長させることができる。Then, a p-type contact layer 17 (made of, for example, p-type GaAs) is formed on the p-type buried layer 16 by MOCVD.
The crystal is grown by the method. At this time, the n-type contact layer 13
Since the boundary between a and the p-type contact layer 17 is in the [011] direction, the optical resonator 1 of the p-type contact layer 17 is
When grown above 1a, the {111} B plane is formed, and the p-type region and the n-type region can be clearly separated and grown.
【0033】次いで、マスク14及びマスク25を除去
して、図7の状態となる。続いて、それぞれのコンタク
ト層13、17に、リソグラフィー技術にて矩形状のパ
ターニングを行った後、ウェットエッチングにてその矩
形状パターン以外の部分を除去する。これにより、図8
に示すように、n型埋め込み層12aの上に部分的にn
型コンタクト層13a’が、p型埋め込み層16の上に
部分的にp型コンタクト層17’が、それぞれ形成され
る。Next, the mask 14 and the mask 25 are removed, and the state shown in FIG. 7 is obtained. Subsequently, the contact layers 13 and 17 are patterned into a rectangular shape by a lithography technique, and then the portions other than the rectangular pattern are removed by wet etching. As a result, FIG.
As shown in FIG.
The p-type contact layer 13 a ′ and the p-type contact layer 17 ′ are partially formed on the p-type buried layer 16.
【0034】続いて、図9に示すように、n型コンタク
ト層13a’の上にn側電極(金属膜)19と、p型コ
ンタクト層17’の上にp側電極(金属膜)18が、そ
れぞれ蒸着法にて形成される。もちろん、電極18、1
9は蒸着法に限らず、スパッタリング法などで形成して
もよい。Then, as shown in FIG. 9, an n-side electrode (metal film) 19 is formed on the n-type contact layer 13a ', and a p-side electrode (metal film) 18 is formed on the p-type contact layer 17'. , Are each formed by the vapor deposition method. Of course, the electrodes 18, 1
9 is not limited to the vapor deposition method and may be formed by the sputtering method or the like.
【0035】最後に、図10に示すように、n側電極1
9とp側電極18のそれぞれに、例えば金線にてワイヤ
ボンディングが行われて、本実施の形態による面発光型
半導体レーザ21が得られる。Finally, as shown in FIG. 10, the n-side electrode 1
Wire bonding is performed on each of the 9 and the p-side electrode 18 with, for example, a gold wire, and the surface emitting semiconductor laser 21 according to the present embodiment is obtained.
【0036】以上のように構成される面発光型半導体レ
ーザ21において、図12に示すように、光共振器11
aにとって順方向電圧となるように、電極18、19に
電圧を印加すると、p型多層半導体膜ミラー4には、p
型埋め込み層16から、ホールが矢印hで示すように注
入されて発光層3に至る。n型多層半導体膜ミラー2に
は、n型埋め込み層12aから、電子が矢印eで示すよ
うに注入されて発光層3に至る。なお、図12では、図
10に示されるボンディングワイヤ20の図示は省略し
ている。In the surface-emitting type semiconductor laser 21 constructed as described above, as shown in FIG.
When a voltage is applied to the electrodes 18 and 19 so that a forward voltage is applied to a, the p-type multilayer semiconductor film mirror 4 has p
Holes are injected from the mold burying layer 16 as shown by an arrow h to reach the light emitting layer 3. In the n-type multilayer semiconductor film mirror 2, electrons are injected from the n-type buried layer 12a as shown by an arrow e to reach the light emitting layer 3. Note that the bonding wire 20 shown in FIG. 10 is omitted in FIG.
【0037】図11から明らかなように、ホールは光共
振器11aの1つの側面15側から注入され、電子は光
共振器11aの側面15以外の3つの側面側から注入さ
れる。As is apparent from FIG. 11, holes are injected from one side surface 15 side of the optical resonator 11a, and electrons are injected from three side surface sides other than the side surface 15 of the optical resonator 11a.
【0038】この結果、発光層3にてホールと電子の再
結合により光が生じて、その光が両多層半導体膜ミラー
2、4間で反射されながら増幅されて、光共振器11a
の上面からレーザ光Lが出射する。なお、p、n埋め込
み層16、12aの形成される基板50を絶縁基板とし
ていることで、その基板50を通じてはp、n埋め込み
層16、12a間に電流は流れず、発光層3のpn接合
に電流が流れ良好な発光作用を行うことができる。As a result, light is generated by the recombination of holes and electrons in the light emitting layer 3, and the light is amplified while being reflected between the multilayer semiconductor film mirrors 2 and 4, and the optical resonator 11a.
A laser beam L is emitted from the upper surface of the. Since the substrate 50 on which the p and n buried layers 16 and 12a are formed is an insulating substrate, a current does not flow between the p and n buried layers 16 and 12a through the substrate 50, and the pn junction of the light emitting layer 3 is formed. A current flows through the device, and a good light emitting action can be performed.
【0039】このように、本実施の形態では、ホール及
び電子が、p、n多層半導体膜ミラー4、2へと、横方
向(p、n多層半導体膜ミラー4、2の側面側)から注
入されるため、ホール及び電子がp、n多層半導体膜ミ
ラー4、2のヘテロ障壁を通る距離を短くでき、この結
果p、n多層半導体膜ミラー4、2での抵抗を低くする
ことができ良好なレーザ特性が得られる。更に、両電極
18、19は、レーザ光の出射側に形成されいるにも関
わらず、両電極18、19は従来に比べて大きな面積で
もって、p、n領域との接触が可能になるので、このこ
とも低抵抗化を促進する。As described above, in this embodiment, holes and electrons are injected into the p, n multilayer semiconductor film mirrors 4 and 2 from the lateral direction (side surface side of the p and n multilayer semiconductor film mirrors 4 and 2). Therefore, the distance that holes and electrons pass through the hetero barrier of the p and n multilayer semiconductor film mirrors 4 and 2 can be shortened, and as a result, the resistance of the p and n multilayer semiconductor film mirrors 4 and 2 can be reduced, which is excellent. Excellent laser characteristics can be obtained. Further, although both electrodes 18 and 19 are formed on the laser light emitting side, both electrodes 18 and 19 can contact the p and n regions with a larger area than in the conventional case. , This also promotes low resistance.
【0040】また、p、n多層半導体膜ミラー4、2
に、高濃度に不純物をドーピングすることなく低抵抗化
を実現できる。すなわち、p、n多層半導体膜ミラー
4、2における光の吸収を増大させることなく低抵抗化
を実現でき、発振しきい値電流の増大や発光効率の低下
を防止できる。Further, p, n multilayer semiconductor film mirrors 4, 2
In addition, low resistance can be realized without doping impurities in high concentration. That is, the resistance can be reduced without increasing the absorption of light in the p and n multilayer semiconductor film mirrors 4 and 2, and the increase in the oscillation threshold current and the decrease in the light emission efficiency can be prevented.
【0041】更に、両電極18、19は共に絶縁基板5
0の上面側に形成される構造であるので、電極18、1
9自体の形成や、それら電極18、19の外部への取り
出し(引き出し)が容易に行える。Furthermore, both electrodes 18 and 19 are both insulating substrates 5.
Since the structure is formed on the upper surface side of 0, the electrodes 18, 1
It is possible to easily form 9 itself and take out (draw out) the electrodes 18 and 19 to the outside.
【0042】(第2の実施の形態)次に、本発明の第2
の実施の形態について説明する。なお、上記第1の実施
の形態と同じ構成部分には同一の符号を付し、その詳細
な説明は省略する。(Second Embodiment) Next, the second embodiment of the present invention will be described.
The embodiment will be described. The same components as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.
【0043】この第2の実施の形態では、図14に示す
ように、p型埋め込み層28が光共振器11aの側面に
接する面積と、n型埋め込み層29が光共振器11aの
側面に接する面積とがほぼ等しくなるようにしている。
これにより、ホールと電子とを光共振器11aに均一に
注入でき、その結果、発光層3におけるホールと電子の
結合効率を高め、発振しきい値電流を低下させたり、発
光効率を高めることができる。In this second embodiment, as shown in FIG. 14, the area where the p-type buried layer 28 contacts the side surface of the optical resonator 11a and the n-type buried layer 29 contacts the side surface of the optical resonator 11a. The area is almost equal.
As a result, holes and electrons can be uniformly injected into the optical resonator 11a, and as a result, the coupling efficiency of holes and electrons in the light emitting layer 3 can be increased, the oscillation threshold current can be reduced, and the emission efficiency can be increased. it can.
【0044】このような構成は、図15に示すように、
n型埋め込み層29をエッチングにて部分的に除去する
際に、光共振器11aの左端側の側面15に加えて、そ
の側面15に垂直な2つの面も、それぞれ半分だけ露出
させるように、n型埋め込み層29のエッチング行えば
よい。Such a configuration is as shown in FIG.
When partially removing the n-type buried layer 29 by etching, in addition to the side surface 15 on the left end side of the optical resonator 11a, two surfaces perpendicular to the side surface 15 are exposed by half. The n-type buried layer 29 may be etched.
【0045】ただし、この場合には異なる面指数を有す
る2つの面A、Bが露出されるので、その露出された面
に接してP型埋め込み層28をエピタキシャル成長させ
る際には、側面15のみを露出させる第1の実施の形態
に比べて結晶に欠陥が生じやすくなる可能性はある。In this case, however, two planes A and B having different plane indices are exposed, and therefore when the P-type buried layer 28 is epitaxially grown in contact with the exposed planes, only the side surface 15 is exposed. There is a possibility that defects may easily occur in the crystal as compared with the first embodiment in which the crystal is exposed.
【0046】以上、本発明の各実施の形態について説明
したが、勿論、本発明はこれらに限定されることなく、
本発明の技術的思想に基づいて種々の変形が可能であ
る。Although the respective embodiments of the present invention have been described above, of course, the present invention is not limited to these.
Various modifications are possible based on the technical idea of the present invention.
【0047】図13に示すように、p型埋め込み層26
が光共振器11aの3つの側面に接し、n型埋め込み層
27が光共振器11aの残りの1つの側面に接する構成
であってもよい。As shown in FIG. 13, a p-type buried layer 26 is formed.
May contact three side surfaces of the optical resonator 11a, and the n-type buried layer 27 may contact one remaining side surface of the optical resonator 11a.
【0048】また、図12において、光共振器11aの
上面を例えば金属膜で覆って、且つ発振波長に対して透
過性を有する絶縁基板50を用いることで、更に必要に
応じて絶縁基板50を裏面側から研削して薄くすること
で、絶縁基板50側からレーザ光Lを出射させてもよ
い。Further, in FIG. 12, by using an insulating substrate 50 which covers the upper surface of the optical resonator 11a with, for example, a metal film and is transparent to the oscillation wavelength, the insulating substrate 50 can be further used as necessary. The laser light L may be emitted from the insulating substrate 50 side by grinding from the back surface side to reduce the thickness.
【0049】[0049]
【発明の効果】以上述べたように、本発明によれば、多
層半導体膜ミラーの側面側からキャリアが注入され、多
数のヘテロ障壁を有する多層半導体膜ミラーを長い距離
通らずに済み、抵抗が低くなり良好なレーザ特性が得ら
れる。As described above, according to the present invention, carriers are injected from the side surface of the multi-layer semiconductor film mirror, and it is not necessary to pass through the multi-layer semiconductor film mirror having a large number of hetero barriers for a long distance. It becomes low and good laser characteristics can be obtained.
【図1】本発明の第1の実施の形態による、面発光型半
導体レーザの製造工程(その1)を示す斜視図である。FIG. 1 is a perspective view showing a manufacturing process (1) of a surface-emitting type semiconductor laser according to a first embodiment of the present invention.
【図2】図1に続く、面発光型半導体レーザの製造工程
(その2)を示す斜視図である。FIG. 2 is a perspective view showing a manufacturing process (2) of the surface-emitting type semiconductor laser, following FIG. 1;
【図3】図2に続く、面発光型半導体レーザの製造工程
(その3)を示す斜視図である。FIG. 3 is a perspective view showing a manufacturing process (3) of the surface emitting semiconductor laser, following FIG. 2;
【図4】図3に続く、面発光型半導体レーザの製造工程
(その4)を示す斜視図である。FIG. 4 is a perspective view showing a manufacturing process (4) of the surface emitting semiconductor laser, following FIG. 3;
【図5】図4に続く、面発光型半導体レーザの製造工程
(その5)を示す斜視図である。FIG. 5 is a perspective view showing a step (5) of manufacturing the surface emitting semiconductor laser, following FIG. 4;
【図6】図5に続く、面発光型半導体レーザの製造工程
(その6)を示す斜視図である。FIG. 6 is a perspective view showing a manufacturing step (6) of the surface-emitting type semiconductor laser, following FIG. 5;
【図7】図6に続く、面発光型半導体レーザの製造工程
(その7)を示す斜視図である。FIG. 7 is a perspective view showing a step (seventh) of manufacturing the surface-emitting type semiconductor laser, following FIG. 6;
【図8】図7に続く、面発光型半導体レーザの製造工程
(その8)を示す斜視図である。FIG. 8 is a perspective view showing a manufacturing process (8) of the surface-emitting type semiconductor laser, following FIG. 7;
【図9】図8に続く、面発光型半導体レーザの製造工程
(その9)を示す斜視図である。FIG. 9 is a perspective view showing a manufacturing step (9) of the surface-emitting type semiconductor laser, following FIG. 8;
【図10】図9に続く工程にて完成した面発光型半導体
レーザの斜視図である。10 is a perspective view of a surface-emitting type semiconductor laser completed in a step following that of FIG.
【図11】同面発光型半導体レーザの平面図である。FIG. 11 is a plan view of a surface-emitting type semiconductor laser.
【図12】図11における[12]−[12]線方向の
断面図図である。12 is a cross-sectional view taken along line [12]-[12] in FIG.
【図13】本発明の変形例による面発光型半導体レーザ
の平面図である。FIG. 13 is a plan view of a surface emitting semiconductor laser according to a modification of the present invention.
【図14】本発明の第2の実施の形態による面発光型半
導体レーザの平面図である。FIG. 14 is a plan view of a surface emitting semiconductor laser according to a second embodiment of the present invention.
【図15】同第2の実施の形態の面発光型半導体レーザ
の製造工程を示す斜視図である。FIG. 15 is a perspective view showing a manufacturing process of the surface-emitting type semiconductor laser according to the second embodiment.
【図16】従来例の面発光型半導体レーザの製造工程
(その1)を示す斜視図である。FIG. 16 is a perspective view showing a manufacturing process (1) of a conventional surface-emitting type semiconductor laser.
【図17】図16に続く製造工程(その2)を示す斜視
図である。FIG. 17 is a perspective view showing a manufacturing step (2) following FIG. 16;
【図18】図17に続く工程にて完成した従来例の面発
光型半導体レーザの断面図である。FIG. 18 is a cross-sectional view of a surface-emitting type semiconductor laser of a conventional example completed in the step following FIG.
【図19】同従来例の面発光型半導体レーザの平面図で
ある。FIG. 19 is a plan view of a surface emitting semiconductor laser of the conventional example.
1……n型半導体基板、2……n型多層半導体膜ミラ
ー、3……発光層、4……p型多層半導体膜ミラー、1
1a……光共振器、12a……n型埋め込み層、13
a’……n型コンタクト層、16……p型埋め込み層、
17’……p型コンタクト層、18……p側電極、19
……n側電極、21……面発光型半導体レーザ、50…
…絶縁基板。1 ... n-type semiconductor substrate, 2 ... n-type multilayer semiconductor film mirror, 3 ... emission layer, 4 ... p-type multilayer semiconductor film mirror, 1
1a ... optical resonator, 12a ... n-type buried layer, 13
a '... n-type contact layer, 16 ... p-type buried layer,
17 '... p-type contact layer, 18 ... p-side electrode, 19
... n-side electrode, 21 ... Surface emitting semiconductor laser, 50 ...
… Insulating substrate.
Claims (6)
体膜ミラーと、該第1の多層半導体膜ミラーと逆導電型
の第2の多層半導体膜ミラーとで発光層を挟んで成る光
共振器が、前記絶縁基板上に柱状に積層されており、 前記第1の多層半導体膜ミラーと同導電型の第1の埋め
込み層と、前記第2の多層半導体膜ミラーと同導電型の
第2の埋め込み層とが、前記光共振器の側面に接して該
側面を囲んでおり、 前記第1の埋め込み層と前記第2の埋め込み層は、前記
光共振器の前記側面に平行な面を境界面として互いに接
していることを特徴とする面発光型半導体レーザ。1. A light having a light emitting layer sandwiched between a first multilayer semiconductor film mirror formed on the side of an insulating substrate and a second multilayer semiconductor film mirror having an opposite conductivity type to the first multilayer semiconductor film mirror. A resonator is stacked in a columnar shape on the insulating substrate, and has a first buried layer having the same conductivity type as the first multilayer semiconductor film mirror and a first buried layer having the same conductivity type as the second multilayer semiconductor film mirror. And a second buried layer that is in contact with the side surface of the optical resonator and surrounds the side surface, and the first buried layer and the second buried layer form a surface parallel to the side surface of the optical resonator. A surface-emitting type semiconductor laser characterized by being in contact with each other as boundaries.
面は前記四角柱の何れか1つの側面を含む面であること
を特徴とする請求項1に記載の面発光型半導体レーザ。2. The surface emitting semiconductor laser according to claim 1, wherein the optical resonator has a quadrangular prism shape, and the boundary surface is a surface including one side surface of the quadrangular prism shape.
込み層のそれぞれが、前記光共振器の前記側面に接する
面積は等しいことを特徴とする請求項1に記載の面発光
型半導体レーザ。3. The surface emitting semiconductor laser according to claim 1, wherein the first buried layer and the second buried layer have the same area in contact with the side surface of the optical resonator. .
ーと、発光層と、前記第1の多層半導体膜ミラーと逆導
電型の第2の多層半導体膜ミラーとを積層して、前記発
光層を前記第1の多層半導体膜ミラーと前記第2の多層
半導体膜ミラーとで挟んで成る光共振器を形成する工程
と、 前記光共振器を選択的にエッチングして柱状にする工程
と、 前記第1の多層半導体膜ミラーと同導電型の第1の埋め
込み層を、前記光共振器の側面を囲むように該側面に接
して形成する工程と、 前記第1の埋め込み層を選択的にエッチングして、前記
光共振器の前記側面を部分的に露出させる工程と、 前記露出された前記光共振器の側面を、前記第2の多層
半導体膜ミラーと同導電型の第2の埋め込み層で覆う工
程とを有することを特徴とする面発光型半導体レーザの
製造方法。4. A first multilayer semiconductor film mirror, a light emitting layer, and a second multilayer semiconductor film mirror having a conductivity type opposite to that of the first multilayer semiconductor film mirror are laminated on an insulating substrate, Forming an optical resonator having a light emitting layer sandwiched between the first multilayer semiconductor film mirror and the second multilayer semiconductor film mirror; and selectively etching the optical resonator into a columnar shape. Forming a first buried layer of the same conductivity type as the first multilayer semiconductor film mirror in contact with the side surface of the optical resonator so as to surround the side surface, and selectively forming the first buried layer. And partially exposing the side surface of the optical resonator, and exposing the exposed side surface of the optical resonator to a second buried layer having the same conductivity type as the second multilayer semiconductor film mirror. A surface-emitting type semiconductor having a step of covering with a layer. Method of manufacturing a laser.
り、前記四角柱の何れか1つの側面のみを露出させるこ
とを特徴とする請求項4に記載の面発光型半導体レーザ
の製造方法。5. The optical resonator is formed in a quadrangular prism, and only one side surface of the quadrangular prism is exposed by the selective etching of the first burying layer. 4. The method for manufacturing the surface-emitting type semiconductor laser described in 4.
1の埋め込み層が接している部分と、前記露出された部
分との面積が等しくなるように、前記第1の埋め込み層
の前記選択的なエッチングを行うことを特徴とする請求
項4に記載の面発光型半導体レーザの製造方法。6. The first embedding layer of the optical cavity, wherein a portion of the side surface of the optical resonator in contact with the first embedding layer and an exposed portion have the same area. The method for manufacturing a surface-emitting type semiconductor laser according to claim 4, wherein selective etching is performed.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007053369A (en) * | 2005-08-15 | 2007-03-01 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | Nitride semiconductor vertical cavity surface-emitting laser |
KR101300355B1 (en) | 2005-07-22 | 2013-08-28 | 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 | Vcsel system with transverse p/n junction |
JP2017059584A (en) * | 2015-09-14 | 2017-03-23 | 住友電気工業株式会社 | Semiconductor laser |
-
2002
- 2002-04-26 JP JP2002125856A patent/JP2003324249A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101300355B1 (en) | 2005-07-22 | 2013-08-28 | 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 | Vcsel system with transverse p/n junction |
JP2007053369A (en) * | 2005-08-15 | 2007-03-01 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | Nitride semiconductor vertical cavity surface-emitting laser |
KR101300298B1 (en) | 2005-08-15 | 2013-08-28 | 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 | Nitride semiconductor vertical cavity surface emitting laser |
JP2017059584A (en) * | 2015-09-14 | 2017-03-23 | 住友電気工業株式会社 | Semiconductor laser |
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