JP2003318190A - Method for manufacturing semiconductor device, method for manufacturing electrooptical device and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a source and a drain of an organic thin-film transistor by which a manufacturing cost can be reduced by dripping a liquid onto a specified area on a substrate by ink-jet method and drying the area. <P>SOLUTION: When a pixel electrode 21 and a signal line 22 of a pixel circuit are formed on a substrate, a source area part 23 corresponding to an area for forming a source and a drain area part 24 corresponding to an area for forming a drain are formed at the same time. A polyimide film having repellency against a liquid (a liquid forming a source and a drain) is used for the substrate 1. A gold plating having a lyophilic property to the liquid is applied to the surface of the source area part 23 and the drain area part 24. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method, an electro-optical device manufacturing method, and electronic equipment. In particular, the present invention relates to a method for manufacturing a semiconductor device (for example, an organic thin film transistor) including a step of forming a constituent layer of a semiconductor device by dropping a liquid material on a predetermined region on a substrate by an inkjet method and drying the liquid material.

[0002]

2. Description of the Related Art In flat displays such as liquid crystal display devices, organic electroluminescence display devices, and electrophoretic display devices, a type in which a thin film transistor is provided for each pixel and driven by an active matrix system is predominant. A conventional thin film transistor is formed of an inorganic material, and an amorphous silicon layer is formed as a semiconductor layer by a plasma CVD method. Since such an inorganic thin film transistor is poor in flexibility, it is not suitable as a thin film transistor for a display having an arbitrary shape. Further, a high vacuum apparatus is required for forming the semiconductor layer and the insulating layer, and it is expected that the manufacturing cost will be significantly increased in order to increase the size.

On the other hand, "2000 International Elec
Pages 623 to 626 of "Tron Device Meeting technical digest" disclose organic thin film transistors in which all constituent layers including a semiconductor layer are made of an organic material. Then, it is described that the source, drain, and gate electrodes of this organic thin film transistor are formed by an inkjet method.

In the method described in this document, a source forming region and a drain forming region on a substrate are surrounded by polyimide partition walls, and the enclosed region is PE-processed by an inkjet method.
A source and a drain are formed by dropping an aqueous solution of DOT (poly-ethylenedioxythiophene) and drying it. Thereby, the distance between the source and the drain (that is, the channel length) is precisely controlled.

Further, as a semiconductor layer thereon, F8T2 (fluorene-bithiophene copolymeme) is formed by spin coating.
r) is formed, and a layer made of PVP (poly-vinylphenol) is formed thereon as an insulating layer by a spin coating method. Further, a PEDOT aqueous solution is dropped onto the layer by an inkjet method and dried to form a gate electrode.

[0006]

However, in the method described in the above document, the steps of photolithography and etching are required to form the polyimide partition wall surrounding the source formation region and the drain formation region on the substrate, There is room for improvement in terms of reducing manufacturing costs. Further, even in the case of a transistor formed using an inorganic material, a source and a drain may be formed using a liquid material containing a silane compound, and when the layers formed using the liquid material are formed so as to be separated from each other, , Some kind of member acting as a partition is required.

An object of the present invention is to provide a method for manufacturing a semiconductor device, which comprises a step of applying a liquid material to dispose a layer made of the liquid material in a predetermined region of a substrate surface, and separating the layers made of the liquid material from each other. Even if it is formed in the above arrangement, it is to provide a method that does not require a member acting as a partition wall. Another object of the present invention is to manufacture a semiconductor device (for example, an organic thin film transistor) including a step of forming a constituent layer of the semiconductor device by dropping a liquid material onto a predetermined region on a substrate by an inkjet method and drying the liquid material. It is an object of the present invention to provide a method capable of reducing the manufacturing cost as compared with the method described in the above document.

[0008]

In order to solve the above problems, the present invention provides a semiconductor device including a step of applying a liquid material to dispose a layer made of the liquid material in a predetermined region of a substrate surface. In the manufacturing method, on the substrate, a plurality of regions having a higher affinity for the liquid material than other regions adjacent to each other are provided in a spaced apart manner, and then in at least two regions of the plurality of regions, A method for manufacturing a semiconductor device, which comprises performing the step of disposing the layers.

In the above method, the plurality of regions are
It is preferably provided by forming a conductive thin film on the substrate. In the above method, a mode in which the conductive thin film is not formed between the at least two regions where the layers are arranged can be mentioned. In the above method, the liquid material is preferably applied by an inkjet method.

In the above method, the step of disposing the layer may be a step of forming a layer forming a source and a drain forming a thin film transistor. The present invention also provides a method of manufacturing a semiconductor device, comprising a step of forming a constituent layer of a semiconductor device by dropping a liquid material onto a predetermined region of a substrate surface by an inkjet method and drying the liquid material. A conductive thin film is formed in a region where a material is dropped, and the liquid material is dropped in a state where the affinity of the surface of the conductive thin film for the liquid material is higher than that of the substrate surface. A manufacturing method is provided.

According to the present invention, a liquid material is dropped onto a predetermined region of the substrate surface by an ink jet method and dried,
In a method of manufacturing a semiconductor device including a step of forming a source and a drain which are constituent layers of a thin film transistor, a conductive thin film is formed in a region where a source is formed and a region where a drain is formed on the substrate surface, and the conductive thin film is formed. A method of manufacturing a semiconductor device, characterized in that the liquid material is dropped while the affinity of the surface of the liquid material for the liquid material is higher than that of the substrate surface.

The present invention also provides a method of manufacturing an electro-optical device including a step of manufacturing a semiconductor device by the method of the present invention. Examples of the electro-optical device include flat displays such as a liquid crystal display device, an organic electroluminescence display device, and an electrophoretic display device. The present invention also provides a plurality of pixel electrodes, a transistor provided corresponding to each pixel electrode, a signal line connected to a first region which is one of a source and a drain of each transistor, and a gate of each transistor. A scan line connected to
A pixel circuit in which each pixel electrode is connected to a second region (one of a first region and a second region is a source and the other is a drain) which is the other of the source and the drain of each transistor is formed on the substrate. In the method of manufacturing an electro-optical device according to the first aspect of the present invention, the first portion corresponding to the first region and the second portion corresponding to the second region are adjacent to each other so that a distance between both portions corresponds to a channel length. And the pixel electrode and the signal line, the first portion is connected to the signal line, and the second portion is connected to the pixel electrode. In addition to the step of forming a source and a drain by dropping a liquid material onto the portion 2 by an inkjet method and drying,
A method of manufacturing an electro-optical device, characterized in that the liquid material is dropped while the affinity of the surfaces of the first portion and the second portion for the liquid material is higher than that between the both portions of the substrate surface. I will provide a.

As the above method, there is a mode in which an organic thin film transistor is formed by dropping a liquid containing a conductive organic material as the liquid material. In the above method, a portion having a width narrower than that of the first portion is provided at a boundary position between the first portion and the signal line, and a second portion is provided at a boundary position between the second portion and the pixel electrode. It is preferable to provide a narrower portion.

The present invention also provides an electronic apparatus including the semiconductor device manufactured by the method for manufacturing a semiconductor device according to the present invention, and an electronic apparatus including the electro-optical device manufactured by the method for manufacturing an electro-optical device according to the present invention. I will provide a.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. A method of manufacturing an electro-optical device corresponding to one embodiment of the present invention will be described with reference to FIGS. In this embodiment, a method of manufacturing an active matrix type electrophoretic display device as an electro-optical device will be described.

First, a method of forming a pixel circuit of an electrophoretic display device on a substrate will be described with reference to FIGS. 1 to 4, (a) is a plan view of one pixel of the substrate,
(B) shows the sectional view on the AA line of (a). First, thickness 2
A 5 μm polyimide film was used as the substrate 1, and a conductive thin film was formed on the substrate 1. As the conductive thin film, cobalt (C
o) After forming a thin film with a thickness of 200 nm, a copper (Cu) plating layer with a thickness of 8 μm is formed, and further with a thickness of 1 μm.
m nickel (Ni) plated layer and 0.5 μm thick gold (Au) plated layer were formed in this order.

Next, the conductive thin film was patterned into the shape shown in FIG. 1A by performing photolithography and etching steps. As a result, the pixel electrode 21 is formed on the substrate 1.
, The signal line 22, and the source region portion (first portion) 23
And a drain region portion (second portion) 24 was formed.
Here, the source region portion 23 is connected to the signal line 22,
The drain region portion 24 is connected to the pixel electrode 21. Further, a neck-shaped portion (a portion having a width narrower than that of the first portion) 25 is provided at the boundary position between the source region portion 23 and the signal line 22.
A neck-shaped portion (a portion having a width narrower than the second portion) 26 was provided at the boundary position between the drain region portion 24 and the pixel electrode 21. Further, the distance L between the source region portion 23 and the drain region portion 24 is set to be the same as the channel length (for example, 10 μm). Further, a portion (a portion between the source region portion and the drain region portion) 1 corresponding to the space L on the surface of the substrate 1
0 exposed.

The surface of the conductive thin film including the source region portion 23 and the drain region portion 24 (gold plating)
The contact angle of pure water with pure water is 33.2 °. The contact angle of pure water on the substrate surface 10 between the two regions is 54.7 °. Also, PEDOT and PSS (poly-styrenesulphon) are used as liquid materials for forming the source and drain in the next step.
ate) is used. As a result, in the state of FIG. 1, the source region portion 23 and the drain region portion 2 are
The surface of No. 4 had a higher affinity for the liquid than the substrate surface 10 between both portions.

Next, in this state, as shown in FIG. 2, the drain region 2 is formed by using the liquid by an ink jet method.
4 and the source region portion 23, respectively.
As the aqueous solution, for example, one having a viscosity of 4 mP · s is used, and the ejection speed by the inkjet method is 2.5 m / s. Reference numeral 3 indicates a dropped droplet. Droplet drop is
The center of the droplet 3 is arranged at the center 31 of the drain region portion 24 and the center 32 of the source region portion 23. Here, the liquid exists only on the drain region portion 24 and the source region portion 23, and does not exist on the substrate surface 10 between the drain region portion 24 and the source region portion 23, depending on the difference in affinity of the surface for the liquid.

The liquid from the nozzle is the center 3 of these.
Even when the liquid is dropped at a position deviated from the positions 1, 32, the presence of the neck-shaped portions 25, 26 causes the liquid to drain.
4 and the entire surface of the source region 23, so that they do not extend outside these regions. Next, the droplets 3 are dried to form the source 4 on the source region portion 23.
1 and the drain 42 was formed on the drain region portion 24. FIG. 3 shows this state.

Next, as shown in FIG. 4 (b), a layer made of F8T2 is formed as a semiconductor layer 5 on the substrate 1 in this state by a spin coating method, and further thereon, by a spin coating method. A layer made of PVP was formed as the insulating layer 6. In addition, PE is applied on top of it
An aqueous solution containing DOT and PSS was dropped and dried to form a gate electrode 7 and a scanning line 70 continuous to the gate electrode 7 as shown in FIGS. 4A and 4B.

In this way, the plurality of pixel electrodes 21 and
The organic thin film transistor 8 for each pixel electrode 21 and the signal line 2 connected to the source 41 of each organic thin film transistor 8
2 and a scanning line 70 connected to the gate electrode 7 of each organic thin film transistor 8, wherein each pixel electrode 21 is a drain 42 of each organic thin film transistor 8.
A pixel circuit connected to is formed on the substrate 1.

Next, a portion (the drain 4 on the pixel electrode 21) around each organic thin film transistor 8 on the substrate 1 is formed.
2 and the semiconductor layer 5 and the insulating layer 6 formed in a predetermined area including a portion which is separated from the neck portion 26), and then a solution of the photosensitive polyimide resin composition is formed on the entire surface of the substrate 1 by a predetermined film. It was applied thick and dried. The coating thickness of the solution was set to a thickness such that the coating film had a predetermined thickness on the organic thin film transistor 8 after being dried.

Next, this coating film was irradiated with ultraviolet rays through a mask provided with a light-shielding portion having a pattern corresponding to the pixel electrodes 21. The composition is cured by ultraviolet rays to become a polyimide resin. As a result, as shown in FIG. 5, each pixel electrode 21 was surrounded by the partition wall 61 made of polyimide resin. The space surrounded by the partition wall 61 was filled with the electrophoretic dispersion liquid 91 including the electrophoretic particles 91a and the liquid phase dispersion medium 91b.

Next, an ITO thin film 16 having a predetermined thickness was formed on one surface of the PET (polyethylene terephthalate) film 15, and the ITO thin film 16 was fixed on the substrate 1 with the ITO thin film 16 side facing down. In this way, an electrophoretic display panel of the electrophoretic display device as shown in FIG. 5 was obtained. According to the method of this embodiment, a polyimide film having liquid repellency with respect to the liquid forming the source and the drain is used as the substrate 1, and the surfaces of the source region portion 23 and the drain region portion 24 have the lyophilic property with respect to the liquid. By providing the gold plating layer (which has a higher affinity for the liquid than the polyimide film), the source region portion 23
And the liquid is disposed only in the drain region portion 24. Further, since the source region portion 23 and the drain region portion 24 are simultaneously formed when the pixel electrode 21 and the signal line 22 of the pixel circuit are formed on the substrate, the manufacturing cost can be reduced as compared with the method described in the above document.

That is, in order to form the above-mentioned pixel circuit by the method described in the above document, the pixel electrode 2 of the pixel circuit is formed.
1, the signal line 22, and the wiring extending from the signal line 22 to the pixel electrode 21 side are formed on a substrate having lyophilicity with respect to the liquid, a polyimide layer is formed thereon, and the polyimide layer is subjected to photolithography. Further, it is necessary to form a polyimide partition wall surrounding the source formation region and the drain formation region on the substrate by patterning in the etching process. The formation of this polyimide layer and the patterning process therefor are not necessary in the method of the present invention.

In the method of the above embodiment, since an aqueous solution is used as the liquid to be dropped by the ink jet method, a water-repellent polyimide film is used as the substrate 1, and the surfaces of the source region portion 23 and the drain region portion 24 are hydrophilic. Although gold plating is applied, in order to increase the water repellency of the polyimide surface and the hydrophilicity of the surfaces of the source region portion 23 and the drain region portion 24, the surface of the substrate 1 is formed with oxygen plasma after forming the pixel electrodes 21 and the like. After the treatment, it is preferable to further perform carbon tetrafluoride (CF ₄ ) plasma treatment.

Although the substrate itself may be made of a liquid repellent material for the liquid used as in this embodiment, a liquid repellent film is formed on the surface of the lyophilic substrate. Therefore, only the surface of the substrate on which the liquid is dropped (applied) may be made liquid repellent. When manufacturing an active matrix type liquid crystal display device as shown in FIG. 6 as an electro-optical device, first, the same pixel circuit as that described above is obtained by performing the steps shown in FIGS. Are formed on the substrate 1. However, a PET film is used as the substrate 1, and an ITO thin film is formed as a conductive thin film.

That is, the pixel electrode 21, the signal line 22, the source region portion 23, the drain region portion 24, and the neck portions 25 and 26 are formed of an ITO thin film. And
In order to increase the water repellency of the surface of the PET film, which is the surface of the substrate 1, and the hydrophilicity of the surfaces of the source region portion 23 and the drain region portion 24, after forming the pixel electrodes 21 and the like, the surface of the substrate 1 is subjected to oxygen plasma treatment, Further, carbon tetrafluoride (CF ₄ ) plasma treatment is performed.

Next, the surface of the substrate 1 on which the pixel circuit is formed (the surface on the organic thin film transistor 8 side) is rubbed by a rubbing device. That is, the gate insulating film 6 is used as a liquid crystal alignment film. Next, an ITO thin film 16 having a predetermined thickness is formed on one surface of the PET film 15, and the ITO thin film 16 is formed.
A polyimide thin film 17 is formed on the thin film 16 by spin coating, and the polyimide thin film 17 is rubbed by a rubbing device.

Next, the PET film 15 is fixed on the substrate 1 with the polyimide thin film 17 side facing downward and via the spacers 18 for partitioning the pixels. At this time, the rubbing directions of the gate insulating film 6 and the polyimide thin film 17 are set to be at right angles to each other. Next, the space between the adjacent spacers 18 is filled with the TN liquid crystal 19. Next, the polarizing plate 14 is fixed to the outside of the substrate 1 and the PET film 15. Further, the backlight unit is attached. [Embodiment of Electronic Device] The electrophoretic display device and the liquid crystal display device of the above-described embodiment are applicable to various electronic devices such as electronic paper, electronic notebooks, electronic books, mobile personal computers, mobile phones, and digital still cameras. It can be applied to the display unit.

FIG. 7 is a perspective view showing the external structure of the electronic paper (rewritable sheet). The electronic paper 200 includes a main body 201 and an electrophoretic display panel 202. Main body 201 and electrophoretic display panel 202
Is formed into a sheet having a texture and flexibility similar to paper. The driving circuit of the electrophoretic display panel 202 is built in the main body 201 or provided as a rewriting device separate from the electronic paper.

FIG. 8 is a sectional view (a) and a plan view (b) showing the rewriting / display device of the electronic paper 200 described above. This apparatus includes a housing 401, two pairs of conveying rollers 402a and 402b, a rectangular hole 403 formed on an observation surface (display surface) of the housing 401, and a rectangular hole 403.
The transparent glass plate 404 fitted in the electronic paper 2
00, an insertion port 405 into the housing 401, a socket 407, a controller 408, and an operation unit 409.

Two sets of conveying roller pairs 402a, 402b
Are arranged inside the housing 401 at intervals. The pair of conveying rollers 402b is used for the electronic paper 2
00 near the insertion port 405 of the other transport roller pair 40
2a is arranged at a position away from the insertion port 405.
The socket 407 is arranged further on the back side (opposite to the insertion port 405) of the pair of transport rollers 402 a at a position away from the insertion port 405.

The terminal portion 20 is provided at the tip of the electronic paper 200.
5 is provided. Both ends of the electronic paper 200 inserted into the housing 401 from the insertion opening 405 are sandwiched by two pairs of conveying rollers 402a and 402b. In this state, the terminal portion 205 of the electronic paper 200 is connected to the socket 40.
7 and the end on the opposite side is exposed from the insertion opening 405. The electronic paper 200 can be taken out from the housing 401 by holding the end portion and pulling. A controller 408 including a drive circuit is connected to the socket 407. The operation unit 409 is provided beside the transparent glass plate 404 on the display surface of the housing 401.

When using this device, first, the electronic paper 200 is inserted into the housing 401 through the insertion port 405 so that the display surface of the electronic paper 200 faces the transparent glass plate 404. Next, by operating the operation unit 409, the controller 408 is operated and the electronic paper 2
The image is written in 00, and the displayed image is erased or rewritten. The electronic paper 200 on which the image is written can be viewed from the transparent glass plate 404 while it is inside the housing 401, or can be removed from the housing 401 and carried.

FIG. 9 is a perspective view showing the external structure of the electronic notebook. In this electronic notebook, a plurality of the above-mentioned electronic papers 200 shown in FIG. 7 are bundled and a notebook-like cover 301 is provided on the outside thereof. If the cover 301 is provided with the display data input means, the display contents of the electronic papers 200 can be changed in the bundled state. FIG. 10 is a perspective view showing the external configuration of the electronic book. The electronic book 500 includes a main body 5 including an electrophoretic display device.
01 and cover 502, and display unit 5 is provided on main body 501.
03 and an operation unit 504 are provided. The cover 502 is attached to the main body 501 so that it can be freely opened and closed.
2 is opened, the display surface of the display unit 503 and the operation unit 504
Is exposed. The main body 501 includes a controller, a counter, a memory, a data reading device for reading data in a storage medium such as a CDROM, and the like.

FIG. 11 is a perspective view showing the external structure of a mobile personal computer. The personal computer 600 includes a main body 602 having a keyboard 601 and a display unit 603 including a liquid crystal display device.
It consists of and. FIG. 12 is a perspective view showing the external configuration of a mobile phone. This mobile phone 700 includes a plurality of operation buttons 701, an earpiece 702, and a mouthpiece 703.
A display panel 704 including a liquid crystal display device is provided.

FIG. 13 is a perspective view showing the structure of a digital still camera, and also shows a simple connection with external equipment. This digital still camera 800
Is formed on the case 801 and the back surface of the case 801,
CCD (Charge Coupled Device)
The display panel 802 is formed of a liquid crystal display device that is configured to display based on the image pickup signal of e), and an optical lens, a CCD, and the like formed on the observation side (the back side in the figure) of the case 801. A light receiving unit 803, a shutter button 804, and a circuit board 805 to which an image pickup signal of the CCD when the shutter button 804 is pressed are transferred and stored.

A video signal output terminal 80 is provided on the side surface of the case 801 of the digital still camera 800.
6 and an input / output terminal 807 for data communication are provided, a television monitor 806A is connected to the former, and a personal computer 807A is connected to the latter, if necessary. The image pickup signal stored in the memory of the circuit board 805 is output to the television monitor 806A or the personal computer 807A by a predetermined operation.

As the electronic equipment to which the electrophoretic display device and the liquid crystal display device can be applied as a display section, etc., in addition to these, a television, a viewfinder type or a monitor direct view type video tape recorder, a car navigation device, a pager , An electronic notebook, a calculator, a word processor, a workstation, a videophone, a POS terminal, a device equipped with a touch panel, and the like.

[0042]

As described above, according to the method of the present invention, a method of manufacturing a semiconductor device including a step of applying a liquid material to dispose a layer made of the liquid material in a predetermined region of a substrate surface. In the above, when the layers made of a liquid material are formed so as to be spaced apart from each other, the layer can be arranged in a predetermined region in the step without using a member acting as a partition.

Further, in the method of the present invention, in the method of manufacturing a semiconductor device, which comprises a step of forming a constituent layer of the semiconductor device by dropping a liquid material onto a predetermined region on a substrate by an ink jet method and drying it. A conductive thin film is formed on the predetermined region, and the liquid is dropped on the thin film.
Further, by providing a difference in surface state between the substrate surface and the conductive thin film surface, the liquid material is dropped only on the conductive thin film. Thus, the liquid material can be dropped only on the portion where the liquid material is desired to be dropped without forming a partition wall surrounding the predetermined region on the substrate.

Therefore, according to the method of the present invention, in the case where the liquid material is applied (dropped) after the conductive thin film having a predetermined pattern is formed on the substrate, the manufacturing cost is lower than that of the method described in the above document. It can be reduced.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a method of manufacturing an electro-optical device (method of forming a pixel circuit on a substrate) corresponding to an embodiment of the present invention, in which (a) is a plan view of one pixel of the substrate. To
(B) shows the sectional view on the AA line of (a).

FIG. 2 is a diagram illustrating a method of manufacturing an electro-optical device (method of forming a pixel circuit on a substrate) according to an embodiment of the present invention, in which (a) is a plan view of one pixel of the substrate. To
(B) shows the sectional view on the AA line of (a).

FIG. 3 is a diagram illustrating a method of manufacturing an electro-optical device (method of forming a pixel circuit on a substrate) according to an embodiment of the present invention, in which (a) is a plan view of one pixel of the substrate. To
(B) shows the sectional view on the AA line of (a).

FIG. 4 is a diagram illustrating a method of manufacturing an electro-optical device (method of forming a pixel circuit on a substrate) corresponding to one embodiment of the present invention, in which (a) is a plan view of one pixel of the substrate. To
(B) shows the sectional view on the AA line of (a).

FIG. 5 is a diagram illustrating a method of manufacturing the electro-optical device corresponding to the embodiment of the present invention, which is a cross-sectional view illustrating the manufactured electrophoretic display panel.

FIG. 6 is a diagram illustrating a method of manufacturing the electro-optical device corresponding to the embodiment of the present invention, which is a cross-sectional view illustrating the manufactured liquid crystal display panel.

FIG. 7 is a perspective view showing an external configuration of electronic paper that is an example of the electronic apparatus of the invention.

8A and 8B are a cross-sectional view (a) and a plan view (b) showing an electronic paper rewriting / display device which is an example of an electronic apparatus according to the invention.

FIG. 9 is a perspective view showing an external configuration of an electronic notebook that is an example of the electronic apparatus of the invention.

FIG. 10 is a perspective view showing an external configuration of an electronic book which is an example of the electronic apparatus of the invention.

FIG. 11 is a perspective view showing an external configuration of a mobile personal computer that is an example of the electronic apparatus of the invention.

FIG. 12 is a perspective view showing an external configuration of a mobile phone which is an example of the electronic apparatus of the invention.

FIG. 13 is a perspective view showing a configuration of a digital still camera which is an example of the electronic apparatus of the invention.

[Explanation of symbols]

Reference Signs List 1 substrate 10 substrate surface between source region portion and drain region portion 14 polarizing plate 15 PET film 16 ITO thin film 17 polyimide thin film 18 spacer 19 TN liquid crystal 21 pixel electrode 22 signal line 23 source region portion (first portion) 24 Drain region portion (second portion) 25 Neck portion (narrower portion than the first portion) 26 Neck portion (narrower portion than the second portion) 3 Droplet 31 Drain region center 32 Source Center of region 41 Source (first region) 42 Drain (second region) 5 Semiconductor layer 6 Insulating layer (gate insulating film) 61 Partition 7 Gate electrode 70 Scan line 8 Organic thin film transistor 91a Electrophoretic particle 91b Liquid phase dispersion Medium 91 Electrophoretic dispersion liquid 200 Electronic paper (electronic device) 201 Main body 202 Electrophoretic display panel 205 Terminal portion 300 Electronic Notebook (Electronic Device) 301 Cover 400 Electronic Paper Rewriting / Display Device 401 Housing 402a Conveying Roller Pair 402b Conveying Roller Pair 403 Rectangular Hole 404 Transparent Glass Plate 405 Insert Port 407 Socket 408 Controller 409 Operation Unit 500 Electronic Book (Electronic Device) ) 501 main body 502 cover 503 display unit 504 operation unit 600 mobile personal computer (electronic device) 601 keyboard 602 main body unit 603 display unit 700 mobile phone (electronic device) 701 operation button 702 earpiece 703 mouthpiece 704 display panel 800 digital Still camera (electronic device) 801 Case 802 Display panel 803 Light receiving unit 804 Shutter button 805 Circuit board 806 Video signal output terminal 806A Television monitor 8 7 input and output terminals 807A personal computer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 29/786 H01L 29/78 618A 29/50 M 29/78 616U (72) Inventor Hoya Ishida Suwa Nagano Prefecture 3-5, Yamato-shi, Seiko Epson Co., Ltd. F-term (reference) 4M104 AA09 AA10 BB04 BB36 CC01 CC05 DD22 DD37 DD51 DD52 DD53 DD63 EE03 EE06 EE18 FF13 GG08 5F053 AA50 BB09 DD19 FF01 HH10 AF10F10 RR10 AB07 5 RR10 AA16 BB01 CC05 DD01 EE01 EE41 EE42 FF01 FF21 FF27 GG05 GG28 GG41 GG42 HK01 HK02 HK07 HK22 HK31 HK32 HK33 NN02 NN27 NN36 QQ06

Claims (12)

[Claims] 1. A method of manufacturing a semiconductor device, comprising a step of applying a liquid material to dispose a layer made of the liquid material in a predetermined region of a substrate surface, wherein the substrate has a high affinity for the liquid material. A plurality of regions higher than other adjacent regions are provided in a mutually spaced arrangement, and then the step of disposing the layer in at least two regions of the plurality of regions is performed. Production method. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the plurality of regions are provided by forming a conductive thin film on a substrate. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the conductive thin film is not formed between the at least two regions where the layers are arranged. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the liquid material is applied by an inkjet method. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the step of disposing the layer is a step of forming a layer that forms a source and a drain that form a thin film transistor. 6. A method for manufacturing a semiconductor device, comprising a step of forming a constituent layer of a semiconductor device by dropping a liquid material onto a predetermined region of a substrate surface by an inkjet method and drying the liquid material. A conductive thin film is formed in a region where a material is dropped, and the liquid material is dropped in a state where the affinity of the surface of the conductive thin film for the liquid material is higher than that of the substrate surface. Production method. 7. A method of manufacturing a semiconductor device, comprising a step of forming a source and a drain which are constituent layers of a thin film transistor by dropping a liquid material onto a predetermined region of a substrate surface by an inkjet method and drying the material. A conductive thin film is formed in a region where a source is formed and a region where a drain is formed, and the liquid material is dropped while the affinity of the surface of the conductive thin film for the liquid material is higher than that of the substrate surface. A method of manufacturing a semiconductor device, comprising: 8. A method of manufacturing an electro-optical device, comprising a step of manufacturing a semiconductor device by the method according to claim 1. 9. A plurality of pixel electrodes, a transistor provided corresponding to each pixel electrode, a signal line connected to a first region which is one of a source and a drain of each transistor, and a gate of each transistor. And a scanning line connected to the pixel line, and a pixel circuit in which each pixel electrode is connected to a second region that is the other of the source and the drain of each transistor is provided on the substrate. The first portion corresponding to the first region and the second portion corresponding to the second region are adjacent to each other so that the distance between the two portions corresponds to the channel length, and the first electrode and the signal line are connected together. After the first portion is formed on the substrate in a state where the first portion is connected to the signal line and the second portion is connected to the pixel electrode, a liquid material is inkjetted onto the first portion and the second portion. Dripping with And a source and a drain are formed by drying and drying, and the affinity of the surfaces of the first portion and the second portion with the liquid material is higher than that between the both portions of the substrate surface. A method of manufacturing an electro-optical device, which comprises dropping a liquid material. 10. The method of manufacturing an electro-optical device according to claim 9, wherein an organic thin film transistor is formed by dropping a liquid containing a conductive organic material as the liquid material. 11. A portion narrower than the first portion is provided at a boundary position between the first portion and the signal line, and a second portion is provided at a boundary position between the second portion and the pixel electrode. The method of manufacturing an electro-optical device according to claim 7, wherein a narrower portion is provided. 12. A semiconductor device manufactured by the method according to claim 1, or claim 8 or 1.
An electronic device comprising the electro-optical device manufactured by the method according to claim 1.