JP2003309326A - Surface-emitting type semiconductor laser element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface-emitting type semiconductor laser element which can substantially completely control polarization plane. <P>SOLUTION: This surface-emitting type semiconductor laser element comprises an N-type multilayer reflection film 3; an MQW light-emitting layer 4 formed on the film 3; and a P-type multilayer reflection film 6 formed over the layer 4. In this element, the film 6 includes a stripe part 7 processed in a stripe shape at a predetermined interval. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting semiconductor laser device, and more particularly to a surface emitting semiconductor laser device having a multilayer reflective film.

[0002]

2. Description of the Related Art In recent years, a vertical cavity surface emitting semiconductor laser device has been actively developed. Since this surface-emitting type semiconductor laser device has excellent features such as low threshold current, high-speed response, easy two-dimensional array and low cost, it has been widely used in various fields such as optical communication, optical recording and optical measurement. Application is expected.

However, in the conventional surface-emitting type semiconductor laser device, it is difficult to control the plane of polarization in a predetermined direction because the resonator is concentric with the traveling direction of the laser light. For this reason, a phenomenon occurs such that the plane of polarization unstablely switches two planes of polarization along <110> or <1-10> with respect to the crystal orientation of the light emitting layer. As a result, the conventional surface-emitting type semiconductor laser device has a disadvantage that it is difficult to stably control the plane of polarization. As described above, the surface-emitting type semiconductor laser device in which it is difficult to stably control the plane of polarization has a problem that it is difficult to combine it with an optical component such as a polarization beam splitter or a polarizer. Further, also in optical communication, there is a problem that switching of polarization planes hinders high-speed modulation.

Therefore, various methods have been proposed to stably control the plane of polarization of the surface-emitting type semiconductor laser device (see, for example, Patent Document 1). This patent document 1 discloses a method of controlling the plane of polarization of a surface-emitting type semiconductor laser device by using a substrate (tilted substrate) in which the plane orientation of the semiconductor substrate is inclined in a specific direction. In this method, the plane of polarization is controlled by giving a high optical gain to polarized light in a specific direction due to the anisotropy of the crystal orientation of the light emitting layer with respect to the emission direction of laser light.

[0005]

[See Patent Document 1] Japanese Patent No. 3123136

However, in the method disclosed in Patent Document 1 described above, while the optical gain for polarized light in one predetermined direction can be increased,
Since the optical gain for polarized waves in the other direction does not become 0, there is a problem that polarization plane control becomes insufficient.
Also, since the plane orientation of the entire substrate is tilted in a specific direction,
There is also a problem that it is difficult to independently control the polarization planes of the individual surface emitting semiconductor laser elements formed on the same substrate.

The present invention has been made to solve the above problems, and one object of the present invention is to:
An object of the present invention is to provide a surface-emitting type semiconductor laser device capable of performing substantially complete polarization plane control.

Another object of the present invention is to enable independent control of polarization planes of individual surface-emitting type semiconductor laser elements formed on the same substrate in the surface-emitting type semiconductor laser element. Is to

[0008]

In order to achieve the above object, a surface-emitting type semiconductor laser device according to an aspect of the present invention comprises a first multilayer reflective film and a light emitting layer formed on the first multilayer reflective film. A layer and a second multilayer reflective film formed on the light emitting layer, and at least one of the first multilayer reflective film and the second multilayer reflective film includes a stripe portion processed into a stripe shape at a predetermined cycle. The stripe shape in the present invention means an elongated shape.

In the surface-emitting type semiconductor laser device according to this aspect, as described above, at least one of the first multilayer reflective film and the second multilayer reflective film has a stripe portion processed into a stripe shape at a predetermined cycle. With such a configuration, the reflectance for polarized waves in the direction parallel to the stripe portion can be made higher than the reflectance for polarized waves in the direction perpendicular to the stripe portion. In this case, by adjusting the ratio of the period and the width of each material layer forming the multilayer reflective film including the stripe portion, the difference in the refractive index of each material layer with respect to the polarization in the direction perpendicular to the stripe portion is substantially adjusted. Since it can be set to 0, the multilayer reflective film including the stripe portion can function as a reflective film only for polarized waves in a direction parallel to the stripe portion. As a result, since it is possible to oscillate only in the polarized light in the direction parallel to the stripe portion, it is possible to perform substantially complete polarization plane control. Further, in this one aspect, if the directions of the stripe portions of a plurality of surface-emitting type semiconductor laser elements formed on the same substrate are controlled separately, the individual surface-emitting type semiconductors formed on the same substrate can be controlled. The polarization plane of the laser element can be controlled independently.

In the surface-emitting type semiconductor laser device according to the above aspect, preferably, the first multilayer reflective film and the second multilayer film are used.
At least one of the multilayer reflection films including the stripe portion includes the first material layer and the second material layer, and the refractive index of the first material layer with respect to the polarized light in the direction perpendicular to the stripe portion and the second material layer The refractive index is substantially equal. According to this structure, it is possible to easily cause the multilayer reflective film including the stripe portion to function as a reflective film having a high reflectance only for polarized waves in a direction parallel to the stripe portion.

In the surface emitting semiconductor laser device having the first material layer and the second material layer, it is preferable that the ratio of the width of the stripe portion of the first material layer to the period is Wa,
When the ratio of the width and the period of the stripe portion of the material layer is Wb, the refractive index of the first material layer and the refractive index of the second material layer with respect to the polarization in the direction perpendicular to the stripe portion are substantially equal. Wa and Wb are set so that According to this structure, it is possible to easily cause the multilayer reflective film including the stripe portion to function as a reflective film having a high reflectance only for polarized waves in a direction parallel to the stripe portion.

In the above case, the period of the stripe portion is preferably shorter than the emission wavelength of the light emitting layer. According to this structure, it is possible to easily prevent diffraction at the stripe portion and cause the multilayer reflective film including the stripe portion to function as a reflective film having a high reflectance only for polarized waves in a direction parallel to the stripe portion. it can.

In the surface emitting semiconductor laser device according to the above aspect, only the second multilayer reflective film may include the stripe portion. In this case, the stripe portion may be formed in the second multilayer reflective film with a predetermined depth that does not reach the bottom of the second multilayer reflective film.

Wa and Wb are set so that the refractive index of the first material layer and the refractive index of the second material layer with respect to the polarized light in the direction perpendicular to the stripe portion are substantially equal to each other. In the configuration, it is preferable that Wa and Wb are set so that the refractive index of the first material layer and the refractive index of the second material layer with respect to the polarized wave in the direction parallel to the stripe portion are different. According to this structure, the multilayer reflective film including the stripe portion can easily function as a reflective film with respect to the polarized wave in the direction parallel to the stripe portion.

In the surface emitting semiconductor laser device having the first material layer and the second material layer, the refractive index of the first material layer and the refraction of the second material layer with respect to the polarized light in the direction parallel to the stripe portion. The index may be higher than the refractive index of the first material layer and the refractive index of the second material layer with respect to the polarization in the direction perpendicular to the stripe portion.

In the surface-emitting type semiconductor laser device having the first material layer and the second material layer, the first material layer and the second material layer are Al _x Ga having different Al compositions.
_1-x As (0 ≦ x ≦ 1). If such a material is used, the ratio W of the width of the stripe portion of the first material layer to the period
The ratio Wb between a and the width and period of the stripe portion of the second material layer
By controlling and, it is possible to easily make the refractive index of the first material layer substantially equal to the refractive index of the second material layer with respect to the polarized light in the direction perpendicular to the stripe portion. In this case, the light emitting layer may contain Al _y Ga _1-y As (0 ≦ y ≦ 1). The light emitting layer is an AlGaInP layer, I
It may include one layer selected from the group consisting of an nGaAs layer, a GaInNAs layer, InGaAsP, and a nitride-based semiconductor layer.

In the surface-emitting type semiconductor laser device having the first material layer and the second material layer, preferably, the refractive indexes of the first material layer and the second material layer are n1 and n, respectively.
2. When the oscillation wavelength of the light emitting layer is λ, the respective thicknesses t1 and t2 of the first material layer and the second material layer are t
It is set so as to satisfy 1 (t2) = λ / 4 / n1 (n2). According to this structure, it is possible to obtain a multilayer reflective film having a high reflectance for polarized waves in a direction parallel to the stripe portion.

In the surface-emitting type semiconductor laser device according to the above aspect, preferably, the first multilayer reflective film, the light emitting layer and the second multilayer reflective film are formed on an n-type GaAs (100) substrate and have stripes. The n-type GaAs (1
00) is formed so as to extend along the <011> direction of the substrate. With this structure, n-type GaAs (1
(00) It is possible to obtain a multilayer reflective film that functions as a reflective film only for polarized waves parallel to the <011> direction of the substrate.

In the surface-emitting type semiconductor laser device according to the above aspect, preferably, the plurality of surface-emitting type semiconductor laser devices including the first multilayer reflection film, the light emitting layer and the second multilayer reflection film are n-type GaAs (100 ) The stripe portions of the plurality of surface-emitting type semiconductor laser devices formed on the substrate are formed so as to extend along different crystal axis directions of the n-type GaAs (100) substrate. According to this structure, the polarization plane control of each surface emitting semiconductor laser device formed on the same n-type GaAs (100) substrate can be independently performed.

In the surface-emitting type semiconductor laser device according to the above aspect, the stripe portion may be formed in a quadrilateral area when viewed two-dimensionally, or the stripe portion is circular when viewed two-dimensionally. It may be formed in the region.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing a surface emitting semiconductor laser device according to an embodiment of the present invention. FIG. 2 is a plan view showing the surface-emitting type semiconductor laser device according to the embodiment shown in FIG. FIG. 3 is an enlarged cross-sectional view showing a stripe portion of the p-type multilayer reflective film of the surface-emitting type semiconductor laser device according to the embodiment shown in FIG. 4 is shown in FIG.
FIG. 9 is a characteristic diagram showing the relationship between the ratio of the width and period of the stripe portion and the refractive index of the p-type multilayer reflective film of the surface-emitting type semiconductor laser device according to the embodiment shown in FIG. For simplification of the drawing, only a part (two) of the stripe portion of the p-type multilayer reflective film is shown.

First, the structure of the surface-emitting type semiconductor laser device of the present embodiment will be described with reference to FIGS.
In the surface-emitting type semiconductor laser device of this embodiment, as shown in FIGS. 1 and 2, an n-type GaAs buffer layer 2 having a thickness of about 100 nm is formed on an n-type (100) GaAs substrate 1. . This n-type GaAs buffer layer 2
On top, n-type Al _0.12 GaA with a thickness of about 59 nm.
n-type Al _0.9 GaA having an s layer and a thickness of about 70 nm
An n-type multilayer reflective film 3 in which 32 sets of s layers are alternately laminated is formed. The n-type multilayer reflective film 3 is an example of the "first multilayer reflective film" in the present invention. On the upper surface of the n-type multilayer reflective film 3, there is formed a convex portion having a rectangular prism shape with a size of about 30 μm square. On the convex portion of the n-type multilayer reflection film 3, a GaAs layer having a thickness of about 6 nm and about 8 n
An MQW light emitting layer 4 is formed by alternately laminating Al _0.3 GaAs layers having a thickness of m. MQW light emitting layer 4
AlGaAs is formed in the area of about 3 μm square near the center of the upper part.
The low resistance region 5a composed of a layer is formed, and
A current confinement layer 5 composed of a high resistance region made of an Al oxide film is formed in a region excluding the low resistance region 5a. The current confinement layer 5 and the low resistance region 5a have a thickness of about 30 nm.

The current confinement layer 5 and the low resistance region 5a
On top is p-type Al _0.12 GaA with a thickness of about 61 nm.
s layer 6a and p-type Al _0.9 G having a thickness of about 74 nm
A p-type multilayer reflective film 6 is formed by alternately stacking 20 sets of aAs layers 6b. In the region 6c of the p-type multilayer reflective film 6 as well, although not shown, p-type Al _0.12 GaAs
The layers 6a and the p-type Al _0.9 GaAs layers 6b are alternately laminated. The p-type multilayer reflective film 6 is an example of the "second multilayer reflective film" in the present invention.

In this embodiment, 10 stripes 7 are formed on the p-type multilayer reflective film 6 at a cycle of about 0.4 μm (2 in the figure).
Book) is formed. The stripe portion 7 will be described later in detail. A p-type GaAs contact layer 8 having a thickness of about 10 nm is formed on the upper surface of the p-type multilayer reflective film 6. Further, the p-side ohmic electrode 9 is formed on the upper surface of the p-type GaAs contact layer 8 except the upper surface of the stripe portion 7. Also, n
An n-side ohmic electrode 10 is formed on the back surface of the type GaAs (100) substrate 1. The convex portion of the n-type multilayer reflection film 3, the MQW light emitting layer 4, the current confinement layer 5 and the low resistance region 5a, the p-type multilayer reflection film 6, and the p-type GaAs contact layer 8 make the surface of the present embodiment. A quadrangular prism-shaped post portion 11 of the light emitting semiconductor laser device is formed.

Here, the stripe portion 7 of this embodiment is
As shown in FIGS. 1 and 2, a p-type G layer is formed in a square region of about 4 μm square near the center of the p-type multilayer reflective film 6.
The n-type GaAs (100) substrate 1 has a depth from the upper surface of the aAs contact layer 8 to the upper surface of the region 6c.
Is formed so as to extend in the direction along the <011> direction. In addition, as shown in FIG.
Ten (two in the figure) are formed in the cycle of W1. The period W1 of the stripe portion 7 is preferably formed shorter than the oscillation wavelength of the MQW light emitting layer 4 in order to prevent a light diffraction phenomenon and the like. In the present embodiment, the MQW light emitting layer 4
Considering that the oscillation wavelength of 850 nm is 850 nm, the period W
1 is set to about 400 nm (about 0.4 μm).

Further, the stripe portion 7 of this embodiment functions as a multilayer reflection film for polarized waves having an electric field component parallel to the stripe pattern, while it functions for polarized waves having an electric field component perpendicular to the stripe pattern. It is formed so as not to function as a multilayer reflective film. In order to obtain the stripe portion 7 having such a function, in this embodiment, the ratio Wa (= W2 / W1) between the stripe width W2 of the p-type Al _0.12 GaAs layer 6a and the period W1 and the p-type Al _0.9 Stripe width W3 and period W1 of GaAs layer 6b
The ratio Wb (= W3 / W1) of the following is set as follows.

Below, referring to FIGS. 3 and 4, the ratio W
The principle of the method of setting a and the ratio Wb will be described.
P-type Al _0.12 GaAs layer 6a having a refractive index n1 and a refractive index n1
P-type Al _0.9 GaAs with refractive index n2 smaller than
When laminating with the layer 6b, the p-type Al _0.12 GaAs layer 6a
, And the refractive index n2 of the p-type Al _0.9 GaAs layer 6b change with the ratio Wa and the ratio Wb (Wb> Wa), respectively, as shown in FIG. In this case, due to the anisotropy of the stripe pattern of the stripe portion 7, the refractive index for polarized waves parallel to the stripe pattern is larger than the refractive index for polarized waves perpendicular to the stripe pattern. In FIG. 4, the solid line indicates the p-type multilayer reflective film 6 for polarized waves parallel to the stripe pattern.
Shows the change in the effective refractive index, and the broken line shows the change in the effective refractive index of the p-type multilayer reflective film 6 with respect to the polarization perpendicular to the stripe direction. In the ratios Wa and Wb,
P-type Al _0.12 for polarized waves parallel to the stripe pattern
The refractive index of the GaAs layer 6a is n1a (point A), p-type Al _0.12 for polarization perpendicular to the stripe pattern, and the refractive index of the GaAs layer 6a is n1b (point C), p-type Al _0.9 for polarization parallel to the stripe pattern. The refractive index of the GaAs layer 6b is n2a (point B), and the refractive index of the p-type Al _0.9 GaAs layer 6b with respect to the polarization perpendicular to the stripe pattern is n2b.
(Point D). At this time, the refractive index at point C (n1b)
The ratios Wa and Wb are set so that the refractive index (n2b) at the point D becomes the same value.

As described above, when the ratios Wa and Wb are set, the difference in refractive index (n) determined by points A and B shown in FIG.
1a-n2a), the p-type Al _0.12 GaAs layer 6a and the p-type Al _0.9 GaAs layer 6b are laminated, so that the p-type Al _0.12 GaAs layer 6a and the p-type Al _0.9
By setting the thickness of the GaAs layer 6b to an appropriate thickness, the GaAs layer 6b functions as a reflection film for polarized waves parallel to the stripe pattern of the stripe portion 7, while it functions as a reflective film for polarized waves perpendicular to the stripe pattern. Can be disabled as.

According to the above principle, in the present embodiment, the ratio Wa of the p-type Al _0.12 GaAs layer 6a is 0.45.
And the ratio W of the p-type Al _0.9 GaAs layer 6b
b is set to 0.5. As a result, for polarized waves parallel to the stripe pattern of the stripe portion 7, p-type Al is used.
The effective refractive index n1a of the _0.12 GaAs layer 6a becomes 3.51 and the effective refractive index n2a of the p-type Al _0.9 GaAs layer 6b becomes 2.88. In this case, p-type Al _0.12 Ga
Since an effective refractive index difference is generated between the As layer 6a and the p-type Al _0.9 GaAs layer 6b, the p-type multilayer reflective film 6 reflects the polarized light parallel to the stripe pattern of the stripe portion 7. Functions as a film. On the other hand, for the polarization perpendicular to the stripe pattern of the stripe portion 7, the effective refractive index n1b of the p-type Al _0.12 GaAs layer 6a becomes 1.7 and the effective refractive index of the p-type Al _0.9 GaAs layer 6b. n2b is also 1.7. In this case, p-type Al _0.12 Ga
Since there is no difference in refractive index between the As layer 6a and the p-type Al _0.9 GaAs layer 6b, the p-type multilayer reflective film 6 has a stripe portion 7
For the polarization perpendicular to the stripe pattern of
Does not function as a reflective film.

Further, for the thickness t1 of the p-type Al _0.12 GaAs layer 6a and the thickness t2 of the p-type Al _0.9 GaAs layer 6b, a film capable of obtaining a high reflectance characteristic can be obtained by using the following equation (1). The thickness can be calculated.

T1 (t2) = λ / 4 / n (1) In the expression (1), λ is the oscillation wavelength of the surface-emitting type semiconductor laser device. The oscillation wavelength λ of the surface-emitting type semiconductor laser device of this embodiment is 850 nm. Also, n is p
_-Type Al _0.12 GaAs layer 6a and p-type Al _0.9 GaAs
Effective refractive indices n1a, n1b, n2a and n2 of layer 6b
b.

Calculation using the above equation (1) yields p-type A
The thickness t1 of the l _0.12 GaAs layer 6a is about 61 nm, and the thickness t2 of the p-type Al _0.9 GaAs layer 6b is
It becomes about 74 nm. As a result, the reflectance of the p-type multilayer reflective film 6 becomes 98% to 99%.

In the surface-emitting type semiconductor laser device of this embodiment, as described above, the p-type multilayer reflection film 6 is configured to include the stripe portion 7 processed into a stripe shape, and the p-type multilayer reflection film is formed. P-type Al _0.12 G constituting 6
By adjusting the ratio Wa and Wb between the period W1 of the stripe portion 7 and the width of the stripe portion 7 in the aAs layer 6a and the p-type Al _0.9 GaAs layer 6b, the p-type multilayer reflective film 6 is parallel to the stripe pattern. It can function as a reflection film only for polarized waves in the direction. As a result, only polarized waves parallel to the stripe pattern of the stripe portion 7 can be oscillated, so that substantially complete polarization plane control can be performed.

Further, in the surface-emitting type semiconductor laser device of this embodiment, when a plurality of surface-emitting type semiconductor laser devices are formed on the same n-type GaAs (100) substrate 1, the stripe pattern of the stripe portion 7 is formed. By forming the extending directions in different directions, the same n-type GaAs (1
00) There is also an advantage that the polarization plane control of each surface emitting semiconductor laser element formed on the substrate 1 can be independently performed.

FIGS. 5-8, 10 and 11 show FIG.
FIG. 6 is a cross-sectional view for explaining the manufacturing process of the surface-emitting type semiconductor laser device according to the embodiment of the present invention shown in FIG. FIG. 9 is a plan view in the manufacturing process shown in FIG. Next, the manufacturing process of the surface-emitting type semiconductor laser device according to the present embodiment will be explained with reference to FIGS. 1 and 5 to 10.

First, as shown in FIG. 5, n-type GaAs
N having a thickness of about 100 nm on a (100) substrate 1
The type GaAs buffer layer 2 is formed. And n-type Ga
An n-type Al _0.12 GaAs layer having a thickness of about 59 nm and an n-type A having a thickness of about 70 nm are formed on the As buffer layer 2.
By stacking 32 pairs of 1 _0.9 GaAs layers,
The type multilayer reflective film 3 is formed. After that, the n-type multilayer reflective film 3
The MQW light emitting layer 4 is formed by stacking a GaAs layer having a thickness of about 6 nm and an Al _0.3 GaAs layer having a thickness of about 8 nm on the upper layer. Then, a p-type AlGaAs layer 5b having a thickness of about 30 nm is formed on the MQW light emitting layer 4. Then, a p-type Al _0.12 GaAs layer 6a having a thickness of about 61 nm and a p-type Al _0.9 GaAs having a thickness of about 74 nm are formed on the p-type AlGaAs layer 5b.
The p-type multilayer reflective film 6 is formed by stacking 20 sets of layers 6b. Furthermore, about 10 is formed on the p-type multilayer reflective film 6.
A p-type GaAs contact layer 8 having a thickness of nm is formed.

Next, as shown in FIG. 6, p-type Ga is formed by using a photolithography technique and a dry etching technique.
By removing a part of the region from the As contact layer 8 to the n-type multilayer reflective film 3, the post portion 11 having a quadrangular prism shape is formed. Then, by performing a heat treatment for several minutes in a steam atmosphere at about 450 ° C., AlGaA
Only the peripheral portion of the s layer 5b is oxidized. This allows AlG
The high-resistance current confinement layer 5 as shown in FIG. 7 is formed only in the peripheral portion of the aAs layer 5b. And AlGa
A low resistance region 5a forming a current path is formed in a region of about 3 μm square near the center of the As layer 5b.

Next, as shown in FIG. 8, on the upper surface of the p-type GaAs contact layer 8 of the post portion 11 and on the exposed upper surface of the n-type multilayer reflective film 3, a mask layer made of Ni for fine processing is formed. 12 is formed. As shown in FIGS. 8 and 9, the mask layer 12 has a stripe shape of about 0.4 μm period and a width of about 0.2 μm in a 4 μm square region near the center of the upper surface of the post portion 11. Groove portion 12a
Are formed along the <011> direction of the n-type GaAs (100) substrate 1.

Then, as shown in FIG. 10, the mask layer 1
Etching is performed using the RIBE method with 2 as a mask. As a result, the stripe portion 7 formed of a fine lattice having a depth that does not reach the current constriction layer 5 is formed.

After that, Al forming the stripe portion 7 is formed by an etchant such as ammonia or tartaric acid.
Only the _0.12 GaAs layer 6a is selectively etched by a predetermined amount. As a result, as shown in FIG.
_0.12 GaAs layer 6a has a width W2 (see FIG. 3) of about 0.18
It is formed to have a thickness of μm. In this case, p-type Al _0.9 G
The width W3 (see FIG. 3) of the aAs layer 6b is formed to be about 0.2 μm.

Finally, as shown in FIG. 1, p-type GaA
In the region on the s contact layer 8 excluding the stripe portion 7, p
Side ohmic electrode 9 is formed, and n-type GaAs is formed.
On the back surface of the (100) substrate 1, the n-side ohmic electrode 10 is formed.
To form. In this way, the surface-emitting type semiconductor laser device of this embodiment is formed.

It should be understood that the present embodiment disclosed this time is illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the present embodiment but by the claims, and further includes meanings equivalent to the claims and all modifications within the scope.

For example, in the above-described embodiment, the case where the oscillation wavelength of the light emitting layer is 850 nm has been described, but the present invention is not limited to this, and a light emitting layer having another oscillation wavelength may be used. For example, the same effect can be obtained even with a light emitting layer having an oscillation wavelength in the range of 750 nm to 870 nm. In this case, it is necessary to adjust the thickness of each multilayer reflective film and the period and width of the fine lattice of the stripe portion formed on the post portion according to the above-described principle.

Further, in the above embodiment, the light emitting layer made of GaAs / AlGaAs is formed on the GaAs substrate, but the present invention is not limited to this, and AlG is formed on the GaAs substrate.
You may form the light emitting layer which consists of aInP. This makes it possible to realize an oscillation wavelength in the red region having a wavelength in the range of 600 nm to 700 nm. In this case, for example, for an oscillation wavelength of 650 nm, an Al _0.5 GaAs layer having a thickness of about 49 nm and an Al _0.95 GaAs layer having a thickness of about 54 nm are alternately laminated about 30 sets to form a multilayer reflective film. do it.

A light emitting layer made of InGaAs may be formed on the GaAs substrate. As a result, 850n
It is possible to realize an oscillation wavelength having a wavelength in the range of m to 1500 nm. In this case, for example, the oscillation wavelength 98
Al _0.12 G having a thickness of about 69 nm with respect to 0 nm
Al _0.9 GaAs with an aAs layer and a thickness of about 80 nm
The multilayer reflective film may be formed by alternately stacking about 30 sets of layers.

In the above embodiment, the light emitting layer made of GaAs / AlGaAs is formed on the GaAs substrate, but the present invention is not limited to this, and a light emitting layer made of GaInNAs may be formed. By this, 850 nm to 15
An oscillation wavelength having a wavelength in the range of 00 nm can be obtained.

Although the GaAs substrate is used in the above embodiment, the present invention is not limited to this, and another substrate may be used. For example, an InP substrate may be used. In this case, by using the light emitting layer made of InGaAsP, an oscillation wavelength having a wavelength in the range of 1.2 μm to 1.6 μm can be realized. As the light emitting layer, A
A nitride semiconductor layer made of lGaN, InGaN, BInAlGaN, or the like, or a ZnO layer having a wurtzite structure may be used. In addition, this wurtzite structure ZnO has Be, M
A mixed crystal semiconductor containing g, Cd, Hg, Te, S or Se may be used. Furthermore, ZnSSe or CdSSe, which is a group 2-6 semiconductor having a wurtzite structure or a zinc blende structure, may be used as the light emitting layer material. Also,
Be, Mg, Zn, Cd,
Similar effects can be obtained even when a mixed crystal semiconductor containing Hg, S, Se, or Te is used.

In the above embodiment, the MQW light emitting layer 4 is used.
Although the stripe portion 7 is formed on the p-type multilayer reflective film 6 located above, the present invention is not limited to this, and the stripe portion is formed on the n-type multilayer reflective film 3 located below the MQW light emitting layer 4. Even if it is formed, the same effect can be obtained.

In the above embodiment, the surface-emitting type semiconductor laser device having the square light emitting portion is formed, but the present invention is not limited to this, and the light emitting portion may have another shape. For example, as shown in the plan view of FIG. 12, a surface emitting semiconductor laser device having a circular light emitting portion may be formed. In this case, p above the n-type multilayer reflective film 13
The p-type contact layer 18 is formed, and inside the p-type contact layer 18, stripe portions 17 processed into a stripe shape with a predetermined cycle and width are formed. On the p-type contact layer 18 except the upper surface of the stripe portion 17, p
The side ohmic electrode 19 is formed. Note that FIG.
Other configurations of the surface-emitting type semiconductor laser device shown in
This is similar to the above-described embodiment.

[0051]

As described above, according to the present invention, it is possible to provide a surface emitting semiconductor laser device capable of performing substantially complete polarization plane control.

[Brief description of drawings]

FIG. 1 is a sectional view showing a surface-emitting type semiconductor laser device according to an embodiment of the present invention.

FIG. 2 is a plan view showing a surface-emitting type semiconductor laser device according to the embodiment shown in FIG.

3 is an enlarged cross-sectional view showing a stripe portion of a p-type multilayer reflective film of the surface-emitting type semiconductor laser device according to the embodiment shown in FIG.

FIG. 4 is a characteristic diagram showing the relationship between the ratio of the width of the stripe portion to the period of the surface-emitting type semiconductor laser device according to the embodiment shown in FIG. 1 and the refractive index of the p-type multilayer reflective film.

FIG. 5 is a cross-sectional view illustrating the manufacturing process of the surface-emitting type semiconductor laser device according to the embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating the manufacturing process of the surface-emitting type semiconductor laser device according to the embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating the manufacturing process of the surface-emitting type semiconductor laser device according to the embodiment of the present invention.

FIG. 8 is a cross-sectional view illustrating the manufacturing process of the surface-emitting type semiconductor laser device according to the embodiment of the present invention.

9 is a plan view of the manufacturing process shown in FIG.

FIG. 10 is a cross-sectional view illustrating the manufacturing process of the surface-emitting type semiconductor laser device according to the embodiment of the present invention.

FIG. 11 is a cross-sectional view illustrating the manufacturing process of the surface-emitting type semiconductor laser device according to the embodiment of the present invention.

FIG. 12 is a plan view for explaining the structure of a surface-emitting type semiconductor laser device having a concentric laser beam emission shape according to a modification of the embodiment shown in FIGS. 1 and 2.

[Explanation of symbols]

3, 13 n-type multilayer reflective film (first multilayer reflective film) 4 MQW light emitting layer (light emitting layer) 6 p-type multilayer reflective film (second multilayer reflective film) 7,17 Stripe part

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Atsushi Tajiri             2-5-3 Keihan Hondori, Moriguchi City, Osaka Prefecture             Within Yo Denki Co., Ltd. (72) Inventor Yasuhiko Nomura             2-5-3 Keihan Hondori, Moriguchi City, Osaka Prefecture             Within Yo Denki Co., Ltd. (72) Inventor Ryoji Hiroyama             2-5-3 Keihan Hondori, Moriguchi City, Osaka Prefecture             Within Yo Denki Co., Ltd. F-term (reference) 5F073 AA02 AA03 AA74 AB17 BA04                       CA04 CB02 DA25 EA22

Claims (4)

[Claims] 1. A first multilayer reflective film, comprising: a first multilayer reflective film; a light emitting layer formed on the first multilayer reflective film; and a second multilayer reflective film formed on the light emitting layer. Further, at least one of the second multilayer reflection film includes a surface emitting semiconductor laser device including a stripe portion processed into a stripe shape at a predetermined cycle. 2. At least one of the first multilayer reflective film and the second multilayer reflective film including the stripe portion includes a first material layer and a second material layer, and a direction perpendicular to the stripe portion. The first for the polarization of
The surface emitting semiconductor laser device according to claim 1, wherein the refractive index of the material layer and the refractive index of the second material layer are substantially equal to each other. 3. When the ratio of the width and period of the stripe portion of the first material layer is Wa and the ratio of the width and period of the stripe portion of the second material layer is Wb, the stripe portion is The Wa and the Wb are set so that the refractive index of the first material layer and the refractive index of the second material layer with respect to the polarized wave in the vertical direction are substantially equal to each other.
The surface-emitting type semiconductor laser device described in 1. 4. The surface-emitting type semiconductor laser device according to claim 1, wherein the stripe portion has a cycle shorter than an emission wavelength of the light emitting layer.