JP2003297864A - Method of inspecting semiconductor element and manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a semiconductor element inspecting method detecting the sealing defect of a package that can not be detected by a normal inspection in a manufacturing line at the time of manufacturing a semiconductor element. <P>SOLUTION: In a mold 10 forming a package, a frame assembly 9 with a semiconductor chip 1 and the internal terminals 2a of leads 2 connected by bonding wires 3 having a curved top is set, and an electrode layer 16 that is insulated from the lead 2 by an insulating layer 13 is formed on the surface of a cavity 12 of the mold. When a conduction detector 21 detects conduction between the electrode layer 16 and the lead 2, an identifying recorder 22 recognizes and records that the semiconductor element that is manufactured at the cavity has the bonding wire exposed from the surface of the package. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for inspecting a semiconductor element encapsulated by a resin package, and more particularly to a semiconductor element having a bonding wire apex exposed or abnormally close to the surface of the package. ,
The present invention relates to a method for inspecting a semiconductor element that is detected in a sealing step of injecting a resin into a mold, and a semiconductor element manufacturing apparatus that enables this inspection.

[0002]

2. Description of the Related Art Generally, in a semiconductor element encapsulated by a resin package, a semiconductor chip and an inner end of a lead are usually connected by a bonding wire made of a fine gold wire, and an outer end of the lead is exposed to the outside. In this state, the semiconductor chip, the bonding wire, and the inner end of the lead are integrally sealed with a package resin.

FIG. 10 shows a sealing step which is one step in manufacturing the semiconductor element according to a conventional manufacturing method. In order to manufacture this semiconductor element, first, in a frame assembly process, the semiconductor chip 1 is placed on the stage 6 formed on the frame 5, and the pad 1 of the semiconductor chip 1 is mounted.
A and the inner end 2a of the lead formed on the frame 5 are connected by the bonding wire 3. At this time, the bonding wire 3 is formed in an arc shape having a curved apex. The frame assembly 9 obtained by this assembly work is set in the mold 100 in the next mold setting process.

The mold 100 has a mold body 111 composed of split molds 111a and 111b, a cavity 112 formed in the mold body 111, a runner 114 and a gate 115 for supplying a resin for packaging into the cavity 112. ing. The split molds 111a and 111b are controlled in temperature by a mold driving device (not shown), and sandwich the outer ends 2b of the leads in an airtight manner. The cavity 112 is formed in a shape that defines the outer shape of the package of the semiconductor element. Runner 114 and gate 1
Reference numeral 15 is a passage for injecting an uncured thermosetting resin compound (hereinafter simply referred to as “resin”) into the cavity 112, which is formed on the mating surfaces of the split molds 111a and 111b, and one end of the runner 114 is The gate 115 communicates with a heating pot with a plunger (not shown), and the gate 115 is opened at a predetermined position in the cavity 112.

After the frame assembly 9 is set in the mold 100, the mold 100 is closed and the runner 11 is used in the next sealing step.
4 and the gate 115 to inject resin into the cavity 112 to fill the cavity. When the predetermined temperature is maintained after the filling, the resin solidifies in the cavity. When the frame assembly 9 opened after being solidified and sealed with a resin is taken out and the outer terminal 2b of the lead is separated from the frame 5, a semiconductor element sealed with a resin package is obtained.

[0006]

In the above sealing step,
During the resin injection, the bonding wire 3 inside the cavity 112 is deformed, and a part thereof, for example, a curved apex is part of the cavity 1 as shown as a bonding wire 3X in FIG.
It has been pointed out that the wall surface of 12 may be contacted. The problem is that in the process of injecting the resin into the cavity 112 to fill the cavity space, the highly viscous resin pushes up the semiconductor chip 1 together with the stage 6 and the semiconductor chip 1
Is considered to be generated by moving from a predetermined position. In any case, when the resin is filled with the bonding wire 3X in contact with the wall surface of the cavity 112 and the resin is cured, the manufactured semiconductor element has the bonding wire exposed on the surface of the package. In general, a semiconductor device that has completed the sealing process is subjected to a continuity test in the manufacturing line, and if there is a disconnection or short circuit in the circuit or wiring in the package, it is detected and removed from the manufacturing line as a defective product. However, the above-mentioned products with exposed bonding wires are not detected by the above-mentioned continuity inspection and are classified as non-defective products, unless other continuity faults such as disconnection or short-circuit occur at the same time. However, there is a possibility that the exposed portion of the bonding wire may come into contact with another electric circuit, or moisture may enter from the exposed portion of the bonding wire to deteriorate the circuit characteristics.

Further, even if the bonding wire is not exposed from the package in appearance, as shown by the bonding wire 3Y in FIG. 11, the curved apex of the bonding wire and the package surface are caused by the rising of the semiconductor chip 1 during resin injection. The margin δ3Y between and may be small. Even in this case, it is not detected by the continuity test on the manufacturing line, but after being shipped as a non-defective product, the package film may peel off and the bonding wire may be exposed, or moisture may enter from the thin package film and deteriorate the characteristics. There is a possibility that the reliability of the manufactured semiconductor device may be impaired.

The present invention has been made to solve the above problems, and an object thereof is to detect a semiconductor element in which a bonding wire is exposed or abnormally approaches the surface of a package in a sealing step. Another object of the present invention is to provide an inspection method and a semiconductor device manufacturing apparatus that enables this inspection.

[0009]

In order to solve the above-mentioned problems, the present invention is directed to the semiconductor device in which the semiconductor chip and the inner end of the lead are connected by a bonding wire, and the outer end of the lead is exposed to the outside. When manufacturing a semiconductor element in which a chip, the bonding wire, and an inner end of the lead are sealed in a package made of resin, a part of the bonding wire detects a semiconductor element exposed on the surface of the package. Method,
An electrode that is electrically insulated from the lead is formed on the surface of the cavity of a mold that is filled with resin to form the package. When conduction is detected between the electrode and the lead, the electrode is manufactured in the cavity. The provided semiconductor device provides a method of inspecting a semiconductor device for recognizing that a bonding wire is exposed on a surface of a package.

The exposure of the bonding wire on the surface of the package is nothing but the contact of the bonding wire with the wall surface of the cavity before the package is formed in the mold. Therefore, if an electrode electrically insulated from the lead is formed on the surface of the cavity and the conduction between the electrode and the lead is monitored, the conduction is detected at the moment when the bonding wire comes into contact with the cavity wall surface. The occurrence of the disorder can be recognized. When the conduction of the electrodes is detected, the semiconductor device manufactured in the cavity is a defective product in which the bonding wire is exposed on the surface of the package, and thus can be removed from the manufacturing line in the subsequent steps, for example.

According to the present invention, when manufacturing a semiconductor element in which the semiconductor chip, the bonding wire, and the inner end of the lead are sealed in a package made of resin, the apex of the bonding wire is the package. A method of detecting a semiconductor element that has abnormally approached the surface of the bonding surface beyond an allowable limit, wherein the semiconductor chip is fixed to one end of a bonding wire for detection having a vertex higher than the peaks of other bonding wires, The other end of the detection bonding wire is connected to the detection lead, and an electrode electrically insulated from the detection lead is provided on the cavity surface of the mold that is filled with resin to form the package. When the conduction is detected between the electrode formed and the detection lead, the semiconductor element manufactured in the cavity is Curved apex of another bonding wire to provide a method of inspecting a semiconductor device certified to have abnormal approach exceeds the allowable limit to the surface of the package.

In this case, the apex of the detection bonding wire used for connecting the semiconductor chip and the detection lead is higher than the apexes of other bonding wires connected to the semiconductor chip (based on the surface of the semiconductor chip). It is placed high. If this height difference is set as an allowable limit for approaching the surface of the package, when the conduction between the electrode and the detection lead is detected, the bonding wire for detection is formed in the package of the manufactured semiconductor element. It can be recognized that the margin between the apex of the bonding wire other than and the package surface exceeds the allowable limit. When the conduction is detected, the semiconductor device manufactured in the cavity may be a defective product in which the bonding wire abnormally approaches the surface of the package beyond the allowable limit. Or you can set it again.

The present invention is also a semiconductor device manufacturing apparatus to which the above-described semiconductor device inspection method is applied, wherein the mold is a split mold, and the electrodes are formed on the cavity surface of at least one of the split molds. And, there is provided a semiconductor device manufacturing apparatus in which an insulating layer is formed between the electrode and the mating surface of the split mold. It is preferable that the electrode is formed on the surface of the cavity immediately adjacent to the apex of the bonding wire or the detection bonding wire.

The mold used to mold the package is usually
It consists of a metal split mold. On the other hand, the frame assembly on which the semiconductor chip is mounted is set in the cavity with the outer ends of the leads sandwiched by the mating surfaces of the split mold. Therefore, if an electrode is formed on the cavity surface of one of the split molds and an insulating layer is formed between this electrode and the mating face of the split mold, the electrode is used as a lead or for detection sandwiched in the mating face of the split mold. It is electrically insulated from the leads. Nevertheless, if conduction is detected in the electrodes,
It indicates that the apex of the bonding wire or the bonding wire for detection contacts the cavity surface of the split mold. If the electrode is formed on the surface of the cavity immediately adjacent to the apex of the bonding wire or the bonding wire for detection, the object of detection is achieved with a very small electrode area, and a part of the inner wall of the cavity is formed of a material other than the mold metal. This minimizes the obstacles that may result from the mismatch of expansion and heat transfer coefficients.

The present invention further comprises means for discriminating a semiconductor device manufactured in the cavity from other semiconductor devices when the conduction on the electrode on the surface of the cavity is detected and storing the discrimination information so as to be output. An apparatus for manufacturing a semiconductor element having the same is provided.

In general, a semiconductor element manufacturing line uses a multi-frame assembly in which a large number of units in which semiconductor chips and leads are connected by bonding wires are arranged on a common frame. In addition, sealing is performed by a multi-cavity mold in which a large number of cavities for accommodating each unit of the above-mentioned multiple frame assembly are arranged. In this manufacturing line, an identification mark is given to each common frame and each unit. Therefore, when the continuity is detected in a unit of a multi-unit frame assembly, a means for storing the identification information so that the identification information can be output stores the identification symbol of the unit and, if necessary, the identification information. Can be output to, for example, a sorting device, and the semiconductor element after being separated from the common frame can be excluded from the manufacturing line as a defective product.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described with reference to specific examples, but these specific examples do not limit the present invention in any way. Further, the attached drawings are for explaining the idea of the present invention, and the elements unnecessary for the explanation of the present invention are omitted, and the shapes, the dimensional ratios, the numbers, etc. of the illustrated elements are not necessarily the actual ones. Not reflected.

(Embodiment 1) FIG. 1 shows an example of a manufacturing line to which the semiconductor element inspection method of the present invention is applied. Explaining the outline of this manufacturing line, first, in a frame assembling process, a semiconductor chip is installed in each unit of a common frame in which a plurality of units are arranged, and the semiconductor chip and a lead formed in each unit of the frame are bonded. Wired together to form a multiple frame assembly. In the mold setting step, the frame assembly is set on the mating surface of the split mold having the array of cavities and closed. In the sealing step, a sealing resin is injected into each cavity of the mold, the resin is cured in the cavity after filling, and then the mold is opened. In the separating step, the individual semiconductor elements completed by forming the package by curing the resin are separated from the frame. In the sorting process, the semiconductor elements are classified into good products and defective products based on the information from the sealing inspection process, and the good products are sent to the finishing process. In the finishing process, the circuit is inspected for each semiconductor element as well as the external appearance and markings, etc., and shipped as semiconductor element products.

Between the end of the mold setting step and the end of the sealing step, in the sealing inspection step, conduction between the leads formed in the frame and the electrode layers formed in the respective cavities of the mold is established. If there is continuity detected, record the identification code of the corresponding cavity and the identification code given to the individual in the cavity, and alarm the sealing process and operate the corresponding cavity. A signal for checking or controlling the conditions is transmitted, and a signal for excluding the corresponding semiconductor element individual as a defective product from the manufacturing line is transmitted for the selection process.

FIG. 2 is a sectional view showing an aspect of a mold setting process in the manufacturing line. Here, the structure of one unit of the mold used in the manufacturing line is shown.
In FIG. 2, the mold 10 includes a mold body 11 including split molds 11a and 11b, a cavity 12 formed in the mold body 11, a runner 14 and a gate 15 for supplying a resin for a package into the cavity 12. And an electrode layer 16. Further, the detection recording device 20 includes the continuity detector 2
1, an identification recording device 22, and a power supply 23.

The temperature of the split molds 11a and 11b is controlled by a mold driving device (not shown), and the frame assembly 9 set in the cavity 12 on both mating surfaces.
The outer lead end 2b of the lead can be sandwiched in an airtight manner. The split mold 11a of the set frame assembly 9 on which the bonding wire 3 is raised has an insulating layer 13 formed on its mating surface. The insulating layer 13 may be a film or a coating film of fluororesin, silicone resin, polyimide resin, or the like. Although not shown, the split molds 11a of the adjacent units are electrically insulated from each other.

The cavity 12 includes the semiconductor chip 1 of the set frame assembly 9, the bonding wire 3 and the inner end 2a of the lead 2 in a non-contact manner, and the shape of the wall surface defines the outer shape of the package of the semiconductor element. To do. The runner 14 and the gate 15 are passages for injecting an uncured thermosetting resin compound (hereinafter simply referred to as “resin”) into the cavity 12, and are formed on the mating surfaces of the split dies 11a and 11b. One of the terminals communicates with a heating pot with a plunger (not shown), and a gate 15
Is open at a predetermined position in the cavity 12. The electrode layer 16 is made of a conductor, for example, a plate of copper, titanium, stainless steel, or the like, and is attached so as to cover the entire upper surface of the split mold 11a. From this electrode layer, wiring is drawn out of the split mold 11a. .

The detection recording device 20 has a continuity detector 21, an identification recording device 22 and a power supply 23, and is inserted in a circuit connecting the electrode layer 16 and the frame 5. In this circuit, the frame 5 is preferably set to the ground potential.
The continuity detector 21 gives an audible and / or visual alarm when the electrical resistance between the electrode layer 16 and the frame 5 falls below a predetermined threshold value and sends continuity data to the identification recording device 22. The identification recording device 22 records the identification symbol of the cavity in which conduction is detected and the identification symbol given to the individual in the cavity, and a signal for checking or controlling the operating conditions of the corresponding cavity toward the sealing step. In addition, a signal for rejecting the corresponding semiconductor element individual as a defective product from the manufacturing line is transmitted toward the sorting step.

FIG. 3 shows one unit of the multiple frame assembly 9 to be inspected. The frame assembly 9 comprises a semiconductor chip 1, bonding wires 3 and a frame 5. In the frame 5, a stage 6 on which the semiconductor chip 1 is placed, a stage bar 7 for suspending the stage, and a lead stay 8 for supporting the array of the leads 2 are integrally formed by punching a metal plate.

In the frame assembly process, first, the semiconductor chip 1 is mounted on the stage 6. Next, the pad 1p of the semiconductor chip 1 and the inner end 2a of the lead 2 are connected by the bonding wire 3 to form the frame assembly 9. At this time, the bonding wire 3 is formed in an arc shape having a curved apex. In the multiple frame assembly 9 used in the manufacturing line, the units are arranged in a matrix corresponding to the cavity arrangement of the mold. And each frame assembly has a serial number that can be read optically.
An identification number is also given to each unit.

FIG. 4 shows one mode in the sealing step.
In the mold setting process of the manufacturing line, the frame assembly 9 is set in the mold 10 and then the mold is closed, and in the next sealing process, the cavity 1 is passed through the runner 14 and the gate 15.
The resin is injected into the inside of 2 to fill the cavity. The resin injected at this time is highly viscous and begins to cure immediately after injection in the heated mold.
The viscosity gradually increases even while flowing inside. If the resin solidifies during filling, filling failure and generation of voids will occur, so the resin is injected from the gate 15 at high pressure and high speed. When at least a part of the semiconductor chip 1 is pushed up by the fluid pressure of the resin under such a condition, the curved apex of the bonding wire 3 also rises. Since the gap (margin) between the curved apex and the cavity wall surface is originally set to an allowable limit (for example, 100 μm) approximation in order to make the semiconductor element compact, as shown by the bonding wire 3X, the electrode with the curved apex having the cavity wall surface is used. In some cases, it may come into contact with the layer 16. When the curved apex of the bonding wire 3 comes into contact with the electrode layer 16, the frame 5 is connected to all the leads 2 ... Therefore, no matter which bonding wire comes into contact with the electrode layer, there is a gap between the electrode layer 16 and the frame 5. Conduction is established in. When the electrode layer 16 becomes conductive, the continuity detector 21 detects and visually displays a meter, and the continuity data is recorded by the identification recording device 2
Send to 2. The identification recording device 22 records the identification number of the cavity in which conduction is detected, the identification number given to the individual in the cavity, and the serial number of the frame assembly containing the individual, and as described above, for example, the sealing step. And disseminate necessary information for the sorting process.

FIG. 5 shows an example of a curved state of the bonding wire. In addition to a simple mountain shape as shown in (a), a flat top as shown in (b), For example, the one having two peaks shown in (c) is exemplified.

FIG. 6 shows a modified example of the first embodiment, and the method of this example is such that a set condition inspection step is provided after the mold setting step in the method of the first embodiment. In this set condition inspection step, the presence or absence of conduction between the lead and the electrode layer 16 of the mold 10 is detected, and if the conduction is matched, the identification number of the corresponding cavity is recorded and displayed on a display device or the like. To do. At the same time, first, a cavity inspection is performed by energizing and inspecting whether the electrode layer 16 embedded in the mold 10 is in an insulating state. Specifically, the mold 10 is clamped by sandwiching the dummy lead, and the electrical resistance between the dummy lead and the lead line from the electrode layer 16 is measured, or conduction between the upper mold 11a and the lower mold 11b is measured. to see.
If there is a short circuit, it is judged that there is a foreign substance in the mold 10, and the mold 1
Clean the inside of 0.

If the cavity inspection passes, then the frame inspection is performed. This frame inspection is intended to remove what is originally abnormal such as bending of the frame 5, and is performed by using the bonded leads of the frame assembly and measuring the electrical resistance between the leads. . If the frame inspection passes, lead inspection is performed. This lead inspection is intended to remove what is originally abnormal such as bending of the leads, and uses the bonded leads of the frame assembly to measure the electrical resistance between the leads.

If these inspections are passed, the frame assembly is set again in the mold 10, and if the presence or absence of continuity is checked again, if there is no continuity, the process proceeds to a sealing step, resin sealing is performed, and then sealing is performed. A continuity test is performed on the semiconductor device after stopping. If there is conduction here, the identification number of the cavity of the mold is recorded and displayed, and the defective chip is displayed and sent to the cutting step. If there is no continuity, send it to the separation process as it is. The steps after the cutting step are the same as those in the first embodiment.

(Embodiment 2) This embodiment is substantially the same as that of Embodiment 1 except that the structure of the mold is different. Therefore, here, the configuration of the mold in the present embodiment will be mainly described in detail. FIG. 5 is a cross-sectional view showing one aspect of the mold setting process in the second embodiment. The mold used in this embodiment is divided into three as shown by split molds 11a, 11b, and 11c. Of these, split molds 11a, 1
1b has an integrated structure in which a plurality of units each having a cavity 12 are arranged, and the frame assembly 9 of multiple mountings is sandwiched between the mating surfaces thereof. Only the upper half side wall of each cavity 12 is formed in the split mold 11a, and the top of the cavity is open. The top surface of the split mold 11a is covered with an insulating layer 13 except for the top of each cavity.

The split mold 11c is mounted on the insulating layer 13 separately for each cavity so as to cover the top of each cavity 12. An electrode layer 16 is formed on the lower surface of the split molds 11c, and the electrode layer 16 forms the top wall surface of each cavity 12. Wirings are individually drawn out from the respective electrode layers 16, and the wirings are not described in detail, but a circuit is formed with the frame 5 of the frame assembly 9 via a detection recording device including the continuity detector 21 and a power source. is doing. The detection recording apparatus including the continuity detector 21 sequentially scans the electrode layers 16 to monitor the presence or absence of continuity during the sealing operation. Split mold 11
When the frame assembly 9 is set between a and 11b, the electrode layers 16 ...
And electrically isolated.

In the mold setting process, the frame assembly 9 is set in the mold of the present embodiment and the mold is closed, and when the resin is injected into the series of cavities 12 ... In the sealing process, each is heated from a heating pot with a plunger (not shown). The injection pressure and flow velocity of the resin injected into the respective cavities 12 change due to the difference in the running distance of the runners that supply the resin to the cavities, the semiconductor chip 1 is pushed up in some cavities, and the curved apex of the bonding wire 3 is the cavity. There is a case where it contacts the top wall surface, that is, the electrode layer 16. The electrical connection between the electrode layer 16 and the frame assembly 9 generated by this contact is detected individually for each cavity, so that the number of the cavity, the serial number of the set frame assembly, and the individual unit. The numbers and are respectively recognized and recorded.

(Embodiment 3) This embodiment is substantially the same as that of Embodiment 1 except that the structure of the mold is different. Therefore, here, the configuration of the mold in the present embodiment will be mainly described in detail. FIG. 6 is a cross-sectional view showing one aspect of the mold setting process in the third embodiment. The mold used in this embodiment is divided into three, as indicated by split molds 11a, 11b, and 11c. These split molds 11a, 11
b and 11c have an integrated structure in which a plurality of units each having a cavity 12 are arranged, and among them, the split molds 11a and 11b are set by sandwiching the multiple frame assembly 9 on their mating surfaces. It is like this. Only the upper half side wall of each cavity 12 is formed in the split mold 11a, and the top of the cavity is open.

The split mold 11c is mounted on the split mold 11a so as to collectively cover the tops of the cavities 12 ... In this split mold 11c, electrode layers 16 ... Which are electrically isolated from the split mold 11c by an insulating layer 13 are formed at positions that are to be the tops of the cavities 12. Each of the electrode layers 16 forms a part of the top wall surface of the cavity 12, that is, is flush with the lower surface of the split mold 11c, and as shown in FIG. It is formed in a □ shape only in the portion immediately adjacent to the curved apex. Wirings are individually drawn out from the respective electrode layers 16, and the wirings are connected to the frame 5 of the frame assembly 9 via a detection recording device including the continuity detector 21 and a power source, although details thereof are omitted. There is. The detection recording apparatus including the continuity detector 21 sequentially scans the electrode layers 16 to monitor the presence or absence of continuity during the sealing operation. When the frame assembly 9 is set between the split molds 11a and 11b, the electrode layers 16 ... Are electrically isolated from the frame 5 by the insulating layer 13.

When the frame assembly 9 is set in the mold of this embodiment in the mold setting step and the mold is closed, and the resin is injected into the series of cavities 12 in the sealing step, the resin injected into each cavity 12 Depending on the cavity, the semiconductor chip 1 may be pushed up due to changes in the injection pressure and the flow rate, and the curved vertex of the bonding wire 3 may come into contact with the top wall surface of the cavity. At this time, the bonding wire 3 comes into contact with the surface of the cavity immediately adjacent to the curved vertex, that is, the electrode layer 16 provided at that position. The conduction between the electrode layer 16 and the frame assembly 9 generated by this contact is individually detected for each cavity, and the number of the cavity 12, the serial number of the set frame assembly, and the number of the individual unit are detected. Each is recognized and recorded.

By using the mold of this embodiment, the purpose of detection can be achieved with an extremely small electrode area. This minimizes obstacles that may be caused by a part of the inner wall of the cavity being formed of a material other than the mold metal, which may be caused by the mismatch of the expansion coefficient and the heat transfer coefficient.

(Embodiment 4) This embodiment relates to a method of detecting an obstacle in which a curved vertex of a bonding wire abnormally approaches the surface of a package. This embodiment is substantially the same as that of the first embodiment except that the configuration of the frame assembly to be inspected is different. Therefore, here, the configuration of the frame assembly in the present embodiment will be mainly described in detail.

FIG. 8 is a sectional view showing an aspect of the mold setting step in the fourth embodiment. In the figure, the structure of the frame assembly 9 is shown as a unit. In FIG. 8, the semiconductor chip 1 mounted on the stage 6 of the frame assembly 9 includes the detection pad 1m in addition to the general circuit pad 1a.
In addition to the general circuit lead 2, the detection lead 2m is connected to the frame 5 of the frame assembly 9, and the detection pad 1m and the inner end of the detection lead 2m are connected with the detection bonding wire 3m. Connected by. The detection pad 1m does not have to be connected to the circuit in the semiconductor chip 1, but when it is connected, it is preferably connected to the ground wiring of the circuit. Further, the lead for ground wiring may be shared without separately providing the lead for detection 2m.

The detection bonding wire 3m is a general circuit bonding wire 3 connected to the semiconductor chip 1.
Like the above, it is formed in an arc shape having a curved vertex, but the height Hm from the surface of the semiconductor chip 1 to the curved vertex is set higher than the height Ho of the curved vertex in the general circuit bonding wire 3. And the difference in height (H
m-Ho) is the minimum allowable limit value δ of the margin between the curved apex of the general circuit bonding wire 3 and the package surface of the manufactured semiconductor element.
In the present embodiment, the height Ho of the bonding wire for circuit is 175 μm and the minimum allowable limit value δ is 100 μm. Therefore, the height Hm of the bonding wire for detection 3 m is Hm.
Is set to 275 μm.

As the mold used in this embodiment, any of the molds described in Embodiments 1 to 3 can be used. Here, it is assumed that the mold of Embodiment 1 is used. In the mold setting step, the frame assembly 9 of the present embodiment is set on the mating surfaces of the split molds 11a and 11b in which the array of cavities 12 is formed, and the mold is closed. At this stage, since there is a gap between the curved apex of the detection bonding wire 3m and the electrode layer 16, no electrical connection is recognized between the electrode layer 16 and the frame 5.

In the sealing step, resin is injected into each cavity 12 of the mold. At this time, when the semiconductor chip 1 is pushed up by the flow pressure of the resin or the like, as shown in FIG. 9, the detection bonding wire 3m having a higher curved vertex than the others first contacts the electrode layer 16. Since this contact brings the electrode layer 16 and the frame 5 into conduction, the detector 21 detects this, issues an alarm, and identifies the conduction data by the recording device 22.
Send to. The identification recording device 22 records the identification number of the cavity for which conduction is detected, the serial number of the set frame assembly and the individual number of the unit, and checks the operating conditions of the corresponding cavity toward the sealing process. Alternatively, a signal for controlling is transmitted, and a signal for excluding the corresponding semiconductor element individual from the manufacturing line as a defective product or a re-inspection product is transmitted toward the sorting step.

The semiconductor element excluded by this signal is
The curved apex of the circuit bonding wire 3 is less than or equal to the minimum allowable limit value δ, that is, the margin with the package surface is 10
It is less than 0 μm. According to the detection method of the present embodiment, even if the bonding wire is not exposed from the package in appearance, the package film is peeled off after shipment and the bonding wire is exposed, or moisture enters from a thin package film. It is possible to exclude a semiconductor element having low reliability that deteriorates the characteristics from the production line.

Further, in the present invention, the bonding wire for detection may be a plurality of bonding wires having different positions, which makes it possible to determine which part of the four sides of the chip is defective. Further, a plurality of bonding wires having different heights may be used, whereby the degree of failure can be judged and the wires having such a light weight can be sorted.

[0045]

According to the method for inspecting a semiconductor device of the present invention, an electrode electrically insulated from a lead is formed on the surface of a cavity of a mold, and when conduction is detected between the electrode and the lead,
Since it is determined that the bonding wire is exposed or abnormally approaches the surface of the package, the package sealing defect that cannot be detected by a normal inspection can be detected in the manufacturing line.

[Brief description of drawings]

FIG. 1 is a process drawing showing an example of a manufacturing line to which a semiconductor element inspection method of the present invention is applied.

FIG. 2 is a cross-sectional view showing one aspect of a mold setting process in the first embodiment.

FIG. 3 is a plan view showing one unit of the multiple-assembly frame assembly 9 to be inspected.

FIG. 4 is a cross-sectional view showing one aspect of the sealing step in the first embodiment.

FIG. 5 is a schematic view showing an example of a curved form of a bonding wire.

FIG. 6 is a process diagram showing a modified example of the first embodiment.

FIG. 7 is a cross-sectional view showing one aspect of a mold setting step in the second embodiment.

FIG. 8 is a cross-sectional view showing one aspect of a mold setting process according to the third embodiment.

FIG. 9 is a perspective view showing an aspect of an electrode used in the embodiment.

FIG. 10 is a cross-sectional view showing one aspect of a mold setting process according to the fourth embodiment.

FIG. 11 is a cross-sectional view showing one aspect of the sealing step in the embodiment.

FIG. 12 is a cross-sectional view showing a sealing step when manufacturing a semiconductor element according to a conventional manufacturing method.

FIG. 13 is a cross-sectional view showing an aspect of the conventional sealing step.

[Explanation of symbols]

1 ... Semiconductor chip, 2 ... Lead, 2a ... Inner terminal, 2b
Outer terminal, 2 m ... Detection lead, 3 ... Bonding wire, 3 m ... Detection bonding wire, 5 ... Frame, 6 ... Stage, 7 ... Stage bar, 8 ... Lead stay, 9 ... Frame assembly, 10 ... Mold, 11 ... Mold body, 1
1a, 11b, 11c ... Split mold, 12 ... Cavity, 1
3 ... Insulating layer, 14 ... Runner, 15 ... Gate, 16 ... Electrode layer, 20 ... Detection recording device, 21 ... Continuity detector, 22 ...
Identification recording device.

Claims (5)

[Claims] 1. A semiconductor chip and an inner end of a lead are connected by a bonding wire, and the semiconductor chip, the bonding wire, and an inner end of the lead are made of resin with the outer end of the lead exposed to the outside. A method for detecting a semiconductor device in which a part of the bonding wire is exposed on the surface of the package when manufacturing a semiconductor device encapsulated in a package, which is a mold for filling the resin to form the package. An electrode electrically insulated from the lead is formed on the surface of the cavity, and when conduction is detected between the electrode and the lead, the semiconductor element manufactured in the cavity is bonded to the surface of the package. A method of inspecting a semiconductor device, characterized by recognizing that a wire is exposed. 2. The semiconductor chip and the inner end of the lead are connected by a bonding wire, and the semiconductor chip, the bonding wire and the inner end of the lead are made of resin with the outer end of the lead exposed to the outside. A method of detecting a semiconductor element in which the apex of the bonding wire abnormally approaches the surface of the package beyond an allowable limit when manufacturing a semiconductor element encapsulated in a package, wherein the semiconductor chip is: Fix one end of the detection bonding wire that has a vertex higher than the tops of other bonding wires, connect the other end of this detection bonding wire to the lead for detection, and fill it with resin. An electrode electrically isolated from the detection lead is formed on the cavity surface of the mold forming the package, When conduction is detected between the electrode and the detection lead, the semiconductor element manufactured in the cavity determines that the apex of the other bonding wire abnormally approaches the surface of the package beyond the allowable limit. A method for inspecting a semiconductor device, comprising: 3. A semiconductor device manufacturing apparatus to which the method for inspecting a semiconductor device according to claim 1 or 2 is applied, wherein the mold is a split mold and at least one cavity surface of the split mold is formed. An apparatus for manufacturing a semiconductor element, wherein the electrode is formed, and an insulating layer is formed between the electrode and the mating surface of the split mold. 4. The semiconductor device manufacturing apparatus according to claim 3, wherein the electrode is formed on the surface of the cavity immediately adjacent to the apex of the bonding wire or the detection bonding wire. 5. A semiconductor element manufacturing apparatus to which the semiconductor element inspection method according to claim 1 or 2 is applied, wherein the semiconductor element manufactured in the cavity when conduction is detected in the electrodes. A semiconductor device manufacturing apparatus characterized by having means for distinguishing from other semiconductor elements and storing the identification information so that the identification information can be output.