JP2003297748A5 - - Google Patents
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- Publication number
- JP2003297748A5 JP2003297748A5 JP2002101836A JP2002101836A JP2003297748A5 JP 2003297748 A5 JP2003297748 A5 JP 2003297748A5 JP 2002101836 A JP2002101836 A JP 2002101836A JP 2002101836 A JP2002101836 A JP 2002101836A JP 2003297748 A5 JP2003297748 A5 JP 2003297748A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating substrate
- protective film
- manufacturing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010408 film Substances 0.000 claims 35
- 239000004065 semiconductor Substances 0.000 claims 22
- 230000001681 protective effect Effects 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 12
- 229920005989 resin Polymers 0.000 claims 8
- 239000011347 resin Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 5
- 238000002425 crystallisation Methods 0.000 claims 3
- 230000008025 crystallization Effects 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229920001187 thermosetting polymer Polymers 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
Claims (11)
前記絶縁基板にエッチングの保護膜を形成する保護膜形成工程と、
前記保護膜に複数の突起が配列されたスタンパを当接して、前記保護膜に前記突起の形状を転写する穴開け工程と、
前記保護膜をマスクとして前記絶縁基板をエッチングし、該絶縁基板に複数の穴を形成するエッチング工程と、
前記絶縁基板に半導体膜を形成する半導体膜形成工程と、
前記絶縁基板の複数の穴の中の半導体膜に非溶融部分が残り、他の部分が溶融するように熱処理を行う結晶化工程と、
を含む半導体装置の製造方法。A method of manufacturing a semiconductor device in which a semiconductor film is formed on an insulating substrate and a thin film element is formed on the semiconductor film,
A protective film forming step of forming an etching protective film on the insulating substrate;
A step of making a contact with a stamper in which a plurality of protrusions are arranged on the protective film, and transferring a shape of the protrusion to the protective film; and
Etching the insulating substrate using the protective film as a mask and forming a plurality of holes in the insulating substrate; and
A semiconductor film forming step of forming a semiconductor film on the insulating substrate;
A crystallization step of performing a heat treatment so that a non-molten portion remains in the semiconductor film in the plurality of holes of the insulating substrate and the other portion is melted;
A method of manufacturing a semiconductor device including:
前記絶縁基板にエッチングの第１の保護膜を形成する第１の保護膜形成工程と、
前記第１の保護膜の上にエッチングの第２の保護膜を形成する第２の保護膜形成工程と、
前記第２の保護膜に複数の突起が配列されたスタンパを当接して、前記第２の保護膜に前記突起の形状を転写する穴開け工程と、
前記第１及び第２の保護膜をマスクとして前記絶縁基板をエッチングし、該絶縁基板に複数の穴を形成するエッチング工程と、
前記絶縁基板に半導体膜を形成する半導体膜形成工程と、
前記絶縁基板の複数の穴の中の半導体膜に非溶融部分が残り、他の部分が溶融するように熱処理を行う結晶化工程と、
を含む半導体装置の製造方法。A method of manufacturing a semiconductor device in which a semiconductor film is formed on an insulating substrate and a thin film element is formed on the semiconductor film,
A first protective film forming step of forming an etching first protective film on the insulating substrate;
A second protective film forming step of forming an etching second protective film on the first protective film;
A step of abutting a stamper having a plurality of protrusions arranged on the second protective film, and transferring a shape of the protrusion to the second protective film;
Etching the insulating substrate using the first and second protective films as a mask, and forming a plurality of holes in the insulating substrate;
A semiconductor film forming step of forming a semiconductor film on the insulating substrate;
A crystallization step of performing a heat treatment so that a non-molten portion remains in the semiconductor film in the plurality of holes of the insulating substrate and the other portion is melted;
A method of manufacturing a semiconductor device including:
前記穴開け工程は、前記樹脂膜に前記スタンパを押し付けて前記複数の突起の形状を前記樹脂膜に転写する工程である、請求項１又は２に記載の半導体装置の製造方法。The protective film forming step or the second protective film forming step is a step of forming a resin film by applying a resin to the insulating substrate and curing it.
3. The method of manufacturing a semiconductor device according to claim 1, wherein the punching step is a step of pressing the stamper against the resin film to transfer the shapes of the plurality of protrusions to the resin film.
前記穴開け工程は、前記スタンパと前記絶縁基板とによって挟持される前記光硬化性樹脂又は熱硬化性樹脂の膜に光又は熱を加えて硬化させる工程である、請求項１又は２に記載の半導体装置の製造方法。The protective film forming step or the second protective film forming step is a step of applying a photocurable resin or a thermosetting resin to the insulating substrate,
The said perforating process is a process of applying light or heat to the film of the photocurable resin or thermosetting resin sandwiched between the stamper and the insulating substrate and curing the film. A method for manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002101836A JP2003297748A (en) | 2002-04-03 | 2002-04-03 | Method for manufacturing semiconductor device and electro-optical equipment and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002101836A JP2003297748A (en) | 2002-04-03 | 2002-04-03 | Method for manufacturing semiconductor device and electro-optical equipment and electronic apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003297748A JP2003297748A (en) | 2003-10-17 |
| JP2003297748A5 true JP2003297748A5 (en) | 2005-09-15 |
Family
ID=29388787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002101836A Withdrawn JP2003297748A (en) | 2002-04-03 | 2002-04-03 | Method for manufacturing semiconductor device and electro-optical equipment and electronic apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003297748A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005209786A (en) * | 2004-01-21 | 2005-08-04 | Seiko Epson Corp | Semiconductor device and its manufacturing method |
| KR100777963B1 (en) | 2006-06-21 | 2007-11-21 | 삼성전기주식회사 | Stamp with taper pattern and method of manufacturing polymeric stamp using the same |
| JP5287015B2 (en) * | 2008-08-06 | 2013-09-11 | 富士ゼロックス株式会社 | Patterning method, organic electric element, organic electroluminescent element, and organic semiconductor transistor |
| KR101184022B1 (en) | 2010-06-29 | 2012-09-18 | 한국산업기술대학교산학협력단 | Reactive Ion Etching apparatus and Texturing method for solarcell using same |
-
2002
- 2002-04-03 JP JP2002101836A patent/JP2003297748A/en not_active Withdrawn
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