JP2003285444A - Substrate, ink jet recording head and ink jet printer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To produce an ink jet recording head easily and surely with high accuracy. <P>SOLUTION: At the main section of an ink jet recording head H shown in Fig. 4, a nozzle plate 100 is bonded to the lower side of an ink chamber substrate 200 forming a plurality of ink chambers 210 and a diaphragm 300 is provided on the upper side thereof in contact therewith. On the side of the diaphragm 300 opposite to the ink chamber substrate 200, a piezoelectric element 400 is provided at the position corresponding to each ink chamber 210 through an underlying layer 700. The piezoelectric element 400 is arranged such that a piezoelectric layer 430 is sandwiched between an upper electrode 410 and a lower electrode 420. A head H is produced using a substrate where a stopper layer is held between an Si single crystal substrate and an Si single crystal layer, wherein the Si single crystal substrate serves as the ink chamber substrate 200 and the Si single crystal layer serves as the diaphragm 300 in conjunction with the stopper layer. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate, an ink jet recording head and an ink jet printer.

[0002]

2. Description of the Related Art Generally, an ink jet recording head mainly comprises an ink chamber substrate forming a plurality of ink chambers (cavities) capable of storing ink, and a nozzle plate joined to one surface of the ink chamber substrate. , And a plurality of piezoelectric elements (vibration sources) provided via a vibration plate joined to the other surface.

Such an ink jet recording head is manufactured through the following steps <1> to <4>.

<1> First, a Si substrate is prepared as a base material to be an ink chamber substrate, and a vibration plate is laminated or bonded on the Si substrate.

<2> Next, a plurality of piezoelectric elements are formed on this diaphragm.

<3> Next, by etching the Si substrate, an ink chamber substrate is obtained.

<4> Next, a nozzle plate having nozzle holes for ejecting ink is bonded to the side of the ink chamber substrate opposite to the vibrating plate.

However, in this manufacturing method, when the Si substrate is etched to form the ink chamber substrate, erosion proceeds excessively (more than necessary), and the vibration plate, and further the piezoelectric element. In some cases, there is the inconvenience that the ink is eroded up to the maximum and the size of each ink chamber varies.

In order to prevent such inconvenience, it is necessary to control the etching conditions such as the etching time, but it is extremely difficult to perform such control strictly.

[0010]

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate on which an ink jet recording head can be manufactured easily, reliably and accurately, an ink jet recording head provided with such a substrate, and further such an ink jet recording head. It is to provide an inkjet printer including the.

[0011]

The above objects are achieved by the present invention described in (1) to (20) below.

(1) A substrate used for manufacturing an ink jet recording head, in which a predetermined pattern including a concave portion which becomes an ink chamber for storing ink is formed by etching, and a Si single crystal substrate, and at the time of the etching. And a stopper layer having a function of preventing the progress of erosion, and a Si single crystal layer provided on the side opposite to the Si single crystal substrate via the stopper layer.

(2) The substrate according to (1), wherein the stopper layer is made of an amorphous substance.

(3) The substance in the amorphous state is
The substrate according to (2) above, which is an oxide.

(4) The substrate according to (3) above, wherein the oxide is SiO ₂ .

(5) The substance in the amorphous state is
The substrate according to (2) above, which is a nitride.

(6) The stopper layer has an average thickness of 100 nm to 50 μm (1) to (5).
The substrate according to any one of 1.

(7) The substrate according to any one of (1) to (6) above, wherein the etching is anisotropic etching.

(8) The Si single crystal substrate and the Si single crystal layer have different orientations from each other.
A substrate according to any one of (1) to (7).

(9) The Si single crystal substrate is (11)
The substrate according to any one of (1) to (8) above, which is 0) oriented.

(10) The Si single crystal layer is (10
The above (1) having a 0) orientation or a (111) orientation
A substrate according to any one of (1) to (9).

(11) An ink jet recording head manufactured by using the substrate according to any one of (1) to (10) above.

(12) The Si single crystal substrate is an ink chamber substrate that forms a plurality of ink chambers.
The ink jet recording head according to 1).

(13) The ink jet recording head according to the above (12), wherein a vibration source is provided on the opposite side of the Si single crystal layer from the stopper layer so as to correspond to the plurality of ink chambers. .

(14) The ink jet recording head according to the above (13), wherein an underlayer having a function of improving the bonding property between the vibration source and the Si single crystal layer is provided.

(15) The ink jet recording head according to the above (13) or (14), wherein the stopper layer constitutes at least a part of a diaphragm vibrated by the vibration of the vibration source.

(16) The ink jet recording head according to any one of the above (13) to (15), wherein the stopper layer, together with the Si single crystal layer, constitutes a diaphragm vibrating by the vibration of the vibration source.

(17) The volume of the ink chamber changes due to the vibration of the vibrating plate, and the volume change causes the ink to be ejected.
The inkjet recording head according to 6).

(18) Nozzle holes capable of ejecting ink respectively corresponding to the plurality of ink chambers are provided on the side of the ink chamber substrate opposite to the vibrating plate. An ink jet recording head according to any one of 1) to 3) above.

(19) The ink jet recording head according to the above (18), wherein the plurality of nozzle holes are formed in a nozzle plate provided on a side of the ink chamber substrate opposite to the vibrating plate.

(20) An ink jet printer comprising the ink jet recording head according to any one of (11) to (19).

[0032]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the substrate, ink jet recording head and ink jet printer of the present invention will be described below.

<Substrate> First, the substrate of the present invention will be described.

FIG. 1 is a cross-sectional view showing an embodiment of a substrate of the present invention, and FIGS. 2 and 3 are views (cross-sectional views) for explaining a manufacturing process of the substrate shown in FIG. .

The substrate 10 of the present invention is used for manufacturing an ink jet recording head H (hereinafter, simply referred to as "head H") which will be described later.

The substrate 10 shown in FIG. 1 is a Si single crystal substrate 2
0, a stopper layer 30 formed (provided) on the Si single crystal substrate 20, and S via the stopper layer 30.
Si single crystal layer 6 provided on the opposite side of i single crystal substrate 20
It has 0 and. In other words, the substrate 10 is Si
The stopper layer 3 is formed by the single crystal substrate 20 and the Si single crystal layer 60.
It is configured to sandwich 0.

As will be described later, the Si single crystal substrate 20 is provided with a recess 210 ′ serving as the ink chamber 210, and a recess serving as the reservoir chamber 230 and the supply port 240, respectively, by etching. That is, by etching the Si single crystal substrate 20, the ink chamber substrate 200 of the head H is obtained.

This Si single crystal substrate 20, that is, Si
Since a substrate composed of a single crystal is a general-purpose substrate,
By constructing the substrate 10 using this Si single crystal substrate 20, the manufacturing cost of the substrate 10 and, by extension, the head H can be reduced.

The average thickness of the Si single crystal substrate 20 is not particularly limited, but is preferably about 10 μm to 1 mm, more preferably about 30 to 300 μm. S
By setting the average thickness of the i single crystal substrate 20 within the above range, the obtained head H has sufficient strength while
The miniaturization (particularly thinness) can be achieved.

The stopper layer 3 is formed on the Si single crystal substrate 20.
0 is formed (provided). This stopper layer 30
Has a function of preventing the progress of erosion when a predetermined pattern shape including the recess 210 ′ is formed on the Si single crystal substrate 20 by etching. By providing this stopper layer 30, erosion due to etching proceeds excessively (more than necessary), and each portion provided on the opposite side of the stopper layer 30 from the Si single crystal substrate 20 (particularly, the piezoelectric element 400 as a vibration source described later). Can be prevented from being eroded. As a result, it is possible to prevent the function (performance) of the head H from being deteriorated or lost.

As will be described later, this stopper layer 3
0, together with the Si single crystal layer 60, functions as a diaphragm 300 that vibrates due to the vibration of the piezoelectric element 400. For this reason, the stopper layer 30 is required to have sufficient strength (physical properties) as a vibration plate in addition to the function of preventing the progress of erosion due to etching.

From this point of view, the stopper layer 30 is preferably made of an amorphous substance.
Such a stopper layer 30 can sufficiently exhibit the function of preventing the progress of erosion due to etching, and can secure sufficient strength required for the diaphragm.

As this amorphous substance,
Although not limited to, for example, SiO _Two, Si_TwoO_Three, A
l_TwoO_Three, ZrO_Two, TiO_Two, Y_TwoO_ThreeVarious like
Oxides, various nitrides such as TiN, BN, AlN,
Seed resin materials and various glass materials are listed.
Can be used alone or in combination of two or more.
Wear.

Among these, oxides or nitrides are preferable as the substance in the amorphous state, and SiO ₂ which is an oxide is most preferable. By forming the stopper layer 30 using an oxide (particularly, SiO ₂ ) or a nitride, the above effect becomes particularly remarkable.

The average thickness of the stopper layer 30 is
Although not particularly limited, it is preferably about 100 nm to 50 μm, more preferably about 500 nm to 2 μm. By setting the average thickness of the stopper layer 30 in the above range, it is possible to prevent the obtained head H from increasing in size and to secure sufficient strength required for the diaphragm, while the stopper layer 30 is secured. In the above range, the stopper layer 30 can sufficiently exhibit the function of preventing the progress of erosion due to etching.

A Si single crystal layer 60 is formed on the stopper layer 30.
Are joined (provided). Such a Si single crystal layer 60, that is, a layer (substrate) composed of Si single crystal
Is general-purpose, the substrate 10 and the head H can be manufactured at low cost by configuring the substrate 10 using the Si single crystal layer 60.

Further, each portion (each layer) is formed on the Si single crystal layer 60.
When each film is formed, each layer grows (affected by) the orientation direction of the Si single crystal layer 60, that is,
Since it grows epitaxially, its orientation is aligned.

In the head H described later, the Si single crystal layer 60
At least a base layer 700, a conductive oxide layer 420 ′ that will be a lower electrode 420 of the piezoelectric element 400, and a ferroelectric material layer 430 ′ that will be a piezoelectric layer 430 will be sequentially formed thereon. Therefore, the base layer 700, the conductive oxide layer 420 ′ (lower electrode 420), and the ferroelectric material layer 430 ′ (piezoelectric layer 430) are aligned in their respective orientations. As described above, in the piezoelectric element 400 having the piezoelectric layer 430 with the aligned orientation, various characteristics such as electric field distortion characteristics are improved. As a result, the performance of the head H is improved.

The average thickness of such Si single crystal layer 60 is preferably about 10 nm to 50 μm, and 20
More preferably, it is about nm to 2 μm. By setting the average thickness of the Si single crystal layer 60 within the above range, the Si single crystal layer 60 is prevented from increasing in size of the obtained head H.
Can suitably exhibit the above effects.

The Si single crystal layer 60 constitutes the diaphragm 300 together with the stopper layer 30. By reducing the average thickness of the Si single crystal layer 60 in this way, the strength of the diaphragm 300 is increased. However, it can be prevented from becoming larger than necessary.

Now, the substrate 10 having such a structure is made of Si.
Although the orientation directions of the single crystal substrate 20 and the Si single crystal layer 60 may be different from each other or may be the same, the Si single crystal substrate 20 and the Si single crystal layer 60 are It is preferable that the orientation directions are different from each other.

Specifically, the following is preferable. That is, as described above, the piezoelectric layer 430 is
Dependent on (or affected by) the orientation of the i single crystal layer 60
As it grows, the orientation direction of the Si single crystal layer 60 is selected so that the orientation direction of the piezoelectric layer 430 can improve various characteristics of the piezoelectric element 400. On the other hand, the orientation of the Si single crystal substrate 20 is selected so that it is suitable for etching and the erosion due to etching proceeds in a direction substantially perpendicular to the plane direction. The substrate 10 having such a configuration is an extremely useful substrate for manufacturing the head H.

From this point of view, the Si single crystal layer 60 preferably has a (100) orientation or a (111) orientation. By using such a (100) -oriented or (111) -oriented Si single crystal layer, the piezoelectric layer 430
Is, for example, tetragonal (001) orientation, tetragonal (111)
It can be formed by epitaxial growth with orientation, rhombohedral (001) orientation, rhombohedral (111) orientation, or the like. The piezoelectric element 400 including the piezoelectric layer 430 is
Various characteristics such as electric field distortion characteristics become particularly excellent.

On the other hand, as the Si single crystal substrate 20, (1
10) Orientation is preferable. Such a (110) -oriented Si single crystal substrate is more easily anisotropically etched, and the erosion due to etching progresses in a direction substantially perpendicular to the plane direction with high accuracy, so that dimensional accuracy is improved. The high ink chamber substrate 200 can be obtained.

Next, a method of manufacturing such a substrate 10 will be described with reference to FIGS.

The substrate 10 described above can be manufactured, for example, as follows. <I> First, the Si single crystal substrate 20 and the Si single crystal layer 60.
A case where the substrate 10 having different orientations from and is manufactured will be described (see FIG. 2).

<I-1> It becomes the Si single crystal substrate 20,
For example, a Si single crystal plate 20a with a (110) orientation and a Si single crystal plate 60a with a (100) orientation, which will become the Si single crystal layer 60, are prepared.

<I-2> Next, the stopper layer 30 made of SiO ₂ is formed on the Si single crystal plate 20a. This can be easily performed by heat-treating the surface of the Si single crystal plate 20a on which the stopper layer 30 is formed, for example, in an oxidizing atmosphere such as air or oxygen gas.

Although the heat treatment conditions are not particularly limited,
It is preferable that the temperature is 900 to 1400 ° C. × 20 minutes to 2 hours. By appropriately setting the heat treatment conditions, the stopper layer 30 having the average thickness as described above is formed.

The stopper layer 30 is made of, for example, SiO ₂
When the stopper layer 30 is made of various oxides and nitrides other than the above, the stopper layer 30 is formed by, for example, thermal CVD or plasma C.
It can be formed by chemical vapor deposition (CVD) such as VD and laser CVD, physical vapor deposition (PVD) such as vacuum deposition, sputtering, ion plating, and sputter flow.

When the stopper layer 30 is made of, for example, various resin materials or various glass materials, the sheet-shaped stopper layer 30 is formed on the Si single crystal plate 20a by various bonding methods, various fusion bonding methods, or the like. It should be joined to.

<I-3> Next, the Si single crystal plate 20a on which the stopper layer 30 is formed and the Si single crystal plate 60a are bonded (bonded) to each other to integrate them.

For this joining, for example, a method of heat-treating with the Si single crystal plate 60a pressed onto the stopper layer 30 is preferably used. According to this method, the Si single crystal plate 20 provided with the stopper layer 30 can be easily and reliably provided.
It is possible to integrate a and the Si single crystal plate 60a.

This heat treatment condition is appropriately set depending on the constituent material of the stopper layer 30 and the like, and is not particularly limited.
The temperature is preferably 0 to 1400 ° C. for about 20 minutes to 2 hours. Note that other various bonding methods, various fusion bonding methods, and the like may be used for joining.

<I-4> Next, with respect to the Si single crystal plate 20a and the Si single crystal plate 60a, for example,
By performing post-processing such as grinding, polishing, etching,
By adjusting their shapes (thicknesses), the Si single crystal substrate 20 and the Si single crystal layer 60 are obtained. At this time, the average thicknesses of the Si single crystal substrate 20 and the Si single crystal layer 60 are set in the ranges as described above. In addition, this step <I-4>
Can be omitted if desired.

<II> Next, the Si single crystal substrate 20 and Si
A case will be described in which the substrate 10 having the same orientation as the single crystal layer 60 and having the stopper layer 30 made of SiO ₂ is manufactured (see FIG. 3).

<II-1> First, for example, a (110) -oriented Si single crystal plate 10b to be the substrate 10 is prepared.

<II-2> Next, this Si single crystal plate 10
After implanting oxygen ions into b, heat treatment is performed. This
As a result, in the middle of the thickness direction of the Si single crystal plate 10b
iO _TwoA layer (stopper layer) 30 is formed. This stock
Due to the generation of the layer 30, the Si single crystal plate 10b is
For the Si single crystal plate 60b and the lower Si single crystal plate 20b,
It is divided (separated).

The oxygen injection amount is not particularly limited,
^{1 × 10 16 ~1 × 10 20} cm - it is preferable to be ² mm, and more preferably, ^{1 × 10 17 ~1 × 10 19} cm -2 order.

The acceleration voltage for oxygen ions is not particularly limited, but is preferably about 10 to 1000 keV, and more preferably about 100 to 500 keV.

By properly setting each of these conditions, the thickness of the stopper layer 30 can be adjusted.

The heat treatment conditions are not particularly limited, but it is preferable that the temperature is 900 ° C. or higher for about 20 minutes to 2 hours.

<II-3> Next, if necessary, the substrate 10b is subjected to a high temperature oxidation treatment. This allows S
The vicinity of the interface between the i single crystal plate 60b and the stopper layer 30 is thermally oxidized, and the thickness of the stopper layer 30 increases. At this time, the thermal oxide film 9 is also formed near the surface of the Si single crystal plate 60b.
0 is formed. The thermal oxide film 90 is formed in the next step <
It can be removed by performing II-4>.

<II-4> Next, if necessary, the same step as the step <I-4> is performed. Thereby, the Si single crystal substrate 20 and the Si single crystal layer 60 are obtained. The substrate 10 is manufactured through the above steps.

<Inkjet Recording Head> Next, the inkjet recording head of the present invention will be described.

FIG. 4 is an exploded perspective view (partially cut away) showing an embodiment of the ink jet recording head of the present invention, and FIG. 5 is a constitution of a main part of the ink jet recording head shown in FIG. 6 and 7 are sectional views for explaining the manufacturing process of the main part of the ink jet recording head shown in FIG. 5, respectively.
Is. It should be noted that FIG. 4 is shown upside down from the normally used state.

Inkjet recording head H shown in FIG.
The (head H) mainly includes the nozzle plate 100, the ink chamber substrate 200, the vibration plate 300, and the piezoelectric element (vibration source) 40.
0, and these are housed in the base body 500. The head H is manufactured using the substrate 10 described above. The Si single crystal substrate 20 of the substrate 10 is used as the ink chamber substrate 200, and the stopper layer 30 and the Si single crystal layer 6 are used.
0 is the diaphragm 300.

The head H constitutes an on-demand type piezo jet head.

The nozzle plate 100 is composed of, for example, a stainless steel rolling plate or the like. This nozzle plate 100
A large number of nozzle holes 110 for ejecting ink droplets.
Are formed. The pitch of these nozzle holes 110 is appropriately set according to the printing accuracy.

The ink chamber substrate 200 is attached to the nozzle plate 100.
Is fixed (fixed). The ink chamber substrate 200 includes a nozzle plate 100, a side wall (partition wall) 220, and a vibrating plate 300, which will be described later.
A pressure chamber) 210, a reservoir chamber 230 that temporarily stores the ink supplied from the ink cartridge 31, and a supply port 240 that supplies ink from the reservoir chamber 230 to each ink chamber 210 are defined. .

Each of the ink chambers 210 is formed in a strip shape (a rectangular parallelepiped shape) and is arranged corresponding to each nozzle hole 110. The volume of each ink chamber 210 changes due to the vibration of the vibration plate 300, which will be described later, and the volume change causes the ink to be ejected.

The volume of the ink chamber 210 is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 2 × 10 ⁻⁵ mL, and about 5 × 10 ⁻⁷ to 1 × 10 ⁻⁵ mL. More preferably.

On the other hand, the nozzle plate 10 of the ink chamber substrate 200
The vibration plate 300 is provided on the side opposite to 0 in contact with the side wall 220 of the ink chamber substrate 200, and the plurality of piezoelectric elements 40 are provided on the side opposite to the ink chamber substrate 200 of the vibration plate 300.
0 is provided via the base layer 700.

A communication hole 310 is formed at a predetermined position of the vibration plate 300 so as to penetrate therethrough in the thickness direction. Ink can be supplied from the ink cartridge 31 to the reservoir chamber 230 through the communication hole 310.

In this embodiment, the vibrating plate 300 includes the stopper layer 30 made of an amorphous material on the ink chamber substrate 200 side and the Si single crystal layer 60 made of Si single crystal on the piezoelectric element 400 side. It consists of and.

The amorphous substances forming the stopper layer 30 are as described above, and these amorphous substances are also insulating materials or semiconductor materials. Therefore, using these materials, the stopper layer 30
In the head H, the insulation isolation between the respective parts (piezoelectric elements 400) provided on the Si single crystal layer 60 can be made good, and various types of electrolytic strain characteristics of the piezoelectric element 400, etc. There is also an effect that the characteristics can be improved. The performance of such a head H is improved.

Of these, SiO ₂ is most suitable as the amorphous substance. By forming the stopper layer 30 using SiO ₂ , the above effect becomes particularly remarkable.

Each piezoelectric element 400 is arranged corresponding to substantially the center of each ink chamber 210. Each piezoelectric element 400 is electrically connected to a piezoelectric element drive circuit described later, and is configured to operate based on a signal from the piezoelectric element drive circuit.

The size of each piezoelectric element 400 in plan view is not particularly limited, but is, for example, 1 to 3 mm × 10.
It can be about 50 μm.

The base 500 is made of, for example, various resin materials, various metal materials, and the like, and the ink chamber substrate 200 is fixed and supported on the base 500.

Hereinafter, the underlayer 700 and the piezoelectric element 400 will be described.
The configuration will be described in more detail with reference to FIG.

The piezoelectric element 400 shown in FIG.
10 and the lower electrode 420, the piezoelectric layer (ferroelectric layer) 4
It is configured to sandwich 30. In other words, the piezoelectric element 400 is configured by stacking the lower electrode 420, the piezoelectric layer 430, and the upper electrode 410 in this order.

The piezoelectric element 400 functions as a vibration source, and the diaphragm 300 is a piezoelectric element (vibration source).
It vibrates due to the vibration of 400, and has a function of instantaneously increasing the internal pressure of the ink chamber 210.

A base layer (buffer layer) 700 made of a thin film is formed (provided) on the diaphragm 300.
That is, the base layer 700 is provided between the piezoelectric element 400 (lower electrode 420) and the vibration plate 300 (Si single crystal layer 60).

The underlayer 700 has a function of improving the bondability (adhesion) between the piezoelectric element 400 (lower electrode 420) and the vibration plate 300 (Si single crystal layer 60). By providing the base layer 700, the piezoelectric element 400
It is possible to preferably prevent the head H from deteriorating with time due to peeling from the diaphragm 300, and to more reliably transfer the vibration of the piezoelectric element 400 to the diaphragm 300.

The base layer 700 is the diaphragm 300.
It suffices to provide it in at least the upper region where the piezoelectric element 400 is formed.

Examples of the constituent material of the underlayer 700 include a metal oxide having a NaCl structure, a metal oxide having a fluorite structure, and a metal oxide having a fluorite structure. One or more of these may be used. Can be used in combination. Among these, the constituent material of the underlayer 700 is preferably a material containing a metal oxide having a NaCl structure,
It is more preferable to use a metal oxide having a NaCl structure as a main material.

As will be described later, a material containing a metal oxide having a perovskite structure (particularly, a metal oxide having a perovskite structure as a main material) is preferably used as a constituent material of the lower electrode 420. But NaC
The metal oxide having the l structure has a small lattice mismatch with the metal oxide having the perovskite structure, and further has a small lattice mismatch with Si. Therefore, by forming the underlayer 700 using a metal oxide having a NaCl structure, the bondability (adhesion) between the vibration plate 300 (Si single crystal layer 60) and the lower electrode 420 is further improved.

Examples of the metal oxide having a NaCl structure include MgO, CaO, SrO, BaO and Mn.
Examples include O, FeO, CoO, NiO, and solid solutions containing these. Among these, Mg is particularly preferable.
It is preferable to use at least one of O, CaO, SrO, BaO, or a solid solution containing these. Such a metal oxide having a NaCl structure has a particularly small lattice mismatch with both the metal oxide having a perovskite structure and Si.

Such an underlayer 700 has, for example, a cubic (100) orientation, a cubic (110) orientation and a cubic (1) orientation.
11) Orientation or the like may be used, but among these, it is particularly preferable that the orientation is cubic (100) orientation or cubic (111) orientation. Underlayer 7
When 00 is cubic (100) oriented or cubic (111) oriented, the average thickness of the underlayer 700 can be made relatively small. Therefore, for example, M
N showing deliquescent like gO, CaO, SrO, BaO
Even when the underlayer 700 is made of a metal oxide having an aCl structure, it is possible to preferably prevent the inconvenience of deterioration due to moisture in the air during manufacturing and use.

From this point of view, the underlayer 700 is
It is preferable to form the film as thin as possible, specifically, the average thickness thereof is preferably 10 nm or less, and 5 nm is preferable.
The following is more preferable. Thereby, the effect is further improved.

A lower electrode 420, which is one electrode for applying a voltage to the piezoelectric layer 430, is formed (provided) on the base layer 700.

This lower electrode 420 is composed of a plurality of piezoelectric elements 4.
00 as individual electrodes. That is, the plan view shape of the lower electrode 420 is the piezoelectric layer 430.
Is formed so as to have almost the same shape as the plan view.

Examples of the constituent material of the lower electrode 420 include various conductive oxides such as metal oxides having a perovskite structure, and one kind or a combination of two or more kinds thereof can be used. Among these, as a constituent material of the lower electrode 420, a material containing a metal oxide having a perovskite structure is preferable, and a material mainly containing a metal oxide having a perovskite structure is more preferable.

Examples of the metal oxide having this perovskite structure include strontium ruthenate (S
RO), Nb-doped SrTiO ₃ , or a solid solution containing them, and the like, and these can be used alone or in combination of two or more. Since these metal oxides having a perovskite structure have excellent conductivity and chemical stability, the lower electrode 420 can also have excellent conductivity and chemical stability. As a result, the piezoelectric element 400 improves various characteristics such as electric field distortion characteristics.

Among these, strontium ruthenate (SRO) is most suitable as the metal oxide having the perovskite structure used for the lower electrode 420. SR
O is particularly excellent in conductivity and chemical stability. Therefore, by forming the lower electrode 420 by using SRO, the piezoelectric element 400 is further improved in the above effect.

Here, SRO is the general formula Sr._{n + 1}Ru
_nO_{3n + 1}(N is an integer of 1 or more). n = 1
When Sr_TwoRuO_FourAnd when n = 2, Sr_ThreeRu
_TwoO ₇And when n = ∞, SrRuO_ThreeBecomes SR
When O is used to form the lower electrode 420, SrRu is used.
O_ThreeIs the best. As a result, the conductivity of the lower electrode 420
And chemical stability are extremely superior.
Piezoelectric layer that can be formed on the lower electrode 420
The crystallinity of 430 can also be increased.

The lower electrode 420 has a portion (intermediate layer) composed of iridium or platinum in the middle of its thickness direction, that is, SRO / Pt / SR.
A laminated structure of O and SRO / Ir / SRO can also be used. In this case, the portion of the piezoelectric layer 430 side of the lower electrode 420, a material containing SrRuO ₃ (in particular, SrRuO ₃
(As a main material).

Such a lower electrode 420 is, for example, one having a pseudo cubic (001) orientation, a pseudo cubic (111) orientation, a pseudo cubic (110) orientation, a pseudo cubic (100) orientation, or the like. However, among these,
Pseudocubic (001) orientation or pseudocubic (111) orientation is preferable. Such a lower electrode 42
By configuring the piezoelectric element 400 by using 0, the above-described effect becomes more remarkable in the piezoelectric element 400.

The average thickness of the lower electrode 420 is
Although not particularly limited, it is preferably about 1 to 1000 nm, more preferably about 100 to 700 nm.

On the lower electrode 420, a piezoelectric layer 430 which is deformed by applying a voltage is formed in a predetermined shape.

As the constituent material of the piezoelectric layer 430, various kinds of ferroelectric materials can be mentioned. Particularly, a material containing a ferroelectric material having a perovskite structure is preferable, and a ferroelectric material having a perovskite structure is a main material. Is more preferable.

As the ferroelectric material having this perovskite structure, for example, Pb (Zr, Ti) O ₃ (PZ
T), (Pb, La) (Zr, Ti) O ₃ (PLZ
T), a metal oxide having a perovskite structure such as BaTiO ₃ , KNbO ₃ , PbZnO ₃ , (Sr, Bi)
(Ta, Nb) ₂ O ₉ , (Bi, La) ₄ Ti ₃ O ₁₂
Examples of the Bi-layered compound, solid solutions containing these, and the like, and one or more of these can be used in combination. By forming the piezoelectric layer 430 using these metal oxides having a perovskite structure, the piezoelectric element 400 has improved various characteristics such as electric field distortion characteristics.

Among these, lead zirconate titanate (PZT) is most suitable as the metal oxide having the perovskite structure used for the piezoelectric layer 430. By using PZT, in the piezoelectric element 400, the above effect is further improved.

When PZT is used as the ferroelectric material having the perovskite structure, the PZT may have either a tetragonal composition or a rhombohedral composition.

Such a piezoelectric layer 430 has, for example, any of tetragonal (001) orientation, tetragonal (111) orientation, rhombohedral (001) orientation, rhombohedral (111) orientation and the like. Of these, tetragonal (001) orientation, tetragonal (111) orientation, rhombohedral (001) orientation, or rhombohedral (111) orientation is particularly preferable. Thereby, the piezoelectric element 400
In particular, various characteristics such as electric field distortion characteristics are excellent.

The average thickness of such a piezoelectric layer 430 is
Although not particularly limited, it is preferably about 0.1 to 50 μm, more preferably about 0.3 to 10 μm. By setting the average thickness of the piezoelectric layer 430 within the above range, it is possible to obtain a piezoelectric element 400 that can suitably exhibit various characteristics while preventing the piezoelectric element 400 (and by extension, the head H) from becoming large. You can

On the piezoelectric layer 430, the upper electrode 410 serving as the other electrode for applying a voltage to the piezoelectric layer 430.
Are formed (provided).

This upper electrode 410 is composed of a plurality of piezoelectric elements 4.
00 as individual electrodes. That is, the plan view shape of the upper electrode 410 is the piezoelectric layer 430.
Is formed so as to have almost the same shape as the plan view.

As the constituent material of the upper electrode 410, the same materials as those mentioned above for the lower electrode 420 can be used. For example, platinum (Pt), iridium (I)
Various conductive materials such as r), aluminum (Al), and alloys containing these are listed, and one kind or a combination of two or more kinds thereof can be used.

When the upper electrode 410 is made of aluminum, it is preferable to stack layers made of iridium or the like. As a result, deterioration of the upper electrode 410 due to electrolytic corrosion can be prevented or suppressed.

The average thickness of the upper electrode 410 is
Although not particularly limited, it is preferably about 1 to 1000 nm, more preferably about 10 to 500 nm.

In such a head H, a predetermined ejection signal is not input from the piezoelectric element drive circuit described later,
That is, the piezoelectric layer 430 is not deformed in the state where no voltage is applied between the lower electrode 420 and the upper electrode 410 of the piezoelectric element 400. Therefore, the diaphragm 300
However, no deformation occurs and the volume of the ink chamber 210 does not change. Therefore, no ink droplet is ejected from the nozzle hole 110.

On the other hand, when a predetermined ejection signal is input from the piezoelectric element drive circuit, that is, a constant voltage (for example, about 10 to 50 V) is applied between the lower electrode 420 and the upper electrode 410 of the piezoelectric element 400. In this state, the piezoelectric layer 430 is deformed. As a result, the diaphragm 300 is largely deflected (the downward deflection in FIG. 5), and the ink chamber 210
A decrease (change) in the volume of occurs. At this time, the ink chamber 2
The pressure inside 10 is momentarily increased, and ink droplets are ejected from the nozzle holes 110.

When the discharge of ink is completed once, the piezoelectric element drive circuit stops the application of the voltage between the lower electrode 420 and the upper electrode 410. Thereby, the piezoelectric element 40
0 returns to almost the original shape, and the volume of the ink chamber 210 increases. At this time, a pressure (a pressure in the forward direction) from the ink cartridge 31 to the nozzle hole 110 acts on the ink. For this reason, the air will not flow through the nozzle holes 11
0 is prevented from entering the ink chamber 210, and an amount of ink commensurate with the ejected amount of ink is supplied from the ink cartridge 31 (reservoir chamber 230) to the ink chamber 210.

In this way, in the head H, arbitrary (desired) characters or figures can be printed by sequentially inputting ejection signals from the piezoelectric element drive circuit to the piezoelectric element 400 at the position to be printed. You can

As described above, the ink jet recording head H of the present invention includes the piezoelectric element 400 which is excellent in various characteristics such as electric field distortion characteristics. Therefore, the piezoelectric element 400 can be operated with a smaller voltage, so that the piezoelectric element drive circuit can be simplified and the power consumption can be reduced.

Further, the piezoelectric element 400 can be downsized. In this case, if the width of the piezoelectric element 400 (the length in the minor axis direction) is shortened, the width of the ink chamber 210 can also be reduced, and as a result, the pitch of the nozzle holes 110 can also be reduced, so that the height can be increased. It enables accurate printing. Further, if the length of the piezoelectric element 400 (length in the major axis direction) is shortened, the head H can be further downsized.

Next, the method of manufacturing the head H will be described with reference to FIG.
The description will be made with reference to FIG. Head H mentioned above
Can be manufactured, for example, as follows.

[0] Preparation of Substrate First, as described above, for example, the substrate 10 in which the Si single crystal substrate 20 and the Si single crystal layer 60 have different orientations is manufactured. Here, Si
A case where the single crystal substrate 20 has a (110) orientation and the Si single crystal layer 60 has a (100) orientation will be described.

[1] Formation of Underlayer 700 (S in FIG. 6)
1) Next, a base layer 700 made of, for example, SrO is formed on the Si single crystal layer 60.

The underlayer 700 grows under the influence of the crystal structure of the Si single crystal layer 60. Si single crystal layer 60
Has a (100) orientation, the Si single crystal layer 6
When the base layer 700 is formed on the base layer 0, the base layer 700 is epitaxially grown in a cubic (100) orientation.

A laser ablation method is preferably used as a method (film forming method) for forming the underlayer 700.
According to this method, the underlayer 7 can be easily and reliably used by using a vacuum device having a simple structure provided with a laser light entrance window.
00 can be formed.

Specifically, first, the substrate 10 (sample)
The back pressure at room temperature is 133 × 10 ⁻⁹ to 133, for example.
× 10 ⁻⁶ Pa (1 × 10 ⁻⁹ to 1 × 10 ⁻⁶ Tor
It is installed in a vacuum device whose pressure is reduced to about r).

In the vacuum apparatus, a target containing the constituent elements of the underlayer 700 is arranged facing the substrate 10 at a predetermined distance. As this target, a target having the same composition as or similar to the composition of the target underlayer 700 is preferably used.

Then, for example, an infrared lamp (heating means)
Etc., the substrate 10 is heated to raise the temperature.

The temperature rising rate is not particularly limited, but is 1
It is preferably about 20 ° C / minute, more preferably about 5-15 ° C / minute.

The temperature of the sample (achieved temperature) is not particularly limited, but is preferably about 300 to 800 ° C, and more preferably about 400 to 700 ° C.

The conditions such as the rate of temperature rise, the temperature of the sample, the pressure in the vacuum apparatus, etc. are not limited to the above range as long as the thermal oxide film is not formed on the surface of the substrate 10. .

Next, when the target is irradiated with laser light, atoms including oxygen atoms and metal atoms are knocked out from the target, and plumes are generated. In other words, the plume is irradiated toward the substrate 10. Then, the plume comes into contact with the substrate 10 (Si single crystal layer 60) to form the underlayer 700.

This laser light preferably has a wavelength of 15
The pulsed light has a pulse length of about 0 to 300 nm and a pulse length of about 1 to 100 ns. Specifically, as the laser light,
For example, ArF excimer laser, KrF excimer laser, excimer laser such as XeCl excimer laser, YAG laser, YVO ₄ laser, CO ₂ laser and the like can be mentioned. Among these, ArF excimer laser or KrF excimer laser is particularly preferable as the laser light. Both the ArF excimer laser and the KrF excimer laser are easy to handle, and atoms can be ejected from the target more efficiently.

The conditions for forming (depositing) the underlayer 700 may be any as long as the underlayer 700 can be epitaxially grown. For example, the following can be adopted.

The frequency of the laser light is preferably 30 Hz or less, more preferably 15 Hz or less.

The energy density of laser light is 0.5 J
/ Cm ² or more is preferable, and ² J / cm ² or more is more preferable.

The distance between the sample and the target is 60 m
It is preferably m or less, and more preferably 45 mm or less.

The pressure in the vacuum device is preferably 1 atm or less, of which the oxygen partial pressure is, for example, 133 × 10 ⁻³ Pa (1 × 10 ⁻³ Torr) under the supply of oxygen gas.
The above is preferable, and 133 × 10 ⁻⁵ Pa (1 × 10 ⁻⁵ Torr) or more is preferable under the supply of atomic oxygen radicals.

By setting the respective conditions for forming the underlayer 700 within the above ranges, the underlayer 70 can be more efficiently formed.
0 can be formed by epitaxial growth.

At this time, the average thickness of the underlayer 700 can be adjusted within the range described above by appropriately setting the irradiation time of the laser light. in this case,
Although the irradiation time of the laser beam varies depending on the above-mentioned conditions, it is generally preferably 2 hours or less, more preferably 1 hour or less.

As a method of forming the underlayer 700,
The present invention is not limited to this, and various thin film forming methods such as a vacuum vapor deposition method, a sputtering method, a MOCVD method, a sol-gel method, and a MOD method can be used.

[2] Formation of Conductive Oxide Layer 420 ′ (S2 in FIG. 6) Next, a conductive oxide layer 420 ′ made of, for example, SrRuO ₃ is formed on the underlayer 700. The conductive oxide layer 420 ′ is divided into the lower electrode 420 by the step [5] described later.

The conductive oxide layer 420 'is the base layer 700.
The crystals grow under the influence of the crystal structure of. Underlayer 700
Has a cubic (100) orientation, and therefore, when the conductive oxide layer 420 ′ is formed on the underlayer 700, the conductive oxide layer 420 ′ is epitaxially grown with a pseudo cubic (001) orientation. .

The conductive oxide layer 420 'can be formed in the same manner as in the step [1]. That is, the laser ablation method is suitable as the method (film forming method) for forming the conductive oxide layer 420 ′, but the method is not limited to this, and examples thereof include a vacuum evaporation method, a sputtering method,
Various thin film forming methods such as MOCVD method, sol-gel method, and MOD method can also be used.

[3] Formation of ferroelectric material layer 430 '
(S3 in FIG. 6) Then, on the conductive oxide layer 420 ', for example, the composition ratio P
b (Zr_0.56Ti _0.44) O_ThreeConsisting of PZT
A ferroelectric material layer 430 'is formed. In addition, this ferroelectric
The body material layer 430 'is divided by the step [5] described later.
Thus, the piezoelectric layer 430 is formed.

The ferroelectric material layer 430 'undergoes crystal growth under the influence of the crystal structure of the conductive oxide layer 420'. Since the conductive oxide layer 420 ′ has a pseudo-cubic (001) orientation, when the ferroelectric material layer 430 ′ is formed on the conductive oxide layer 420 ′, the ferroelectric material layer 430 ′ is formed.
Grows epitaxially with a rhombohedral (001) orientation.

The ferroelectric material layer 430 'can be formed in the same manner as in the above step [1]. That is, a laser ablation method is suitable as a method (film forming method) for forming the ferroelectric material layer 430 ′, but the invention is not limited to this, and for example, a vacuum vapor deposition method, a sputtering method,
Various thin film forming methods such as MOCVD method, sol-gel method, and MOD method can also be used.

[4] Formation of Conductive Oxide Layer 410 '(S4 in FIG. 6) Next, for example, SrRuO is formed on the ferroelectric material layer 430'.
_A conductive oxide layer 410 ′ of 3 is formed. In addition,
This conductive oxide layer 410 ′ is divided into the upper electrode 410 by the step [5] described later.

The conductive oxide layer 410 'can be formed in the same manner as in the step [1]. That is, the laser ablation method is suitable as the method for forming the conductive oxide layer 410 ′ (film forming method), but the method is not limited to this, and for example, a vacuum vapor deposition method, a sputtering method,
Various thin film forming methods such as MOCVD method, sol-gel method, and MOD method can also be used.

[5] Formation of Piezoelectric Element 400 (S in FIG. 7)
5) Next, the conductive oxide layer 420 ′ and the ferroelectric material layer 43
0'and the conductive oxide layer 410 'are processed (divided) into a predetermined shape to form a plurality of piezoelectric elements (piezoelectric actuators).
Form 400.

Specifically, first, the conductive oxide layer 41 is formed.
After forming a resist on the surface 0 ′ by, for example, spin coating, the ink chamber 210 is exposed, developed, and patterned according to the position where the ink chamber 210 is to be formed. Then, using the remaining resist as a mask, etching is performed by, for example, ion milling. As a result, unnecessary portions of the conductive oxide layer 410 ′, the ferroelectric material layer 430 ′ and the conductive oxide layer 420 ′ are removed, and the plurality of piezoelectric elements 400 are obtained.

[6] Formation of Ink Chamber Substrate 200 (FIG. 7)
S6) Next, at the positions corresponding to the piezoelectric elements 400 of the Si single crystal substrate 20, the concave portions 210 ′ that become the ink chambers 210 are formed.
And the reservoir chamber 230 and the supply port 2 at predetermined positions.
A concave portion to be 40 is formed.

Specifically, in accordance with the positions where the ink chamber 210, the reservoir chamber 230 and the supply port 240 are to be formed,
On the surface of the Si single crystal substrate 20 opposite to the piezoelectric element 400,
After forming the mask, etching is performed. This allows
An unnecessary portion of the Si single crystal substrate 20 is removed, and the ink chamber substrate 200 is obtained.

As described above, since the substrate 10 has the stopper layer 30, the erosion due to etching stops when it reaches the stopper layer 30. Therefore, it is possible to preferably prevent the piezoelectric element 400 from being corroded excessively (more than necessary) due to etching.

At this time, the portion left unetched becomes the side wall 220, and the exposed stopper layer 30 can function as a vibration plate together with the Si single crystal layer 60 bonded thereon. Becomes

This etching includes, for example, parallel plate type reactive ion etching, inductive coupling type, electron cyclotron resonance type, helicon wave excitation type, magnetron type, plasma etching type, ion beam etching type dry etching, and the like. Wt% -40
Wet etching using a high-concentration alkaline aqueous solution such as potassium hydroxide or tetramethylammonium hydroxide in an amount of about wt.
A combination of two or more species can be used. Among these, it is particularly preferable to use wet etching with potassium hydroxide or the like for etching. According to such wet etching, the Si single crystal substrate 20 is anisotropically etched, so that the recess 210 ′ and the reservoir chamber 2 are
It is possible to easily and accurately form the recesses that will be the 30 and the supply port 240. Therefore, the ink chamber substrate 200 having higher dimensional accuracy can be obtained.

Moreover, in this embodiment, the Si single crystal substrate 2 is used.
Since the (110) orientation is used as 0, the erosion by anisotropic etching efficiently proceeds in a direction substantially perpendicular to the surface direction of the Si single crystal substrate 20.

[7] Completion of Head H (S7 in FIG. 7) Next, for example, the nozzle plate 100 made of stainless steel is aligned and joined so that the nozzle holes 110 correspond to the recesses 210 '. As a result, the plurality of ink chambers 210,
The reservoir chamber 230 and the plurality of supply ports 240 are partitioned and formed.

For this joining, for example, various bonding methods using an adhesive and various fusion bonding methods can be used.

Finally, the ink chamber substrate 200 is attached to the substrate 500.
Then, the ink jet type recording head H is completed.

In the head H of this embodiment, the diaphragm 300 is composed of the stopper layer 30 and the Si single crystal layer 60, but the diaphragm 300 is entirely composed of only the stopper layer 30. The stopper layer 30 and S
A configuration may be adopted in which an intermediate layer for any purpose is provided between the i single crystal layer 60 and the i single crystal layer 60.

Further, in the present embodiment, the lower electrode 420 and the upper electrode 410 are individual electrodes provided for each piezoelectric element 400. However, one of the lower electrode 420 and the upper electrode 410 is used for each piezoelectric element. It may be provided as a common electrode of the element 400.

<Inkjet Printer> Next, an inkjet printer having an inkjet recording head will be described.

FIG. 8 is a schematic view showing an embodiment of the ink jet printer of the present invention. In the following description, the upper side in FIG. 8 is referred to as “upper” and the lower side is referred to as “lower”.

The ink jet printer 1 shown in FIG.
The apparatus main body 2 is provided, and a tray 21 on which a recording sheet (recording medium) P is installed in the upper back and a recording sheet P in the lower front.
A paper discharge port 22 for discharging paper and an operation panel 7 are provided on the upper surface.

The operation panel 7 is composed of, for example, an organic EL display, a liquid crystal display, an LED lamp and the like, and a display section (not shown) for displaying error messages and the like
And an operation unit (not shown) composed of various switches and the like.

Further, a printing apparatus (printing means) mainly including a reciprocating head unit 3 inside the apparatus main body 2
4, a paper feeding device (paper feeding unit) 5 that feeds the recording paper P one by one to the printing device 4, a control unit (controlling unit) 6 that controls the printing device 4 and the paper feeding device 5, and power is supplied to each unit. And a power supply unit (not shown) for supplying the power.

Under the control of the controller 6, the paper feeding device 5 intermittently feeds the recording papers P one by one. This recording paper P is
It passes near the bottom of the head unit 3. At this time, the head unit 3 reciprocates in a direction substantially orthogonal to the feeding direction of the recording paper P, and printing on the recording paper P is performed. That is, the reciprocating motion of the head unit 3 and the recording paper P
Intermittent feeding serves as main scanning and sub-scanning in printing, and inkjet printing is performed.

The printing apparatus 4 comprises a head unit 3, a carriage motor 41 which is a drive source of the head unit 3,
A reciprocating mechanism 42 that reciprocates the head unit 3 in response to the rotation of the carriage motor 41 is provided.

The head unit 3 has a head H of the present invention having a large number of nozzle holes 110 in the lower part thereof, and a head H.
It has an ink cartridge 31 for supplying ink to the head and a carriage 32 on which the head H and the ink cartridge 31 are mounted.

By using an ink cartridge 31 filled with four color inks of yellow, cyan, magenta, and black (black), full-color printing becomes possible. In this case, the head unit 3 is provided with the head H corresponding to each color.

The reciprocating mechanism 42 has a carriage guide shaft 421 whose both ends are supported by a frame (not shown).
And a timing belt 422 extending parallel to the carriage guide shaft 421.

The carriage 32 has the carriage guide shaft 4
The timing belt 422 is supported so as to reciprocate and is fixed to a part of the timing belt 422.

When the timing belt 422 travels forward and backward through the pulleys by the operation of the carriage motor 41, the head unit 3 reciprocates by being guided by the carriage guide shaft 421. Then, during this reciprocal movement, ink is appropriately ejected from the head H and printing on the recording paper P is performed.

The paper feeding device 5 has a paper feeding motor 51 which is a drive source thereof, and a paper feeding roller 52 which is rotated by the operation of the paper feeding motor 51.

The paper feed roller 52 is a driven roller 52 that vertically opposes the feed path (recording paper P) for the recording paper P.
a and a driving roller 52b, the driving roller 52b
Is connected to the paper feed motor 51. As a result, the paper feed roller 52 can feed the large number of recording papers P set on the tray 21 toward the printing apparatus 4 one by one. Note that, instead of the tray 21, a paper feed cassette for containing the recording paper P may be detachably mountable.

The control section 6 is based on print data input from a host computer such as a personal computer or a digital camera, and the printing device 4 and the paper feeding device 5
Printing is performed by controlling the above.

Although not shown in the drawings, the control section 6 mainly drives a piezoelectric element (vibration source) 400 and a memory that stores a control program for controlling each section, and controls the ejection timing of ink. Drive circuit, printing device 4
A drive circuit for driving the (carriage motor 41), a drive circuit for driving the paper feeding device 5 (paper feeding motor 51), a communication circuit for obtaining print data from the host computer, and a data processing circuit for processing the print data. , And a CPU electrically connected to them and performing various controls in each unit.

[0187] Further, for example, the CPU is provided with environmental conditions (for example, temperature, humidity, etc.) around the head H, ink ejection status, printing status on the recording paper (recording medium) P, supply status of the recording paper P. Various sensors capable of detecting the concentration of the ink solvent in the atmosphere near the printing portion of the recording paper P are electrically connected to each other.

In such an ink jet printer 1, first, the CPU obtains print data via the communication circuit and stores it in the memory. Then, the data processing circuit processes this print data. Next, the CPU outputs a drive signal to each drive circuit based on the processed data and the detection data of various sensors. The piezoelectric element 400, the printing device 4, and the paper feeding device 5 are activated by this drive signal. As a result, the recording paper P is printed.

The substrate, the ink jet recording head and the ink jet printer of the present invention have been described above based on the illustrated embodiments, but the present invention is not limited to these.

For example, each part constituting the substrate, the ink jet type recording head and the ink jet printer of the present invention may be replaced with any one exhibiting the same function, or other constitutions may be added.

Further, for example, in the method of manufacturing the substrate and the ink jet type recording head, an arbitrary step can be added.

Further, the constitution of the ink jet recording head of the above-described embodiment can be applied to, for example, a liquid ejecting mechanism of various industrial liquid ejecting apparatuses. In this case, in the liquid ejection device, in addition to the above-described inks (color dye inks such as yellow, cyan, magenta, and black),
For example, a solution or liquid substance having a viscosity suitable for ejection from a nozzle (liquid ejection port) of a liquid ejection mechanism can be used.

[0193]

As described above, since the substrate of the present invention has the Si single crystal substrate and the Si single crystal layer with the stopper layer interposed therebetween, when the Si single crystal substrate is etched. In addition, it is possible to prevent the inconvenience that the unnecessary portion is eroded by this etching. Also, Si
Select a single crystal substrate with an orientation suitable for etching, and form (provide) on it as a Si single crystal.
It is possible to select an orientation that can improve the characteristics of the vibration source.

Therefore, if the substrate of the present invention is used,
The inkjet recording head can be manufactured reliably and accurately, and the obtained inkjet recording head can be made small and have excellent performance.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a substrate of the present invention.

FIG. 2 is a diagram (cross-sectional view) for explaining a manufacturing process of the substrate shown in FIG.

FIG. 3 is a diagram (cross-sectional view) for explaining a manufacturing process of the substrate shown in FIG.

FIG. 4 is an exploded perspective view (partially cut away) showing an embodiment of the ink jet recording head of the present invention.

5 is a cross-sectional view showing a configuration of a main part of the ink jet recording head shown in FIG.

FIG. 6 is a diagram (cross-sectional view) for explaining a manufacturing process of a main part of the ink jet recording head shown in FIG.

FIG. 7 is a diagram (cross-sectional view) for explaining a manufacturing process of a main part of the ink jet recording head shown in FIG.

FIG. 8 is a schematic view showing an embodiment of an inkjet printer of the present invention.

[Explanation of symbols]

1 ... Inkjet printer 2 ... Device body 21
・ ・ ・ Tray 22 ‥‥ Paper output port 3 ‥‥ Head unit
31 ... Ink cartridge 32 ... Carriage 4
Printing device 41 Carriage motor 42 Reciprocating mechanism 421 Carriage guide shaft 422
Timing belt 5 Feeding device 51 Feeding motor 52 Feeding roller 52a Driven roller 52
b: Driving roller 6: Control unit 7: Operation panel
10 substrate 10b Si single crystal plate 20 Si
Single crystal substrate 20a ... Si Single crystal plate 20b..Si
Single crystal plate 30 ··· Stopper layer 60 ··· Si single crystal layer 60a ··· Si single crystal plate 60b ··· Si single crystal plate 9
0 Thermal oxide film 100 Nozzle plate 110 Nozzle hole 200 Ink chamber substrate 210 Ink chamber
210 '... Recess 220 ... Side wall 230 ... Reservoir chamber 240 ... Supply port 300 ... Vibration plate 310
Communication hole 400 Piezoelectric element 410 Upper electrode 410 'Conductive oxide layer 420 Lower electrode
420 '... Conductive oxide layer 430 .. Piezoelectric layer
430 '... Ferroelectric material layer 500 ... Substrate 700
Underlayer H Inkjet recording head P
‥Recording sheet

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Higuchi Amako             Seiko, 3-3-3 Yamato, Suwa City, Nagano Prefecture             -In Epson Corporation F-term (reference) 2C057 AF93 AG44 AP02 AP23 AP25                       AP27 AP34 AP52 AP53 AP54                       AP56 AP57 AQ02 AQ06 BA04                       BA14

Claims (20)

[Claims] 1. A substrate used for manufacturing an ink jet recording head, comprising: a Si single crystal substrate on which a predetermined pattern including a recess serving as an ink chamber for storing ink is formed by etching; A substrate having a stopper layer having a function of preventing the progress of erosion, and a Si single crystal layer provided on the opposite side of the Si single crystal substrate via the stopper layer. 2. The substrate according to claim 1, wherein the stopper layer is made of a substance in an amorphous state. 3. The substrate according to claim 2, wherein the substance in the amorphous state is an oxide. 4. The oxide is SiO _2.
The substrate according to. 5. The substrate according to claim 2, wherein the substance in the amorphous state is a nitride. 6. The stopper layer has an average thickness of 10
The substrate according to claim 1, which has a thickness of 0 nm to 50 μm. 7. The substrate according to claim 1, wherein the etching is anisotropic etching. 8. The orientation directions of the Si single crystal substrate and the Si single crystal layer are different from each other.
The substrate according to any one of 1. 9. The substrate according to claim 1, wherein the Si single crystal substrate has a (110) orientation. 10. The substrate according to claim 1, wherein the Si single crystal layer has a (100) orientation or a (111) orientation. 11. An ink jet recording head manufactured by using the substrate according to any one of claims 1 to 10. 12. The ink jet recording head according to claim 11, wherein the Si single crystal substrate is an ink chamber substrate that forms a plurality of ink chambers. 13. The ink jet recording head according to claim 12, wherein a vibration source is provided on the opposite side of the Si single crystal layer from the stopper layer so as to correspond to the plurality of ink chambers. 14. The ink jet recording head according to claim 13, further comprising a base layer provided between the vibration source and the Si single crystal layer, the base layer having a function of improving a bonding property between the vibration source and the Si single crystal layer. 15. The ink jet recording head according to claim 13, wherein the stopper layer constitutes at least a part of a diaphragm vibrated by the vibration of the vibration source. 16. The ink jet recording head according to claim 13, wherein the stopper layer constitutes, together with the Si single crystal layer, a diaphragm vibrating by vibration of the vibration source. 17. The ink jet recording head according to claim 15, wherein a volume of the ink chamber is changed by vibration of the vibrating plate, and the volume of the ink chamber ejects ink. 18. The nozzle hole capable of ejecting ink respectively corresponding to the plurality of ink chambers is provided on the side of the ink chamber substrate opposite to the vibrating plate. The ink jet recording head according to 1. 19. The ink jet recording head according to claim 18, wherein the plurality of nozzle holes are formed in a nozzle plate provided on a side of the ink chamber substrate opposite to the vibrating plate. 20. An ink jet printer comprising the ink jet recording head according to any one of claims 11 to 19.