JP2003257842A - Device and method for correcting proximity effect, storage medium, and program - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To accurately and easily correct a proximity effect in an extremely short time not only in the case where a figure to be corrected coincides with a desired shape (aimed figure), but also in another case where the figure to be corrected is different from the desired shape. <P>SOLUTION: For the proximity effect in the figure to be corrected, only a light intensity value in the vicinity of a specific portion required for correction, for example, at a spot which is separated from an edge of the figure to be corrected by a distance shorter than a prespecified specific value is calculated based on the specific value and the figure to be corrected is corrected based on the light intensity value. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus, method, storage medium and program for performing proximity effect correction when exposing a mask pattern by lithography.

[0002]

2. Description of the Related Art Recently, the demand for miniaturization of semiconductor circuits has been increasing more and more, and accordingly, the influence of the proximity effect cannot be ignored. Due to the influence of this proximity effect, there is a problem that a semiconductor circuit as designed cannot be manufactured. Therefore, a process called proximity effect correction is performed in which the influence of the proximity effect is grasped in advance and the design data is changed in advance so that a desired dimension can be obtained.

In the conventional proximity effect correction processing, in the sides of the figure to be corrected, the distance to the adjacent side calculated in the vertical direction, the size of the figure to which the side belongs, and the distance to the side further ahead. It has been dealt with by calculating such as and defining a proximity effect correction rule corresponding to these values.

However, there is a limit to the definition of the correction rule, and it is difficult to express a complicated shape by a rule. Therefore, recently, a sufficient correction effect can be obtained even in a complicated arrangement of mask patterns. Utilization of a simulator is considered as a means.

When performing proximity effect correction using a simulator, it is general to first obtain and use a light intensity distribution for a certain area including the correction target graphic. Since the calculated light intensity distribution is discrete,
The light intensity value for the required point is obtained by linear interpolation.

When obtaining the light intensity distribution, first, a Fourier transform image of the mask pattern is obtained, and then a process called fast Fourier transform (FFT) is performed to obtain the light intensity distribution. The number of processing operations T _{1 in the} case of performing the one-dimensional FFT is represented by the following equation.

T ₁ = N log ₂ (N) Here, N is the number of grids of points for which the light intensity distribution is to be obtained. For example, when N = 8, T ₁ = 24. The number of grids when actually calculating the light intensity distribution is 3 μm in 0.01 μm increments.
Considering the range of, N = 300. Where FFT
When using, N must be a power of 2, so we will use numbers such as N = 256, 512.

On the other hand, the number of processing operations T ₂ when performing the two-dimensional FFT is expressed by the following equation. T ₂ = N ³ log ₂ (N) Here, the number of calculations T ₂ required when obtaining the light intensity distribution with the number of grids of 256 × 256 is 1.3 × 10 ⁸ .

[0009]

As described above, it is possible to derive the optimum proximity effect correction shape by simulating each exposure result by using a simulator, but on the other hand, it is not easy to correct the correction processing. There is a problem that it takes time, and it is unrealistic in terms of processing time to obtain the light intensity distribution for all the regions of the enormous amount of design data.

Further, when the correction target graphic does not represent a desired shape, no method has been devised for performing an appropriate proximity effect correction.

The present invention has been made in view of the above problems, and not only when the correction target graphic matches the desired shape (target graphic) but also when the correction target graphic is different from the desired shape, Proximity effect correction device, method, storage medium, and storage medium capable of accurately and easily correcting proximity effect in an extremely short time, responding to the demand for further miniaturization of semiconductor elements, and manufacturing a highly reliable semiconductor device The purpose is to provide the program.

[0012]

As a result of intensive studies, the present inventor has come up with various aspects of the invention described below.

The present invention is directed to an apparatus, a method, a storage medium and a program for automatically correcting a proximity effect when a mask pattern is exposed by lithography.

According to the proximity effect correction method of the present invention, the light intensity value only in the vicinity of a specific portion necessary for correction of the proximity effect in the correction target graphic is calculated, and the correction target graphic is corrected based on the light intensity value.

When exposing the mask pattern by lithography, if the mask pattern as the correction target figure has a desired shape, the proximity effect correction method of the present invention is based on a prescribed value defined in advance. The first procedure for determining that the side of the correction target figure existing in the vicinity of the portion where the distance between the edges of the figure of the shape is a specified value or less is the correction target site, and the light only in the vicinity of the correction target site The method includes a second procedure for calculating an intensity value and a third procedure for correcting the correction target graphic based on the calculated light intensity value.

When the figure to be corrected has a mask pattern different from the desired shape, the proximity effect correction method according to the present invention determines the distance between the edges of the figure having the desired shape based on a prescribed value defined in advance. A first procedure of determining that a side of a correction target figure existing in the vicinity of a portion that is equal to or less than a specified value is a correction target site of proximity effect, and only on a figure of a desired shape within a predetermined range near the correction target site And a third step of correcting the correction target graphic based on the calculated light intensity value.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION-Basic essence of the present invention-The present inventor has noticed that information on all the obtained light intensity distributions is not necessary when performing proximity effect correction. Therefore, in the present invention, the light intensity value is required without obtaining the light intensity distribution, that is, the vicinity of the point where the distance between the edges of the correction target graphic is less than or equal to the specified value based on the specified value that is specified in advance. The basic skeleton is to directly calculate the light intensity value without interpolation calculation only for the points existing in.

Here, the spectrum immediately before the FFT processing is S (n, m), the coordinates of the point where the light intensity value is required are (x, y), and p _x is the width in the x direction in a certain region, p _{If y} is the width in the y direction, the light intensity value I (x, y) at that point
Can be calculated by the following formula. I (x, y) = Σ n Σ m exp [-i2π {(nx / p x)
+ (My / _py )} S (n, m)

Number of calculations T for obtaining the light intensity value at one point T
_p has T _p = N ² . For example, in the one-dimensional processing, if the calculation point of the light intensity value required for performing the proximity effect correction is N _i ,
Higher speed processing than the conventional method is possible when the following equation is satisfied. N _i <Nlog ₂ (N)

For example, as shown in FIG. 1, when the figure to be corrected is a quadrangle, the light intensity value required for performing the proximity effect correction is about 20 points in the vicinity of each side of interest, and the above conditions are satisfied. Is satisfied, and high-speed proximity effect correction processing is realized. Also, using the present invention does not require interpolation calculations,
It is possible to obtain highly accurate calculation results.

-Specific Embodiments- Based on the basic essence of the present invention described above, specific embodiments to which the present invention is applied will be described in detail with reference to the drawings. The proximity effect correction device in each of the following embodiments calculates a light intensity value only in the vicinity of a specific portion necessary for the proximity effect correction in the correction target graphic, and corrects the correction target graphic based on the light intensity value. It is the main component.

(First Embodiment) In this embodiment, when the mask pattern is exposed by lithography, when the correction target graphic matches the desired shape (target graphic) to be realized by exposing the mask pattern, Targets proximity effect correction.

FIG. 2 is a block diagram showing the schematic arrangement of the proximity effect correction apparatus according to this embodiment. According to this proximity effect correction device, a side of a correction target graphic existing near a portion where a distance between edges in a graphic of a desired shape is equal to or smaller than a predetermined value is a correction target portion of the proximity effect based on a predetermined predetermined value. To be corrected, a light intensity value calculation means 2 to calculate a light intensity value only on a figure having a desired shape within a predetermined range near the correction target region, and the calculated light intensity value. Thus, it comprises an optimum movement amount determining means 3 for determining the optimum movement amount of each side of the correction target graphic, and a side moving means 4 for correcting the correction target graphic based on the optimum movement amount.

FIG. 3 is a flowchart showing the proximity effect correction method according to this embodiment in the order of steps. For example,
When the proximity effect correction is performed on the correction target graphic as shown in FIG. 4, first, based on a prespecified value, the location where the distance between the edges of the correction target graphic is less than or equal to the specified value is the proximity effect correction target. It is determined to be a part (step 1). Here, the correction points 11 to 16 are the correction target parts. Here, as the specified value, for example, 0.2 μm is adopted when the exposure wavelength is 0.248 μm, and 0.18 μm is adopted when the exposure wavelength is 0.193 μm.

Then, the light intensity value I (x, y) at the light intensity value calculation point is calculated for each of the correction target parts 11 to 16 by the above-mentioned method (step 2).

Then, the optimum movement amount of the correction target sides 17 to 28 is determined according to the position of the light intensity contour line obtained from the calculated light intensity value (step 3). Here, for the sake of convenience, a case where the correction target figure (target figure) is a quadrangle constituted by sides a, b, c, d as shown in FIG. 5A will be described as an example. When the side a is to be corrected, the amount of deviation e between the target figure and the light intensity contour line is calculated, and then the optimum side movement amount f is determined. By performing the same thing for the sides b, c, and d, the optimum movement amount of all sides is determined.

Then, after obtaining the optimum movement amount for all the correction target sides (step 4), the correction target side is moved based on the optimum movement amount to correct the correction target figure (step 5). FIG. 5B shows an example after the proximity effect correction.

According to the proximity effect correction method of the present embodiment, the total processing time for obtaining the light intensity values of the 30 points near the side of the 5 μm × 4 μm region in FIG. It was When the light intensity distribution is calculated for the same area by the conventional method, the total processing time is 0.5
It took a second, and it was found that the proximity effect correction method of the present embodiment realizes extremely high-speed correction processing.

As described above, according to the present embodiment, when the mask pattern which is the correction target figure has a desired shape, the proximity effect is corrected accurately and easily in an extremely short time, and In response to the demand for further miniaturization,
It becomes possible to manufacture a highly reliable semiconductor device.

(Second Embodiment) In the present embodiment, when a mask pattern is exposed by lithography, the correction target figure is different from the desired shape (target figure) to be realized by exposing the mask pattern to the correction target figure. In this case, the proximity effect correction is targeted.

FIG. 6 is a block diagram showing the schematic arrangement of the proximity effect correction apparatus according to this embodiment. According to this proximity effect correction device, a side of a correction target graphic existing near a portion where a distance between edges in a graphic of a desired shape is equal to or smaller than a predetermined value is a correction target portion of the proximity effect based on a predetermined predetermined value. To be corrected, a light intensity value calculation unit 2 to calculate a light intensity value only on a figure having a desired shape within a predetermined range near the correction target region, and the calculated light intensity value. An optimum movement amount determining means 13 for determining the optimum movement amount of each side of the correction target graphic is provided, and a side moving means 14 for moving each side based on the optimum movement amount to correct the correction target graphic. ing.

When the figure to be corrected is different from the target figure as in this example, in the method of calculating the deviation amount of the light intensity contour line as in the first embodiment, as shown in FIG.
And the amount of movement of the side cannot be associated.

Therefore, in this embodiment, the proximity effect correction is performed as follows without using the light intensity contour lines. FIG. 8 is a flowchart showing the proximity effect correction method according to the present embodiment in order of steps. For example, as shown in FIG. 9, when the proximity effect correction is performed when the correction target graphic 21 and the target graphic 22 are different, first, two types of correction target graphics (corrected graphic 23: −Δ on all sides) in advance. When the correction is performed, the corrected figure 24: the case where the correction of + Δ is performed on all sides) is generated on a trial basis (step 11).

Then, the optimum movement amount of each side is calculated. Here, the side a will be described as an example. Sampling points s of the light intensity on the side of the target figure 22 near the side a
(N) is set (step 12). Where n is 1 to
13 Sampling is determined so that the interval between sampling points is a desired value or less. For example, when the length of the side is 0.1 μm and the sampling interval is desired to be 0.03 μm or less, the number of samplings on the side must be at least four. When it is desired to emphasize the light intensity value at the center of the side, the number of samplings on the side is 5. It is empirically known that a sampling interval of about 0.1 × λ / NA is preferable, and that an odd number of samplings on one side is used to obtain a good result. Here, λ is the exposure wavelength and NA is the numerical aperture.

Subsequently, only the sampling points where the distance from the center of the side a to the sampling points is within R, that is, S
(4) to S (10) are left and the light intensity value I (n, x) when three types of masks (corrected figure 23, correction target figure 21, corrected figure 24) are used is calculated and stored. (Step 13). Here, n is the sample number, and X is the movement amount of the side. Also, empirically, R is 0.1 × λ / NA
It is preferable to use ˜0.3 × λ / NA. In this example, 21 light intensity values are calculated.

Then, the light intensity value calculated in step 13
Using I (n, x), the light intensity value at an arbitrary amount of movement is approximated by the following formula (step 14). Where n is 1
~ 4. I (n, x) = A (n) · x + B (n) · x 2 + C (n) In this case, three movement amount for one sampling point (0, -Δ, + Δ) light intensity values for the known Therefore, it is possible to approximate by the above quadratic equation.

Then, instead of the deviation amount e from the light intensity contour line, the error amount E is used to obtain the optimum movement amount x of the side where E becomes the minimum (step 15). This gives the best amount of edge movement when trying to solve by moving edges. E = Σ ¹⁰ _{n = 4} W (n) {I (n, x) −t} ² Here, t is the target light intensity value, which is the same as the value of the light intensity contour line for calculating the deviation amount. W (n) is a weighting factor of the sampling point and is defined by the following equation. W (n) = 1-r / R where r is the absolute value of the distance from the center of the side to the sampling point,

The equation defining this weighting coefficient is not fixed, but needs to be changed depending on the pattern shape to be corrected. The following may be considered as examples. W (n) = 2-r / R W (n) = 1- (r / R) ²

In a situation where the mutual interference between the edges is strong, the result after correction is good if a large weight value is set even at a distant sampling point, and conversely, if there is little mutual dependence, a nearby sampling point is obtained. Should have a large value. The form of the function that determines the weighting coefficient is 0 <
It has been found that if the number is constantly reduced while r <R, the number of minute projections generated in the corrected graphic shape is reduced.

If the weighting factor is set so that the weighting factor is closer to the corner portion, the weighting coefficient can be prevented from being excessively corrected at the corner portion. The weighting factor in that case is as follows. W (n) = (1-r / R) W _c W _c = 1; d> 0.05 W _c = 0; d ≦ 0.05 where d is the absolute distance from the corner C to the sampling point. It is a value.

Further, as shown in FIG. 10, when different weights are given to the corners of the convex portions 41 and the concave portions 42, W (n) = (1-r / R) * _Wc1 * _Wc2 W _c1 = 1; d ₁ ≧ 0.05 W _c1 = d ₁ /0.05; d ₁ <0.05 W _c2 = 1; d ₂ ≧ 0.03 W _c1 = d ₁ /0.03; d ₂ <0.03. Here, d ₁ is the absolute value of the distance from the corner of the convex portion 41 to the sampling point, and d ₂ is the absolute value of the distance from the corner of the concave portion 42 to the sampling point.

Then, after obtaining the optimum movement amount for all the correction target sides (step 16), each side of the correction target graphic 21 is moved based on the optimum movement amount to correct the correction target graphic (step 17). .

As described above, according to the present embodiment, even when the correction target figure is different from the desired shape (target figure), the proximity effect is corrected accurately and easily in a very short time, and the semiconductor element is changed. In response to the demand for further miniaturization, it becomes possible to manufacture a highly reliable semiconductor device.

The functions of the proximity effect correction apparatus according to the first and second embodiments and the steps of the proximity effect correction method (steps 1 to 5 and steps 11 to 1).
7) can be realized by operating a program stored in the RAM or ROM of the computer. This program and a computer-readable storage medium recording the program are included in the embodiments of the present invention.

Specifically, the program is, for example, a CD
-Recorded in a recording medium such as a ROM, or provided to a computer via various transmission media. As the recording medium for recording the program, a flexible disk, a hard disk, a magnetic tape, a magneto-optical disk, a non-volatile memory card, or the like can be used in addition to the CD-ROM. On the other hand, as a transmission medium of the above-mentioned program, a communication medium (a wired line such as an optical fiber or the like) in a computer network (LAN, WAN such as Internet, wireless communication network, etc.) system for propagating and supplying program information as a carrier wave Wireless line) can be used.

Further, not only the functions of the above-described embodiments are realized by the computer executing the supplied program, but also the OS (operating system) or other application software running the program on the computer. In the case where the functions of the above-described embodiments are realized in cooperation with the above, or all or part of the processing of the supplied program is performed by the function expansion board or function expansion unit of the computer, the functions of the above-described embodiments are realized. However, such a program is also included in the embodiment of the present invention.

For example, FIG. 11 is a schematic diagram showing the internal structure of a general personal user terminal device. This Figure 1
1, reference numeral 1200 is a computer PC. PC
The 1200 includes a CPU 1201 and is stored in a ROM 1202 or a hard disk (HD) 1211 or a flexible disk drive (FD) 1212.
The device control software supplied from the computer is executed to collectively control each device connected to the system bus 1204.

Various aspects of the present invention will be collectively described below as supplementary notes.

(Supplementary Note 1) A method for automatically correcting the proximity effect when exposing a mask pattern by lithography, which is a light intensity value only in the vicinity of a specific portion necessary for the correction of the proximity effect in the correction target graphic. Is calculated, and the correction target figure is corrected based on the light intensity value.

(Supplementary Note 2) When exposing a mask pattern by lithography, when the mask pattern that is the correction target figure has a desired shape, a proximity effect that occurs during exposure is automatically corrected. A first procedure for determining a side of a correction target graphic existing in the vicinity of a position where a distance between edges in a graphic of a desired shape is equal to or less than a predetermined value as a correction target site based on a predetermined specified value. ,
A second calculating a light intensity value only in the vicinity of the correction target portion;
And a third procedure for correcting the correction target figure based on the calculated light intensity value.

(Supplementary Note 3) In the third procedure, the correction target figure is corrected based on the optimum amount of movement of the side determined from the position of the light intensity contour line obtained by the calculated light intensity value. The proximity effect correction method according to Supplementary Note 2.

(Supplementary Note 4) A method of automatically correcting the proximity effect when the mask pattern, which is the correction target figure, is different from the desired shape when the mask pattern is exposed by lithography, and is defined in advance. Based on the specified value, the first step of determining that the side of the correction target graphic existing in the vicinity of the location where the distance between the edges of the desired shape graphic is equal to or smaller than the specified value is the proximity effect correction target site. A second procedure for calculating a light intensity value only on a graphic having a desired shape within a predetermined range near the correction target region, and a third procedure for correcting the correction target graphic based on the calculated light intensity value And a proximity effect correction method.

(Supplementary Note 5) In the third procedure, the optimum movement amount of each side of the correction target graphic is determined based on the calculated light intensity value, and based on this, each side is moved to perform the correction. 5. The proximity effect correction method as described in appendix 4, wherein the target figure is corrected.

(Supplementary Note 6) A device for automatically correcting a proximity effect when a mask pattern is exposed by lithography, and a light intensity value only in the vicinity of a specific portion necessary for the correction of the proximity effect in a correction target figure. And a means for correcting the figure to be corrected based on the light intensity value.

(Supplementary Note 7) A device for automatically correcting a proximity effect generated at the time of exposure when a mask pattern as a correction target figure has a desired shape when the mask pattern is exposed by lithography. Correction target determining means for determining a side of the correction target graphic existing in the vicinity of a portion where the distance between the edges of the graphic of the desired shape is equal to or less than the predetermined value as the correction target site, based on the preset specified value. A proximity including a light intensity value calculating means for calculating a light intensity value only in the vicinity of the correction target region, and a correcting means for correcting the correction target figure based on the calculated light intensity value. Effect correction device.

(Supplementary Note 8) The correction means corrects the correction target graphic on the basis of the optimum movement amount of the side determined from the position of the light intensity contour line obtained by the calculated light intensity value. 7. The proximity effect correction device described in Supplementary Note 7.

(Supplementary Note 9) A device for automatically correcting the proximity effect when the mask pattern, which is the correction target figure, is different from the desired shape when the mask pattern is exposed by lithography, and is defined in advance. Based on the specified value, the correction target part determining means determines that the side of the correction target graphic existing in the vicinity of the position where the distance between the edges of the graphic of the desired shape is the specified value or less is the proximity effect correction target part. And a light intensity value calculating means for calculating a light intensity value only on a graphic having a desired shape within a predetermined range near the correction target region, and the correction target graphic is corrected based on the calculated light intensity value. A proximity effect correction device comprising a correction means.

(Supplementary Note 10) The correction means determines the optimum amount of movement of each side of the correction target graphic based on the calculated light intensity value, and based on this, moves each side to move the side of the correction target graphic. 10. The proximity effect correction device according to Supplementary Note 9, wherein the proximity effect correction device corrects

(Supplementary note 11) When the mask pattern is exposed by lithography, when the mask pattern as the correction target figure has a desired shape, the proximity effect generated at the time of exposure is automatically corrected in advance. A first step of determining a side of the correction target graphic existing in the vicinity of a portion where the distance between the edges of the graphic of the desired shape is equal to or less than the predetermined value as the correction target site based on the defined value; A program for causing a computer to execute a second procedure for calculating a light intensity value only in the vicinity of a correction target portion and a third procedure for correcting the correction target graphic based on the calculated light intensity value. A computer-readable storage medium stored.

(Supplementary Note 12) In the third procedure, the correction target figure is corrected on the basis of the optimum movement amount of the side determined from the position of the light intensity contour line obtained by the calculated light intensity value. The computer-readable storage medium according to appendix 11.

(Supplementary Note 13) When the mask pattern is exposed by lithography and the mask pattern as the correction target figure is different from the desired shape, when the proximity effect is automatically corrected, a predetermined rule is specified. A first step of determining, based on the value, a side of the correction target graphic existing in the vicinity of a portion where the distance between the edges of the graphic of the desired shape is equal to or less than the specified value as the correction target site of the proximity effect; A second procedure for calculating a light intensity value only on a figure having a desired shape within a predetermined range near the correction target portion, and a third procedure for correcting the correction target figure based on the calculated light intensity value. A computer-readable storage medium that stores a program for causing a computer to execute.

(Supplementary Note 14) In the third procedure, the optimum movement amount of each side of the correction target graphic is determined based on the calculated light intensity value, and based on this, each side is moved to perform the correction. 14. The computer-readable storage medium according to appendix 13, wherein the target graphic is corrected.

(Supplementary Note 15) When exposing a mask pattern by lithography, when the mask pattern, which is the correction target figure, has a desired shape, the proximity effect generated at the time of exposure is automatically corrected in advance. A first step of determining a side of the correction target graphic existing in the vicinity of a portion where the distance between the edges of the graphic of the desired shape is equal to or less than the predetermined value as the correction target site based on the defined value; A program for causing a computer to execute a second procedure for calculating a light intensity value only in the vicinity of a correction target region and a third procedure for correcting the correction target graphic based on the calculated light intensity value.

(Supplementary Note 16) In the third procedure, the correction target figure is corrected based on the optimum movement amount of the side determined from the position of the light intensity contour line obtained from the calculated light intensity value. The program according to appendix 15.

(Supplementary Note 17) When exposing the mask pattern by lithography, when the mask pattern as the correction target figure is different from the desired shape, when the proximity effect is automatically corrected, a predetermined rule is specified. A first step of determining, based on the value, a side of the correction target graphic existing in the vicinity of a portion where the distance between the edges of the graphic of the desired shape is equal to or less than the specified value as the correction target site of the proximity effect; A second procedure for calculating a light intensity value only on a figure having a desired shape within a predetermined range near the correction target portion, and a third procedure for correcting the correction target figure based on the calculated light intensity value. A program for causing a computer to execute and.

(Supplementary Note 18) In the third procedure, the optimum movement amount of each side of the correction target graphic is determined based on the calculated light intensity value, and based on this, each side is moved to perform the correction. 18. The program according to appendix 17, which corrects the target graphic.

[0067]

According to the present invention, not only when the figure to be corrected matches the desired shape (target figure) but also when the figure to be corrected is different from the desired shape, it is possible to accurately and easily perform in a very short time. It is possible to correct the proximity effect, meet the demand for further miniaturization of the semiconductor element, and manufacture a highly reliable semiconductor device.

[Brief description of drawings]

FIG. 1 is a schematic diagram for explaining a basic skeleton of the present invention.

FIG. 2 is a block diagram showing a schematic configuration of a proximity effect correction device according to the first embodiment.

FIG. 3 is a flowchart showing a proximity effect correction method according to the first embodiment in order of steps.

FIG. 4 is a schematic diagram showing an example of a proximity effect correction method according to the first embodiment.

FIG. 5 is a schematic diagram showing an example of a proximity effect correction method according to the first embodiment.

FIG. 6 is a block diagram showing a schematic configuration of a proximity effect correction device according to a second embodiment.

FIG. 7 is a schematic diagram for explaining an inconvenience when the correction target graphic is different from the target graphic.

FIG. 8 is a flowchart showing a proximity effect correction method according to a second embodiment in order of steps.

FIG. 9 is a schematic diagram showing an example of a proximity effect correction method according to a second embodiment.

FIG. 10 is a schematic diagram showing a state in the vicinity of an uneven portion when the proximity effect correction is performed by giving different weights to the corners of the uneven portion in the second embodiment.

FIG. 11 is a schematic diagram showing an internal configuration of a general personal user terminal device.

[Explanation of symbols]

1,11 correction target part determining means 2,12 Light intensity value calculation means 3,13 Optimal movement amount determining means 4,14 Edge moving means 21 Correction target figure 22 target figure 23,24 Corrected figure

Claims (10)

[Claims] 1. A method of automatically correcting a proximity effect when exposing a mask pattern by lithography, wherein a light intensity value only in the vicinity of a specific portion necessary for the correction of a proximity effect in a correction target figure is calculated. Then, the proximity effect correction method is characterized in that the correction target figure is corrected based on the light intensity value. 2. A method of automatically correcting a proximity effect that occurs at the time of exposure when a mask pattern, which is a correction target figure, has a desired shape when the mask pattern is exposed by lithography. A first step of determining a side of the correction target graphic existing in the vicinity of a portion where the distance between the edges of the graphic of the desired shape is equal to or less than the predetermined value as the correction target site based on the defined value specified above; Second calculation of the light intensity value only in the vicinity of the correction target region
And a third procedure for correcting the correction target figure based on the calculated light intensity value. 3. In the third procedure, the correction target graphic is corrected based on an optimum movement amount of a side determined from a position of a light intensity contour line obtained by the calculated light intensity value. The proximity effect correction method according to claim 2. 4. A method of automatically correcting a proximity effect when a mask pattern, which is a correction target figure, is different from a desired shape when the mask pattern is exposed by lithography. A first step of determining, based on the value, a side of the correction target graphic existing in the vicinity of a position where the distance between the edges of the graphic of the desired shape is equal to or less than a specified value as a correction target site of the proximity effect; A second procedure for calculating a light intensity value only on a figure having a desired shape within a predetermined range near the correction target portion, and a third procedure for correcting the correction target figure based on the calculated light intensity value. A proximity effect correction method comprising: 5. In the third procedure, the optimum movement amount of each side of the correction target graphic is determined based on the calculated light intensity value, and based on this, the respective side is moved, and the correction target graphic is moved. The proximity effect correction method according to claim 4, further comprising: 6. An apparatus for automatically correcting a proximity effect when exposing a mask pattern by lithography, wherein a light intensity value only in the vicinity of a specific portion necessary for the proximity effect correction in a correction target figure is calculated. Then, the proximity effect correction device is characterized by including a means for correcting the correction target figure based on the light intensity value. 7. When performing exposure of a mask pattern by lithography, when the mask pattern, which is a correction target figure, has a desired shape, a proximity effect generated at the time of exposure is automatically corrected. A first step of determining, based on a specified value, a side of a correction target graphic existing in the vicinity of a portion where a distance between edges in a desired shape graphic is equal to or less than the specified value as a correction target site; The second to calculate the light intensity value only near the part
And a computer-readable storage medium that stores a program for causing a computer to execute the procedure of 1. and a third procedure of correcting the correction target figure based on the calculated light intensity value. 8. When performing exposure of a mask pattern by lithography, when the mask pattern as a correction target figure is different from a desired shape, when a proximity effect is automatically corrected, a predetermined value is set. On the basis of the above, based on the first step, it is determined that the side of the correction target figure existing in the vicinity of the location where the distance between the edges of the figure of the desired shape is the specified value or less is the correction target site of the proximity effect; A second procedure for calculating a light intensity value only on a figure of a desired shape within a predetermined range near the site and a third procedure for correcting the correction target figure based on the calculated light intensity value are included. A computer-readable storage medium that stores a program to be executed by a computer. 9. When performing exposure of a mask pattern by lithography, when the mask pattern, which is a correction target figure, has a desired shape, a proximity effect that occurs at the time of exposure is automatically corrected. A first step of determining, based on a specified value, a side of a correction target graphic existing in the vicinity of a portion where a distance between edges in a desired shape graphic is equal to or less than the specified value as a correction target site; The second to calculate the light intensity value only near the part
A program for causing a computer to execute the procedure (1) and a third procedure for correcting the correction target graphic based on the calculated light intensity value. 10. When a mask pattern is exposed by lithography and the mask pattern, which is a correction target figure, is different from a desired shape, when a proximity effect is automatically corrected, a predetermined value is set. On the basis of the above, based on the first step, it is determined that the side of the correction target figure existing in the vicinity of the location where the distance between the edges of the figure of the desired shape is the specified value or less is the correction target site of the proximity effect; A second procedure for calculating a light intensity value only on a figure of a desired shape within a predetermined range near the site and a third procedure for correcting the correction target figure based on the calculated light intensity value are included. A program that causes a computer to execute.