JP2003236764A - Foam sheet, and fixed abrasive grain foam for polishing - Google Patents

Foam sheet, and fixed abrasive grain foam for polishing

Info

Publication number
JP2003236764A
JP2003236764A JP2002037845A JP2002037845A JP2003236764A JP 2003236764 A JP2003236764 A JP 2003236764A JP 2002037845 A JP2002037845 A JP 2002037845A JP 2002037845 A JP2002037845 A JP 2002037845A JP 2003236764 A JP2003236764 A JP 2003236764A
Authority
JP
Japan
Prior art keywords
polishing
foam
fixed abrasive
abrasive grain
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002037845A
Other languages
Japanese (ja)
Inventor
Yoshinori Masaki
義則 政木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2002037845A priority Critical patent/JP2003236764A/en
Publication of JP2003236764A publication Critical patent/JP2003236764A/en
Pending legal-status Critical Current

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Landscapes

  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fixed abrasive grain foam for polishing having small polishing performance dispersion and high polishing accuracy in a CMP process, easily enlarged in response to extended diameter of a wafer, and largely reducing dressing period. <P>SOLUTION: In the fixed abrasive grain foam for polishing, the cross section in the thickness direction of a foam sheet spirally wound and fixed via a bonding layer 13 having dispersed abrasive grains 15 is set as a polishing surface. An average diameter of air bubbles 14 contained in the foam sheet is not less than 0.1 μm and less than 300 μm, and main material constituting the foam sheet is thermoplastic polyuretane, and the bonding layer is a polyuretane based adhesive made of a curing agent having water solubility and/or water dispersibility. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体、各種メモ
リーハードディスク用基板等の研磨に使用される研磨パ
ッドに関し、その中でも特に層間絶縁膜や金属配線等
の、半導体のデバイスウエハの表面平坦化加工に好適に
用いられる研磨パッドに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing pad used for polishing semiconductors, substrates for various memory hard disks and the like, and in particular, surface flattening of a semiconductor device wafer such as an interlayer insulating film and metal wiring. The present invention relates to a polishing pad that is preferably used in.

【0002】[0002]

【従来の技術】半導体のデバイスウエハの表面平坦化加
工に用いられる、代表的なプロセスである化学的機械的
研磨法(CMP)の一例を図1に示す。定盤(2)、試
料ホルダー(5)を回転させ、砥粒を含有する研磨スラ
リー(4)をスラリー供給用配管(10)を通して滴下
しながら、半導体ウエハ(1)を研磨パッド(6)表面
に押しあてることにより、研磨対象物の表面を高精度に
平坦化するというものである。なお研磨中、ドレッシン
グディスクホルダー(9)を回転させながら、ドレッシ
ングディスク(3)を研磨パッド(6)表面に押しあて
ることにより、研磨パッド(6)の表面状態を整えてい
る。研磨条件はもとより、研磨パッド(6)、ドレッシ
ングディスク(3)、研磨スラリー(4)、バッキング
材(11)およびウエハ固定用治具(8)等、各構成部
材の特性が、研磨速度、研磨後の平坦性および半導体ウ
エハ面内における均一性等に代表される研磨性能に影響
を及ぼすが、その中でも研磨パッド(6)と研磨スラリ
ー(4)および研磨スラリー中に含まれる砥粒の及ぼす
影響は極めて大きい。
2. Description of the Related Art FIG. 1 shows an example of a chemical mechanical polishing (CMP) which is a typical process used for surface flattening of a semiconductor device wafer. While rotating the platen (2) and the sample holder (5) and dropping the polishing slurry (4) containing abrasive grains through the slurry supply pipe (10), the semiconductor wafer (1) is placed on the polishing pad (6) surface. The surface of the object to be polished is flattened with high precision by pressing it against. During polishing, the surface state of the polishing pad (6) is adjusted by pressing the dressing disc (3) against the surface of the polishing pad (6) while rotating the dressing disc holder (9). Not only the polishing conditions, but also the polishing pad (6), the dressing disk (3), the polishing slurry (4), the backing material (11), the wafer fixing jig (8), and other characteristics of each component are the polishing rate and the polishing. The polishing performance represented by the subsequent flatness and the in-plane uniformity of the semiconductor wafer is affected. Among them, the influence of the polishing pad (6) and the polishing slurry (4) and the abrasive grains contained in the polishing slurry is exerted. Is extremely large.

【0003】従来から、研磨パッドは、研磨対象や研磨
精度の要求レベルに応じて、研磨層のみの単層又は研磨
層とクッション層を貼り合わせた積層構造のものが用い
られてきたが、いずれの構造においても、研磨層として
は、大別して、例えばロデール社製のIC1000(商
品名)に代表される独立発泡体、又は砥粒をあらかじめ
研磨層中に分散させた固定砥粒成形体等が使用されてい
る。従来の独立発泡体は、使用前、使用中におけるドレ
ッシング、および研磨の進行に伴う研磨パッド表面の摩
耗により、気泡が開口し、研磨スラリーの保持能力を発
現するというものであった。研磨スラリーの選択の幅が
比較的広く、汎用性が高いという点において標準的に使
用されてきた。ところが、発泡体中において、例えば樹
脂の架橋密度、発泡密度ばらつき等に起因する密度ばら
つきという問題があった。密度ばらつきは、発泡体の研
磨面内のみならず、厚み方向においても存在しうるため
に、従来の独立発泡体は、同一ウエハ面内において、又
は/および加工数量の増加に伴う発泡体自身の摩耗によ
っても研磨性能が変動し、研磨精度がばらつくという問
題を有していた。
Conventionally, as the polishing pad, a single layer having only a polishing layer or a laminated structure having a polishing layer and a cushion layer bonded to each other has been used depending on the object to be polished and the required level of polishing accuracy. In the above structure, the polishing layer is roughly classified into, for example, an independent foamed body represented by IC1000 (trade name) manufactured by Rodel, or a fixed-abrasive molding in which abrasive grains are dispersed in the polishing layer in advance. It is used. In the conventional closed-cell foam, air bubbles are opened due to dressing before and during use, and abrasion of the polishing pad surface as the polishing progresses, so that the polishing slurry retaining ability is exhibited. It has been standardly used because of its relatively wide selection of polishing slurries and its high versatility. However, in the foam, there is a problem that the density varies due to, for example, the cross-linking density of the resin and the variation in the foam density. Since the density variation can exist not only in the polishing surface of the foam but also in the thickness direction, the conventional independent foam has the same foam surface within the same wafer or / and as the number of processing increases. There is a problem in that the polishing performance also varies due to abrasion and the polishing accuracy varies.

【0004】さらには、従来の発泡体は、必ず使用前に
ドレッシングをかけ、気泡を開口させる必要があった
が、従来の独立発泡体を構成するマトリックス樹脂のほ
とんどが、例えば熱硬化性ポリウレタン等に代表され
る、耐摩耗性の高い樹脂であったため、ドレッシングに
長時間を要し、このために研磨工程におけるスループッ
トが低下するという問題があった。一方、固定砥粒成形
体においては、成形する段階で砥粒を混合分散し、あら
かじめ固定してしまうことにより、例えば独立発泡体の
密度ばらつきに起因する研磨性能の変動を抑える効果が
期待できるとされている。研磨パッドの研磨層として固
定砥粒成形体を使用する場合、その目的から基本的にス
ラリーは使用しない、又は砥粒を含まない砥粒レスと呼
ばれているスラリーを使用するが、砥粒入りの研磨スラ
リーを用いる場合と比べて、例えば、砥粒の絶対量が不
足し、研磨レートがでない、又は脱落した砥粒が原因と
なり、加工面にスクラッチと呼ばれるミクロンレベルの
傷が入る等の問題があった。
Further, in the conventional foam, it is necessary to dress the foam before use to open the cells. However, most of the matrix resins constituting the conventional closed foam are made of thermosetting polyurethane or the like. Since it is a resin having high wear resistance as typified by (1), dressing requires a long time, which causes a problem that throughput in the polishing step is reduced. On the other hand, in the fixed-abrasive molding, it is expected that the effect of suppressing the fluctuation of the polishing performance due to the density variation of the independent foam can be expected, for example, by mixing and dispersing the abrasive particles in the molding step and fixing them in advance. Has been done. When using a fixed-abrasive molded body as the polishing layer of the polishing pad, basically no slurry is used for that purpose, or a slurry called abrasive-less that does not contain abrasive particles is used. Compared with the case of using the polishing slurry of, for example, the absolute amount of abrasive grains is insufficient, the polishing rate is not, or due to the abrasive grains that have fallen off, problems such as micron-level scratches called scratches on the processed surface was there.

【0005】エレクトロニクス業界の最近の著しい発展
により、トランジスター、IC、LSI、超LSIと進
化してきている。これら半導体素子における回路の集積
度が急激に増大するにつれて、半導体デバイスのデザイ
ンルールは、年々微細化が進み、デバイス製造プロセス
での焦点深度は浅くなり、パターン形成面の平坦性はま
すます厳しくなってきている。それに伴い、今後、CM
Pに求められる研磨精度もますます高まり、研磨パッド
に要求される研磨性能レベルも併せて高まっていくこと
は必至である。研磨性能レベルの向上とあわせ、さらに
200mmφから300mmφへのウエハ大口径化への
対応も求められており、従来パッドの問題点を克服し、
高精度な研磨を実現できる、さらにはウエハ大口径化に
も対応できる研磨パッドの出現が大望されている。
Due to the recent remarkable development of the electronics industry, it has evolved into transistors, ICs, LSIs and VLSIs. As the degree of integration of circuits in these semiconductor elements has rapidly increased, the design rules of semiconductor devices have become finer year by year, the depth of focus in the device manufacturing process has become shallower, and the flatness of the pattern formation surface has become more and more strict. Is coming. Along with that, CM in the future
It is inevitable that the polishing accuracy required for P will further increase, and the polishing performance level required for the polishing pad will also increase. In addition to improving the polishing performance level, it is also required to cope with the increase in wafer diameter from 200 mmφ to 300 mmφ, overcoming the problems of conventional pads,
There is a great demand for the appearance of a polishing pad that can realize highly accurate polishing and can also accommodate a larger diameter wafer.

【0006】[0006]

【発明が解決しようとする課題】本発明は、従来の独立
発泡体を用いた研磨パッドの、例えば、研磨性能がばら
つく、使用前のドレッシングに長時間を要するといった
問題、又は固定砥粒成形体を用いた研磨パッドの、例え
ば砥粒の脱落等によりキズが入りやすいといった問題を
解決するためのもので、その目的とするところは、研磨
パッドの研磨層として用いた場合において、安定した研
磨精度を発現し、さらにはウエハの大口径化にも対応で
きる研磨用固定砥粒発泡体を提供することにある。
SUMMARY OF THE INVENTION The present invention is directed to a conventional polishing pad using an independent foam, for example, a problem that the polishing performance varies, a long time is required for dressing before use, or a fixed abrasive molding. Of the polishing pad using, for example, to solve the problem that scratches are likely to occur due to the removal of abrasive grains, the purpose is to provide a stable polishing accuracy when used as the polishing layer of the polishing pad. And to provide a fixed abrasive foam for polishing which can cope with an increase in the diameter of a wafer.

【0007】[0007]

【課題を解決するための手段】本発明者らは、前記従来
の問題点を鑑み、鋭意検討を重ねた結果、以下の手段に
より、本発明を完成するに至った。すなわち本発明は、
(1)砥粒が分散された接着層を介して、渦巻き状に巻
かれて固定されてなる発泡シートの厚み方向断面を研磨
面とすることを特徴とする研磨用固定砥粒発泡体、
(2)発泡シートに含まれる気泡の平均径が0.1μm
以上、300μm未満である第(1)項記載の研磨用固
定砥粒発泡体、(3)発泡シートを構成する主原料が、
熱可塑性ポリウレタンである第(1)又は(2)項記載
の研磨用固定砥粒発泡体、(4)接着層が、水溶性およ
び/又は水分散性を有する硬化剤を原料とするポリウレ
タン系接着剤で構成されてなることを特徴とする第
(1)〜(3)項のいずれか1項に記載の研磨用固定砥
粒発泡体、である。
DISCLOSURE OF THE INVENTION The inventors of the present invention have made extensive studies in view of the problems of the prior art, and as a result, have accomplished the present invention by the following means. That is, the present invention is
(1) A fixed abrasive grain foam for polishing, characterized in that a cross section in a thickness direction of a foamed sheet wound and fixed in a spiral shape via an adhesive layer in which abrasive grains are dispersed is a polishing surface.
(2) The average diameter of bubbles contained in the foam sheet is 0.1 μm.
As described above, the fixed abrasive grain foam for polishing according to item (1), which is less than 300 μm, and (3) the main raw material constituting the foam sheet,
Fixed abrasive grain foam for polishing according to item (1) or (2), which is a thermoplastic polyurethane, and (4) a polyurethane-based adhesive whose adhesive layer is made of a water-soluble and / or water-dispersible curing agent as a raw material. The fixed abrasive grain foam for polishing according to any one of items (1) to (3), wherein the fixed abrasive grain foam is for use in polishing.

【0008】[0008]

【発明の実施の形態】本発明の研磨用固定砥粒発泡体に
おいては、発泡シートの厚み方向断面を研磨面とする。
発泡シートを例えばスライス又は切断することにより研
磨面出しを行うが、この方法によれば、厚みを厳密に制
御できる上に、例えばスライス又は切断等を施した段階
で、研磨面内における気泡が開口するため、そのバージ
ン品に対して、研磨前のドレッシングに要する時間は短
くなる、又は全く不必要となるため、研磨工程における
スループットを大幅に向上させることができる。また発
泡シートを渦巻き状に巻くことのメリットとして、発泡
シートの巻き数を調整することにより、所望のサイズの
研磨パッドを製造することができる点が挙げられる。言
い換えれば、半導体ウエハの大口径化に応じて、品質を
変えることなく、製品を大型化することができる。
BEST MODE FOR CARRYING OUT THE INVENTION In the fixed abrasive grain foam for polishing of the present invention, the cross section in the thickness direction of the foamed sheet is the polishing surface.
Polishing surfacing is performed by, for example, slicing or cutting the foamed sheet. According to this method, the thickness can be strictly controlled, and at the stage where, for example, slicing or cutting is performed, bubbles are opened in the polishing surface. Therefore, with respect to the virgin product, the time required for dressing before polishing becomes short or completely unnecessary, so that the throughput in the polishing step can be significantly improved. Further, as a merit of winding the foamed sheet in a spiral shape, it is possible to manufacture a polishing pad of a desired size by adjusting the number of windings of the foamed sheet. In other words, the product can be increased in size without changing the quality according to the increase in the diameter of the semiconductor wafer.

【0009】本発明の研磨用固定砥粒発泡体において
は、発泡シートは接着層を介して固定され、さらには該
接着層中に砥粒が分散されている。気泡と砥粒とが共存
していることから、双方がお互いの欠点を補完する。具
体的には、砥粒は気泡によるスラリーの保持不足および
/又は保持ばらつきを補足し、長時間にわたる、安定し
た研磨性能発現に寄与する。また研磨スラリーによる研
磨方式、いわゆる遊離砥粒方式を採用することにより、
脱落した砥粒による微細なキズの発生等が抑えられる。
発泡シートに含まれる気泡の平均径は特に限定しない
が、好ましくは0.1μm以上、300μm未満、さら
に好ましくは0.5μm以上、200μm未満、最も好
ましくは1.0μm以上、100μm未満である。気泡
の平均径が0.1μm未満であると、例えば研磨スラリ
ー中に含まれる砥粒の凝集物や研磨屑等により目詰まり
し易くなり、短時間で研磨性能が低下する、つまりは、
製品のライフが著しく短くなるので好ましくない。逆に
300μm以上であると、製品の強度が著しく低下する
ので好ましくない。
In the fixed abrasive grain foam for polishing according to the present invention, the foamed sheet is fixed via the adhesive layer, and the abrasive grains are dispersed in the adhesive layer. Since air bubbles and abrasive grains coexist, both complement each other's defects. Specifically, the abrasive grains supplement the lack of retention and / or variation in retention of the slurry due to bubbles, and contribute to the development of stable polishing performance for a long time. Also, by adopting a polishing method using a polishing slurry, a so-called loose abrasive grain method,
The generation of fine scratches due to the removed abrasive grains can be suppressed.
The average diameter of the bubbles contained in the foamed sheet is not particularly limited, but is preferably 0.1 μm or more and less than 300 μm, more preferably 0.5 μm or more and less than 200 μm, and most preferably 1.0 μm or more and less than 100 μm. If the average diameter of the bubbles is less than 0.1 μm, for example, it is likely to be clogged with agglomerates of abrasive grains or polishing debris contained in the polishing slurry, and the polishing performance deteriorates in a short time, that is,
This is not preferable because the life of the product will be significantly shortened. On the other hand, when it is 300 μm or more, the strength of the product is remarkably reduced, which is not preferable.

【0010】本発明の研磨用固定砥粒発泡体に使用する
発泡シートを構成する主原料は特に限定しないが、熱可
塑性ポリウレタン、ポリスチレン、ポリエステル、ポリ
プロピレン、ポリエチレン、ナイロン、ポリ塩化ビニ
ル、ポリ塩化ビニリデン、ポリブテン、ポリアセター
ル、ポリフェニレンオキシド、ポリビニルアルコール、
ポリメチルメタクリレート、ポリカーボネート、ポリア
リレート、芳香族系ポリサルホン、ポリアミド、ポリイ
ミド、フッ素樹脂、エチレン−プロピレン樹脂、エチレ
ン−エチルアクリレート樹脂、アクリル樹脂、ノルボル
ネン系樹脂、例えば、ビニルポリイソプレン−スチレン
共重合体、ブタジエン−スチレン共重合体、アクリロニ
トリル−スチレン共重合体、アクリロニトリル−ブタジ
エン−スチレン共重合体等に代表されるスチレン共重合
体、あるいは天然ゴム、合成ゴム等が好ましい。これら
は単独で用いても良いし、混合あるいは共重合させても
よい。なお耐摩耗性、硬度、圧縮率等を始めとする研磨
適性の面において、非常にバランスが取れているという
点から、熱可塑性ポリウレタンを必須成分とする、つま
り主原料とすることが好ましい。
The main raw material constituting the foamed sheet used for the fixed abrasive grain foam for polishing of the present invention is not particularly limited, but thermoplastic polyurethane, polystyrene, polyester, polypropylene, polyethylene, nylon, polyvinyl chloride, polyvinylidene chloride. , Polybutene, polyacetal, polyphenylene oxide, polyvinyl alcohol,
Polymethyl methacrylate, polycarbonate, polyarylate, aromatic polysulfone, polyamide, polyimide, fluororesin, ethylene-propylene resin, ethylene-ethyl acrylate resin, acrylic resin, norbornene-based resin, for example, vinyl polyisoprene-styrene copolymer, A styrene copolymer typified by a butadiene-styrene copolymer, an acrylonitrile-styrene copolymer, an acrylonitrile-butadiene-styrene copolymer, or a natural rubber or a synthetic rubber is preferable. These may be used alone, or may be mixed or copolymerized. In terms of abrasion resistance, hardness, compressibility, and other polishing suitability, it is preferable to use thermoplastic polyurethane as an essential component, that is, to use it as a main raw material because it is very well balanced.

【0011】本発明の研磨用固定砥粒発泡体中に含まれ
る接着層については特に限定しないが、有機系溶剤を使
用しないため、環境に優しいことは言うに及ばず、親水
性の砥粒をより均質に近い状態で分散させることができ
るという点において、該接着層が、水溶性および/又は
水分散性を有する硬化剤を原料とする、ポリウレタン系
接着剤であることが好ましい。砥粒の添加方法として
は、例えば、該接着剤の主剤と硬化剤を撹拌混合した後
に、砥粒を含有した水溶液を加え、加熱等によりあらか
じめ水分濃度を適性範囲に適宜調整しておき、撹拌しな
がら発泡シート表面に塗布する方法等が挙げられる。
The adhesive layer contained in the fixed abrasive grain foam for polishing of the present invention is not particularly limited, but it is environmentally friendly because it does not use an organic solvent. It is preferable that the adhesive layer is a polyurethane-based adhesive made of a water-soluble and / or water-dispersible curing agent as a raw material, in that the adhesive layer can be dispersed in a more homogeneous state. As a method of adding abrasive grains, for example, after stirring and mixing the main agent of the adhesive and the curing agent, an aqueous solution containing abrasive grains is added, and the water concentration is adjusted beforehand to an appropriate range by heating, etc., and stirred. However, a method of applying to the surface of the foamed sheet may be used.

【0012】なお砥粒については特に限定しないが、加
工対象や要求される研磨精度等によって任意に選択する
ことができる。例えばシリカ系(SiO2)、セリア系
(CeO2)、アルミナ系(Al23)、ジルコニア系
(ZrO2)、およびマンガン系(MnO2、Mn
23)、酸化チタン等をはじめ、ポリメチルメタクリレ
ート、ポリメチルメタクリレートとジビニルベンゼンの
共重合物、およびメラミンホルムアルデヒド縮合物等が
挙げられる。これらは単独あるいは任意に組み合わせて
複数用いることができる。組み合わせや比率等は特に限
定されるものではない。
The abrasive grains are not particularly limited, but can be arbitrarily selected depending on the processing target, required polishing accuracy, and the like. For example, silica-based (SiO 2 ), ceria-based (CeO 2 ), alumina-based (Al 2 O 3 ), zirconia-based (ZrO 2 ), and manganese-based (MnO 2 , Mn).
2 O 3 ), titanium oxide and the like, polymethyl methacrylate, copolymers of polymethyl methacrylate and divinylbenzene, and melamine formaldehyde condensates. These may be used alone or in combination of two or more. The combination, ratio, etc. are not particularly limited.

【0013】本発明の研磨用固定砥粒発泡体を製造する
方法は特に限定しないが、例えば、発泡シート表面にナ
イフコーター等により接着剤を塗布しながら巻き取って
作製した原反を加熱炉中に投入し、接着剤を十分に硬化
させた後、所定の厚みにスライスする方法、又は発泡シ
ートを所定の幅に切断した後に、シート表面に接着剤を
塗布しながら巻き取り、その後、加熱炉中において接着
剤を十分硬化させる方法等が挙げられる。これらの接着
および切断工程は、例えば押出成形に代表される、シー
ト成形工程後に組み入れ、連続的に処理しても良いし、
あるいは発泡シート成形後、一旦ロールに巻き取った原
反を用いて、ロール・ツー・ロール方式で処理しても構
わない。なお本発明の研磨用固定砥粒発泡体を研磨パッ
ドとして使用する場合は、研磨対象物の種類、要求され
る研磨精度等に応じて、単独で使用しても良いし、また
は、例えばロデール社製Suba400のような軟質シ
ートと貼り合わせた形態で使用することもできる。
The method for producing the fixed abrasive grain foam for polishing according to the present invention is not particularly limited, but for example, a raw fabric produced by winding the foamed sheet surface while applying an adhesive with a knife coater or the like in a heating furnace. The method of slicing into a predetermined thickness after the adhesive is sufficiently cured, or after cutting the foamed sheet into a predetermined width, the sheet surface is wound while applying the adhesive, and then the heating furnace The method of fully curing the adhesive may be mentioned. These bonding and cutting steps may be incorporated after the sheet forming step, which is represented by, for example, extrusion molding, and may be continuously processed.
Alternatively, after forming the foamed sheet, a roll-to-roll method may be used by using a roll that is once wound on a roll. When the fixed abrasive foam for polishing of the present invention is used as a polishing pad, it may be used alone depending on the type of object to be polished, required polishing accuracy, or the like, or for example Rodel Co. It can also be used in the form of being attached to a soft sheet such as Suba 400.

【0014】[0014]

【実施例】以下に、実施例により本発明を具体的に説明
するが、本発明は、実施例の内容になんら限定されるも
のではない。 <研磨性能評価>被研磨物として、6インチのシリコン
ウエハ上に、電解メッキで10000ÅのCuを製膜し
たものを準備した。研磨には定盤径600mmの片面研
磨機を用いた。研磨機の定盤には、研磨パッドを両面テ
ープで貼り付け、ダイヤモンド電着ディスクにより研磨
パッド表面をドレッシングしながら、Cabot社製研
磨スラリー(商品名:iCue5003)を流し、1分
間、Cu膜を研磨した。
EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to the contents of the examples. <Evaluation of Polishing Performance> As an object to be polished, a 6-inch silicon wafer on which 10000 Å of Cu was formed by electrolytic plating was prepared. A one-side polishing machine having a platen diameter of 600 mm was used for polishing. A polishing pad was attached to the surface plate of the polishing machine with a double-sided tape, and while polishing the surface of the polishing pad with a diamond electrodeposition disk, polishing slurry (trade name: iCue5003) manufactured by Cabot Co. was flowed for 1 minute to form a Cu film. Polished.

【0015】研磨条件としては、ウエハに加える荷重を
350g/cm2、定盤の回転数を70rpm、ウエハ
回転数を70rpm、研磨スラリーの流量を200ml
/minとした。研磨後のウエハを洗浄、乾燥後、4探
針シート抵抗測定機を用いて、Cu膜厚をウエハ面内で
49点測定し、研磨性能の指標として、平均研磨速度を
算出するとともに、平坦性を従来パッドと比較した。
As the polishing conditions, the load applied to the wafer is 350 g / cm 2 , the rotation number of the surface plate is 70 rpm, the rotation number of the wafer is 70 rpm, and the flow rate of the polishing slurry is 200 ml.
/ Min. After cleaning and drying the wafer after polishing, the Cu film thickness was measured at 49 points on the wafer surface using a 4-probe sheet resistance measuring machine, and the average polishing rate was calculated as an index of polishing performance and the flatness was measured. Was compared with a conventional pad.

【0016】(実施例)二酸化炭素を発泡剤として用い
た押出成形により得られた、熱可塑性ポリウレタンを主
原料とする平均気泡径35μmの発泡シートを巻き取
り、原反を作製した。ロール・ツー・ロール方式によ
り、発泡シート表面に、一次粒子径が0.05μmのシ
リカ粒子を混合したウレタン樹脂接着剤を塗布しながら
巻き取った原反を、乾燥機中に投入、接着剤を十分に硬
化させた後に、スライサーを用いて、厚み2.5mm、
直径600mmφの研磨用固定砥粒発泡体を作製した。
該研磨用固定砥粒発泡体を単独で研磨パッドとして用
い、Cu膜を研磨した。 (比較例)研磨パッドとして、直径600mmφのIC
1000(ロデール社製)を使用し、Cu膜を研磨し
た。
(Example) A foamed sheet obtained by extrusion molding using carbon dioxide as a foaming agent and made of thermoplastic polyurethane as a main raw material and having an average cell diameter of 35 μm was wound to prepare a raw fabric. The roll-to-roll method applies the urethane resin adhesive mixed with silica particles with a primary particle size of 0.05 μm to the surface of the foamed sheet and rolls it up into the dryer. After sufficiently curing, using a slicer, a thickness of 2.5 mm,
A fixed abrasive foam for polishing having a diameter of 600 mmφ was prepared.
The fixed abrasive grain foam for polishing was used alone as a polishing pad to polish a Cu film. (Comparative Example) As a polishing pad, an IC having a diameter of 600 mmφ
The Cu film was polished using 1000 (manufactured by Rodel).

【0017】<評価結果>(実施例)と(比較例)の研
磨性能を比較すると、研磨速度については両者に顕著な
差は見られず、ともに実用に耐え得るレベルであった
が、(実施例)の研磨後の平坦性については(比較例)
よりも良好であった。但し(実施例)については、研磨
前においてドレッシングをかけない、バージン品におけ
る性能評価結果であり、(比較例)において、(実施
例)と同等の研磨速度を得るために、荷重10kPa、
定盤の回転数60rpm、ドレッシングヘッド回転数5
0rpmの条件で2時間のドレッシングを要した。
<Evaluation Results> Comparing the polishing performances of (Example) and (Comparative Example), no significant difference in polishing rate was observed between the two, and both were at a level at which practical use was possible. For example, the flatness after polishing (comparative example)
Was better than. However, (Example) is a performance evaluation result of a virgin product without dressing before polishing. In (Comparative Example), in order to obtain a polishing rate equivalent to that of (Example), a load of 10 kPa,
Plate rotation speed 60 rpm, dressing head rotation speed 5
Two hours of dressing was required at 0 rpm.

【0018】[0018]

【発明の効果】本発明の、発泡シートの厚み方向断面を
研磨面とし、渦巻き状に巻かれた発泡シート間の接着層
中に砥粒が分散されている研磨用固定砥粒発泡体を研磨
層とする研磨パッドによれば、研磨性能ばらつきが低減
し、研磨精度が向上した。さらには研磨性能を低下させ
ることなく、パッドサイズを任意に調整することが可能
となった上、バージン品に対するドレッシング時間の短
縮又はドレッシング工程の省略により、スループットが
著しく向上した。
EFFECTS OF THE INVENTION The fixed abrasive grain foam for polishing in which abrasive grains are dispersed in the adhesive layer between the spirally wound foam sheets of the present invention is used as a polishing surface. With the polishing pad as a layer, variation in polishing performance was reduced and polishing accuracy was improved. Furthermore, the pad size can be arbitrarily adjusted without lowering the polishing performance, and the throughput is remarkably improved by shortening the dressing time for the virgin product or omitting the dressing step.

【図面の簡単な説明】[Brief description of drawings]

【図1】 化学的機械的研磨法(CMP)の標準的なプ
ロセスの一例である。
FIG. 1 is an example of a standard process of chemical mechanical polishing (CMP).

【図2】 本発明の研磨パッドの、研磨面(発泡シート
の厚み方向断面)全体像の一例である。
FIG. 2 is an example of an overall image of a polishing surface (cross section in the thickness direction of a foamed sheet) of a polishing pad of the present invention.

【図3】 本発明の研磨パッドの、研磨面拡大像の一例
である。
FIG. 3 is an example of an enlarged image of a polishing surface of the polishing pad of the present invention.

【符号の説明】[Explanation of symbols]

1 半導体ウエハ 2 定盤 3 ドレッシングディスク 4 研磨スラリー 5 試料ホルダー 6 研磨パッド 7 回転軸 8 ウエハ固定用治具 9 ドレッシングディスクホルダー 10 スラリー供給用配管 11 バッキング材 12 発泡層 13 接着層 14 気泡 15 砥粒 1 Semiconductor wafer 2 surface plate 3 dressing discs 4 Polishing slurry 5 Sample holder 6 polishing pad 7 rotation axis 8 Wafer fixing jig 9 Dressing disc holder 10 Slurry supply pipe 11 Backing material 12 Foam layer 13 Adhesive layer 14 bubbles 15 Abrasive grain

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 砥粒が分散された接着層を介して、渦巻
き状に巻かれて固定されてなる発泡シートの厚み方向断
面を研磨面とすることを特徴とする研磨用固定砥粒発泡
体。
1. A fixed abrasive foam for polishing, wherein a cross section in the thickness direction of a foamed sheet wound and fixed in a spiral shape through an adhesive layer in which abrasive particles are dispersed serves as a polishing surface. .
【請求項2】 発泡シートに含まれる気泡の平均径が
0.1μm以上、300μm未満である請求項1記載の
研磨用固定砥粒発泡体。
2. The fixed abrasive foam for polishing according to claim 1, wherein the average diameter of the bubbles contained in the foamed sheet is 0.1 μm or more and less than 300 μm.
【請求項3】 発泡シートを構成する主原料が、熱可塑
性ポリウレタンである請求項1又は2記載の研磨用固定
砥粒発泡体。
3. The fixed abrasive foam for polishing according to claim 1, wherein the main raw material constituting the foamed sheet is thermoplastic polyurethane.
【請求項4】 接着層が、水溶性および/又は水分散性
を有する硬化剤を原料とするポリウレタン系接着剤で構
成されてなることを特徴とする請求項1〜3のいずれか
1項に記載の研磨用固定砥粒発泡体。
4. The adhesive layer is composed of a polyurethane adhesive made of a water-soluble and / or water-dispersible curing agent as a raw material. Fixed abrasive grain foam for polishing as described.
JP2002037845A 2002-02-15 2002-02-15 Foam sheet, and fixed abrasive grain foam for polishing Pending JP2003236764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002037845A JP2003236764A (en) 2002-02-15 2002-02-15 Foam sheet, and fixed abrasive grain foam for polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002037845A JP2003236764A (en) 2002-02-15 2002-02-15 Foam sheet, and fixed abrasive grain foam for polishing

Publications (1)

Publication Number Publication Date
JP2003236764A true JP2003236764A (en) 2003-08-26

Family

ID=27779318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002037845A Pending JP2003236764A (en) 2002-02-15 2002-02-15 Foam sheet, and fixed abrasive grain foam for polishing

Country Status (1)

Country Link
JP (1) JP2003236764A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005177945A (en) * 2003-12-22 2005-07-07 Toyo Tire & Rubber Co Ltd Polishing pad and polishing method of semiconductor wafer
WO2006072452A1 (en) * 2004-12-30 2006-07-13 Supfina Grieshaber Gmbh & Co .Kg Device ahd method for polishing wafers with abrasive bound in a foamed plastic

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005177945A (en) * 2003-12-22 2005-07-07 Toyo Tire & Rubber Co Ltd Polishing pad and polishing method of semiconductor wafer
JP4606733B2 (en) * 2003-12-22 2011-01-05 東洋ゴム工業株式会社 Polishing pad and semiconductor wafer polishing method
WO2006072452A1 (en) * 2004-12-30 2006-07-13 Supfina Grieshaber Gmbh & Co .Kg Device ahd method for polishing wafers with abrasive bound in a foamed plastic

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