JP2003234488A5 - - Google Patents
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- Publication number
- JP2003234488A5 JP2003234488A5 JP2002031460A JP2002031460A JP2003234488A5 JP 2003234488 A5 JP2003234488 A5 JP 2003234488A5 JP 2002031460 A JP2002031460 A JP 2002031460A JP 2002031460 A JP2002031460 A JP 2002031460A JP 2003234488 A5 JP2003234488 A5 JP 2003234488A5
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion element
- producing
- hole transport
- element according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000006243 chemical reaction Methods 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 20
- 230000005525 hole transport Effects 0.000 claims 14
- 239000013078 crystal Substances 0.000 claims 8
- 239000000463 material Substances 0.000 claims 8
- 239000000126 substance Substances 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- 239000002904 solvent Substances 0.000 claims 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical group CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims 3
- 239000011230 binding agent Substances 0.000 claims 3
- 239000003054 catalyst Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000003112 inhibitor Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 229910001507 metal halide Inorganic materials 0.000 claims 2
- -1 metal halide compound Chemical class 0.000 claims 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical group [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims 1
- 238000009835 boiling Methods 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- JXBPSENIJJPTCI-UHFFFAOYSA-N ethyl cyanate Chemical compound CCOC#N JXBPSENIJJPTCI-UHFFFAOYSA-N 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910001511 metal iodide Inorganic materials 0.000 claims 1
- 150000002825 nitriles Chemical group 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- 239000000088 plastic resin Substances 0.000 claims 1
- 230000001629 suppression Effects 0.000 claims 1
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 1
Claims (20)
該第1の電極と対向して設置され、表面に触媒層を有する第2の電極を形成する工程と、
前記第1の電極と前記第2の電極との間に位置し、その少なくとも一部が多孔質な電子輸送層を形成する工程と、
該電子輸送層と接触する色素層を形成する工程と、
前記電子輸送層と前記第2の電極の表面に形成された触媒層に接して位置してなる正孔輸送層を形成する工程からなる光電変換素子の製造方法であって、
前記正孔輸送層を形成する工程は、正孔輸送材料と前記正孔輸送材料が結晶化する際に結晶サイズが増大するのを抑制する機能を有する結晶サイズ粗大化抑制物質とバインダーとを溶媒に添加した溶液を塗布法により、前記色素層上に塗布して形成するものであることを特徴とする光電変換素子の製造方法。Forming a first electrode;
Forming a second electrode disposed opposite to the first electrode and having a catalyst layer on the surface;
Forming an electron transport layer located between the first electrode and the second electrode, at least a portion of which is porous;
Forming a dye layer in contact with the electron transport layer;
A method for producing a photoelectric conversion element comprising a step of forming a hole transport layer formed in contact with the catalyst layer formed on the surface of the electron transport layer and the second electrode,
The step of forming the hole transport layer includes a hole transport material, a crystal size coarsening inhibitor having a function of suppressing an increase in crystal size when the hole transport material is crystallized, and a binder. A method for producing a photoelectric conversion element, characterized in that the solution added to is coated on the dye layer by a coating method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002031460A JP2003234488A (en) | 2002-02-07 | 2002-02-07 | Method for manufacturing photoelectric transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002031460A JP2003234488A (en) | 2002-02-07 | 2002-02-07 | Method for manufacturing photoelectric transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003234488A JP2003234488A (en) | 2003-08-22 |
JP2003234488A5 true JP2003234488A5 (en) | 2005-08-18 |
Family
ID=27774863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002031460A Withdrawn JP2003234488A (en) | 2002-02-07 | 2002-02-07 | Method for manufacturing photoelectric transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2003234488A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6059166B2 (en) * | 2014-03-14 | 2017-01-11 | 東京応化工業株式会社 | Crystal growth controlling agent, method for forming p-type semiconductor fine particles or p-type semiconductor fine particle film, hole transport layer forming composition, and solar cell |
JP6059167B2 (en) * | 2014-03-14 | 2017-01-11 | 東京応化工業株式会社 | Hole transport layer forming composition and solar cell |
KR101760633B1 (en) * | 2014-03-14 | 2017-07-21 | 도오꾜오까고오교 가부시끼가이샤 | CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL |
-
2002
- 2002-02-07 JP JP2002031460A patent/JP2003234488A/en not_active Withdrawn
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