JP2003234488A5 - - Google Patents

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JP2003234488A5
JP2003234488A5 JP2002031460A JP2002031460A JP2003234488A5 JP 2003234488 A5 JP2003234488 A5 JP 2003234488A5 JP 2002031460 A JP2002031460 A JP 2002031460A JP 2002031460 A JP2002031460 A JP 2002031460A JP 2003234488 A5 JP2003234488 A5 JP 2003234488A5
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Prior art keywords
photoelectric conversion
conversion element
producing
hole transport
element according
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JP2002031460A
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JP2003234488A (en
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Priority to JP2002031460A priority Critical patent/JP2003234488A/en
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Claims (20)

第1の電極を形成する工程と、
該第1の電極と対向して設置され、表面に触媒層を有する第2の電極を形成する工程と、
前記第1の電極と前記第2の電極との間に位置し、その少なくとも一部が多孔質な電子輸送層を形成する工程と、
該電子輸送層と接触する色素層を形成する工程と、
前記電子輸送層と前記第2の電極の表面に形成された触媒層に接して位置してなる正孔輸送層を形成する工程からなる光電変換素子の製造方法であって、
前記正孔輸送層を形成する工程は、正孔輸送材料と前記正孔輸送材料が結晶化する際に結晶サイズが増大するのを抑制する機能を有する結晶サイズ粗大化抑制物質とバインダーとを溶媒に添加した溶液を塗布法により、前記色素層上に塗布して形成するものであることを特徴とする光電変換素子の製造方法。
Forming a first electrode;
Forming a second electrode disposed opposite to the first electrode and having a catalyst layer on the surface;
Forming an electron transport layer located between the first electrode and the second electrode, at least a portion of which is porous;
Forming a dye layer in contact with the electron transport layer;
A method for producing a photoelectric conversion element comprising a step of forming a hole transport layer formed in contact with the catalyst layer formed on the surface of the electron transport layer and the second electrode,
The step of forming the hole transport layer includes a hole transport material, a crystal size coarsening inhibitor having a function of suppressing an increase in crystal size when the hole transport material is crystallized, and a binder. A method for producing a photoelectric conversion element, characterized in that the solution added to is coated on the dye layer by a coating method.
前記結晶サイズ粗大化抑制物質は、前記正孔輸送材料の金属原子に結合させることにより、前記正孔輸送材料が結晶化する際に、結晶サイズが増大するのを抑制する請求項1に記載の光電変換素子の製造方法。  The said crystal size coarsening inhibitory substance suppresses that a crystal size increases when the said hole transport material crystallizes by making it couple | bond with the metal atom of the said hole transport material. A method for producing a photoelectric conversion element. 前記結晶サイズ粗大化抑制物質の前記正孔輸送層材料中の含有量は、1×10-6〜10重量%である請求項1に記載の光電変換素子の製造方法。2. The method for producing a photoelectric conversion element according to claim 1, wherein a content of the crystal size coarsening suppressing substance in the hole transport layer material is 1 × 10 −6 to 10 wt%. 前記結晶サイズ粗大化抑制物質は、硫化物である請求項1ないし3のいずれかに記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to any one of claims 1 to 3, wherein the crystal size coarsening suppression substance is a sulfide. 前記結晶サイズ粗大化抑制物質は、チオシアン酸イオンである請求項1ないし3のいずれかに記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 1, wherein the crystal size coarsening suppressing substance is thiocyanate ion. 前記結晶サイズ粗大化抑制物質は、チオール基である請求項1ないし3のいずれかに記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion device according to claim 1, wherein the crystal size coarsening inhibitor is a thiol group. 前記正孔輸送層は、主としてイオン伝導特性を有する物質で構成される請求項1に記載の光電変換素子の製造方法。  The method for manufacturing a photoelectric conversion element according to claim 1, wherein the hole transport layer is mainly composed of a substance having ion conduction characteristics. 前記イオン伝導特性を有する物質は、ハロゲン化金属化合物である請求項7に記載の光電変換素子の製造方法。  The method for manufacturing a photoelectric conversion element according to claim 7, wherein the substance having ion conduction characteristics is a metal halide compound. 前記ハロゲン化金属化合物は、ヨウ化金属化合物である請求項8に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 8, wherein the metal halide compound is a metal iodide compound. 前記正孔輸送層を形成する工程は、前記色素層を加熱しつつ、前記正孔輸送層材料を前記色素層上に塗布して形成するものである請求項1に記載の光電変換素子の製造方法。  The process for forming the hole transport layer is formed by applying the hole transport layer material on the dye layer while heating the dye layer. Method. 前記正孔輸送層を形成する工程は、前記正孔輸送層材料を前記色素層に塗布して形成する際の前記色素層の加熱温度が、50〜120℃の温度である請求項10に記載の光電変換素子の製造方法。  The heating step of the dye layer when forming the hole transport layer by applying the hole transport layer material to the dye layer is a temperature of 50 to 120 ° C. Manufacturing method of the photoelectric conversion element. 前記バインダーは、可塑性樹脂である請求項1に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 1, wherein the binder is a plastic resin. 前記正孔輸送層は、可塑処理がなされている請求項12に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 12, wherein the hole transport layer is plasticized. 前記バインダーは、シアノ化物である請求項1に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 1, wherein the binder is a cyanide. 前記シアノ化物は、シアノエチル化物である請求項14に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion device according to claim 14, wherein the cyanide is a cyanoethylate. 前記溶媒の沸点は、60〜200℃である請求項1に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 1, wherein the solvent has a boiling point of 60 to 200 ° C. 前記溶媒は、有機溶媒である請求項1に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 1, wherein the solvent is an organic solvent. 前記溶媒は、アセトニトリルである請求項1に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 1, wherein the solvent is acetonitrile. 前記正孔輸送材料は、溶媒の重量に対して、0.05〜2.5重量%添加されてなる溶液である請求項1に記載の光電変換素子の製造方法。  The method for producing a photoelectric conversion element according to claim 1, wherein the hole transport material is a solution in which 0.05 to 2.5 wt% is added to the weight of the solvent. 太陽電池である請求項1ないし19のいずれかに記載の光電変換素子の製造方法。  It is a solar cell, The manufacturing method of the photoelectric conversion element in any one of Claim 1 thru | or 19.
JP2002031460A 2002-02-07 2002-02-07 Method for manufacturing photoelectric transducer Withdrawn JP2003234488A (en)

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JP2002031460A JP2003234488A (en) 2002-02-07 2002-02-07 Method for manufacturing photoelectric transducer

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Application Number Priority Date Filing Date Title
JP2002031460A JP2003234488A (en) 2002-02-07 2002-02-07 Method for manufacturing photoelectric transducer

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JP2003234488A JP2003234488A (en) 2003-08-22
JP2003234488A5 true JP2003234488A5 (en) 2005-08-18

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6059166B2 (en) * 2014-03-14 2017-01-11 東京応化工業株式会社 Crystal growth controlling agent, method for forming p-type semiconductor fine particles or p-type semiconductor fine particle film, hole transport layer forming composition, and solar cell
JP6059167B2 (en) * 2014-03-14 2017-01-11 東京応化工業株式会社 Hole transport layer forming composition and solar cell
KR101760633B1 (en) * 2014-03-14 2017-07-21 도오꾜오까고오교 가부시끼가이샤 CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL

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