JP2003226847A - Method for sticking semiconductor chip - Google Patents
Method for sticking semiconductor chipInfo
- Publication number
- JP2003226847A JP2003226847A JP2002027121A JP2002027121A JP2003226847A JP 2003226847 A JP2003226847 A JP 2003226847A JP 2002027121 A JP2002027121 A JP 2002027121A JP 2002027121 A JP2002027121 A JP 2002027121A JP 2003226847 A JP2003226847 A JP 2003226847A
- Authority
- JP
- Japan
- Prior art keywords
- thermosetting resin
- equation
- semiconductor chip
- temperature history
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は，半導体チップの接
着方法に関し、詳しくは接着剤である熱硬化性樹脂を加
熱・加圧する際の温度履歴を改良した半導体チップの接
着方法に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for adhering a semiconductor chip, and more particularly to a method for adhering a semiconductor chip with improved temperature history when a thermosetting resin as an adhesive is heated and pressed.
【０００２】[0002]
【従来の技術】例えば、回路基板にベアチップのような
半導体チップを実装する際、実装部品の面積と高さを低
減するために、前記ベアチップを基板に熱硬化性樹脂を
用いてで接着する方法が採用されている。2. Description of the Related Art For example, when a semiconductor chip such as a bare chip is mounted on a circuit board, the bare chip is bonded to the substrate by using a thermosetting resin in order to reduce the area and height of mounted components. Has been adopted.
【０００３】このようなベアチップの接着工程では、回
路基板とベアチップの間に熱硬化性樹脂層を介在させ、
このベアチップ上から温度制御した加圧・加熱部材を押
し当て、前記熱硬化性樹脂を加熱して硬化させる。回路
基板とベアチップを接着する熱硬化性樹脂としては、一
般に耐熱性に優れたエポキシ樹脂が用いられ、前記回路
基板上にペーストやフィルムの状態で供給される。前記
加圧・加熱部材は、金属やセラミックスから作られ、任
意の温度履歴を以って熱硬化性樹脂層に与えられる。In such a bare chip bonding process, a thermosetting resin layer is interposed between the circuit board and the bare chip.
A temperature-controlled pressure / heating member is pressed against the bare chip to heat and cure the thermosetting resin. An epoxy resin having excellent heat resistance is generally used as the thermosetting resin for bonding the circuit board and the bare chip, and is supplied in the form of a paste or a film on the circuit board. The pressing / heating member is made of metal or ceramics and given to the thermosetting resin layer with an arbitrary temperature history.
【０００４】前述した加圧・加熱部材による前記熱硬化
性樹脂層の加圧・加熱において、熱硬化性樹脂の粘度は
加熱温度上昇とともに低下するものの、加熱により硬化
反応が進行すると、粘度が上昇する。このとき、基板か
ら発生したガスが熱硬化性樹脂樹脂に取り込まれて、気
泡（ボイド）が発生する。一方，加熱完了時において硬
化反応が不十分になる場合がある。このような熱硬化さ
れた熱硬化性樹脂樹脂層中への気泡の残留および不十分
な硬化反応は、回路基板へのベアチップの接着信頼性を
低下させる。In pressurizing / heating the thermosetting resin layer by the pressurizing / heating member described above, the viscosity of the thermosetting resin decreases as the heating temperature increases, but the viscosity increases as the curing reaction proceeds by heating. To do. At this time, gas generated from the substrate is taken into the thermosetting resin resin, and bubbles (voids) are generated. On the other hand, the curing reaction may become insufficient at the completion of heating. Remaining air bubbles in the thermosetting thermosetting resin resin layer and insufficient curing reaction reduce the adhesion reliability of the bare chip to the circuit board.
【０００５】そこで、従来では加熱開始から一定の時
間、熱硬化性樹脂が流動できる一定の値以下の粘度に抑
え、加熱完了時に熱硬化性樹脂の硬化反応率を一定の値
まで到達させるように前記加圧・加熱部材による温度履
歴を設定していた。Therefore, conventionally, the viscosity is kept below a certain value at which the thermosetting resin can flow for a certain time from the start of heating, and the curing reaction rate of the thermosetting resin reaches a certain value when the heating is completed. The temperature history by the pressurizing / heating member is set.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来の
加圧・加熱部材による温度履歴の設定は試行錯誤的にな
されていたため、組成の異なる熱硬化性樹脂に変更する
場合、前記温度履歴の設定に煩雑な作業が必要になる。
使用している熱硬化性樹脂の硬化時間を短縮化する場合
でも、同様に前記温度履歴の設定に煩雑な作業が必要に
なる。However, since the setting of the temperature history by the conventional pressurizing / heating member has been performed by trial and error, when changing to a thermosetting resin having a different composition, the temperature history is set to the above-mentioned temperature history. Complex work is required.
Even when the curing time of the thermosetting resin used is shortened, similarly, the complicated work is required for setting the temperature history.
【０００７】したがって、従来では温度履歴の設定の変
更毎に煩雑な作業が必要になる。Therefore, conventionally, a complicated work is required every time the setting of the temperature history is changed.
【０００８】本発明は、熱硬化性樹脂の温度履歴設定に
より基板から発生したガスによる熱硬化性樹脂への気泡
の残留を防止するとともに、加熱終了時に所定の値以上
の硬化反応率を確保して基板に対する半導体チップの接
着信頼性を向上でき、かつ前記温度履歴の設定を簡便に
行うことが可能な半導体チップの接着方法を提供しよう
とするものである。According to the present invention, by setting the temperature history of the thermosetting resin, it is possible to prevent bubbles from remaining in the thermosetting resin due to the gas generated from the substrate and to secure a curing reaction rate of a predetermined value or more at the end of heating. It is an object of the present invention to provide a semiconductor chip bonding method capable of improving the reliability of bonding of a semiconductor chip to a substrate and easily setting the temperature history.
【０００９】[0009]
【課題を解決するための手段】本発明に係る半導体チッ
プの接着方法は、基板と半導体チップとの間に熱硬化性
樹脂層を介在し、この熱硬化性樹脂層を加圧・加熱して
硬化させることにより前記基板に前記半導体チップを接
着する方法において、前記熱硬化性樹脂の硬化反応率ｃ
を下記数５に示す式（１）〜（３）で、前記熱硬化性樹
脂の加熱時の粘度ηを下記数６に示す式（６），（７）
で、それぞれ定義し，下記数７に示す式（８）の目的関
数ｆを設定して，多変数目的関数の最小点探索手法でｆ
を最小化することにより下記数７に示す式（９）の変数
ベクトルｘを決定して温度履歴パラメータｑ1，ｑ2，ｑ
3を求め、これらの温度履歴パラメータｑ1，ｑ2，ｑ3を
下記数８に示す式（１０）に代入することにより前記熱
硬化性樹脂の加圧・加熱時の温度履歴Ｔhisを設定する
ことを特徴とするものである。According to the method of bonding a semiconductor chip of the present invention, a thermosetting resin layer is interposed between a substrate and a semiconductor chip, and the thermosetting resin layer is pressed and heated. In the method of bonding the semiconductor chip to the substrate by curing, the curing reaction rate c of the thermosetting resin
Is a formula (1) to (3) shown in the following formula 5, and a viscosity η of the thermosetting resin upon heating is a formula (6), (7) shown in the following formula 6.
Then, the objective function f of the equation (8) shown in the following Equation 7 is set, and f is calculated by the minimum point search method of the multivariable objective function.
To determine the variable vector x of the equation (9) shown in the following equation 7 to minimize the temperature history parameters q 1 , q 2 , and q.
3 is obtained and these temperature history parameters q 1 , q 2 , and q 3 are substituted into the equation (10) shown in the following equation 8 to set the temperature history T his at the time of pressurizing and heating the thermosetting resin. It is characterized by doing.
【００１０】[0010]
【数５】 [Equation 5]
【００１１】[0011]
【数６】 [Equation 6]
【００１２】[0012]
【数７】 [Equation 7]
【００１３】[0013]
【数８】 [Equation 8]
【００１４】[0014]
【発明の実施の形態】以下、本発明を図面を参照して詳
細に説明する。DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in detail below with reference to the drawings.
【００１５】図１は、半導体チップの接着工程を示す断
面図である。FIG. 1 is a sectional view showing a step of adhering a semiconductor chip.
【００１６】まず、図１に示すように基板１とベアチッ
プのような半導体チップ２との間に熱硬化性樹脂層３を
介在する。つづいて、加圧・加熱部材４を前記半導体チ
ップ２に当接させ、前記基板１側に向けて一定の圧力で
加圧しながら、加熱して前記熱硬化性樹脂層３を硬化さ
せることにより前記基板１に前記半導体チップ２を接着
する。First, as shown in FIG. 1, a thermosetting resin layer 3 is interposed between a substrate 1 and a semiconductor chip 2 such as a bare chip. Subsequently, the pressurizing / heating member 4 is brought into contact with the semiconductor chip 2, and the thermosetting resin layer 3 is cured by heating while pressurizing at a constant pressure toward the substrate 1 side. The semiconductor chip 2 is bonded to the substrate 1.
【００１７】前記基板としては、例えば回路基板が用い
られる。A circuit board, for example, is used as the board.
【００１８】前記熱硬化性樹脂としては、例えばエポキ
シ樹脂を挙げることができる。Examples of the thermosetting resin include epoxy resin.
【００１９】前記熱硬化性樹脂層としては、例えば熱硬
化性樹脂ペーストの塗布膜、熱硬化性樹脂のフィルムを
用いることができる。As the thermosetting resin layer, for example, a coating film of thermosetting resin paste or a film of thermosetting resin can be used.
【００２０】なお、前記熱硬化性樹脂層には必要に応じ
て図１に示すようにバンプ５が埋設され、前記基板（回
路基板）１の配線に半導体チップ２がバンプ５を通して
接続される。If necessary, bumps 5 are embedded in the thermosetting resin layer, and the semiconductor chip 2 is connected to the wiring of the substrate (circuit board) 1 through the bumps 5.
【００２１】前述した加圧・加熱部材は、以下の手法で
求めた温度履歴に基づいて温度制御がなされ、前記熱硬
化性樹脂層の加熱を遂行する。The pressure / heating member described above is temperature-controlled based on the temperature history obtained by the following method, and heats the thermosetting resin layer.
【００２２】１）前記熱硬化性樹脂の硬化反応率ｃを下
記数９に示す式（１）〜（３）で、前記熱硬化性樹脂の
加熱時の粘度ηを下記数１０に示す式（６），（７）
で、それぞれ定義する。1) The curing reaction rate c of the thermosetting resin is expressed by the following equations (1) to (3), and the viscosity η of the thermosetting resin when heated is expressed by the following equation (10). 6), (7)
Define each.
【００２３】[0023]
【数９】 [Equation 9]
【００２４】[0024]
【数１０】 [Equation 10]
【００２５】２）下記数１１に示す式（８）の目的関数
ｆを設定して，多変数目的関数の最小点探索手法でｆを
最小化することにより下記数１１に示す式（９）の変数
ベクトルｘを決定して温度履歴パラメータｑ1，ｑ2，ｑ
3を求る。2) The objective function f of the equation (8) shown in the following equation 11 is set, and f is minimized by the minimum point search method of the multivariable objective function. Variable vector x is determined and temperature history parameters q 1 , q 2 , q
Find 3
【００２６】[0026]
【数１１】 [Equation 11]
【００２７】なお、前記式（８）において時間ｔ1、こ
の時間ｔ1での粘度設定値η1、時間ｔ2、およびこの時
間ｔ2での硬化反応率設定値ｃ2は、基板の材料、性状お
よび熱硬化性樹脂の性状に応じて半導体チップの最適接
着設計を達成するために決められ、したがってそれらの
値は任意である。[0027] Incidentally, the equation (8) at time t 1, the viscosity set value eta 1 at this time t 1, the time t 2, and the curing reaction rate setting value c 2 at the time t 2, the material of the substrate , And the properties of the thermosetting resin are determined in order to achieve the optimum adhesive design of the semiconductor chip, and therefore their values are arbitrary.
【００２８】３）前記温度履歴パラメータｑ1，ｑ2，ｑ
3を下記数１２に示す式（１０）に代入することにより
時間ｔ1およびｔ2における熱硬化性樹脂の加圧・加熱時
の温度履歴Ｔhisを求める。3) The temperature history parameters q 1 , q 2 , q
By substituting 3 into the equation (10) shown in the following Expression 12, the temperature history T his during pressurization / heating of the thermosetting resin at times t 1 and t 2 is obtained.
【００２９】[0029]
【数１２】 [Equation 12]
【００３０】４）時間ｔ1における温度履歴Ｔhisを前記
式（７）のＴ（熱硬化樹脂の熱硬化反応過程での時間ｔ
における温度）に代入し、式（６）から粘度η（Ｐａ・
ｓ）、つまりη（ｔ1）を求める。4) The temperature history T his at time t 1 is calculated as T (time t in the thermosetting reaction process of the thermosetting resin) of the above formula (7).
To the viscosity η (Pa ·
s), that is, η (t 1 ) is obtained.
【００３１】また、時間ｔ2における温度履歴Ｔhisを前
記式（２）、（３）のＴ（熱硬化樹脂の熱硬化反応過程
での時間ｔにおける絶対温度）に代入し、式（１）から
硬化反応率ｃ、つまりｃ（ｔ2）を求める。Further, the temperature history T his at time t 2 is substituted into T (absolute temperature at time t in the thermosetting reaction process of the thermosetting resin) of the above equations (2) and (3) to obtain the equation (1). The curing reaction rate c, that is, c (t 2 ) is obtained from the above.
【００３２】次いで、求めた粘度η（ｔ1）および硬化
反応率ｃ（ｔ2）を前記式（８）に代入し，多変数目的
関数の最小点探索手法でｆを最小化することにより前記
式（９）の変数ベクトルｘを決定して温度履歴パラメー
タｑ1，ｑ2，ｑ3を求る。この温度履歴パラメータｑ1，
ｑ2，ｑ3を前記式（１０）に代入することにより時間ｔ
1およびｔ2における熱硬化性樹脂の加圧・加熱時の温度
履歴Ｔhisを求める。Then, the calculated viscosity η (t 1 ) and the curing reaction rate c (t 2 ) are substituted into the above equation (8), and f is minimized by the minimum point search method of the multivariable objective function. The temperature vector parameters q 1 , q 2 , and q 3 are obtained by determining the variable vector x of the equation (9). This temperature history parameter q 1 ,
By substituting q 2 and q 3 into the equation (10), the time t
The temperature history T his at the time of pressurizing and heating the thermosetting resin at 1 and t 2 is calculated .
【００３３】５）前記項目４）の計算を繰り返すアルゴ
リズムにより最終の温度履歴パラメータｑ1，ｑ2，ｑ3
を求め、この温度履歴パラメータｑ1，ｑ2，ｑ3を前記
式（１０）に代入することにより熱硬化性樹脂の加圧・
加熱時の温度履歴Ｔhisを設定する。5) The final temperature history parameters q 1 , q 2 , q 3 are calculated by an algorithm which repeats the calculation of item 4).
And the temperature history parameters q 1 , q 2 , and q 3 are substituted into the equation (10) to apply pressure to the thermosetting resin.
The temperature history T his during heating is set.
【００３４】なお、前記粘度を求める式（６）、（７）
は、下記数１３に示すCastro-Macosco式である式（１
１）に代替可能である。The equations (6) and (7) for obtaining the viscosity are
Is the Castro-Macosco formula (1)
It can be replaced by 1).
【００３５】[0035]
【数１３】 [Equation 13]
【００３６】前記目的関数の式（８）は、下記数１４に
示す一般化した式（１２）に代替可能である。Expression (8) of the objective function can be replaced by generalized expression (12) shown in the following Expression 14.
【００３７】[0037]
【数１４】 [Equation 14]
【００３８】前記温度履歴の式（１０）は、下記数１５
に示す式（１３）に代替可能である。The temperature history equation (10) is expressed by the following equation 15
The equation (13) shown in can be substituted.
【００３９】[0039]
【数１５】 [Equation 15]
【００４０】以上説明したように本発明の実施形態よれ
ば基板と半導体チップとの間に介在した熱硬化性樹脂層
を加圧・加熱して硬化させる際、前記アルゴリズムによ
り求めた温度履歴Ｔhisに基づいて加熱することによっ
て、硬化過程で熱硬化性樹脂の粘度を最適化して基板か
ら発生したガスによる気泡を熱硬化性樹脂の流動により
基板と半導体チップの間から逃散させて熱硬化性樹脂へ
の気泡の残留を防止できる。また、加熱終了時に熱硬化
性樹脂の硬化反応率を所定の値以上に達成させることが
できる。その結果、基板に熱硬化性樹脂を介して半導体
チップを信頼性の高い接着を実現できる。As described above, according to the embodiment of the present invention, when the thermosetting resin layer interposed between the substrate and the semiconductor chip is pressed and heated to be cured, the temperature history T his obtained by the above algorithm is calculated. By heating on the basis of the thermosetting resin, the viscosity of the thermosetting resin is optimized in the curing process, and the bubbles caused by the gas generated from the substrate escape from the space between the substrate and the semiconductor chip by the flow of the thermosetting resin, and the thermosetting resin It is possible to prevent air bubbles from remaining on. In addition, the curing reaction rate of the thermosetting resin can be achieved at a predetermined value or higher at the end of heating. As a result, highly reliable bonding of the semiconductor chip to the substrate via the thermosetting resin can be realized.
【００４１】また、前記温度履歴の設定操作を簡便に行
うことができるため、組成の異なる熱硬化性樹脂への変
更や、使用している熱硬化性樹脂の硬化時間の短縮化等
の設計変更を容易に遂行することができる。Further, since the setting operation of the temperature history can be easily performed, it is possible to change to a thermosetting resin having a different composition, or to change the design such as shortening the curing time of the thermosetting resin used. Can be easily accomplished.
【００４２】[0042]
【実施例】以下、本発明の実施例を説明する。EXAMPLES Examples of the present invention will be described below.
【００４３】熱硬化性樹脂としてエポキシ樹脂を用い、
前記式（８）の目的関数ｆにおいて，ｔ1を２０ｓ，η1
を１０８Ｐａ・ｓ，ｔ2を１８０ｓ，ｃ2を０．９５と設
定した。このような設定の下で前述したアルゴリズム
（修正Ｐｏｗｅｌｌ法）に従って前記式（８）のｆを最
小化することにより、前記式（９）の変数ベクトルｘを
決定して下記表１に示す前記エポキシ樹脂における温度
履歴のパラメータｑ1，ｑ2，ｑ3を求めた。An epoxy resin is used as the thermosetting resin,
In the objective function f of the equation (8), t 1 is 20 s, η 1
Was set to 10 8 Pa · s, t 2 was set to 180 s, and c 2 was set to 0.95. Under such a setting, the variable vector x of the formula (9) is determined by minimizing f of the formula (8) according to the algorithm (modified Powell method) described above, and the epoxy shown in the following table 1 is determined. Parameters q 1 , q 2 , and q 3 of the temperature history of the resin were obtained.
【００４４】[0044]
【表１】 [Table 1]
【００４５】求めた温度履歴のパラメータｑ1，ｑ2，ｑ
3および適切な時間ｔを前記式（１０）に代入すること
により、図２に示すエポキシ樹脂の加圧・加熱時の温度
履歴（温度プロファイル）を設定した。なお、温度履歴
Ｔhisの設定に際し、初期温度Ｔ0を２０℃とした。Parameters of the obtained temperature history q 1 , q 2 , q
By substituting 3 and an appropriate time t into the above formula (10), the temperature history (temperature profile) at the time of pressurization / heating of the epoxy resin shown in FIG. 2 was set. When setting the temperature history T his , the initial temperature T 0 was set to 20 ° C.
【００４６】得られた温度履歴に基づいて前述した図１
に示す加圧・加熱部材４の温度制御を行って、基板１と
ベアチップ２との間に介在させたエポキシ樹脂層（熱硬
化性樹脂層）３を硬化させた。このときの硬化反応率変
化を図３に、粘度変化を図４にそれぞれ示す。FIG. 1 described above based on the obtained temperature history
By controlling the temperature of the pressurizing / heating member 4 shown in (4), the epoxy resin layer (thermosetting resin layer) 3 interposed between the substrate 1 and the bare chip 2 was cured. Changes in the curing reaction rate at this time are shown in FIG. 3, and changes in the viscosity are shown in FIG.
【００４７】図３から明らかなように最適化した温度履
歴で基板１とベアチップ２との間に介在させたエポキシ
樹脂層（熱硬化性樹脂層）３を硬化させることによっ
て、９５％と高い硬化反応率を達成できることがわか
る。このため、基板１に対するベアチップ２の高い接着
信頼性を確保できた。As is clear from FIG. 3, by curing the epoxy resin layer (thermosetting resin layer) 3 interposed between the substrate 1 and the bare chip 2 with an optimized temperature history, a high curing rate of 95% is achieved. It can be seen that the reaction rate can be achieved. Therefore, high adhesion reliability of the bare chip 2 to the substrate 1 can be secured.
【００４８】また、図４から明らかなように最適化した
温度履歴で基板１とベアチップ２との間に介在させたエ
ポキシ樹脂層（熱硬化性樹脂層）３を硬化させることに
よって、２０ｓでの粘度を１０８Ｐａ・ｓ以下に抑えて
適切に流動性させることができるため、エポキシ樹脂層
中のボイドを速やかに逃散させることができた。Further, as is apparent from FIG. 4, the epoxy resin layer (thermosetting resin layer) 3 interposed between the substrate 1 and the bare chip 2 is cured with the optimized temperature history, so that the temperature is maintained for 20 seconds. Since the viscosity can be suppressed to 10 8 Pa · s or less and the fluidity can be appropriately obtained, the voids in the epoxy resin layer can be quickly escaped.
【００４９】[0049]
【発明の効果】以上詳述したように本発明によれば、熱
硬化性樹脂の温度履歴設定により基板から発生したガス
による熱硬化性樹脂への気泡の残留を防止できるととも
に、加熱終了時に所定の値以上の硬化反応率を確保して
基板に対する半導体チップの接着信頼性を向上でき、か
つ前記温度履歴の設定を簡便に行うことができ、ひいて
は組成の異なる熱硬化性樹脂への変更や、使用している
熱硬化性樹脂の硬化時間の短縮化等の設計変更を容易に
遂行することが可能な半導体チップの接着方法を提供す
ることができる。As described above in detail, according to the present invention, it is possible to prevent bubbles from remaining in the thermosetting resin due to the gas generated from the substrate by setting the temperature history of the thermosetting resin, and to set a predetermined value at the end of heating. It is possible to improve the reliability of adhesion of the semiconductor chip to the substrate by ensuring a curing reaction rate of the value of or more, and it is possible to easily set the temperature history, and then change to a thermosetting resin having a different composition, It is possible to provide a method of bonding a semiconductor chip that can easily carry out design changes such as shortening of the curing time of the thermosetting resin used.
【図１】本発明の半導体チップの接着工程を示す断面図FIG. 1 is a cross-sectional view showing a bonding process of a semiconductor chip of the present invention.
【図２】本発明の実施例における最適化した温度履歴を
示すグラフ。FIG. 2 is a graph showing an optimized temperature history in the example of the present invention.
【図３】本発明の実施例における最適化した温度履歴に
よるエポキシ樹脂の硬化反応率変化を示すグラフ。FIG. 3 is a graph showing changes in the curing reaction rate of the epoxy resin according to the optimized temperature history in the example of the present invention.
【図４】本発明の実施例における最適化した温度履歴に
よるエポキシ樹脂の粘度変化を示すグラフ。FIG. 4 is a graph showing a change in viscosity of an epoxy resin according to an optimized temperature history in an example of the present invention.
１…基板、 ２…半導体チップ（ベアチップ）、 ３…熱硬化性樹脂層（エポキシ樹脂層）、 ４…加圧・加熱部材。 1 ... substrate, 2 ... Semiconductor chip (bare chip), 3 ... Thermosetting resin layer (epoxy resin layer), 4 ... Pressure / heating member.
Claims (4)
脂層を介在し、この熱硬化性樹脂層を加圧・加熱して硬
化させることにより前記基板に前記半導体チップを接着
する方法において、 前記熱硬化性樹脂の硬化反応率ｃを下記数１に示す式
（１）〜（３）で、前記熱硬化性樹脂の加熱時の粘度η
を下記数２に示す式（６），（７）で、それぞれ定義
し，下記数３に示す式（８）の目的関数ｆを設定して，
多変数目的関数の最小点探索手法でｆを最小化すること
により下記数３に示す式（９）の変数ベクトルｘを決定
して温度履歴パラメータｑ1，ｑ2，ｑ3を求め、これら
の温度履歴パラメータｑ1，ｑ2，ｑ3を下記数４に示す
式（１０）に代入することにより前記熱硬化性樹脂の加
圧・加熱時の温度履歴Ｔhisを設定することを特徴とす
る半導体チップの接着方法。 【数１】 【数２】 【数３】 【数４】 1. A method for adhering the semiconductor chip to the substrate by interposing a thermosetting resin layer between the substrate and the semiconductor chip, and pressing and heating the thermosetting resin layer to cure the thermosetting resin layer. The curing reaction rate c of the thermosetting resin is expressed by the following equations (1) to (3), and the viscosity η of the thermosetting resin when heated is
Are defined by equations (6) and (7) shown in the following equation 2, and the objective function f of the equation (8) shown in the following equation 3 is set,
The temperature history parameters q 1 , q 2 , q 3 are obtained by determining the variable vector x of the equation (9) shown in the following Expression 3 by minimizing f by the minimum point search method of the multivariable objective function. The temperature history T his at the time of pressurizing and heating the thermosetting resin is set by substituting the temperature history parameters q 1 , q 2 , and q 3 into the equation (10) shown in the following Expression 4. Bonding method for semiconductor chips. [Equation 1] [Equation 2] [Equation 3] [Equation 4]
ることを特徴とする請求項１記載の半導体チップの接着
方法。2. The method for adhering a semiconductor chip according to claim 1, wherein the thermosetting resin is an epoxy resin.
履歴に基づいて温度制御がなされる加圧・加熱部材を用
いて行なわれることを特徴とする請求項１または２記載
の半導体チップの接着方法。3. The semiconductor chip according to claim 1, wherein the heating of the thermosetting resin layer is performed by using a pressing / heating member whose temperature is controlled based on the temperature history. Adhesion method.
されていることを特徴とする請求項１ないし３いずれか
記載の半導体チップの接着方法。4. The method for adhering a semiconductor chip according to claim 1, wherein bumps are embedded in the thermosetting resin layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027121A JP2003226847A (en) | 2002-02-04 | 2002-02-04 | Method for sticking semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027121A JP2003226847A (en) | 2002-02-04 | 2002-02-04 | Method for sticking semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003226847A true JP2003226847A (en) | 2003-08-15 |
Family
ID=27748742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002027121A Pending JP2003226847A (en) | 2002-02-04 | 2002-02-04 | Method for sticking semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003226847A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006265411A (en) * | 2005-03-24 | 2006-10-05 | Sekisui Chem Co Ltd | Adhesive in sheet form or paste form, method for producing electronic component device and electronic component device |
| JP2014211363A (en) * | 2013-04-18 | 2014-11-13 | ナミックス株式会社 | Viscosity behavior prediction method of thermosetting resin, simulation software, manufacturing method of thermosetting resin, and underfill manufactured by this manufacturing method |
| US10658329B2 (en) * | 2013-07-08 | 2020-05-19 | Sony Corporation | Method of determining curing conditions, method of producing circuit device and circuit device |
-
2002
- 2002-02-04 JP JP2002027121A patent/JP2003226847A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006265411A (en) * | 2005-03-24 | 2006-10-05 | Sekisui Chem Co Ltd | Adhesive in sheet form or paste form, method for producing electronic component device and electronic component device |
| JP2014211363A (en) * | 2013-04-18 | 2014-11-13 | ナミックス株式会社 | Viscosity behavior prediction method of thermosetting resin, simulation software, manufacturing method of thermosetting resin, and underfill manufactured by this manufacturing method |
| US10658329B2 (en) * | 2013-07-08 | 2020-05-19 | Sony Corporation | Method of determining curing conditions, method of producing circuit device and circuit device |
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