JP2003211276A - Method and device of laser beam machining - Google Patents

Method and device of laser beam machining

Info

Publication number
JP2003211276A
JP2003211276A JP2002012829A JP2002012829A JP2003211276A JP 2003211276 A JP2003211276 A JP 2003211276A JP 2002012829 A JP2002012829 A JP 2002012829A JP 2002012829 A JP2002012829 A JP 2002012829A JP 2003211276 A JP2003211276 A JP 2003211276A
Authority
JP
Japan
Prior art keywords
laser beam
laser
processing
hole
optical path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002012829A
Other languages
Japanese (ja)
Other versions
JP3715242B2 (en
Inventor
Kazumasa Nojima
和正 野島
Keiji Iso
圭二 礒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP2002012829A priority Critical patent/JP3715242B2/en
Publication of JP2003211276A publication Critical patent/JP2003211276A/en
Application granted granted Critical
Publication of JP3715242B2 publication Critical patent/JP3715242B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Laser Beam Processing (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of laser beam machining by which a resign part is machined by eliminating the thermal influence of the machining of a metallic layer and the machining time is shortened at the same time, thus both the quality and the time efficiency are improved. <P>SOLUTION: A laser beam on a first optical path is divided into a second and a third optical paths and the laser beam which advances on the second optical path is made incident on a first part to be machined at which a metallic film is tightly stuck on the surface of a resin member, and a hole is formed on the metallic film of the first part to be machined. The first part to be machined is moved to a position at which a laser beam which advances on the third optical path is made incident, and a second part to be machined at which the metallic film is tightly stuck on the surface of the resign member is arranged at a position at which the laser beam which advances on the second optical path is made incident. A hole is formed on the resin member by making the laser beam which advances on the third optical path incident on a region in which the resin member is exposed on the first part to be machined, and at the same time a hole is formed on the metallic film of the second part to be machined by making the laser beam which advances on the second optical path incident on the second part to be machined. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明はレーザビームを用い
た加工方法及び加工装置に関する。
TECHNICAL FIELD The present invention relates to a processing method and a processing apparatus using a laser beam.

【0002】[0002]

【従来の技術】図5(A)〜(C)を参照し、2層の金
属層を有する基板(2メタル基板)の従来の加工方法を
説明する。図5(A)は2メタル基板の概略を表す断面
図である。たとえばポリイミドでつくられた樹脂層51
の表面に銅層52、内部に銅で形成された電極層53が
配された2メタル基板を紫外パルスレーザビーム54で
加工する。
2. Description of the Related Art A conventional method of processing a substrate having two metal layers (two-metal substrate) will be described with reference to FIGS. FIG. 5A is a cross-sectional view showing the outline of a two-metal substrate. For example, a resin layer 51 made of polyimide
A two-metal substrate having a copper layer 52 on its surface and an electrode layer 53 formed of copper inside is processed by an ultraviolet pulse laser beam 54.

【0003】図5(B)に示すように、紫外パルスレー
ザビーム54を銅層52に照射し、樹脂層51を露出さ
せる穴52aをあける。
As shown in FIG. 5B, an ultraviolet pulsed laser beam 54 is irradiated on the copper layer 52 to form a hole 52a exposing the resin layer 51.

【0004】図5(C)に示すように、この穴52aの
穿孔に続けて紫外パルスレーザビーム54のパルスエネ
ルギを小さくし、樹脂層51に電極層53に至る穴51
aを穿つ。
As shown in FIG. 5C, following the perforation of the hole 52a, the pulse energy of the ultraviolet pulse laser beam 54 is reduced, and the hole 51 reaching the resin layer 51 to the electrode layer 53 is formed.
pierce a.

【0005】[0005]

【発明が解決しようとする課題】しかし従来の方法によ
ると高品質の加工は困難である。
However, according to the conventional methods, high quality processing is difficult.

【0006】図5(D)を参照して説明する。銅層52
と樹脂層51の加工を連続して行うため、銅層52の加
工時に樹脂層51まで伝わった熱及び樹脂層51の加工
時に銅層52に残存する熱が影響して、アンダーカット
51b等の欠陥が生じやすくなる。したがって、実際に
樹脂層51に穿たれるのは穴51a'のように、穴52
aの周辺直下の樹脂層51が損傷し、側面が膨らみを有
する穴になる。また、単に銅層52加工時の熱が散逸す
るのを待てば、基板加工の時間効率が悪化する。
Description will be made with reference to FIG. Copper layer 52
And the resin layer 51 are continuously processed, the heat transferred to the resin layer 51 during the processing of the copper layer 52 and the heat remaining in the copper layer 52 during the processing of the resin layer 51 affect the undercut 51b and the like. Defects are likely to occur. Therefore, the holes 52a 'are actually formed in the resin layer 51 like the holes 51a'.
The resin layer 51 immediately below the periphery of a is damaged, and the side surface becomes a hole having a bulge. Further, simply waiting for heat to be dissipated during processing of the copper layer 52 deteriorates the time efficiency of processing the substrate.

【0007】本発明の目的は金属層加工時の熱の影響を
排除して樹脂部の加工を行い、しかも加工時間を短縮す
る、すなわち品質と時間効率をともに向上させるレーザ
加工方法及びレーザ加工装置を提供することである。
An object of the present invention is to process a resin part by eliminating the influence of heat when processing a metal layer, and to shorten the processing time, that is, to improve both quality and time efficiency. Is to provide.

【0008】[0008]

【課題を解決するための手段】本発明の一観点によれ
ば、第1のレーザ光路から分岐した第2及び第3のレー
ザ光路のうち、第2のレーザ光路に沿って進行するレー
ザビームを、樹脂部材の表面上に金属膜が密着した第1
の被加工部に入射させて、該第1の被加工部の金属膜に
穴を形成する工程と、前記第1の被加工部を、前記第3
のレーザ光路に沿って進行するレーザビームの入射可能
位置まで移動させるとともに、樹脂部材の表面上に金属
膜が密着した第2の被加工部を、前記第2のレーザ光路
に沿って進行するレーザビームの入射可能位置に配置す
る工程と、前記第1の被加工部の樹脂部材が露出した領
域に、前記第3のレーザ光路に沿って進行するレーザビ
ームを入射させ、該樹脂部材に穴を形成すると同時に、
前記第2の被加工部に、前記第2のレーザ光路に沿って
進行するレーザビームを入射させて、該第2の被加工部
の金属膜に穴を形成する工程とを有するレーザ加工方法
が提供される。
According to one aspect of the present invention, a laser beam that travels along a second laser optical path of the second and third laser optical paths branched from the first laser optical path is provided. First, the metal film adheres to the surface of the resin member
To form a hole in the metal film of the first processed part, and the first processed part is formed into the third processed part.
Of the laser beam traveling along the second laser optical path while moving to the position where the laser beam traveling along the laser optical path can enter, and the second processed portion in which the metal film is in close contact with the surface of the resin member. A step of arranging the beam at a position where the beam can enter, and a laser beam traveling along the third laser optical path is made incident on a region of the first processed portion where the resin member is exposed to form a hole in the resin member. At the same time forming
A step of causing a laser beam traveling along the second laser optical path to enter into the second processed portion to form a hole in the metal film of the second processed portion. Provided.

【0009】前記第1の被加工部は、前記第2のレーザ
光路に沿って進行するレーザビームにより前記金属膜を
加工されてから、前記第3のレーザ光路に沿って進行す
るレーザビームによって前記樹脂部分を加工されるまで
の移送期間に、金属膜加工時の熱を散逸する。したがっ
て前記レーザ加工方法は、良質の加工を提供することが
できる。また、該第1の被加工部の樹脂部分に穴を形成
すると同時に前記第2の被加工部の金属膜に穴を形成す
るので、加工時間を短縮することができる。
In the first processed portion, the metal film is processed by the laser beam traveling along the second laser optical path, and then the metal film is produced by the laser beam traveling along the third laser optical path. Heat is dissipated during metal film processing during the transfer period until the resin part is processed. Therefore, the laser processing method can provide high-quality processing. Further, since the holes are formed in the resin portion of the first processed portion and the holes are formed in the metal film of the second processed portion at the same time, the processing time can be shortened.

【0010】本発明の別の観点によれば、パルスレーザ
ビームを出射するレーザ光源と、該レーザ光源から出射
された該パルスレーザビームを第1のパルスレーザビー
ムと第2のパルスレーザビームとに分けかつそのパワー
比を変えることができる光学手段を含み、更に該第1の
パルスレーザビームを第1の加工領域内の点に、該第2
のパルスレーザビームを第2の加工領域内の点に入射さ
せる光学系と、前記第1の加工領域において前記第1の
パルスレーザビームを走査させる第1の走査手段と、前
記第2の加工領域において前記第2のパルスレーザビー
ムを走査させる第2の走査手段と、前記第1の加工領域
において加工された加工対象物を、前記第2の加工領域
に移動させる移動手段とを有するレーザ加工装置が提供
される。
According to another aspect of the present invention, a laser light source for emitting a pulse laser beam, and the pulse laser beam emitted from the laser light source are used as a first pulse laser beam and a second pulse laser beam. An optical means capable of splitting and changing its power ratio, further comprising the first pulsed laser beam at a point in the first processing region,
System for making the pulsed laser beam of the laser beam incident on a point in the second processing region, first scanning means for scanning the first pulsed laser beam in the first processing region, and the second processing region. A laser processing apparatus having: a second scanning means for scanning the second pulsed laser beam; and a moving means for moving a processing object processed in the first processing area to the second processing area. Will be provided.

【0011】該レーザ加工装置は、前記第1の加工領域
で加工された加工対象物を移動手段により移動させ、前
記第2の加工領域で更に加工する。加工を二つの段階に
分け、そこに時間間隔を設けることによって、前記加工
対象物が前記第1の加工領域における加工で受けた熱影
響を排除することができる。したがって良質の加工を実
現することが可能となる。また、前記第1の加工領域に
おける加工と前記第2の加工領域における加工とを同時
に行うことができるため、一つの加工領域で異なる種類
の加工を施す場合に比し、加工時間の短縮が実現され
る。
The laser processing apparatus moves the processing object processed in the first processing area by moving means and further processes it in the second processing area. By dividing the machining into two stages and providing a time interval there, it is possible to eliminate the thermal influence of the machining target on the machining in the first machining region. Therefore, it becomes possible to realize high-quality processing. Further, since the processing in the first processing area and the processing in the second processing area can be performed at the same time, the processing time can be shortened as compared with the case where different types of processing are performed in one processing area. To be done.

【0012】[0012]

【発明の実施の形態】図1に本発明の実施例によるレー
ザ加工装置の概略図を示す。レーザ発振器10からパル
スレーザビームが出射される。レーザ発振器10は、た
とえばNd:YAGレーザである。パルスレーザビーム
がマスク11に入射し、マスク11に設けられた貫通孔
を通過してEOM(electric optical modulator)1
2に入射する。偏光板13が互いにエネルギの異なる二
つのパルスレーザビーム、すなわち反射パルスレーザビ
ームと透過パルスレーザビームとに分ける。反射パルス
レーザビームはガルバノスキャナ15に、透過パルスレ
ーザビームは反射ミラー14で反射されてガルバノスキ
ャナ17に向かう。
1 is a schematic view of a laser processing apparatus according to an embodiment of the present invention. A pulse laser beam is emitted from the laser oscillator 10. The laser oscillator 10 is, for example, an Nd: YAG laser. The pulsed laser beam is incident on the mask 11, passes through a through hole provided in the mask 11, and passes through an EOM (electric optical modulator) 1
Incident on 2. The polarizing plate 13 divides into two pulsed laser beams having different energies, that is, a reflected pulsed laser beam and a transmitted pulsed laser beam. The reflected pulsed laser beam is reflected by the galvano scanner 15, and the transmitted pulsed laser beam is reflected by the reflection mirror 14 to the galvano scanner 17.

【0013】EOM12はたとえばLiTaO3もしく
はLiNbO3等を用いたポッケルス素子により構成さ
れている。ポッケルス素子は、印加される電界に応じて
その内部を通過する光の偏光方向を変化させる。偏光板
13は入射する光の偏光方向に応じて、偏光板13にお
ける反射光と透過光の強度の割合を変化させる。したが
ってEOM12と偏光板13とにより、ガルバノスキャ
ナ15に入射するパルスレーザビームとガルバノスキャ
ナ17に入射するパルスレーザビームとの強度の割合を
調整することが可能である。
The EOM 12 is composed of a Pockels element using, for example, LiTaO 3 or LiNbO 3 . The Pockels element changes the polarization direction of light passing through it according to an applied electric field. The polarizing plate 13 changes the ratio of the intensity of the reflected light and the transmitted light in the polarizing plate 13 according to the polarization direction of the incident light. Therefore, it is possible to adjust the ratio of the intensities of the pulse laser beam incident on the galvano scanner 15 and the pulse laser beam incident on the galvano scanner 17 by the EOM 12 and the polarizing plate 13.

【0014】ガルバノスキャナ15及びガルバノスキャ
ナ17は一対の揺動可能な反射鏡を含んで構成され、パ
ルスレーザビームを2次元方向に走査する。ガルバノス
キャナ15で走査されたパルスレーザビームはfθレン
ズ16を透過してTAB(tape automated bonding)
用テープ20に入射し加工を行う。ガルバノスキャナ1
7で走査されたパルスレーザビームはfθレンズ18を
透過してTAB用テープ20に入射し加工を行う。ガル
バノスキャナ15及び17の加工領域はTAB用テープ
20の長さ方向(矢印30方向)にある長さをもち、幅
方向(TAB用テープ20上において矢印30方向と交
差する方向)にある幅をもつ。fθレンズ16及びfθ
レンズ18はマスク11の貫通孔をTAB用テープ20
の表面に結像させる。ロール機構19はTAB用テープ
20を矢印30方向に移動させる。
The galvano scanner 15 and the galvano scanner 17 are constituted by including a pair of swingable reflecting mirrors, and scan the pulsed laser beam in a two-dimensional direction. The pulsed laser beam scanned by the galvano scanner 15 passes through the fθ lens 16 and TAB (tape automated bonding).
It is incident on the tape 20 for processing and is processed. Galvano scanner 1
The pulsed laser beam scanned at 7 passes through the fθ lens 18 and enters the TAB tape 20 for processing. The processing areas of the galvano scanners 15 and 17 have a length in the length direction of the TAB tape 20 (direction of arrow 30) and a width in the width direction (direction crossing the direction of arrow 30 on the TAB tape 20). Hold. fθ lens 16 and fθ
The lens 18 has a through hole of the mask 11 and a tape 20 for TAB
Image on the surface of. The roll mechanism 19 moves the TAB tape 20 in the direction of arrow 30.

【0015】図2に示すように、加工対象物、ここでは
TAB用テープ20の長さ方向に、単位加工領域X
(1)、X(2)、・・・X(i)、X(i+1)、・
・・がこの順番に配列しており、隣り合う単位加工領域
X(i)とX(i+1)とは相互に接している。単位加
工領域とはロール機構19によりTAB用テープ20を
移動させることなく、ガルバノスキャナ15または17
による走査のみで加工が可能な、TAB用テープ20上
のまとまった領域をいう。各単位加工領域にはn個の被
加工部が分布する。すなわち単位加工領域X(i)内に
は被加工部ai1、a i2、・・・、ainが配置されてい
る。パルスレーザビームはガルバノスキャナで走査さ
れ、該ガルバノスキャナの加工領域に進入した単位加工
領域に配置されているn個の被加工部に入射する。な
お、単位加工領域によって被加工部の数nは異なっても
よい。
As shown in FIG. 2, an object to be processed, here,
A unit processing area X is formed in the length direction of the TAB tape 20.
(1), X (2), ... X (i), X (i + 1),
.. are arranged in this order, and adjacent unit processing areas
X (i) and X (i + 1) are in contact with each other. Unit addition
The work area is the TAB tape 20 by the roll mechanism 19.
Galvano scanner 15 or 17 without moving
On the TAB tape 20 that can be processed only by scanning with
Refers to a cohesive area. Each unit processing area has n
Processed parts are distributed. That is, within the unit processing area X (i)
Is a processed part ai1, A i2,, ainIs located
It The pulsed laser beam is scanned by a galvano scanner.
Unit processing that entered the processing area of the galvano scanner
It is incident on n processed parts arranged in the region. Na
Even if the number n of processed parts differs depending on the unit processing area,
Good.

【0016】図3(A)はガルバノスキャナ15の加工
領域に単位加工領域X(1)が進入し、ガルバノスキャ
ナ15で走査されるパルスレーザビームにより、被加工
部a 11〜a1nが第1段階の加工を施される様子を示す。
この第1段階の加工が終了すると、TAB用テープ20
がロール機構19により矢印30方向に送られ、ガルバ
ノスキャナ15の加工領域には単位加工領域X(2)が
進入する。
FIG. 3A shows the processing of the galvano scanner 15.
The unit machining area X (1) enters the area and the galvano scan
Processed by the pulsed laser beam scanned by
Part a 11~ A1nShows the state of being subjected to the first stage processing.
When this first stage processing is completed, the TAB tape 20
Is sent in the direction of arrow 30 by the roll mechanism 19 and
The unit processing area X (2) is provided in the processing area of the scanner unit 15.
enter in.

【0017】図3(B)はガルバノスキャナ15の加工
領域に単位加工領域X(2)が進入し、ガルバノスキャ
ナ15で走査されるパルスレーザビームにより、被加工
部a 21〜a2nが第1段階の加工を施される様子を示す。
この第1段階の加工が終了すると、TAB用テープ20
がロール機構19により矢印30方向に送られ、ガルバ
ノスキャナ15の加工領域には単位加工領域X(3)が
進入する。以下同様である。
FIG. 3B shows the processing of the galvano scanner 15.
The unit machining area X (2) enters the area and the galvano scan
Processed by the pulsed laser beam scanned by
Part a twenty one~ A2nShows the state of being subjected to the first stage processing.
When this first stage processing is completed, the TAB tape 20
Is sent in the direction of arrow 30 by the roll mechanism 19 and
In the processing area of the scanner unit 15, the unit processing area X (3) is
enter in. The same applies hereinafter.

【0018】図3(C)はガルバノスキャナ15の加工
領域に単位加工領域X(i)が進入し、ガルバノスキャ
ナ15で走査されるパルスレーザビームにより、被加工
部a i1〜ainが第1段階の加工を施される様子を示す。
これと同時にガルバノスキャナ17の加工領域には単位
加工領域X(1)が進入し、ガルバノスキャナ17で走
査されるパルスレーザビームにより、被加工部a11〜a
1nが第2段階の加工を施される。単位加工領域X
(i)、X(1)の加工がともに終了すると、TAB用
テープ20がロール機構19により矢印30方向に送ら
れる。
FIG. 3C shows the processing of the galvano scanner 15.
The unit machining area X (i) enters the area and the galvano scan
Processed by the pulsed laser beam scanned by
Part a i1~ AinShows the state of being subjected to the first stage processing.
At the same time, the processing area of the galvano scanner 17 has a unit
Processing area X (1) enters and runs with galvano scanner 17.
By the pulsed laser beam to be inspected, the processed part a11~ A
1nIs subjected to the second stage processing. Unit processing area X
When both (i) and X (1) are finished, for TAB
The tape 20 is sent in the direction of arrow 30 by the roll mechanism 19.
Be done.

【0019】図3(D)は、図3(C)の示す加工に続
いて、ガルバノスキャナ15の加工領域に単位加工領域
X(i+1)が進入し、これと同時にガルバノスキャナ
17の加工領域に単位加工領域X(2)が進入した様子
を表す。被加工部ai+1,1〜部ai+1,nがガルバノスキャ
ナ15で走査されるパルスレーザビームにより、第1段
階の加工を施される。これと同時に、被加工部a21〜a
2nがガルバノスキャナ17で走査されるパルスレーザビ
ームにより、第2段階の加工を施される。
In FIG. 3D, following the machining shown in FIG. 3C, the unit machining area X (i + 1) enters the machining area of the galvano scanner 15 and, at the same time, enters the machining area of the galvano scanner 17. The state where the unit processing area X (2) has entered is shown. The first part of processing is carried out by the pulse laser beam scanned by the galvano scanner 15 on the parts a i + 1,1 to a i + 1, n . At the same time, the processed parts a 21 to a
2n is processed by the pulse laser beam scanned by the galvano scanner 17.

【0020】図4(A)、(B)を参照し、実施例によ
るレーザ加工方法について説明を続ける。加工対象物は
TAB用テープ20で、ポリイミド等の樹脂製のベース
フィルム40の両面に、それぞれ銅層41及び銅層42
が接着されている。ベースフィルム40の厚さはたとえ
ば25〜50μmであり、銅層41及び銅層42の厚さ
はたとえば9〜18μmである。
With reference to FIGS. 4A and 4B, description will be continued on the laser processing method according to the embodiment. The object to be processed is the TAB tape 20, and the copper layer 41 and the copper layer 42 are formed on both surfaces of the base film 40 made of a resin such as polyimide.
Are glued together. The thickness of the base film 40 is, for example, 25 to 50 μm, and the thickness of the copper layer 41 and the copper layer 42 is, for example, 9 to 18 μm.

【0021】図4(A)は、図3に示したガルバノスキ
ャナ15で走査されたパルスレーザビーム43を、TA
B用テープ20上の被加工部a1iの銅層41に入射さ
せ、銅層41を貫通する穴41aを形成する様子を表
す。これが前述した第1段階の加工である。穴41aの
形成にはたとえば銅層表面に約20J/cm2のパルス
エネルギ密度を与えるパルスレーザビームが必要であ
る。ロール機構19が、すでに穴41aを穿たれ、穴4
1aの底にベースフィルム40が露出しているTAB用
テープ20上の被加工部a1iを、ガルバノスキャナ17
の加工領域に運ぶ。その間に穴41a加工時の熱が散逸
し、穴41a近辺が冷却される。
In FIG. 4A, the pulse laser beam 43 scanned by the galvano scanner 15 shown in FIG.
This shows a state in which a hole 41 a penetrating the copper layer 41 is formed by making the copper layer 41 of the processed portion a 1i on the B tape 20 incident. This is the first stage processing described above. The formation of the holes 41a requires, for example, a pulsed laser beam that gives a pulse energy density of about 20 J / cm 2 to the surface of the copper layer. The roll mechanism 19 has already punched the hole 41a,
The processed portion a 1i on the TAB tape 20 where the base film 40 is exposed at the bottom of the la 1a is attached to the galvano scanner 17
To the processing area. During that time, the heat at the time of processing the hole 41a is dissipated, and the vicinity of the hole 41a is cooled.

【0022】図4(B)は、図3に示したガルバノスキ
ャナ17で走査されたパルスレーザビーム44を、被加
工部a1iのベースフィルム40に入射させ、ベースフィ
ルム40を貫通する穴40aを形成する様子を表す。こ
れが前述した第2段階の加工である。この穴40aの形
成にはたとえばベースフィルム40に約2J/cm2
パルスエネルギ密度を与えるパルスレーザビームが必要
である。
In FIG. 4B, the pulse laser beam 44 scanned by the galvano scanner 17 shown in FIG. 3 is made incident on the base film 40 of the processed portion a 1i , and a hole 40a penetrating the base film 40 is formed. It shows how it is formed. This is the above-described second stage processing. The formation of the holes 40a requires, for example, a pulse laser beam which gives the base film 40 a pulse energy density of about 2 J / cm 2 .

【0023】このように銅層41の加工とベースフィル
ム40の加工との間に時間間隔を設けることによって、
良質の加工を実現できる。またガルバノスキャナ17に
よる被加工部a1iのベースフィルム40の加工時、ガル
バノスキャナ15の加工領域では被加工部aijの銅層4
1が加工されていることは、図3(C)を参照しながら
先に述べた。したがって加工時間の短縮も実現されるこ
とになる。
By thus providing a time interval between the processing of the copper layer 41 and the processing of the base film 40,
Good quality processing can be realized. Further, when the base film 40 of the processed portion a 1i is processed by the galvano scanner 17, the copper layer 4 of the processed portion a ij is processed in the processing area of the galvano scanner 15.
That No. 1 has been processed was described above with reference to FIG. Therefore, the processing time can be shortened.

【0024】加工の時間効率を向上させるために、EO
M12及び偏光板13によってパルスレーザビームを適
切にパワー配分することが好ましい。銅層41の加工に
パワーの70%以上を分配する。最適例のひとつとし
て、レーザ発振器10にNd:YAGレーザを用い、パ
ルスレーザビームの波長355nm(3倍高調波)、パ
ルス幅50nsec、パルス周波数10kHz、出力1
0Wの場合を考える。穴径50μmの穴を開けるとする
と、銅層41の加工に90%、ベースフィルム40の加
工に10%のパワーを分割することにより、厚さ12μ
mの銅層41、厚さ25μmのベースフィルム40にと
もに15ショットの照射で、穴を貫通させることができ
る。このとき銅層41に入射するパルスレーザビームの
パルスエネルギ密度は約20J/cm2、ベースフィル
ム40に入射するパルスレーザビームのパルスエネルギ
密度は約2J/cm2である。この最適例においては、
図3(C)で示したガルバノミラー17の加工領域で被
加工部a1iのベースフィルム40が加工されると同時
に、ガルバノミラー15の加工領域では被加工部aii
銅層41が加工されることになる。
In order to improve the time efficiency of processing, EO
It is preferable to appropriately distribute the power of the pulsed laser beam by the M12 and the polarizing plate 13. 70% or more of the power is distributed to the processing of the copper layer 41. As one of the optimum examples, an Nd: YAG laser is used for the laser oscillator 10, the wavelength of the pulsed laser beam is 355 nm (third harmonic), the pulse width is 50 nsec, the pulse frequency is 10 kHz, and the output is 1.
Consider the case of 0W. If a hole with a hole diameter of 50 μm is drilled, the power is divided into 90% for processing the copper layer 41 and 10% for processing the base film 40, resulting in a thickness of 12 μm.
The copper layer 41 of m and the base film 40 of 25 μm in thickness can be penetrated through the holes by irradiation of 15 shots. At this time, the pulse energy density of the pulse laser beam incident on the copper layer 41 is about 20 J / cm 2 , and the pulse energy density of the pulse laser beam incident on the base film 40 is about 2 J / cm 2 . In this optimal example,
In the processing area of the galvano mirror 17 shown in FIG. 3C, the base film 40 of the processed portion a 1i is processed, and at the same time, in the processed area of the galvano mirror 15, the copper layer 41 of the processed portion a ii is processed. Will be.

【0025】なお実際の加工においては、予め計算され
た分割比の周辺で微調整を行うことになる。
In the actual processing, fine adjustment is performed around the division ratio calculated in advance.

【0026】また、用いるパルスレーザビームの波長は
600nm以下のものが望ましい。波長が600nmを
超える場合、銅箔に対する吸収率が10%以下となり、
銅層の加工が困難となるためである。
The wavelength of the pulse laser beam used is preferably 600 nm or less. If the wavelength exceeds 600 nm, the absorption rate for the copper foil will be 10% or less,
This is because it becomes difficult to process the copper layer.

【0027】ここではマスク11の貫通孔をTAB用テ
ープ20の表面に結像させるマスクイメージング光学系
の実施例をあげたが、これが焦点レンズを用いてTAB
用テープ20上にパルスレーザビームの焦点を結ばせる
集光光学系であっても、事情は全く同じである。
Here, an example of a mask imaging optical system for forming an image of the through hole of the mask 11 on the surface of the TAB tape 20 is described. This is a TAB using a focusing lens.
Even if it is a condensing optical system that can focus the pulse laser beam on the tape for use 20, the situation is exactly the same.

【0028】また、加工対象物がTAB用テープ20で
はなくXYステージに載った基板であっても、ステージ
のストロークを長くとれば同様に良質で時間効率のよい
加工を行うことができる。
Even when the object to be processed is not the TAB tape 20 but the substrate mounted on the XY stage, the quality and time-efficient processing can be similarly performed by lengthening the stroke of the stage.

【0029】更にまた、パルス発振器10から出射され
たパルスレーザビームを分ける光学手段にビームスプリ
ッタを用いることも考えられる。
Furthermore, it is conceivable to use a beam splitter as an optical means for dividing the pulse laser beam emitted from the pulse oscillator 10.

【0030】以上、本発明の実施例について例示した
が、その他、種々の変更、改良、組み合わせ等が可能で
あることは当業者には自明であろう。
Although the embodiments of the present invention have been illustrated above, it will be apparent to those skilled in the art that various modifications, improvements, combinations and the like can be made.

【0031】[0031]

【発明の効果】以上説明したように、本発明によれば、
金属層加工時に蓄積された熱の影響を排除して樹脂部の
加工を行い、しかも加工時間を短縮することができる。
これにより樹脂部材上に金属層が密着した加工対象物の
加工において、品質と時間効率をともに向上させること
ができる。
As described above, according to the present invention,
The resin portion can be processed by eliminating the influence of heat accumulated during processing of the metal layer, and the processing time can be shortened.
As a result, both quality and time efficiency can be improved in the processing of the processing object in which the metal layer is in close contact with the resin member.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例によるレーザ加工装置の概略図
である。
FIG. 1 is a schematic view of a laser processing apparatus according to an embodiment of the present invention.

【図2】TAB用テープの単位加工領域及び被加工部を
形式的に表した図である。
FIG. 2 is a diagram formally showing a unit processing area and a processed portion of a TAB tape.

【図3】(A)〜(D)は本発明の実施例によるレーザ
加工方法を説明するための図である。
3A to 3D are views for explaining a laser processing method according to an embodiment of the present invention.

【図4】(A)及び(B)は本発明の実施例によるレー
ザ加工方法を説明するためのTAB用テープの断面図で
ある。
4A and 4B are cross-sectional views of a TAB tape for explaining a laser processing method according to an embodiment of the present invention.

【図5】(A)〜(D)は従来の2メタル基板の加工方
法を説明するための2メタル基板断面図である。
5A to 5D are sectional views of a 2-metal substrate for explaining a conventional method for processing a 2-metal substrate.

【符号の説明】[Explanation of symbols]

X(i) 単位加工領域 aij 被加工部 10 レーザ発振器 11 マスク 12 EOM 13 偏光板 14 反射ミラー 15 ガルバノスキャナ 16 fθレンズ 17 ガルバノスキャナ 18 fθレンズ 19 ロール機構 20 TAB用テープ 30 矢印 40 ベースフィルム 40a 穴 41、42 銅層 41a 穴 43、44 パルスレーザビーム 51 樹脂層 51a、51a' 穴 51b アンダーカット 52 銅層 52a 穴 53 電極層 54 紫外パルスレーザビームX (i) Unit processing area a ij Work piece 10 Laser oscillator 11 Mask 12 EOM 13 Polarizing plate 14 Reflecting mirror 15 Galvano scanner 16 fθ lens 17 Galvano scanner 18 fθ lens 19 Roll mechanism 20 TAB tape 30 Arrow 40 Base film 40a Hole 41, 42 Copper layer 41a Hole 43, 44 Pulse laser beam 51 Resin layer 51a, 51a 'Hole 51b Undercut 52 Copper layer 52a Hole 53 Electrode layer 54 Ultraviolet pulse laser beam

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 第1のレーザ光路から分岐した第2及び
第3のレーザ光路のうち、第2のレーザ光路に沿って進
行するレーザビームを、樹脂部材の表面上に金属膜が密
着した第1の被加工部に入射させて、該第1の被加工部
の金属膜に穴を形成する工程と、 前記第1の被加工部を、前記第3のレーザ光路に沿って
進行するレーザビームの入射可能位置まで移動させると
ともに、樹脂部材の表面上に金属膜が密着した第2の被
加工部を、前記第2のレーザ光路に沿って進行するレー
ザビームの入射可能位置に配置する工程と、 前記第1の被加工部の樹脂部材が露出した領域に、前記
第3のレーザ光路に沿って進行するレーザビームを入射
させ、該樹脂部材に穴を形成すると同時に、前記第2の
被加工部に、前記第2のレーザ光路に沿って進行するレ
ーザビームを入射させて、該第2の被加工部の金属膜に
穴を形成する工程とを有するレーザ加工方法。
1. A laser beam propagating along a second laser light path of a second and a third laser light path branched from a first laser light path, in which a metal film adheres to a surface of a resin member. A step of forming a hole in the metal film of the first processed portion by making it incident on the first processed portion; and a laser beam that advances the first processed portion along the third laser optical path. And a second processed portion in which the metal film is in close contact with the surface of the resin member is arranged at a position where a laser beam advancing along the second laser optical path can be incident. A laser beam that travels along the third laser optical path is incident on a region of the first processed portion where the resin member is exposed to form a hole in the resin member, and at the same time, the second processed portion is formed. Part along the second laser optical path By the incidence of the laser beam, the laser processing method and a step of forming a hole in the metal film of the processed portion of the second.
【請求項2】 更に、前記第1の被加工部の金属膜を貫
通する穴が形成される時間と、該第1の被加工部の樹脂
部分を貫通する穴が形成される時間との差が、前記第2
のレーザ光路を進むレーザビームと前記第3のレーザ光
路を進むレーザビームとのパワーが等しい時に、前記金
属膜を貫通する穴が形成される時間と、前記樹脂部分を
貫通する穴が形成される時間との差よりも短くなるよう
に、前記第1のレーザ光路を進むレーザビームを第2及
び第3のレーザ光路を進むレーザビームに分岐させる工
程を含む請求項1に記載のレーザ加工方法。
2. The difference between the time for forming a hole that penetrates the metal film of the first processed portion and the time for forming a hole that penetrates the resin portion of the first processed portion. But the second
When the power of the laser beam traveling through the laser optical path and the power of the laser beam traveling through the third laser optical path are the same, the time for which the hole that penetrates the metal film is formed and the hole that penetrates the resin portion is formed. The laser processing method according to claim 1, further comprising a step of branching the laser beam traveling along the first laser optical path into laser beams traveling along the second and third laser optical paths so as to be shorter than a difference with time.
【請求項3】 前記第1の被加工部と前記第2の被加工
部とは、1本のテープ状加工対象物の異なる部分である
請求項1または請求項2に記載のレーザ加工方法。
3. The laser processing method according to claim 1, wherein the first processed portion and the second processed portion are different portions of one tape-shaped processing target object.
【請求項4】 前記第1及び第2の被加工部の金属膜に
形成する穴が該金属膜を貫通する穴であり、前記第3の
レーザ光路に沿って進行するレーザビームを該穴の底面
に露出した前記樹脂部材に入射させる請求項1〜3のい
ずれかに記載のレーザ加工方法。
4. The hole formed in the metal film of the first and second processed portions is a hole penetrating the metal film, and a laser beam traveling along the third laser optical path is formed in the hole. 4. The laser processing method according to claim 1, wherein the resin member is exposed on the bottom surface.
【請求項5】 前記第1のレーザ光路を進むレーザビー
ムのパワーの70%以上が前記第2のレーザ光路に入射
する請求項1〜4のいずれかに記載のレーザ加工方法。
5. The laser processing method according to claim 1, wherein 70% or more of the power of the laser beam traveling along the first laser optical path is incident on the second laser optical path.
【請求項6】 前記レーザビームの波長が600nm以
下である請求項1〜5のいずれかに記載のレーザ加工方
法。
6. The laser processing method according to claim 1, wherein the wavelength of the laser beam is 600 nm or less.
【請求項7】 パルスレーザビームを出射するレーザ光
源と、 該レーザ光源から出射された該パルスレーザビームを第
1のパルスレーザビームと第2のパルスレーザビームと
に分ける光学手段を含み、かつ該第1のパルスレーザビ
ームを第1の加工領域内の点に、該第2のパルスレーザ
ビームを第2の加工領域内の点に入射させる光学系と、 前記第1の加工領域において前記第1のパルスレーザビ
ームを走査させる第1の走査手段と、 前記第2の加工領域において前記第2のパルスレーザビ
ームを走査させる第2の走査手段と、 前記第1の加工領域において加工された加工対象物を、
前記第2の加工領域に移動させる移動手段とを有するレ
ーザ加工装置。
7. A laser light source for emitting a pulsed laser beam, and optical means for dividing the pulsed laser beam emitted from the laser light source into a first pulsed laser beam and a second pulsed laser beam, and An optical system for making the first pulsed laser beam incident on a point in the first processing region and the second pulsed laser beam incident on a point in the second processing region; and the first processing region in the first processing region. Scanning means for scanning the pulse laser beam of No. 1, second scanning means for scanning the second pulse laser beam in the second processing area, and a processing target processed in the first processing area. Things,
A laser processing apparatus comprising: a moving unit that moves the second processing region.
【請求項8】 前記光学手段が、前記第1のパルスレー
ザビームと前記第2のパルスレーザビームとのパワー比
を変えることができる請求項7に記載のレーザ加工装
置。
8. The laser processing apparatus according to claim 7, wherein the optical unit is capable of changing the power ratio between the first pulse laser beam and the second pulse laser beam.
【請求項9】 前記レーザ光源が600nm以下の波長
のレーザビームを出射する請求項7または請求項8に記
載のレーザ加工装置。
9. The laser processing apparatus according to claim 7, wherein the laser light source emits a laser beam having a wavelength of 600 nm or less.
JP2002012829A 2002-01-22 2002-01-22 Laser processing method and laser processing apparatus Expired - Fee Related JP3715242B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008238261A (en) * 2007-03-29 2008-10-09 Sumitomo Heavy Ind Ltd Laser beam irradiation apparatus and method
CN102441739A (en) * 2010-09-30 2012-05-09 三星钻石工业股份有限公司 Laser processing apparatus, processing method of processed products and dividing method of processed products
KR101462132B1 (en) * 2008-03-18 2014-11-17 일렉트로 사이언티픽 인더스트리즈, 아이엔씨 Processing of multilayer semiconductor wafers

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102658425A (en) * 2012-04-24 2012-09-12 北京中鼎高科自动化技术有限公司 Online continuous laser processing device of adhesive products with more than one layer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11277273A (en) * 1998-03-30 1999-10-12 Sumitomo Heavy Ind Ltd Laser beam drill and laser beam drilling method
JP2000107875A (en) * 1998-10-02 2000-04-18 Mitsubishi Electric Corp Device for irradiating laser beam
JP2001313471A (en) * 2000-02-24 2001-11-09 Matsushita Electric Works Ltd Method for forming viahole of wiring board
JP2002232150A (en) * 2001-02-06 2002-08-16 Toppan Printing Co Ltd Laser-boring machine for multilayer printed wiring board

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11277273A (en) * 1998-03-30 1999-10-12 Sumitomo Heavy Ind Ltd Laser beam drill and laser beam drilling method
JP2000107875A (en) * 1998-10-02 2000-04-18 Mitsubishi Electric Corp Device for irradiating laser beam
JP2001313471A (en) * 2000-02-24 2001-11-09 Matsushita Electric Works Ltd Method for forming viahole of wiring board
JP2002232150A (en) * 2001-02-06 2002-08-16 Toppan Printing Co Ltd Laser-boring machine for multilayer printed wiring board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008238261A (en) * 2007-03-29 2008-10-09 Sumitomo Heavy Ind Ltd Laser beam irradiation apparatus and method
KR101462132B1 (en) * 2008-03-18 2014-11-17 일렉트로 사이언티픽 인더스트리즈, 아이엔씨 Processing of multilayer semiconductor wafers
CN102441739A (en) * 2010-09-30 2012-05-09 三星钻石工业股份有限公司 Laser processing apparatus, processing method of processed products and dividing method of processed products

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