JP2003202306A - Total reflection fluorescent x-ray analysis method and apparatus having configuration using sample substrate and reflector for achieving multiple total reflection and convergence of x rays - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a total reflection fluorescent X-ray analysis method and a total reflection fluorescent X-ray analysis apparatus where a detection limit is improved. <P>SOLUTION: The total reflection fluorescent X-ray analysis apparatus includes a primary X-ray intensity increase means. The primary X-ray intensity increase means has a rotary stage R.S and a reflector Re. The rotary stage R.S has X-ray irradiation angle adjustment equipment Z-S for adjusting an angle (θ) between an X ray X-rb from a primary X-ray generation source and a sample substrate S.P. The reflector Re cooperates with a sample substrate mount placement rest S.P.S that is mounted to the upper section of the rotary stage and a sample substrate, is subjected to multiple total reflection, is converged, increases X-ray intensity, can be adjusted to an appropriate angle that is less than 1° of an angle where irradiation can be made by a glancing angle, and at the same time is arranged at an interval where the converged X ray passes for irradiating the section to be analyzed. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a total reflection X-ray fluorescence analysis method having an improved detection limit and a total reflection X-ray fluorescence analyzer for the method.

[0002]

2. Description of the Related Art A total reflection X-ray fluorescence analysis method is known as a powerful tool for surface analysis of contaminants existing near an object surface, for example, a Si wafer. Total reflection X-ray fluorescence (T) by Yoneda and Horuchi
XRF) proposed [Y.Yoneda and T.Horiuchi,
Rev. Sci. Instrum. 42, 1069 (1971)], many researchers have been considering obtaining an analyzer having an improved detection limit of TXRF. What is important to improve the detection limit is (1) first, to increase the X-ray intensity for analysis. Therefore, how to irradiate the analyzed part without changing the X-ray intensity at the source. Whether or not the X-ray intensity is increased, and (2) if the background X-ray fluorescence intensity, which is noise, is decreased, the detection limit can be relatively reduced. Is how to reduce.

In order to improve the TXRF intensity, of course, it is effective to use a synchrotron generator that generates energy suitable for analysis and use a more powerful primary X-ray source, but the device becomes large. There is a problem in terms of cost and the like. In the micro XRF, an X-ray capillary optical system, such as an X-ray polycapillary, which has a taper in the traveling direction of the X-ray and totally reflects the X-ray on the inner surface, is used. Then, a method of obtaining a strong microfocus X-ray and irradiating it on the surface to be analyzed for analysis is known. In the capillary optical system, the primary X-rays are totally reflected on the inner surface of the capillary optical system and converged in a micron-order region. However, such means cannot be applied to the analysis of surface analysis of contaminants existing near the Si wafer, for example, where it is necessary to observe a relatively wide area to be analyzed at one time.

On the other hand, Cheburkin and Shotyk
Instead of using a collimator composed of two reflectors, one of the reflectors was composed of a sample substrate.
Consisting of a single reflector and a reflector that doubles as a sample substrate,
Simplified T using double-plate sample holder
An XRF analyzer is proposed. The double-pla
The te sample substrate has two mirror-finished surfaces with different lengths.
For example, it is composed of a glass slide or a crystal plate. The sample is placed on a long plate, the other plate is placed just above the long plate, and the double-plate sample holder acts as a monochromator and a collimator, so that a space having the function is held. Are arranged as follows. The space between both plates is, for example, about 50 μm. As a result, compared with a TXRF analyzer that combines a monochromator composed of two reflectors and an optical device having a collimator function, which is arranged separately from the sample holder, it can be used by incorporating it into conventional XRF. Yes, and ICP
100-200 picograms (p
It has been reported that construction of a TXRF analyzer with the detection limit of g) is possible (Reference: AK Cheburkin an).
d W. Shotyk, X-Ray Spectrom. 25,175 (1996).).

In any case, in the above TXRF analyzer, the two plates are mounted in parallel and the distance between the two plates is fixed. Therefore, it is not possible to utilize the technical means of improving the detection limit by increasing the X-ray intensity of the analyzer.

[0006]

SUMMARY OF THE INVENTION Therefore, the object of the present invention is to solve the technical problems that cannot be achieved by the above-mentioned prior art, and to provide a TXRF analysis method with improved detection limit and an apparatus for carrying out the method. It is to be. The present inventors have found that if the primary X-ray is focused on the analysis position under the condition of total internal reflection, the TXRF intensity is improved, and the background can be reduced by the optimum X-ray irradiation angle.
We thought that the detection limit could be lowered.
Then, in order to realize this, it was thought that it would be obtained by adjusting the angle and the interval of the two plates to the optimum arrangement. For this reason, the present inventor tilts the reflection plate with respect to the sample substrate so that the angle between the sample substrate and the reflection plate arranged to face the sample substrate can be changed to the optimum arrangement. The method of holding the reflector was devised so that Further, the above-mentioned problem is solved by devising a holding method that allows relative positioning of the reflector plate and the sample substrate so that the primary X-rays captured between the reflector plate and the sample substrate can be converged to the analysis position by the multiple reflection effect. We were able to.

[0007]

The first aspect of the present invention is to provide a primary X
A sample substrate having a line reflection characteristic, X-rays from a primary X-ray source are collaborated with the sample substrate on the analyzed portion of the sample substrate by multiple total reflection to converge and increase the X-ray intensity. The primary X-ray reflection that can be adjusted to an optimum angle less than 1 °, which is the angle at which the grounding angle can be radiated, and that is arranged with an interval to pass the converged X-rays and irradiate the analyzed part It is a total reflection fluorescent X-ray analysis method characterized by using a total reflection type fluorescent X-ray analysis device configured to include a plate. Preferably, a sample substrate having primary X-ray reflection characteristics is provided, and X-rays from the primary X-ray source are converged on the sample substrate by multiple total reflection in cooperation with the sample substrate to the analyzed portion of the sample substrate. The angle can be adjusted to an optimum angle of less than 1 °, which is the angle at which the intensity can be increased and the grazing angle can be radiated, and it is arranged with a space for radiating the analyzed portion through which converged X-rays pass. The X-ray from the primary X-ray source is desired in cooperation with the adjustment so that the configuration for adjusting the optimum angle to the reflecting plate and the interval for the converged X-rays to pass through and to irradiate the analyzed portion are maintained. Of the sample substrate having a rotating stage capable of changing the angle between the X-ray from the primary X-ray source and the sample substrate so as to irradiate the analyzed portion of the sample substrate with high intensity and a glancing angle. A total reflection type X-ray fluorescence analyzer including a mounting table is used. It is an X-ray fluorescence analysis method, and more preferably, the sample substrate holding part of the mounting table can be moved back and forth and left and right on the holding part plane, can be adjusted to an optimum angle, and converged X-rays can pass through. Then, the entire surface of the sample substrate can be analyzed by the relative movement with the movement in the forward / backward and left / right directions while keeping the optimum angle and the distance between the reflectors arranged with an interval for irradiating the analyzed part. The above total reflection X-ray fluorescence analysis method is characterized by using the total reflection X-ray fluorescence analyzer described above, and more preferably, the primary X-ray reflection plate is a silicon wafer or a flat quartz glass plate. In each of the above-mentioned total reflection X-ray fluorescence analysis methods, the sample substrate is a wafer.

The second aspect of the present invention is, in a total reflection X-ray fluorescence analyzer, X-rays from a primary X-ray source are subjected to multiple total reflection in an analyzed portion of the sample substrate in cooperation with the sample substrate. The angle between both plates is adjusted to an optimum angle of less than 1 ° so that the X-ray intensity can be converged to increase the X-ray intensity and can be irradiated at the glancing angle, and the converged X-ray passes and irradiates the analyzed portion. An X-ray reflection plate equipped with a device for maintaining a distance is provided, and a total reflection X-ray fluorescence analyzer. Preferably primary X
A rotary stage equipped with an angle adjuster for adjusting the angle formed by the X-ray from the X-ray source and the sample substrate, and multiplex in cooperation with the sample substrate mounting table mounted on the rotary stage and the sample substrate. It can be adjusted to an optimum angle of less than 1 ° of the angle at which the glancing angle can be irradiated by total reflection and convergence to increase the X-ray intensity, and the converged X-rays irradiate the analyzed part. A primary X-ray intensity increase equipped with a device for maintaining the interval, adjusting the reflector to the optimum angle, and maintaining the interval for passing the converged X-rays and irradiating the analyzed part, and The above-mentioned total-reflection X-ray fluorescence analyzer equipped with an irradiation angle adjusting device, and more preferably, a mounting table for mounting the sample substrate is moved upward and backward, left and right within a plane for holding the sample substrate. Has a possible sample substrate holder and reflects the sample substrate The angle formed by and is adjusted to an optimum grounding angle of less than 1 °, where the two cooperate with each other to converge and converge to increase the X-ray intensity, and the converged X-rays pass through the analyzed part. And a device for fixing the interval at which the X-ray converged passes through the reflection plate and irradiates the analyzed portion, and the device is provided with 7. The total reflection X-ray fluorescence analyzer according to claim 6, wherein the entire surface of the sample substrate can be analyzed by relative movement of the reflection plate. In addition, TXRF
Examples of the apparatus include a rotary X-ray generator (RU-200, Rigaku Denki, Japan), a large angle adjuster for adjusting the incident angle of primary X-rays, and a W / C multilayer monochromator. . The X-ray generator is equipped with a Mo anode and is operated at a voltage of 30 kV and a tube current of 90 mA. The total reflection fluorescence X-ray analysis apparatus of the present invention can be prepared by attaching and improving the primary X-ray intensity increasing and irradiation angle adjusting means, which are the features of the present invention, to another known XRF apparatus. The sample substrate of the present invention is not only a substrate to be analyzed such as a Si wafer but also a means for holding a sample to be analyzed.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail. A. The features of the present invention will be described with reference to the drawings. Figure 1
FIG. 1 is a schematic view of a total reflection X-ray fluorescence analyzer of the present invention.
Here, X-rb is a primary X-ray source (not shown), and R
e is a reflector, and S.e. P is a sample substrate, and R.P. S is a rotary stage, and S. P. S is a mounting table, and S.
P. H is a sample substrate holding unit, and Z-S is a device for adjusting the reflection plate to an optimum angle, for example, an adjusting device for adjusting the reflection plate to an optimum angle, including a rod for pushing up the reflection plate in the Z-axis direction by a stepping motor. Is. EDS is an energy dispersive X-ray spectrometer.

B. The wavelength range used in the fluorescent X-ray method is ~ 0.
It is from 1 (U Kα) to -20 (FKα). For forming a cathode for obtaining Kα rays, Mo, Cr,
Although there are Rh, Au, Pt, Ag, etc., they are determined by the element to be measured. C. As a constituent material of the reflector, a simple material such as silica, glass, or silicon, or a W / C composite material is used. D. The fluorescent X-ray detector includes a wavelength dispersion type and an energy dispersion type, which can be selected according to the purpose of measurement.
Energy dispersive type (EDS) is suitable for inspection because it can simultaneously measure spectra in a wide range of energy range and has extremely high detection efficiency.

E. By applying the reflection plate Re, the primary X-rays are transmitted to the sample substrate S.P. It was possible to converge on the measured position of P. In order to achieve this convergence under the condition of total reflection between both plates, θ formed between both plates and the primary X-ray and the sample substrate S. It is important to optimize the angle φ formed by P, the distance between the reflection plate and the sample substrate, the shape of the reflection plate, and the like. The X-ray optical device, that is, an optical device composed of two primary X-ray total reflections of a reflection plate and a sample substrate and a reflection plate arranged under a converging condition is a waveguide for obtaining an X-ray beam in a narrow region. It is also useful as a body.

[0012]

The description here is intended to illustrate the principles of the invention in greater detail and is not meant to limit the invention.

Example 1 In this example, a sample for analysis, here an Au thin film is deposited on a sample substrate, and the sample is analyzed by TXRF. A circular 5-10 nm Au thin film with a diameter of 10 mm was deposited on a Si sample substrate (20 x 70 mm) [Fig.
(b)]. The Si reflector (30 × 80 mm) was attached on a Cu holder [FIG. 2 (b)]. The reflector was mounted on a Si sample substrate and Z-axis motion stage (Fig. 2).
The angle (θ) between the Si sample substrate and the Si reflector can be changed by a Z-stage (device for moving the Z axis) driven by a stepping motor (0.5 μm / pulse) (not shown). Two rods mounted on the Z-stage push the reflector. Primary X-rays pass between these two rods and illuminate the sample Au thin film. The distance between the sample substrate and the reflection plate is adjusted by inserting an aluminum foil spacer (0.03 mm, FIG. 2) which is a means for maintaining the distance at which the converged X-rays pass and the irradiated portion is irradiated. Here, the spacer functions to secure a sufficient amount of X-ray irradiation to the analyzed portion and to irradiate the surface to be measured with the primary X-ray at an optimum angle.

The TXRF equipment is a rotary X-ray generator (RU).
-200, Rigaku Denki, Japan), W / C multilayer monochromator, and adjusting the incident angle of the irradiated primary X-ray,
It is equipped with a large angle adjuster that constitutes the rotary stage.
FIG. 1 is an overall view of a TXRF device equipped with a reflector of the present invention, and FIG. 2 shows a portion for increasing and irradiating primary X-rays, which is a characteristic portion of the present invention. The X-ray generator has a Mo anode and is operated at a voltage of 30 kV and a tube current of 90 mA.
The primary X-ray is irradiated on the surface of the sample substrate at a glancing angle (grazing angle) through a slit (0.3 mm width) (not shown) placed between the W / C monochromator and the sample. To be done. The Z-axis stage is mounted above the rotary stage (Fig. 1). The primary X-ray incident angle (φ) can be changed by the sample rotating stage and the sample rotating stage. Si
The Au layer on the sample holder is placed at the center of rotation of the sample stage. X-ray fluorescence is an energy dispersive X-ray detector (EDS) (Oxford) mounted at a distance of 10 mm from the sample.
Instrument, UK). The computer controls the wave height analyzer, the Z-axis stepper-motor stage and the goniomorphic device. The angle dependence of X-ray fluorescence intensity is automatically measured by a computer.

AuLα emitted from the Au thin film on Si
The fluorescence intensity of Si Kα and Si Kα was measured as a function of the incident angle (φ) of X-ray without using a reflector, and a clear angle dependence was observed as shown in FIG.

Next, the reflector was attached to the Z-stage. Au at fixed different angles of incidence (φ)
Lα and Si Kα are the X-ray fluorescence intensity and the reflector plate angle (q).
Was measured as a function of 0.065 °, 0.115 °,
Experimental results obtained with a reflector angle of 0.215 ° and 0.215 ° are shown in FIGS. 4 (a), (b) and (c), respectively.
These experiments were performed using an Al foil spacer (0.03 mm). As shown in FIG. 4 (5) (a),
The maximum is observed in the plot of angle-dependent data. The angle (θ) position of this maximum value depends on the incident angle (φ). The maximum observed positions for the incident angles of 0.065 ° and 0.115 ° were 0.16 ° and 0.22 °, respectively. At a large incident angle of 0.215 °, the maximum value showed a broad peak.

These results can be explained using the simplified drawing of FIG. If the angle (c) between the reflector and the X-ray beam is less than the critical angle for total internal reflection, the angle is about 0.1 ° with respect to Mo Kα on Si. It is totally reflected on the surface of the plate. In this case, the following simple relationship is obtained. c + θ = 2c + φ ... (1) When the incident angle is 0.65 °, 0.115 °, and 0.215 ° and the c angle is 1 °, the reflection plate angle (θ) is 0.165 ° and 0, respectively. Calculated as .225 °, and 0.315. The results of these calculations are very close to the measurement angle at the peak in FIG. These points to the idea that the X-rays reflected on the reflector contribute to the generation of the peaks in FIG. If the reflector angle (θ) is further reduced, the reflector will block the primary X-ray beam. On the contrary, if the angle (θ) is larger than 0.1 °, the primary X-ray is blocked by the reflector. Therefore, the maximum value is observed near 0.1 °. The incident angle (d) at which the X-ray reflected on the reflection plate in FIG. 5 irradiates the sample is simply calculated as 2c + φ. c = 0.1 °, φ = 0.065 °
, The incident angle is 0.265 °, which is greater than the critical angle for total internal reflection. Here, the inventor
+ Φ = 0.1. From this relationship and the formula (1), the formula (θ = 0.05 + 0.5φ) was obtained. Therefore,
For φ of 0.065 °, θ of 0.0825 ° can be obtained. Since θ is smaller than 0.0825 °, the reflected X-ray will be totally reflected again on the sample surface.
It was confirmed that the configuration of the present invention in which the primary X-rays are focused on the sample position, which is the measurement position, under the condition of total internal reflection is effective as a means for increasing the X-ray fluorescence intensity.

FIG. 6A shows an incident angle (φ) of 0.06 °.
Shows the X-ray spectrum measured under the condition without a reflector. In addition to Au and Si characteristic X-rays, strong ArKα generated from air was observed. FIG. 6B is an X-ray spectrum obtained at the same incident angle of 0.06 ° (φ) and the reflection angle (θ) of 0.16 °. It can be seen from comparison with the spectrum in FIG. 6A that SiKα is relatively strong. This is probably because the incident angle of the reflected X-ray is larger than the above-mentioned critical angle. Further, it was revealed that ArKα is considerably reduced by applying the reflector. This indicates that the reflector is effective in reducing the x-ray background generated from the air and the sample substrate far away from the analysis location. That is, it is clear that the reflector also has a role of blocking unnecessary X-rays.

Next, an Au thin layer having a thickness of 5 nm was also measured. Similarly, the Au layer has a diameter of 10 on the Si sample holder.
deposited to mm. After measuring the incident angle (φ) dependence of the AuLα and SiKα intensities, the reflection angle (θ) dependence was observed. FIG. 7 shows the reflection angle (θ) at an incident angle of 0.04 °.
AuLα and SiKα intensities as a function of In this case, two peaks of 0.14 ° (first peak) and 0.06 ° (second peak) are observed for AuLα. In Expression (1), c is 0.1 ° and φ is 0.
At 04, θ was calculated to be 0.14 °, which is in agreement with the experimental angle of the first peak in FIG. 7. 0.06 ° in FIG.
The second peak in Fig. 8 shows the multiple reflection excitation effect.
Explained by. In the conventional TXRF, once the primary X
The line beam was totally reflected from the surface and then only left the sample. The present inventors considered using such X-rays to irradiate the sample again by applying a reflector. In FIG. 8, when the angle (c) is 0.1 ° and φ is 0.04 °, the reflection angle (θ) is calculated to be 0.14 °, and its value is the first value in FIG. It agrees with the experimental angle of two peaks. As shown in FIG. 7, the intensity of SiKα is also strong at 0.14 ° where the first peak of the AU La intensity is observed. However, the SiKα intensity becomes weak at 0.06 ° where the second peak is observed. That is, it is possible to increase the signal intensity of Au while reducing X-rays from the silicon substrate. This condition is suitable for improving the TXRF intensity.

[0020]

As described above, the reflection plate is mounted on the sample substrate of the TXRF measuring instrument so that the inclination angle formed by the reflection plate and the sample substrate can be changed, and the measured portion of the sample substrate is irradiated. By being configured so that the total reflection condition for converging the primary X-ray to the position can be achieved, the excellent effect that the lower limit of measurement can be improved is brought about. Further, it is also an effect of the present invention that the X-ray background can be reduced by applying the reflection plate.

[Brief description of drawings]

FIG. 1 is a schematic view of a total reflection X-ray fluorescence analyzer of the present invention.

FIG. 2 shows a portion for increasing and irradiating primary X-rays, which is a feature of the present invention.

FIG. 3 AuLα and Si emitted from an Au thin film
Correlation between fluorescence intensity of Kα and incident angle (φ) of X-ray

FIG. 4 Correlation between X-ray fluorescence intensities Au Lα and Si Kα and reflector angle (q)

FIG. 5: Arrangement of a reflection plate and a sample substrate of the present invention, and explanation of the principle of X-ray focusing by total reflection

FIG. 6 (a) is an explanation of blocking characteristics of X-ray background generated from a sample substrate by applying a reflection plate in comparison with (b) application of a reflection plate without a reflection plate.

FIG. 7 shows a multiple reflection excitation effect by a reflector and a sample substrate.

FIG. 8 Principle of multiple reflection by a reflector and a sample substrate

[Explanation of symbols]

X-rb primary X-ray Re reflector S.I. P sample substrate R.P. S rotation stage S. P. S mounting table S. P.
H Sample substrate holder ZS Optimal angle adjusting device for reflector EDS Energy dispersive X-ray spectrometer

Claims (7)

[Claims] 1. A sample substrate having a primary X-ray reflection characteristic, and an X from a primary X-ray source on an analyzed portion of the sample substrate.
The line can be adjusted to an optimum angle below 1 °, which is an angle at which the X-ray intensity can be increased by converging by multiple total reflection in cooperation with the sample substrate and increasing the X-ray intensity. Did X
A total reflection fluorescent X-ray analysis method using a total reflection type fluorescent X-ray analyzer having a structure including a primary X-ray reflection plate arranged at an interval for passing a ray and irradiating the analyzed portion. . 2. A sample substrate having a primary X-ray reflection characteristic, an X-ray from a primary X-ray source on an analyzed portion of the sample substrate.
The angle at which the X-ray intensity can be increased by increasing the X-ray intensity by converging the rays by multiple total reflection in cooperation with the sample substrate to 1
A reflector which can be adjusted to an optimum angle of less than 0 ° and which is arranged with an interval for passing the converged X-rays and irradiating the analyzed part to the optimum angle, and the converged X-axis.
Maintaining an interval at which a ray passes and irradiates the analyzed portion, in cooperation with the adjustment, the X-ray from the primary X-ray source is irradiated at a desired intensity and at a glancing angle to the analyzed portion of the sample substrate. Using a total reflection type fluorescent X-ray analysis apparatus including a mounting stage for the sample substrate having a rotary stage capable of changing the angle between the X-ray from the primary X-ray source and the sample substrate for irradiation. The total reflection X-ray fluorescence analysis method according to claim 1. 3. The sample substrate holding part of the mounting table can be moved back and forth and left and right on the holding part plane, and can be adjusted to an optimum angle.
In addition, the reflectors arranged at intervals so that the converged X-rays pass therethrough and irradiate the analyzed portion are maintained at the optimum angle and the distance, and in a fixed state, they are moved relative to each other with the movement in the front-rear direction and the left-right direction. The total reflection fluorescent X-ray analysis method according to claim 1 or 2, wherein a total reflection type fluorescent X-ray analyzer capable of analyzing the entire surface of the sample substrate is used. 4. The total reflection fluorescent X-ray analysis method according to claim 1, 2 or 3, wherein the primary X-ray reflection plate is a silicon wafer or a flat quartz glass plate, and the sample substrate is a wafer. . 5. In a total reflection X-ray fluorescence analyzer, X-rays from a primary X-ray source are collimated by the sample substrate to be subjected to multiplex total reflection and converged on an analyzed portion of the sample substrate. A device for adjusting the angle formed by both plates to an optimal angle of less than 1 ° so that the intensity can be increased and irradiation can be performed at a glancing angle, and the interval for irradiating the analyzed part through which converged X-rays pass is maintained. X-ray reflection plate provided with a total reflection fluorescent X
Line analyzer. 6. A rotary stage equipped with an angle adjuster for adjusting an angle formed by X-rays from a primary X-ray generation source and a sample substrate, and a sample substrate mounting table and a sample mounted on the upper part of the rotary stage. In cooperation with the substrate, multiple total reflections are performed and converged to increase the X-ray intensity and the glancing angle can be adjusted to an optimum angle less than 1 ° of the irradiating angle, and the converged X-rays pass through. A device for adjusting the reflection plate to the optimum angle, which is provided with a device for maintaining an interval for irradiating the analyzed portion, and for maintaining an interval for irradiating the analyzed part through which converged X-rays pass The total reflection X-ray fluorescence analyzer according to claim 5, further comprising a primary X-ray intensity increasing and irradiation angle adjusting device. 7. A mounting base for mounting a sample substrate has a sample substrate holding portion which is movable in a holding plane for moving the sample substrate back and forth and left and right, and an angle between the sample substrate and the reflection plate is defined by both of them. The optimum grounding angle is adjusted to less than 1 °, which cooperates with multiple total reflection to converge and increase the X-ray intensity, and maintains the interval at which the converged X-rays pass and irradiate the analyzed portion. A device and a device for fixing the reflecting plate at the optimum angle and at an interval at which converged X-rays pass and irradiate the analyzed portion, and the relative movement of the reflecting plate is caused by the forward and backward movement and the left and right movement. The total reflection X-ray fluorescence analyzer according to claim 6, wherein the entire surface of the sample substrate can be analyzed.