JP2003179027A - Method of etching nitride system compound semiconductor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an etching method which can make a surface applicable as an end surface of a semiconductor laser resonator in a wafer selectively and without giving a damage to a crystal. <P>SOLUTION: A GaN buffer layer 2, an n-type GaN layer 3, an n-type AlGaInN cladding layer 4, a GaN active layer 5, a p-type AlGaInN cladding layer 6, and a p-type GaN layer 7 are sequentially deposited on a sapphire substrate 1 in this order. By a heat treatment in an hydrogen atmosphere or by the application of a hydrogen plasma, resistances of the portions (H regions) of the p-type AlGaInN cladding layer 6 and the p-type GaN layer 7 are increased. Then, the H regions are selectively subjected to electrolysis by using electrolyte such as chloric acid. After the electrolysis reaches the GaN active layer 5, the electrolysis is further continued while light is applied and, when the electrolysis reaches the n-type GaN layer 3, the electrolysis is discontinued. Finally, the whole unit is subjected to a heat treatment in an atmosphere containing no hydride gas under a temperature not lower than 500°C and hydrogen atoms are discharged from the H regions to restore the H regions into original low resistance states. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a light emitting diode in the blue to ultraviolet range or a laser diode in the same wavelength range, and more particularly to a method for etching a gallium nitride based semiconductor used in the light emitting device.

[0002]

2. Description of the Related Art A blue light emitting device is expected as a light source for a full color display or an optical disk capable of high density recording, and is a II-VI group compound semiconductor such as ZnSe or III such as SiC or GaN.
-V compound semiconductors are being actively studied. In particular, a blue light emitting diode has recently been realized using AlGaN and GaN, and a light emitting element using a nitride-based compound semiconductor has attracted attention. A method for manufacturing a device using a nitride compound semiconductor will be described.

First, as shown in FIG. 6, a GaN2 buffer layer, n-GaN3, n-AlGaInN4, GaN5, p-AlGaInN6, p-Ga are first formed on a sapphire substrate 1 by a metal organic chemical vapor deposition (MOVPE) method or the like.
After N7 was sequentially deposited, dry etching was used to n-AlGa
A part of InN4, GaN5, p-AlGaInN6, and p-GaN7 is removed by etching, and a part of n-GaN3 is exposed to form a negative electrode. As described above, the nitride-based compound semiconductor does not have an appropriate etching solution, and is processed by using dry etching in forming a fine structure of a device.

In addition, the crystal structure of the sapphire substrate is a rhombohedral structure, and the (0001) plane is usually easily available.
When a nitride compound semiconductor is grown on this substrate, there is no cleavage in the direction perpendicular to the device structure. For example, when a semiconductor laser is manufactured using this, dry etching or mechanical backside I had no choice but to put a scribe in and break it.

[0005]

However, in the conventional manufacturing method by dry etching, the crystal is damaged during etching, and there is a problem in device reliability. In particular, when a fine structure for current confinement is produced, and when etching needs to be controlled in the vicinity of the active layer, crystal damage is fatal to the device.

Further, when the wafer is broken by dry etching or by mechanically scribing the back surface of the substrate, the end surface of the device light emitting resonator is damaged as shown in FIG. It was difficult.

An object of the present invention is to solve such a problem and to provide an etching method for forming a surface which can be used as an end surface of a semiconductor laser resonator selectively in a wafer and without damaging a crystal. .

[0008]

Means for solving the problems Means for solving the above problems are as follows. (1) A step of selectively diffusing hydrogen atoms into a part of a wafer composed of a nitride-based compound semiconductor containing a p-type nitride-based compound semiconductor, and immersing the semiconductor in an electrolytic solution to apply an electric field to perform etching. A method for etching a nitride-based compound semiconductor, comprising: In particular, as a means for selectively diffusing hydrogen atoms, a dielectric film is selectively deposited on a part of a wafer composed of a nitride compound semiconductor, and heat treatment is performed in an atmosphere composed of a hydride gas containing ammonia. A method for etching a nitride-based compound semiconductor, which is a feature. (2) A step of diffusing hydrogen atoms into a wafer composed of a nitride-based compound semiconductor containing a p-type nitride-based compound semiconductor, and immersing the semiconductor in an electrolyte solution and selectively irradiating a part of the semiconductor with an electric field. It is a method of etching a nitride-based compound semiconductor, which is characterized in that etching is performed by applying. In particular, in the method of etching a nitride-based compound semiconductor, the step of diffusing hydrogen atoms is performed by heat treatment in an atmosphere composed of a hydride gas containing ammonia. (3) A method for etching a nitride-based compound semiconductor, which comprises a step of diffusing hydrogen atoms in a cross-section of a nitride-based compound semiconductor multilayer film, and immersing the multilayer film in an electrolytic solution to apply an electric field to perform etching. Is. In particular, in the method of etching a nitride-based compound semiconductor, the step of diffusing hydrogen atoms is performed by heat treatment in an atmosphere composed of a hydride gas containing ammonia.

[0009]

According to the above-mentioned method (1) for manufacturing a semiconductor laser of the present invention, when a wafer of a nitride compound semiconductor containing a p-type nitride compound semiconductor is heat-treated in a hydride gas containing ammonia, a dielectric is obtained. Decomposition of ammonia is suppressed in the portion where the film is selectively deposited, and decomposition of ammonia is promoted in the portion where the dielectric film is not deposited, and hydrogen atoms diffuse into the crystal. The p-type nitride compound semiconductor in which hydrogen atoms are diffused has high resistance due to hydrogen passivation. When this wafer is immersed in an electrolytic solution and electrolyzed by applying an electric field, holes are supplied to the p-type portion to cause decomposition, but no holes are supplied to the high resistance portion, so that no decomposition occurs.

According to the above-mentioned method (2) for manufacturing a semiconductor laser of the present invention, when a wafer of a nitride-based compound semiconductor containing a p-type nitride-based compound semiconductor is heat-treated in a hydride gas containing ammonia, ammonia gas is produced. Hydrogen atoms generated by the decomposition diffuse into the crystal, and the p-type nitride compound semiconductor layer is made to have high resistance by hydrogen passivation. When this wafer is immersed in an electrolytic solution and a part of the wafer is selectively irradiated with a light beam and an electric field is applied to perform electrolysis, holes are supplied to the light irradiation part and decomposed, but holes are supplied to the unirradiated part. No decomposition, so no decomposition occurs.

According to the above method (3) for manufacturing a semiconductor laser of the present invention, when a multilayer film made of a nitride compound semiconductor is heat-treated in a hydride gas containing ammonia, hydrogen atoms generated by decomposition of ammonia are generated. Hydrogen is passivated to make the p-type nitride compound semiconductor layer diffused in the crystal to have high resistance. When electrolysis is performed by applying an electric field while irradiating a light beam on this cross section, holes are uniformly supplied to the light beam irradiation portion and electrolysis occurs regardless of the conduction type of the multilayer film, and a laser resonator end face can be manufactured. .

[0012]

Embodiments of the present invention will be described below with reference to the drawings.

Example 1 As shown in FIG. 1A, first, a GaN buffer layer 2, an n-GaN layer 3, and an n-GaN layer were formed on a sapphire substrate 1.
The AlGaInN clad layer 4, the GaN active layer 5, the p-AlGaInN clad layer 6, and the p-GaN layer 7 are sequentially deposited, and the SiO ₂ mask 8 is used as the p-GaN.
Selectively deposited on layer 7. Crystal growth is performed by a metal organic vapor phase epitaxy (MOVPE) method. That is, first, prior to vapor phase growth, the sapphire substrate 1 is placed on a susceptor in a reaction furnace, evacuated, and then heated at 1100 ° C. for 10 minutes in a hydrogen atmosphere of 100 Torr to clean the substrate.

Next, the temperature is cooled to 600 ° C., TMG (trimethylgallium) is 60 μmol / min, and NH 3 (ammonia) is 1.3 L.
/ Min, 2.5 L / min of carrier hydrogen flow to GaN buffer layer 2
Grow to 50 nm.

Next, only the TMG supply is stopped and the temperature is changed to 1030 ° C.
Then, TMG is supplied at 60 μmol / min and SiH 4 (silane) is supplied at 1 μmol / min to deposit the n-GaN layer 3.

Then, the supply of TMG is stopped, the temperature is lowered to 800 ° C., and then the flow rate of NH 3 is increased to 10 L / min. Furthermore, TMA (trimethylaluminum) 50 μmol / min, TMG 60 μmol / min
Min, TMI (trimethylindium) 500μmol / min, Si
N-AlGaInN cladding layer 4 containing H4 added at 1 μmol / min
After depositing, the supply of TMG, TMA, and TMI is stopped, the temperature is raised to 1030 ° C, and the flow rate of NH3 is set to 1.3 L / min.

Next, after supplying TMG at 60 μmol / min to deposit the GaN active layer 5, the temperature is lowered to 800 ° C. again, the flow rate of NH 3 is increased to 10 L / min, TMA is 50 μmol / min, TMG To 60 μmol / min, TMI to 500 μmol / min, and Cp2Mg (cyclopentadienylmagnesium) to 1 μmol / min to supply pA.
The lGaInN cladding layer 6 is deposited.

Finally, the supply of TMG, TMA and TMI is stopped and 1030
The temperature is raised to ℃ and the flow rate of NH3 is set to 1.3 L / min.
Mol / min, Cp2Mg is supplied at 1 μmol / min to deposit the p-GaN layer 7.

When cooling after growth, NH3 is used at 600 ° C. or higher.
Stop the supply of H2O and cool to room temperature in an atmosphere of H2 only.
That is, during this cooling process, the p-AlGaInN cladding layer 6 and p-GaN
Prevents the entry of hydrogen atoms into the layer 7. Where 600 ° C
The reason for stopping the supply of NH3 at the temperature is because it is necessary to expel the hydrogen contained in the crystal together with the p-type dopant Mg from the crystal. The gas supply was stopped at this temperature because the gas can be turned off.

Next, a SiO2 mask 8 is selectively deposited by using photolithography, and then 600 in a mixed atmosphere of NH3 and H2.
Heat treatment at ℃ for 10 minutes. NH3 flow rate is 2 L / min. During the cooling process, NH3 is supplied up to room temperature. In this process SiO
2 In the regions other than the mask 8, NH3 is decomposed and hydrogen atoms are generated and penetrate into the crystal (H region in FIG. 1 (b)).
Since the decomposition of NH3 is suppressed on the SiO2 mask 8, hydrogen atoms do not enter. Therefore, only the H region has a high resistance.
For hydrogenation of the H region, hydrogen plasma may be applied using a dielectric film such as SiO2 as a mask, instead of heat treatment in a hydride atmosphere.

Next, after removing the SiO 2 mask 8 with hydrofluoric acid,
As shown in FIG. 2, the wafer is dipped in an electrolytic solution 11 such as hydrochloric acid.
A positive electrode 9 is provided on the p-GaN 7 of the wafer, and a negative electrode is provided on the electrolytic solution 11. When an electric field is applied in this state, holes are supplied to the p-type conduction region as shown in FIG.
Ions such as + are generated and electrolysis occurs. That is, as shown in FIG. 1C, the p-AlGaInN cladding layer 6 and the p-GaN
Layers 7 other than the H region are selectively etched away.

Further, as shown in FIG.
Holes generated by photoexcitation when electrolysis is performed while irradiating the n-GaN active layer 5 and the n-AlGaInN clad layer under the H region with light rays including a wavelength larger than the GaN bandgap (3.4 eV) with a lens. Is supplied, electrolysis occurs and n-GaN is exposed. Therefore, a light emitting device can be manufactured by installing a negative electrode of the device on this.

Finally, the wafer is heat-treated in an H 2 atmosphere at 500 ° C. or higher for 30 minutes to completely remove hydrogen atoms from the wafer. The heat treatment atmosphere may be any atmosphere other than hydride gas such as N2 or Ar other than H2. GaN crystal conductivity type and Xe
FIG. 3 shows the dependence of the etching rate of electrolysis on the irradiation intensity of the lamp light. In p-type GaN, the rate is quite fast even without irradiation of light, whereas it is n-type or high resistance.
GaN is hardly etched without light irradiation.

Further, in any conductivity type, the etching rate increases as the irradiation intensity of the light beam increases. This indicates that the selective etching by electrolysis can be performed with excellent controllability by electric conduction. By performing the wet etching by electrolysis in this manner, it is possible to selectively perform fine processing with good controllability over a wide range without damaging the end face of the active layer.

It should be noted that the light to be irradiated in this embodiment may have a wavelength of energy having a bandgap wavelength larger than that of the material to be irradiated. A helium cadmium laser or a nitrogen laser may be used instead of the Xe lamp. Both wavelengths are about 330 nm.

Further, in this embodiment, p-type AlGaInN is used.
Although hydrogen is introduced into the material of the system to increase the resistance, it is also possible to introduce hydrogen into the material of the n-type AlGaInN system to increase the resistance. Therefore, the method described in this embodiment is It can also be applied to an n-type nitride compound semiconductor.
In that case, the method of introducing hydrogen and the method of etching by electrolysis can be applied as they are to the method shown in FIG.

Although sapphire was used for the substrate,
C can also be used. In this case, the lattice constant can be close to that of the AlGaInN layer grown on the substrate, and further, SiC can be doped so that it can be used as a p-type or n-type substrate.

(Embodiment 2) Next, a method for selectively finely processing a p-type nitride compound semiconductor layer for the purpose of current confinement will be described.

As shown in FIG. 4A, first, on the sapphire substrate 1, a GaN buffer layer 2, an n-GaN layer 3, an n-AlGaInN cladding layer 4, a GaN active layer 5, a p-AlGaInN cladding layer 6, and a p- layer. Ga
N layer 7 is sequentially deposited. Crystal growth is performed by the metal organic vapor phase epitaxy (MOVPE) method described in the first embodiment. Then NH3 and H
2 Heat treatment at 600 ℃ for 10 minutes in mixed atmosphere. NH3 flow rate is 2L
/ Min. During the cooling process, NH3 is supplied up to room temperature. During this process, NH3 is decomposed on the wafer to generate hydrogen atoms, which uniformly penetrate into the p-type conduction crystals of the p-AlGaInN cladding layer 6 and p-GaN layer 7 to increase the resistance for hydrogen passivation. To be done.

Next, the wafer is immersed in an electrolytic solution 11 such as hydrochloric acid as shown in FIG. A positive electrode 9 is provided on the p-GaN 7 of the wafer, and a negative electrode is provided on the electrolytic solution 11.

Next, while irradiating the aperture pattern with Xe lamp light, an electric field is applied to cause electrolysis. At this time, as shown in FIG. 3, holes are supplied only to the part irradiated with light rays and electrolysis occurs, and the high resistance p-type nitride compound semiconductor layer which is not irradiated with light is not electrolyzed.
The light irradiated here may have a wavelength of energy larger than the bandgap wavelength of the material to be irradiated. A helium cadmium laser or a nitrogen laser may be used instead of the Xe lamp. Both wavelengths are 330 nm.

Finally, the wafer is heat-treated in an H 2 atmosphere at 500 ° C. or higher for 30 minutes to completely remove hydrogen atoms from the wafer. The heat treatment atmosphere may be any atmosphere other than hydride gas such as N2 or Ar other than H2. In other words, a fine processing technique by wet etching has become possible by controlling the conductivity type without lowering the crystallinity.

After forming the stripe structure, embedding is performed. GaInN100 was used as the burying layer. Other than this layer, AlGaInN may be used, but in this case, Al is more preferable than the p-AlGaInN cladding layer 6.
Any composition having a small composition may be used. By doing so, a semiconductor laser having a current narrowing structure as shown in FIG. 4E can be obtained.

(Embodiment 3) Next, an embodiment relating to a method of manufacturing an outgoing light end face of a semiconductor laser using a nitride compound semiconductor will be described.

As shown in FIG. 5A, first, on the sapphire substrate 1, a GaN buffer layer 2, an n-GaN layer 3, an n-AlGaInN cladding layer 4, a GaN active layer 5, a p-AlGaInN cladding layer 6, and a p- layer. Ga
N layer 7 is sequentially deposited. Crystal growth is performed by the metal organic chemical vapor deposition (MOVPE) method described in the first embodiment.

Next, heat treatment is performed at 600 ° C. for 10 minutes in a mixed atmosphere of NH 3 and H 2. NH3 flow rate is 2 L / min. During the cooling process, NH3 is supplied up to room temperature. In this process, NH3 is decomposed on the wafer to generate hydrogen atoms, which uniformly penetrate into the p-type conduction crystals of the p-AlGaInN cladding layer 6 and p-GaN layer 7,
High resistance due to hydrogen passivation.

Next, the wafer is mechanically scribed to form a laser bar having a width equal to or longer than the laser cavity length. This width is preferably about 0.1 μm longer than the laser cavity length for good process controllability and simplicity.

Next, the wafer is immersed in an electrolytic solution 11 such as hydrochloric acid as shown in FIG. A positive electrode 9 is provided on the p-GaN 7 of the wafer, and a negative electrode is provided on the electrolytic solution 11.

Next, as shown in FIG. 5A, an electric field is applied to the end face of the resonator while irradiating the end face of the resonator with Xe lamp light to cause electrolysis, and etching is performed as shown in FIG. 5B. According to this method, since all the layers of the resonator end face have high resistance, the end face can be uniformly electrolyzed.

Finally, the wafer is heat-treated in an H 2 atmosphere at 500 ° C. or higher for 30 minutes to completely remove hydrogen atoms from the wafer. The heat treatment atmosphere may be any atmosphere other than hydride gas such as N2 or Ar other than H2. FIG. 7 shows the result obtained by measuring the flatness of the end face of the resonator produced by electrolysis in this way. The horizontal axis of FIG. 7 indicates the distance from the buffer layer 2 to the p-GaN layer 7. That is, 0 on the horizontal axis indicates the interface between the substrate 1 and the buffer layer 2, and the position from the interface is indicated on the horizontal axis. The vertical axis shows the unevenness of the end face, which is the result of scanning the unevenness of the end face upward from the interface between the substrate and the buffer layer, and is taken on a log scale.

From FIG. 7, it has been confirmed that the present invention has significantly improved flatness as compared with the conventional method of mechanically scribing a substrate to form an end face. That is, in the conventional scribe, the unevenness has an amplitude of 1000 Å (A), whereas in the present invention, the unevenness is about 10 A. If the crystallinity is sufficiently improved by this method, the end face of the semiconductor laser resonator can be sufficiently manufactured by using the present invention.

Although AlGaInN is used as the nitride-based material in this embodiment, here, AlGaInN is used.
And AlxGayInzN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1,
0 ≦ z ≦ 1), and any value may be used for x, y, and z. Further, BN (boron nitride) may be used in a system not containing Al.

Further, the case where hydrogen was diffused using p-type AlGaInN and then etching was performed by electrolysis was described. However, as described at the end of Example 1, even when n-type AlGaInN is used, hydrogen diffusion after hydrogen diffusion is performed. It can be etched by electrolysis.

[0044]

As described above, according to the first manufacturing method of the present invention, the electrode portion can be formed by the wet etching using the electrolytic solution instead of the conventional dry etching which damages the crystal. The reliability of the light emitting device is dramatically improved.

Further, according to the second manufacturing method, since only the portion irradiated with the light beam can be etched selectively and with good controllability without damaging the crystal, fine processing which requires reliability such as current confinement of laser. Technology becomes possible.

Further, according to the third manufacturing method, it becomes possible to reproducibly form the cavity facet of the nitride compound semiconductor laser, which has been heretofore impossible.

[Brief description of drawings]

FIG. 1 is a process sectional view according to a first embodiment of the present invention.

FIG. 2 is a process diagram of electrolysis regarding Examples 1, 2, and 3 of the present invention.

FIG. 3 is a diagram showing the dependence of etching rate by light irradiation on Examples 1, 2, and 3 of the present invention.

FIG. 4 is a process cross-sectional view related to Example 2 of the present invention.

FIG. 5 is a process sectional view relating to a third embodiment of the present invention.

FIG. 6 is a cross-sectional view of an element after a conventional etching or scribing process.

FIG. 7 is a diagram showing an effect of improving flatness according to a third embodiment of the present invention.

[Explanation of symbols]

1 sapphire substrate 2 GaN buffer layer 3 n-GaN layer 4 n-AlGaInN clad layer 5 GaN active layer 6 p-AlGaInN clad layer 7 p-GaN layer 8 SiO2 mask 9 Positive electrode 10 negative electrode 11 Electrolyte 100 GaInN layer

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[Submission date] October 23, 2002 (2002.10.
23)

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[0008]

A step of selectively depositing a mask on a part of the surface of a nitride-based compound semiconductor on a substrate, and a nitride-based compound which does not overlap the mask by heat-treating the substrate in a hydride atmosphere A step of increasing the resistance of only the portion of the compound semiconductor, a step of removing the mask, a step of immersing the substrate in an electrolytic solution and applying an electric field to etch the nitride compound semiconductor in the portion where the resistance is not increased. A method of etching a nitride-based compound semiconductor having the same. As another means for solving the above problems, a step of selectively depositing a mask on a part of the surface of the nitride-based compound semiconductor on the substrate, and irradiating the substrate with hydrogen plasma to prevent the nitride from overlapping with the mask A step of increasing the resistance of only the part of the compound-based compound semiconductor, a step of removing the mask, a step of immersing the substrate in an electrolytic solution and applying an electric field to etch the part of the nitride-based compound semiconductor which has not been increased in resistance. And a method for etching a nitride-based compound semiconductor.

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   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kiyoshi Onaka             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Toshiya Fukuhisa             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. F-term (reference) 5F041 CA34 CA40 CA46 CA73 CA74                       CA77                 5F043 AA16 BB10 DD02 DD08 DD14                 5F073 CA07 CB05 DA22 DA23 DA32                       DA35

Claims (12)

[Claims] 1. A step of selectively diffusing hydrogen atoms into a part of a p-type nitride compound semiconductor; and immersing the compound semiconductor in an electrolytic solution to apply an electric field to diffuse the hydrogen atoms of the compound semiconductor. Etching a non-existing region, a method for etching a nitride-based compound semiconductor. 2. The method of etching a nitride-based compound semiconductor according to claim 1, wherein the step of diffusing hydrogen atoms is a step of performing heat treatment in an atmosphere composed of a hydride gas containing ammonia. 3. A step of selectively depositing a dielectric film on a part of a nitride compound semiconductor, and then selectively diffusing hydrogen atoms into the compound semiconductor on which the dielectric film is not formed. The method for etching a nitride-based compound semiconductor according to claim 2. 4. A step of diffusing hydrogen atoms into a p-type nitride compound semiconductor, immersing the compound semiconductor in an electrolytic solution, and selectively allowing a predetermined portion of the compound semiconductor to have a band gap wavelength larger than the compound semiconductor. And a step of applying an electric field while irradiating a light beam of energy to perform etching, and a method of etching a nitride-based compound semiconductor. 5. The method for etching a nitride-based compound semiconductor according to claim 4, wherein the step of diffusing hydrogen atoms comprises performing heat treatment in an atmosphere composed of a hydride gas containing ammonia. 6. A method comprising: diffusing hydrogen atoms in a cross section of a multilayer film made of a nitride compound semiconductor; and immersing the multilayer film in an electrolytic solution to apply an electric field to etch the compound semiconductor. A method for etching a nitride-based compound semiconductor, which is characterized. 7. The method for etching a nitride-based compound semiconductor according to claim 6, wherein the step of diffusing hydrogen atoms is a step of performing heat treatment in an atmosphere composed of a hydride gas containing ammonia. 8. A dielectric film is selectively formed on the AlGaInN layer, and a gas for generating hydrogen by thermal decomposition is caused to flow over the AlGaInN layer including the dielectric film to thermally decompose the gas. A hydrogen diffusion method, wherein the generated hydrogen is diffused into the AlGaInN layer on which the dielectric film is not formed. 9. A step of growing a p-type AlGaInN layer by supplying a gas containing NH3 at a temperature higher than the decomposition temperature of the NH3 gas, and a step of growing the p-type AlGaInN layer at the time of cooling after the growth. The N at the temperature at which the bond between the type dopant and hydrogen is broken.
A hydrogen diffusion preventing method for stopping the diffusion of hydrogen into the AlGaInN layer by stopping the supply of H3 and cooling in an atmosphere of only H2. 10. The temperature at which the supply of NH3 is stopped is 600.
10. The method for preventing hydrogen diffusion according to claim 9, wherein the temperature is not less than ° C. 11. A step of growing an n-type AlGaInN layer on a substrate, and a p-type AlGaInN layer on the n-type AlGaInN layer.
A step of growing a layer, a step of selectively diffusing hydrogen atoms in a part of the p-type AlGaInN layer, an electric field by immersing the p-type and n-type AlGaInN layers in an electrolytic solution, Semiconductor light emission comprising: a step of etching a region in which hydrogen atoms are not diffused; a step of etching the n-type AlGaInN layer; and a step of releasing hydrogen atoms diffused in the p-type AlGaInN layer. Device manufacturing method. 12. The method of manufacturing a semiconductor light emitting device according to claim 11, wherein the step of etching the n-type AlGaInN layer is performed by irradiating a light beam having an energy larger than the band gap wavelength of the AlGaInN layer. .