JP2003173949A - Exposure system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure system which is capable of exposing a complicated pattern in a shorter time. <P>SOLUTION: This exposure system is equipped with an exposure material (40) on which sensitive material is applied, a light source (21) which emits exposure light to expose the sensitive material, an optical system (20) which guides the exposure light to the exposure material along an optical path, a positioning means (10) which positions the relative positions of the optical system and the exposure material, a multi-mirror unit (30) which is disposed on the optical path and equipped with a plurality of mirrors that can be selectively driven, and a control means (50) which controls directions of the mirrors separately, corresponding to data on an exposure pattern. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor integrated circuit,
The present invention relates to an exposure apparatus used in the steps of exposure and fine processing for manufacturing a liquid crystal display device, a plasma display, a circuit board, etc., and particularly to an exposure apparatus which generates an exposure pattern suitable for patterning a material to be exposed.

[0002]

2. Description of the Related Art In a patterning process of a semiconductor integrated circuit, a liquid crystal panel, a printed circuit board, etc., a mask having a pattern is used for photolithography.

The mask is manufactured, for example, as follows. First, a light shielding film is formed on a transparent substrate, and a photoresist is applied on this. A mask pattern is exposed on this photoresist and developed to remove the photoresist on the exposed or non-exposed areas. A desired mask pattern is obtained by etching the light shielding film using the remaining photoresist as a mask.

In the above-mentioned exposure, for example, as shown in FIG. 6A, a mask pattern is divided into fine rectangular areas that can be exposed, and flash exposure is repeated for the rectangular areas while moving each divided area. It can be done by In addition, in FIG. 6, a white background portion indicates an “exposed” area, and a black background portion indicates a “non-exposed” area.

In another example shown in FIG. 6B, in order to perform the exposure process in a shorter time, the size of the aperture of the exposure apparatus is mechanically variable and the irradiation shape of the exposure light beam for irradiating the photoresist. Is determined for each irradiation position. The number of times of irradiation is reduced by shortening the time required for the exposure process by repeating the exposure with each irradiation position having a predetermined size based on the mask pattern data. As an example of adopting such a method, as described in Japanese Patent No. 270817, "Pattern Generator Control Method".
There is.

[0006]

However, even in the second exposure method described above, when the exposure pattern at the present irradiation position is different from the exposure pattern at the previous irradiation position, the light shielding plate (blade) of the variable aperture mechanism is moved. Since the required exposure pattern has to be set, the exposure process requires time. Further, the exposure pattern is limited to a rectangle (square, rectangle), and for a complicated portion where the exposure pattern is fine, the number of exposures must be increased by using a rectangular pattern having a small area.

Further, as described above, since the patterning process is composed of a plurality of processes such as application of the photosensitive agent to the material to be exposed, baking, pattern exposure, development and etching, it takes a certain amount of production time and production cost. Is also easy to increase. It is also desired to reduce the load of neutralizing the used etching solution.

Therefore, it is an object of the present invention to provide an exposure apparatus capable of exposing a predetermined pattern in a shorter time.

Another object of the present invention is to provide an exposure apparatus capable of directly forming a predetermined pattern in a shorter time.

[0010]

In order to achieve the above object, an exposure apparatus of the present invention comprises an exposure material, a light source for generating exposure light, and an optical for guiding the exposure light to the exposure material along an optical path. System, a positioning means for performing relative positioning between the optical system and the material to be exposed, and a selective reflection part provided in the middle of the optical path and having a plurality of reflection elements each capable of changing a reflection state. And a control unit that controls the reflection state of each of the plurality of reflection elements corresponding to the exposure pattern data.

With such a structure, it is possible to perform pattern exposure over a wide range with one exposure.

[0012] Preferably, the selective reflection section is a multi-mirror device capable of selectively driving a plurality of mirrors. As a result, it is possible to configure the selective reflection unit that has a high reflection efficiency and obtains a high-contrast exposure pattern.

Preferably, the optical system guides the exposure light to the selective reflection part, and guides the exposure light reflected by the reflective element to the exposed material. This makes it possible to reduce the loss of exposure light.

Preferably, the optical system includes a half mirror that guides the exposure light to the selective reflection section. As a result, the arrangement of parts can be facilitated and the device can be downsized.

Preferably, the selective reflection section is a liquid crystal display panel in which the transmittance or reflectance of a plurality of pixels can be selectively set. As a result, the selective reflection section can be constructed at a relatively low cost.

Preferably, a plurality of the selective reflection units are provided. Thereby, it is possible to increase the production efficiency by increasing the area exposed at the same time.

Preferably, the reflection control section can set the intensity of the reflected light at each reflection element. This enables free pattern formation.

Preferably, the plurality of mirrors are two-dimensionally arranged in a matrix, and the control means controls the tilt of each mirror.

Preferably, the control means enables fine adjustment of the inclination of each mirror.

With this structure, it is possible to form an exposure pattern corresponding to the control of each mirror.

[0021] Preferably, the exposure light is instantaneous light emission.

With such a structure, it is possible to omit the shutter mechanism for interrupting the exposure light.

Preferably, the irradiation time per irradiation of the light source is 1/4 or less of the value obtained by dividing the minimum line width of the pattern by the magnitude of the relative speed between the optical system and the exposed material during exposure. And

With this structure, when the pattern is formed on the exposed material with the minimum line width, it is possible to avoid the influence on the electrical performance of the wiring pattern due to the change in the width of the pattern width.

Preferably, the light source is a solid-state laser. Solid-state lasers such as YAG have the advantages that pulsed light emission is possible, they have a longer life than gas lasers, and they are easy to maintain (replacement of components at the time of failure, adjustment of laser beam, etc.).

Preferably, the exposed surface of the exposure material is formed of a conductor, and the light source is laser light in either the infrared region or the ultraviolet region. The surface of the exposed material is finely processed by laser ablation to form wiring patterns, holes, etc. in the exposed material.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is an explanatory view for explaining the first embodiment of the present invention. The exposure apparatus 1 is roughly classified into an XY stage 10, an optical system 20, a multi-mirror section 30, an exposure control apparatus 50 and the like. Composed. In the figure, the optical system 2
0 and the multi-mirror unit 30 are simplified for convenience of explanation and are drawn relatively larger than the others.

The XY stage 10 mounts the material to be exposed (or the substrate to be exposed) 40 and moves it in the X and Y directions shown in the figure, and moves the material 40 to be exposed relative to the optical system 20. Thus, the entire surface of the exposed material 40 can be exposed. The XY stage 10 has a table-shaped X stage 11, a guide rail 13 for guiding the movement of the X stage 11 in the X direction, an X axis motor 12 for reciprocating the X stage 11 in the X direction, and an exposed material 40. Y stage 15, guide rail 16 for guiding the movement of Y stage 15 in the Y direction, and Y for reciprocating Y stage 15 in the Y direction
The shaft motor 17 and the like are used.

The optical system 20 forms an exposure pattern on the material 40 to be exposed, and includes a semiconductor laser device 21,
An integrator 22, a lens 23 that guides the exposure light to the multi-mirror device 30, an imaging lens (reduction lens) 24 that guides the reflected light from the multi-mirror device 30 to the exposed material 40, and the like. The semiconductor laser device 21, which is an exposure light source, can emit pulsed light and emits the generated exposure light toward the integrator 22. The integrator 22 converts the exposure light into a light beam having a uniform light intensity,
Lead to 3. The lens 23 transmits the exposure light to the multi-mirror device 30.
Irradiate the whole.

The multi-mirror device 30 has a group of minute mirrors arranged in a matrix. Each micro mirror is rotatably supported, and each micro mirror is provided with a drive means for swinging the micro mirror. As the driving means, for example, a piezoelectric element is used, which expands and contracts according to the applied voltage to control the tilt angle of the swing mirror. Therefore, it is possible to individually set the tilt angle of each of the plurality of mirrors arranged in a matrix. As will be described later, the control of each mirror is controlled according to the exposure pattern data in a matrix at a predetermined position on the exposure material. As the multi-mirror device 30, for example, a device having 1280 × 720 pixels provided by Texas Instruments Incorporated.

The exposure light incident on the multi-mirror device 30 is reflected by the micromirror group. At this time, the direction of the reflected light differs depending on the tilt angle set for each micro mirror. The reflected light A from the minute mirror set at an appropriate angle (first tilt angle) is guided to the imaging lens 24. The reflected light B from the micro mirror set at another appropriate angle (second tilt angle) does not enter the imaging lens 24, but is guided to a light absorbing section (not shown) and disappears. It should be noted that if the mirror inclination is set so that the area of the micro mirrors of the multi-mirror device 30 looks large when viewed from the imaging lens 24 side (or the exposed material 40 side), the light utilization rate increases.

The exposure light becomes a light pattern by the multi-mirror device 30 and enters the imaging lens 24. The imaging lens 24 forms an exposure light pattern of a required size on the exposed material 40. As the image forming lens 24, a reducing lens, a magnifying lens, a reducing and magnifying lens, or a unit magnification lens can be appropriately used. Therefore, various patterns are formed by controlling the matrix of the micro mirrors of the multi-mirror device 30. , Which is to be a photomask, has a light-shielding film formed on a transparent substrate, and a photosensitizer is applied thereon. Preferably, the photosensitizing property of the photosensitizer is such that
The one corresponding to the light wavelength of is selected.

Although not shown, the XY stage 1
If necessary, an exposure axis rotating means for rotating the exposure pattern by relatively rotating 0 and the optical system 20 is provided.

The exposure controller 50 controls the movement of the XY stage 10 and the pattern control of the multi-mirror device 30. The exposure control device 50 is composed of a computer system, which makes a pattern to be drawn on the exposed material 40 into a fine region and holds it in a database (not shown).

Next, the exposure operation by the exposure controller 50
Will be described with reference to FIG. In the figure, the dot part
Minutes represent non-exposed areas and blank areas represent exposed areas. Dew
The light control device 50 pre-defines a pattern for exposing the mask.
Database. For example, as shown in FIG.
The area where the mask pattern to be exposed is exposed at one time (hereinafter, "1
This is called the “exposure area”. ) And divide each area into a matrix
Position information (x, y) is added to the area. Single exposure area X
X indicated by an arrow in FIG. 5 depending on the direction dimension and the Y direction dimension.
The amount of movement of the Y stage is determined. In the example shown in the figure,
Single exposure area (x _i, Y_i) Is compatible with 5x5 mirrors
However, for convenience of explanation, it is limited to this
Not done. For example, the multi-mirror device 30 has 1280
X720 pixels are available, but more than that
May be used, and instead of using all pixels,
Pattern formation only on a part (for example, the central part) of the mirror group
It is also good to use for.

The exposure control device 50 grasps the position of the XY stage 10 by a position sensor such as a linear gauge (not shown), controls the X-axis motor 12 and the Y-axis motor 17 to move the XY stage 10 precisely, and controls the position of the XY stage 10. The exposure material 40 is set at the initial exposure position. This position is set as a single exposure area (x ₀ , y ₀ ), and the setting pattern of this area is read from the database to operate the driving means of each micro mirror of the multi-mirror device 30. Then, pulsed light emission is performed from the semiconductor laser device 21 as a light source to perform pattern exposure of the exposure area once. Next, the XY stage 10 is moved in the Y direction by one area to make a single exposure area (x ₀ , y ₁ ).
Move to exactly. The pattern for this area is read from the database, the set pattern is read from the database, and the driving means of each micromirror of the multi-mirror device 30 is operated, and the semiconductor laser device 21 emits pulsed light to generate the region (x ₀ , y _1). ) Pattern exposure. By repeating such an exposure operation, the material 40 to be exposed is precisely scanned and a required mask pattern is irradiated. Depending on the mask pattern to be formed, the exposed material 40
Since it is not necessary to expose the entire surface of the substrate, the regions to be exposed next are correlated with each other in advance so that only the region requiring the exposure is controlled and traced by the XY stage.
It is possible to shorten the exposure time by not exposing the unnecessary area.

It is also possible to use a method in which the XY stage is not stopped but is moved and exposure is performed each time a predetermined position (x _i , y _i ) is reached.

Further, in the present embodiment, the reflected light A from the multi-mirror device 30 reaches the exposed material 40 directly through the imaging lens 24 without using a half mirror, so that it is compared with the case where a half mirror is used. And there is an advantage that there is little loss of light.

By the way, when exposure is carried out while the optical system 20 and the material 40 to be exposed are relatively moved, the exposure range tends to be enlarged.

That is, as shown in FIG. 11, when the light emission time of the exposure light source 21 is relatively longer than the movement amount of the XY stage 10, the exposure range on the material 40 to be exposed is at the exposure start time and the exposure end time. In and, since the exposure range by the unit mirror is moved, the entire exposed range is increased. If this increase is large, the electrical characteristics such as the resistance value of the wiring pattern are also affected. For example, a wiring pattern such as a printed circuit board having a line width of about 20 μm is used, but if the wiring pattern increases or decreases by about 25%, a problem may occur in the electrical characteristics of the wiring pattern. understood.

Therefore, when the exposure process is performed in such a mode of exposing while moving, the exposure width increased by the movement of the exposed material 40 during the light emission time of the light source does not exceed the allowable increase width. Is desirable. That is,
It was found that the light emission time of the exposure light source should be selected so that 0 <pulse-shaped light emission time of the light source [second] ≦ 0.25 × minimum pattern line width [mm] / relative moving speed [mm / second] . For example, the moving speed of the XY table, which is a moving means, is 500 [mm / sec], which is a speed capable of maintaining the performance such as straightness and yawing, and the pattern minimum line width is 0.02.
In the case of [mm], 0.25 × 0.02 / 500 =
It has been found that a wiring pattern with high accuracy and high reliability can be obtained by using a light source that emits 0.00001 or less and emits a pulse of 10 μS or less.

As such a pulsed laser light source 21, a solid-state laser capable of emitting a pulsed light, having a long life, replacing parts at the time of failure, and easily adjusting a laser beam is preferable as the YAG laser.

It is to be noted that the reason why the light emission time is determined as described above is the same in all the embodiments described below as long as the exposure is performed while the optical system and the material to be exposed are relatively moved. And can be combined with these embodiments.

Further, instead of the pulse laser, a combination of another light source and a shutter or the like may be used to similarly determine the exposure time by the opening / closing time of the shutter.

FIG. 2 is an explanatory view for explaining the second embodiment of the present invention. In the figure, parts corresponding to those in FIG.
The same reference numerals are given and the description of such portions is omitted.

In the second embodiment, the half mirror 25 is arranged in the optical path. The exposure light from the exposure light source 21 passes through the integrator 22 and the lens 23, is reflected by the half mirror 25, and enters the multi-mirror device 30. As described above, each micro mirror of the multi-mirror device 30 has an inclination corresponding to the presence or absence of each pixel of the mask pattern, and the reflected light A reflected by the micro mirror of the first inclination angle
Passes through the half mirror 25, enters the imaging lens 24, and forms an image on the exposed material 40. The reflected light B reflected by the minute mirror having the second tilt angle does not pass through the half mirror 25 and does not enter the imaging lens 24. Therefore, by operating in the same manner as in the first embodiment, it becomes possible to irradiate the exposed material 40 with the mask pattern.

In this embodiment, the use of the half mirror 25 reduces the exposure light amount to, for example, 1/4 of that in the first embodiment. However, by using the half mirror 25, the imaging lens 24 is used. It is possible to set the optical axis of the exposure light source at a right angle to the optical axis of.
This has the advantage of facilitating component placement within the device. Further, there are advantages such as making the shape of the exposure spot by the micro mirror more uniform.

FIG. 3 is an explanatory view for explaining the third embodiment of the present invention. In the figure, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and description of such parts will be omitted.

In this example, the optical system uses a bundle of parallel rays. The parallel light beam emitted from the exposure light source 21a is reflected by the multi-mirror device 30. The exposure light source 21a includes the above-mentioned semiconductor laser device 21, integrator 22, and
It is composed of a lens 23 that guides the exposure light to the multi-mirror device 30. The inclination of each micro mirror of the multi-mirror device 30 is set according to the mask pattern to be exposed. For example, the exposure beam A reflected by a micro mirror that is flush with a substrate (not shown) of the multi-mirror device 30.
Irradiates the exposure material 40. In addition, the exposure beam B reflected by the minute mirror tilted with respect to the substrate is the light absorbing material portion 26.
Are absorbed by and become heat and disappear.

With such a configuration, light loss is small, light emission of low power can be used, and the life of the light source can be easily improved. It is explanatory drawing explaining an Example. In the figure, the parts corresponding to those in FIG.
A description of this part will be omitted.

In this example, the optical system uses a bundle of parallel rays and further uses a half mirror 25. Exposure light source 2
The parallel light flux emitted from 1a is reflected by the half mirror 25 and further reflected by the multi-mirror device 30. The inclination of each micro mirror of the multi-mirror device 30 is set according to the mask pattern to be exposed. For example, the exposure beam A reflected by the minute mirror that is flush with the substrate (not shown) of the multi-mirror device 30 passes through the half mirror 25 and irradiates the exposure material 40. In addition, the exposure beam B reflected by the minute mirror tilted with respect to the substrate is the light absorbing material portion 26.
Is absorbed by and disappears.

FIG. 7 is an explanatory view for explaining the fifth embodiment of the present invention. In the figure, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and description of such parts will be omitted.

In this example, the optical system 20 uses a bundle of parallel rays. Further, the deflecting beam splitters 61, 1/4
The wave plate 62 and the liquid crystal display panel 63 are used. The exposure light source 21a, the optical system 20, the liquid crystal display panel 63, and the like constitute the pattern forming unit 101. The bundle of parallel rays emitted from the exposure light source 21a includes a longitudinal wave component (P wave) that vibrates up and down with respect to the propagation direction and a transverse wave component (S wave) that vibrates left and right with respect to the propagation direction. . This bundle of parallel rays enters the deflecting beam splitter 61. The deflecting beam splitter 61 transmits the longitudinal wave component and reflects the transverse wave component. However, it is also possible to transmit the transverse wave component and reflect the longitudinal wave component. The transverse wave component reflected upward by the deflecting beam splitter 61 is incident on the liquid crystal display panel 63 through the quarter-wave plate 62 that rotates the polarization plane of the passing light by 45 degrees. The liquid crystal display panel 63 is a reflection type liquid crystal panel, and the transmittance of the liquid crystal portion of each pixel of the pixel matrix by the exposure control device 50 corresponds to the pattern to be drawn (for example, the “single exposure region” of the mask pattern). Is modulated. The light flux that has entered the pixel matrix is reflected by a reflection film (not shown) and emitted from the liquid crystal display panel 63. The outgoing light beam bundle undergoes pattern modulation according to the transmittance of each pixel and passes through the quarter wavelength plate 62 again. As a result, the polarization plane of the exposure light is further rotated by 45 degrees and becomes a longitudinal wave, which is incident on the deflection beam splitter 61. The deflecting beam splitter 61 allows longitudinal waves to pass. The pattern-modulated exposure light of the longitudinal wave component enters the projection lens 64 through the deflection beam splitter 61 and forms an exposure pattern on the material to be exposed 40. In the embodiment, the projection lens 64 that projects the exposure pattern is a reduction lens, but is not limited to this.

A photoresist, which is a photosensitizer, is applied to the substrate 40, and is placed on the XY table 10 (see FIG. 1). The exposure control device 50 performs pattern exposure in synchronization with the movement of the substrate 40, as described with reference to FIG. 5 in the description of the first embodiment. The exposed substrate is developed in the developing process, and the resist corresponding to the exposure pattern remains.

FIG. 8 is an explanatory view for explaining the sixth embodiment. In this example, the pattern forming unit 201 using the multi-mirror device 30 or the liquid crystal display panel 63 described above.
A plurality of substrates are arranged to expose the substrate 40. By carrying out pattern exposure at a plurality of locations at the same time, there is an advantage that a large-sized substrate 40 can be exposed in a short time. Other configurations are similar to those of the first to fifth embodiments.

FIG. 9 is an explanatory diagram for explaining the seventh embodiment. In the figure, the parts corresponding to those in FIG. 7 are designated by the corresponding reference numerals, and the description of such parts will be omitted. In this example,
The pattern forming unit 101 is replaced with a plurality of pattern forming units 101a.
And 101b are arranged and one light source 21a is shared by each optical system.

That is, the bundle of parallel rays emitted from the exposure light source 21a includes a longitudinal wave component (P wave) and a transverse wave component (S wave), and is incident on the deflection beam splitter 61a.
The deflecting beam splitter 61a reflects the transverse wave component of the incident light and transmits the longitudinal wave component. As described above, the transverse wave component is the exposure light flux of the first pattern forming portion 101a.

The longitudinal wave component of the parallel light flux transmitted through the deflecting beam splitter 61a is the second pattern forming section 10.
It becomes the light source of 1b. The longitudinal wave component is the pattern forming unit 1.
It is incident on the deflecting beam splitter 61b of 01b. The deflection beam splitter 61b reflects the longitudinal wave component of the exposure light and transmits the transverse wave component. Therefore, the quarter wave plate 62
b, the liquid crystal display panel 63b, and the quarter-wave plate 62b, the pattern-modulated exposure light beam becomes a transverse wave, passes through the deflection beam splitter 61b, and enters the projection lens 64b. The projection lens 64b projects the exposure pattern on the substrate 40. Although the projection lens 64b is a reduction lens in the embodiment, it is not limited to this.

In this example, liquid crystal display panels 63a and 6a
3b is used, but the configuration is such that the multi-mirror type pattern forming unit using a half mirror as shown in FIG. 2 is arranged and the exposure light transmitted through the half mirror of the preceding pattern forming unit is used as the light source of the pattern forming unit of the next stage. But good. The difference in the light amount of the exposure light source between the pattern forming portions causes the ND to attenuate the light amount.
It can be adjusted by appropriately interposing a filter or the like.

In this way, the exposure light source 21a can be shared in the structure in which a plurality of pattern forming portions are arranged.

FIG. 10 shows an eighth embodiment of the present invention. In this embodiment, the resolution of the exposure apparatus 1 is further increased.

FIG. 10A shows the resolution when an exposure pattern is obtained by turning on and off the pixels of the multi-mirror device 30 and the liquid crystal display panel 63. The intensity of the exposure light that is pattern-modulated by the pixels of the multi-mirror device 30 or the liquid crystal display panel 63 shows a sharp rising characteristic at the ON / OFF switching portion of the pixel. The resolution of the exposure device 1 that exposes the above-described mask pattern by pattern modulation is basically determined by the size of each pixel of the multi-mirror device 30 and the liquid crystal display panel 63.

Therefore, in the eighth embodiment, as shown in FIG.
As shown in (b), by enabling exposure of the intermediate gradation in the contour portion of the pattern, the exposure intensity characteristic is gently raised in the contour portion of the pattern, and the threshold light amount (resist sensitivity) with which the resist reacts is increased. The outline portion of the pattern to be developed is finely adjusted. That is, by using the intermediate gradation, the width of the resist after development can be finely adjusted within a range narrower than the resolution by the unit pixel.

Such a halftone pixel can be obtained by adjusting the voltage applied to the pixel electrode (liquid crystal) of the liquid crystal display panel 63. The degree of twist of the liquid crystal of the pixel is set by the voltage applied to the pixel electrode, and the transmittance of the exposure light changes. Further, in the case of the multi-mirror device 30, the amount of reflected light can be adjusted by controlling the oscillation frequency applied to each pixel mirror.

The eighth embodiment can be applied to each of the first to seventh embodiments described above.

FIG. 12 shows the essential parts of the ninth embodiment. The overall structure of the apparatus is substantially the same as that of the embodiment shown in FIG.
The different parts will be described below. In this example, the surface of the exposed material 40 is not coated with a photosensitizer, and the exposed material 40 is composed of an insulating substrate 40a and a conductor 40b formed on the surface of the insulating substrate 40a. Conductor 40b
Is, for example, a thin film of gold, aluminum, copper or the like. These conductive films on the surface of the exposed material 40 are directly subjected to fine processing by a laser to form wiring patterns, holes and the like. An intake manifold 121 is provided near the objective lens 24, and an infrared laser (YAG
Etc.) or laser ablation (evaporation removal processing) with a laser in the ultraviolet range (excimer laser, etc.)
The residue and gas decomposed by are sucked so as not to scatter around. The inhaled residue and gas are discharged to the outside and processed.

In this embodiment, since the patterning is directly performed by the laser, a plurality of steps from coating the photosensitive material to etching are unnecessary. Since the number of steps required for patterning is small and the time required for patterning is also short, the delivery time of the product is shortened, and equipment for other steps is not required, which is low cost. Further, since no etching liquid is used, the processing load is small, which is preferable.

In this embodiment, the above-mentioned second to eighth embodiments are used.
You may combine with the structure of each Example.

FIG. 13 is an explanatory view for explaining the tenth embodiment of the present invention. FIG. 3A is a perspective view of the exposure apparatus, and FIG. 2B is a sectional view for explaining the rotation mechanism of the θ stage. In both figures, the portions corresponding to those in FIG. 1 are designated by the same reference numerals, and the description of those portions will be omitted.

In this embodiment, the exposure material is conveyed by XYθ.
It is composed of the stage 10. XYθ stage 1
0 indicates an X stage 11 and an X stage 1 that move in the X direction.
The Y stage 15 is mounted on the No. 1 and moves in the Y direction. Further, the Y stage 15 is mounted on the Y stage 15 and is rotated about the Z axis (vertical) at the center position of the Y stage 15. The material 40 to be exposed is placed on the θ stage 102, moved in the illustrated X and Y directions, and can be further rotated or tilted about the Z axis.

As shown in FIG. 13B, the θ stage 1
02 is rotatably supported at the center of the Y stage 15 via a bearing. Set the arm 102a of the θ stage 102 to Y
The θ stage 102 is rotated in the forward and reverse directions by being driven by the θ axis motor 103 fixed to the stage 15.

The X stage 11 and the Y stage 15 include
As shown in FIG. 14, an X position sensor 12a and a Y position sensor 17a such as a linear gauge or a potentiometer are used.
Are arranged respectively. In addition, the θ stage has a θ such as a potentiometer that detects the rotation angle of the stage.
The angle sensor 130a is arranged. The outputs of these position sensors are sent to the control unit 500, and the position of each stage and the XYθ stage 10 are controlled by the microcomputer.
The exposure position P _S (X _S , Y _S , θ _S ) of is determined.

Above the X direction both ends of the θ stage 102, a CCD camera 101a as a mark position detector,
101b are arranged respectively, and the image read by these is sent to the control part 500. θ stage 102
Two alignment marks (reference marks) 100a, 100 are provided on both sides of the exposed material 40 placed on the substrate in the X direction.
b is provided. The control unit 500 detects the alignment mark by the pattern recognition processing of the read image. Difference between the detected position and the center position of the camera field of view Δ
Based on information such as X, ΔY, and inclination error Δθ of the detection mark, the X stage 11, the Y stage 15, and the θ stage 15 so that the alignment marks 100a and 100b are located at the center positions of the fields of view of the CCD cameras 101a and 101b, respectively.
The position of the stage 102 is adjusted, and the exposure position of the exposed material 40 is adjusted (positioning of the optical system 20 and the exposed material 40). The required number of alignment marks and mark position detectors can be provided.

When the alignment of the material 40 to be exposed is completed, the controller 50 controls the X-axis motor 12, based on the pattern data to be drawn stored in the storage device 510 in advance.
The Y-axis motor 17 is appropriately driven to cause the optical system 20 to relatively scan the exposed material 40. Then, each time the exposure area is moved, a drive signal group corresponding to the ON / OFF pattern of each unit mirror is sent to the multi-mirror drive circuit 300 to drive the multi-mirror device 30 and drive the laser drive circuit 210. Supply a signal. Thereby, the light source 2
The exposure target substrate 40 is exposed by generating laser light from 1 for a short time. This is repeated so that a desired exposure pattern can be obtained.

The above-described configuration example in which the alignment adjustment can be performed using the XYθ stage in the example shown in FIG. 1 is also applicable to the example using the XY stage in the embodiment shown in FIG. .

As described above, according to the embodiment of the present invention, the multi-mirror device 30 and the liquid crystal display panel 63 are used to
Since the exposure material is irradiated with the reflected light that is surface-modulated corresponding to the pattern to be exposed, the exposure area per exposure is large. Further, it is possible to expose a complicated pattern once. As a result, the number of exposures can be reduced, and the exposure time in the exposure process can be shortened.

Further, since the exposure pattern in the single exposure is formed by setting the tilt amount of each mirror of the multi-mirror device 30 and the transmittance setting of each pixel of the liquid crystal display panel,
The pattern setting is extremely short compared to the conventional variable aperture. Moreover, since a mechanism operating part such as a variable aperture is not necessary, it is possible to improve reliability.

Although the material to be exposed 40 is moved using the XY stage 10 in each of the above-described embodiments, the optical system 20 may be moved to position the exposure.
Alternatively, the movement in the X direction or the Y direction may be performed by the movement on the exposed material 40 side, and the movement in the Y direction or the X direction may be performed by the movement on the optical system 20 side.

As described above, as the image forming lens, it is possible to use a reduction lens, a unit magnification lens, a magnifying lens, or the like.

The exposure light source 21 is not limited to the semiconductor laser device, but a YAG laser, a xenon flash lamp, or the like may be used. Short exposure may be performed by combining an exposure light source and a shutter.

Further, it is possible to finely adjust the posture of the entire multi-mirror device 30. Further, at each exposure position, it is also possible to separately finely adjust the tilt of each micro mirror by adding a separate fine adjustment applied voltage to each micro mirror.
This makes it possible to form a more precise pattern. Each of the above-mentioned micro mirrors may have an appropriate size, and need not necessarily be micro.

Further, the shape of the exposure light may be finely adjusted by finely adjusting the attitude of the imaging lens.

By disposing a plurality of pattern forming portions, the exposure time can be further shortened.

Further, when a plurality of pattern forming portions are arranged, it is possible to save the number of exposure light sources that are used by sharing the exposure light source.

In an exposure apparatus using a liquid crystal display panel, a reflection type liquid crystal display panel is used to shorten the optical path length,
Although the exposure apparatus is miniaturized, a transmissive liquid crystal display panel may be used.

[0087]

As described above, in the exposure apparatus of the present invention, each pixel (reflection element) arranged two-dimensionally modulates the exposure light flux so that a complicated pattern can be drawn by one exposure. It is possible to reduce the drawing time. Further, since the variable aperture is unnecessary, high reliability can be obtained.

Further, it is preferable to use a laser because patterning can be performed without using an etching solution.

[Brief description of drawings]

FIG. 1 is an explanatory diagram illustrating a first embodiment of the present invention.

FIG. 2 is an explanatory diagram illustrating a second embodiment of the present invention.

FIG. 3 is an explanatory diagram illustrating a third embodiment of the present invention.

FIG. 4 is an explanatory diagram illustrating a fourth embodiment of the present invention.

FIG. 5 is an explanatory diagram for explaining the operation of the embodiment of the present invention.

FIG. 6 is an explanatory diagram illustrating an operation of a conventional example.

FIG. 7 is an explanatory diagram illustrating a fifth embodiment of the present invention.

FIG. 8 is an explanatory diagram illustrating a sixth embodiment of the present invention.

FIG. 9 is an explanatory diagram illustrating a seventh embodiment of the present invention.

FIG. 10 is an explanatory diagram illustrating an eighth embodiment.

FIG. 11 is an explanatory diagram illustrating an example in which the exposure range is increased by the exposure while feeding the material.

FIG. 12 is an explanatory diagram for explaining thermal processing and ablation by laser.

FIG. 13 is an explanatory diagram illustrating an example of transporting a material to be exposed by an XYθ stage.

14 is a block diagram illustrating a configuration example of a control system of the example illustrated in FIG.

[Explanation of symbols]

10 Conveyance System for Exposed Material (XY Stage, XYθ Stage) 20 Optical System 30 Multi-Mirror Device 40 Exposed Material (Substrate) 62 Deflection Beam Splitters 63, 63a, 63b Liquid Crystal Display Panel

Claims (10)

[Claims] 1. A material to be exposed, a light source that generates exposure light, an optical system that guides the exposure light to the material to be exposed along an optical path, and a relative system between the optical system and the material to be exposed. Positioning means for performing positioning, a selective reflection part provided in the middle of the optical path and having a plurality of reflective elements each capable of changing a reflection state, and each of the plurality of reflective elements corresponding to exposure pattern data. An exposure apparatus comprising: a control unit that controls the reflection state of the. 2. The exposure apparatus according to claim 1, wherein the selective reflection unit is a multi-mirror device capable of selectively driving a plurality of mirrors. 3. The exposure apparatus according to claim 1, wherein the optical system guides the exposure light to the selective reflection section and guides the exposure light reflected by the reflective element to the material to be exposed. 4. The exposure apparatus according to claim 1, wherein the optical system includes a half mirror that guides the exposure light to the selective reflection section. 5. The selective reflection section is a liquid crystal display panel capable of selectively setting transmittance or reflectance of a plurality of pixels.
The exposure apparatus according to claim 1. 6. The exposure apparatus according to claim 1, further comprising a plurality of the selective reflection units. 7. The exposure apparatus according to claim 1, wherein the reflection control section can set the intensity of the reflected light at each reflection element. 8. The irradiation time per irradiation of the light source is set to 1/4 or less of a value obtained by dividing the minimum pattern line width by the magnitude of the relative speed between the optical system and the exposed material during exposure. The exposure apparatus according to any one of claims 1 to 7. 9. The exposure apparatus according to claim 1, wherein the light source is a solid-state laser. 10. The exposure apparatus according to claim 1, wherein the exposure surface of the exposure material is formed of a conductor, and the light source is laser light in either the infrared region or the ultraviolet region.